CN103422058B - A kind of boron-doping Si-rich silicon oxide film and its preparation method and application - Google Patents
A kind of boron-doping Si-rich silicon oxide film and its preparation method and application Download PDFInfo
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Abstract
本发明公开了一种掺硼富硅氧化硅薄膜及其制备方法和应用，采用共溅射制备掺硼富硅氧化硅薄膜，并通过之后的高温热处理在氧化硅薄膜内生成掺硼的硅纳米晶。由于掺硼硅纳米晶的形成，薄膜的导电性增强；由于硼还处于氧化硅基体中及硅纳米晶和氧化硅基体界面处，引入了发光中心，增强了薄膜的光致发光，并使其可以宽光谱白光发光。发明制备工艺简单，工业兼容性好，在硅基集成光源或半导体发光，太阳能电池，非线性光学等领域具有广阔的应用前景。
The invention discloses a boron-doped silicon-rich silicon oxide film and its preparation method and application. The boron-doped silicon-rich silicon oxide film is prepared by co-sputtering, and boron-doped silicon nanoparticles are formed in the silicon oxide film through subsequent high-temperature heat treatment. crystal. Due to the formation of boron-doped silicon nanocrystals, the conductivity of the film is enhanced; since boron is still in the silicon oxide matrix and at the interface between the silicon nanocrystals and the silicon oxide matrix, the luminescent center is introduced, which enhances the photoluminescence of the film and makes it Can emit broad-spectrum white light. The invention has simple preparation process and good industrial compatibility, and has broad application prospects in the fields of silicon-based integrated light sources or semiconductor light emitting, solar cells, nonlinear optics and the like.
Description
技术领域technical field
本发明涉及硅基光电子领域，具体涉及一种掺硼富硅氧化硅薄膜及其制备方法和应用。The invention relates to the field of silicon-based optoelectronics, in particular to a boron-doped silicon-rich silicon oxide film and a preparation method and application thereof.
背景技术Background technique
纳米晶硅由于具有量子限域效应，能增强硅的室温发光效率，而且具有与现有半导体器件工艺兼容的优点，被认为是制备硅基光电器件的理想材料。Nanocrystalline silicon is considered to be an ideal material for preparing silicon-based optoelectronic devices due to its quantum confinement effect, which can enhance the room temperature luminous efficiency of silicon, and has the advantages of being compatible with existing semiconductor device processes.
近年来，纳米晶硅材料由于其发光受到了广泛关注，有望在生物、照明及太阳电池等领域取得应用。但是纳米晶硅的发光强度较弱，发光波段通常与其尺寸分布相关，无法得到宽光谱的强的白光发光；而且，由于通常制备得到的纳米硅材料都是本征半导体颗粒，其电学、光学等特性在相关应用中存在不足；特别是在电致发光方面，由于本征半导体纳米晶硅导电性差，需要的开启电压较高，从而限制了其应用。In recent years, nanocrystalline silicon materials have received widespread attention due to their luminescence, and are expected to be applied in the fields of biology, lighting and solar cells. However, the luminescence intensity of nanocrystalline silicon is weak, and the luminescence band is usually related to its size distribution, so it is impossible to obtain strong white light emission with a broad spectrum; The characteristics are insufficient in related applications; especially in electroluminescence, due to the poor conductivity of intrinsic semiconductor nanocrystalline silicon, the required high turn-on voltage limits its application.
马丁.格林小组在室温下，通过磁控共溅射硅(Si)靶，石英(SiO2)靶，硼(B)靶，背底真空6.67×10-5Pa，引入高纯氩气(Ar)至工作气压为0.2Pa，研究了掺硼量及富硅量对掺硼的富硅氧化硅薄膜的发光性能的影响（Synthesis and characterization of boron-doped Si quantum dots for all-Siquantum dot tandem solar cells；X.J.Hao,E-C.Cho,C.Flynn,Y.S.Shen,S.C.Park,G.Conibeer,M.A.Green；Solar Energy Materials & Solar Cells；93(2009)273–279）：A组实验为调节不同Si/O比率的掺硼的富硅氧化硅薄膜。固定加在SiO2靶上的射频功率为120W，加在B靶上的功率为30W，变化加在Si靶上的功率来调节Si/O比率；B组实验为相同Si/O比率但不同含B量的富硅氧化硅薄膜，固定加在SiO2靶上的功率为120W，加在Si靶上的功率为25W，变化加在B靶上的功率：0，9，15，30W。经过高温热处理后得到的薄膜在532纳米激光激发下，只得到了Si纳米晶相关的激子发光峰（近红外发光)随掺硼量的增加而淬灭的现象，不能得到宽光谱的强的白光发光。At room temperature, Martin Green's group introduced high - purity argon (Ar ) to a working pressure of 0.2Pa, the effects of boron-doped Si quantum dots for all-Siquantum dot tandem solar cells on the luminescent properties of boron-doped Si quantum dots for all-Siquantum dot tandem solar cells were studied. ; XJHao, EC.Cho, C.Flynn, YSShen, SCPark, G.Conibeer, MAGreen; Solar Energy Materials & Solar Cells; 93(2009) 273–279): Group A experiment is to adjust boron-doped silicon-rich silicon oxide films. The RF power applied to the SiO 2 target was fixed at 120W, and the power applied to the B target was 30W, and the Si/O ratio was adjusted by changing the power applied to the Si target; group B experiments had the same Si/O ratio but different content B amount of silicon-rich silicon oxide film, the fixed power applied to the SiO 2 target is 120W, the power applied to the Si target is 25W, and the power applied to the B target is varied: 0, 9, 15, 30W. The film obtained after high temperature heat treatment is excited by a 532nm laser, only the exciton luminescence peak (near-infrared luminescence) related to the Si nanocrystal is quenched with the increase of the boron doping amount, and the strong white light with a broad spectrum cannot be obtained. glow.
发明内容Contents of the invention
针对现有技术中纳米晶硅在光致发光应用中存在的不足，本发明提供一种掺硼富硅氧化硅薄膜的制备方法，该方法得到的掺硼富硅氧化硅薄膜具有很强的可调宽光谱白光发射，且发光效率较高，可应用于硅集成光源或半导体发光。Aiming at the shortcomings of nanocrystalline silicon in photoluminescence applications in the prior art, the present invention provides a method for preparing a boron-doped silicon-rich silicon oxide film. The boron-doped silicon-rich silicon oxide film obtained by the method has strong photoluminescence White light emission with wide-tuned spectrum and high luminous efficiency can be applied to silicon integrated light source or semiconductor luminescence.
一种掺硼富硅氧化硅薄膜的制备方法，包括如下步骤：A method for preparing a boron-doped silicon-rich silicon oxide film, comprising the steps of:
（1）将电阻率为ρ=0.01～500Ω.cm的硅片清洗后作为衬底，将衬底加热至50-500℃；(1) Clean the silicon wafer with resistivity ρ=0.01～500Ω.cm as the substrate, and heat the substrate to 50-500℃;
（2）在真空度为8×10-4～5×10-3Pa下，通入高纯Ar和高纯O2混合气体，利用射频溅射对硅靶和硼靶进行反应共溅射，在衬底上沉积薄膜；(2) Under the vacuum degree of 8×10 -4 ~ 5×10 -3 Pa, the mixed gas of high-purity Ar and high-purity O 2 is introduced, and the silicon target and the boron target are reactively co-sputtered by radio frequency sputtering, Depositing a thin film on a substrate;
（3）惰性气氛下，对步骤（2）得到的薄膜进行热处理，即得到掺硼富硅氧化硅薄膜。(3) Under an inert atmosphere, heat-treat the film obtained in step (2) to obtain a boron-doped silicon-rich silicon oxide film.
本发明采用共溅射制备掺硼富硅氧化硅薄膜，然后通过高温热处理在氧化硅薄膜内生成掺硼的硅纳米晶。由于硼掺杂进入硅纳米晶的同时，还位于氧化硅基体中和基体与硅纳米晶的界面处，引入了发光中心，富硅氧化硅掺硼薄膜在紫外光入射的条件下可呈现强的宽光谱白光发射，可作为发光材料。The invention adopts co-sputtering to prepare a boron-doped silicon-rich silicon oxide film, and then generates boron-doped silicon nanocrystals in the silicon oxide film through high-temperature heat treatment. Since boron is doped into the silicon nanocrystal, it is also located in the silicon oxide matrix and at the interface between the matrix and the silicon nanocrystal, introducing a luminescent center, and the boron-doped silicon-rich silicon oxide film can exhibit a strong emission under the incident ultraviolet light. Broad-spectrum white light emission can be used as a luminescent material.
磁控溅射过程中，高纯Ar作为工作气体，高纯O2作为反应气体，两者的比例需要保持在一定范围内，作为优选，步骤（2）中高纯Ar和高纯O2混合气体中高纯O2的质量百分含量为0.1%～1%。In the process of magnetron sputtering, high-purity Ar is used as the working gas, and high - purity O2 is used as the reaction gas. The mass percentage of medium and high-purity O 2 is 0.1% to 1%.
为保证制膜的纯度及掺硼富硅氧化硅薄膜的发光性能，作为优选，步骤（2）中硅靶和硼靶的纯度均大于或等于99%。In order to ensure the purity of the film and the luminescent performance of the boron-doped silicon-rich silicon oxide film, preferably, the purity of the silicon target and boron target in step (2) is greater than or equal to 99%.
本发明制备的富硅氧化硅掺硼薄膜中富硅量及掺硼量对最终得到的薄膜的发光性能有着直接影响，富硅量很高（Si/O原子比大于等于1）时，掺硼后薄膜无发光；富硅量低(Si/O原子比约为0.51～0.65)时，掺硼后薄膜有白光发光；中等富硅量（Si/O原子比约为0.66～0.99）时，掺硼后薄膜白光发光性能最优。而富硅量及掺硼量均通过共溅射时的溅射功率实现，因此作为优选，步骤（2）中共溅射时，硅靶的溅射功率为70～190W，硼靶的溅射功率为5～100W，溅射腔室的压强为1～5Pa。The amount of silicon-rich and boron doped in the silicon-rich silicon oxide boron-doped film prepared by the present invention has a direct impact on the luminescent performance of the final film. When the silicon-rich amount is very high (Si/O atomic ratio is greater than or equal to 1), after boron The thin film has no light emission; when the silicon-rich content is low (Si/O atomic ratio is about 0.51-0.65), the boron-doped film has white light emission; when the silicon-rich content is medium (Si/O atomic ratio is about 0.66-0.99), boron-doped The white light emission performance of the back film is the best. The silicon-rich amount and boron-doped amount are both achieved by the sputtering power during co-sputtering. Therefore, as a preference, during co-sputtering in step (2), the sputtering power of the silicon target is 70-190W, and the sputtering power of the boron target 5-100W, and the pressure of the sputtering chamber is 1-5Pa.
溅射镀膜后还需进行退火处理，促进硅纳米晶在基体中分相和激活发光中心。作为优选，步骤（3）中热处理的条件为：在600～1200℃下热处理0.5～3小时。After sputtering coating, annealing treatment is required to promote the phase separation of silicon nanocrystals in the matrix and activate the luminescence center. Preferably, the heat treatment condition in step (3) is: heat treatment at 600-1200° C. for 0.5-3 hours.
本发明还提供了所述的制备方法得到的掺硼富硅氧化硅薄膜。The invention also provides the boron-doped silicon-rich silicon oxide film obtained by the preparation method.
本发明还提供了所述的制备方法得到的掺硼富硅氧化硅薄膜在发光领域的应用，利用其宽光谱白光发光的性能，可将其应用于光致发光及电致发光。The invention also provides the application of the boron-doped silicon-rich silicon oxide thin film obtained by the preparation method in the field of light emission, which can be applied to photoluminescence and electroluminescence by utilizing its wide-spectrum white light emission performance.
本发明在传统的制备纳米晶硅镶嵌富硅氧化硅薄膜的基础上，利用共溅射沉积引入硼元素，从而在后续热处理中使得硼掺杂进入纳米晶硅，或位于氧化硅基体中，或位于氧化硅基体和Si纳米晶的界面处，使得纳米晶硅及纳米晶硅镶嵌富硅氧化硅薄膜的导电性增强的同时，增强了薄膜的光致发光强度，并使其可以宽光谱白光发光。整个生产工艺简单，技术成熟，具有一定的工业应用前景。On the basis of the traditional preparation of nanocrystalline silicon embedded silicon-rich silicon oxide film, the present invention uses co-sputtering deposition to introduce boron element, so that boron is doped into nanocrystalline silicon in the subsequent heat treatment, or located in the silicon oxide matrix, or Located at the interface between the silicon oxide matrix and Si nanocrystals, it enhances the conductivity of nanocrystalline silicon and nanocrystalline silicon-embedded silicon-rich silicon oxide films, and at the same time enhances the photoluminescence intensity of the film and enables it to emit white light with a wide spectrum . The whole production process is simple, the technology is mature, and has certain industrial application prospects.
附图说明Description of drawings
图1a为低富硅量下掺硼薄膜透射电镜图；Figure 1a is a transmission electron microscope image of a boron-doped thin film with low silicon-rich content;
图1b为中富硅量下掺硼薄膜透射电镜图；Figure 1b is a transmission electron microscope image of a boron-doped thin film with medium silicon-rich content;
图2为实施例1制得的不同硼含量的掺硼富硅氧化硅薄膜光致发光图；Fig. 2 is the boron-doped silicon-rich silicon oxide film photoluminescence figure of the different boron content that embodiment 1 makes;
图3为实施例1制得的不同硼含量的掺硼富硅氧化硅薄膜的发光照片；Fig. 3 is the photoluminescence photograph of the boron-doped silicon-rich silicon oxide thin film of the different boron content that embodiment 1 makes;
图4为实施例1制得的某固定富硅量固定掺硼量的掺硼富硅氧化硅薄膜的沉积态及经过不同温度热处理后的光致发光图；Fig. 4 is the deposition state of a boron-doped silicon-rich silicon oxide film with a fixed silicon-rich amount and a fixed boron-doped amount obtained in Example 1 and the photoluminescence diagram after heat treatment at different temperatures;
图5为相同掺硼量，不同富硅量的富硅氧化硅掺硼薄膜经过1100度热处理后的光致发光图。Fig. 5 is a photoluminescence diagram of boron-doped silicon-rich silicon oxide films with the same boron doping amount and different silicon-rich amounts after heat treatment at 1100 degrees.
具体实施方式detailed description
为了更好的理解本发明，下面结合实施例进一步阐述本发明的方案，但本发明的内容不仅仅局限于下面的实施例。In order to better understand the present invention, the solution of the present invention is further described below in conjunction with the examples, but the content of the present invention is not limited to the following examples.
实施例1：Example 1:
本实施例中，硼掺杂纳米晶硅镶嵌富硅氧化硅薄膜的制备采用（100）晶向的P型直拉单晶硅片，硅片单面抛光、电阻率ρ=10～20Ω.cm，溅射薄膜时衬底加热温度500度，射频溅射设备背底真空度为2×10-3Pa，溅射气体为含1%O2的高纯Ar+O2混合气体，硅靶功率80瓦，溅射压强4Pa，溅射时施加于硼靶上的功率分别为0、16、20、30、40和80瓦。In this example, the boron-doped nanocrystalline silicon inlaid silicon-rich silicon oxide film is prepared using a (100) oriented P-type Czochralski monocrystalline silicon wafer, which is polished on one side and has a resistivity ρ=10-20Ω.cm , the substrate heating temperature is 500℃ when sputtering thin films, the background vacuum degree of RF sputtering equipment is 2×10 -3 Pa, the sputtering gas is high-purity Ar+O 2 mixed gas containing 1% O 2 , the silicon target power 80 watts, sputtering pressure 4Pa, the power applied to the boron target during sputtering is 0, 16, 20, 30, 40 and 80 watts respectively.
具体制备方法如下；Concrete preparation method is as follows;
（1）对硅片进行标准的RCA清洗，然后用稀氢氟酸去除硅片表面的氧化层后，将硅片放入射频溅射设备，然后抽真空至真空度为2×10-3Pa，并同时将作为衬底的硅片加热至500度；在通入含O2的高纯Ar+O2混合气体、溅射压强4Pa条件下，利用高纯硅靶和高纯硼靶，在硅单晶衬底片上溅射沉积一层富硅氧化硅掺硼薄膜；并通过对施加于硼靶上的溅射功率的变化，改变薄膜中硼的掺入量；(1) Carry out standard RCA cleaning on the silicon wafer, and then remove the oxide layer on the surface of the silicon wafer with dilute hydrofluoric acid, put the silicon wafer into the radio frequency sputtering equipment, and then evacuate to a vacuum degree of 2×10 -3 Pa , and at the same time, heat the silicon wafer as the substrate to 500 degrees; under the conditions of high-purity Ar+O 2 mixed gas containing O 2 and sputtering pressure of 4Pa, using high-purity silicon targets and high-purity boron targets, the A layer of boron-doped silicon-rich silicon oxide film is deposited by sputtering on the silicon single crystal substrate; and the doping amount of boron in the film is changed by changing the sputtering power applied to the boron target;
（2）通过真空管式炉，在高纯惰性气氛保护下对前述反应共溅射制备的掺硼富硅氧化硅薄膜进行随炉加热，然后进行1100度高温保温1小时热处理，并随炉冷却，从而在薄膜中形成硼掺杂的纳米硅颗粒，该富硅量（低富硅量，Si/O原子比约为0.52）下不同掺硼含量的电镜图相似，如图1a所示。(2) Through a vacuum tube furnace, under the protection of a high-purity inert atmosphere, the boron-doped silicon-rich silicon oxide film prepared by the aforementioned reactive co-sputtering is heated with the furnace, and then heat-treated at a high temperature of 1100 degrees for 1 hour, and cooled with the furnace. Thus, boron-doped nano-silicon particles are formed in the film, and the electron microscope images of different boron-doped contents are similar under this silicon-rich amount (low silicon-rich amount, Si/O atomic ratio is about 0.52), as shown in Figure 1a.
为体现富硅量对薄膜的发光性能的影响，在其他条件不变的情况下，改变硅靶和硼靶的溅射功率，使硅靶的溅射功率为120瓦、硼靶的溅射功率为30瓦，然后在1100度热处理薄膜，得到如图1b所示的中等富硅量（Si/O原子比约为0.67）下掺硼薄膜的电镜图。In order to reflect the influence of the silicon-rich amount on the luminescent properties of the film, under the condition of other conditions unchanged, the sputtering power of the silicon target and the boron target was changed, so that the sputtering power of the silicon target was 120 watts, and the sputtering power of the boron target was 120 watts. The temperature is 30 watts, and then the film is heat-treated at 1100 degrees to obtain the electron microscope image of the boron-doped film with a medium silicon-rich amount (Si/O atomic ratio is about 0.67) as shown in Figure 1b.
如图5所示，其中曲线1为硅靶80瓦、硼靶30瓦、溅射1100度热处理得到的薄膜（低富硅量）的光致发光曲线，曲线2为硅靶120瓦、硼靶30瓦、溅射1100度热处理得到的薄膜（中等富硅量）的光致发光曲线，两者掺硼量相近，富硅量后者更高，从图中可见，中等富硅量的掺硼薄膜具有更好的白光发光性能。As shown in Figure 5, curve 1 is the photoluminescence curve of the thin film (low silicon-rich content) obtained by sputtering with 80 watts of silicon target, 30 watts of boron target and heat treatment at 1100 degrees, and curve 2 is the photoluminescence curve of 120 watts of silicon target and boron target The photoluminescence curve of the thin film (medium silicon-rich content) obtained by sputtering at 1100 degrees at 30 watts, the boron-doped content of the two is similar, and the silicon-rich content of the latter is higher. It can be seen from the figure that the medium silicon-rich boron-doped The thin film has better white light emitting performance.
在其他条件不变的情况下，改变硅靶和硼靶的溅射功率，使硅靶的溅射功率为200瓦、硼靶的溅射功率为40瓦，然后在1100度热处理薄膜，得到高富硅量（Si/O原子比约为1.1）的掺硼薄膜。对得到的薄膜进行发光性能的测试，测试结果表明几乎不发光。Under the condition that other conditions remain unchanged, change the sputtering power of the silicon target and the boron target, so that the sputtering power of the silicon target is 200 watts, and the sputtering power of the boron target is 40 watts, and then heat-treat the film at 1100 degrees to obtain a high-rich Boron-doped film with silicon content (Si/O atomic ratio about 1.1). The luminescent performance of the obtained film was tested, and the test results showed that there was almost no luminescence.
（3）将热处理后的薄膜在325nm紫外光激光照射下进行光致发光测试，如图2所示，其发射光范围在350-900nm，从图2可看出，经过硼掺杂的薄膜的发光峰位较未掺杂的薄膜发生了移动；且硼的掺杂量对薄膜的发光性能有很大影响，随着硼掺杂量的增大，薄膜的发光性能缓慢增强，当硼靶溅射功率增大到40W时，薄膜的发光性能有了显著增强，当硼靶溅射功率增大到80W时，发光强度已经下降到70%左右。(3) The heat-treated film was subjected to a photoluminescence test under 325nm ultraviolet laser irradiation. As shown in Figure 2, the emitted light range was 350-900nm. It can be seen from Figure 2 that the boron-doped film The luminescence peak shifted compared with that of the undoped film; and the doping amount of boron had a great influence on the luminescence performance of the film. With the increase of the boron doping amount, the luminescence performance of the film increased slowly. When the sputtering power was increased to 40W, the luminous performance of the film was significantly enhanced. When the boron target sputtering power was increased to 80W, the luminous intensity had dropped to about 70%.
除此而外，经过硼掺杂的薄膜具有肉眼可见的很强的可调宽光谱白光特性，如图3所示，且发光效率较高，可用于硅基集成光源或半导体发光。In addition, the boron-doped film has a strong tunable wide-spectrum white light characteristic visible to the naked eye, as shown in Figure 3, and has a high luminous efficiency, which can be used for silicon-based integrated light sources or semiconductor luminescence.
表1为上述制备的几组掺硼富硅氧化硅薄膜中Si，O，B原子百分含量：Table 1 shows Si, O, and B atomic percentages in several groups of boron-doped silicon-rich silicon oxide films prepared above:
表一Table I
实施例2：Example 2:
本实施例中，掺硼富硅氧化硅薄膜的制备采用（100）晶向的P型直拉单晶硅片，硅片单面抛光、电阻率ρ=1～5Ω.cm，溅射薄膜时衬底加热温度100度，射频溅射设备背底真空度为10-3Pa，溅射气体为含1%O2的高纯Ar+O2混合气体，硼靶功率30瓦，硅靶功率120瓦，溅射压强4Pa。然后对得到的薄膜在不同温度下进行热处理。In this example, a boron-doped silicon-rich silicon oxide film is prepared using a (100) oriented P-type Czochralski single-crystal silicon wafer, which is polished on one side and has a resistivity ρ=1-5Ω. The substrate heating temperature is 100 degrees, the background vacuum of the radio frequency sputtering equipment is 10 -3 Pa, the sputtering gas is a high-purity Ar+O 2 mixed gas containing 1% O 2 , the boron target power is 30 watts, and the silicon target power is 120 watts. Watts, sputtering pressure 4Pa. The obtained films were then heat-treated at different temperatures.
具体制备方法如下；Concrete preparation method is as follows;
（1）对硅片进行标准的RCA清洗，然后用稀氢氟酸去除硅片表面的氧化层后放入射频溅射设备，然后抽真空至真空度为1×10-3Pa，并同时将作为衬底的硅片加热至100度；在通入含O2的高纯Ar+O2混合气体的溅射腔内条件溅射压强4Pa下，利用高纯硅靶和高纯硼靶在硅单晶衬底片上溅射沉积一层富硅氧化硅掺硼薄膜。(1) Carry out standard RCA cleaning on the silicon wafer, then use dilute hydrofluoric acid to remove the oxide layer on the surface of the silicon wafer, put it into the radio frequency sputtering equipment, and then evacuate to a vacuum degree of 1×10 -3 Pa, and at the same time put The silicon wafer as the substrate is heated to 100 degrees; under the condition of sputtering pressure 4Pa in the sputtering chamber containing O2 containing high-purity Ar+ O2 mixed gas, the high-purity silicon target and the high-purity boron target are used on silicon A silicon-rich boron-doped thin film is deposited on a single crystal substrate by sputtering.
（2）通过真空管式炉，在高纯惰性气氛保护下对前述反应共溅射制备的掺硼富硅氧化硅薄膜进行随炉加热，然后进行900、1000和1100度高温保温1小时热处理，并随炉冷却，从而在薄膜中形成硼掺杂的纳米晶硅颗粒。(2) Through a vacuum tube furnace, under the protection of a high-purity inert atmosphere, the boron-doped silicon-rich silicon oxide film prepared by the aforementioned reactive co-sputtering is heated with the furnace, and then heat-treated at 900, 1000 and 1100 degrees for 1 hour at high temperatures, and Cooling in the furnace results in the formation of boron-doped nanocrystalline silicon particles in the film.
（3）将未经热处理及上述热处理后的薄膜在325nm紫外光激光照射下进行光致发光测试，如图4所示，其中1为未经热处理的，2、3和4为分别经900℃、1000℃和1100℃热处理后的薄膜发光曲线，其发射光范围在350-900nm，可见经不同温度热处理后的掺硼富硅氧化硅薄膜具有肉眼可见的很强的白光特性，且在一定的温度范围内，随着温度的升高，发光强度慢慢增强，当热处理温度达到1100℃时，发光强度明显增强。(3) The photoluminescence test was carried out on the film without heat treatment and the above heat treatment under 325nm ultraviolet laser irradiation, as shown in Figure 4, in which 1 is without heat treatment, and 2, 3 and 4 are respectively exposed to 900 ° C , 1000°C and 1100°C heat-treated film luminescence curves, the emitted light range is 350-900nm, it can be seen that the boron-doped silicon-rich silicon oxide film after heat treatment at different temperatures has a strong white light characteristic visible to the naked eye, and at a certain Within the temperature range, as the temperature increases, the luminous intensity gradually increases, and when the heat treatment temperature reaches 1100°C, the luminous intensity increases significantly.
上述制得的硼掺杂纳米晶硅镶嵌富硅氧化硅薄膜具有很强的可调宽光谱白光发射，其发光效率较高，可用于硅基集成光源或半导体发光。The boron-doped nanocrystalline silicon inlaid silicon-rich silicon oxide film prepared above has strong adjustable wide-spectrum white light emission and high luminous efficiency, and can be used for silicon-based integrated light sources or semiconductor luminescence.
需要说明的是，上述实施例仅用于说明本发明的技术方案，并不用于限制本发明的使用范围。此外，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，但这些修改同样包含在本发明的保护范围之内。It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit the application scope of the present invention. In addition, after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, but these modifications are also included in the protection scope of the present invention.
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