CN103422058B - A kind of boron-doping Si-rich silicon oxide film and its preparation method and application - Google Patents
A kind of boron-doping Si-rich silicon oxide film and its preparation method and application Download PDFInfo
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- CN103422058B CN103422058B CN201310275972.7A CN201310275972A CN103422058B CN 103422058 B CN103422058 B CN 103422058B CN 201310275972 A CN201310275972 A CN 201310275972A CN 103422058 B CN103422058 B CN 103422058B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 229910052796 boron Inorganic materials 0.000 claims abstract description 36
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 17
- 239000002159 nanocrystal Substances 0.000 abstract description 16
- 239000000377 silicon dioxide Substances 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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Abstract
The invention discloses a kind of boron-doping Si-rich silicon oxide film and its preparation method and application, use cosputtering to prepare boron-doping Si-rich silicon oxide film, and in silicon oxide film, generated the silicon nanocrystal of boron-doping by high-temperature heat treatment afterwards.Due to the formation that boron-doped silicon is nanocrystalline, the electric conductivity of thin film strengthens；Owing to boron is also in silica matrices and silicon nanocrystal and silica matrices interface, introduce the centre of luminescence, enhance the luminescence generated by light of thin film, and make it can be luminous with broad-spectrum white-light.Present invention is simple, and industry compatibility is good, and at silica-based integrated optical source or semiconductor light emitting, solaode, the field such as nonlinear optics has broad application prospects.
Description
Technical field
The present invention relates to the sub-field of silicon based opto-electronics, be specifically related to a kind of boron-doping Si-rich silicon oxide film and
Preparation method and application.
Background technology
Nanocrystal silicon, owing to having quantum confined effect, can strengthen the room temperature luminous efficiency of silicon, and have
There is the advantage compatible with existing semiconductor device technology it is considered to be prepare the ideal of silicon-based photoelectric device
Material.
In recent years, nanocrystal silicon material receives extensive concern due to its luminescence, is expected at biological, photograph
The fields such as bright and solar cell obtain application.But the luminous intensity of nanocrystal silicon is more weak, luminescence band
The most relevant to its distribution of sizes, it is impossible to obtain the strong white-light emitting of wide spectrum；It is additionally, since logical
The nano silicon material often prepared is all intrinsic semiconductor granule, and its characteristic such as electricity, optics is in phase
Close Shortcomings in application；Particularly in terms of electroluminescent, owing to intrinsic semiconductor nanocrystal silicon is led
The poorest, the cut-in voltage of needs is higher, thus limits its application.
Martin. Green group at room temperature, by magnetic control co-sputtering silicon (Si) target, quartz (SiO2) target,
Boron (B) target, back end vacuum 6.67 × 10-5Pa, introducing high-purity argon gas (Ar) is 0.2Pa to operating air pressure,
Have studied boron-doping amount and the impact on the luminescent properties of the Si-rich silicon oxide film of boron-doping of the Silicon-rich amount
(Synthesis and characterization of boron-doped Si quantum dots for all-Si
quantum dot tandem solar cells；X.J.Hao,E-C.Cho,C.Flynn,Y.S.Shen,S.C.Park,
G.Conibeer,M.A.Green；Solar Energy Materials & Solar Cells；93(2009)
273 279): the experiment of A group is the Si-rich silicon oxide film of the boron-doping of the different Si/O ratio of regulation.Fixing
It is added in SiO2Radio-frequency power on target is 120W, and being added in the power on B target is 30W, and change adds
Power on Si target regulates Si/O ratio；The experiment of B group is for identical Si/O ratio but difference contains B
The Si-rich silicon oxide film of amount, fixes and is added in SiO2Power on target is 120W, is added on Si target
Power be 25W, change is added in the power on B target: 0,9,15,30W.Through high-temperature hot
The thin film obtained after process, under 532 nanometer lasers excite, has had to nanocrystalline relevant the swashing of Si
Sub-glow peak (near-infrared luminous) is the phenomenon of cancellation with the increase of boron-doping amount, it is impossible to obtain wide spectrum
Strong white-light emitting.
Summary of the invention
For nanocrystal silicon in prior art present in the luminescence generated by light application not enough, the present invention provides
A kind of preparation method of boron-doping Si-rich silicon oxide film, the boron-doping Si-rich silicon oxide film that the method obtains
There is the strongest adjustable broad-spectrum white-light launch, and luminous efficiency is higher, can be applicable to silicon integrated optical source
Or semiconductor light emitting.
The preparation method of a kind of boron-doping Si-rich silicon oxide film, comprises the steps:
(1) using after Wafer Cleaning that resistivity is ρ=0.01～500 Ω .cm as substrate, by substrate
It is heated to 50-500 DEG C；
(2) it is 8 × 10 in vacuum-4～5 × 10-3Under Pa, it is passed through high-purity Ar and high-purity O2Gaseous mixture
Body, utilizes radio-frequency sputtering to carry out silicon target and boron target reacting cosputtering, deposits thin film on substrate；
(3), under inert atmosphere, the thin film obtaining step (2) carries out heat treatment, i.e. obtains boron-doping
Si-rich silicon oxide film.
The present invention uses cosputtering to prepare boron-doping Si-rich silicon oxide film, is then existed by high-temperature heat treatment
The silicon nanocrystal of boron-doping is generated in silicon oxide film.While entering silicon nanocrystal due to boron doping, also
It is positioned in silica matrices and the interface of matrix with silicon nanocrystal, introduces the centre of luminescence, Silicon-rich oxygen
SiClx boron-doping thin film can present strong broad-spectrum white-light under conditions of ultraviolet light incidence and launch, can conduct
Luminescent material.
In magnetron sputtering process, high-purity Ar as working gas, high-purity O2As reacting gas, two
The ratio of person needs to keep within the specific limits, as preferably, and high-purity Ar and high-purity in step (2)
O2High-purity O in mixed gas2Weight/mass percentage composition be 0.1%～1%.
For ensureing purity and the luminescent properties of boron-doping Si-rich silicon oxide film of masking, as preferably, walk
Suddenly in (2), the purity of silicon target and boron target is all higher than or equal to 99%.
In silicon rich silicon oxide boron-doping thin film prepared by the present invention, Silicon-rich amount and boron-doping amount are to finally giving
The luminescent properties of thin film directly affects, during Silicon-rich amount the highest (Si/O atomic ratio is more than or equal to 1),
Boron-doping rear film is without luminescence；During Silicon-rich amount low (Si/O atomic ratio is about 0.51～0.65), boron-doping rear film
There is white-light emitting；During medium Silicon-rich amount (Si/O atomic ratio is about 0.66～0.99), boron-doping rear film
White-light emitting best performance.And Silicon-rich amount and boron-doping amount are all realized by sputtering power during cosputtering,
Therefore as preferably, in step (2) during cosputtering, the sputtering power of silicon target is 70～190W, boron
The sputtering power of target is 5～100W, and the pressure of sputtering chamber is 1～5Pa.
Also need after sputter coating to make annealing treatment, promote that silicon nanocrystal split-phase in the base and activation are sent out
Light center.As preferably, in step (3), the condition of heat treatment is: at 600～1200 DEG C at heat
Manage 0.5～3 hour.
Present invention also offers the boron-doping Si-rich silicon oxide film that described preparation method obtains.
Present invention also offers boron-doping Si-rich silicon oxide film that described preparation method obtains in luminescence
The application in field, utilizes the performance that its broad-spectrum white-light is luminous, can be applied to luminescence generated by light and electricity
Photoluminescence.
The present invention prepares on the basis of nanocrystal silicon inlays Si-rich silicon oxide film traditional, utilizes altogether
Sputtering sedimentation introduces boron element, thus makes boron doping enter nanocrystal silicon in subsequent heat treatment, or
It is positioned in silica matrices, or is positioned at silica matrices and the nanocrystalline interface of Si so that nanometer
While crystal silicon and nanocrystal silicon inlay the electric conductivity enhancing of Si-rich silicon oxide film, enhance thin film
Photoluminescence intensity, and make it can be luminous with broad-spectrum white-light.Whole production technology is simple, and technology becomes
Ripe, there is certain prospects for commercial application.
Accompanying drawing explanation
Fig. 1 a is boron-doping thin film transmission electron microscope figure under low Silicon-rich amount；
Fig. 1 b is boron-doping thin film transmission electron microscope figure under middle Silicon-rich amount；
Fig. 2 is the boron-doping Si-rich silicon oxide film luminescence generated by light of the different boron content that embodiment 1 prepares
Figure；
Fig. 3 is that the luminescence of the boron-doping Si-rich silicon oxide film of the different boron content that embodiment 1 prepares is shone
Sheet；
It is thin that Fig. 4 is that certain fixing Silicon-rich amount that embodiment 1 prepares fixes the boron-doping silicon rich silicon oxide of boron-doping amount
The deposited of film and the luminescence generated by light figure after different temperatures heat treatment；
Fig. 5 is identical boron-doping amount, and the silicon rich silicon oxide boron-doping thin film of different Silicon-rich amounts is through 1100 degree
Luminescence generated by light figure after heat treatment.
Detailed description of the invention
In order to be better understood from the present invention, the solution of the present invention is expanded on further below in conjunction with embodiment,
But present disclosure is not limited solely to the following examples.
Embodiment 1:
In the present embodiment, the preparation of boron Doped nanocrystal silicon mosaic Si-rich silicon oxide film uses (100)
The p-type pulling of crystals silicon chip in crystal orientation, silicon chip single-sided polishing, electricalresistivityρ=10～20 Ω .cm, sputtering
Substrate heating temperature 500 degree during thin film, radio-frequency (RF) sputtering equipment back end vacuum is 2 × 10-3Pa, sputtering
Gas is containing 1%O2High-purity Ar+O2Mixed gas, silicon target power 80 watts, sputtering pressure 4Pa,
Put on the power on boron target during sputtering and be respectively 0,16,20,30,40 and 80 watts.
Concrete preparation method is as follows；
(1) RCA that silicon chip carries out standard cleans, and then removes silicon chip surface with diluted hydrofluoric acid
After oxide layer, silicon chip being put into radio-frequency (RF) sputtering equipment, being then evacuated to vacuum is 2 × 10-3Pa,
And the silicon chip as substrate is heated to 500 degree simultaneously；It is being passed through containing O2High-purity Ar+O2Mixing
Under the conditions of gas, sputtering pressure 4Pa, utilize high-purity silicon target and high purity boron target, at silicon monocrystalline substrate sheet
One layer of silicon rich silicon oxide boron-doping thin film of upper sputtering sedimentation；And by the sputtering power put on boron target
Change, change the incorporation of boron in thin film；
(2) by vacuum tube furnace, to previous reaction cosputtering system under high-purity inert atmosphere protection
Standby boron-doping Si-rich silicon oxide film carries out heating with stove, then carries out 1100 degree of soaks 1 little
Time heat treatment, and furnace cooling, thus form boron doped silicon nanoparticle in the film, this Silicon-rich
Under amount (low Silicon-rich amount, Si/O atomic ratio is about 0.52), the Electronic Speculum figure of different boron-doping content is similar, as
Shown in Fig. 1 a.
For embodying the impact on the luminescent properties of thin film of the Silicon-rich amount, in the case of other conditions are constant,
Changing silicon target and the sputtering power of boron target, the sputtering power making silicon target is 120 watts, the sputtering merit of boron target
Rate is 30 watts, then at 1100 degree of heat treatment thin film, obtains medium Silicon-rich amount as shown in Figure 1 b
The Electronic Speculum figure of boron-doping thin film under (Si/O atomic ratio is about 0.67).
As it is shown in figure 5, wherein curve 1 is silicon target 80 watts, boron target 30 watts, sputtering 1100 degree heat
Processing the luminescence generated by light curve of the thin film (low Silicon-rich amount) obtained, curve 2 is silicon target 120 watts, boron
Target 30 watts, the luminescence generated by light curve of 1100 degree of thin film being thermally treated resulting in (medium Silicon-rich amount) of sputtering,
Both boron-doping amounts are close, Silicon-rich amount the latter Geng Gao, it can be seen that the boron-doping thin film of medium Silicon-rich amount
There is more preferable white-light emitting performance.
In the case of other conditions are constant, change silicon target and the sputtering power of boron target, make spattering of silicon target
Penetrate power be 200 watts, the sputtering power of boron target be 40 watts, then at 1100 degree of heat treatment thin film,
Obtain the boron-doping thin film of high Silicon-rich amount (Si/O atomic ratio is about 1.1).Carry out the thin film obtained sending out
The test of optical property, test result shows luminous hardly.
(3) thin film after heat treatment is carried out luminescence generated by light survey under 325nm ultraviolet laser irradiates
Examination, as in figure 2 it is shown, its transmitting optical range is at 350-900nm, as can be seen from Figure 2, mixes through boron
The more unadulterated thin film of luminous peak position of miscellaneous thin film there occurs movement；And the doping of boron is to thin film
Luminescent properties has a significant impact, and along with the increase of boron doping amount, the luminescent properties of thin film slowly strengthens,
When boron target sputtering power increases to 40W, the luminescent properties of thin film has had and has been obviously enhanced, when boron target
When sputtering power increases to 80W, luminous intensity has descended to about 70%.
With the exception of this, through boron doped thin film, there is the strongest macroscopic adjustable broad-spectrum white-light
Characteristic, as it is shown on figure 3, and luminous efficiency higher, can be used for silica-based integrated optical source or semiconductor light emitting.
Table 1 be above-mentioned preparation several groups of boron-doping Si-rich silicon oxide film in Si, O, B atomic percent contains
Amount:
Table one
Embodiment 2:
In the present embodiment, the p-type in preparation employing (100) crystal orientation of boron-doping Si-rich silicon oxide film is straight
Crystal-pulling silicon chip, silicon chip single-sided polishing, electricalresistivityρ=1～5 Ω .cm, silicon during sputtered film
Temperature 100 degree, radio-frequency (RF) sputtering equipment back end vacuum is 10-3Pa, sputter gas is containing 1%O2's
High-purity Ar+O2Mixed gas, boron target power output 30 watts, silicon target power 120 watts, sputtering pressure 4Pa.
Then the thin film obtained is carried out at different temperatures heat treatment.
Concrete preparation method is as follows；
(1) RCA that silicon chip carries out standard cleans, and then removes silicon chip surface with diluted hydrofluoric acid
Putting into radio-frequency (RF) sputtering equipment after oxide layer, being then evacuated to vacuum is 1 × 10-3Pa, and will simultaneously
Silicon chip as substrate is heated to 100 degree；It is being passed through containing O2High-purity Ar+O2Spattering of mixed gas
Penetrate under intracavity condition sputtering pressure 4Pa, utilize high-purity silicon target and high purity boron target on silicon monocrystalline substrate sheet
One layer of silicon rich silicon oxide boron-doping thin film of sputtering sedimentation.
(2) by vacuum tube furnace, prepared by previous reaction cosputtering under high-purity inert atmosphere protection
Boron-doping Si-rich silicon oxide film carry out with stove heat, then carry out 900,1000 and 1100 degree height
Temperature 1 hour heat treatment of insulation, and furnace cooling, thus form boron doped nanocrystal silicon in the film
Granule.
(3) thin film after the most thermally treated and above-mentioned heat treatment is irradiated at 325nm ultraviolet laser
Under carry out luminescence generated by light test, as shown in Figure 4, wherein 1 is the most thermally treated, 2,3 and 4
For thin-film light emitting curve after 900 DEG C, 1000 DEG C and 1100 DEG C of heat treatments respectively, it launches light model
It is trapped among 350-900nm, it is seen that the boron-doping Si-rich silicon oxide film after different temperatures heat treatment has meat
Eye the strongest visible white light characteristic, and within the scope of certain temperature, along with the rising of temperature, send out
Light intensity slowly strengthens, and when heat treatment temperature reaches 1100 DEG C, luminous intensity is remarkably reinforced.
Above-mentioned prepared boron Doped nanocrystal silicon mosaic Si-rich silicon oxide film has the strongest adjustable wide light
Spectrum white light emission, its luminous efficiency is higher, can be used for silica-based integrated optical source or semiconductor light emitting.
It should be noted that above-described embodiment is merely to illustrate technical scheme, it is not used to
Limit the range of the present invention.Additionally, after having read the content that the present invention lectures, this area
The present invention can be made various changes or modifications by technical staff, but these amendments are also contained in the present invention
Protection domain within.
Claims (3)
1. a boron-doping Si-rich silicon oxide film presents the application that broad-spectrum white-light is launched under conditions of ultraviolet light incidence, it is characterised in that the preparation method of described boron-doping Si-rich silicon oxide film, comprises the steps:
(1) using after Wafer Cleaning that resistivity is ρ=0.01～500 Ω .cm as substrate, by silicon to 50-500 DEG C；
(2) it is 8 × 10 in vacuum-4～5 × 10-3Under Pa, it is passed through high-purity Ar and high-purity O2Mixed gas, utilizes radio-frequency sputtering to carry out silicon target and boron target reacting cosputtering, deposits thin film on substrate；
During cosputtering, the sputtering power of silicon target is 70～190W, and the sputtering power of boron target is 5～100W, and the pressure of sputtering chamber is 1～5Pa；
(3), under inert atmosphere, the thin film obtaining step (2) carries out heat treatment, i.e. obtains boron-doping Si-rich silicon oxide film；
The Si/O atomic ratio of described boron-doping Si-rich silicon oxide film is 0.51～0.65 or 0.66～0.99；
In step (3), the condition of heat treatment is: heat treatment 0.5～3 hours at 600～1200 DEG C.
Boron-doping Si-rich silicon oxide film the most according to claim 1 presents the application that broad-spectrum white-light is launched under conditions of ultraviolet light incidence, it is characterised in that high-purity Ar and high-purity O in step (2)2High-purity O in mixed gas2Weight/mass percentage composition be 0.1%～1%.
Boron-doping Si-rich silicon oxide film the most according to claim 1 presents the application that broad-spectrum white-light is launched under conditions of ultraviolet light incidence, it is characterised in that in step (2), the purity of silicon target and boron target is all higher than or equal to 99%.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725919A (en) * | 2004-07-23 | 2006-01-25 | 中国科学院半导体研究所 | The preparation method who comprises the electroluminescent device of silicon based rear-earth-doped luminous material |
| JP2007067104A (en) * | 2005-08-30 | 2007-03-15 | Tokyo Denki Univ | High luminance/low driving voltage type nano-silicon light emitting device, and its manufacturing method |
| CN102255016A (en) * | 2011-08-17 | 2011-11-23 | 南京大学 | Silicon-based near infrared light emitting material and preparation method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725919A (en) * | 2004-07-23 | 2006-01-25 | 中国科学院半导体研究所 | The preparation method who comprises the electroluminescent device of silicon based rear-earth-doped luminous material |
| JP2007067104A (en) * | 2005-08-30 | 2007-03-15 | Tokyo Denki Univ | High luminance/low driving voltage type nano-silicon light emitting device, and its manufacturing method |
| CN102255016A (en) * | 2011-08-17 | 2011-11-23 | 南京大学 | Silicon-based near infrared light emitting material and preparation method |
Non-Patent Citations (3)
| Title |
|---|
| Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films;Junjun Huang, et al.;《Applied Surface Science》;20130117;第270卷;全文 * |
| Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells;X.J. Hao, et al.;《Solar Energy Materials & Solar Cells》;20081211;第93卷(第2期);全文 * |
| The location and doping effect of boron in Si nanocrystals embedded silicon oxide film;Min Xie，et al.;《Applied Physics Letters》;20130328;第102卷(第12期);参见第123108-1页左栏第22-26行、右栏第27-38行 * |
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