CN109449075B - Backlight source module of liquid crystal display device - Google Patents
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- CN109449075B CN109449075B CN201811192071.0A CN201811192071A CN109449075B CN 109449075 B CN109449075 B CN 109449075B CN 201811192071 A CN201811192071 A CN 201811192071A CN 109449075 B CN109449075 B CN 109449075B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/06—Lamps with luminescent screen excited by the ray or stream
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
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Abstract
The invention provides a backlight source module of a liquid crystal display device, which omits an isolation column, greatly reduces the complexity of the backlight source structure, has extremely simple manufacturing process and reduces the manufacturing cost, and meanwhile, the distance between a cathode substrate and an anode substrate is determined by adjustable bosses at two sides of a backlight source frame, thereby being suitable for the requirements of backlight sources of various application scenes.
Description
Technical Field
The invention relates to the field of display equipment, in particular to a backlight source module of a liquid crystal display device.
Background
The field emission backlight source is used as a novel planar light source, is not only a planar light source but also a self-luminous component, and can save optical films such as a diffusion film, a light guide plate and the like when applied to a backlight module, thereby reducing the cost and pressure; meanwhile, the LED display screen has the advantages of high luminous efficiency, low power consumption, long service life, thin thickness, convenience in adjustment and the like, is particularly suitable for large and medium-sized LCD displays, and has profound significance on display screens of more than 76 cm. In addition, the field emission backlight is a two-dimensional light source, is easy to scan, can form a matrix structure to generate local dimming, and can improve the dynamic range of the LCD as the backlight of the LCD.
At present, the field emission backlight source at home and abroad is mainly concentrated on a carbon nano tube field emission (CNT-FED) backlight source, and the Carbon Nano Tube (CNT) has wide application prospect in the field emission flat panel display field due to the unique geometrical structure and excellent mechanical, electrical and thermal properties. On the other hand, zinc oxide nanostructures exhibit excellent optoelectronic properties due to their structural morphology similar to CNTs. It is also a research focus due to its excellent performance. However, both of the above materials have their own disadvantages, and the carbon nanotubes are easily destroyed by reaction with oxygen due to the carbon-based material, and the requirement of the vacuum degree is high when the carbon nanotubes are used as a field emitter; zinc oxide is itself an oxide, which can overcome the above-mentioned disadvantages of carbon nanotubes, however, since zinc oxide is a semiconductor. The conductivity is inferior to that of carbon nanotubes, and therefore the field emission intensity of most zinc oxide emitters is inferior to that of carbon nanotubes.
In view of the above, it is desirable to provide a novel planar field emission backlight structure, which breaks through the barriers in the prior art.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a backlight module of a liquid crystal display device.
The invention is realized by the following technical scheme:
the backlight source module comprises an anode substrate, a cathode substrate and a backlight source frame, wherein the anode substrate is positioned at the upper part of the backlight source frame, the cathode substrate is positioned at the lower part of the backlight source frame, the anode substrate consists of a conductive substrate and a fluorescent layer arranged on the inner surface of the conductive substrate, and the cathode substrate comprises a glass substrate, a transparent cathode arranged on the surface of the glass substrate, a grid and a doped composite carbon nanotube filled in a gap between the cathode and the grid.
Further, the anode substrate and the cathode substrate are isolated by adjustable bosses on two sides of the backlight frame, and each boss comprises a boss body, an adjusting screw rod, a sliding column and a locking screw.
Further, adjusting screw sets up the inside of boss body, through screw-thread fit, the slip post is located adjusting screw's lower extreme sets up in the slide of boss body, along with adjusting screw joint motion, locking screw is located the side of slip post, sets up in the inside of boss body for the slip post is locked.
Furthermore, a high-voltage electric field is applied between the transparent cathode and the grid of the cathode substrate, the effective components in the doped composite carbon nanotube layer emit electrons under the excitation of the high-voltage electric field, the electrons bombard the fluorescent layer through the doped composite carbon nanotube array, light emitted by the fluorescent layer directly penetrates through the transparent cathode and the glass substrate to be emitted, and the uniformity of emergent light of the backlight source is ensured under the action of the doped composite carbon nanotube layer in the cathode.
The backlight module comprises an anode substrate, a cathode substrate and a backlight frame, wherein the anode substrate is positioned at the upper part of the backlight frame, the cathode substrate is positioned at the lower part of the backlight frame, the anode substrate and the cathode substrate are isolated by adjustable bosses at two sides of the backlight frame, and the anode substrate consists of a conductive substrate and a fluorescent layer arranged on the inner surface of the conductive substrate; the cathode substrate comprises a transparent glass substrate, a transparent cathode arranged on the surface of the glass substrate, and a doped composite carbon nanotube layer arranged on the surface of the transparent cathode.
Further, in the backlight module, a high-voltage electric field is applied to the transparent cathode of the cathode substrate and the conductive substrate of the anode substrate, active ingredients in the doped composite carbon nanotube layer emit electrons under the excitation of the high-voltage electric field, the electrons bombard the fluorescent layer through the doped composite carbon nanotube array, light emitted by the fluorescent layer directly penetrates through the transparent cathode and the glass substrate to be emitted, and the uniformity of emergent light of the backlight is ensured under the action of the doped composite carbon nanotube layer in the cathode.
Further, the specific manufacturing steps of the doped composite carbon nanotube are as follows:
and step 35, coating the mixed metal precursor solution on the carbon nano tube by using a one-step spin coating method to form an a-CuSnI layer, and carrying out annealing reaction to prepare the doped composite carbon nano tube.
Further, the thickness of the doped composite carbon nanotube is 28-34 microns, wherein the thickness of the carbon nanotube layer is preferably 16-20 microns, and the thickness of the a-CuSnI layer is preferably 8-18 microns.
The invention has the beneficial effects that:
the invention provides a backlight source module of a liquid crystal display device, which omits an isolation column, greatly reduces the complexity of the backlight source structure, has extremely simple manufacturing process and reduces the manufacturing cost, and meanwhile, the distance between a cathode substrate and an anode substrate is determined by adjustable bosses at two sides of a backlight source frame, thereby being suitable for the requirements of backlight sources of various application scenes.
In addition, a novel doped composite carbon nanotube is designed, so that the current emission of the carbon nanotube array is more uniform, the emission current density and stability of the carbon nanotube array are improved, and the light emitting uniformity and stability are obviously improved.
Drawings
Fig. 1 is a schematic view of a backlight module of a liquid crystal display device according to a first embodiment of the invention;
FIG. 2 is a cross-sectional view of an adjustment boss provided by the present invention;
fig. 3 is a schematic view of a backlight module of a liquid crystal display device according to a second embodiment of the invention;
FIG. 4 is an SEM morphology view of a film provided by the present invention.
Wherein: 1-anode substrate, 11-conductive substrate, 12-fluorescent layer, 2-cathode substrate, 21-glass substrate, 22-transparent cathode, 23-grid, 24-doped composite carbon nanotube, 3-backlight frame, 110-anode substrate, 111-conductive substrate, 112-fluorescent layer, 120-cathode substrate, 121-glass substrate, 122-transparent cathode, 123-doped composite carbon nanotube, 130-backlight frame, 31-boss body, 32-adjusting screw, 33-sliding column, and 34-locking screw.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Example 1:
as shown in fig. 1, the backlight module of a liquid crystal display device includes an anode substrate 1, a cathode substrate 2 and a backlight frame 3, wherein the anode substrate 1 is located at the upper part of the backlight frame 3, the cathode substrate 2 is located at the lower part of the backlight frame 3, the anode substrate 1 and the cathode substrate 2 are isolated by adjustable bosses at two sides of the backlight frame 3, and the anode substrate 1 is composed of a conductive substrate 11 and a fluorescent layer 12 arranged on the inner surface of the conductive substrate 11; the cathode substrate 2 has a transparent glass substrate 21, a transparent cathode 22 disposed on the surface of the glass substrate 21, a gate 23, and a doped composite carbon nanotube 24 filled in the gap between the cathode 22 and the gate 23.
The adjustable boss of the backlight frame, as shown in fig. 2, includes a boss body 31, an adjusting screw 32, a sliding column 33, and a locking screw 34. The adjusting screw rod 32 is arranged inside the boss body 31 and is matched with the boss body through threads; the sliding column 33 is positioned at the lower end of the adjusting screw rod 32, is arranged in the slideway of the boss body 31 and moves together with the adjusting screw rod 32; the locking screw 34 is located at the side of the sliding column 33, and is disposed inside the boss body 31 for locking the sliding column 33.
In the backlight module of the liquid crystal display device, a high-voltage electric field is applied between the transparent cathode 22 and the grid 23 of the cathode substrate 2, active ingredients in the doped composite carbon nanotube layer 24 emit electrons under the excitation of the high-voltage electric field, the electrons bombard the fluorescent layer 12 through the doped composite carbon nanotube array, light rays emitted by the fluorescent layer 12 directly penetrate through the transparent cathode 22 and the glass substrate 21 to be emitted, and the uniformity of emergent light of the backlight is ensured under the action of the doped composite carbon nanotube layer 24 in the cathode 2.
The backlight source module of the liquid crystal display device adopting the doped composite carbon nanotube layer has low requirement on vacuum degree, so that the use of an isolation column can be omitted, the uniformity of a medium is ensured by injecting argon or nitrogen, the complexity of the backlight source structure is greatly reduced, and meanwhile, the distance between the cathode substrate 2 and the anode substrate 1 is determined by the adjustable bosses at two sides of the backlight source frame 3, so that the backlight source module can adapt to the requirements of backlight sources of various application scenes.
Example 2:
a backlight module of a liquid crystal display device, as shown in fig. 3, comprising an anode substrate 110, a cathode substrate 120, and a backlight frame 130, wherein: the anode substrate 110 is located at the upper part of the backlight frame 130, the cathode substrate 120 is located at the lower part of the backlight frame 130, the anode substrate 110 and the cathode substrate 120 are isolated by adjustable bosses at two sides of the backlight frame 130, and the anode substrate 110 is composed of a conductive substrate 111 and a fluorescent layer 112 arranged on the inner surface of the conductive substrate 111; the cathode substrate 120 includes a transparent glass substrate 121, a transparent cathode 122 disposed on the surface of the glass substrate 121, and a doped composite carbon nanotube layer 123 disposed on the surface of the transparent cathode 122.
In the backlight module of the liquid crystal display device, a high-voltage electric field is applied to the transparent cathode 122 of the cathode substrate 120 and the conductive substrate 111 of the anode substrate 110, active ingredients in the doped composite carbon nanotube layer 123 emit electrons under the excitation of the high-voltage electric field, the electrons bombard the fluorescent layer 112 through the doped composite carbon nanotube array, light emitted by the fluorescent layer 112 directly penetrates through the transparent cathode 122 and the glass substrate 121 to be emitted, and the uniformity of emergent light of the backlight is ensured under the action of the doped composite carbon nanotube layer 123 in the cathode 120. The backlight source module of the liquid crystal display device adopting the doped composite carbon nanotube layer has low requirement on the vacuum degree, so that the use of an isolation column can be omitted, the uniformity of a medium is ensured by injecting argon or nitrogen, and the complexity of the backlight source structure is greatly reduced.
Example 3:
the specific manufacturing steps of the doped composite carbon nanotube of the invention are as follows:
and step 35, stirring the metal precursor solution at the rotating speed of 3000rpm for 60s, coating the mixed metal precursor solution on the carbon nano tube by using a one-step spin coating method to form an a-CuSnI layer, carrying out annealing reaction at 130 ℃, and standing in argon for 5 hours to prepare the doped composite carbon nano tube, wherein preferably, the thickness of the doped composite carbon nano tube is 28-34 microns, the thickness of the carbon nano tube layer is 16-20 microns, and the thickness of the a-CuSnI layer is 8-18 microns.
Chemical states of Cu, I and Sn, Cu 2p in a-CuSnI layer are analyzed through X-ray photoelectron spectroscopy3/2And I3 d5/2The bonding energy of the alpha-CuSnI is 925 eV and 607eV which are consistent with gamma-CuI, the valence states of all Sn ions in the alpha-CuSnI are 4+, and Sn3d5/2The bonding energy of (a) is 485.2eV, and Sn can stabilize the amorphous state of a-CuSnI by suppressing the crystallization of the gamma-CuI phase. The electronic structure of a-CuSnI is researched by Ultraviolet Photoelectron Spectroscopy (UPS) measurement, as shown in FIG. 4, under the condition that the molar ratio of (Sn/Cu + Sn) is 10%, the SEM shape of the CuSnI film can clearly detect the amorphous state, and the covalent property of the system bonding is weakened and the metal is weakened after an external electric field is addedThe performance is enhanced, and the transfer of field emission electrons is facilitated.
Example 4:
the specific manufacturing steps of the backlight module of the liquid crystal display device in embodiment 1 of the present invention are as follows:
and manufacturing a cathode electrode and a grid electrode. And forming a cathode electrode and a gate electrode of thick-film silver paste on the upper surface of the glass substrate by utilizing a photoetching technology, wherein the cathode electrode and the gate electrode are positioned on the same plane and are arranged in parallel and alternately.
And (5) manufacturing a cathode substrate. By the method described in example 3, the doped composite carbon nanotube was disposed on the surface of the cathode electrode and in the gap between the cathode electrode and the gate electrode, thereby forming a field emission cathode substrate. And (5) manufacturing an anode substrate. And coating the fluorescent powder layer on the surface of the clean conductive substrate by adopting a printing or spraying technology.
And (5) manufacturing a backlight source. And aligning the cathode substrate and the anode substrate into a backlight source frame, integrally placing the cathode substrate and the anode substrate into a high-temperature oven, sintering at 530 ℃ for 30min, exhausting and sealing to form the field emission backlight source.
Furthermore, the distance between the cathode substrate and the anode substrate is determined by the height of bosses at two sides of the backlight frame, the height of the bosses is 10000 μm, the adjusting screw is a fine thread, and the thread pitch is 1000 μm.
Furthermore, the cathode electrodes and the grid electrodes are arranged on the same plane in parallel and alternately, a gap is formed between the cathode electrodes and the grid electrodes, and the width of the gap is 1-3000 μm.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the invention is not limited by the scope of the appended claims.
Claims (2)
1. The backlight source module of the liquid crystal display device is characterized by comprising an anode substrate, a cathode substrate and a backlight source frame, wherein the anode substrate is positioned at the upper part of the backlight source frame, and the cathode substrate is positioned below the backlight source frameThe cathode substrate comprises a glass substrate, a transparent cathode arranged on the surface of the glass substrate, a grid and doped composite carbon nanotubes filled in a gap between the cathode and the grid, the cathode and the grid are arranged on the same plane in parallel and alternately, and the boss comprises a boss body, an adjusting screw rod, a sliding column and a locking screw; the adjusting screw rod is arranged in the boss body and is in threaded fit, the sliding column is positioned at the lower end of the adjusting screw rod and is arranged in the slideway of the boss body and moves together with the adjusting screw rod, and the locking screw is positioned on the side surface of the sliding column and is arranged in the boss body and used for locking the sliding column; by applying a high-voltage electric field between the transparent cathode and the grid of the cathode substrate, the active ingredients in the doped composite carbon nanotube layer emit electrons under the excitation of the high-voltage electric field, the electrons bombard the fluorescent layer through the doped composite carbon nanotube array, and light rays emitted by the fluorescent layer directly penetrate through the transparent cathode and the glass substrate to be emitted out, so that a backlight source with uniform emergent light is formed; the specific manufacturing steps of the doped composite carbon nanotube are as follows: preparing a substrate, wherein the substrate is selected from a transparent substrate or a biological fusion type substrate, scribing the prepared substrate, and cleaning the substrate; the carbon nanotube prepared by catalyst chemical vapor deposition method selects metal Ni as metal catalyst, the substrate of the prepared catalyst film is placed on a heating table, carbon source gas is composed of nitrogen and acetylene, and the reaction chamber is vacuumized to 10 DEG- 3Removing impurities and water vapor at mbar or lower pressure, heating the heating table to 650 deg.C, immediately applying voltage to generate plasma gas, and controlling growth temperature at 750 deg.C; controlling the height of the carbon nano tube by controlling the growth time; dissolving CuI and SnI in 2-methoxy ethanol, wherein the concentrations of metal precursor solutions are 0.52m and 0.37m respectively, the molar ratio of Sn/(Cu + Sn) is 10%, and the pH value is controlled at 8.5; mixing the metal precursor solution for 45 minutes using an ultrasonic chopper and filtering with a 0.40 μm filter membrane; at a rotational speed of 3000rpmStirring the metal precursor solution for 60s, coating the mixed metal precursor solution on a carbon nano tube by using a one-step spin coating method to form an a-CuSnI layer, carrying out annealing reaction at 130 ℃, and standing in argon for 5 hours to prepare a doped composite carbon nano tube, wherein the thickness of the doped composite carbon nano tube is 28-34 microns, the thickness of the carbon nano tube layer is 16-20 microns, and the thickness of the a-CuSnI layer is 8-18 microns; chemical states of Cu, I and Sn, Cu 2p in a-CuSnI layer are analyzed through X-ray photoelectron spectroscopy3/2And I3 d5/2The bonding energy of the alpha-CuSnI is 925 eV and 607eV which are consistent with gamma-CuI, the valence states of all Sn ions in the alpha-CuSnI are 4+, and Sn3d5/2The bonding energy of the alpha-CuSnI is 485.2eV, the amorphous state of the alpha-CuSnI is stabilized by Sn through inhibiting the crystallization of a gamma-CuI phase, and the electronic structure of the alpha-CuSnI is researched by using Ultraviolet Photoelectron Spectroscopy (UPS) measurement.
2. The backlight module of claim 1, wherein the distance between the cathode substrate and the anode substrate is determined by the height of the bosses at the two sides of the backlight frame, the height of the bosses is 10000 μm, the adjusting screw is a fine thread, and the pitch of the adjusting screw is 500 μm and 1000 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1447369A (en) * | 2002-03-27 | 2003-10-08 | 索尼公司 | Cold-cathod field emitting element, cold-cathod field emitting display device and mfg. method for both of them |
| CN206254887U (en) * | 2016-11-24 | 2017-06-16 | 清远浩和仪器设计有限公司 | A kind of cargo securing device of high capacity waggon |
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| CN101169551A (en) * | 2006-10-25 | 2008-04-30 | 东元电机股份有限公司 | Field emission type backlight source structure |
| US8318049B2 (en) * | 2008-09-30 | 2012-11-27 | Samsung Electronics Co., Ltd. | Composition for forming electron emission source, electron emission source including the composition, method of preparing the electron emission source, and field emission device including the electron emission source |
| KR101518380B1 (en) * | 2008-12-26 | 2015-05-11 | 삼성전자주식회사 | Field emission device and method of manufacturing the same |
| CN104409317B (en) * | 2014-05-31 | 2016-09-07 | 福州大学 | A kind of plane field emission backlight and manufacture method thereof |
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| CN1447369A (en) * | 2002-03-27 | 2003-10-08 | 索尼公司 | Cold-cathod field emitting element, cold-cathod field emitting display device and mfg. method for both of them |
| CN206254887U (en) * | 2016-11-24 | 2017-06-16 | 清远浩和仪器设计有限公司 | A kind of cargo securing device of high capacity waggon |
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