CN113557594A - 基板处理方法以及基板处理装置 - Google Patents

基板处理方法以及基板处理装置 Download PDF

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Publication number: CN113557594A
Authority: CN; China
Prior art keywords: substrate; liquid; flow rate; main surface; gas
Prior art date: 2019-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CN202080020030.2A

Other languages

English (en)

Chinese (zh)

Inventor

三浦淳靖

江户彻

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Screen Holdings Co Ltd

Original Assignee

Screen Holdings Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-03-20

Filing date

2020-02-06

Publication date

2021-10-26

2020-02-06 Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd

2021-10-26 Publication of CN113557594A publication Critical patent/CN113557594A/zh

Status Pending legal-status Critical Current

Links

239000000758 substrate Substances 0.000 title claims abstract description 278
238000003672 processing method Methods 0.000 title claims abstract description 17
239000007788 liquid Substances 0.000 claims abstract description 310
239000000126 substance Substances 0.000 claims abstract description 149
230000002093 peripheral effect Effects 0.000 claims abstract description 85
238000000034 method Methods 0.000 claims description 15
230000007246 mechanism Effects 0.000 claims description 14
239000000243 solution Substances 0.000 description 67
239000007789 gas Substances 0.000 description 48
239000010408 film Substances 0.000 description 16
101150038956 cup-4 gene Proteins 0.000 description 15
238000005530 etching Methods 0.000 description 12
230000008569 process Effects 0.000 description 12
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
239000008367 deionised water Substances 0.000 description 6
239000011550 stock solution Substances 0.000 description 6
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
238000007599 discharging Methods 0.000 description 4
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
239000010409 thin film Substances 0.000 description 4
239000007864 aqueous solution Substances 0.000 description 3
238000010586 diagram Methods 0.000 description 3
238000012986 modification Methods 0.000 description 3
230000004048 modification Effects 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
239000002904 solvent Substances 0.000 description 3
238000003860 storage Methods 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
235000011114 ammonium hydroxide Nutrition 0.000 description 2
238000001035 drying Methods 0.000 description 2
238000005401 electroluminescence Methods 0.000 description 2
239000011521 glass Substances 0.000 description 2
235000015073 liquid stocks Nutrition 0.000 description 2
239000011259 mixed solution Substances 0.000 description 2
229910017604 nitric acid Inorganic materials 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
238000010129 solution processing Methods 0.000 description 2
239000010936 titanium Substances 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
239000004809 Teflon Substances 0.000 description 1
229920006362 Teflon® Polymers 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
239000000908 ammonium hydroxide Substances 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
230000008094 contradictory effect Effects 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
230000003028 elevating effect Effects 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
230000002209 hydrophobic effect Effects 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
229910000069 nitrogen hydride Inorganic materials 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
230000009467 reduction Effects 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
239000002356 single layer Substances 0.000 description 1
238000005507 spraying Methods 0.000 description 1
230000007480 spreading Effects 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000003068 static effect Effects 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Cleaning Or Drying Semiconductors (AREA)
Weting (AREA)
Manufacturing Of Printed Circuit Boards (AREA)

CN202080020030.2A 2019-03-20 2020-02-06 基板处理方法以及基板处理装置 Pending CN113557594A (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2019-052732		2019-03-20
JP2019052732A JP7201494B2 (ja)	2019-03-20	2019-03-20	基板処理方法および基板処理装置
PCT/JP2020/004588 WO2020189072A1 (ja)	2019-03-20	2020-02-06	基板処理方法および基板処理装置

Publications (1)

Publication Number	Publication Date
CN113557594A true CN113557594A (zh)	2021-10-26

Family

ID=72519277

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN202080020030.2A Pending CN113557594A (zh)	2019-03-20	2020-02-06	基板处理方法以及基板处理装置

Country Status (5)

Country	Link
JP (1)	JP7201494B2 (ja)
KR (1)	KR102648039B1 (ja)
CN (1)	CN113557594A (ja)
TW (1)	TWI787582B (ja)
WO (1)	WO2020189072A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN117316812A (zh) *	2023-08-14	2023-12-29	深圳远荣半导体设备有限公司	一种晶圆清洗机及晶圆搬运的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005243940A (ja) *	2004-02-26	2005-09-08	Dainippon Screen Mfg Co Ltd	基板処理装置および基板処理方法
JP2009266951A (ja) *	2008-04-23	2009-11-12	Dainippon Screen Mfg Co Ltd	基板処理方法および基板処理装置
JP2015185803A (ja) *	2014-03-26	2015-10-22	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置
JP2016040812A (ja) *	2014-08-13	2016-03-24	東京エレクトロン株式会社	基板処理装置および基板処理方法

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JP3745214B2 (ja) *	2000-09-27	2006-02-15	大日本スクリーン製造株式会社	ベベルエッチング装置およびベベルエッチング方法
JP3917393B2 (ja) *	2001-08-29	2007-05-23	大日本スクリーン製造株式会社	基板処理装置
JP4089809B2 (ja)	2002-03-13	2008-05-28	ＳｕｍｃｏＴｅｃｈｘｉｖ株式会社	半導体ウェーハのエッジ部の酸化膜除去装置
JP4446875B2 (ja) *	2004-06-14	2010-04-07	大日本スクリーン製造株式会社	基板処理装置
JP5203435B2 (ja)	2010-09-17	2013-06-05	東京エレクトロン株式会社	液処理方法、その液処理方法を実行させるためのプログラムを記録した記録媒体及び液処理装置
JP6718714B2 (ja) *	2016-03-25	2020-07-08	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法および基板処理装置
JP6916003B2 (ja) *	2017-02-24	2021-08-11	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法および基板処理装置
JP7034634B2 (ja) *	2017-08-31	2022-03-14	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法および基板処理装置

2019
- 2019-03-20 JP JP2019052732A patent/JP7201494B2/ja active Active
2020
- 2020-02-06 CN CN202080020030.2A patent/CN113557594A/zh active Pending
- 2020-02-06 KR KR1020217031485A patent/KR102648039B1/ko active IP Right Grant
- 2020-02-06 WO PCT/JP2020/004588 patent/WO2020189072A1/ja active Application Filing
- 2020-02-14 TW TW109104616A patent/TWI787582B/zh active

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005243940A (ja) *	2004-02-26	2005-09-08	Dainippon Screen Mfg Co Ltd	基板処理装置および基板処理方法
JP2009266951A (ja) *	2008-04-23	2009-11-12	Dainippon Screen Mfg Co Ltd	基板処理方法および基板処理装置
JP2015185803A (ja) *	2014-03-26	2015-10-22	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置
JP2016040812A (ja) *	2014-08-13	2016-03-24	東京エレクトロン株式会社	基板処理装置および基板処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN117316812A (zh) *	2023-08-14	2023-12-29	深圳远荣半导体设备有限公司	一种晶圆清洗机及晶圆搬运的方法

Also Published As

Publication number	Publication date
TWI787582B (zh)	2022-12-21
KR102648039B1 (ko)	2024-03-18
TW202036707A (zh)	2020-10-01
JP7201494B2 (ja)	2023-01-10
WO2020189072A1 (ja)	2020-09-24
JP2020155588A (ja)	2020-09-24
KR20210133288A (ko)	2021-11-05

Legal Events

Date	Code	Title
2021-10-26	PB01	Publication
2021-10-26	PB01	Publication
2021-11-12	SE01	Entry into force of request for substantive examination
2021-11-12	SE01	Entry into force of request for substantive examination

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JP5615650B2 (ja)	2014-10-29	基板処理方法および基板処理装置
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JP2015088737A (ja)	2015-05-07	基板処理方法および基板処理装置
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US10665479B2 (en)	2020-05-26	Substrate treatment device and substrate treatment method
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US20220205093A1 (en)	2022-06-30	Apparatus and method for processing substrate
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CN113557594A - 基板处理方法以及基板处理装置 - Google Patents

Info

Links

Images

Classifications

Landscapes

Applications Claiming Priority (3)

Publications (1)

Family

ID=72519277

Family Applications (1)

Country Status (5)

Cited By (1)

Citations (4)

Family Cites Families (8)

Patent Citations (4)

Cited By (1)

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