CN113025998A - Substrate table for diamond film microwave plasma chemical vapor deposition - Google Patents
Substrate table for diamond film microwave plasma chemical vapor deposition Download PDFInfo
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- CN113025998A CN113025998A CN201911341286.9A CN201911341286A CN113025998A CN 113025998 A CN113025998 A CN 113025998A CN 201911341286 A CN201911341286 A CN 201911341286A CN 113025998 A CN113025998 A CN 113025998A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Abstract
The invention provides a substrate table combining heat management and magnetic field guided plasma, which is characterized in that the temperature of different areas of plasma is balanced through heat management design by burying materials with different heat conductivities in the substrate table, and the temperature gradient in the aspect of the temperature level of the substrate formed when the high-temperature plasma bombards the substrate is reduced. In addition, a magnet is arranged in the substrate stage, the plasma is guided by a magnetic field, and the shape distribution of the plasma is changed by burying a soft magnetic material, so that the size of the temperature effective area of the substrate and the uniformity of the plasma are further improved. The invention has the advantages of obviously improving the effective area of the film deposition of the diamond microwave plasma chemical vapor deposition process and improving the density distribution of plasma, along with simple device and convenient implementation.
Description
Technical Field
The invention relates to a semiconductor preparation process, in particular to a substrate table in a microwave plasma chemical vapor deposition device of a diamond film.
Background
The diamond film has extremely high electron mobility, hole mobility, saturation velocity, breakdown electric field, highest thermal conductivity, extremely high light transmittance from vacuum ultraviolet light to far infrared light wave band, good corrosion resistance and smaller thermal expansion coefficient, and is considered as a third-generation MEMS/NEMS material following silicon. Due to the excellent performance of the diamond material, the diamond material has wide application prospect in high-tech fields such as electronics, optics, acoustics, thermal, machinery, corrosion resistance, radiation resistance and the like, industries, military and the like, and can bring great influence on human life and great economic benefit.
The diamond film is prepared by high temperature high pressure process (HPHT), hot wire chemical vapor deposition (HFCVD), Plasma Chemical Vapor Deposition (PCVD). Microwave Plasma Chemical Vapor Deposition (MPCVD) has become the preferred method for producing diamond because of its ability to stably deposit a relatively uniform, pure and high quality diamond film. However, the microwave plasma chemical vapor deposition method for preparing the diamond film has certain defects in the engineering and industrialization processes, namely, the deposition rate is low, the deposition area is small, and the uniformity of the deposited film is poor. In order to realize industrial application of diamond, how to improve the effective deposition area and uniformity of the diamond film becomes a hot point of research. The process of depositing diamond film by microwave plasma chemical vapor deposition method generally comprises: the ionization of methane, the ionization of hydrogen, and the electron collision of the existing plasma are as follows:
wherein the neutral CH3Radical, C2H2The radicals are the main growth radicals of the diamond film, and the H radicals are the main radicals inhibiting the growth of the non-diamond phase. CH (CH)3The improvement of the concentration of the radicals and the H radicals has obvious effect on improving the deposition rate and the quality of the diamond film.
The current methods for generating plasma include capacitive plasma generation architectures, inductively-excited plasma generation architectures, electron cyclotron resonance ECR, and microwave resonance cavity architectures. The frameworks in which high density plasma is generated are electron cyclotron resonance ECR, and microwave resonance cavity frameworks.
The typical structure of ECR deposition chamber is characterized in that a vertical magnetic field with more than 800 Gauss is parallel to the electric field of microwave at the upper part of the chamber, so that the cyclotron motion of electrons generates resonance, thus exciting plasma and then conveying the plasma to a substrate to be deposited, and the plasma generating area of the ECR deposition chamber is far away from the area of the substrate. At present, the reaction cavity for growing diamond is the most commonly used reaction cavity for MPCVD, and the principle is that microwave is input into a metal cavity which is approximately cylindrical, and the shape and the size of the cylindrical cavity can generate microwave resonance just with the RF frequency of the microwave, so that a strong electric field is generated above a substrate to excite and generate plasma. The frequency of the microwave resonant cavity is 2.45GHz, and the plasma generated by the method has high density, and can generate a large amount of heat to heat the substrate table. Since the electric field distribution of the electric field resonance is a standing wave, the center is high, amplitude roll-off occurs away from the center, and the distribution is very uneven in the radial direction and the axial direction, so that the temperature of the substrate on the substrate table is distributed in the radial direction and is not even (the temperature of the gas above the substrate is distributed in the radial direction as shown in fig. 1). For the same reason, as shown in fig. 2, the density distribution of plasma above the substrate is also sharply attenuated in the radial direction. This greatly affects the effective area of the MPCVD grown diamond film and no literature or design exists to date to address this problem.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a substrate table design combining heat conduction and magnetic field guiding plasma, which mainly comprises a water-cooling cavity, a substrate support (7) and the like, wherein the water-cooling cavity comprises a water-cooling cavity wall (1), a cover plate (2) and a sealing ring (3), magnets (17) and (18) are arranged in the water-cooling cavity, the magnets (17) and (18) are positioned in the water-cooling cavity (1) and are symmetrically arranged by taking the central shaft of the water-cooling cavity (1) as the center, the magnets (17) and (18) are fixed on the upper plane of the water-cooling cavity wall (1) in the water-cooling cavity of the water-cooling cavity (1), a water flow gap is reserved between the magnets and the cover plate (2), so that the cover plate (6) can be conveniently cooled and adjusted, the substrate (8) can be cooled, an adjusting cover plate (6) is arranged on the cover plate (2), and an annular heat 11) And circular heat conductor (13) to and material annular magnetizer (12) and circular magnetizer (14) of adjusting the size of magnetic field, place substrate support (7) on adjusting apron (6), be used for placing substrate (8) in substrate support (7).
Alternatively, the annular heat conductor (11) and the circular heat conductor (13), and the annular magnetic conductor (12) and the circular magnetic conductor (14) may be made of a metal material having a composition of copper, aluminum, stainless steel, or nickel, or a ceramic material of polycrystalline diamond, silicon carbide, aluminum nitride, or sapphire.
Preferably, a plurality of annular concave pits (9) (10) with different depths are arranged at the positions with different radiuses at the bottom of the substrate holder (7), and a step-shaped air gap is formed between the substrate holder (7) and the adjusting cover plate (6) so as to further finely adjust the temperature and the magnetic field distribution of the substrate (8).
Alternatively, the magnets (17 and 18) disposed in the water-cooled chamber are divided into two pieces and installed in a symmetrical position with opposite magnetic poles, and the magnetic field in the central region forms a horizontal magnetic field while gradually changing to a vertical magnetic field away from the central region, thus drawing the radial diffusion of plasma.A top end surface (19) (20) of the magnet may be a flat surface or an inclined surface or other shapes.
Alternatively, unlike the previous solution, the magnets (17) (18) are combined into a magnet that is integrally mounted in a ring, so that the magnetic field in the central region forms a vertical magnetic field that can act to confine the plasma so that it is relatively uniform in the confined region, but this solution has the disadvantage of reducing the effective area of the deposition process.
The invention has the advantages that: the homogenization target of plasma uniformity and temperature uniformity is achieved through the combined design of two aspects of heat conduction and magnetic field guiding plasma, and the effective area of the MPCVD deposited diamond or graphene is expanded. Meanwhile, due to the guidance of plasma distribution, plasma can further wrap the surface of the substrate, and the deposition rate is greatly improved. Provides a way for the practicability of the diamond thin film device process.
The temperature distribution curve of the substrate simulated by the computer simulation and the distribution curve of the electron concentration show the characteristics of high center and radial roll-off. This patent is introduced in the substrate platform and is adjusted apron and substrate support, through the design of adjusting the apron, introduces the material that the thermal conductivity is different, and the central zone introduces the material that the thermal conductivity is higher, and introduces the material that the thermal conductivity is littleer in the region of keeping away from the center, like this in radial different regions, the thermal resistance of central zone is little, and the thermal resistance of marginal zone is big. Thus, the non-uniformity of plasma heating on the substrate is suppressed to a certain extent. The substrate is contacted with the substrate table through the substrate holder, and the uniformity of the temperature can be further finely adjusted through the design of air gaps with different thicknesses at the bottom of the substrate holder.
Drawings
FIG. 1 is a radial profile of gas temperature over a typical MPCVD chamber substrate of the prior art.
FIG. 2 is a radial profile of plasma over a typical MPCVD chamber substrate of the prior art.
FIG. 3 is a schematic diagram of the structure of an MPCVD substrate table with the magnetic field arrangement in a horizontal manner in accordance with the present invention.
FIG. 4 is a schematic diagram of the MPCVD substrate table magnet arrangement with the magnetic field arrangement in a horizontal manner according to the present invention.
FIG. 5 is a schematic diagram of the structure of an MPCVD substrate table with the magnetic field arrangement in a vertical fashion in accordance with the present invention.
FIG. 6 is a schematic diagram of an MPCVD substrate table magnet arrangement with the magnetic field arrangement in a vertical fashion in accordance with the present invention.
Detailed Description
Embodiments of the present invention are further described below with reference to the accompanying drawings.
The first embodiment is as follows: as shown in FIGS. 3 and 4, the substrate table is designed to be magnetic field in a horizontal manner. The whole substrate platform comprises a water cooling cavity wall 1, a cover plate 2 and a sealing ring 3, wherein the water cooling cavity is provided with a water inlet 4 and a water outlet 5. Magnets 17 and 18 are placed in the water-cooling cavity, are divided into 2 halves for a ring magnet and are installed in the water-cooling cavity in a position-symmetrical mode and in a magnetic pole opposite mode, and therefore a horizontal magnet arrangement is formed. An adjusting cover plate 6 is stacked on the cover plate 2, and heat conduction materials 11 and magnetic conduction materials 12 with different thicknesses are buried in the adjusting cover plate in a hidden mode according to the actual temperature distribution of plasma, so that the temperature distribution of the substrate 8 in the substrate support 7 is uniform. The bottom of the susceptor 7 is also provided with air gaps 9 and 10 designed to fine tune the actual temperature distribution.
Example two: as shown in fig. 5 and 6, the substrate stage is designed to be a vertical mode magnetic field. The whole substrate platform comprises a water cooling cavity wall 1, a cover plate 2 and a sealing ring 3, wherein the water cooling cavity is provided with a water inlet 4 and a water outlet 5. Magnets 17 and 18 are placed in the water-cooling chamber, and the magnets 17 and 18 are whole circular rings and form magnets in a vertical direction. An adjusting cover plate 6 is stacked on the cover plate 2, and heat conduction materials 11 and magnetic conduction materials 12 with different thicknesses are buried in the adjusting cover plate in a hidden mode according to the actual temperature distribution of plasma, so that the temperature distribution of the substrate 8 in the substrate support 7 is uniform. The bottom of the susceptor 7 is also provided with air gaps 9 and 10 designed to fine tune the actual temperature distribution.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (5)
1. A substrate table for diamond film microwave plasma chemical vapor deposition mainly comprises a water-cooling chamber, a substrate holder (7) and the like, wherein the water-cooling chamber comprises a water-cooling chamber wall (1), a cover plate (2) and a sealing ring (3), and is characterized in that magnets (17) and (18) are arranged in the water-cooling chamber and are symmetrically arranged by taking the central shaft of the water-cooling chamber as the center, the magnets (17) and (18) are fixed on the upper plane of the water-cooling chamber wall (1) in the water-cooling chamber, a water flow gap is reserved between the magnets and the cover plate (2) to facilitate cooling and adjusting the cover plate (6) and further cool a substrate (8), an adjusting cover plate (6) is arranged on the cover plate (2), an annular heat conductor (11) and a circular heat conductor (13) which are different in thickness and adjust heat conduction are arranged between the adjusting cover plate (6) and the cover plate (2), and an annular magnetic conductor (12, the adjusting cover plate (6) is provided with a substrate support (7), and a substrate (8) is arranged in the substrate support (7).
2. A substrate table for microwave plasma cvd of a diamond film according to claim 1, wherein the annular heat conductor (11) and the circular heat conductor (13), and the annular magnetic conductor (12) and the circular magnetic conductor (14) are made of a metal material consisting of cu, al, stainless steel or ni, or a ceramic material consisting of polycrystalline diamond, sic, aln or sapphire.
3. A substrate table for microwave plasma cvd of a diamond film according to claim 1, wherein a plurality of annular recesses (9) (10) with different depths are formed at different radii of the bottom of the substrate holder (7), and a stepped air gap is formed between the substrate holder (7) and the adjusting cover plate (6) to further fine-tune the temperature and magnetic field distribution of the substrate (8).
4. A substrate table for microwave plasma cvd of a diamond film according to claim 1, wherein the magnets (17) and (18) are divided into two pieces and arranged in a water-cooled chamber and installed in a position-symmetrical and opposite magnetic poles manner, the magnetic field in the central region forms a horizontal magnetic field, and the top end faces (19) and (20) of the magnets (17) and (18) may be flat or inclined or have other shapes.
5. A substrate table for microwave plasma cvd of diamond films as defined in claim 1, wherein the magnets (17) and (18) are formed as a ring-shaped unit and are symmetrically installed in the water-cooled chamber, the magnetic field in the central region forms a vertical magnetic field, and the top end surfaces (19) and (20) of the magnets (17) and (18) may be flat or inclined or have other shapes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911341286.9A CN113025998B (en) | 2019-12-24 | 2019-12-24 | Substrate table for diamond film microwave plasma chemical vapor deposition |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911341286.9A CN113025998B (en) | 2019-12-24 | 2019-12-24 | Substrate table for diamond film microwave plasma chemical vapor deposition |
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| CN113025998A true CN113025998A (en) | 2021-06-25 |
| CN113025998B CN113025998B (en) | 2023-09-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114016005A (en) * | 2021-10-28 | 2022-02-08 | 河北普莱斯曼金刚石科技有限公司 | Preparation method for co-growth of multiple single crystal diamond sheets |
| CN114164418A (en) * | 2021-11-29 | 2022-03-11 | 深圳优普莱等离子体技术有限公司 | Microwave plasma reaction cavity and equipment for chemical vapor deposition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06124942A (en) * | 1992-10-12 | 1994-05-06 | Fuji Electric Co Ltd | Manufacture of insulating film |
| CN1451781A (en) * | 2003-05-09 | 2003-10-29 | 华南师范大学 | Device and method for reinforcing organic metal chemical vapor deposition film |
| CN103114278A (en) * | 2013-02-06 | 2013-05-22 | 上海君威新能源装备有限公司 | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device |
| US20140227866A1 (en) * | 2013-02-13 | 2014-08-14 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
-
2019
- 2019-12-24 CN CN201911341286.9A patent/CN113025998B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06124942A (en) * | 1992-10-12 | 1994-05-06 | Fuji Electric Co Ltd | Manufacture of insulating film |
| CN1451781A (en) * | 2003-05-09 | 2003-10-29 | 华南师范大学 | Device and method for reinforcing organic metal chemical vapor deposition film |
| CN103114278A (en) * | 2013-02-06 | 2013-05-22 | 上海君威新能源装备有限公司 | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device |
| US20140227866A1 (en) * | 2013-02-13 | 2014-08-14 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114016005A (en) * | 2021-10-28 | 2022-02-08 | 河北普莱斯曼金刚石科技有限公司 | Preparation method for co-growth of multiple single crystal diamond sheets |
| CN114016005B (en) * | 2021-10-28 | 2023-10-13 | 河北普莱斯曼金刚石科技有限公司 | Preparation method for co-growing multiple single crystal diamond sheets |
| CN114164418A (en) * | 2021-11-29 | 2022-03-11 | 深圳优普莱等离子体技术有限公司 | Microwave plasma reaction cavity and equipment for chemical vapor deposition |
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