CN110565064A - novel diamond material growth method - Google Patents
novel diamond material growth method Download PDFInfo
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- CN110565064A CN110565064A CN201810566024.1A CN201810566024A CN110565064A CN 110565064 A CN110565064 A CN 110565064A CN 201810566024 A CN201810566024 A CN 201810566024A CN 110565064 A CN110565064 A CN 110565064A
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- substrate
- diamond
- growth method
- epitaxial
- epitaxial substrate
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/276—Diamond only using plasma jets
Abstract
The invention relates to a method for diamond epitaxy by utilizing plasma chemical vapor deposition. Covering a guide substrate on the epitaxial substrate, mutually overlapping the epitaxial substrate and the guide substrate, placing the epitaxial substrate and the guide substrate in the reaction gas plasma for growing diamond above the sample table, growing the epitaxial diamond material on the surface of the epitaxial substrate, and carrying out diamond epitaxial growth between the epitaxial substrate and the guide substrate. The arrangement of the small gap between the two substrates changes the distribution of plasma between the substrates, increases the density of the plasma in the gap, increases the plasma strength, realizes the rapid growth of the diamond material, can reduce the selectivity to an epitaxial substrate, and expands the range of the diamond coated substrate.
Description
Technical Field
The invention relates to the field of plasma growth of diamond films, in particular to a growth method of a high-speed diamond film.
Background
The diamond film has the advantages of high hardness, good thermal conductivity, small thermal expansion coefficient, high light transmittance, excellent electrical property, good dielectric property and the like, so that the diamond film has wide application prospect in the fields of infrared optical windows, high-performance heat-conducting substrates, high-power devices, high-frequency devices and the like.
Diamond is used in a wide variety of applications, for example: artware, cutting tools in industry. At present, there are two main methods for artificially synthesizing diamond, namely a high-temperature high-pressure method and a Chemical Vapor Deposition (CVD) method, wherein the CVD method is more and more widely applied to synthesizing diamond materials and depositing diamond films. The diamond material is synthesized based on the CVD method by introducing gases such as methane, hydrogen and the like in the plasma environment. The method and apparatus for generating plasma are different, and there are hot wire CVD apparatus using a high temperature wire for heating a wire, plasma CVD apparatus using a high voltage arc, and microwave-excited CVD apparatus. Although the method of generating microwaves varies, the growth principle of diamond is consistent, namely the growth of diamond material is achieved by using the different rates of etching graphite and diamond phases with active H atoms in a plasma state.
Current research is focused primarily on how to perform diamond growth on monolithic silicon or diamond substrates, and how to increase the growth rate.
Disclosure of Invention
The invention aims to provide a brand-new diamond film growth method, which realizes the rapid growth of diamond materials and can reduce the selectivity to an epitaxial substrate.
The technical scheme adopted by the invention is as follows: an epitaxial substrate and a guide substrate, which are stacked one on another, are placed in a reaction gas plasma for diamond growth, and diamond material growth is performed between the epitaxial substrate and the guide substrate.
Furthermore, the material of the guide substrate is a diamond substrate or other non-metallic material substrate with better thermal conductivity than the epitaxial substrate.
Further, the material of the epitaxial substrate may be diamond, or may be alumina ceramic or sapphire or silicon or other heterogeneous substrate materials.
Further, the plasma-forming reaction gas mainly contains methane and hydrogen.
Further, the plasma-forming reaction gas may contain other doping gases such as nitrogen, oxygen, diborane, etc., in addition to methane and hydrogen.
Further, the diamond growth process adopts microwave plasma chemical vapor deposition, or direct current hot cathode plasma chemical vapor deposition, or electron cyclotron resonance microwave plasma chemical vapor deposition, or other plasma chemical vapor deposition methods which can be used for growing diamond according to the generation method of the reaction gas plasma.
Further, when the epitaxial substrate and the guide substrate are stacked, they may be in contact with each other, or may be separated by a distance of 1mm or less in a partial or entire area.
Further, the number of stacked epitaxial substrates and guide substrates may be one layer or multiple layers.
Further, the stacking order of the epitaxial substrate and the guide substrate is not limited, and the positions of the epitaxial substrate and the guide substrate can be interchanged, for example, the upper position and the lower position or the left position and the right position can be interchanged.
Furthermore, the stacking direction of the epitaxial substrate and the guide substrate is not limited, and the epitaxial substrate and the guide substrate can be stacked in a vertical angle, a parallel angle or any other angle direction with the sample stage.
The invention provides a diamond growth method, which uses more than 2 substrates to grow diamond, and the growth conditions between gaps are different due to the difference of local environments between the substrates.
Drawings
FIG. 1 shows XRD detection results of a diamond film grown under certain process conditions when a guide substrate is made of diamond and an epitaxial substrate is made of alumina ceramic in a microwave plasma CVD apparatus;
fig. 2 is a schematic view of example 1 of a diamond material growth method proposed by the present invention;
FIG. 3 is a schematic view of example 2 of a diamond material growth method according to the present invention;
FIG. 4 is a schematic view of example 3 of a diamond material growth method proposed by the present invention;
fig. 5 is a schematic diagram of a diamond material growth method embodiment 4 provided by the invention.
Detailed Description
Example 1:
As shown in fig. 2, an epitaxial substrate 13 and a guide substrate 12 are placed in a reaction gas plasma for diamond growth, which are superposed on each other, and the two substrates are brought into contact with each other, and diamond material growth is performed between the epitaxial substrate and the guide substrate.
Example 2:
As shown in fig. 3, an epitaxial substrate 13 and a guide substrate 12, which are stacked on each other with a certain distance therebetween, are placed in a reaction gas plasma for diamond growth, and diamond material growth is performed between the epitaxial substrate and the guide substrate.
example 3:
As shown in fig. 4, an epitaxial substrate 13 and a guide substrate 12 are placed in a reaction gas plasma for growing diamond, three substrates are stacked together and two adjacent substrates are in contact with each other, from bottom to top, the guide substrate 12, the epitaxial substrate 13, and the guide substrate 12, respectively. This way a double-sided growth of the epitaxial substrate can be achieved.
Example 4:
as shown in fig. 5, an epitaxial substrate 13 and a guide substrate 12 are laterally stacked in a reaction gas plasma for diamond growth, the two substrates are in contact with each other, and diamond material growth is performed between the epitaxial substrate and the guide substrate.
the novel diamond growth method provided by the invention can greatly improve the deposition rate of the diamond film layer, reduce the selectivity to the epitaxial substrate and expand the range of the diamond film-coated substrate. Is not only suitable for the growth of the monocrystalline diamond film, but also suitable for the growth of the doped diamond film.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (10)
1. A diamond growth method is characterized in that an epitaxial substrate (13) and a guide substrate (12) which are mutually overlapped are placed in a reaction gas plasma (11) in a process of growing diamond, and diamond material growth is carried out between the epitaxial substrate (13) and the guide substrate (12).
2. A diamond growth method according to claim 1, characterised in that the guiding substrate (12) is a diamond substrate or other non-metallic substrate with better thermal conductivity than the epitaxial substrate (13).
3. A diamond growth method according to claim 1, characterised in that the material of the epitaxial substrate (13) may be diamond, or alumina ceramic or sapphire or silicon or other foreign substrate material.
4. A diamond growth method according to claim 1, characterized in that the reactive gas plasma (11) composition comprises methane and hydrogen.
5. A diamond growth method according to claim 4, characterized in that said reactive gas plasma (11) contains, in addition to methane and hydrogen, various doping gases such as nitrogen, oxygen, diborane, etc.
6. a diamond growth method according to claim 1, characterized in that said process for growing diamond uses microwave plasma chemical vapor deposition, or direct current hot cathode plasma chemical vapor deposition, or electron cyclotron resonance microwave plasma chemical vapor deposition, or other plasma chemical vapor deposition methods that can be used for growing diamond, depending on the method of generation of the reactive gas plasma (11).
7. A diamond growth method according to claim 1, characterised in that the epitaxial substrate (13) and the guiding substrate (12) may be in contact or may be separated by a distance, in part or in whole, within 1 mm.
8. A diamond growth method according to claim 1, characterized in that the epitaxial substrate (13) and the guiding substrate (12) are superimposed on each other, either as a single layer or as a plurality of layers.
9. A diamond growth method according to claim 1, characterized in that the position of the epitaxial substrate (13) and the orientation substrate (12) superimposed on each other can be exchanged with each other.
10. A diamond growth method according to claim 1, characterised in that the mutually superimposed epitaxial substrate (13) and guide substrate (12) may be superimposed at right angles, parallel angles or at any other angle to the sample stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810566024.1A CN110565064A (en) | 2018-06-05 | 2018-06-05 | novel diamond material growth method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810566024.1A CN110565064A (en) | 2018-06-05 | 2018-06-05 | novel diamond material growth method |
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| CN110565064A true CN110565064A (en) | 2019-12-13 |
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| CN201810566024.1A Pending CN110565064A (en) | 2018-06-05 | 2018-06-05 | novel diamond material growth method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030133A (en) * | 2020-11-06 | 2020-12-04 | 苏州香榭轩表面工程技术咨询有限公司 | Diamond and preparation method and application thereof |
| CN115125614A (en) * | 2022-07-21 | 2022-09-30 | 生命珍宝有限公司 | Technology for recycling carbon source gasified by hairs in process of growing diamond by MPCVD method |
-
2018
- 2018-06-05 CN CN201810566024.1A patent/CN110565064A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030133A (en) * | 2020-11-06 | 2020-12-04 | 苏州香榭轩表面工程技术咨询有限公司 | Diamond and preparation method and application thereof |
| CN115125614A (en) * | 2022-07-21 | 2022-09-30 | 生命珍宝有限公司 | Technology for recycling carbon source gasified by hairs in process of growing diamond by MPCVD method |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20210716 Address after: 570100 No. 266, Nanhai Avenue, Haikou City, Xiuying District, Haikou City, Hainan Province Applicant after: Hainan Zhongyuan Carbon Technology Co.,Ltd. Address before: 430000 room F101, Wuhan National photoelectric laboratory, No. 1037 Luoyu Road, Hongshan District, Wuchang, Wuhan, Hubei Province Applicant before: Gan Zhiyin |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191213 |
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| RJ01 | Rejection of invention patent application after publication |