CN1451781A - Device and method for reinforcing organic metal chemical vapor deposition film - Google Patents
Device and method for reinforcing organic metal chemical vapor deposition film Download PDFInfo
- Publication number
- CN1451781A CN1451781A CN 03126525 CN03126525A CN1451781A CN 1451781 A CN1451781 A CN 1451781A CN 03126525 CN03126525 CN 03126525 CN 03126525 A CN03126525 A CN 03126525A CN 1451781 A CN1451781 A CN 1451781A
- Authority
- CN
- China
- Prior art keywords
- film
- sample table
- down chamber
- putting
- tracheae
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
An apparatus for reinforcing the chemically gas-phase deposited film of organic metal is composed of microwave generator, waveguide tube, magnetic field generator, coupling window, resonance cavity, film depositing chamber, specimen table and its heater and bias unit, vacuumizing unit, gas distributor, working gas tube, reacting gas tube and visual window. A process for depositing film includes installing specimen, heating, regulating vacuum level, distributing gas, regulating position and bias of specimen table, discharging, depositing film and sampling. Its advantages are low cost and temp, and high film quality.
Description
(1) technical field
The present invention relates to a kind of device that strengthens the Metalorganic chemical vapor deposition film, concretely, it is a kind of device that adopts microwave electron cyclotron resonance plasma to strengthen the Metalorganic chemical vapor deposition film (being called for short ECR-PEMOCVD), also relate to the method that adopts this device to strengthen the Metalorganic chemical vapor deposition film simultaneously, belong to Semiconductor Optoeletronic Materials production unit and technology.
(2) technical background
Because the development of semiconductor planar technology prepares high-quality SEMICONDUCTING THIN FILM TECHNOLOGY and becomes more and more important, Metalorganic chemical vapor deposition method (MOCVD) has obtained using widely at the deposited semiconductor thin-film material.But there is depositing temperature too high ('s more than 1000 ℃) shortcoming in general mocvd method, like this temperature tolerance of equipment is required highly, and it is unfavorable to bring for the design of equipment, and high temperature also brings the thermal mismatching of substrate and extension, and is influential to the preparation high-quality thin film.Therefore, how reducing growth temperature is present a great problem.In the production technique of thin-film material, be badly in need of the equipment that a kind of energy low-temperature epitaxy high-quality thin film and technology are simple relatively, cost is low.
At present, existing people's applied microwave electron cyclotron resonace (ECR) carries out material surface processing and inorganic thin film deposition.So-called microwave electron cyclotron resonance (ECR) method, be meant in microwave electric field and orthogonal magnetic field, on the plane of vertical magnetic field, be subjected to lorentz's force to make to be used as the electronics of cyclotron motion, when the processional frequency of microwave frequency and electronics equates, electron resonance absorbs the energy of the energy of microwave greater than the ion acquisition, therefore electronics has than ion and the much bigger average energy of neutral particle in ecr plasma, even make near under the normal temperature, as long as the energy that electronics obtains between twice collision, just be equal to or greater than the ionization energy of gas particle, thereby electron energy just is enough to make the chemical bond rupture of gas molecule to form active group, forms high-density, highly active unbound electron, neutral particle, ion is formed and integral body is electroneutral low-temperature plasma.And because discharge gas pressure is far below normal atmosphere (about 10
-2～10
-4Standard atmospheric pressure), electronics easily quickens to obtain energy under External Electrical Field.High-density, high-energy electron cause the generation of a large amount of active groups to the result of gas molecule collision, the high density plasma active group can be under low temperature of reaction (normal temperature～700 ℃), vapor deposition reaction takes place, film former on substrate, the low temperature depositing of realization palpus high temperature synthetic materials.Therefore, according to identical principle, adopt microwave electron cyclotron resonance (ECR) plasma body to strengthen the Metalorganic chemical vapor deposition film and just might succeed.
(3) Fa Ming content
The object of the present invention is to provide a kind of enhancing Metalorganic chemical vapor deposition membrane unit and method thereof, it can overcome the problems referred to above of existing apparatus and method existence, can under lower temperature, grow high-quality film, advantage such as its device has simplicity of design, cost is lower and easy to use.
The present invention designs according to microwave electron cyclotron resonance (ECR) ratio juris.According to the present invention, strengthen the chemical vapour deposition film device and the source takes place by microwave magnetron, waveguide, the magnetic field production part, coupling window, resonator, film putting-down chamber, sample table, the sample table heater block, the sample table biasing member, vacuum unit, air distributing device, working gas is given tracheae, reactant gases connects and composes for tracheae and visual window jointly, its interconnected relationship is: waveguide, resonator, film putting-down chamber connects successively, between waveguide and the resonator coupling window is installed, resonator, film putting-down chamber is connected to form the cavity of a hollow, microwave magnetron generation source is inserted in the waveguide, resonator is equipped with the magnetic field production part outward, working gas links to each other for tracheae to tracheae and reactant gases with air distributing device, working gas is attached on the resonator wall to tracheae, reactant gases is installed on the film putting-down chamber wall to tracheae, vacuum unit links to each other with film putting-down chamber, sample table is suspended in the film putting-down chamber by the mounting bracket that is installed on the film putting-down chamber end, and interconnects with sample table heater block and sample table biasing member.
In said apparatus, the magnetic field production part is made of with corresponding magnetic field power supply and two protective guards and two mounting brackets etc. two groups of hollow magneticfield coils that are electrically connected mutually.Two groups of hollow magneticfield coils play cooling effect simultaneously as built-in water-cooled tube, and magnetic field power supply is the direct supply that can regulate continuously.Protective guard is made by copper product or other metallic substance, plays the effect of protection magneticfield coil.A protective guard is fixed on the mounting bracket; mounting bracket is supported by roller; have corresponding guide path on the resonator outer wall, roller is placed in the guide path, regulates the interval and the position of magneticfield coil outside resonator of two groups of magneticfield coils by the position of adjusting mounting bracket.Just can change magnetic field size, magnetic field configuration and direction in the film putting-down chamber by changing interval between magnetizing current or the two groups of magneticfield coils and the position of magneticfield coil outside resonator.Thereby influence the spatial distribution of film putting-down chamber plasma density, space potential and electronic temp, change the plasma characteristics of film putting-down chamber.
Described coupling window can be quartz or stupalith, and effect is that couple microwave energy is in resonator.The mounting bracket of sample table is a hollow structure, and mounting bracket generally adopts stainless material or copper material, and silk has outside screw, can change the position of sample table in film putting-down chamber by the screw thread spinning in and out.The sample table heater block plays heated sample, is electrically connected by heating tube and corresponding heating power supply to constitute.The sample table biasing member works to change near the plasma characteristics (as plasma density, plasma space current potential, ion energy etc.) of sample table, be electrically connected by bias electrode and corresponding grid bias power supply and constitute, heating tube and bias electrode are arranged in the hollow tube of tubulose mounting bracket, and are connected with sample table.Vacuum unit can be straight horizontal vacuum device or other forms of vacuum unit, is used for obtaining high vacuum.Working gas is used for to film putting-down chamber transportation work gas and reactant gases for tracheae, reactant gases to tracheae.Place and take out sample by the visual window in the film putting-down chamber, and can be by the situation of this visual window observation sample growth.
The method that adopts apparatus of the present invention to strengthen the Metalorganic chemical vapor deposition film comprises the steps:
(1) will treat that by visual window the substrate of heavy film is placed on the sample table.
(2) by the sample table heater block sample table is heated to temperature required (normal temperature～700 ℃);
(3) control the vacuum tightness of film putting-down chamber in normal pressure～10 by the adjustments of gas air distributing device
-4Between the handkerchief;
(4) feed working gas and reactant gases to tracheae for tracheae, reactant gases by working gas respectively by air distributing device, the flow control of gas is 10～50sccm (a standard ml/min), and the distribution ratio of working gas and reactant gases (working gas/reactant gases) is 0.1～0.9:
(5) regulate sample table by the sample table grid bias power supply and be biased between 0～1000V, regulate the position of sample table in film putting-down chamber by the spinning in and out of mounting bracket screw thread, the distance that makes sample table and film putting-down chamber end is 20cm～40cm;
(6) regulate magnetizing current between 1A～220A, and regulate the microwave power that the source takes place microwave magnetron between 1W～1100W, producing density at film putting-down chamber is 10
10～10
12/ cm
3Plasma body;
(7) the heavy film time of film thickness control as required, treat that heavy film is finished after, powered-down, air distributing device and vacuum unit take out sample from film putting-down chamber.Generally speaking, the heavy film time is long more, deposited film is thick more, and (＜100nm) depositing time is within 2 minutes, and (100nm～heavy film time 10um) is then between 2 minutes～2 hours for submicron, micron film for nano thin-film.
In aforesaid method, the preferable range of film putting-down chamber vacuum tightness is 2 * 10
-2～8 * 10
-3Handkerchief; The preferable range of microwave power is 400～800W; The preferable range of magnetizing current is 140～165A.Under optimum condition, heavy film speed reaches 50～700nm/ minute.
The working gas of this device can be selected nitrogen N
2, argon Ar, helium Hi, hydrogen H
2, oxygen O
2Deng, reactant gases can be selected zinc methide DMZn, trimethyl-gallium TMGa, trimethyl-stibine TMSb, trimethyl indium TMIn, triethyl aluminum TEAl, silane SiH
4Etc. organometallic sources, select working gas and reactant gases according to the component of wanting deposit film.
The present invention compares with prior art has following advantage or effect: (1) adopts ecr plasma auxiliary, make full use of the directed transport and the constraint of magnetic field article on plasma body, and the ion bombardment of ecr plasma can advantage low, that plasma density is big come to obtain a large amount of plasma body living radicals near sample table.Make under relative low temperature (normal temperature～700 ℃) to generate high-quality film at sample surfaces generation physical-chemical reaction, overcome that film Yin Gaowen in process of growth causes the lattice thermal mismatching and the lattice imperfection and the slight crack that produce have guaranteed the growth of high-quality thin film.(2) present organometallic chemistry method growing film temperature height, complex process, shortcoming that cost is high have been overcome.(3) in the heavy membrane process of microwave ECR plasma, the microwave power of this equipment, sample table bias voltage, Heating temperature is adjustable, especially the adjustability of film putting-down chamber magneticstrength, can just can change magnetic field big or small and magnetic field and direction in the film putting-down chamber neatly by changing interval between magnetizing current or the two groups of magneticfield coils and the position of magneticfield coil resonator outside, thereby influence the spatial distribution of plasma density, space potential and electronic temp, change the plasma characteristics of film putting-down chamber.Substantially improve the controllability of technology, helped obtaining best film growth condition.The inventive method can replace original Metalorganic chemical vapor deposition method (MOCVD technology).
(4) description of drawings
Fig. 1 is the structural representation of apparatus of the present invention.
(5) concrete embodiment
Show by Fig. 1, source 1 takes place by microwave magnetron in apparatus of the present invention, waveguide 2, the magnetic field production part, coupling window 4, resonator 10, film putting-down chamber 11, sample table 12, the sample table heater block, the sample table biasing member, vacuum unit 19, air distributing device 7, working gas connects and composes for tracheae 9 for tracheae 8 and reactant gases jointly, its interconnected relationship is: waveguide 2, resonator 10, film putting-down chamber 11 connects successively, between waveguide 2 and the resonator 10 coupling window 4 is installed, source 1 takes place and inserts in the waveguide 2 in microwave magnetron, the resonator 10 outer magnetic field production parts that are equipped with, working gas links to each other for tracheae 9 for tracheae 8 and reactant gases with air distributing device 7, working gas is attached on resonator 10 walls for tracheae 8, reactant gases is attached on film putting-down chamber 11 walls to tracheae, vacuum unit 19 links to each other with film putting-down chamber 11, sample table 12 is installed on film putting-down chamber 11 central axis, and interconnects with sample table heater block and sample table biasing member.
In said apparatus; the magnetic field production part is electrically connected by two groups of hollow ring-like magnetic field copper coils 5 and corresponding magnetic field power supply 6 and constitutes; with ring-like protective guard 3 protections; protective guard 3 is enclosed within outside the resonator; make by copper product or other metallic substance; as the part of magnetic field production part, play the effect of protection magneticfield coil.The interval of two groups of magneticfield coils is adjustable, and the position of magneticfield coil outside resonator is adjustable.Hollow magneticfield coil 5 is positioned in the protective guard, simultaneously as water-cooled tube, and the direct supply of magnetic field power supply 6 for regulating continuously.Sample table 12 is suspended in the film putting-down chamber 11 by a piped mounting bracket 14, sample table support 14 general stainless material or the copper materials of adopting; The sample table heater block plays heated sample, is electrically connected by heating tube 18 and corresponding heating power supply 16 to constitute; The sample table biasing member works to change near the plasma characteristics (as plasma density, plasma space current potential, ion energy etc.) of sample table, be electrically connected by bias electrode 17 and grid bias power supply 15 and constitute, heating tube 18 and bias electrode 17 are arranged in the hollow tube of tubulose mounting bracket 14, and are connected with sample table 12.Vacuum unit 19 has been the effect of taking out film putting-down chamber and resonator vacuum.Working gas gives tracheae 9 for tracheae 8, reactant gases, is used for respectively to film putting-down chamber transportation work gas and reactant gases.
This device main body structure can realize by following manner, but is not limited thereto, and other and the same or analogous technical scheme of flesh and blood of the present invention all belong to protection scope of the present invention:
(1) cavity part: thickness be 10mm (± 5mm), be of a size of φ 370 (± 30mm) * 500mm (± 50mm) film putting-down chamber and be of a size of φ 160 (± 40mm) * 210 (± 50mm) resonator of mm uses stainless material to be welded to each other to be linked to be.Working gas is welded into resonator and film putting-down chamber respectively by thin copper pipe for tracheae for tracheae and reactant gases.The bleeding point of the vacuum pump of vacuum unit is connected on film putting-down chamber, the bleeding point diameter be 200mm (± 50mm).Visual window is at film putting-down chamber side forward, be of a size of φ 250mm (± 50mm), in be silica glass.Sample table be positioned at the film putting-down chamber central shaft to, be of a size of φ 150mm (± 20mm), be generally brass work, (± 10mm) stainless steel mounting bracket supports with being of a size of φ 50mm for its, be hollow structure, be built-in with heating tube and the bias electrode of floating, this support reaches in the film putting-down chamber and (± 20mm) flange is locked, and flange is fixed with nut, and mounting bracket partly is equipped with vaccum seal ring at flange inner wall with being of a size of φ 150mm.The sample table bias electrode adopts metallic copper, be of a size of φ 2mm (± 1mm).This bias electrode is a mounting structure, the contact of discord sample table, and its front end adopts insulating ceramic ring and sample table insulation, the insulation of electrode external application insulating ceramic.The sample table heating tube is that (± 2mm) stainless steel thermal resistance formula heating tube is looped around on the diapire of sample table chamber, and receives in the film putting-down chamber through flange for general φ 10mm.
(2) microwave part: the 2M1 67B-M10 type microwave magnetron source 1 of adopting Japanese Panasonic company to produce can produce the 2450MHz microwave.Waveguide 2 adopts general BJ22B type rectangular waveguide, and is equipped with the water load annular device to absorb the microwave energy that reflects.
(3) magnetic field part: the magnetic field production part is made of two groups of hollow magneticfield coils that are electrically connected mutually and corresponding magnetic field power supply and two protective guards and mounting bracket etc.Magneticfield coil is ring-like, and totally two groups, (± 5mm) hollow structure adopts copper product or other metallic substance to make to φ 15mm.Can in resonator, produce the divergence form high-intensity magnetic field of 0～0.3 tesla.Every group of magneticfield coil all is placed in the ring-like protective guard; internal diameter be φ 180mm (± 20mm), external diameter be φ 250mm (± 20mm), length is that (± 20mm) ring-like protective guard is enclosed within outside the resonator 180mm; and (± 5mm) hollow copper conductor is received magnetic field power supply with copper cable and is electrically connected to draw φ 15mm from the magnetic field annular coil.This hollow copper conductor is simultaneously as the built-in water-cooled tube of coil magnetic field.Water-cooled tube is designed to two and advances scene 2, and every group of magneticfield coil is one-in-and-one-out to increase cooling water flow, helps the cooling to ring-like magneticfield coil.A protective guard is fixed on the mounting bracket; mounting bracket is supported by roller; have corresponding guide path on the resonator outer wall, roller is placed in the guide path, regulates the interval and the position of magneticfield coil outside resonator of two groups of magneticfield coils by the position of adjusting mounting bracket.Just can change magnetic field size, magnetic field configuration and direction in the film putting-down chamber by changing interval between magnetizing current or the two groups of magneticfield coils and the position of magneticfield coil outside resonator.
(3) supplying unit: the output of magnetic field power supply by φ 10mm (± 2mm) copper cable is welded to the hollow copper conductor two ends that magneticfield coil is drawn, power supply output-index: voltage: 0～8V, galvanic current: 0～220A can be at the high-intensity magnetic field that axially produces 0～0.3 tesla.The power supply output-index in source takes place in microwave magnetron: galvanic current 0～250mA, voltage 0～4600V.Sample table heating power supply output changes according to the temperature of need heating, and electric current can be regulated at 0～10A, and Heating temperature is between normal temperature～800 ℃.The sample table grid bias power supply has two kinds of rf bias and direct-current biasinges, can decide according to the electroconductibility of film.Generally speaking, conductive film add direct-current biasing (0～400V, 0～2.5A), dielectric film adds rf bias (13.56MHz, 0～1000).
Claims (9)
1, strengthen the device of Metalorganic chemical vapor deposition film, it is characterized in that: the source takes place by microwave magnetron in it, waveguide, the magnetic field production part, coupling window, resonator, film putting-down chamber, sample table, the sample table heater block, the sample table biasing member, vacuum unit, air distributing device, working gas is given tracheae, reactant gases connects and composes for tracheae and visual window jointly, its interconnected relationship is: waveguide, resonator, film putting-down chamber connects successively, between waveguide and the resonator coupling window is installed, resonator, film putting-down chamber is connected to form the cavity of a hollow, microwave magnetron generation source is inserted in the waveguide, resonator is equipped with the magnetic field production part outward, working gas links to each other for tracheae to tracheae and reactant gases with air distributing device, working gas is attached on the resonator wall to tracheae, reactant gases is installed on the film putting-down chamber wall to tracheae, vacuum unit links to each other with film putting-down chamber, sample table is suspended in the film putting-down chamber by the mounting bracket that is installed on the film putting-down chamber end, and interconnects with sample table heater block and sample table biasing member.
2, device as claimed in claim 1 is characterized in that: described magnetic field production part is made of two groups of magneticfield coils that are electrically connected mutually and magnetic field power supply and two protective guards and two mounting brackets.
3, device as claimed in claim 2 is characterized in that: the material of described magneticfield coil is a hollow structure, can be simultaneously as built-in water-cooled tube; Described magnetic field power supply is the direct supply that can regulate continuously; Protective guard is fixed on the mounting bracket, and mounting bracket is supported by roller, can slide vertically.
4, device as claimed in claim 3 is characterized in that: described magneticfield coil adopts hollow copper conductor to make; Protective guard adopts copper product or other metallic substance to make.
5, device as claimed in claim 1 is characterized in that: described sample table mounting bracket is a hollow structure, and silk has outside screw, can change the position of sample table in film putting-down chamber by the screw thread spinning in and out.
6, device as claimed in claim 5 is characterized in that: described sample table mounting bracket adopts stainless material or copper material.
7, as claim 1 or 2 or 5 described devices, it is characterized in that: described sample table heater block is electrically connected by heating tube and corresponding heating power supply and constitutes, the sample table biasing member is electrically connected by bias electrode and corresponding grid bias power supply and constitutes, heating tube and bias electrode are positioned at the hollow tube of sample table mounting bracket, and are connected with sample table.
8, install the method that strengthens the Metalorganic chemical vapor deposition film according to claim 1, it is characterized in that comprising the steps:
(1) will treat that by visual window the substrate of heavy film is placed on the sample table;
(2) by the sample table heater block sample table is heated to normal temperature～700 ℃;
(3) control the vacuum tightness of film putting-down chamber in normal pressure～10 by the adjustments of gas air distributing device
-4Between the handkerchief;
(4) feed working gas and reactant gases to tracheae for tracheae, reactant gases by working gas respectively by air distributing device, the flow control of gas is 10～50sccm, and the distribution ratio of working gas and reactant gases (working gas/reactant gases) is 0.1～0.9;
(5) regulate sample table by the sample table grid bias power supply and be biased between 0～1000V, regulate the position of sample table in film putting-down chamber by mounting bracket, the distance that makes sample table and film putting-down chamber end is 20cm～40cm;
(6) regulate magnetizing current between 1A～220A, and regulate the microwave power that the source takes place microwave magnetron between 1W～1100W, producing density at film putting-down chamber is 10
10～10
12/ cm
3Plasma body;
(7) the heavy film time of film thickness control as required, treat that heavy film is finished after, powered-down, air distributing device and vacuum unit take out sample from film putting-down chamber.
9, method as claimed in claim 8 is characterized in that: the scope of control film putting-down chamber vacuum tightness is 2 * 10
-2～8 * 10
-3Handkerchief, the scope of controlled microwave power are 400～800W, and the scope of control magnetizing current is 140～165A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03126525 CN1291063C (en) | 2003-05-09 | 2003-05-09 | Device and method for reinforcing organic metal chemical vapor deposition film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03126525 CN1291063C (en) | 2003-05-09 | 2003-05-09 | Device and method for reinforcing organic metal chemical vapor deposition film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1451781A true CN1451781A (en) | 2003-10-29 |
| CN1291063C CN1291063C (en) | 2006-12-20 |
Family
ID=29222892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03126525 Expired - Fee Related CN1291063C (en) | 2003-05-09 | 2003-05-09 | Device and method for reinforcing organic metal chemical vapor deposition film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1291063C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100362128C (en) * | 2005-11-07 | 2008-01-16 | 东华大学 | Method of atmospheric pressure plane discharge chemical gaseous phase depositing nano-particular film and its device |
| CN101177775B (en) * | 2006-11-10 | 2010-09-15 | 中国科学院物理研究所 | Vacuum deposition film and film heat treating plant having applied magnetic field |
| CN102353255A (en) * | 2011-08-05 | 2012-02-15 | 湖南省中晟热能科技有限公司 | Microwave high-temperature pushed slab kiln |
| CN102869182A (en) * | 2012-09-12 | 2013-01-09 | 清华大学 | Large-volume microwave plasma generating device based on coupling window radiation |
| CN103926260A (en) * | 2014-03-31 | 2014-07-16 | 北京工业大学 | ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) device for ion irradiation experiment |
| WO2016033972A1 (en) * | 2014-09-01 | 2016-03-10 | 沈阳拓荆科技有限公司 | Cavity air flow direction variable structure |
| CN105420683A (en) * | 2015-12-31 | 2016-03-23 | 佛山市思博睿科技有限公司 | Device for preparing nano-multilayer film on basis of low-pressure plasma chemical vapour deposition |
| CN111763926A (en) * | 2020-07-02 | 2020-10-13 | 成都蓝玛尚科技有限公司 | Material synthesis system based on high-temperature normal-pressure microwave plasma |
| CN113025998A (en) * | 2019-12-24 | 2021-06-25 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
-
2003
- 2003-05-09 CN CN 03126525 patent/CN1291063C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100362128C (en) * | 2005-11-07 | 2008-01-16 | 东华大学 | Method of atmospheric pressure plane discharge chemical gaseous phase depositing nano-particular film and its device |
| CN101177775B (en) * | 2006-11-10 | 2010-09-15 | 中国科学院物理研究所 | Vacuum deposition film and film heat treating plant having applied magnetic field |
| CN102353255A (en) * | 2011-08-05 | 2012-02-15 | 湖南省中晟热能科技有限公司 | Microwave high-temperature pushed slab kiln |
| CN102353255B (en) * | 2011-08-05 | 2013-07-17 | 湖南省中晟热能科技有限公司 | Microwave high-temperature pushed slab kiln |
| CN102869182A (en) * | 2012-09-12 | 2013-01-09 | 清华大学 | Large-volume microwave plasma generating device based on coupling window radiation |
| CN103926260A (en) * | 2014-03-31 | 2014-07-16 | 北京工业大学 | ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) device for ion irradiation experiment |
| WO2016033972A1 (en) * | 2014-09-01 | 2016-03-10 | 沈阳拓荆科技有限公司 | Cavity air flow direction variable structure |
| CN105420683A (en) * | 2015-12-31 | 2016-03-23 | 佛山市思博睿科技有限公司 | Device for preparing nano-multilayer film on basis of low-pressure plasma chemical vapour deposition |
| CN105420683B (en) * | 2015-12-31 | 2018-08-31 | 佛山市思博睿科技有限公司 | The device of nano-multilayer film is prepared based on low-voltage plasma chemical vapor deposition |
| CN113025998A (en) * | 2019-12-24 | 2021-06-25 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
| CN113025998B (en) * | 2019-12-24 | 2023-09-01 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
| CN111763926A (en) * | 2020-07-02 | 2020-10-13 | 成都蓝玛尚科技有限公司 | Material synthesis system based on high-temperature normal-pressure microwave plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1291063C (en) | 2006-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5521351A (en) | Method and apparatus for plasma surface treatment of the interior of hollow forms | |
| CN1248289C (en) | Inductive coupling type plasma device | |
| TWI618456B (en) | Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes | |
| JP7206286B2 (en) | Linearized Energy Radio Frequency Plasma Ion Source, Thin Film Deposition Apparatus, and Plasma Ion Beam Generation Method | |
| US20100189921A1 (en) | Plasma generating method, plasma generating apparatus, and plasma processing apparatus | |
| CN1291063C (en) | Device and method for reinforcing organic metal chemical vapor deposition film | |
| KR101353348B1 (en) | Nanoparticle Synthesizing Apparatus and Nanoparticle Synthesizing Method | |
| KR20090084915A (en) | Method and apparatus for forming a film by deposition from a plasma | |
| KR100325500B1 (en) | Method of producing thin semiconductor film and apparatus therefor | |
| CN103155103A (en) | Plasma treatment device | |
| CN103628048B (en) | A kind of microwave plasma CVD device | |
| KR100399019B1 (en) | Chemical Vapor Deposition System at Ambient Temperature And The Preparation Method for Metal Composite Film Using The Same | |
| TW202007781A (en) | Plasma spray systems and methods | |
| EP2080425B1 (en) | Device for forming a film by deposition from a plasma | |
| JP2003073814A (en) | Film forming apparatus | |
| US20130104803A1 (en) | Thin film forming apparatus | |
| US8931433B2 (en) | Plasma processing apparatus | |
| CN203602711U (en) | Microwave plasma chemical vapor deposition device | |
| KR20180000721A (en) | A toroidal plasma processing apparatus having a shaped workpiece support | |
| US9190249B2 (en) | Hollow cathode system, device and method for the plasma-assisted treatment of substrates | |
| JP5563502B2 (en) | Thin film forming equipment | |
| KR20110036932A (en) | Deposition apparatus for improving the uniformity of material processed over a substrate and method of using the apparatus | |
| CN1556245A (en) | Hot wire auxiliary microwave electron rotating resonance chamical gas phase settling method and device | |
| Karmakar et al. | Conceptual design of a double antenna fed ECR plasma enhanced nano-film deposition system | |
| JPH0660408B2 (en) | Thin film manufacturing method and apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Chauleong Enterprise (Group) Ltd. Assignor: South China Normal University Contract fulfillment period: 2007.4.12 to 2012.4.11 contract change Contract record no.: 2009440000225 Denomination of invention: Device and method for reinforcing organic metal chemical vapor deposition film Granted publication date: 20061220 License type: Exclusive license Record date: 2009.4.2 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.4.12 TO 2012.4.11; CHANGE OF CONTRACT Name of requester: DONGGUAN ZHOULIANG COMMUNICATION SCIENCE CO., LTD. Effective date: 20090402 |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061220 Termination date: 20120509 |