CN112805814A - 电力用半导体装置及其制造方法 - Google Patents

电力用半导体装置及其制造方法 Download PDF

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Publication number
CN112805814A
CN112805814A CN201880098402.6A CN201880098402A CN112805814A CN 112805814 A CN112805814 A CN 112805814A CN 201880098402 A CN201880098402 A CN 201880098402A CN 112805814 A CN112805814 A CN 112805814A
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Prior art keywords
gate
power semiconductor
resin
semiconductor device
lead frame
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CN201880098402.6A
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Inventor
田中佐武郎
加藤政纪
田原润
岛野友明
梶原孝信
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN112805814A publication Critical patent/CN112805814A/zh
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Abstract

一种电力用半导体装置(1)，在树脂封装件(6)的短边方向侧面(62)具有第一浇口断裂痕迹(63)和第二浇口断裂痕迹(64)。对树脂封装件(6)成型的成型模具(10)的上侧浇口(11a)和下侧浇口(11b)配置于树脂封装件(6)的短边方向侧面(62)，多个型腔(12)配置成使相邻的树脂封装件(6)的长边方向侧面(61)面对。由此，增加了单次能成型的电力用半导体装置(1)的数量，提高了生产率。

Description

电力用半导体装置及其制造方法
技术领域
本申请涉及一种电力用半导体装置及其制造方法。
背景技术
作为电力用半导体装置的结构之一，存在一种将能切换的功率半导体芯片安装于成型为配线图案状的引线框架，并通过树脂封装件(模制树脂)封闭的结构。在上述制造工序中，通过传递成型法等并利用模制树脂将装设有功率半导体芯片等的引线框架封闭，在刚将电力用半导体装置从成型模具中取出之后，实施将残留在成型模具的浇口内的模制树脂与电力用半导体装置切断的浇口断裂(日文：ゲートブレイク)。因此，在电力用半导体装置的侧面残留有浇口断裂痕迹。
在上述树脂封闭工序中，经由浇口注入成型模具的熔融树脂在粘度变高且润湿性变差的状态下流入型腔的最终填充部位。因此，在最终填充部位处容易产生因空气卷入而导致的空洞或填充不良等缺陷，成为成品率下降的原因。此外，在成型模具的浇口附近，树脂注入时的应力的影响大，树脂容易从引线框架剥离。
因此，在现有的树脂封闭工序中，通过将成型模具的浇口配置于树脂封装件的长边方向侧面一侧，并沿与短边方向侧面平行的方向注入熔融树脂，从而使距最终填充部位的距离缩短。此外，通过将浇口配置于树脂封装件的长边方向侧面一侧，从而降低了树脂注入时的应力的影响。
作为现有的树脂封闭型半导体装置的制造方法，例如在专利文献1中公开了一种朝向形成于成型模具的型腔的凹凸面的延伸方向加压注入经由浇口注入成型模具的熔融树脂的方法。在上述专利文献1中，浇口也配置于树脂封装件的长边方向侧面一侧。
现有技术文献
专利文献
专利文献1：日本专利特开2005-116556号公报
发明内容
发明所要解决的技术问题
如上所述，在现有的电力用半导体装置中，由于在树脂封闭工序中在树脂封装件的长边方向侧面一侧配置有浇口，因此，在长边方向侧面具有浇口断裂痕迹。另一方面，在成型机的模具中配置有多个浇口，能同时成型出多个电力用半导体装置，但与将浇口配置于树脂封装件的短边方向侧面一侧的情况相比，将浇口配置于树脂封装件的长边方向侧面一侧的情况下，存在单次能成型的电力用半导体装置的数量少这样的技术问题。
为了增加单次能成型的电力用半导体装置的数量，需要增大模具的长边方向的尺寸，但由于模具面内的温度不均加剧，因此树脂的成型性的控制变得困难。这样一来，并不容易增加单次能成型的电力用半导体装置的数量，现有的电力用半导体装置存在生产率低这样的技术问题。
本申请公开了用于解决上述技术问题的技术，其目的在于提供一种能够增加单次能成型的电力用半导体装置的数量并能实现生产率的提高的电力用半导体装置及其制造方法。
解决技术问题所采用的技术方案
本申请所公开的电力用半导体装置是一种电力用半导体装置，包括：引线框架，所述引线框架具有电独立的多个区域；功率半导体芯片，所述功率半导体芯片装设于引线框架的安装面，并且能够切换；配线构件，所述配线构件将功率半导体芯片与引线框架电连接；以及树脂封装件，所述树脂封装件将引线框架、功率半导体芯片和配线构件封闭，其中，树脂封装件具有：长边方向侧面，所述长边方向侧面是多个侧面中最长的侧面；以及短边方向侧面，所述短边方向侧面与长边方向侧面相连，并且，所述树脂封装件在短边方向侧面具有浇口断裂痕迹。
此外，本申请所公开的电力用半导体装置的制造方法是一种电力用半导体装置的制造方法，所述电力用半导体装置包括树脂封装件，其中，所述电力用半导体装置的制造方法包括如下工序：在将在安装面上装设有功率半导体芯片的引线框架配置于成型模具的型腔之后，经由浇口将熔融树脂注入型腔以成型树脂封装件，树脂封装件具有：长边方向侧面，所述长边方向侧面是多个侧面中最长的侧面；以及短边方向侧面，所述短边方向侧面与长边方向侧面相连，浇口配置于树脂封装件的短边方向侧面一侧。
发明效果
根据本申请所公开的电力用半导体装置，通过在树脂封装件的短边方向侧面具有浇口断裂痕迹，从而能够提供一种在成型树脂封装件的工序中单次能成型的数量多、生产率高且低价的电力用半导体装置。
此外，根据本申请所公开的电力用半导体装置的制造方法，在成型树脂封装件的工序中，将成型模具的浇口配置于树脂封装件的短边方向侧面一侧，从而能够增加单次能成型的电力用半导体装置的数量，能实现生产率的提高。
根据参照附图的以下详细说明，本申请的除了上述之外的目的、特征、观点和效果会更加明确。
附图说明
图1是表示根据实施方式1的电力用半导体装置的俯视图和侧视图。
图2是表示根据实施方式1的电力用半导体装置的剖视图。
图3是对根据实施方式1的电力用半导体装置的制造方法进行说明的剖视图。
图4是对根据实施方式1的电力用半导体装置的制造方法进行说明的剖视图。
图5是对根据实施方式1的电力用半导体装置的制造方法和现有的电力用半导体装置的制造方法进行说明的示意图。
图6是对使用了根据实施方式1的电力用半导体装置的控制装置一体型旋转电机和使用了现有的电力用半导体装置的控制装置一体型旋转电机进行说明的示意图。
图7是对根据实施方式2的电力用半导体装置的制造方法进行说明的俯视图。
图8是对根据实施方式2的电力用半导体装置的制造方法进行说明的俯视图。
图9是表示根据实施方式3的电力用半导体装置的俯视图。
具体实施方式
实施方式1
以下，基于附图对根据实施方式1的电力用半导体装置进行说明。图1的(a)和图1的(b)是表示根据实施方式1的电力用半导体装置的俯视图和侧视图，图2是图1的(a)中由A-A表示的部分的剖视图。在各图中，对相同、相当的部分标注相同符号。
如图1的(a)所示，根据实施方式1的电力用半导体装置1包括：金属制的引线框架2；能切换的功率半导体芯片3a、3b；电流检测用的电阻器4；作为金属制的配线构件的内引线5a、5b；以及将上述构件覆盖的作为模制树脂的树脂封装件6。引线框架2是将铜或铝等作为基材的合金的板材，通过蚀刻加工或冲压加工成型为配线图案状。在引线框架2的表面上，既可以使基材的金属露出，也可以使至少一部分被金、银、镍和锡等金属镀层覆盖。
此外，引线框架2具有电独立的多个区域，在图1所示的示例中，引线框架2具有：装设有功率半导体芯片3a的P电位引线21；装设有功率半导体芯片3b的AC电位引线22；以及未装设功率半导体芯片的N电位引线23。设有功率半导体芯片3b的AC电位引线22通过分流电阻等电阻器4而与未装设功率半导体芯片的AC电位引线22电连接。但是，引线框架2的多个区域的数量、形状和配置以及功率半导体芯片的数量和配置等并不限定于此。
如图2所示，引线框架2将相对的主表面中的一方作为安装面2a，将另一方作为散热面2b，在安装面2a上装设有功率半导体芯片3a、3b、内引线5a、5b和电阻器4等。此外，在引线框架2的散热面2b上经由散热面侧树脂6b和高导热率的绝缘性粘接剂接合有热沉(省略图示)。
作为功率半导体芯片3a、3b，使用例如MOSFET(Metal-oxide semiconductorfield-effect transistor：金属氧化物半导体场效应晶体管)，但并不限定于此，也可以是IGBT(Insulated gate bipolar transistor：绝缘栅双极晶体管)。在功率半导体芯片3a、3b的基材中使用硅、碳化硅、氮化硅，氮化镓和砷化镓等。
功率半导体芯片3a、3b在芯片上表面上包括作为上表面电极的源极电极、栅极部和栅极电极，在芯片下表面上具有下表面电极(均省略图示)。在图1的(a)所示的示例中，功率半导体芯片3a的上表面电极通过内引线5a而与AC电位引线22电连接，功率半导体芯片3b的上表面电极通过内引线5b而与N电位引线22电连接。此外，栅极电极通过丝焊(日文：ワイヤボンド)(省略图示)而与由引导框架2的一部分构成的栅极端子连接。
功率半导体芯片3a、3b的上表面电极与内引线5a、5b之间、内引线5a、5b与引线框架2之间以及下表面电极与引线框架2之间通过作为导电性接合构件的焊料7连接。这些多个接合部位的焊料7能通过由回流装置等进行的集中的热处理进行接合。
另外，在电力用半导体装置1使用时产生因温度变化引起的应变而使多个接合部位产生耐久性差异的情况下，也可以根据接合部位的不同而使用不同组成的焊料7。此外，导电性接合构件并不限定于焊料7，也可以是导电性树脂糊或烧结糊。在通过焊料7将上表面电极与内引线5a、5b接合的情况下，在上表面电极上实施镍镀层，成为带焊料规格。
这些引线框架2、功率半导体芯片3a、3b、电阻器4和内引线5a、5b等通过树脂封装件6封闭。树脂封装件6呈具有相对的主表面和将相对的主表面连接的四个以上的侧面的大致长方体。图1的(a)所示的树脂封装件6具有五个侧面，因此不是长方体，但在图1的(a)中，由R表示的虚线表示将树脂封装件6视为长方体的情况下的外形。多个侧面相对于树脂封装件6的主表面大致垂直。
此外，树脂封装件6具有：长边方向侧面61，所述长边方向侧面61是多个侧面中最长的侧面；以及短边方向侧面62，所述短边方向侧面62与长边方向侧面61相连。在树脂封装件6为长方体的情况下，具有两组长边方向侧面61和短边方向侧面62。另外，树脂封装件6在短边方向侧面62上具有第一浇口断裂痕迹63和第二浇口断裂痕迹64(统称为浇口断裂痕迹)。另外，在图1的(a)所示的示例中，在与长边方向侧面61相连的两个侧面中的较长那个侧面即短边方向侧面62上具有浇口断裂痕迹。
如图2所示，树脂封装件6包括：将引线框架2的安装面2a封闭的安装面侧树脂6a；以及将安装面2a的相反侧的散热面2b封闭的散热面侧树脂6b。安装面侧树脂6a和散热面侧树脂6b均为环氧树脂等模制树脂。安装面侧树脂6a使用一般的集成电路的模制树脂。此外，散热面侧树脂6b使用导热率比安装面侧树脂6a的导热率高(例如3W/m·K至12W/m·K左右)的高散热树脂。安装面侧树脂6a具有第一浇口断裂痕迹63，散热面侧树脂6b具有第二浇口断裂痕迹64。
第一浇口断裂痕迹63和第二浇口断裂痕迹64配置成与相对于引线框架2的主表面(例如安装面2a)垂直的方向不重合。此外，如图1的(b)所示，在从短边方向侧面62透视树脂封装件6时，第一浇口断裂痕迹63与最靠近第一浇口断裂痕迹63的引线框架2的角部2c的距离W1为1mm以上(W1≥1mm)。
同样地，第二浇口断裂痕迹64与最靠近第二浇口断裂痕迹64的引线框架2的角部2d的距离W2为1mm以上(W2≥1mm)。通过这样使浇口位置与引线框架2的角部2c、2d分开规定距离以上，从而能防止朝向树脂注入时的角部2c、2d的应力集中，能抑制模制树脂的剥离。另外，尽管在实施方式1中将规定距离设为1mm，但规定距离可根据引线框架2的厚度和宽度、或是树脂注入时的压力等适当改变。
使用图3、图4、图5的(a)和图5的(b)对电力用半导体装置1的制造方法进行说明。图3和图4是对根据实施方式1的电力用半导体装置的制造方法进行说明的图，其表示在将在安装面上装设有功率半导体芯片的引线框架(称为电路组装体)配置于成型模具的型腔之后，熔融树脂被注入之前的状态。另外，图3所示的电路组装体是图1的(a)中由B-B表示的部分的剖视图，图4所示的电路组装体是图1的(a)中由C-C表示的部分的剖视图。
此外，图5的(a)是对根据实施方式1的电力用半导体装置的制造方法进行说明的示意图，其表示电力用半导体装置1从成型模具10取出之前的状态。此外，作为比较例，图5的(b)是对现有的电力用半导体装置的制造方法进行说明的示意图，其表示现有的电力用半导体装置100从现有的成型模具10A取出之前的状态。另外，在图5的(a)和图5的(b)中，将树脂封装件6的形状设为长方体。
根据实施方式1的电力用半导体装置1的制造方法包括如下工序：在将在引导框架2的安装面2a上装设有功率半导体芯片3a、3b和内引线5a、5b等的电路组装体配置于成型模具10的型腔12的规定位置之后，经由浇口将熔融树脂注入型腔12以成型树脂封装件6。
成型模具10具有作为第一浇口的上侧浇口11a和作为第二浇口的下侧浇口11b(将其统称为浇口)。上侧浇口11a和下侧浇口11b配置成与相对于引线框架2的安装面2a垂直的方向不重合。此外，如上所述，浇口的位置与配置于型腔12的规定位置的引线框架2的角部分开规定距离(在实施方式中为1mm)以上。
如图3所示，上侧浇口11a供将引线框架2的安装面2a封闭的熔融树脂(安装面侧树脂6a)注入型腔12。此外，如图4所示，下侧浇口11b供将散热面2b封闭的熔融树脂(散热面侧树脂6b)注入型腔12。这些浇口在与树脂封装件6的短边方向侧面62对应的成型模具10的内壁13开口。
此外，安装面侧树脂6a和散热面侧树脂6b分别从上侧浇口11a和下侧浇口11b错开时间分别注入。由此，能对安装面侧树脂6a和散热面侧树脂6b使用不同的树脂，作为散热面侧树脂6b，能使用散热性比安装面侧树脂6a的散热性高的树脂。此外，在第一次树脂注入之后，能在不将残留于上侧浇口11a的安装面侧树脂6a去除的情况下，从下侧浇口11b进行第二次的树脂注入。
在树脂封装件6成型之后，在刚从成型模具10将电力用半导体装置1取出之后，实施将残留在浇口内的模制树脂与电力用半导体装置1切断的浇口断裂。在浇口断裂后的电力用半导体装置1的树脂封装件6处残留有浇口断裂痕迹。之后，将引线框架2的电配线上不需要的部分去除。由此，引导框架2被切断，形成电独立的P电位引线21、AC电位引线22、N电位引线23和信号端子24等。
另外，成型模具10包括能同时成型多个树脂封装件6的多个型腔12。在根据实施方式1的成型模具10的情况下，如图5的(a)所示，多个型腔12配置成相邻的树脂封装件6的长边方向侧面61彼此面对。即，与树脂封装件6的长边方向侧面61对应的成型模具10的内壁14彼此相向。
另一方面，作为比较例，在制造图5的(b)所示的现有的电力用半导体装置100的成型模具10A的情况下，多个型腔12配置成相邻的树脂封装件6的短边方向侧面62彼此面对。即，与树脂封装件6的短边方向侧面62对应的内壁13彼此相向。
在将树脂封装件6的长边方向侧面61的尺寸设为L1，将短边方向侧面62的尺寸设为L2(L1＞L2)，将成型模具10的长边方向的尺寸设为L3时，在图5的(a)所示的成型模具10中，通过简单计算，单次能成型约(L2/L3×2)个电力用半导体装置1。此外，在图5的(b)所示的现有的成型模具10A中，单次能成型的电力用半导体装置100的数量通过简单计算约为(L1/L3×2)个。这样，电力用半导体装置1通过在树脂封装件6的短边方向侧面62一侧配置浇口，从而能在成型模具10内高效地排列，与现有的电力用半导体装置100相比，单次能成型的数量更多。
此外，在将根据实施方式1的电力用半导体装置1用于控制装置一体型旋转电机的控制装置的情况下，能实现利用了在短边方向侧面62具有浇口断裂痕迹的高效的排列，能实现控制装置的小型化。图6的(a)是对使用了根据实施方式1的电力用半导体装置的控制装置一体型旋转电机进行说明的示意图，图6的(b)是对使用了现有的电力用半导体装置的控制装置一体型旋转电机进行说明的示意图。另外，在图6的(a)和图6的(b)中，将树脂封装件的形状设为长方体，并省略了信号端子等的图示。此外，省略了除了电力用半导体装置之外的部件的图示。
控制装置一体型旋转电机是将旋转电机(省略图示)和用于对旋转电机进行控制的控制装置30一体化而成的，控制装置30包括：电力用半导体装置1(功率模块)，所述电力用半导体装置1具有用于与定子绕组通电的开关元件；励磁模块，所述励磁模块具有用于与转子的励磁绕组通电的开关元件；以及控制基板，所述控制基板对所述电力用半导体装置1和所述励磁模块进行控制。电力用半导体装置1和励磁模块装设于热沉并内置于树脂制的壳体32。壳体32的轴31的周边构成为呈中空。另外，对于控制装置30的详细结构，由于在本申请中并无直接关系，因此省略说明。
如图6的(a)所示，在排列有六个电力用半导体装置1的控制装置30中，控制装置30的壳体32的径向的尺寸如图中L4所示那样。另一方面，如图6的(b)所示，在排列有六个现有的电力用半导体装置100的控制装置30A中，控制装置30A的壳体32A的径向的尺寸在图中如L5所示那样，L4＜L5。另外，图6的(a)所示的电力用半导体装置1的排列方法为一例，控制装置30中的电力用半导体装置1的数量和排列方法并不限定于此。
如上所述，根据实施方式1，通过在树脂封装件6的短边方向侧面62具有浇口断裂痕迹，从而能够提供一种在成型树脂封装件6的工序中使单次能成型的数量变多、生产率高且低价的电力用半导体装置1。此外，通过将浇口断裂痕迹与最靠近浇口断裂痕迹的引线框架2的角部的距离设为规定距离(1mm)以上，从而能够抑制由朝向树脂注入时的引线框架2的角部的应力集中而导致的模制树脂的剥离，能获得高可靠性的电力用半导体装置1。
此外，根据实施方式1的电力用半导体装置的制造方法，通过将成型模具10的浇口配置于树脂封装件6的短边方向侧面62一侧，能将多个型腔12配置成使相邻的树脂封装件6的长边方向侧面61彼此面对。由此，增加了单次能成型的电力用半导体装置1的数量，提高了生产率。此外，上侧浇口11a和下侧浇口11b配置成与相对于引导框架2的安装面2a垂直的方向不重合，因此，能分散树脂注入时的引线框架2的应力集中，能抑制模制树脂的剥离。
此外，由于分别从上侧浇口11a和下侧浇口11b错开时间注入安装面侧树脂6a和散热面侧树脂6b，因此，能选择高散热性的树脂作为散热面侧树脂6b，能提供高散热性的电力用半导体装置1。另外，在第一次树脂注入之后，能在不将残留于上侧浇口11a的安装面侧树脂6a去除的情况下，从下侧浇口11b进行第二次的树脂注入，因此，能以较少的工序数量进行制造，能实现生产率的提高。
实施方式2
图7和图8是对根据实施方式2的电力用半导体装置的制造方法进行说明的俯视图。图7和图8所示的电力用半导体装置1A、1B表示将残留在上侧浇口11a和下侧浇口11b内部的模制树脂被切断之前的状态。另外，根据实施方式2的电力用半导体装置1A、1B是根据上述实施方式1的电力用半导体装置1的变形例，因此，省略对各结构要素的说明，仅对不同点进行说明。
一般而言，在成型树脂封装件的成型模具内，熔融树脂在粘度变高且润湿性变差的状态下流入最终填充部位，因此，在最终填充部位处容易产生由于空气卷入而导致的空洞。因此，较为理想的是，从浇口到最终填充部位的距离短，但在如上述实施方式1那样将成型模具10的浇口配置于树脂封装件6的短边方向侧面62一侧的情况下，从浇口到最终填充部位的距离比以往更长。
在上述实施方式1中，为了防止空洞的产生，需要相对于以往提高成型压力，但由于提高了成型压力，因此容易引起来自浇口的树脂泄漏。此外，与将浇口配置于长边方向侧面61一侧的情况相比，在将浇口配置于树脂封装件6的短边方向侧面62一侧的情况下，树脂注入时的应力的影响更大，另外，由于提高了成型压力，因此，树脂注入时的应力的影响也变大。即，在将浇口配置于树脂封装件6的短边方向侧面62一侧的情况下，需要抑制树脂注入时的树脂泄漏的影响和应力的影响。
因而，如图7所示，在根据实施方式2的电力用半导体装置1A中，将引线框架2的周缘部的电配线上不需要的部分作为悬吊销25配置在成型模具10的上侧浇口11a与下侧浇口11b之间。悬吊销25在成型树脂封装件6的工序中固定于成型模具10，以对引线框架2的半导体芯片装设部进行支承。由此，能降低树脂注入时施加于引线框架2的应力，能抑制模制树脂的剥离。
此外，通过将悬吊销25配置在上侧浇口11a与下侧浇口11b之间，能防止从上侧浇口11a泄漏的安装面侧树脂6a进入下侧浇口11b。即，悬吊销25发挥将从上侧浇口11a泄漏的熔融树脂堵塞的阻挡件的功能。由此，能防止下侧浇口11b堵塞，提高了生产率。另外，由于是在上侧浇口11a与下侧浇口11b之间不存在信号端子的结构，因此，能将残留在浇口内的模制树脂与悬吊销25同时切除，从而使成型模具10的结构呈简单的形状。
此外，在图8所示的电力用半导体装置1B中，将作为引线框架2的周缘部的端子的部分的端子形成部24A配置在成型模具10的上侧浇口11a与下侧浇口11b之间，并且将悬吊销25分别配置在端子形成部24A与上侧浇口11a之间以及端子形成部24A与下侧浇口11b之间。在图8所示的结构的情况下，在刚成型之后将残留在浇口内的模制树脂切除，在后续工序中将悬吊销25切除。
在电力用半导体装置1B中，通过将悬吊销25配置于端子形成部24A的两侧，能防止来自两侧的浇口的树脂泄漏附着于端子形成部24A。此外，在上侧浇口11a与下侧浇口11b之间具有两根悬吊销25和一根端子形成部24A，因此，与图7所示的电力用半导体装置1A相比，还能降低树脂注入时施加于引线框架2的应力。
根据实施方式2，除了与上述实施方式1相同的效果之外，通过将悬吊销25配置在上侧浇口11a与下侧浇口11b之间，还能抑制树脂注入时的树脂泄漏的影响和应力的影响。由此，制造工序得以简化，并且模制树脂的剥离得以抑制，因此，提高了生产率和可靠性。
实施方式3
图9是表示根据实施方式3的电力用半导体装置的俯视图。图9所示的电力用半导体装置1C表示将残留在上侧浇口11a和下侧浇口11b内部的模制树脂切断之前的状态。另外，根据实施方式3的电力用半导体装置1C是根据上述实施方式1的电力用半导体装置1的变形例，因此，省略对各结构要素的说明，仅对不同点进行说明。
在上述实施方式2中，通过将悬吊销25配置在上侧浇口11a与下侧浇口11b之间，抑制了树脂注入时的应力的影响，并抑制了模制树脂的剥离，但在根据实施方式3的电力用半导体装置1C中，如图9所示，在与树脂封装件6的短边方向侧面62相邻的引线框架2的周缘部处设置有表面改质区域26，与引线框架2的其他区域相比，所述表面改质区域26与树脂封装件6的紧贴性更高。
表面改质区域26是通过例如激光处理或化学处理等表面处理使引线框架2的表面粗糙化而获得的。此外，也可以在引线框架2的表面设置凹部以获得锚固效果。或者，也可以不在表面改质区域26配置金属镀层，而使作为引线框架2的基材的铜露出。
根据实施方式3，除了具有与上述实施方式1相同的效果之外，通过使引线框架2在与树脂封装件6的短边方向侧面62相邻的周缘部具有表面改质区域26，能抑制由树脂注入时的应力引起的模制树脂的剥离，提高了生产率和可靠性。
本公开记载有各种各样的例示的实施方式和实施例，但一个或多个实施方式所记载的各种各样的特征、方式以及功能并不局限于应用于特定的实施方式，能单独或以各种组合的方式应用于实施方式。因此，未被例示的无数变形例被设想在本申请说明书所公开的技术范围内。例如，包含对至少一个构成要素进行变形的情况、追加的情况或省略的情况，另外，还包含将至少一个构成要素抽出并与其他实施方式的构成要素组合的情况。
(符号说明)
1、1A、1B、1C、100 电力用半导体装置；
2 引线框架；
2a 安装面；
2b 散热面；
2c、2d 角部；
3a、3b 功率半导体芯片；
4 电阻器；
5a、5b 内引线；
6 树脂封装件；
6a 安装面侧树脂；
6b 散热面侧树脂；
7 焊料；
10、10A 成型模具；
11a 上侧浇口；
11b 下侧浇口；
12 型腔；
13、14 内壁；
21 P电位引线；
22 AC电位引线；
23 N电位引线；
24 信号端子；
24A 端子形成部；
25 悬吊销；
26 表面改质区域；
30、30A 控制装置；
31 轴；
32、32A 壳体；
61 长边方向侧面；
62 短边方向侧面；
63 第一浇口断裂痕迹；
64 第二浇口断裂痕迹。

Claims (14)

1.一种电力用半导体装置，包括：引线框架，所述引线框架具有电独立的多个区域；功率半导体芯片，所述功率半导体芯片装设于所述引线框架的安装面，并且能够切换；配线构件，所述配线构件将所述功率半导体芯片与所述引线框架电连接；以及树脂封装件，所述树脂封装件将所述引线框架、所述功率半导体芯片和所述配线构件封闭，其特征在于，
所述树脂封装件具有：长边方向侧面，所述长边方向侧面是多个侧面中最长的侧面；以及短边方向侧面，所述短边方向侧面与所述长边方向侧面相连，并且，所述树脂封装件在所述短边方向侧面具有浇口断裂痕迹。
2.如权利要求1所述的电力用半导体装置，其特征在于，
所述树脂封装件包括：安装面侧树脂，所述安装面侧树脂将所述引线框架的所述安装面封闭；以及散热面侧树脂，所述散热面侧树脂将所述安装面的相反侧的散热面封闭。
3.如权利要求2所述的电力用半导体装置，其特征在于，
所述浇口断裂痕迹包括第一浇口断裂痕迹和第二浇口断裂痕迹，所述安装面侧树脂具有所述第一浇口断裂痕迹，所述散热面侧树脂具有所述第二浇口断裂痕迹。
4.如权利要求3所述的电力用半导体装置，其特征在于，
所述第一浇口断裂痕迹和所述第二浇口断裂痕迹配置成与相对于所述引线框架的所述安装面垂直的方向不重合。
5.如权利要求1至4中任一项所述的电力用半导体装置，其特征在于，
所述树脂封装件具有四个以上的侧面，所述短边方向侧面是与所述长边方向侧面相连的两个侧面中较长的侧面。
6.如权利要求1至5中任一项所述的电力用半导体装置，其特征在于，
在从所述短边方向侧面透视所述树脂封装件时，所述浇口断裂痕迹与最靠近所述浇口断裂痕迹的所述引线框架的角部的距离为1mm以上。
7.如权利要求1至6中任一项所述的电力用半导体装置，其特征在于，
所述引线框架在与所述树脂封装件的所述短边方向侧面相邻的周缘部具有表面改质区域，与所述引线框架的其他区域相比，所述表面改质区域与所述树脂封装件的紧贴性更高。
8.一种电力用半导体装置的制造方法，所述电力用半导体装置包括树脂封装件，其特征在于，
所述电力用半导体装置的制造方法包括如下工序：在将在安装面上装设有功率半导体芯片的引线框架配置于成型模具的型腔之后，经由浇口将熔融树脂注入所述型腔以成型树脂封装件，
所述树脂封装件具有：长边方向侧面，所述长边方向侧面是多个侧面中最长的侧面；以及短边方向侧面，所述短边方向侧面与所述长边方向侧面相连，
所述浇口配置于所述树脂封装件的所述短边方向侧面一侧。
9.如权利要求8所述的电力用半导体装置的制造方法，其特征在于，
所述成型模具包括能同时成型多个所述树脂封装件的多个所述型腔，多个所述型腔配置成使相邻的所述树脂封装件的所述长边方向侧面彼此面对。
10.如权利要求8或9所述的电力用半导体装置的制造方法，其特征在于，
所述浇口包括：第一浇口，所述第一浇口供将所述引线框架的所述安装面封闭的安装面侧树脂注入；以及第二浇口，所述第二浇口供将与所述安装面相反一侧的散热面封闭的散热面侧树脂注入。
11.如权利要求10所述的电力用半导体装置的制造方法，其特征在于，
所述第一浇口和所述第二浇口配置成与相对于所述引线框架的所述安装面垂直的方向不重合。
12.如权利要求10或11所述的电力用半导体装置的制造方法，其特征在于，
所述安装面侧树脂和所述散热面侧树脂错开时间注入。
13.如权利要求10至12中任一项所述的电力用半导体装置的制造方法，其特征在于，
将所述引线框架的周缘部的电配线上不需要的部分作为悬吊销配置在所述第一浇口与所述第二浇口之间。
14.如权利要求13所述的电力用半导体装置的制造方法，其特征在于，
将所述引线框架的端子形成部配置在所述第一浇口与所述第二浇口之间，并且将所述悬吊销配置在所述端子形成部与所述第一浇口之间以及将所述悬吊销配置在所述端子形成部与所述第二浇口之间。
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