CN1127765C - 互补型金属氧化物晶体管半导体器件及其制造方法 - Google Patents
互补型金属氧化物晶体管半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1127765C CN1127765C CN98123573A CN98123573A CN1127765C CN 1127765 C CN1127765 C CN 1127765C CN 98123573 A CN98123573 A CN 98123573A CN 98123573 A CN98123573 A CN 98123573A CN 1127765 C CN1127765 C CN 1127765C
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- China
- Prior art keywords
- film
- semiconductor device
- layer
- interlayer dielectric
- conducting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 51
- 229920005591 polysilicon Polymers 0.000 claims abstract description 51
- 239000011229 interlayer Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000006386 neutralization reaction Methods 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 20
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 108
- 229910021341 titanium silicide Inorganic materials 0.000 description 33
- 230000003647 oxidation Effects 0.000 description 24
- 238000007254 oxidation reaction Methods 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052719 titanium Inorganic materials 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 16
- 239000010936 titanium Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP300867/1997 | 1997-10-31 | ||
JP9300867A JPH11135646A (ja) | 1997-10-31 | 1997-10-31 | 相補型mos半導体装置及びその製造方法 |
JP300867/97 | 1997-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1216860A CN1216860A (zh) | 1999-05-19 |
CN1127765C true CN1127765C (zh) | 2003-11-12 |
Family
ID=17890072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98123573A Expired - Fee Related CN1127765C (zh) | 1997-10-31 | 1998-11-02 | 互补型金属氧化物晶体管半导体器件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6137177A (zh) |
EP (1) | EP0915510A1 (zh) |
JP (1) | JPH11135646A (zh) |
KR (1) | KR19990037533A (zh) |
CN (1) | CN1127765C (zh) |
TW (1) | TW404049B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3338383B2 (ja) * | 1998-07-30 | 2002-10-28 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6383879B1 (en) * | 1999-12-03 | 2002-05-07 | Agere Systems Guardian Corp. | Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
JP2005026380A (ja) | 2003-06-30 | 2005-01-27 | Toshiba Corp | 不揮発性メモリを含む半導体装置及びその製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673375B2 (ja) * | 1984-03-19 | 1994-09-14 | 富士通株式会社 | 半導体装置の製造方法 |
JPS63177538A (ja) * | 1987-01-19 | 1988-07-21 | Fujitsu Ltd | 半導体装置 |
KR970003903B1 (en) * | 1987-04-24 | 1997-03-22 | Hitachi Mfg Kk | Semiconductor device and fabricating method thereof |
US4897368A (en) * | 1987-05-21 | 1990-01-30 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a polycidegate employing nitrogen/oxygen implantation |
JPH0212835A (ja) * | 1988-06-30 | 1990-01-17 | Toshiba Corp | 半導体装置およびその製造方法 |
US5093700A (en) * | 1989-12-20 | 1992-03-03 | Nec Electronics Inc. | Single gate structure with oxide layer therein |
US5021848A (en) * | 1990-03-13 | 1991-06-04 | Chiu Te Long | Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof |
JPH05291567A (ja) * | 1992-04-14 | 1993-11-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH06104428A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | 半導体装置及びその製造方法 |
JPH06151834A (ja) * | 1992-11-13 | 1994-05-31 | Nippon Steel Corp | 半導体装置の製造方法 |
JP3317459B2 (ja) * | 1993-04-30 | 2002-08-26 | ローム株式会社 | 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法 |
JPH0794731A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3181783B2 (ja) * | 1993-12-29 | 2001-07-03 | 株式会社リコー | デュアルゲートcmos型半導体装置及びその製造方法 |
JP2746099B2 (ja) * | 1994-01-27 | 1998-04-28 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3045946B2 (ja) * | 1994-05-09 | 2000-05-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイスの製造方法 |
JPH08274090A (ja) * | 1995-03-30 | 1996-10-18 | Sony Corp | 絶縁膜の形成方法 |
JP2845168B2 (ja) * | 1995-06-15 | 1999-01-13 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3371631B2 (ja) * | 1995-08-07 | 2003-01-27 | ソニー株式会社 | 半導体装置およびその製造方法 |
JPH0964349A (ja) * | 1995-08-22 | 1997-03-07 | Sony Corp | 高融点シリサイドを持つ半導体装置とその製造方法 |
JPH0992728A (ja) * | 1995-09-21 | 1997-04-04 | Mitsubishi Electric Corp | 相補型mos電界効果トランジスタおよびその製造方法 |
JPH09129870A (ja) * | 1995-10-31 | 1997-05-16 | Nec Corp | 半導体装置の製造方法 |
US5861340A (en) * | 1996-02-15 | 1999-01-19 | Intel Corporation | Method of forming a polycide film |
-
1997
- 1997-10-31 JP JP9300867A patent/JPH11135646A/ja active Pending
-
1998
- 1998-10-28 EP EP98120414A patent/EP0915510A1/en not_active Withdrawn
- 1998-10-28 US US09/181,328 patent/US6137177A/en not_active Expired - Lifetime
- 1998-10-30 TW TW087118148A patent/TW404049B/zh not_active IP Right Cessation
- 1998-10-30 KR KR1019980046340A patent/KR19990037533A/ko not_active Application Discontinuation
- 1998-11-02 CN CN98123573A patent/CN1127765C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0915510A1 (en) | 1999-05-12 |
TW404049B (en) | 2000-09-01 |
US6137177A (en) | 2000-10-24 |
JPH11135646A (ja) | 1999-05-21 |
KR19990037533A (ko) | 1999-05-25 |
CN1216860A (zh) | 1999-05-19 |
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030403 |
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Effective date of registration: 20030403 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
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Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20031112 Termination date: 20131102 |