JPH0560265B2 - - Google Patents

Info

Publication number: JPH0560265B2
Authority: JP; Japan
Prior art keywords: impurity; gate; layer; impurity layer; concentration
Prior art date: 1983-12-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP24381083A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60136376A (ja

Inventor

Hiroko Kaneko

Mitsumasa Koyanagi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-12-26

Filing date

1983-12-26

Publication date

1993-09-01

1983-12-26 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1983-12-26 Priority to JP24381083A priority Critical patent/JPS60136376A/ja

1985-07-19 Publication of JPS60136376A publication Critical patent/JPS60136376A/ja

1993-09-01 Publication of JPH0560265B2 publication Critical patent/JPH0560265B2/ja

Status Granted legal-status Critical Current

Links

239000012535 impurity Substances 0.000 claims description 99
239000000758 substrate Substances 0.000 claims description 16
239000004065 semiconductor Substances 0.000 claims description 11
238000004519 manufacturing process Methods 0.000 claims description 5
229910052785 arsenic Inorganic materials 0.000 claims description 4
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
238000009792 diffusion process Methods 0.000 claims description 4
238000010438 heat treatment Methods 0.000 claims description 4
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
229910052698 phosphorus Inorganic materials 0.000 claims description 2
239000011574 phosphorus Substances 0.000 claims description 2
239000010410 layer Substances 0.000 description 78
229910004298 SiO 2 Inorganic materials 0.000 description 14
238000000034 method Methods 0.000 description 13
238000009826 distribution Methods 0.000 description 9
239000000969 carrier Substances 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
230000006866 deterioration Effects 0.000 description 4
230000000694 effects Effects 0.000 description 4
230000005684 electric field Effects 0.000 description 4
239000011229 interlayer Substances 0.000 description 4
239000005360 phosphosilicate glass Substances 0.000 description 4
229910052710 silicon Inorganic materials 0.000 description 4
239000010703 silicon Substances 0.000 description 4
229910052814 silicon oxide Inorganic materials 0.000 description 4
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
229920005591 polysilicon Polymers 0.000 description 3
230000000295 complement effect Effects 0.000 description 2
238000002513 implantation Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
238000000151 deposition Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
-1 for example Substances 0.000 description 1
239000007943 implant Substances 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
229920006280 packaging film Polymers 0.000 description 1
239000012785 packaging film Substances 0.000 description 1
238000002161 passivation Methods 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)

JP24381083A 1983-12-26 1983-12-26 半導体装置の製造方法 Granted JPS60136376A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP24381083A JPS60136376A (ja)	1983-12-26	1983-12-26	半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP24381083A JPS60136376A (ja)	1983-12-26	1983-12-26	半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS60136376A JPS60136376A (ja)	1985-07-19
JPH0560265B2 true JPH0560265B2 (zh)	1993-09-01

Family

ID=17109267

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP24381083A Granted JPS60136376A (ja)	1983-12-26	1983-12-26	半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS60136376A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0187016B1 (en) *	1984-12-27	1991-02-20	Kabushiki Kaisha Toshiba	Misfet with lightly doped drain and method of manufacturing the same
JPS61216364A (ja) *	1985-03-20	1986-09-26	Fujitsu Ltd	半導体装置
JPS6315465A (ja) *	1986-07-07	1988-01-22	Nec Corp	半導体装置の製造方法
US5215936A (en) *	1986-10-09	1993-06-01	Kabushiki Kaisha Toshiba	Method of fabricating a semiconductor device having a lightly-doped drain structure
JPH01204471A (ja) *	1988-02-09	1989-08-17	Mitsubishi Electric Corp	半導体装置の製造方法
JP2760068B2 (ja) *	1989-07-18	1998-05-28	ソニー株式会社	Ｍｉｓ型半導体装置の製造方法
JPH04206933A (ja) *	1990-11-30	1992-07-28	Nec Corp	半導体装置
WO1994027325A1 (en) *	1993-05-07	1994-11-24	Vlsi Technology, Inc.	Integrated circuit structure and method
KR100189964B1 (ko) *	1994-05-16	1999-06-01	윤종용	고전압 트랜지스터 및 그 제조방법
JP3762002B2 (ja) *	1996-11-29	2006-03-29	株式会社東芝	薄膜トランジスタ、及び液晶表示装置
JP3594550B2 (ja)	2000-11-27	2004-12-02	シャープ株式会社	半導体装置の製造方法

1983
- 1983-12-26 JP JP24381083A patent/JPS60136376A/ja active Granted

Also Published As

Publication number	Publication date
JPS60136376A (ja)	1985-07-19

Publication	Publication Date	Title
US9018697B2 (en)	2015-04-28	fin FET and method of fabricating same
US5245208A (en)	1993-09-14	Semiconductor device and manufacturing method thereof
US5510279A (en)	1996-04-23	Method of fabricating an asymmetric lightly doped drain transistor device
JPH081957B2 (ja)	1996-01-10	半導体装置の製造方法
US4908327A (en)	1990-03-13	Counter-doped transistor
JP2957757B2 (ja)	1999-10-06	トランジスタ製作方法
JPH0560265B2 (zh)	1993-09-01
JPS6344770A (ja)	1988-02-25	電界効果型トランジスタの製造方法
KR940011482B1 (ko)	1994-12-19	Mos형 반도체 장치
JPH10144921A (ja)	1998-05-29	半導体素子の構造及び製造方法
US8003472B2 (en)	2011-08-23	Method of manufacturing semiconductor device
JPS6197967A (ja)	1986-05-16	半導体装置およびその製造方法
JPS6344769A (ja)	1988-02-25	電界効果型トランジスタ及びその製造方法
KR100415191B1 (ko)	2004-03-26	비대칭형 씨모스 트랜지스터의 제조 방법
JPS61210673A (ja)	1986-09-18	Ｍｉｓ型半導体装置
KR100200080B1 (ko)	1999-06-15	반도체 장치 및 그 제조방법
JPH0491481A (ja)	1992-03-24	Ｍｉｓ電界効果トランジスタ
JPS5837990B2 (ja)	1983-08-19	半導体装置の製造方法
JPH04255233A (ja)	1992-09-10	半導体装置及びその製造方法
JP2602589B2 (ja)	1997-04-23	Ｌｄｄトランジスタの製造方法
KR960006689B1 (ko)	1996-05-22	반도체소자의 ldd 제조방법
KR100204014B1 (ko)	1999-07-01	모스트랜지스터 및 그 제조방법
JP2773159B2 (ja)	1998-07-09	半導体集積回路
KR0166832B1 (ko)	1999-01-15	반도체 소자의 제조방법
JPS60136377A (ja)	1985-07-19	絶縁ゲ−ト半導体装置の製造法