JPH0560265B2 - - Google Patents
Info
- Publication number
- JPH0560265B2 JPH0560265B2 JP24381083A JP24381083A JPH0560265B2 JP H0560265 B2 JPH0560265 B2 JP H0560265B2 JP 24381083 A JP24381083 A JP 24381083A JP 24381083 A JP24381083 A JP 24381083A JP H0560265 B2 JPH0560265 B2 JP H0560265B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- gate
- layer
- impurity layer
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 78
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24381083A JPS60136376A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24381083A JPS60136376A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60136376A JPS60136376A (ja) | 1985-07-19 |
JPH0560265B2 true JPH0560265B2 (zh) | 1993-09-01 |
Family
ID=17109267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24381083A Granted JPS60136376A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60136376A (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0187016B1 (en) * | 1984-12-27 | 1991-02-20 | Kabushiki Kaisha Toshiba | Misfet with lightly doped drain and method of manufacturing the same |
JPS61216364A (ja) * | 1985-03-20 | 1986-09-26 | Fujitsu Ltd | 半導体装置 |
JPS6315465A (ja) * | 1986-07-07 | 1988-01-22 | Nec Corp | 半導体装置の製造方法 |
US5215936A (en) * | 1986-10-09 | 1993-06-01 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device having a lightly-doped drain structure |
JPH01204471A (ja) * | 1988-02-09 | 1989-08-17 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2760068B2 (ja) * | 1989-07-18 | 1998-05-28 | ソニー株式会社 | Mis型半導体装置の製造方法 |
JPH04206933A (ja) * | 1990-11-30 | 1992-07-28 | Nec Corp | 半導体装置 |
WO1994027325A1 (en) * | 1993-05-07 | 1994-11-24 | Vlsi Technology, Inc. | Integrated circuit structure and method |
KR100189964B1 (ko) * | 1994-05-16 | 1999-06-01 | 윤종용 | 고전압 트랜지스터 및 그 제조방법 |
JP3762002B2 (ja) * | 1996-11-29 | 2006-03-29 | 株式会社東芝 | 薄膜トランジスタ、及び液晶表示装置 |
JP3594550B2 (ja) | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
-
1983
- 1983-12-26 JP JP24381083A patent/JPS60136376A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60136376A (ja) | 1985-07-19 |
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