CN112670353A - Boron-doped selective emitter battery and preparation method thereof - Google Patents
Boron-doped selective emitter battery and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 72
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052796 boron Inorganic materials 0.000 claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 claims abstract description 47
- 238000007639 printing Methods 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 239000002002 slurry Substances 0.000 claims abstract description 23
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 51
- 229910004205 SiNX Inorganic materials 0.000 claims description 34
- 238000002161 passivation Methods 0.000 claims description 24
- 229910017107 AlOx Inorganic materials 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 11
- 230000005641 tunneling Effects 0.000 claims description 11
- 239000003513 alkali Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims 6
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 3
- 230000001131 transforming effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, and discloses a boron-doped selective emitter cell and a preparation method thereof aiming at the problems of deep junction of a diffusion heavy diffusion region and unobvious difference between surface concentration and a light diffusion region in the prior art2Layer of said SiO2A P-doped polysilicon layer is disposed on the layer. In order to improve the efficiency of the solar cell and reduce the recombination rate by adopting an SE structure, the selective boron SE structure is prepared by adopting a boron slurry printing and laser propelling mode, so that the characteristics of deep junction in a heavily doped region, high surface concentration, shallow junction in a lightly doped region and low surface concentration are realized, the process is simple and convenient, the operation is convenient, and the industry of boron SE is greatly propelledAnd (5) transforming the process.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a boron-doped selective emitter cell and a preparation method thereof.
Background
A TOPCon solar cell (Tunnel Oxide Passivated Contact) is a solar cell using an ultra-thin Oxide layer as a passivation layer structure. The structure provides good surface passivation for the back of a silicon wafer, the ultrathin oxide layer can enable multi-electron tunneling to enter the polycrystalline silicon layer and simultaneously block minority hole recombination, and then electrons are transversely transmitted in the polycrystalline silicon layer and collected by metal, so that metal contact recombination current is greatly reduced, and open-circuit voltage and short-circuit current of the battery are improved.
The emitter of the currently commercialized N-type solar cell usually adopts a uniform junction, the diffusion sheet resistance is 80-110 omega/sq. For an N-type battery, a B diffusion SE structure is realized by adopting a laser doping technology, the B diffusion SE structure is limited by conditions such as B source concentration in BSG, the junction depth, surface concentration and the like of a heavy diffusion region are not obviously different from those of a light diffusion region, and extra damage is also introduced by laser. Therefore, there is a need to solve the problem of increasing the efficiency and alleviating the recombination rate of the TOPCon battery terminal.
The invention discloses a laser boron-doped selective emitter TOPCon structure battery and a preparation method thereof, which are disclosed in the patent number CN201910578339.2 with the patent name of 'a laser boron-doped selective emitter TOPCon structure battery and a preparation method thereof', and the method comprises the following steps: cleaning and texturing an N-type silicon wafer; in boron diffusion, a P + + layer with high boron surface concentration is formed in a pushing mode, and an oxidation process is not carried out; carrying out doping propulsion on the grid line region by adopting laser; cleaning, and putting the silicon wafer back to a diffusion furnace for oxidation to form a selective emitter; removing the BSG and the P + layer on the back surface, and preparing a tunneling oxide layer and a doped thin film silicon layer on the back surface; removing polycrystalline silicon generated by front surface winding plating and BSG obtained in the step II, and depositing a passivation layer and a SiNx anti-reflection film on two sides; and screen printing the double-sided electrode. The preparation method provided by the invention can improve the open-circuit voltage of the cell, can improve the filling factor of the cell, and finally improves the conversion efficiency of the TOPCon solar cell.
The defects are that the junction depth of the heavy diffusion region, the difference between the surface concentration and the light diffusion region is not obvious, and the recombination rate is high.
Disclosure of Invention
The invention provides a boron-doped selective emitter battery and a preparation method thereof, aiming at overcoming the problems of junction depth of a B diffusion heavy diffusion region and unobvious difference between surface concentration and a light diffusion region.
1) The light diffusion area in the SE structure has high sheet resistance, shallow junction, low recombination rate and good short-wave response;
2) the re-expansion region has low sheet resistance, deep junction and low metal-semiconductor contact resistance.
3) The open-circuit voltage, the short-circuit current and the fill factor are improved, and the improvement of the battery efficiency is facilitated.
In order to achieve the purpose, the invention adopts the following technical scheme:
a boron-doped selective emitter battery comprises N-type crystalline silicon, two positive electrodes arranged on the front surface of the N-type crystalline silicon and two negative electrodes arranged on the back surface of the N-type crystalline silicon, wherein SiO is arranged on the back surface of the N-type crystalline silicon2Layer of said SiO2P-doped polysilicon on the layerAnd (3) a layer.
Compared with a uniform junction battery, the selective structure boron emitter N-type double-sided battery prepared by the method has the advantages that the open-circuit voltage can be improved to 0.72%, and the battery efficiency gain reaches 1.47%.
Preferably, the front surface of the N-type crystalline silicon is sequentially provided with a P + layer and AlO from inside to outsidexLayer and SiNxA layer; the positive electrode is through SiNxLayer, AlOxA layer and a P + layer.
Preferably, a P + + layer is disposed in a contact region between the positive electrode and the N-type crystalline silicon.
Preferably, SiO is sequentially arranged on the back surface of the N-type crystalline silicon from inside to outside2Layer, P-doped polysilicon layer and SiNxA layer; the negative electrode sequentially penetrates through the SiNxThe negative electrode is in contact with the P-doped polycrystalline silicon layer.
Preferably, the depth of the negative electrode inserted into the P-doped polysilicon layer accounts for 60-80% of the total thickness of the P-doped polysilicon layer.
The negative electrode is inserted into the P-doped polycrystalline silicon layer by 60-80% of the total thickness, so that the polycrystalline silicon layer is not burnt through while the positive electrode is fully contacted with the P + + layer, the current collection efficiency is ensured, and the passivation effect of the battery is also ensured.
Preferably, the positive electrode is Ag-Al paste; the negative electrode is Ag paste.
A preparation method of the boron-doped selective emitter battery comprises the following preparation steps:
1) preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in modes of diffusion and the like;
2) removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
4) printing boron paste at the corresponding position of the metal grid line on the front surface of the chip source and drying, wherein the width of the boron paste printing line is 100-200 mu m;
5) carrying out laser doping on the boron slurry area by adopting laser;
6) wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
7) front deposition of AlOxDepositing a silicon nitride passivation film on the back surface of the silicon nitride laminated passivation film;
8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Preferably, in the step 1), the sheet resistance of the boron-doped P-N junction is 100-200 omega/sq, the junction depth is 0.3-0.6um, and the surface concentration is less than 2E19/cm3。
Preferably, in the step 5), the sheet resistance after laser doping is 50-80 omega/sq, the junction depth is 0.7-1.2um, and the surface concentration is more than 4E19/cm3。
Preferably, in step 5), the parameters of laser doping are as follows: the laser line width is 60-120um, the energy is 15-35W, and the scanning speed is 2-10 m/s.
The conventional preparation method is to prepare a P + + layer by adopting a laser doping mode after boron diffusion, and the concentration of a boron source in BSG is limited, so that the concentration in the P + + layer after laser is not high; and require relatively high laser energy bombardment, resulting in the pyramids being ablated. The key points are the preparation process flow and the boron paste printing and laser doping on the BSG, so that the surface concentration and sheet resistance of a P + layer and a P + + layer can be adjusted, the short-wave response of the battery, the metal-semiconductor contact and passivation performance and the like are influenced, and the short-circuit current and the open-circuit voltage of the solar battery are improved.
Therefore, the invention has the following beneficial effects:
(1) the boron paste is printed on the BSG, so that the problem of insufficient B content in the laser-doped BSG is solved, the concentration of a laser-doped boron source is favorably improved, and the beneficial surface concentration is increased;
(2) laser doping is adopted, and the square resistance, junction depth and surface concentration of the heavily doped and lightly expanded regions are adjustable, so that the mutual influence is small.
(3) Printing boron paste and laser doping after the spin-plating are adopted, so that the laser area is prevented from being corroded by spin-plating alkali liquor, the SE area is protected, and the influence of high temperature on the SE area is also avoided;
(4) the boron paste is printed on the BSG, so that the damage of laser energy to the P-N junction can be reduced, and the reduction of the recombination rate is favorable for increasing the open-circuit voltage.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a flow chart of the manufacturing process of the present invention.
In the figure: 1. n-type crystalline silicon; 2. a positive electrode; 3. a negative electrode; 4. SiO 22A layer; 5. p dopes the polycrystalline silicon layer; 6. SiNxA layer; 7. a P + layer; 8. AlO (aluminum oxide)xA layer; 9. a P + + layer.
Detailed Description
The invention is further described with reference to specific embodiments.
General examples
A boron-doped selective emitter battery comprises N-type crystalline silicon 1, two positive electrodes 2 arranged on the front surface of the N-type crystalline silicon 1 and two negative electrodes 3 arranged on the back surface of the N-type crystalline silicon 1, wherein SiO is arranged on the back surface of the N-type crystalline silicon 12 Layer 4 of said SiO2A P-doped polysilicon layer 5 is provided on layer 4. The front surface of the N-type crystalline silicon 1 is sequentially provided with a P + layer 7 and AlOxLayer 8 and SiNxA layer 6; the positive electrode 2 passes through the SiNx layer 6, the AlOx layer 8 and the P + layer 7. And a P + + layer 9 is arranged in a contact area between the positive electrode 2 and the N-type crystalline silicon 1. The back surface of the N-type crystal silicon 1 is sequentially provided with SiO from inside to outside2 Layer 4, P-doped polysilicon layer 5 and SiNxA layer 6; the negative electrode 3 sequentially penetrates through the SiNxA layer 6 and a partial thickness of a P-doped polysilicon layer 5, the negative electrode 3 being in contact with the P-doped polysilicon layer 5. The depth of the negative electrode 3 inserted into the P-doped polysilicon layer 5 accounts for 60-80% of the total thickness of the P-doped polysilicon layer 5. The positive electrode 2 is Ag-Al slurry; the negative electrode 3 is Ag paste.
The preparation method of the boron-doped selective emitter battery
(1) Preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in a diffusion mode and the like, controlling the sheet resistance to be 100-200 omega/sq, the junction depth to be 0.3-0.6um and the surface concentration to be less than 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) printing boron paste at the corresponding position of the metal grid line on the front surface of the chip source and drying, wherein the width of the boron paste printing line is 100-200 mu m;
(5) laser doping is carried out on the boron slurry area by adopting laser, wherein the line width of the laser is 60-120um, the energy is 15-35W, and the scanning speed is 2-10 m/s; controlling the laser rear square resistance to be 50-80 omega/sq, the junction depth to be 0.7-1.2um and the surface concentration to be more than 4E19/cm3；
(6) Wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
(7) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Comparative example 1 (preparation of existing emitter cell)
(1) Preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in diffusion and other modes, controlling the sheet resistance to be 90 omega/sq, controlling the junction depth to be 1.0um and controlling the surface concentration to be 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) removing BSG, PSG and the like by wet chemical cleaning to obtain a semi-finished battery with a clean surface;
(5) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(6) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Example 1
A boron-doped selective emitter battery comprises N-type crystalline silicon 1 and two positive electrodes arranged on the front surface of the N-type crystalline silicon 1The electrode 2 and two negative electrodes 3 arranged on the back surface of the N-type crystalline silicon 1, wherein SiO is arranged on the back surface of the N-type crystalline silicon 12 Layer 4 of said SiO2A P-doped polysilicon layer 5 is provided on layer 4. The front surface of the N-type crystalline silicon 1 is sequentially provided with a P + layer 7 and AlOxLayer 8 and SiNxA layer 6; the positive electrode 2 passes through the SiNx layer 6, the AlOx layer 8 and the P + layer 7. And a P + + layer 9 is arranged in a contact area between the positive electrode 2 and the N-type crystalline silicon 1. The back surface of the N-type crystal silicon 1 is sequentially provided with SiO from inside to outside2Layer 4, P-doped polysilicon layer 5 and SiNxA layer 6; the negative electrode 3 sequentially penetrates through the SiNxA layer 6 and a partial thickness of a P-doped polysilicon layer 5, the negative electrode 3 being in contact with the P-doped polysilicon layer 5. The depth of the negative electrode 3 inserted into the P-doped polysilicon layer 5 accounts for 70% of the total thickness of the P-doped polysilicon layer 5. The positive electrode 2 is Ag-Al slurry; the negative electrode 3 is Ag paste.
The preparation method of the boron-doped selective emitter battery
(1) Preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in diffusion and other modes, controlling the sheet resistance to be 150 omega/sq, controlling the junction depth to be 0.45um and controlling the surface concentration to be less than 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) printing boron paste at the corresponding position of the metal grid line on the front surface of the wafer source and drying, wherein the width of the printed line of the boron paste is 150 um;
(5) laser doping is carried out on the boron slurry area by adopting laser, wherein the line width of the laser is 90um, the energy is 25W, and the scanning speed is 6 m/s; controlling the rear square resistance of the laser to be 65 omega/sq, the junction depth to be 1.0um and the surface concentration to be more than 4E19/cm3；
(6) Wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
(7) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Example 2
A boron-doped selective emitter battery comprises N-type crystalline silicon 1, two positive electrodes 2 arranged on the front surface of the N-type crystalline silicon 1 and two negative electrodes 3 arranged on the back surface of the N-type crystalline silicon 1, wherein SiO is arranged on the back surface of the N-type crystalline silicon 12 Layer 4 of said SiO2A P-doped polysilicon layer 5 is provided on layer 4. The front surface of the N-type crystalline silicon 1 is sequentially provided with a P + layer 7 and AlOxLayer 8 and SiNxA layer 6; the positive electrode 2 passes through the SiNx layer 6, the AlOx layer 8 and the P + layer 7. And a P + + layer 9 is arranged in a contact area between the positive electrode 2 and the N-type crystalline silicon 1. The back surface of the N-type crystal silicon 1 is sequentially provided with SiO from inside to outside2Layer 4, P-doped polysilicon layer 5 and SiNxA layer 6; the negative electrode 3 sequentially penetrates through the SiNxA layer 6 and a partial thickness of a P-doped polysilicon layer 5, the negative electrode 3 being in contact with the P-doped polysilicon layer 5. The depth of the negative electrode 3 inserted into the P-doped polysilicon layer 5 accounts for 60% of the total thickness of the P-doped polysilicon layer 5. The positive electrode 2 is Ag-Al slurry; the negative electrode 3 is Ag paste.
The preparation method of the boron-doped selective emitter battery
(1) Preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in a diffusion mode and the like, controlling the sheet resistance to be 100 omega/sq, controlling the junction depth to be 0.6um and controlling the surface concentration to be less than 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) printing boron paste at the corresponding position of the metal grid line on the front surface of the wafer source and drying, wherein the width of the printed line of the boron paste is 100 um;
(5) carrying out laser doping on the boron slurry area by adopting laser, wherein the line width of the laser is 60um, the energy is 15W, and the scanning speed is 2 m/s; controlling the laser rear square resistance to be 50 omega/sq, the junction depth to be 0.7um and the surface concentration to be more than 4E19/cm3；
(6) Wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
(7) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Example 3
A boron-doped selective emitter battery comprises N-type crystalline silicon 1, two positive electrodes 2 arranged on the front surface of the N-type crystalline silicon 1 and two negative electrodes 3 arranged on the back surface of the N-type crystalline silicon 1, wherein SiO is arranged on the back surface of the N-type crystalline silicon 12 Layer 4 of said SiO2A P-doped polysilicon layer 5 is provided on layer 4. The front surface of the N-type crystalline silicon 1 is sequentially provided with a P + layer 7 and AlOxLayer 8 and SiNxA layer 6; the positive electrode 2 passes through the SiNx layer 6, the AlOx layer 8 and the P + layer 7. And a P + + layer 9 is arranged in a contact area between the positive electrode 2 and the N-type crystalline silicon 1. The back surface of the N-type crystal silicon 1 is sequentially provided with SiO from inside to outside2Layer 4, P-doped polysilicon layer 5 and SiNxA layer 6; the negative electrode 3 sequentially penetrates through the SiNxA layer 6 and a partial thickness of a P-doped polysilicon layer 5, the negative electrode 3 being in contact with the P-doped polysilicon layer 5. The depth of the negative electrode 3 inserted into the P-doped polysilicon layer 5 accounts for 80% of the total thickness of the P-doped polysilicon layer 5. The positive electrode 2 is Ag-Al slurry; the negative electrode 3 is Ag paste.
The preparation method of the boron-doped selective emitter battery
(1) Preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in a diffusion mode and the like, controlling the sheet resistance to be 200 omega/sq, controlling the junction depth to be 0.6um and controlling the surface concentration to be less than 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) printing boron paste at the corresponding position of the metal grid line on the front surface of the wafer source and drying, wherein the printing line width of the boron paste is 200 um;
(5) laser doping is carried out on the boron slurry area by adopting laser, wherein the line width of the laser is 120um, the energy is 35W, and the scanning speed is 10 m/s; controlling the rear square resistance of the laser to be 80 omega/sq, the junction depth to be 1.2um and the surface concentration to be more than 4E19/cm3；
(6) Wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
(7) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Example 4
A boron-doped selective emitter battery comprises N-type crystalline silicon 1, two positive electrodes 2 arranged on the front surface of the N-type crystalline silicon 1 and two negative electrodes 3 arranged on the back surface of the N-type crystalline silicon 1, wherein SiO is arranged on the back surface of the N-type crystalline silicon 12 Layer 4 of said SiO2A P-doped polysilicon layer 5 is provided on layer 4. The front surface of the N-type crystalline silicon 1 is sequentially provided with a P + layer 7 and AlOxLayer 8 and SiNxA layer 6; the positive electrode 2 passes through the SiNx layer 6, the AlOx layer 8 and the P + layer 7. And a P + + layer 9 is arranged in a contact area between the positive electrode 2 and the N-type crystalline silicon 1. The back surface of the N-type crystal silicon 1 is sequentially provided with SiO from inside to outside2Layer 4, P-doped polysilicon layer 5 and SiNxA layer 6; the negative electrode 3 sequentially penetrates through the SiNxA layer 6 and a partial thickness of a P-doped polysilicon layer 5, the negative electrode 3 being in contact with the P-doped polysilicon layer 5. The depth of the negative electrode 3 inserted into the P-doped polysilicon layer 5 accounts for 65% of the total thickness of the P-doped polysilicon layer 5. The positive electrode 2 is Ag-Al slurry; the negative electrode 3 is Ag paste.
The preparation method of the boron-doped selective emitter battery
(1) Preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in a diffusion mode and the like, controlling the sheet resistance to be 125 omega/sq, controlling the junction depth to be 0.4um and controlling the surface concentration to be less than 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) printing boron paste at the corresponding position of the metal grid line on the front surface of the wafer source and drying, wherein the width of the printed line of the boron paste is 120 um;
(5) laser doping is carried out on the boron slurry area by adopting laser, wherein the line width of the laser is 60-120um, the energy is 15-35W, and the scanning speed is 4 m/s; controlling the laser rear square resistance to be 55 omega/sq, the junction depth to be 0.8um and the surface concentration to be more than 4E19/cm3；
(6) Wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
(7) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Example 5
A boron-doped selective emitter battery comprises N-type crystalline silicon 1, two positive electrodes 2 arranged on the front surface of the N-type crystalline silicon 1 and two negative electrodes 3 arranged on the back surface of the N-type crystalline silicon 1, wherein SiO is arranged on the back surface of the N-type crystalline silicon 12 Layer 4 of said SiO2A P-doped polysilicon layer 5 is provided on layer 4. The front surface of the N-type crystalline silicon 1 is sequentially provided with a P + layer 7 and AlOxLayer 8 and SiNxA layer 6; the positive electrode 2 passes through the SiNx layer 6, the AlOx layer 8 and the P + layer 7. And a P + + layer 9 is arranged in a contact area between the positive electrode 2 and the N-type crystalline silicon 1. The back surface of the N-type crystal silicon 1 is sequentially provided with SiO from inside to outside2Layer 4, P-doped polysilicon layer 5 and SiNxA layer 6; the negative electrode 3 sequentially penetrates through the SiNxA layer 6 and a partial thickness of a P-doped polysilicon layer 5, the negative electrode 3 being in contact with the P-doped polysilicon layer 5. The depth of the negative electrode 3 inserted into the P-doped polysilicon layer 5 accounts for 75% of the total thickness of the P-doped polysilicon layer 5. The positive electrode 2 is Ag-Al slurry; the negative electrode 3 is Ag paste.
The preparation method of the boron-doped selective emitter battery
(1) Preparing boron-doped P by adopting an N-type textured silicon wafer and adopting diffusion and other modesN junction, square resistance of 175 omega/sq., junction depth of 0.5um, surface concentration of < 2E19/cm3；
(2) Removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
(3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
(4) printing boron paste at the corresponding position of the metal grid line on the front surface of the wafer source and drying, wherein the width of the boron paste printed line is 180 um;
(5) laser doping is carried out on the boron slurry area by adopting laser, wherein the line width of the laser is 100um, the energy is 30W, and the scanning speed is 8 m/s; controlling the laser rear square resistance to be 75 omega/sq, the junction depth to be 1.1um and the surface concentration to be more than 4E19/cm3；
(6) Wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
(7) depositing a laminated passivation film of AlOx, silicon nitride and the like on the front surface, and depositing a silicon nitride passivation film on the back surface;
(8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
Table 1 items and performance parameters of high efficiency passivated structure cells
Conclusion analysis: it can be seen from the results of examples 1 to 5 that the boron-doped selective emitter cell prepared according to the wafer structure and the preparation parameters of the present invention can adjust the surface concentrations and sheet resistances of the P + layer and the P + + layer, affect the short-wave response, the metal-semiconductor contact and passivation performance, etc., of the cell, increase the short-circuit current and the open-circuit voltage of the solar cell, and prolong the service life of the cell. The parametric performance of examples 1-5 is improved relative to prior art ratio 1, both in cell efficiency and open circuit voltage capability.
From the data of examples 1-5 and comparative example 1, it can be seen that the above requirements can be met in all respects only by the solution within the scope of the claims of the present invention, resulting in an optimized solution and resulting in a boron doped selective emitter cell with optimal performance. And replacement/addition/subtraction of each deposition layer or change of preparation sequence can bring corresponding negative effects.
The raw materials and equipment used in the invention are common raw materials and equipment in the field if not specified; the methods used in the present invention are conventional in the art unless otherwise specified.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and all simple modifications, alterations and equivalents of the above embodiments according to the technical spirit of the present invention are still within the protection scope of the technical solution of the present invention.
Claims (10)
1. The boron-doped selective emitter battery is characterized by comprising N-type crystalline silicon (1), two positive electrodes (2) arranged on the front side of the N-type crystalline silicon (1) and two negative electrodes (3) arranged on the back side of the N-type crystalline silicon (1), wherein SiO is arranged on the back side of the N-type crystalline silicon (1)2Layer (4), said SiO2A P-doped polysilicon layer (5) is provided on the layer (4).
2. The boron-doped selective emitter cell according to claim 1, wherein the front surface of the N-type crystalline silicon (1) is provided with a P + layer (7) and AlO in sequence from inside to outsidexLayer (8) and SiNxA layer (6); the positive electrode (2) penetrates through the SiNx layer (6), the AlOx layer (8) and the P + layer (7).
3. A boron doped selective emitter cell according to claim 2, characterized in that the contact area between the positive electrode (2) and the N-type crystalline silicon (1) is provided with a P + + layer (9).
4. The boron-doped selective emitter cell according to claim 1 or 2, wherein the back surface of the N-type crystalline silicon (1) is provided with a plurality of N-type crystalline silicon layers sequentially from inside to outsideWith SiO2Layer (4), P-doped polysilicon layer (5) and SiNxA layer (6); the negative electrode (3) sequentially penetrates through the SiNxA layer (6) and a partial thickness P-doped polysilicon layer (5), the negative electrode (3) being in contact with the P-doped polysilicon layer (5).
5. A boron doped selective emitter cell according to claim 3, wherein the negative electrode (3) is inserted into the P doped polysilicon layer (5) to a depth of 60-80% of the total thickness of the P doped polysilicon layer (5).
6. The boron doped selective emitter cell according to claim 1, wherein the positive electrode (2) is an Ag-Al paste; the negative electrode (3) is Ag paste.
7. A method for manufacturing a boron doped selective emitter cell according to any of claims 1 to 6, characterized in that it comprises the following manufacturing steps:
1) preparing a boron-doped P-N junction by adopting an N-type textured silicon wafer in modes of diffusion and the like;
2) removing BSG on the back and diffused junctions by adopting chain type single-sided etching, and reserving BSG on the front;
3) preparing a tunneling oxide layer, P-doped polycrystalline silicon and the like by adopting LPCVD equipment, removing the winding-plated polycrystalline silicon by alkali etching, and reserving a front BSG layer and a back PSG layer to obtain a semi-finished battery;
4) printing boron paste at the corresponding position of the metal grid line on the front surface of the chip source and drying, wherein the width of the boron paste printing line is 100-200 mu m;
5) carrying out laser doping on the boron slurry area by adopting laser;
6) wet chemical cleaning is adopted to remove boron slurry, BSG, PSG and the like, and a semi-finished battery with a clean surface is obtained;
7) front deposition of AlOxDepositing a silicon nitride passivation film on the back surface of the silicon nitride laminated passivation film;
8) printing Ag-Al paste on the front surface, printing Ag paste on the back surface, and sintering to obtain the finished battery.
8. The method as claimed in claim 7, wherein in step 1), the sheet resistance of the boron-doped P-N junction is 100-200 Ω/sq, the junction depth is 0.3-0.6 μm, and the surface concentration is < 2E19/cm3。
9. The method as claimed in claim 7, wherein in step 5), the laser doping is performed to obtain a cell with a sheet resistance of 50-80 Ω/sq, a junction depth of 0.7-1.2um, and a surface concentration of > 4E19/cm3。
10. The method as claimed in claim 7, wherein in step 5), the parameters of laser doping are as follows: the laser line width is 60-120um, the energy is 15-35W, and the scanning speed is 2-10 m/s.
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