CN110299422A - A kind of laser boron doping selective emitter TOPCon structure battery and preparation method thereof - Google Patents
A kind of laser boron doping selective emitter TOPCon structure battery and preparation method thereof Download PDFInfo
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- CN110299422A CN110299422A CN201910578339.2A CN201910578339A CN110299422A CN 110299422 A CN110299422 A CN 110299422A CN 201910578339 A CN201910578339 A CN 201910578339A CN 110299422 A CN110299422 A CN 110299422A
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 6
- 229910015845 BBr3 Inorganic materials 0.000 claims description 3
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000001141 propulsive effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of laser boron doping selective emitter TOPCon structure battery and preparation method thereof, method is the following steps are included: carry out cleaning and texturing to N-type silicon chip；In boron diffusion, the P for forming high boron surface concentration is promoted++Layer, without oxidation process；Propulsion is doped to grid region using laser；Through over cleaning, puts back to diffusion furnace and carry out oxidation and form selective emitter；Remove the BSG and P at the back side+Layer, overleaf prepares tunnel oxide and doping film silicon layer；Remove the BSG that front is obtained around the polysilicon and step II of plating generation, double-sided deposition passivation layer and SiNxAntireflective film；Silk-screen printing double-face electrode.The open-circuit voltage of battery not only can be improved in preparation method of the invention, but also the fill factor of battery can be improved, the final transfer efficiency for improving TOPCon solar cell.
Description
Technical field
The invention belongs to photovoltaic technology field, and in particular to a kind of laser boron doping selective emitter TOPCon structure electricity
Pond and preparation method thereof.
Background technique
Improving battery conversion efficiency and reducing battery manufacturing cost is always the target that industry is constantly pursued.It is a large amount of novel
High efficiency cell configuration technology is suggested, and has carried out a large amount of research by lot of domestic and foreign R&D institution and enterprise.Wherein, tunnelling
Oxide passivation layer contacts (Tunnel Oxide Passivating Contacts, TOPCon) solar cell, uses very thin dioxy
The stack membrane of SiClx and heavily doped silicon film is contacted as passivating back, after high annealing, has fabulous inactivating performance
With extremely low contact resistance, high temperature resistance.TOPCon cell photoelectric transformation efficiency has reached 25.8%, and and n-PERT
Double-side cell industry is mutually compatible with, and greatly simplifies battery production technology and cost.
Currently, TOPCon battery industry efficiency is lower, the application of selective emitter can reduce Ag-Al and P++Region
Contact resistance, while reducing P under metal grid lines++The J in region0,met, the open-circuit voltage and fill factor of battery are improved, thus
Improve cell conversion efficiency.Laser doping selective emitter is easily implemented, and complicated masking process is not needed, in p-
It is had also been employed that in PERC battery.Currently, using Pyrex (BSG) to carry out laser doping as doped source, and in the world
One technological difficulties, laser are difficult to the boron doping of BSG entering P+Layer, will lead to P+The surface dopant concentration of layer reduces, and junction depth adds
It is deep.
Summary of the invention
To solve the above-mentioned problems, the present invention provides
The technical solution of the present invention is as follows: a kind of preparation side of laser boron doping selective emitter TOPCon structure battery
Method, comprising the following steps:
I, cleaning and texturing is carried out to N-type silicon chip；
II, in boron diffusion, the P for forming high boron surface concentration is promoted++Layer, without oxidation process；
III, propulsion is doped to grid region using laser；
IV, it through over cleaning, puts back to diffusion furnace and carries out oxidation and form selective emitter；
V, the BSG and P at the back side are removed+Layer, overleaf prepares tunnel oxide and doping film silicon layer；
VI, remove the BSG that front is obtained around the polysilicon and step II of plating generation, double-sided deposition passivation layer and SiNxAnti-reflection
Film；
VII, silk-screen printing double-face electrode.
The P for the high surface concentration that the present invention is formed using propulsion technique++Layer is used as laser doping boron source, by laser doping
And oxidation technology, boron selective emitter is formed, without depositing additional boron source, greatly simplifies selective emitter
The preparation process of TOPCon battery, while being conducive to the reduction of cost；Preparation method through the invention can not only mention
The open-circuit voltage of high battery, and the fill factor of battery can be improved, the final transfer efficiency for improving TOPCon solar cell.
Preferably, the technique propulsive parameter in the step II, when boron is spread are as follows: BBr3N2Flow be 1~
2000sccm, promoting temperature is 700~1200 DEG C, and the propulsion time is 0~10h.
Preferably, the parameter of the laser used in the step III are as follows: power is 1~1000W, scanning speed 0.1
~100m/s, the pulse that wavelength is 1100~200nm or continuous laser light beam.
Preferably, described state in step IV, oxidation technology parameter are as follows: O2Flow is 1~2000sccm, and oxidizing temperature is
700~1200 DEG C, oxidization time is 0~10h.
The present invention also provides the laser boron doping selective emitter TOPCon knots that above-mentioned preparation method is prepared
Structure battery.
Compared with prior art, the beneficial effects of the present invention are embodied in:
(1) selective emitter of the invention is applied, Ag-Al and P can be reduced++The contact resistance in region, reduces simultaneously
P under metal grid lines++Region it is compound, the open-circuit voltage of battery not only can be improved, but also the fill factor of battery can be improved,
The final transfer efficiency for improving TOPCon solar cell；
(2) present invention solves laser and is difficult to the boron doping of BSG entering P+Layer, will lead to P+The surface dopant concentration of layer
The problem of reduction, junction depth is deepened.The P for the high surface concentration that the present invention is formed using propulsion technique++Layer is used as laser doping boron source,
By laser doping and oxidation technology, boron selective emitter is formed；
(3) present invention does not need to deposit additional boron source, greatly simplifies the preparation of selective emitter TOPCon battery
Technical process, meanwhile, process of the present invention is simple, it is at low cost, be suitably applied large-scale production.
Detailed description of the invention
Fig. 1 is the flow chart that the present invention prepares laser boron doping selective emitter TOPCon solar cell；
Fig. 2 is the structural representation for the laser boron doping selective emitter TOPCon solar cell that the present invention is prepared
Figure.
Specific embodiment
Embodiment 1
The preparation method of laser boron doping selective emitter TOPCon solar cell of the invention, includes the following steps,
As shown in Figure 1:
I, carries out making herbs into wool to N-type silicon chip and RCA is cleaned；
II, carries out boron diffusion, wherein BBr3N2Flow 130sccm, propulsion temperature: 900 DEG C；The time: 2h is promoted, is promoted
Form the P of high boron surface concentration++Layer, without oxidation process；
III, uses 532nm green light nanosecond Q-switch laser, and power 28W, scanning speed 20m/s carry out metal grid lines region
Doping promotes；
IV, puts back to diffusion furnace and is aoxidized through over cleaning, the technological parameter of oxidation are as follows: O2Flow is 30sccm, oxidation temperature
Degree is 920 DEG C；Oxidization time is 2h, to form selective emitter；
The BSG and P at the V, removal back side+Layer overleaf prepares Tunnel oxide layer (tunnel oxidation layer) and doping
Membrane silicon layer；
VI, removes front around the BSG of the plating polysilicon generated and step II, and double-sided deposition Passivation layer is (blunt
Change layer) and SiNxAntireflective film；
VII, silk-screen printing front and back electrode.
The laser boron doping selective emitter TOPCon solar cell finally prepared, is shown in Fig. 2.
Claims (5)
1. a kind of preparation method of laser boron doping selective emitter TOPCon structure battery, which is characterized in that including following
Step:
I, cleaning and texturing is carried out to N-type silicon chip；
II, in boron diffusion, the P for forming high boron surface concentration is promoted++Layer, without oxidation process；
III, propulsion is doped to grid region using laser；
IV, it through over cleaning, puts back to diffusion furnace and carries out oxidation and form selective emitter；
V, the BSG and P at the back side are removed+Layer, overleaf prepares tunnel oxide and doping film silicon layer；
VI, remove the BSG that front is obtained around the polysilicon and step II of plating generation, double-sided deposition passivation layer and SiNxAntireflective film；
VII, silk-screen printing double-face electrode.
2. the preparation method of laser boron doping selective emitter TOPCon structure battery as described in claim 1, feature
It is, the technique propulsive parameter in the step II, when boron is spread are as follows: BBr3N2Flow is 1~2000sccm, promotes temperature
It is 700~1200 DEG C, the propulsion time is 0~10h.
3. the preparation method of laser boron doping selective emitter TOPCon structure battery as claimed in claim 1 or 2, special
Sign is, the parameter of the laser used in the step III are as follows: power is 1~1000W, scanning speed is 0.1~100m/s, wave
The pulse of a length of 1100~200nm or continuous laser light beam.
4. special such as according to the preparation method of laser boron doping selective emitter TOPCon structure battery as claimed in claim 3
Sign is, described to state in step IV, oxidation technology parameter are as follows: O2Flow is 1~2000sccm, and oxidizing temperature is 700~1200
DEG C, oxidization time is 0~10h.
5. the laser boron doping selective emitter TOPCon that the preparation method as described in Claims 1 to 4 is any is prepared
Structure battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910578339.2A CN110299422B (en) | 2019-06-28 | 2019-06-28 | Laser boron-doped selective emitter TOPCon structure battery and preparation method thereof |
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|---|---|---|---|
| CN201910578339.2A CN110299422B (en) | 2019-06-28 | 2019-06-28 | Laser boron-doped selective emitter TOPCon structure battery and preparation method thereof |
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| CN110299422A true CN110299422A (en) | 2019-10-01 |
| CN110299422B CN110299422B (en) | 2021-05-28 |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880541A (en) * | 2019-11-14 | 2020-03-13 | 上海交通大学 | Novel-structure n-type crystalline silicon PERT double-sided battery and preparation method thereof |
| CN111524983A (en) * | 2020-04-03 | 2020-08-11 | 常州大学 | Efficient crystalline silicon battery with double-sided selective emitter and preparation method thereof |
| EP3806163A1 (en) * | 2019-10-09 | 2021-04-14 | EEPV Corp. | Solar cell and manufacturing method thereof |
| CN112670353A (en) * | 2020-12-17 | 2021-04-16 | 浙江正泰太阳能科技有限公司 | Boron-doped selective emitter battery and preparation method thereof |
| FR3105583A1 (en) * | 2019-12-18 | 2021-06-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | CRYSTALLINE SILICON SUBSTRATE INCLUDING A STRUCTURED SURFACE |
| AU2020273335B1 (en) * | 2020-09-30 | 2021-09-09 | Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
| CN113948607A (en) * | 2021-08-26 | 2022-01-18 | 浙江正泰太阳能科技有限公司 | Selective diffusion method for preparing N-type selective emitter crystalline silicon battery and application thereof |
| CN114050105A (en) * | 2022-01-13 | 2022-02-15 | 海宁正泰新能源科技有限公司 | TopCon battery preparation method |
| CN115483313A (en) * | 2022-09-20 | 2022-12-16 | 滁州捷泰新能源科技有限公司 | Battery and preparation method thereof |
| CN116864579A (en) * | 2023-09-01 | 2023-10-10 | 拉普拉斯新能源科技股份有限公司 | Preparation method of selective emitter, N-type battery and preparation process thereof |
| CN116885049A (en) * | 2023-09-07 | 2023-10-13 | 武汉帝尔激光科技股份有限公司 | Laser doping method and TOPCON solar cell |
| CN117117043A (en) * | 2023-10-20 | 2023-11-24 | 苏州腾晖光伏技术有限公司 | Method for forming N-type passivation contact battery and manufacturing system thereof |
| CN117199186A (en) * | 2023-09-27 | 2023-12-08 | 淮安捷泰新能源科技有限公司 | Manufacturing method of N-TOPCON battery |
| CN117199190A (en) * | 2023-09-27 | 2023-12-08 | 淮安捷泰新能源科技有限公司 | Manufacturing method of N-TOPCON battery |
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| CN113948607A (en) * | 2021-08-26 | 2022-01-18 | 浙江正泰太阳能科技有限公司 | Selective diffusion method for preparing N-type selective emitter crystalline silicon battery and application thereof |
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| CN116864579B (en) * | 2023-09-01 | 2023-12-29 | 拉普拉斯新能源科技股份有限公司 | Preparation method of selective emitter, N-type battery and preparation process thereof |
| CN116885049A (en) * | 2023-09-07 | 2023-10-13 | 武汉帝尔激光科技股份有限公司 | Laser doping method and TOPCON solar cell |
| CN116885049B (en) * | 2023-09-07 | 2023-11-28 | 武汉帝尔激光科技股份有限公司 | Laser doping method and TOPCON solar cell |
| CN117199186A (en) * | 2023-09-27 | 2023-12-08 | 淮安捷泰新能源科技有限公司 | Manufacturing method of N-TOPCON battery |
| CN117199190A (en) * | 2023-09-27 | 2023-12-08 | 淮安捷泰新能源科技有限公司 | Manufacturing method of N-TOPCON battery |
| CN117117043A (en) * | 2023-10-20 | 2023-11-24 | 苏州腾晖光伏技术有限公司 | Method for forming N-type passivation contact battery and manufacturing system thereof |
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