CN209056506U - It is suitble to the MWT hetero-junction silicon solar cell of scale volume production - Google Patents
It is suitble to the MWT hetero-junction silicon solar cell of scale volume production Download PDFInfo
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- CN209056506U CN209056506U CN201822144652.9U CN201822144652U CN209056506U CN 209056506 U CN209056506 U CN 209056506U CN 201822144652 U CN201822144652 U CN 201822144652U CN 209056506 U CN209056506 U CN 209056506U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of MWT hetero-junction silicon solar cell of suitable scale volume production; battery includes N-type silicon chip; perhaps silicon oxide passivation layer is equipped with the intrinsic amorphous silicon passivation layer of N-type amorphous silicon film layer N-type silicon chip reverse side to the positive intrinsic amorphous silicon passivation layer of N-type silicon chip or silicon oxide passivation layer is equipped with P-type non-crystalline silicon film layer；Cell piece front is equipped with front metal electrode, the back side is equipped with back metal electrode and hole metal electrode, the insulation scribing line being continuously closed is etched with apart from each described hole metal electrode point periphery, insulation scribing line penetrates the TCO transparent conductive film and P-type non-crystalline silicon film layer at the cell piece back side.P-type non-crystalline silicon thin-film emitter is placed into the cell piece back side, electrical leakage problems are not present in the N-type base area of hole metal electrode and side wall in this way, overleaf hole metal electrode point periphery laser ablation insulate the mode isolated p amorphous silicon membrane and TCO transparent conductive film above of scribing line, and prevents the short circuit with back positive electrode region.
Description
Technical field
The utility model relates to a kind of MWT hetero-junction silicon solar cells of suitable scale volume production, are applied to solar cell
The manufacturing.
Background technique
Hetero-junction silicon battery is a kind of efficient photovoltaic cell, and basic structure is as shown in Figure 1, generally use high minority carrier life time
N-type silicon chip, obtain heterogeneous PN junction structure, entire work in conjunction with ultra-thin tunnelling passivation layer and P-type non-crystalline silicon thin-film emitter
Sequence technological temperature is lower (~200 DEG C), ultra thin silicon wafers can be used, volume production efficiency can reach 23% or more, the disadvantage is that front side silver paste
Consumption is high, had not only increased shading loss but also had increased silver-colored cost.And MWT (metal piercing winding) technology is a kind of back-contact sun
Conventional batteries front electrode is moved on to the back side by the mode of battery technology, the transmission of through hole hole metal electrode, effectively reduces silver
Grid line block caused by power loss, improve the utilization rate of incident sunlight and the incident photon-to-electron conversion efficiency of battery.So such as
Fruit, which combines MWT technology and hetero-junction solar cell, can be effectively reduced expensive silver electrode cost while reducing shading damage
It loses, further promotes cell conversion efficiency.But have a it is a key issue that MWT technology will carry out laser opening, for conventional heterogeneous
Junction battery, hole cross section structure is complicated after aperture, exists simultaneously p-type (anode) and N-type (cathode) region, direct hole hole metal
Change and centainly will lead to positive and negative electrode short circuit, therefore need to design and develop one kind and avoid positive and negative anodes short-circuit, and be simply suitble to and it is low at
The MWT hetero-junction solar cell structure and technique of this change, make the needs it is suitable for large-scale production.
Utility model content
Purpose of utility model: aiming at the existing problems and shortcomings of the prior art, the utility model provides a kind of increase equipment
Less, the MWT hetero-junction silicon solar cell of simple process is suitble to the demand of the large-scale production of low cost, big production capacity.
Technical solution: a kind of MWT hetero-junction silicon solar cell of suitable scale volume production, including N-type silicon chip, the N
Type silicon chip tow sides are equipped with one layer of intrinsic amorphous silicon passivation layer or silicon oxide passivation layer；The N-type silicon chip front
Intrinsic amorphous silicon passivation layer or silicon oxide passivation layer be equipped with N-type amorphous silicon film layer, N-type amorphous silicon film layer be equipped with TCO
Transparent conductive film；The intrinsic amorphous silicon passivation layer or silicon oxide passivation layer of the N-type silicon chip reverse side are equipped with P-type non-crystalline silicon
Film layer, P-type non-crystalline silicon film layer are equipped with TCO transparent conductive film；The TCO transparent conductive film, N-type amorphous silicon film layer are intrinsic non-
Crystal silicon passivation layer or silicon oxide passivation layer, N-type silicon chip, intrinsic amorphous silicon passivation layer or silicon oxide passivation layer, p-type amorphous
Silicon film and TCO transparent conductive film constitute MWT hetero-junction silicon solar cell piece from just stacking gradually towards reverse direction；Institute
The hetero-junction silicon solar cell piece front MWT is stated equipped with front metal electrode, the back side is equipped with back metal electrode and hole hole metal electricity
Pole；MWT hetero-junction silicon solar cell on piece is equipped with and the one-to-one hole of front metal number of electrodes and position, hole both ends
Front metal electrode and hole metal electrode are respectively corresponded, front metal electrode is connected to hole metal electrode；Apart from each institute
The insulation scribing line for being etched at hole metal electrode point 0.1~1mm of periphery and being continuously closed is stated, insulation scribing line penetrates the cell piece back side
TCO transparent conductive film and P-type non-crystalline silicon film layer.
Overleaf the mode of hole metal electrode periphery laser ablation insulation scribing line makes the hole metal electrode region and P
Type amorphous silicon membrane and transparent conductive film (TCO) electric isolation above, prevent the short circuit with back positive electrode region, thus
Realize the manufacturing of this MWT hetero-junction silicon solar cell.
The cross section of described hole is round or ellipse, and diameter dimension is 0.05~1mm.
The intrinsic amorphous silicon passivation layer with a thickness of 5~50nm, silicon oxide passivation layer with a thickness of 1~50nm.
The thickness of the P-type non-crystalline silicon film layer and N-type amorphous silicon film layer is 5~50nm.
A kind of preparation method of the MWT hetero-junction silicon solar cell of suitable scale volume production, compared to more conventional hetero-junctions electricity
Pond P-type non-crystalline silicon thin-film emitter is located at cell piece front, and this MWT hetero-junction silicon battery is P-type non-crystalline silicon thin-film emitter
It is placed into the cell piece back side, electrical leakage problems are not present in such hole metal electrode (connection front cathode) and the N-type base area of side wall,
Further overleaf the mode of hole metal electrode point periphery laser ablation insulation scribing line makes hole negative electrode and p-type amorphous
Silicon film electric isolation prevents the short circuit with back positive electrode region.
Method includes the following steps:
(1) using laser N-type crystalline silicon on piece open with the one-to-one hole of front metal number of electrodes and position,
The cross section of hole can be round or ellipse, and the outer diameter of hole is 0.05~1mm；
(2) cleaning and making herbs into wool before carrying out to the silicon wafer after punching, remove the damaging layer in silicon chip surface and hole, reduce light
The recombination rate of raw carrier, while flannelette reduction reflectivity is made in silicon chip surface；
(3) tow sides of the silicon wafer after preceding cleaning is with making herbs into wool deposit respectively one layer of intrinsic amorphous silicon passivation film or
One layer of thin silicon oxide passivation layer is prepared respectively；The general method using PECVD (plasma reinforced chemical vapour deposition) deposits
Intrinsic amorphous silicon passivation film, intrinsic amorphous silicon passivation film is with a thickness of 5~50nm；Using thermal oxide or wet chemical oxidation
Method prepares silicon oxide passivation layer on silicon wafer, and silicon oxide passivation layer is with a thickness of 1~50nm；
(4) then, it is deposited on positive intrinsic amorphous silicon passivation layer or silicon oxide passivation layer by the way of PECVD
N-type non-crystalline silicon layer overleaf deposits P-type non-crystalline silicon layer, N-type amorphous silicon on intrinsic amorphous silicon passivation layer or silicon oxide passivation layer
The thickness of layer and P-type non-crystalline silicon layer is 5~50nm；
(5) further, TCO transparent conductive film layer is deposited respectively in N-type non-crystalline silicon layer and P-type non-crystalline silicon layer, generally adopt
With the modes such as PVD (physical vapour deposition (PVD)) or sputtering；
(6) hole metal electrode and back-side gold are prepared at the cell piece back side using the method that silk-screen printing or steel mesh print
Belong to electrode, a pumping process can be increased after printing near the hole of cell piece front, the electrocondution slurry in hole is allowed uniformly to divide
Cloth is in side wall and hole；
(7) after the drying of cell piece rear electrode, then using silk-screen printing or electric plating method in the preparation of cell piece front
Front metal electrode；
(8) it dries or anneals to form good Ohmic contact；
(9) the laser insulation scribing line being continuously closed near each hole metal electrode point at the cell piece back side is carved
Erosion, general insulation scribing line are etched apart from hole metal electrode point 0.1~1mm of periphery, if the depth of etching penetrate TCO and
P-type non-crystalline silicon thin-film emitter.
The utility model has the advantages that compared with prior art, it is heterogeneous that the utility model provides a kind of MWT for being suitable for scale volume production
Junction battery structure and manufacture craft, method simple practical, equipment investment and lower production costs are suitble to the production of scale to need
It wants.
Detailed description of the invention
Fig. 1 is conventional MWT battery structural schematic diagram；
Fig. 2 is the MWT hetero-junction solar cell structural schematic diagram of the utility model；
1-N type silicon chip, 2- intrinsic amorphous silicon passivation layer or silicon oxide passivation layer, 3-P type amorphous silicon film layer, 4-N type
Amorphous silicon film layer, 5-TCO transparent conductive film, 6- back metal electrode, 7- front metal electrode, 8- hole metal electrode, 9- are exhausted
Edge scribing line.
Specific embodiment
Combined with specific embodiments below, the utility model is furtherd elucidate, it should be understood that these embodiments are merely to illustrate this
Utility model rather than limitation the scope of the utility model, after having read the utility model, those skilled in the art couple
The modification of the various equivalent forms of the utility model falls within the application range as defined in the appended claims.
As shown in Fig. 2, being suitble to the MWT hetero-junction silicon solar cell of scale volume production, including N-type silicon chip 1, N-type silicon substrate
1 tow sides of piece are equipped with one layer of intrinsic amorphous silicon passivation layer or silicon oxide passivation layer 2；N-type silicon chip 1 is positive intrinsic non-
Crystal silicon passivation layer or silicon oxide passivation layer 2 are equipped with N-type amorphous silicon film layer 4, and N-type amorphous silicon film layer 4 is equipped with that TCO is transparent to be led
Electrolemma 5；The intrinsic amorphous silicon passivation layer or silicon oxide passivation layer 2 of 1 reverse side of N-type silicon chip are equipped with P-type non-crystalline silicon film layer 3, P
Type amorphous silicon film layer 3 is equipped with TCO transparent conductive film 5；TCO transparent conductive film 5, N-type amorphous silicon film layer 4, intrinsic amorphous silicon is blunt
Change layer or silicon oxide passivation layer 2, N-type silicon chip 1, intrinsic amorphous silicon passivation layer or silicon oxide passivation layer 2, P-type non-crystalline silicon
Film layer 3 and TCO transparent conductive film 5 constitute MWT hetero-junction silicon solar cell piece from just stacking gradually towards reverse direction,
The hetero-junction silicon solar cell piece front MWT is equipped with front metal electrode 7, and the back side is equipped with back metal electrode 6 and hole hole metal electricity
Pole 8；
MWT hetero-junction silicon solar cell on piece is equipped with and the one-to-one hole of 7 quantity of front metal electrode and position, hole
Hole both ends respectively correspond front metal electrode 7 and hole metal electrode 8, and front metal electrode 7 is connected to hole metal electrode 8；
The insulation scribing line 9 being continuously closed is etched at 8 0.1~1mm of periphery of hole metal electrode, insulation scribing line 9 penetrates battery
The TCO transparent conductive film 5 and P-type non-crystalline silicon thin-film emitter at the piece back side.
Overleaf the mode of 8 periphery laser ablation of hole metal electrode insulation scribing line 9 makes hole metal electrode 8 and P
Type amorphous silicon film layer electric isolation, prevents the short circuit with back positive electrode region, to realize this MWT hetero-junction silicon sun
The manufacturing of battery.
The cross section of hole is round or ellipse, and diameter dimension is 0.05~1mm.
Intrinsic amorphous silicon passivation layer with a thickness of 5~50nm, silicon oxide passivation layer with a thickness of 1~50nm.
The thickness of P-type non-crystalline silicon film layer 3 and N-type amorphous silicon film layer 4 is 5~50nm.
The MWT hetero-junction silicon sun electricity of the suitable scale volume production of the utility model is described below by 2 embodiments
The preparation method in pond:
Embodiment 1
It is suitble to the preparation method of the MWT hetero-junction silicon solar cell of scale volume production, comprising the following specific steps
(1) using solar level N-type monocrystalline or polysilicon chip as substrate；
(2) laser opening is carried out according to the setting layout of the front metal electrode of solar battery, the shape of hole is circle
Cylindricality, diameter is at 100~500 μm；
(3) cleaning and texturing are carried out to the silicon chip surface after aperture using chemical solution；
(4) intrinsic amorphous silicon passivation film, intrinsic amorphous silicon passivation are prepared in the tow sides of silicon wafer with the mode of PECVD
Film layer with a thickness of 5~20nm；
(5) N-type is prepared respectively in the silicon wafer obverse and reverse sides of deposition intrinsic amorphous silicon passivation film layer again with the mode of PECVD
Amorphous silicon membrane and P-type non-crystalline silicon film (that is: N-type amorphous silicon film layer 4 and P-type non-crystalline silicon film layer 3), N-type amorphous silicon membrane and P
Type amorphous silicon membrane thickness is 10~20nm, and the P-type non-crystalline silicon film of the back side (reverse side) is emitter, that is, emitter position
In cell piece back surface；
(6) TCO transparent conductive film is prepared respectively in the silicon wafer obverse and reverse sides of step (5) with the mode of PVD, TCO is transparent to be led
The sheet resistance of electrolemma layer 5 is 20~200 Ω/；
(7) hole silver electrode, conventional back surface metal electrode and front are printed on cell piece using the method for silk-screen printing
Gate line electrode (that is: hole metal electrode 8, back metal electrode 6 and front metal electrode 7), in the positive face of cell piece after printing
Hole nearby increases a pumping process, and the electrocondution slurry in hole is allowed to be evenly distributed in side wall and hole；
(8) it is dried and is annealed in drying oven.Cell piece front and back electrode all forms good Ohmic contact.
(9) overleaf hole electrode nearby carries out laser scribing etching, and the scribing line being continuously closed is along hole electrode periphery
0.1~0.5mm, etching depth are 0.1um~10um.
The MWT heterojunction solar battery of the n type single crystal silicon piece preparation used in the present embodiment after tested, imitate by the conversion of battery
Rate reaches 23.5% or more.
Embodiment 2
The preparation of the utility model comprising the following specific steps
(1) using solar level N-type monocrystalline or polysilicon chip as substrate；
(2) laser opening, hole are carried out from silicon wafer back surface according to the setting layout of the front metal electrode of solar battery
The shape in hole is inverted conical shape, and back surface hole diameter is 250um, and front surface hole diameter is 150um；
(3) cleaning and texturing are carried out to the silicon chip surface after aperture using chemical solution；
(4) HNO is used3Solution or the method for ozone-ultraviolet oxidation are handled in the tow sides of silicon wafer, obtain one layer
Thin compact oxidation layer, with a thickness of 2~10nm；
(5) with the mode of PECVD again silicon wafer just, back two sides prepare N amorphous silicon thin film type respectively and P-type non-crystalline silicon is thin
Film, N-type amorphous silicon membrane and P-type non-crystalline silicon film thickness are 10~20nm, and the P-type non-crystalline silicon film at the back side is emitter,
Namely emitter is located at cell piece back surface；
(6) TCO transparent conductive film is prepared respectively in the silicon wafer obverse and reverse sides of step (5) with the mode of PVD, TCO is transparent to be led
The sheet resistance of electrolemma layer 5 is 20~200 Ω/；
(7) hole silver electrode, conventional back surface metal electrode and front are printed on cell piece using the method for silk-screen printing
Gate line electrode；
(8) it is dried and is annealed in drying oven.Cell piece front and back electrode all forms good Ohmic contact.
(9) overleaf hole electrode nearby carries out laser scribing etching, and the scribing line being continuously closed is along hole electrode periphery
0.1~0.5mm, etching depth are 0.1um~10um.
The MWT heterojunction solar battery of the n type single crystal silicon piece preparation used in the present embodiment after tested, imitate by the conversion of battery
Rate reaches 23.5% or more.
Claims (5)
1. a kind of MWT hetero-junction silicon solar cell of suitable scale volume production, it is characterised in that: including N-type silicon chip, the N
Type silicon chip tow sides are equipped with one layer of intrinsic amorphous silicon passivation layer or silicon oxide passivation layer；The N-type silicon chip front
Intrinsic amorphous silicon passivation layer or silicon oxide passivation layer be equipped with N-type amorphous silicon film layer, N-type amorphous silicon film layer be equipped with TCO
Transparent conductive film；The intrinsic amorphous silicon passivation layer or silicon oxide passivation layer of the N-type silicon chip reverse side are equipped with P-type non-crystalline silicon
Film layer, P-type non-crystalline silicon film layer are equipped with TCO transparent conductive film；The TCO transparent conductive film, N-type amorphous silicon film layer are intrinsic non-
Crystal silicon passivation layer or silicon oxide passivation layer, N-type silicon chip, intrinsic amorphous silicon passivation layer or silicon oxide passivation layer, p-type amorphous
Silicon film and TCO transparent conductive film constitute MWT hetero-junction silicon solar cell piece from just stacking gradually towards reverse direction；
The MWT hetero-junction silicon solar cell piece front is equipped with front metal electrode, and the back side is equipped with back metal electrode and hole
Metal electrode；MWT hetero-junction silicon solar cell on piece is equipped with and the one-to-one hole of front metal number of electrodes and position, hole
Hole both ends respectively correspond front metal electrode and hole metal electrode, and front metal electrode is connected to hole metal electrode；Distance
The insulation scribing line being continuously closed is etched at each described hole metal electrode point 0.1 ~ 1mm of periphery, insulation scribing line penetrates battery
The TCO transparent conductive film and P-type non-crystalline silicon film layer at the piece back side.
2. the MWT hetero-junction silicon solar cell of suitable scale volume production as described in claim 1, it is characterised in that: insulation is drawn
Line etching depth is 0.1um ~ 10um.
3. the MWT hetero-junction silicon solar cell of suitable scale volume production as described in claim 1, it is characterised in that: the hole
The cross section in hole is round or ellipse, and diameter dimension is 0.05 ~ 1mm.
4. the MWT hetero-junction silicon solar cell of suitable scale volume production as described in claim 1, it is characterised in that: described
Levy amorphous silicon passivation layer with a thickness of 5 ~ 50nm, silicon oxide passivation layer with a thickness of 1 ~ 50nm.
5. the MWT hetero-junction silicon solar cell of suitable scale volume production as described in claim 1, it is characterised in that: the p-type
The thickness of amorphous silicon film layer and N-type amorphous silicon film layer is 5 ~ 50nm.
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| CN201822144652.9U CN209056506U (en) | 2018-12-20 | 2018-12-20 | It is suitble to the MWT hetero-junction silicon solar cell of scale volume production |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473492A (en) * | 2018-12-20 | 2019-03-15 | 江苏日托光伏科技股份有限公司 | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production |
| CN111223961A (en) * | 2019-11-27 | 2020-06-02 | 浙江爱旭太阳能科技有限公司 | Novel production method of solar cell string |
-
2018
- 2018-12-20 CN CN201822144652.9U patent/CN209056506U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473492A (en) * | 2018-12-20 | 2019-03-15 | 江苏日托光伏科技股份有限公司 | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production |
| CN111223961A (en) * | 2019-11-27 | 2020-06-02 | 浙江爱旭太阳能科技有限公司 | Novel production method of solar cell string |
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