CN112609169A

CN112609169A - Detachable powder atomic layer deposition device

Info

Publication number: CN112609169A
Application number: CN202011281747.0A
Authority: CN
Inventors: 林俊成; 张容华; 古家诚
Original assignee: Xintianhong Xiamen Technology Co ltd
Current assignee: Xintianhong Xiamen Technology Co ltd
Priority date: 2020-11-16
Filing date: 2020-11-16
Publication date: 2021-04-06

Abstract

The invention provides a detachable powder atomic layer deposition device, which mainly comprises a vacuum cavity, a shaft sealing device and a driving unit, wherein the driving unit is connected with the shaft sealing device, and the vacuum cavity is locked at one end of the shaft sealing device through at least one connecting unit. The driving unit drives the vacuum cavity to rotate through the shaft seal device so as to stir powder in a reaction space of the vacuum cavity, and a thin film with uniform thickness is formed on the surface of the powder. In addition, the vacuum cavity for completing the atomic layer deposition can be detached from the shaft sealing device, so that a user can conveniently take out the powder from the vacuum cavity and clean the vacuum cavity, and the convenience in use is improved.

Description

Detachable powder atomic layer deposition device

Technical Field

The invention relates to a detachable powder atomic layer deposition device, which is convenient for a user to take out powder from a vacuum cavity and clean the vacuum cavity so as to improve the convenience in use.

Background

Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.

Quantum dots (Quantum dots) are nanoparticles of semiconductor materials, and the currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.

The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.

The light generated by a Light Emitting Diode (LED) using quantum dots is close to a continuous spectrum, and has high color rendering property, which is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.

Although the quantum dots have the advantages and characteristics, the quantum dots are easy to agglomerate in the application or manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.

Specifically, when the quantum dots are made into the sealant of the light emitting diode, the agglomeration effect may be generated to reduce the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surface of the quantum dots, which may oxidize the quantum dots and affect the performance or the service life of the quantum dots and the light emitting diode. Defects and dangling bonds (dangling bonds) on the surface of the quantum dot can also cause non-radiative recombination (non-radiative recombination), and the luminous efficiency of the quantum dot is also influenced.

At present, Atomic Layer Deposition (ALD) is mainly used to form a thin film with a thickness of nanometer on the surface of the quantum dot, or form multiple thin films on the surface of the quantum dot to form a quantum well structure.

The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.

Disclosure of Invention

Generally, atomic layer deposition is usually performed in a vacuum environment, and therefore, the atomic layer deposition apparatus is often thick and heavy, which is not easy for a user to handle and operate. In order to solve the above-mentioned problems of the prior art, the present invention provides a detachable atomic layer deposition device for powder, which can detach the vacuum chamber from the shaft sealing device and/or the driving unit after completing the atomic layer deposition process of the powder, thereby facilitating a user to take out the powder in the vacuum chamber and clean the vacuum chamber.

An objective of the present invention is to provide a detachable atomic layer deposition device, which mainly includes a driving unit, a shaft seal device and a vacuum chamber, wherein the driving unit is connected to the shaft seal device, and the other end of the shaft seal device is locked to the vacuum chamber through at least one connecting unit, so that the driving unit can drive the vacuum chamber to rotate through the shaft seal device. After the atomic layer deposition process is finished, the vacuum cavity can be detached from the shaft sealing device, so that a user can take out powder in the vacuum cavity conveniently, and the vacuum cavity is cleaned, so that the convenience in use is improved.

An object of the present invention is to provide a detachable atomic layer deposition device for powder, which can detach a vacuum chamber and powder from a shaft sealing device after completing an atomic layer deposition process, and lock another vacuum chamber with powder on the shaft sealing device for atomic layer deposition of powder, thereby improving the process efficiency.

An objective of the present invention is to provide a detachable atomic layer deposition apparatus, in which a recess is formed at the bottom of a vacuum chamber, and an inner tube of a protruding shaft sealing device is inserted into the recess at the bottom of the vacuum chamber to form a protruding tube in a reaction space of the vacuum chamber. The gas inlet pipeline extends from the inner pipe body to the protruding pipe part, so that non-reaction gas output through the gas inlet pipeline can blow powder in the reaction space, contact points among the powder are reduced, and a film with uniform thickness is formed on the surface of the powder.

An objective of the present invention is to provide a detachable powder atomic layer deposition apparatus, wherein a filter unit is disposed at a bottom of a vacuum chamber, and when a shaft seal device is connected to the vacuum chamber, an exhaust line disposed in the shaft seal device is fluidly connected to a reaction space of the vacuum chamber through the filter unit, and gas in the vacuum chamber is exhausted through the filter unit, so as to prevent powder in the vacuum chamber from being consumed during an exhaust process.

In order to achieve the above object, the present invention provides a detachable atomic layer deposition apparatus, comprising: a shaft seal device; a driving unit connecting the shaft sealing device; a vacuum chamber fixed on the shaft seal device through at least one connection unit and including a reaction space for accommodating a plurality of powders, wherein the drive unit drives the vacuum chamber to rotate through the shaft seal device, and the vacuum chamber is detached from the shaft seal device after the connection unit is unlocked; at least one gas extraction line, which is in fluid connection with the reaction space of the vacuum cavity and is used for extracting a gas in the reaction space; and at least one gas inlet pipeline which is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas or a non-reaction gas to the reaction space, wherein the non-reaction gas is used for blowing powder in the reaction space.

In the detachable atomic layer powder deposition device, the shaft seal is a magnetic fluid shaft seal.

In the detachable atomic layer deposition device, the shaft sealing device includes an outer tube and an inner tube, the outer tube includes a receiving space for receiving the inner tube, and the inner tube includes at least one connecting space for receiving the pumping pipeline and the pumping pipeline.

The detachable powder atomic layer deposition device is characterized in that the driving unit is connected with the vacuum cavity through the outer pipe body and drives the vacuum cavity to rotate.

The detachable atomic layer deposition device for powder comprises an inner tube body, a vacuum cavity body and a gas inlet pipeline, wherein the gas inlet pipeline comprises at least one non-reaction gas conveying pipeline positioned in the connecting space of the inner tube body, is in fluid connection with the reaction space of the vacuum cavity body and is used for conveying non-reaction gas to the reaction space of the vacuum cavity body so as to blow powder in the reaction space.

In the detachable atomic layer deposition device, a bottom of the vacuum chamber includes a recess extending from the bottom of the vacuum chamber to the reaction space for accommodating the inner tube of the protruding shaft sealing device and forming a protruding tube in the reaction space.

The detachable powder atomic layer deposition device also comprises a filter unit positioned in the concave part of the vacuum cavity, and the air pumping pipeline and the air inlet pipeline are in fluid connection with the reaction space of the vacuum cavity through the filter unit.

The detachable atomic layer deposition device comprises a heater and a temperature sensing unit, wherein the heater and the temperature sensing unit are arranged in the inner tube body, the heater is used for heating the connecting space of the inner tube body and the air inlet pipeline, and the temperature sensing unit is used for measuring the temperature of the connecting space of the inner tube body.

In the detachable atomic layer deposition device, a concave part is arranged at the bottom of the vacuum cavity and used for accommodating a convex part of the partial shaft seal device.

The detachable powder atomic layer deposition device is characterized in that the vacuum cavity comprises a cover plate and a cavity, the inner surface of the cover plate covers the cavity to form a reaction space between the cover plate and the cavity, and the inner surface of the cover plate is provided with a monitoring wafer.

The invention has the beneficial effects that: after the atomic layer deposition process of the powder is finished, the vacuum cavity can be dismounted from the shaft seal device and/or the driving unit, so that a user can take out the powder in the vacuum cavity conveniently and clean the vacuum cavity.

Drawings

FIG. 1 is a schematic perspective view of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a shaft sealing device of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.

FIG. 4 is a schematic exploded cross-sectional view of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.

FIG. 5 is an exploded view of a detachable atomic layer deposition apparatus according to another embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a detachable atomic layer deposition apparatus according to another embodiment of the present invention.

Description of reference numerals: 10-a detachable powder atomic layer deposition apparatus; 11-vacuum chamber; 111-a cover plate; 1111-inner surface; 112-a connection unit; 113-a cavity; 115-monitor wafer; 117-bottom; 119-a recess; 12-a reaction space; 121-powder; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 135-convex part; 139-a filtration unit; 14-a gear; 15-a drive unit; 171-a suction line; 173-an air intake line; 175-non-reactive gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier plate; 193-fixed mount; 195-a connecting shaft.

Detailed Description

Referring to fig. 1, fig. 2, fig. 3 and fig. 4, a schematic perspective view, a schematic cross-sectional view and an exploded cross-sectional view of a shaft sealing device of a detachable atomic layer powder deposition apparatus according to an embodiment of the present invention are respectively shown. As shown in the figure, the detachable atomic layer deposition device 10 mainly includes a vacuum chamber 11, a shaft seal device 13 and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber to rotate.

The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (Quantum dots), such as ZnS, CdS, CdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al2O 3). The vacuum chamber 11 may include a cover 111 and a chamber 113, wherein an inner surface 1111 of the cover 111 covers the chamber 113 and forms a reaction space 12 therebetween.

In an embodiment of the present invention, a monitor wafer 115 may be disposed on the inner surface 1111 of the cover plate 111, and the monitor wafer 115 is located in the reaction space 12 when the cover plate 111 covers the chamber 113. When performing atomic layer deposition in the reaction space 12, a thin film is formed on the surface of the monitor wafer 115. In practical applications, the film thickness on the surface of the wafer 115 and the film thickness on the surface of the powder 121 may be further measured and monitored, and the relationship between the two may be calculated. The film thickness on the surface of the monitor wafer 115 may then be measured to convert to a film thickness on the surface of the powder 121.

The shaft sealing device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.

The driving unit 15 is coupled to one end of the shaft seal device 13, and drives the vacuum chamber 11 to rotate through the shaft seal device 13, for example, the outer tube 131 is coupled to the vacuum chamber 11, and drives the vacuum chamber 11 to rotate through the outer tube 131.

The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 while rotating, so that the powder 121 is uniformly heated and contacts with the precursor gas or the non-reactive gas.

In an embodiment of the invention, the driving unit 15 can be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14.

At least one pumping line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.

The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.

The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is configured to deliver a precursor gas or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. For example, the gas inlet line 173 may be connected to a precursor gas storage tank and a non-reactive gas storage tank through a valve set, and may deliver the precursor gas into the reaction space 12 through the valve set, so that the precursor gas deposits on the surface of the powder 121. In practice, the gas inlet line 173 may deliver a carrier gas (carriergas) and precursor gases into the reaction space 12. Non-reactive gases are then delivered into the reaction space 12 through a set of valves and pumped through the pumping line 171 to remove the precursor gases from the reaction space 12. In one embodiment of the present invention, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursor gases into the reaction space 12 through each branch line.

In addition, the gas inlet 173 increases the flow rate of the non-reactive gas supplied to the reaction space 12 and blows the powder 121 in the reaction space 12 through the non-reactive gas, so that the powder 121 is driven by the non-reactive gas to diffuse into various regions of the reaction space 12.

In one embodiment of the present invention, the gas inlet line 173 may include at least one non-reactive gas delivery line 175 fluidly connected to the reaction space 12 of the vacuum chamber 11 and configured to deliver a non-reactive gas to the reaction space 12, for example, the non-reactive gas delivery line 175 may be connected to a nitrogen storage tank through a valve set and deliver nitrogen to the reaction space 12 through the valve set. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12 and deposit a thin film with uniform thickness on the surface of each powder 121.

The gas inlet line 173 and the non-reactive gas delivery line 175 of the detachable atomic layer deposition device 10 are used to deliver non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of non-reactive gas to remove the precursor gas in the reaction space 12, and the non-reactive gas delivery line 175 delivers a larger flow of non-reactive gas to blow the powder 121 in the reaction space 12.

Specifically, the gas inlet line 173 and the non-reactive gas transfer line 175 may transfer the non-reactive gas to the reaction space 12 at different time points, so that the non-reactive gas transfer line 175 may not be provided in practical applications, and the flow rate of the non-reactive gas transferred by the gas inlet line 173 at different time points may be adjusted. When the precursor gas in the reaction space 12 is to be removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is to be blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.

When the driving unit 15 of the present invention drives the outer tube 131 and the vacuum chamber 11 to rotate, the inner tube 133, the pumping line 171, the gas inlet line 173, and/or the non-reactive gas delivery line 175 therein do not rotate, which is beneficial to improving the stability of the non-reactive gas and/or the precursor gas delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175.

The heater 177 heats the connecting space 134 and the inner tube 133, and heats the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175 in the inner tube 133 through the heater 177 to increase the temperature of the gas in the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175. For example, the temperature of the non-reactive gas and/or precursor gas delivered to the reaction space 12 by the gas inlet line 173 may be increased, and the temperature of the non-reactive gas delivered to the reaction space 12 by the non-reactive gas delivery line 175 may be increased. So that the temperature of the reaction space 12 is not greatly reduced or changed when the non-reactive gas and/or the precursor gas enters the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to know the operating state of the heater 177. Of course, another heating device is usually disposed inside, outside or around the vacuum chamber 11, wherein the heating device is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.

In the ald process, the reaction space 12 of the vacuum chamber 11 needs to be kept in a vacuum state, so the vacuum chamber 11 is generally thick and heavy. The shaft seal 13 is used to support and drive the vacuum chamber 11, and is also thick and heavy. In operation, the user needs to remove the vacuum chamber 11 and the shaft seal device 13 from the driving unit 15, so as to take out the powder 121 in the vacuum chamber 11 and clean the vacuum chamber 11. This not only burdens the user, but also may cause the user to be injured or the device to be damaged due to the collision during the operation and cleaning processes.

In order to improve the above problem, the present invention designs the vacuum chamber 11 and the shaft sealing device 13 as two separate members. During the atomic layer deposition, the vacuum chamber 11 is fixed on the shaft sealing device 13, as shown in fig. 3, the vacuum chamber 11 is connected and fixed at one end of the shaft sealing device 13 through at least one connection unit 112, for example, the connection unit 112 may be a screw. The connection unit 112 is a screw, which is only an embodiment of the present invention, and in practical applications, the vacuum chamber 11 can be locked on the shaft seal device 13 through other different types of connection units 112, for example, the connection unit 112 with detachable functions, such as a cylinder joint, a snap mechanism, a tenon, a quick-release device, a screw thread, etc., is used to connect the vacuum chamber 11 and the shaft seal device 13.

In an embodiment of the present invention, the connection unit 112, the vacuum chamber 11 and the shaft sealing device 13 can be three independent components, for example, the connection unit 112 is a screw, and corresponding connection holes are disposed on the vacuum chamber 11 and the shaft sealing device 13. In another embodiment of the present invention, the connection unit 112 can be directly disposed on the vacuum chamber 11 and/or the shaft seal device 13, for example, the vacuum chamber 11 and the shaft seal device 13 are disposed with corresponding cylinder joints and connection holes, tenons and mortises, external threads and internal threads, etc., and the vacuum chamber 11 can be locked on the shaft seal device 13 through the connection unit 112.

The driving unit 15 can drive the vacuum chamber 11 to rotate via the shaft sealing device 13, so as to stir the powder 121 in the reaction space 12 of the vacuum chamber 11. When the vacuum chamber 11 is connected to the shaft seal 13, the pumping line 171, the pumping line 173 and/or the non-reactive gas delivery line 175 in the shaft seal 13 are fluidly connected to the reaction space 12 of the vacuum chamber 11.

After the atomic layer deposition of the powder 121 is completed, the connection unit 112 can be unlocked, and the vacuum chamber 11 can be removed from the shaft sealing device 13, as shown in fig. 4. Since the weight of the vacuum chamber 11 is smaller than the weight of the vacuum chamber 11 plus the shaft seal device 13, the burden of the user to operate or carry the vacuum chamber 11 can be reduced by removing the vacuum chamber 11 from the shaft seal device 13. The vacuum chamber 11 is removed from the shaft seal device 13, so that the operator can conveniently take out the powder 121 which completes the atomic layer deposition in the vacuum chamber 11, clean and maintain the vacuum chamber 11 and/or the shaft seal device 13, and put the new powder 121 into the reaction space 12 of the vacuum chamber 11.

In addition, the detachable atomic layer deposition device 10 of the present invention is also beneficial to improving the efficiency of the atomic layer deposition process. Specifically, a plurality of vacuum chambers 11 may be prepared, and the powder 121 may be placed in each vacuum chamber 11. One of the vacuum chambers 11 is locked on the shaft seal device 13, and atomic layer deposition is performed on the powder 121 in the vacuum chamber 11. After the atomic layer deposition of the powder 121 is completed, the vacuum chamber 11 and the powder 121 are removed from the shaft seal device 13, and another vacuum chamber 11 is fixed on the shaft seal device 13, so that the atomic layer deposition process is performed on the powder 121 in the vacuum chamber 11. The detached vacuum chamber 11 may be placed in a cooling region, and the powder 121 may be taken out of the vacuum chamber 11 after the temperatures of the vacuum chamber 11 and the powder 121 are lowered.

In an embodiment of the present invention, a filtering unit 139 may be disposed on the bottom 117 of the vacuum chamber 11, and when the vacuum chamber 11 is connected to the sealing device 13, the filtering unit 139 on the vacuum chamber 11 covers the inner tube 133 of the sealing device 13, such that the pumping line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner tube 133 are fluidly connected to the reaction space 12 of the vacuum chamber 11 through the filtering unit 139.

By the arrangement of the filter unit 139, it is avoided that the powder 121 in the reaction space 12 is simultaneously extracted and the powder 121 is lost when the gas in the reaction space 12 is extracted by the gas extraction line 171. In addition, the filter unit 139 is disposed on the vacuum chamber 11 instead of the shaft seal device 13, so that the powder 121 can be prevented from scattering outside from the reaction space 12 of the vacuum chamber 11 when the vacuum chamber 11 is removed from the shaft seal device 13.

In an embodiment of the present invention, the bottom 117 of the vacuum chamber 11 may be provided with a recess 119, wherein the filter unit 139 is disposed in the recess 119, and the end of the shaft seal device 13 connected to the vacuum chamber 11 is provided with a corresponding protrusion 135. When connecting the vacuum chamber 11 and the shaft seal device 13, the protrusion 135 of the shaft seal device 13 can be aligned with the recess 119 of the vacuum chamber 11 to complete the alignment of the two, and then the vacuum device 11 is fixed on the shaft seal device 13 through the connecting unit 112.

Furthermore, an O-ring can be further disposed between the concave portion 119 of the vacuum chamber 11 and the convex portion 135 of the shaft seal device 13, for example, the O-ring can be disposed on the concave portion 119 of the vacuum chamber 11 or the convex portion 135 of the shaft seal device 13 to improve the sealing degree of the reaction space 12 in the vacuum chamber 11. In various embodiments, corresponding threads may be disposed on the recess 119 of the vacuum chamber 11 and the protrusion 135 of the shaft seal device 13, wherein the vacuum chamber 11 can rotate relative to the shaft seal device 13 to connect the shaft seal device 13, and then the vacuum chamber 11 is locked on the shaft seal device 13 through the connection unit 112.

In an embodiment of the present invention, the recess 119 may extend from the bottom 117 of the vacuum chamber 11 into the reaction space 12, and the inner tube 133 of the shaft sealing device 13 extends from the accommodating space 132 of the outer tube 131 to the outside and protrudes out of the shaft sealing device 13 and the outer tube 131, as shown in fig. 5. When connecting the vacuum chamber 11 and the shaft seal device 13, the inner tube 133 protruding from the shaft seal device 13 can be inserted into the recess 119, as shown in fig. 6. In addition, when the vacuum chamber 11 is connected to the shaft seal device 13, the inner tube 133 of the shaft seal device 13 extends from the accommodating space 132 of the outer tube 131 to the recess 119 of the vacuum chamber 11 and/or the reaction space 12, so that the inner tube 133 and the recess 119 form a protruding tube 130 in the reaction space 12.

By shortening or adjusting the distance between the gas inlet line 173 and/or the non-reactive gas delivery line 175 and the cover plate 111 through the arrangement of the protruding tube portion 130, the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175 can be transferred to the inner surface 1111 of the cover plate 111 and diffused to various regions of the reaction space 12 through the inner surface 1111 of the cover plate 111, thereby facilitating the blowing of the powder 121 in the reaction space 12.

In an embodiment of the present invention, the detachable atomic layer deposition device 10 may also include a carrier 191 and at least one fixing frame 193, wherein the carrier 191 may be a plate for carrying the driving unit 15, the vacuum chamber 11 and the shaft sealing device 13. For example, the carrier plate 191 is connected to the driving unit 15, and the sealing device 13 and the vacuum chamber 11 are connected through the driving unit 15. In addition, the shaft seal device 13 and/or the vacuum chamber 11 can also be connected to the bearing plate 191 through at least one support frame to improve the stability of the connection.

The bearing plate 191 may be connected to the fixing frame 193 through at least one connecting shaft 195, wherein the number of the fixing frames 193 may be two, and the two fixing frames are respectively disposed on two sides of the bearing plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 by taking the shaft 195 as an axis to change the elevation angles of the driving unit 15, the shaft sealing device 13 and the vacuum chamber 11, so as to form a film with uniform thickness on the surface of each powder 121.

The invention has the advantages that:

after the atomic layer deposition process of the powder is finished, the vacuum cavity can be dismounted from the shaft seal device and/or the driving unit, so that a user can take out the powder in the vacuum cavity conveniently and clean the vacuum cavity.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.

Claims

1. A removable powder atomic layer deposition apparatus, comprising:

a shaft seal device;

a driving unit connected with the shaft seal device;

a vacuum chamber fixed on the shaft seal device through at least one connection unit and including a reaction space for accommodating a plurality of powders, wherein the drive unit drives the vacuum chamber to rotate through the shaft seal device, and the vacuum chamber is detached from the shaft seal device after the connection unit is unlocked;

at least one gas extraction line, which is fluidly connected to the reaction space of the vacuum chamber and is used for extracting a gas in the reaction space; and

at least one gas inlet line fluidly connected to the reaction space of the vacuum chamber and configured to deliver a precursor gas or a non-reactive gas to the reaction space, wherein the non-reactive gas is configured to blow the powder in the reaction space.

2. The apparatus of claim 1, wherein the shaft seal device is a magnetic fluid shaft seal.

3. The apparatus of claim 1, wherein the shaft seal device comprises an outer body and an inner body, the outer body comprises a receiving space for receiving the inner body, and the inner body comprises at least one connecting space for receiving the pumping line and the gas inlet line.

4. The apparatus of claim 3, wherein the driving unit is connected to the vacuum chamber through the outer tube and drives the vacuum chamber to rotate.

5. The apparatus of claim 3, wherein the gas inlet line comprises at least one non-reactive gas delivery line disposed in the connecting space of the inner tube, fluidly connected to the reaction space of the vacuum chamber, for delivering the non-reactive gas to the reaction space of the vacuum chamber to blow the powder in the reaction space.

6. The apparatus of claim 3, wherein a bottom of the vacuum chamber comprises a recess extending from the bottom of the vacuum chamber to the reaction space for receiving the inner tube protruding from the shaft seal and forming a protruding tube in the reaction space.

7. The apparatus of claim 6, further comprising a filter unit disposed in the recess of the vacuum chamber, wherein the pumping line and the gas inlet line are fluidly connected to the reaction space of the vacuum chamber through the filter unit.

8. The apparatus of claim 3, comprising a heater and a temperature sensor unit disposed in the inner tube, wherein the heater is configured to heat the connection space of the inner tube and the gas inlet line, and the temperature sensor unit is configured to measure a temperature of the connection space of the inner tube.

9. The apparatus of claim 1, wherein a bottom of the vacuum chamber is configured with a recess for receiving a portion of a protrusion of the shaft seal.

10. The apparatus of claim 1, wherein the vacuum chamber comprises a lid and a chamber, an inner surface of the lid covers the chamber to form the reaction space therebetween, and a monitor wafer is disposed on the inner surface of the lid.