CN115247258A - Automatic machine table of detachable powder atomic layer deposition device - Google Patents
Automatic machine table of detachable powder atomic layer deposition device Download PDFInfo
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- CN115247258A CN115247258A CN202110455649.2A CN202110455649A CN115247258A CN 115247258 A CN115247258 A CN 115247258A CN 202110455649 A CN202110455649 A CN 202110455649A CN 115247258 A CN115247258 A CN 115247258A
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- vacuum chamber
- atomic layer
- layer deposition
- reaction space
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 116
- 239000000843 powder Substances 0.000 title claims abstract description 58
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 239000002243 precursor Substances 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 15
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 80
- 239000002096 quantum dot Substances 0.000 description 35
- 238000003756 stirring Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
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- 239000002105 nanoparticle Substances 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 3
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- 238000010438 heat treatment Methods 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000007664 blowing Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
Abstract
The invention provides an automatic machine table of a detachable powder atomic layer deposition device, which mainly comprises an atomic layer deposition operation area, the detachable powder atomic layer deposition device, a vacuum cavity placing area and a conveying device, wherein a vacuum cavity of the detachable powder atomic layer deposition device can be detached or connected relative to a shaft seal device. The conveying device can convey the vacuum cavity from the vacuum cavity placing area to the atomic layer deposition operation area, and fix the vacuum cavity on the shaft sealing device so as to carry out atomic layer deposition on powder in the vacuum cavity. The vacuum cavity after deposition can be dismounted by the shaft sealing device, and the vacuum cavity is conveyed to the vacuum cavity placement area by the conveying device so as to carry out the atomic layer deposition process of the automatic powder.
Description
Technical Field
The invention relates to an automatic machine table of a detachable powder atomic layer deposition device, which mainly moves a vacuum cavity between an atomic layer deposition operation area and a vacuum cavity placing area through a conveying device and can carry out atomic layer deposition processing of powder in an automatic mode.
Background
Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.
Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, cdS, cdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.
The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange light or red light, and 2 to 3 nm quantum dots emit blue light or green light, although the color of light depends on the material composition of the quantum dots.
Light generated by Light Emitting Diodes (LEDs) employing quantum dots can approach a continuous spectrum while having high color rendering properties and facilitating improvement of the light emitting quality of the LEDs. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.
Although the quantum dots have the advantages and characteristics, the quantum dots are easy to agglomerate in the application or manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.
In particular, when quantum dots are made into a sealant of a light emitting diode, an agglomeration effect may be generated, thereby reducing the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surfaces of the quantum dots, which may oxidize the quantum dots and affect the performance or service life of the quantum dots and the light emitting diode. Surface defects and dangling bonds (dangling bonds) of the quantum dots may also cause non-radiative recombination (non-radiative recombination), which also affects the luminous efficiency of the quantum dots.
At present, the quantum well structure is formed by forming a thin film with a thickness of nanometer on the surface of the quantum dot through Atomic Layer Deposition (ALD), or forming a plurality of thin films on the surface of the quantum dot.
The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.
Disclosure of Invention
In order to solve the problems of the prior art, the invention provides an automated machine for a detachable powder atomic layer deposition device, which can move a vacuum cavity between an atomic layer deposition operation area and a vacuum cavity placement area through a conveying device and can perform an atomic layer deposition process of powder in an automated manner.
An objective of the present invention is to provide an automated machine for a detachable atomic layer deposition device, which mainly includes at least one atomic layer deposition operation area, at least one vacuum chamber placement area, a detachable atomic layer deposition device, and at least one conveying device. The detachable powder atomic layer deposition device comprises a driving unit, a shaft sealing device and a vacuum cavity, wherein the driving unit is connected with the shaft sealing device and is positioned in an atomic layer deposition working area.
The vacuum cavity can be fixed on the shaft seal device or detached from the shaft seal device, and the detached vacuum cavity is conveyed between the atomic layer deposition operation area and the vacuum cavity placing area through the conveying device. The conveying device can convey the vacuum cavity to the atomic layer deposition working area and fix the vacuum cavity on the shaft sealing device. And then the driving unit can drive the vacuum cavity to rotate through the shaft seal device, and atomic layer deposition is carried out on the powder in the vacuum cavity. In addition, the vacuum cavity body which finishes the atomic layer deposition process can be dismounted from the shaft sealing device, and the dismounted vacuum cavity body is conveyed to the vacuum cavity body placement area through the conveying device.
An objective of the present invention is to provide an automated machine for a detachable atomic layer deposition device, which mainly uses a robot arm to transport a vacuum chamber between at least one atomic layer deposition operation area and at least one vacuum chamber placement area, so as to improve the efficiency and convenience of the atomic layer deposition process.
An objective of the present invention is to provide an automated machine for a detachable atomic layer deposition apparatus, wherein a plurality of operation areas are disposed around a transportation area, wherein the operation areas include at least one atomic layer deposition operation area and at least one vacuum chamber placement area, and a robot arm is disposed in the transportation area. The mechanical arm positioned in the conveying area can rotate relative to each operation area to align one of the operation areas, and is used for conveying the vacuum cavity between the atomic layer deposition operation area and the vacuum cavity placement area of each operation area, so that the volume of an automatic machine table of the detachable powder atomic layer deposition device is reduced, and the working efficiency is improved.
In order to achieve the above object, the present invention provides an automated machine for a detachable atomic layer deposition apparatus, comprising: at least one atomic layer deposition working area; at least one removable powder atomic layer deposition apparatus, comprising: a shaft seal device; the driving unit is connected with the shaft sealing device, wherein the shaft sealing device and the driving unit are positioned in the atomic layer deposition operation area; a vacuum chamber fixed on the shaft seal device through at least one connection unit and including a reaction space for accommodating a plurality of powders, wherein the drive unit drives the vacuum chamber to rotate through the shaft seal device, and the vacuum chamber is dismounted by the shaft seal device after the connection unit is unlocked; at least one gas extraction line, which is in fluid connection with the reaction space of the vacuum cavity and is used for extracting a gas in the reaction space; at least one gas inlet pipeline which is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor gas or a non-reaction gas to the reaction space; at least one vacuum chamber placing region for placing the vacuum chamber; and at least one conveying device for conveying the vacuum chamber between the vacuum chamber placing area and the atomic layer deposition operation area.
The automatic machine table of the detachable powder atomic layer deposition device is characterized in that the vacuum cavity placing area comprises a vacuum cavity feeding placing area and a vacuum cavity discharging placing area, and the transmission device is used for transmitting the vacuum cavity among the vacuum cavity feeding placing area, the vacuum cavity discharging placing area and the atomic layer deposition working area.
The automatic machine table of the detachable powder atomic layer deposition device comprises a detaching device used for releasing the locking of the connecting unit so that the vacuum cavity is separated from the shaft seal device, or used for fastening the connecting unit so that the vacuum cavity is fixed on the shaft seal device.
The automatic machine table of the detachable powder atomic layer deposition device is characterized in that the detaching device is arranged on the conveying device.
The automatic machine table of the detachable powder atomic layer deposition device is characterized in that the shaft sealing device comprises an outer pipe body and an inner pipe body, the outer pipe body comprises a containing space for containing the inner pipe body, the inner pipe body comprises at least one connecting space for containing the air pumping pipeline and the air inlet pipeline, and the driving unit is connected with the vacuum cavity through the outer pipe body and drives the vacuum cavity to rotate.
The automatic machine table of the detachable powder atomic layer deposition device is characterized in that a concave part is arranged at the bottom of the vacuum cavity, the concave part extends to the reaction space from the bottom of the vacuum cavity and is used for accommodating the inner pipe body of the protruding shaft sealing device and forming a protruding pipe part in the reaction space.
The automatic machine table of the detachable powder atomic layer deposition device comprises a filtering unit positioned in a concave part of the vacuum cavity body, and the air pumping pipeline and the air inlet pipeline are in fluid connection with a reaction space of the vacuum cavity body through the filtering unit.
The automatic machine table of the detachable powder atomic layer deposition device comprises a conveying area and a plurality of operation areas, wherein the operation areas are arranged around the conveying area, each operation area comprises an atomic layer deposition operation area and a vacuum cavity placing area, and the conveying device is arranged in the conveying area.
The automatic machine table of the detachable powder atomic layer deposition device comprises at least one feeding and discharging area and a conveying area, wherein the conveying device in the conveying area is used for conveying a vacuum cavity between the feeding and discharging area and an operation area.
The automatic machine table of the detachable powder atomic layer deposition device comprises a plurality of operation areas, a carrier and at least one sliding rail, wherein the operation areas comprise atomic layer deposition operation areas and vacuum cavity placement areas, the operation areas are arranged along a guide rail, and the conveying device is connected with the guide rail through the carrier and moves along the guide rail to convey the vacuum cavity between the operation areas.
The invention has the beneficial effects that: the vacuum cavity is moved between the atomic layer deposition operation area and the vacuum cavity placing area through the conveying device, and the atomic layer deposition process of powder can be carried out in an automatic mode, so that the process efficiency is improved.
Drawings
FIG. 1 is a schematic side view of an automated machine for a detachable atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic perspective view of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 4 is a schematic cross-sectional exploded view of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view illustrating a shaft sealing device of a detachable atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 6 is a schematic diagram of an automated machine for a detachable atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 7 is a schematic diagram illustrating operation of an automated tool for a detachable atomic layer deposition apparatus according to another embodiment of the present invention.
FIG. 8 is a schematic diagram of an automated machine for a detachable atomic layer deposition apparatus according to another embodiment of the present invention.
FIG. 9 is an exploded view of a detachable atomic layer deposition apparatus according to another embodiment of the invention.
FIG. 10 is a top view of an automated tool for a removable atomic layer deposition apparatus according to yet another embodiment of the invention.
FIG. 11 is a top view of an automated tool for a detachable atomic layer deposition apparatus according to another embodiment of the present invention.
Description of reference numerals: 1-an automated machine of a detachable powder atomic layer deposition device; 10-a detachable powder atomic layer deposition apparatus; 100-an automated machine station of a detachable powder atomic layer deposition device; 101-atomic layer deposition working area; 102-a working area; 103-a vacuum chamber placement area; 1031-vacuum chamber feeding and placing area; 1033-vacuum chamber discharge placement area; 105-a conveying device; 107-a transport zone; 109-a feeding and discharging area; 11-vacuum chamber; 111-a cover plate; 1111-inner surface; 112-a connection unit; 113-a cavity; 115-monitor wafer; 117-bottom; 119-a recess; 12-a reaction space; 121-powder; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-an accommodating space; 133-an inner tube; 134-a connection space; 14-a gear; 15-a drive unit; 16-a dismounting device; 171-a suction line; 173-an air intake line; 175-an agitation gas delivery line; 177-a heater; 179-temperature sensing unit; 181-carrier; 183-guide rail.
Detailed Description
Fig. 1 is a schematic side view of an automated machine of the detachable atomic layer powder deposition apparatus according to an embodiment of the present invention, and fig. 2, fig. 3, fig. 4, and fig. 5 are a schematic perspective view, a schematic cross-sectional exploded view, and a schematic cross-sectional view of a shaft seal device of the detachable atomic layer powder deposition apparatus, respectively.
The automated machine 100 of the detachable atomic layer deposition device mainly comprises at least one atomic layer deposition operation area 101, at least one detachable atomic layer deposition device 10, at least one vacuum chamber placing area 103 and at least one conveying device 105, wherein the conveying device 105 can be a robot arm and is configured to move between the atomic layer deposition operation area 101 and the vacuum chamber placing area 103, for example, the atomic layer deposition operation area 101 and the vacuum chamber placing area 103 can be adjacent left and right or up and down, although the adjacent areas are not adjacent, a gap or other components can exist between the atomic layer deposition operation area 101 and the vacuum chamber placing area 103.
Referring to fig. 2 to 5, the detachable atomic layer deposition device 10 mainly includes a vacuum chamber 11, a shaft seal device 13, and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.
The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (Quantum dots), such as ZnS, cdS, cdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al 2O 3). In one embodiment of the present invention, the vacuum chamber 11 may include a cover 111 and a chamber 113, wherein an inner surface 1111 of the cover 111 covers the chamber 113 and forms the reaction space 12 therebetween. Of course, the vacuum chamber 11 including the cover 111 and the chamber 113 is only an embodiment of the invention, and is not limited by the scope of the invention.
In an embodiment of the present invention, a monitor wafer 115 may be disposed on the inner surface 1111 of the cover plate 111, and the monitor wafer 115 is located in the reaction space 12 when the cover plate 111 covers the chamber 113. When performing atomic layer deposition in the reaction space 12, a thin film is formed on the surface of the monitor wafer 115. In practical applications, the film thickness on the surface of the wafer 115 and the film thickness on the surface of the powder 121 may be further measured and monitored, and the relationship between the two may be calculated. The film thickness on the surface of the wafer 115 may then be monitored by metrology to convert to a film thickness on the surface of the powder 121.
In an embodiment of the present invention, the shaft sealing device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed.
The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.
The driving unit 15 is connected to the vacuum chamber 11 through the outer tube 131, and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that the inner tube 133 does not rotate when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate.
The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 during rotation, so as to facilitate the powder 121 to contact with the precursor gas.
In an embodiment of the invention, the driving unit 15 can be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14.
At least one pumping line 171, at least one gas inlet line 173, at least one stirring gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 are fluidly connected to the reaction space 12 of the vacuum chamber 11, as shown in fig. 3-5. In an embodiment of the present invention, the pumping line 171, the gas inlet line 173, the agitation gas supplying line 175, the heater 177 and/or the temperature sensing unit 179 may be disposed within the shaft sealing device 13, for example, within the connection space 134 of the inner body 133 of the shaft sealing device 13.
The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the subsequent atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.
The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for delivering a precursor or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. For example, the gas inlet line 173 may be connected to a precursor storage tank and a non-reactive gas storage tank through a valve set, and deliver the precursor gas into the reaction space 12 through the valve set, so that the precursor gas is deposited on the surface of the powder 121. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursor gas into the reaction space 12. The non-reactive gas is then delivered into the reaction space 12 through a set of valves to remove the precursor gas from the reaction space 12. In one embodiment, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursor gases into the reaction space 12 through each branch line.
In addition, the flow rate of the non-reactive gas supplied to the reaction space 12 through the gas inlet line 173 may be increased, and the powder 121 in the reaction space 12 may be blown by the non-reactive gas, so that the powder 121 may be diffused to various regions of the reaction space 12 by the non-reactive gas.
In one embodiment of the present invention, the gas inlet line 173 may include at least one stirring gas delivery line 175 fluidly connected to the reaction space 12 of the vacuum chamber 11 and configured to deliver the non-reactive gas to the reaction space 12, for example, the stirring gas delivery line 175 may be connected to a nitrogen storage tank through a valve set and deliver the nitrogen gas to the reaction space 12 through the valve set. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12, and to facilitate the deposition of a thin film with a uniform thickness on the surface of each powder 121.
The gas inlet line 173 and the stirring gas delivery line 175 of the detachable atomic layer deposition device 10 are used to deliver the non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of the non-reactive gas to primarily remove the precursor gas in the reaction space 12, and the stirring gas delivery line 175 delivers a larger flow of the non-reactive gas to primarily blow the powder 121 in the reaction space 12.
Specifically, the gas inlet line 173 and the agitating gas supplying line 175 supply the non-reactive gas to the reaction space 12 at different time points, so that the agitating gas supplying line 175 may not be provided in practical use, and the flow rate of the non-reactive gas supplied by the gas inlet line 173 at different time points may be adjusted. When the precursor gas in the reaction space 12 is removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.
In one embodiment of the present invention, a filtering unit 139 may be disposed at one end of the inner pipe 133 connected to the reaction space 12, wherein the gas pumping line 171, the gas pumping line 173 and/or the stirring gas delivering line 175 are fluidly connected to the reaction space 12 via the filtering unit 139, and the gas in the reaction space 12 is pumped out via the filtering unit 139. The filtering unit 139 is mainly used to filter the powder 121 in the reaction space 12 to prevent the powder 121 from entering the air exhaust line 171 during the air exhaust process and causing the loss of the powder 121.
The heater 177 is used for heating the connecting space 134 and the inner tube 133, and the pumping line 171, the gas inlet line 173 and/or the stirring gas delivering line 175 in the inner tube 133 are heated by the heater 177 to increase the temperature of the gas in the pumping line 171, the gas inlet line 173 and/or the stirring gas delivering line 175. For example, the temperature of the non-reactive gas and/or precursor gas delivered to the reaction space 12 by the gas inlet line 173 may be increased, and the temperature of the non-reactive gas delivered to the reaction space 12 by the stirring gas delivery line 175 may be increased. So that the temperature of the reaction space 12 is not greatly reduced or changed when the non-reactive gas and/or the precursor gas enters the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to know the operating state of the heater 177. Of course, another heating device is usually disposed inside, outside or around the vacuum chamber 11, wherein the heating device is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.
When the outer tube 131 and the vacuum chamber 11 are rotated by the driving unit 15, the inner tube 133, the inner pumping line 171, the gas inlet line 173 and/or the stirring gas delivery line 175 do not rotate, and the non-reactive gas and the precursor gas are stably delivered to the reaction space 12.
The vacuum chamber 11 and the shaft seal device 13 of the detachable powder atomic layer deposition device 10 of the present invention are two independent components, wherein the vacuum chamber 11 is connected and fixed at one end of the shaft seal device 13 through at least one connection unit 112, for example, the connection unit 112 can be a screw, a cylinder joint, a fastening mechanism, a tenon, a quick release device, a thread, etc. which have detachable and fixed functions, and can be used to connect the vacuum chamber 11 and the shaft seal device 13. After the connection unit 112 is unlocked, the vacuum chamber 11 can be removed from the shaft seal device 13.
In one embodiment of the present invention, the connection unit 112 can be unlocked by a detaching device 16, so that the vacuum chamber 11 is separated from the shaft seal device 13, or the connection unit 112 can be fastened, so that the vacuum chamber 11 is locked on the shaft seal device 13. For example, when the connection unit 112 is a screw, the detaching device 16 can be an automatic detaching screwdriver, wherein the screwdriver is connected to a motor and drives the screwdriver to detach or lock the screw. In practice, the detaching device 13 may be disposed on the conveying device 105, for example, the conveying device 105 may be a robot arm, and a screw driver may be disposed on the robot arm, wherein the robot arm may detach or lock the screw by the screw driver when transporting the vacuum chamber 11.
In the embodiment of the present invention, the shaft sealing device 13 and/or the driving unit 15 are fixed in the ald working area 101, and the transportation device 105 can drive the detached vacuum chamber 11 to move between the ald working area 101 and the vacuum chamber placement area 103. In one embodiment of the present invention, the atomic layer deposition region 101 and the vacuum chamber placement region 103 are not adjacent, for example, the deposition regions 101 may be placed in the same region, and the vacuum chamber placement regions 103 may be collectively placed in another region. The two zones may be arranged vertically, and the vacuum chamber 11 is transported between the deposition operation zone 101 and the vacuum chamber placement zone 103 of the two zones by the transporting device 105, so as to reduce the floor area of the machine.
Please refer to fig. 1 and fig. 6 to 8, wherein the actions of fig. 1 and fig. 6 to 8 are not in a certain order. In one embodiment of the present invention, the transfer device 105 is configured to hold the vacuum chamber 11 in the vacuum chamber placement region 103, wherein the vacuum chamber 11 is not undergoing the ALD process, as shown in FIG. 6.
The transportation device 105 transports the vacuum chamber 11 from the vacuum chamber placement region 103 to the ald operation region 101, and connects the vacuum chamber 11 and the shaft seal device 13 located in the ald operation region 101 through the connection unit 112. The driving unit 15 can drive the vacuum chamber 11 to rotate via the shaft sealing device 13, so as to perform atomic layer deposition on the powder in the vacuum chamber 11, as shown in fig. 7.
After the atomic layer deposition of the powder is completed, the vacuum chamber 11 can be removed from the shaft sealing device 13, for example, the connection unit 112 is unlocked, and the atomic layer deposition completed vacuum chamber 11 is transported from the atomic layer deposition operation area 101 to the vacuum chamber placement area 103 by the transporting device 105, as shown in fig. 8.
In one embodiment of the present invention, the number of vacuum chamber placement zones 103 may be plural, for example, the vacuum chamber placement zones 103 may include at least one vacuum chamber inlet placement zone 1031 and at least one vacuum chamber outlet placement zone 1033, and the transfer device 105 is used to transfer the vacuum chambers 11 between the vacuum chamber inlet placement zone 1031, the vacuum chamber outlet placement zone 1033, and the atomic layer deposition process zone 101, as shown in fig. 1 and 7. The transport device 105 can transport the vacuum chamber 11 that has completed the atomic layer deposition from the atomic layer deposition process zone 101 to one of the vacuum chamber placement zones 103, such as the vacuum chamber discharge placement zone 1033, and then move the vacuum chamber 11 that has not performed the atomic layer deposition process in the other vacuum chamber placement zone 103 (such as the vacuum chamber feed placement zone 1031) to the atomic layer deposition process zone 101.
In practical applications, the powder 121 in the vacuum chamber 11 requires a processing time for atomic layer deposition, and the transporting device 105 can transport another vacuum chamber 11 that has not undergone atomic layer deposition to the vacuum chamber arrangement area 103, such as the vacuum chamber material placement area 1031. When the transporting device 105 takes out the vacuum chamber 11 having completed the atomic layer deposition from the atomic layer deposition working area 101, the vacuum chamber 11 in the vacuum chamber placing area 103 or the vacuum chamber feeding placing area 1031 may be transported to the atomic layer deposition working area 101, and the vacuum chamber 11 is connected to the shaft sealing device 13.
In another embodiment of the present invention, as shown in fig. 9, a recess 119 may be disposed on the bottom 117 of the vacuum chamber 11, wherein the recess 119 extends from the bottom 117 of the vacuum chamber 11 into the reaction space 12, and the inner tube 133 of the shaft sealing device 13 extends from the accommodating space 132 of the outer tube 131 to the outside and protrudes out of the shaft sealing device 13 and the outer tube 131. When connecting the vacuum chamber 11 and the shaft seal device 13, the inner tube 133 protruding the shaft seal device 13 can be inserted into the recess 119, and the connection unit 112 connects the vacuum chamber 11 and the shaft seal device 13, so that the inner tube 133 and the recess 119 form a protruding tube 130 in the reaction space 12. Furthermore, a filter unit 139 may be arranged in the recess 119 of the vacuum chamber 11.
The distance between the gas inlet line 173 and/or the stirring gas supply line 175 and the cover plate 111 may be shortened or adjusted by the arrangement of the protruding tube part 130 so that the non-reaction gas supplied to the reaction space 12 by the gas inlet line 173 and/or the stirring gas supply line 175 may be transferred to the inner surface 1111 of the cover plate 111 and diffused to various regions of the reaction space 12 through the inner surface 1111 of the cover plate 111 to facilitate the blowing of the powder 121 in the reaction space 12.
In an embodiment of the invention, as shown in fig. 10, the automated machine 1 of the detachable atomic layer deposition apparatus may include a conveying region 107, a plurality of atomic layer deposition operation regions 101 and a plurality of vacuum chamber placement regions 103, wherein the conveying device 105 is disposed in the conveying region 107, and the plurality of atomic layer deposition operation regions 101 and the plurality of vacuum chamber placement regions 103 are disposed around the conveying region 107, so as to convey the vacuum chambers 11 between the plurality of atomic layer deposition operation regions 101 and the plurality of vacuum chamber placement regions 103 through a single conveying device 105.
Specifically, the atomic layer deposition operation area 101 and the vacuum chamber placement area 103 may be defined as an operation area 102, and a plurality of operation areas 102 may be disposed around the transportation area 107. The transfer device 105 may be rotated within the transfer zone 107 and directed toward each of the processing zones 102 to transfer the vacuum chamber 11 between the atomic layer deposition processing zone 101 and the vacuum chamber placement zone 103 of each of the processing zones 102 or to transfer the vacuum chamber 11 between each of the processing zones 102.
In another embodiment of the present invention, as shown in fig. 10, the automated tool 1 of the detachable atomic layer deposition apparatus may comprise at least one material inlet/outlet region 109, wherein the material inlet/outlet region 109 is adjacent to the conveying region 107. The conveying device 105 can convey the vacuum chamber 11 of the material inlet/outlet area 109 to the atomic layer deposition working area 101 or the vacuum chamber placing area 103 in one of the working areas 102, or convey the vacuum chamber 11 of the atomic layer deposition working area 101 or the vacuum chamber placing area 103 in any one of the working areas 102 to the material inlet/outlet area 109.
In another embodiment of the present invention, as shown in fig. 11, a plurality of working areas 102 can be connected in series, and the conveying device 105 is disposed on at least one guide rail 183 through a carrying platform 181. Specifically, a plurality of processing zones 102 may be arranged along a guide 183, wherein the conveyor 105 may be displaceable along the guide 183 and may be adapted to grip and convey the vacuum chamber 11 within each processing zone 102, for example, to convey the vacuum chamber 11 between the atomic layer deposition processing zone 101 and the vacuum chamber placement zone 103 of each processing zone 102, or to convey the vacuum chamber 11 between each processing zone 102. In different embodiments, the work areas 102 connected in series may be disposed on two sides of the guide rail 183, and the conveying device 105 is connected to the stage 181 through a rotating shaft and can rotate relative to the stage 181 to take out the vacuum chamber 11 in the work areas 102 on two sides of the guide rail 183.
The invention has the advantages that:
the vacuum cavity is moved between the atomic layer deposition operation area and the vacuum cavity placing area through the conveying device, and the atomic layer deposition process of powder can be carried out in an automatic mode, so that the process efficiency is improved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a removable powder atomic layer deposition device's automation board which characterized in that includes:
at least one atomic layer deposition working area;
at least one removable powder atomic layer deposition apparatus, comprising:
a shaft seal device;
a driving unit connected to the shaft seal device, wherein the shaft seal device and the driving unit are located in the atomic layer deposition operation area;
a vacuum chamber fixed on the shaft seal device through at least one connection unit and including a reaction space for accommodating a plurality of powders, wherein the drive unit drives the vacuum chamber to rotate through the shaft seal device, and the vacuum chamber is dismounted from the shaft seal device after the connection unit is unlocked;
at least one gas extraction line, which is fluidly connected to the reaction space of the vacuum chamber and is used for extracting a gas in the reaction space;
at least one gas inlet line fluidly connected to the reaction space of the vacuum chamber and configured to deliver a precursor gas or a non-reactive gas to the reaction space; and
at least one vacuum chamber placing region for placing the vacuum chamber; and
at least one conveying device for conveying the vacuum chamber between the vacuum chamber placing area and the atomic layer deposition operation area.
2. The automated machine of claim 1, wherein the vacuum chamber receiving area comprises a vacuum chamber inlet receiving area and a vacuum chamber outlet receiving area, and the transport device is configured to transport the vacuum chamber between the vacuum chamber inlet receiving area, the vacuum chamber outlet receiving area, and the atomic layer deposition station.
3. The automated machine of claim 1, comprising a detaching device for unlocking the connecting unit to separate the vacuum chamber from the shaft sealing device, or for fastening the connecting unit to fix the vacuum chamber on the shaft sealing device.
4. The automated station of claim 3, wherein the disassembling device is disposed on the transporting device.
5. The apparatus of claim 1, wherein the shaft seal device comprises an outer tube and an inner tube, the outer tube comprises a receiving space for receiving the inner tube, the inner tube comprises at least one connecting space for receiving the pumping line and the pumping line, and the driving unit is coupled to the vacuum chamber through the outer tube and drives the vacuum chamber to rotate.
6. The apparatus of claim 5, wherein a bottom of the vacuum chamber comprises a recess extending from the bottom of the vacuum chamber to the reaction space for receiving the inner tube protruding from the shaft seal device and forming a protruding tube in the reaction space.
7. The apparatus of claim 6, comprising a filter unit disposed in the recess of the vacuum chamber, wherein the pumping line and the pumping line are fluidly connected to the reaction space of the vacuum chamber via the filter unit.
8. The automated machine of claim 1, comprising a transport region and a plurality of working regions disposed around the transport region, wherein the working regions comprise the ALD working region and the vacuum chamber placement region, and the transport device is disposed within the transport region.
9. The automated machine of claim 8, comprising at least one feeding/discharging zone adjacent to the transporting zone, wherein the transporting device in the transporting zone is configured to transport the vacuum chamber between the feeding/discharging zone and the working zone.
10. The automated machine of claim 1, comprising a plurality of working zones, a carrier and at least one slide rail, wherein the working zones comprise the atomic layer deposition working zone and the vacuum chamber placement zone, the plurality of working zones are disposed along the guide rail, and the transport device is connected to the guide rail through the carrier and moves along the guide rail to transport the vacuum chamber between the plurality of working zones.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110455649.2A CN115247258A (en) | 2021-04-26 | 2021-04-26 | Automatic machine table of detachable powder atomic layer deposition device |
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| CN202110455649.2A CN115247258A (en) | 2021-04-26 | 2021-04-26 | Automatic machine table of detachable powder atomic layer deposition device |
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| CN115247258A true CN115247258A (en) | 2022-10-28 |
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