CN112663025B - Atomic layer deposition device for powder - Google Patents
Atomic layer deposition device for powder Download PDFInfo
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- CN112663025B CN112663025B CN202011285337.3A CN202011285337A CN112663025B CN 112663025 B CN112663025 B CN 112663025B CN 202011285337 A CN202011285337 A CN 202011285337A CN 112663025 B CN112663025 B CN 112663025B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention provides an atomic layer deposition device for powder, which mainly comprises a vacuum cavity, a shaft seal device and a driving unit. The shaft seal device comprises an outer pipe body and an inner pipe body, wherein the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity, and a protruding pipe part is formed in the reaction space. The driving unit drives the vacuum cavity to rotate through the outer pipe body so as to stir the powder in the reaction space. The ratio of length to width between the protruding pipe and the reaction space is in a specific range, so that the non-reaction gas delivered to the reaction space lifts the powder in the reaction space and diffuses the powder to each area of the reaction space, thereby being beneficial to forming a film with uniform thickness on the surface of the powder.
Description
Technical Field
The invention relates to an atomic layer deposition device for powder, wherein the length-width ratio value of a protruding pipe part in a reaction space and the reaction space is in a specific range, so that non-reaction gas can lift the powder in the reaction space, thereby being beneficial to forming a film with uniform thickness on the surface of the powder.
Background
Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, the nanoparticles being physically and chemically distinct from macroscopic materials. Generally, the physical properties of macroscopic materials are independent of their own size, but nanoparticles are not, and have potential applications in biomedical, optical, and electronic fields.
Quantum dots (Quantum Dot) are nanoparticles of semiconductors, and the semiconductor materials currently studied are II-VI materials, such as ZnS, cdS, cdSe, among which CdSe has been the most attracting attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. When the excited electrons return from the conduction band to the valence band, energy is released by luminescence.
The energy gap of the quantum dot is related to the size, the larger the size of the quantum dot is, the smaller the energy gap is, the light with longer wavelength can be emitted after irradiation, the smaller the size of the quantum dot is, the larger the energy gap is, and the light with shorter wavelength can be emitted after irradiation. For example, a quantum dot of 5 to 6 nm emits orange or red light, while a quantum dot of 2 to 3 nm emits blue or green light, although the light color depends on the material composition of the quantum dot.
Light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, has high color rendering property, and is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dot, so that the quantum dot becomes the development focus of a new generation of light-emitting devices and displays.
Although the quantum dots have the above advantages and characteristics, agglomeration is easily generated during application or manufacturing. In addition, the quantum dot has higher surface activity and is easy to react with air and water vapor, so that the service life of the quantum dot is shortened.
Specifically, when the quantum dots are made into the sealant of the light emitting diode, an agglomeration effect may be generated, and the optical performance of the quantum dots is reduced. In addition, after the quantum dot is manufactured into the sealant of the light emitting diode, external oxygen or water vapor may still pass through the sealant to contact the surface of the quantum dot, so that the quantum dot is oxidized, and the efficiency or the service life of the quantum dot and the light emitting diode are affected. Surface defects and dangling bonds (dangling bonds) of the quantum dots may also cause non-radiative recombination (nonradiative recombination), which also affects the light-emitting efficiency of the quantum dots.
Currently, a nano-thickness thin film is formed on the surface of a quantum dot by atomic layer deposition (atomic layer deposition, ALD), or a multi-layer thin film is formed on the surface of a quantum dot to form a quantum well structure.
The atomic layer deposition can form a film with uniform thickness on the substrate, can effectively control the thickness of the film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas deposited by an atomic layer cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all nanoparticles.
Disclosure of Invention
In order to solve the above-mentioned problems, the present invention provides an atomic layer deposition apparatus for powder, which can sufficiently stir the powder during the atomic layer deposition process, so that the powder is diffused into each region of the reaction space of the vacuum chamber, thereby facilitating the formation of a thin film with uniform thickness on the surface of each powder.
An object of the present invention is to provide an atomic layer deposition apparatus for powder, which mainly includes a driving unit, a shaft seal device and a vacuum chamber, wherein the driving unit is connected to the shaft seal device and drives the vacuum chamber to rotate. The shaft seal device comprises an outer pipe body and an inner pipe body, wherein the inner pipe body is positioned in the accommodating space of the outer pipe body and extends to a reaction space of the vacuum cavity to form a protruding pipe part in the reaction space. The driving unit is connected with the vacuum cavity through the outer pipe body and drives the vacuum cavity to rotate through the outer pipe body. When the driving unit drives the outer tube body and the vacuum cavity body to rotate, the inner tube body can be kept still.
The reaction space has a first length and a first width, the protruding tube portion has a second length and a second width, wherein the ratio of the first length, the second length, the first width and/or the second width is within a specific range, so that the powder in the reaction space is sufficiently and uniformly stirred by the rotation of the vacuum cavity and the non-reaction gas sprayed to the reaction space, and a film with uniform thickness is formed on the surfaces of all the powder in an atomic layer deposition mode.
An object of the present invention is to provide an atomic layer deposition apparatus for powder, wherein the reaction space may be a column with any geometric shape, the first length is the maximum length of the reaction space, and the first width is the maximum width of the reaction space.
In order to achieve the above object, the present invention provides an atomic layer deposition apparatus for powder, comprising: a vacuum chamber including a reaction space for accommodating a plurality of powders; the shaft seal device comprises an outer pipe body and an inner pipe body, wherein the outer pipe body is provided with an accommodating space for accommodating the inner pipe body, the inner pipe body is provided with a connecting space, and the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity and forms a protruding pipe part; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body; at least one pumping pipeline positioned in the connecting space of the inner pipe body and connected with the reaction space of the vacuum cavity in a parallel manner for pumping out a gas in the reaction space; at least one gas inlet line located in the connection space of the inner tube body and fluidly connected to the reaction space of the vacuum chamber body for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space; the reaction space has a first length, the protruding tube part has a second length, the direction of the first length of the reaction space and the direction of the second length of the protruding tube part are parallel to the axis of rotation of the vacuum cavity, and the ratio of the second length to the first length is greater than 0.2 and less than 0.8.
The invention provides an atomic layer deposition device of powder, comprising: a vacuum chamber including a reaction space for accommodating a plurality of powders; the shaft seal device comprises an outer pipe body and an inner pipe body, wherein the outer pipe body is provided with an accommodating space for accommodating the inner pipe body, the inner pipe body is provided with a connecting space, and the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity and forms a protruding pipe part; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body; at least one pumping pipeline positioned in the connecting space of the inner pipe body and connected with the reaction space of the vacuum cavity in parallel for pumping out a gas in the inner reaction space; at least one gas inlet line located in the connection space of the inner tube body and fluidly connected to the reaction space of the vacuum chamber body for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space; the reaction space has a first width and a first length, the direction of the first length of the reaction space is parallel to the rotating axis of the vacuum cavity, the first width is perpendicular to the first length, and the ratio of the first width to the first length of the reaction space is greater than 0.5 and less than 3.
The invention provides an atomic layer deposition device of powder, comprising: a vacuum chamber including a reaction space for accommodating a plurality of powders; the shaft seal device comprises an outer pipe body and an inner pipe body, wherein the outer pipe body is provided with an accommodating space for accommodating the inner pipe body, the inner pipe body is provided with a connecting space, and the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity and forms a protruding pipe part; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body; at least one pumping pipeline positioned in the connecting space of the inner pipe body and connected with the reaction space of the vacuum cavity in a parallel manner for pumping out a gas in the reaction space; at least one gas inlet line located in the connection space of the inner tube body and fluidly connected to the reaction space of the vacuum chamber body for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space; the reaction space has a first width, the protruding tube portion has a second width, the direction of the first width of the reaction space and the direction of the second width of the protruding tube portion are perpendicular to the axis of rotation of the vacuum chamber, and the ratio of the first width to the second width is greater than 1.5 and less than 6.
The powder atomic layer deposition device comprises an air inlet pipeline, a vacuum cavity and a vacuum cavity, wherein the air inlet pipeline comprises at least one non-reactive gas conveying pipeline which is positioned in the connecting space of the inner pipe body, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying non-reactive gas into the reaction space of the vacuum cavity so as to blow the powder in the reaction space.
The atomic layer deposition device for powder, wherein the reaction space is a circular wavy column or a polygonal column, the first length is the maximum length of the reaction space, and the first width is the maximum width of the reaction space.
The atomic layer deposition device for powder is characterized in that a groove is arranged at the bottom of the vacuum cavity, extends to the reaction space from the bottom of the vacuum cavity and is used for accommodating the inner pipe.
The vacuum cavity is fixed on the shaft seal device through at least one fixing unit, and the vacuum cavity is separated from the shaft seal device after the fixing unit is detached.
The beneficial effects of the invention are as follows: the powder can be fully stirred in the atomic layer deposition process, so that the powder fills the reaction space of the whole vacuum cavity, and contact points among the powder are reduced, thereby being beneficial to forming films with uniform thickness on the surfaces of the powder.
Drawings
FIG. 1 is a perspective view schematically showing an atomic layer deposition apparatus for powder according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an embodiment of an atomic layer deposition apparatus for powder according to the present invention.
FIG. 3 is a schematic cross-sectional view of an embodiment of a partial construction of an atomic layer deposition apparatus for powder according to the present invention.
Fig. 4 is a schematic cross-sectional view of another embodiment of the atomic layer deposition apparatus for powder according to the present invention.
Fig. 5 is a schematic exploded view of an atomic layer deposition apparatus for powder according to another embodiment of the present invention.
Reference numerals illustrate: 10-atomic layer deposition of powder; 11-a vacuum cavity; 111-cover plate; 113-a cavity; 115-bottom; 117-grooves; 12-reaction space; 121-powder; 13-a shaft seal device; 130-projecting tube portions; 131-an outer tube body; 132-accommodating space; 133-an inner tube; 134-connection space; 135-a fixed unit; 139-a filtration unit; 14-gear; 15-a drive unit; 171-an extraction line; 173-an intake line; 175-a non-reactive gas delivery line; 177-a heater; 179-a temperature sensing unit; 191-carrier plate; 193-fixing frame; 195-a connecting shaft; a-a first width; b-a first length; c-a second length; d-a second width.
Detailed Description
Please refer to fig. 1 and 2, which are a schematic perspective view and a schematic cross-sectional view of an embodiment of an atomic layer deposition apparatus for powder according to the present invention. As shown in the figure, the atomic layer deposition device 10 for powder mainly includes a vacuum chamber 11, a shaft seal device 13, and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.
The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (II-VI semiconductor materials such as ZnS, cdS, cdSe) and the thin film formed on the Quantum dots may be aluminum oxide (Al 2O 3). The vacuum chamber 11 may include a cover 111 and a chamber 113, wherein the cover 111 is configured to cover the chamber 113 and form a reaction space 12 therebetween.
In an embodiment of the invention, the shaft seal device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow columns. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft sealing device 13 may be a common shaft sealing or a magnetic fluid shaft sealing, and is mainly used for isolating the reaction space 12 of the vacuum chamber 11 from the external space so as to maintain the vacuum of the reaction space 12.
The driving unit 15 is in power connection with the vacuum cavity 11 through the outer pipe 131, and drives the vacuum cavity 11 to rotate through the outer pipe 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that the inner tube 133 will not rotate along with the outer tube 131 and the vacuum chamber 11 driven by the driving unit 15. In an embodiment of the present invention, the driving unit 15 may be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14.
The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In a different embodiment, the driving unit 15 may drive the outer tube 131 and the vacuum chamber 11 to rotate a specific angle in a clockwise direction, and then rotate a specific angle in a counterclockwise direction, for example, the specific angle may be 360 degrees. When the vacuum chamber 11 rotates, the powder 121 in the reaction space 12 is stirred to facilitate the contact between the powder 121 and the precursor gas or the non-reactive gas
At least one pumping line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.
The pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11, and pumps the gas in the reaction space 12 so that the reaction space 12 is in a vacuum state for performing a subsequent atomic layer deposition process. Specifically, the evacuation line 171 may be connected to a pump, and the gas in the reaction space 12 is evacuated by the pump.
The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is configured to deliver a precursor or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. For example, the inlet line 173 may be connected to a precursor reservoir and a non-reactive gas reservoir via a valve assembly and deliver precursor gas into the reaction space 12 via the valve assembly such that the precursor gas deposits the powder 121 surface. In practice, the inlet line 173 may deliver a carrier gas (carrier gas) along with the precursor gas into the reaction space 12. The non-reactive gas is then delivered into the reaction space 12 through the valve assembly and pumped through the pumping line 171 to remove the precursor gas from the reaction space 12. In one embodiment of the present invention, the inlet line 173 may be connected to a plurality of branch lines, and sequentially deliver different precursor gases into the reaction space 12 through each branch line.
In addition, the inlet line 173 increases the flow rate of the non-reactive gas supplied to the reaction space 12 and blows the powder 121 in the reaction space 12 by the non-reactive gas, so that the powder 121 is driven by the non-reactive gas to be diffused into various regions of the reaction space 12.
In one embodiment of the present invention, the inlet line 173 may comprise at least one non-reactive gas delivery line 175, wherein the non-reactive gas delivery line 175 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for delivering a non-reactive gas to the reaction space 12, for example, the non-reactive gas delivery line 175 may be connected to a nitrogen storage tank through a valve assembly and deliver nitrogen to the reaction space 12 through the valve assembly. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the vacuum chamber 11 is driven by the driving unit 15 to rotate, so that the powder 121 in the reaction space 12 can be effectively and uniformly stirred, and a film with uniform thickness can be deposited on the surface of each powder 121.
The gas inlet line 173 and the non-reactive gas delivery line 175 of the atomic layer deposition apparatus 10 for forming a thin film on a powder are used for delivering non-reactive gas to the reaction space 12, wherein the flow rate of the non-reactive gas delivered by the gas inlet line 173 is smaller, and is mainly used for removing the precursor gas in the reaction space 12, and the flow rate of the non-reactive gas delivered by the non-reactive gas delivery line 175 is larger, and is mainly used for blowing the powder 121 in the reaction space 12.
Specifically, since the time point at which the non-reactive gas is supplied to the reaction space 12 by the gas inlet line 173 and the non-reactive gas supply line 175 is different, the non-reactive gas supply line 175 is not provided in actual use, and the flow rate of the non-reactive gas supplied by the gas inlet line 173 at different time points can be adjusted. When the precursor gas in the reaction space 12 is to be removed, the flow rate of the non-reactive gas supplied to the reaction space 12 from the inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is to be blown, the flow rate of the non-reactive gas supplied to the reaction space 12 from the inlet line 173 is increased.
The heater 177 is used for heating the connection space 134 and the inner tube 133, and heating the gas exhaust line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner tube 133 by the heater 177 to increase the temperature of the gas in the gas exhaust line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175. For example, the temperature of the non-reactive gas and/or precursor gas delivered to the reaction space 12 by the inlet line 173 may be increased, and the temperature of the non-reactive gas delivered to the reaction space 12 by the non-reactive gas delivery line 175 may be increased. So that the non-reactive gas and/or the precursor gas does not cause a significant drop or change in the temperature of the reaction space 12 when entering the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to determine the working state of the heater 177. Of course, another heating means is usually provided inside, outside or around the vacuum chamber 11, wherein the heating means is adjacent to or in contact with the vacuum chamber 11 and serves to heat the vacuum chamber 11 and the reaction space 12.
In the embodiment of the present invention, the inner tube 133 of the shaft seal device 13 extends from the accommodating space 132 of the outer tube 131 to the reaction space 12 of the vacuum chamber 11, wherein the inner tube 133 in the reaction space 12 is defined as a protruding tube 130. In addition, the exhaust line 171, the gas inlet line 173, the non-reactive gas delivery line 175, the heater 177 and/or the temperature sensing unit 179, which are located in the connection space 134 of the inner tube body 133, are also located in the protruding tube portion 130. The distance between the inlet line 173 and/or the non-reactive gas delivery line 175 and the cover plate 111 can be shortened or adjusted by the provision of the protruding pipe 130, so that the non-reactive gas delivered to the reaction space 12 by the inlet line 173 and/or the non-reactive gas delivery line 175 is transferred to the cover plate 111 and diffused to various regions of the reaction space 12 through the cover plate 111.
In one embodiment of the present invention, a filtering unit 139 is disposed at one end of the protruding pipe 130, wherein the gas pumping line 171 is fluidly connected to the reaction space 12 through the filtering unit 139, and pumps the gas in the reaction space 12 through the filtering unit 139. The filtering unit 139 is mainly used for filtering the powder 121 in the reaction space 12 to avoid the powder 121 from entering the gas exhaust line 171 during the gas exhaust process, thereby causing the powder 121 to be lost.
As shown in fig. 2, the reaction space 12 in the vacuum chamber 11 is approximately cylindrical in shape and has a first width a and a first length b. For example, when the reaction space 12 is a cylinder, the first width a is the diameter of the cylinder, and the first length b is the height of the cylinder in the axial direction. In addition, the protruding tube 130 also has an appearance similar to a cylinder, and has a second width d and a second length c, wherein the second width d is a diameter of the cylinder, and the second length c is a protruding height of the cylinder in the axial direction.
The present invention is mainly to transfer the non-reactive gas to the reaction space 12 by the rotation of the vacuum chamber 11 in cooperation with the non-reactive gas transfer line 175, so as to sufficiently and uniformly stir the powder 121 in the reaction space 12.
The inventors believe that the uniformity of the powder 121 in the reaction space 12 when it is stirred is related to the ratio of the reaction space 12 of the vacuum chamber 11 to the protruding tube portion 130 of the shaft seal device 13. Therefore, the inventors have found out the optimal ratio range of the length and width of the reaction space 12 and/or the protruding tube 130 after many attempts and experiments, so that the powder 121 in the vacuum chamber 11 can uniformly diffuse in the reaction space 12 and form a thin film with uniform thickness on the surface of the powder 121.
In an embodiment of the present invention, the direction of the first length b of the reaction space 12 and the second length c of the protruding tube portion 130 is parallel to the axis of rotation of the vacuum chamber 11, wherein the ratio of the second length c of the protruding tube portion 130 to the first length b of the reaction space 12 is greater than 0.2 and less than 0.8.
In an embodiment of the present invention, the direction of the first length b of the reaction space 12 is parallel to the axis of rotation of the vacuum chamber 11, and the first width a of the reaction space 12 is perpendicular to the first length b, wherein the ratio of the first width a to the first length b of the reaction space 12 is greater than 0.5 and less than 3.
In an embodiment of the present invention, the directions of the first width a of the reaction space 12 and the second width d of the protruding tube 130 are perpendicular to the axis of rotation of the vacuum chamber 11, wherein the ratio of the first width a of the reaction space 12 to the second width d of the protruding tube 130 is greater than 1.5 and less than 6.
In one embodiment of the present invention, the first width a of the reaction space 12 may be 160mm to 230mm; the first length b of the reaction space 12 may be 80mm to 90mm; the second width d of the protruding tube portion 130 may be 40mm to 60mm; and the second length c of the protruding tube part 130 may be 40mm to 60mm. Of course, the length and width of the reaction space 12 and the protruding tube 130 are only one embodiment of the present invention, and are not limiting to the scope of the present invention.
In practical application, the first width a, the first length b, the second length c and the second width d of the reaction space 12 and the protruding tube 130 can be changed according to the requirement, so long as the ratio of the widths and/or the lengths of the reaction space 12 and/or the protruding tube 130 is within the range of the above embodiment, the powder 121 in the reaction space 12 can be sufficiently and uniformly stirred by the rotation of the vacuum chamber 11 and the non-reactive gas sprayed to the reaction space 12, and a film with uniform thickness can be formed on the surfaces of all the powders 121 in an atomic layer deposition manner.
In the above embodiment of the present invention, the reaction space 12 and the protruding tube 130 are mainly used as cylinders, but the shape of the reaction space 12 and the protruding tube 130 is not limited to the cylinder in practical application, for example, the reaction space 12 is a circular wavy column or a polygonal column. As shown in fig. 4, the cover 111 and/or the inner surface of the cavity 113 may be provided with at least one recess or protrusion of any geometric shape to facilitate the diffusion of the powder 121 in the reaction space 12. In this case, the first width a of the reaction space 12 is defined as the maximum width within the reaction space 12, and the first length b is defined as the maximum length within the reaction space 12.
In an embodiment of the invention, the atomic layer deposition apparatus 10 for powder may also include a carrier 191 and at least one fixing frame 193, wherein the carrier 191 may be a plate body for carrying the driving unit 15, the vacuum chamber 11 and the shaft sealing device 13. For example, the carrier plate 191 is connected to the driving unit 15, and is connected to the shaft sealing device 13 and the vacuum chamber 11 via the driving unit 15. In addition, the shaft sealing device 13 and/or the vacuum chamber 11 may be connected to the bearing plate 191 through at least one supporting frame to improve the stability of the connection.
The bearing plate 191 may be connected to the fixing frames 193 through at least one connecting shaft 195, wherein the number of the fixing frames 193 may be two, and the fixing frames are respectively disposed on two sides of the bearing plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 with the connecting shaft 195 as the axis to change the elevation angles of the driving unit 15, the shaft seal device 13 and the vacuum chamber 11, so as to facilitate forming films with uniform thickness on the surfaces of the powders 121.
In an embodiment of the present invention, as shown in fig. 5, the shaft seal device 13 and the vacuum chamber 11 may be two independent and detachable components, wherein the bottom 115 of the vacuum chamber 11 and the shaft seal device 13 may be provided with corresponding connecting holes, and the fixing unit 135 may pass through the connecting holes of the two components to fix the vacuum chamber 11 on the shaft seal device 13. After the fixing unit 135 is removed, the vacuum chamber 11 can be separated from the shaft sealing device 13. Through such a detachable mechanism, it is advantageous for a user to detach the vacuum chamber 11 from the shaft sealing device 13, take out the powder 121 in the vacuum chamber 11 after atomic layer deposition, and clean the vacuum chamber 11. In practical application, the vacuum chamber 11 after completing the atomic layer deposition process can be detached from the shaft seal device 13, and another vacuum chamber 11 to be subjected to the atomic layer deposition process is fixed on the shaft seal device 13, so as to improve the efficiency of the process.
In addition, a groove 117 may be formed at the bottom 115 of the vacuum chamber 11, wherein the groove 117 extends from the bottom 115 of the vacuum chamber 11 into the reaction space 12, and the inner tube 133 of the shaft seal device 13 may be inserted into the groove 117 to form the protruding tube 130 in the reaction space 12 of the vacuum chamber 11.
The invention has the advantages that:
the powder can be fully stirred in the atomic layer deposition process, so that the powder fills the reaction space of the whole vacuum cavity, and contact points among the powder are reduced, thereby being beneficial to forming films with uniform thickness on the surfaces of the powder.
The foregoing description is only a preferred embodiment of the present invention and is not intended to limit the scope of the invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims should be embraced by the claims.
Claims (10)
1. An atomic layer deposition apparatus for powder, comprising:
a vacuum chamber including a reaction space for accommodating a plurality of powders;
the shaft seal device comprises an outer pipe body and an inner pipe body, wherein the outer pipe body is provided with an accommodating space for accommodating the inner pipe body, and the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity and forms a protruding pipe part;
the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body;
at least one pumping pipeline, which is positioned in the inner tube and is in fluid connection with the reaction space of the vacuum cavity, for pumping out a gas in the reaction space; a kind of electronic device with high-pressure air-conditioning system
At least one gas inlet line located in the inner tube and fluidly connected to the reaction space of the vacuum chamber for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space;
the reaction space has a first length, the protruding tube part has a second length, the direction of the first length of the reaction space and the direction of the second length of the protruding tube part are parallel to the rotating axis of the vacuum cavity, and the ratio of the second length to the first length is more than 0.2 and less than 0.8.
2. The atomic layer deposition apparatus according to claim 1, wherein the reaction space is a circular wavy column or a polygonal column, and the first length is a maximum length in the reaction space.
3. The atomic layer deposition apparatus according to claim 1, wherein a bottom of the vacuum chamber is provided with a groove extending from the bottom of the vacuum chamber to the reaction space for accommodating the inner tube, and the vacuum chamber is fixed to the shaft sealing device by at least one fixing unit, and the vacuum chamber is separated from the shaft sealing device after the fixing unit is removed.
4. The atomic layer deposition apparatus according to claim 1, wherein the gas inlet line comprises at least one non-reactive gas delivery line within the inner tube, fluidly connected to the reaction space of the vacuum chamber, and configured to deliver the non-reactive gas into the reaction space of the vacuum chamber to blow the powder within the reaction space.
5. An atomic layer deposition apparatus for powder, comprising:
a vacuum chamber including a reaction space for accommodating a plurality of powders;
the shaft seal device comprises an outer pipe body and an inner pipe body, wherein the outer pipe body is provided with an accommodating space for accommodating the inner pipe body, and the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity and forms a protruding pipe part;
the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body;
at least one pumping pipeline, which is positioned in the inner tube and is in fluid connection with the reaction space of the vacuum cavity, for pumping out a gas in the reaction space; a kind of electronic device with high-pressure air-conditioning system
At least one gas inlet line located in the inner tube and fluidly connected to the reaction space of the vacuum chamber for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space;
the reaction space has a first width and a first length, the direction of the first length of the reaction space is parallel to the rotation axis of the vacuum cavity, the first width is perpendicular to the first length, and the ratio of the first width to the first length of the reaction space is greater than 0.5 and less than 3.
6. The atomic layer deposition apparatus according to claim 5, wherein the reaction space is a circular wavy column or a polygonal column, the first length is a maximum length of the reaction space, and the first width is a maximum width of the reaction space.
7. The atomic layer deposition apparatus according to claim 5, wherein an outer surface of the vacuum chamber includes a groove extending from the outer surface of the vacuum chamber to the reaction space for accommodating the inner tube, and the vacuum chamber is locked to the shaft sealing device by at least one fixing unit, and the vacuum chamber is separated from the shaft sealing device after the fixing unit is removed.
8. An atomic layer deposition apparatus for powder, comprising:
a vacuum chamber including a reaction space for accommodating a plurality of powders;
the shaft seal device comprises an outer pipe body and an inner pipe body, wherein the outer pipe body is provided with an accommodating space for accommodating the inner pipe body, and the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity and forms a protruding pipe part;
the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the outer pipe body;
at least one pumping pipeline, which is positioned in the inner tube and is in fluid connection with the reaction space of the vacuum cavity, for pumping out a gas in the reaction space; a kind of electronic device with high-pressure air-conditioning system
At least one gas inlet line located in the inner tube and fluidly connected to the reaction space of the vacuum chamber for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for blowing the powder in the reaction space;
the reaction space has a first width, the protruding tube part has a second width, the direction of the first width of the reaction space and the direction of the second width of the protruding tube part are perpendicular to the rotation axis of the vacuum cavity, and the ratio of the first width to the second width is more than 1.5 and less than 6.
9. The atomic layer deposition apparatus according to claim 8, wherein the reaction space is a circular wavy column or a polygonal column, and the first width is a maximum width of the reaction space.
10. The atomic layer deposition apparatus according to claim 8, wherein the outer surface of the vacuum chamber includes a groove extending from the outer surface of the vacuum chamber to the reaction space and accommodating the inner tube, and the vacuum chamber is locked to the shaft sealing device by at least one fixing unit, and the vacuum chamber is separated from the shaft sealing device after the fixing unit is removed.
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| CN107502873A (en) * | 2017-09-30 | 2017-12-22 | 华中科技大学无锡研究院 | A kind of powder coats apparatus for atomic layer deposition |
| WO2019098289A1 (en) * | 2017-11-15 | 2019-05-23 | 国立大学法人山形大学 | Metal oxide thin film formation apparatus and metal oxide thin film formation method |
| KR20200098274A (en) * | 2019-02-12 | 2020-08-20 | (주)아이작리서치 | Device for atomic layer depositing on powder |
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| US9951419B2 (en) * | 2011-09-03 | 2018-04-24 | Ying-Bing JIANG | Apparatus and method for making atomic layer deposition on fine powders |
| US10516169B2 (en) * | 2015-11-12 | 2019-12-24 | Sonata Scientific LLC | Apparatus and method for coating bulk quantities of solid particles |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502873A (en) * | 2017-09-30 | 2017-12-22 | 华中科技大学无锡研究院 | A kind of powder coats apparatus for atomic layer deposition |
| WO2019098289A1 (en) * | 2017-11-15 | 2019-05-23 | 国立大学法人山形大学 | Metal oxide thin film formation apparatus and metal oxide thin film formation method |
| KR20200098274A (en) * | 2019-02-12 | 2020-08-20 | (주)아이작리서치 | Device for atomic layer depositing on powder |
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