CN112695296B

CN112695296B - Atomic layer deposition device for particles

Info

Publication number: CN112695296B
Application number: CN202011280464.4A
Authority: CN
Inventors: 林俊成; 张容华; 古家诚; 郭大豪
Original assignee: Xintianhong Xiamen Technology Co ltd
Current assignee: Xintianhong Xiamen Technology Co ltd
Priority date: 2020-11-16
Filing date: 2020-11-16
Publication date: 2022-05-27
Anticipated expiration: 2040-11-16
Also published as: CN112695296A

Abstract

The invention provides a particle atomic layer deposition device which mainly comprises a vacuum cavity, a shaft seal device and a driving unit, wherein the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate. The vacuum chamber comprises a reaction space for containing a plurality of particles, wherein the reaction space is a polygonal column or a circular wavy column. The gas inlet pipeline is used for conveying precursor gas and non-reaction gas to the reaction space, and particles in the reaction space can be effectively stirred by the non-reaction gas by matching with the special shape of the reaction space, so that a film with uniform thickness can be formed on the surface of the particles by an atomic layer deposition process.

Description

Atomic layer deposition device for particles

Technical Field

The invention relates to an atomic layer deposition device of particles, wherein the reaction space of a vacuum cavity is a polygonal column or a circular wavy column, so that non-reaction gas conveyed to the vacuum cavity can effectively stir the particles and a film with uniform thickness can be formed on the surface of the particles.

Background

Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and thus have potential applications in biomedical, optical, and electronic fields.

Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.

The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.

The light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, and has high color rendering property, which is beneficial to improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.

Although the quantum dots have the advantages and characteristics described above, they are easily agglomerated during the manufacturing process. In addition, the quantum dots have higher surface activity and are easy to react with air and moisture, so that the service life of the quantum dots is shortened.

Specifically, in the process of manufacturing the quantum dots as the sealant of the light emitting diode, an agglomeration effect may be generated, thereby reducing the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surface of the quantum dots, which may oxidize the quantum dots and shorten the performance or service life of the quantum dots and the light emitting diode. In addition, surface defects and dangling bonds (dangling bonds) of quantum dots can also cause nonradiative recombination.

Currently, the quantum well structure is formed by forming a thin film with a thickness of nanometer on the surface of the quantum dot by Atomic Layer Deposition (ALD), or forming a plurality of thin films on the surface of the quantum dot.

The atomic layer deposition can form a film with uniform thickness on the substrate, can effectively control the thickness of the film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursor gas for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.

Disclosure of Invention

In order to solve the above-mentioned problems of the prior art, the present invention provides an atomic layer deposition apparatus for particles, which is mainly designed by a special shape of a reaction space, so that a non-reactive gas input into the reaction space can sufficiently stir the particles, thereby facilitating the formation of a thin film with a uniform thickness on the surface of each particle by an atomic layer deposition process.

An objective of the present invention is to provide an atomic layer deposition apparatus for particles, which mainly includes a driving unit, a shaft seal device and a vacuum chamber, wherein the driving unit is connected to the vacuum chamber through the shaft seal device and drives the vacuum chamber to rotate. The vacuum chamber comprises a reaction space for containing a plurality of particles, wherein the reaction space is a polygonal column or a circular wavy column. When the vacuum cavity rotates and non-reaction gas is conveyed to the reaction space, the particles in the reaction space can be stirred sufficiently and uniformly, so that the agglomeration phenomenon of the particles is avoided, and a film with uniform thickness is formed on the surface of each particle.

An objective of the present invention is to provide an atomic layer deposition apparatus for particles, which mainly includes at least one pumping line, at least one gas inlet line, at least one non-reactive gas delivery line, at least one heater and/or at least one temperature sensing unit disposed in a shaft sealing apparatus. The pumping line is used for pumping out gas in the reaction space, and the gas inlet line is used for conveying precursor gas and/or non-reaction gas to the reaction space so as to form a film on the surface of the particles. When the atomic layer deposition is carried out, the vacuum cavity is driven to rotate through the driving unit, non-reaction gas can be conveyed to the vacuum cavity through the gas inlet pipeline or the non-reaction gas conveying pipeline, and the particles are stirred and diffused to all areas in the reaction space by matching with the special shape of the reaction space, so that a film with uniform thickness can be formed on the surface of each particle.

An objective of the present invention is to provide an atomic layer deposition apparatus for particles, which mainly includes a driving unit, a shaft seal device and a vacuum chamber, wherein the driving unit is connected to the vacuum chamber through the shaft seal device and drives the vacuum chamber to rotate. The vacuum cavity comprises a cover plate and a cavity body, and when the cover plate covers the cavity body, a reaction space of a polygonal columnar body or a circular wavy columnar body is formed between the cover plate and the cavity body, so that each region for diffusing particles in the reaction space is facilitated.

In order to achieve the above object, the present invention provides an atomic layer deposition apparatus for depositing particles, comprising: a vacuum chamber including a reaction space for accommodating a plurality of particles, wherein the reaction space is a polygonal column; a shaft seal device; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the shaft seal device so as to stir particles in the reaction space; at least one gas extraction line, which is in fluid connection with the reaction space of the vacuum cavity and is used for extracting a gas in the reaction space; and at least one gas inlet pipeline which is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor or a non-reaction gas to the reaction space, wherein the non-reaction gas is used for blowing particles in the reaction space.

The invention provides an atomic layer deposition device of particles, comprising: a vacuum chamber including a reaction space for accommodating a plurality of particles, wherein the reaction space is a circular wavy column; a shaft seal device; the driving unit is connected with the vacuum cavity through the shaft seal device and drives the vacuum cavity to rotate through the shaft seal device; at least one gas extraction line, which is in fluid connection with the reaction space of the vacuum cavity and is used for extracting a gas in the reaction space; and at least one gas inlet pipeline which is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor or a non-reaction gas to the reaction space, wherein the non-reaction gas is used for blowing particles in the reaction space.

The vacuum cavity comprises a cover plate and a cavity, wherein the inner surface of the cover plate is provided with a polygonal groove, the cavity is provided with a polygonal space, and the polygonal groove of the cover plate and the polygonal space of the cavity form a polygonal column.

The atomic layer deposition device of the particles, wherein the gas inlet pipeline comprises at least one non-reactive gas delivery pipeline which is fluidly connected with the reaction space of the vacuum cavity and is used for delivering the non-reactive gas into the reaction space of the vacuum cavity so as to blow the particles in the reaction space.

The atomic layer deposition device of particles, wherein the shaft sealing device comprises an outer tube and an inner tube, the outer tube has a receiving space for receiving the inner tube, and the inner tube has a connecting space for receiving the pumping line, the pumping line and the non-reactive gas delivery line.

The atomic layer deposition device of the particles is characterized in that a part of the inner tube body extends from the accommodating space of the outer tube body to the reaction space of the vacuum cavity body to form a protruding tube part.

The vacuum cavity comprises a cover plate and a cavity, the inner surface of the cover plate is provided with a circular wavy groove, the cavity is provided with a circular wavy space, and the circular wavy groove of the cover plate and the circular wavy space of the cavity form a circular wavy column.

The invention has the beneficial effects that: the gas inlet pipeline is used for conveying precursor gas and non-reaction gas to the reaction space, and particles in the reaction space can be effectively stirred by the non-reaction gas by matching with the special shape of the reaction space, so that a film with uniform thickness can be formed on the surfaces of the particles through an atomic layer deposition process.

Drawings

FIG. 1 is a schematic perspective view of an atomic layer deposition apparatus for depositing particles according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of an atomic layer deposition apparatus of particles according to an embodiment of the present invention.

FIG. 3 is a schematic sectional view of a partial atomic layer deposition apparatus of particles according to an embodiment of the present invention.

FIG. 4 is a schematic perspective view of an embodiment of a vacuum chamber of an atomic layer deposition apparatus for depositing particles according to the present invention.

FIG. 5 is a schematic perspective view of another embodiment of a vacuum chamber of an atomic layer deposition apparatus for depositing particles according to the present invention.

FIG. 6 is a schematic sectional view of an apparatus for atomic layer deposition of particles according to another embodiment of the present invention.

Description of reference numerals: 10-atomic layer deposition of particles; 11-vacuum chamber; 111-a cover plate; 112-an inside surface; 113-a cavity; 114-an inner bottom surface; 115-grooves; 116-an inner surface; 117-grooves; 119-perforating; 12-a reaction space; 121-microparticles; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 14-a gear; 15-a drive unit; 171-a suction line; 173-an air intake line; 175-non-reactive gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier plate; 193-fixed mount; 195-a connecting shaft.

Detailed Description

Referring to fig. 1, fig. 2, fig. 3 and fig. 4, a schematic perspective view, a schematic cross-sectional view, a schematic partial cross-sectional view and a schematic perspective view of an embodiment of a vacuum chamber of an atomic layer deposition apparatus of the particles according to the present invention are respectively shown. As shown in the figure, the atomic layer deposition apparatus 10 of particles mainly includes a vacuum chamber 11, a shaft seal device 13 and a driving unit 15, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.

The vacuum chamber 11 has a reaction space 12 for accommodating a plurality of particles 121, wherein the powder 121 may be Quantum dots (Quantum dots), such as ZnS, CdS, CdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al2O 3). In the embodiment of the present invention, as shown in fig. 4, the vacuum chamber 11 includes a cover plate 111 and a chamber 113, wherein the reaction space 12 inside the vacuum chamber 11 is a circular wavy column.

At least one pumping line 171, at least one gas inlet line 173 and/or at least one non-reactive gas delivery line 175 are fluidly connected to the reaction space 12 of the vacuum chamber 11, for example, the pumping line 171, the gas inlet line 173, the non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the shaft sealing device 13, as shown in FIG. 3. The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the subsequent atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.

The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for delivering a precursor or a non-reactive gas to the reaction space 12. For example, the gas inlet line 173 may be connected to a precursor storage tank and a non-reactive gas storage tank through a valve set, and deliver the precursor gas into the reaction space 12 through the valve set, so that the precursor gas is deposited on the surface of the particles 121. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and precursor gas into the reaction space 12. Non-reactive gases are then delivered into reaction space 12 through a set of valves and pumped through pumping line 171 to remove unreacted precursor gases from reaction space 12. In one embodiment of the present invention, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursor gases into the reaction space 12 through each branch line.

In addition, the flow rate of the non-reactive gas supplied to the reaction space 12 through the gas supply line 173 may be increased, and the particles 121 in the reaction space 12 may be blown by the non-reactive gas, so that the particles 121 are diffused to various regions of the reaction space 12 by the non-reactive gas.

In one embodiment of the present invention, the gas inlet line 173 may include at least one non-reactive gas delivery line 175 fluidly connected to the reaction space 12 of the vacuum chamber 11 and configured to deliver non-reactive gas to the reaction space 12, for example, the non-reactive gas delivery line 175 may be connected to a nitrogen storage tank through a valve set and deliver nitrogen to the reaction space 12 through the valve set. The non-reactive gas is used to blow the particles 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the particles 121 in the reaction space 12 and deposit a thin film with uniform thickness on the surface of each particle 121.

The gas inlet line 173 and the non-reactive gas delivery line 175 of the atomic layer deposition apparatus 10 are used for delivering non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of non-reactive gas for removing the precursor gas in the reaction space 12, and the non-reactive gas delivery line 175 delivers a larger flow of non-reactive gas for blowing the particles 121 in the reaction space 12. In addition, the non-reactive gas delivered by the gas inlet line 173 and the non-reactive gas delivery line 175 may be different gases.

The gas inlet line 173 and the non-reactive gas transfer line 175 transfer the non-reactive gas to the reaction space 12 at different time points, so that the non-reactive gas transfer line 175 may not be provided in practical applications, and the flow rate of the non-reactive gas transferred by the gas inlet line 173 at different time points may be adjusted. Specifically, when the precursor gas in the reaction space 12 is removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the particles 121 in the reaction space 12 are blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.

In an embodiment of the present invention, the shaft sealing device 13 includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has a receiving space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed.

The shaft seal device 13 of the present invention can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used for isolating the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.

In an embodiment of the present invention, a filter unit 139 may be disposed at one end of the inner pipe 133 connected to the reaction space 12, wherein the gas exhaust line 171 is fluidly connected to the reaction space 12 via the filter unit 139, and exhausts the gas in the reaction space 12 via the filter unit 139. The filtering unit 139 is mainly used to filter the particles 121 in the reaction space 12 to prevent the particles 121 from entering the air exhaust line 171 during the air exhaust process and causing the loss of the particles 121.

The driving unit 15 is connected to the vacuum chamber 11 through the outer tube 131, and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate, the inner tube 133 does not rotate, which is beneficial to maintaining the stability of the air pumping or supplying of the air pumping line 171, the air inlet line 173 and/or the non-reactive gas conveying line 175 in the inner tube 133.

The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle, and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The particles 121 in the reaction space 12 are agitated by the rotation of the vacuum chamber 11, so that the particles 121 contact with the precursor gas.

In an embodiment of the invention, the driving unit 15 can be a motor, and is connected to the outer tube 131 through at least one gear 14, and drives the outer tube 131 and the vacuum chamber 11 to rotate relative to the inner tube 133 through the gear 14. The pumping line 171, the intake line 173, the non-reactive gas delivery line 175, the heater 177, and/or the temperature sensing unit 179 may be disposed in the connection space 134 of the inner tube 133, as shown in fig. 2 and 3.

The heater 177 heats the connecting space 134 and the inner tube 133, and heats the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175 in the inner tube 133 through the heater 177 to increase the temperature of the gas in the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175. For example, the temperature of the non-reactive gas and/or precursor gas delivered to the reaction space 12 by the gas inlet line 173 may be increased, and the temperature of the non-reactive gas delivered to the reaction space 12 by the non-reactive gas delivery line 175 may be increased. So that the temperature of the reaction space 12 is not greatly reduced or changed when the non-reactive gas and/or the precursor gas enters the reaction space 12. In addition, the temperature of the heater 177 or the connection space 134 can be measured by the temperature sensing unit 179 to know the operating state of the heater 177. Of course, another heating device is usually disposed inside, outside or around the vacuum chamber 11, wherein the heating device is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.

The reaction space 12 of the present invention is a circular wavy column, and the non-reactive gas supplied to the reaction space 12 through the gas supply line 173 or the non-reactive gas supply line 175 is transferred to each region through the reaction space 12 of the circular wavy column, and raises the particles 121 in the reaction space 12, so that the particles 121 are uniformly diffused to each region of the reaction space 12. The particles 121 in the reaction space 12 can be uniformly heated and a thin film having a uniform thickness can be formed on the surfaces of the particles 121.

Specifically, a plurality of semi-cylindrical structures or arc-shaped cylindrical structures may be formed on the inner surface 112 of the vacuum chamber 11, as shown in fig. 4, wherein the semi-cylindrical structures or arc-shaped cylindrical structures are continuously disposed along the inner surface 112, so that the cross section of the reaction space 12 is in a circular wave shape.

The inner bottom surface 114 and the inner top surface of the vacuum chamber 11 may be provided with corresponding grooves 115/117, for example, the inner surface 116 of the cover plate 111 of the vacuum chamber 11 may be provided with circular wavy grooves 117, and the inner bottom surface 114 of the chamber 113 is provided with corresponding circular wavy grooves 115, wherein the circular wavy grooves 115/117 correspond to the circular wavy space on the inner side surface 112 of the vacuum chamber 11, so that the circular wavy grooves 117 of the cover plate 111 and the circular wavy space of the chamber 113 form a circular wavy cylinder. The edges of the groove 115/117 may be curved to facilitate the introduction of the non-reactive gas into the reaction space 12 and the particles 121 entrained by the non-reactive gas.

The particles 121 in the semi-cylindrical or arc-cylindrical structure of the inner surface 112 will rotate with the vacuum chamber 11, and will not fall down gradually due to gravity until the particles 121 in the semi-cylindrical or arc-cylindrical structure rotate to a specific angle. This further uniformly and sufficiently agitates the particles 121 in the reaction space 12, so that each particle 121 is uniformly heated and a thin film with uniform thickness is formed on the surface of the particle 121.

In another embodiment of the present invention, as shown in FIG. 5, the reaction space 12 in the vacuum chamber 11 may be a polygonal column, such as a hexagonal column. Specifically, the inner surface 116 of the cover plate 111 of the vacuum chamber 11 may be provided with a polygonal groove 117 corresponding to the polygonal space on the inner side surface 112 of the vacuum chamber 11, wherein the polygonal groove 117 of the cover plate 111 and the polygonal space of the chamber 113 form a polygonal column. In various embodiments, no grooves may be provided on the inner surface 116 of the cover plate 111.

A through hole 119 is formed on the inner bottom surface 114 of the cavity 113, as shown in fig. 4 and 5, and a portion of the shaft seal device 13 is disposed in the through hole 119, for example, one end of the inner tube 133 of the shaft seal device 13 can be attached to the through hole 119, as shown in fig. 2. In various embodiments, a portion of the shaft seal apparatus 13 can be inserted through the through hole 119 and positioned in the reaction space 12, for example, a portion of the inner tube 133 of the shaft seal apparatus 13 can be inserted through the through hole 119 and extended into the reaction space 12 to form a protruding tube portion 130 in the reaction space, as shown in FIG. 6.

In an embodiment of the present invention, the atomic layer deposition apparatus 10 may also include a carrier 191 and at least one fixing frame 193, wherein the carrier 191 may be a plate for carrying the driving unit 15, the vacuum chamber 11 and the shaft sealing device 13. For example, the carrier plate 191 is connected to the driving unit 15, and the sealing device 13 and the vacuum chamber 11 are connected by the driving unit 15. In addition, the shaft seal device 13 and/or the vacuum chamber 11 can also be connected to the bearing plate 191 through at least one support frame to improve the stability of the connection.

The bearing plate 191 may be connected to the fixing frame 193 through at least one connecting shaft 195, wherein the number of the fixing frames 193 may be two, and the two fixing frames are respectively disposed at two sides of the bearing plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 by using the shaft 195 as an axis to change the elevation angles of the driving unit 15, the shaft sealing device 13 and the vacuum chamber 11, so as to form a film with uniform thickness on the surface of each particle 121.

The invention has the advantages that:

the gas inlet pipeline is used for conveying precursor gas and non-reaction gas to the reaction space, and particles in the reaction space can be effectively stirred by the non-reaction gas by matching with the special shape of the reaction space, so that a film with uniform thickness can be formed on the surfaces of the particles through an atomic layer deposition process.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.

Claims

1. An apparatus for atomic layer deposition of particles, comprising:

a vacuum chamber including a reaction space for accommodating a plurality of particles, wherein the reaction space is a polygonal column;

the vacuum cavity comprises a cover plate and a cavity, wherein a polygonal groove is formed in the inner surface of the cover plate, the cavity is provided with a polygonal space, and the polygonal groove of the cover plate and the polygonal space of the cavity form a polygonal columnar body;

a shaft sealing device, which comprises an outer tube and an inner tube, wherein the outer tube has a containing space for containing the inner tube;

the driving unit is connected with the vacuum cavity through the outer pipe body of the shaft seal device and drives the vacuum cavity to rotate through the shaft seal device, and when the driving unit drives the outer pipe body and the vacuum cavity to rotate, the inner pipe body cannot rotate along with the outer pipe body and the vacuum cavity;

at least one gas extraction line positioned in the inner tube body, fluidly connected to the reaction space of the vacuum chamber, and used for extracting a gas in the reaction space; and

at least one gas inlet line in the inner tube, fluidly connected to the reaction space of the vacuum chamber, for delivering a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used to blow the particles in the reaction space.

2. The apparatus of claim 1, wherein the gas inlet line comprises at least one non-reactive gas delivery line fluidly connected to the reaction space of the vacuum chamber and configured to deliver the non-reactive gas into the reaction space of the vacuum chamber to blow the particles in the reaction space.

3. The apparatus of claim 2, wherein the inner tube has a connecting space for receiving the pumping line, the gas inlet line and the non-reactive gas delivery line.

4. The atomic layer deposition device according to claim 3, wherein a portion of the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber and forms a protruding tube.

5. An apparatus for atomic layer deposition of particles, comprising:

a vacuum chamber including a reaction space for accommodating a plurality of particles, wherein the reaction space is a circular wavy column;

the vacuum cavity comprises a cover plate and a cavity, wherein a circular wavy groove is formed in the inner surface of the cover plate, a circular wavy space is formed in the cavity, and the circular wavy groove of the cover plate and the circular wavy space of the cavity form a circular wavy column;

6. The apparatus according to claim 5, wherein the gas inlet line comprises at least one non-reactive gas delivery line fluidly connected to the reaction space of the vacuum chamber and configured to deliver the non-reactive gas into the reaction space of the vacuum chamber to blow the particles in the reaction space.

7. The apparatus of claim 6, wherein the inner tube has a connecting space for receiving the pumping line, the gas inlet line and the non-reactive gas delivery line.

8. The atomic layer deposition device according to claim 7, wherein a portion of the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber and forms a protruding tube.