CN112397559B - 可拉伸显示模组及其制备方法 - Google Patents
可拉伸显示模组及其制备方法 Download PDFInfo
- Publication number
- CN112397559B CN112397559B CN202011237892.9A CN202011237892A CN112397559B CN 112397559 B CN112397559 B CN 112397559B CN 202011237892 A CN202011237892 A CN 202011237892A CN 112397559 B CN112397559 B CN 112397559B
- Authority
- CN
- China
- Prior art keywords
- islands
- display
- layer
- flexible substrate
- stretchable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 142
- 239000012790 adhesive layer Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims description 101
- 238000004806 packaging method and process Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- 239000003292 glue Substances 0.000 claims description 26
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 9
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 6
- -1 polydimethylsiloxane Polymers 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract description 5
- 230000002829 reductive effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/18—Tiled displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32137—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0715—Polysiloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供了一种可拉伸显示模组及其制备方法,所述可拉伸显示模组包括:显示层,包括多个显示岛,所述多个显示岛呈阵列排布,且彼此间隔设置,相邻的两个所述显示岛通过连接走线实现电性连接;透明胶层,包括填充于所述多个显示岛之间的间隔区域的填充胶层,与配置于所述显示层背离所述显示层出光方向表面上的第一胶层,以及配置于所述显示层出光方向表面上的第二胶层,所述透明胶层使得多个所述显示岛粘结为一个整体。通过将显示层分隔成独立的岛状,以降低显示层的杨氏模量,获得更大的拉伸率,同时设置透明胶层将分隔开来的显示岛粘结成一个整体,从而提高了由独立的显示岛构成的显示层的强度,起到抑制拉伸时面板显示的扭曲变形的效果。
Description
技术领域
本发明涉及显示技术领域,具体涉及一种可拉伸显示模组及其制备方法。
背景技术
近年来,柔性显示技术已成为显示领域的研究热点之一,特别是,具有相对物理变形自由度更高的有机发光二极管(OLED)开辟了关于显示形态的新的可能性。可机械变形的显示设备不仅具有更好的美学效果,而且还可以为信息显示的原始形态带来巨大的改进。例如,目前已实现量产的可折叠显示器便完全改变了具有有限屏幕面积的移动显示器的概念,而对屏幕尺寸没有任何限制。类似地,可拉伸显示器可将这种屏幕尺寸限制的概念更进一步地打破。从理论上讲,可拉伸显示器能够使柔性显示器实现复杂的曲率变形,并且可以与任何类型的表面贴合。这些特性对于新的电子设备(如可穿戴设备、车载显示设备)的开发是必不可少的,近来引起了极大的关注。
如何实现可拉伸显示器较大的拉伸率,同时仍保留较高的强度以防止断裂以及抑制拉伸时面板显示的扭曲变形,仍为目前研究开发的难点之一。
发明内容
本发明提供一种可拉伸显示模组以及制备方法,该可拉伸显示模组兼具较高的拉伸率与强度。
为解决上述问题,第一方面,本发明提供一种可拉伸显示模组,所述可拉伸显示模组包括:
显示层,包括多个显示岛,所述多个显示岛呈阵列排布,且彼此间隔设置,相邻的两个所述显示岛通过连接走线实现电性连接;
透明胶层,包括填充于所述多个显示岛之间的间隔区域的填充胶层,配置于所述显示层背离所述显示层出光方向表面上的第一胶层,以及配置于所述显示层出光方向表面上的第二胶层,所述透明胶层使得多个所述显示岛粘结为一个整体。
进一步地,所述可拉伸显示模组还包括:
第一可拉伸层,贴附于所述第一胶层上;以及
第二可拉伸层,贴附于所述第二胶层上。
进一步地,每一所述显示岛均各自独立地包括柔性衬底岛,配置于所述柔性衬底岛上的阵列驱动岛,配置于所述阵列驱动岛上的显示器件岛,以及配置于所述显示器件岛上的封装岛。
进一步地,所述连接走线为曲线型走线。
进一步地,所述可拉伸显示模组划分为:
拉伸区,所述拉伸区包括显示区与配置于所述显示区外侧的栅极驱动电路区,其中,多个所述显示岛配置于所述显示区,所述栅极驱动电路区包括彼此间隔设置多个栅极驱动电路岛,相邻的两个所述栅极驱动电路岛,以及相邻的栅极驱动电路岛与显示岛通过所述连接走线实现电性连接;以及
非拉伸区,与所述拉伸区的一侧边相连,所述非拉伸区包括边框走线与绑定区。
进一步地,所述第一可拉伸层与所述第二可拉伸层的材料包括聚二甲基硅氧烷。
进一步地,所述透明胶层的材料为包含聚二甲基硅氧烷的粘性胶材。
另一方面,本发明还提供了一种可拉伸显示模组的制备方法,所述制备方法包括如下步骤:
S101:提供一刚性基板,在所述刚性基板上形成柔性衬底;
S102:在所述柔性衬底形成多个阵列驱动岛以及电性连接于相邻的所述阵列驱动岛之间的连接走线,所述多个阵列驱动岛呈阵列排布,且彼此间隔设置;
S103:在多个所述阵列驱动岛上对应地形成多个显示器件岛;
S104:在多个所述显示器件岛上对应地形成多个封装岛;
S105:在所述多个封装岛上形成保护层;
S106:剥离去除所述刚性基板;
S107:对所述柔性衬底进行图案化制程,去除多个所述阵列驱动岛间隔区域对应的柔性衬底,以形成与多个所述阵列驱动岛对应的多个柔性衬底岛,进而得到呈阵列排布且彼此间隔的多个显示岛,每个所述显示岛包括依次层叠设置的所述柔性衬底岛,所述阵列驱动岛,所述显示器件岛以及所述封装岛;
S108:提供第一可拉伸层,在所述第一可拉伸层上形成第一胶层,并将所述第一胶层粘附于多个所述柔性衬底岛背离所述阵列驱动岛的表面;
S109:剥离去除所述保护层;
S110:在多个所述显示岛的间隔区域形成填充胶层,并在多个所述封装岛背离所述显示器件岛的表面形成第二胶层;以及
S111:提供第二可拉伸层,并贴附于所述第二胶层上。
进一步地,在所述步骤S107中,通过曝光蚀刻工艺或激光切割工艺完成所述图案化制程。
另一方面,本发明还提供了一种可拉伸显示模组的制备方法,所述制备方法包括如下步骤:
S201:提供一刚性基板,在所述刚性基板上形成柔性衬底;
S202:在所述柔性衬底形成多个阵列驱动岛以及电性连接于相邻的所述阵列驱动岛之间的连接走线,所述多个阵列驱动岛呈阵列排布,且彼此间隔设置;
S203:在多个所述阵列驱动岛上对应地形成多个显示器件岛;
S204:在多个所述显示器件岛上对应地形成多个封装岛;
S205:在所述阵列驱动岛,显示器件岛与封装岛形成的多个堆叠结构的间隔区域形成第一填充胶层,并在多个所述封装岛背离所述显示器件岛的表面形成第二胶层,提供第一可拉伸层,并贴附于所述第二胶层上;
S206:在所述第一可拉伸层上形成保护层;
S207:剥离去除所述刚性基板;
S208:对所述柔性衬底进行图案化制程,去除多个所述阵列驱动岛间隔区域对应的柔性衬底,以形成与多个所述阵列驱动岛对应的多个柔性衬底岛,进而得到呈阵列排布且彼此间隔的多个显示岛,每个所述显示岛包括依次层叠设置的所述柔性衬底岛,所述阵列驱动岛,所述显示器件岛以及所述封装岛;
S209:在多个所述柔性衬底岛的间隔区域形成第二填充胶层,并在多个所述柔性衬底岛背离所述阵列驱动岛的表面形成第一胶层;
S210:提供第二可拉伸层,并贴附于所述第一胶层上;以及
S211:剥离去除所述保护层。
有益效果:本发明提供了一种可拉伸显示模组及其制备方法,所述可拉伸显示模组包括显示层,而所述显示层由彼此间隔设置的显示岛,以及连接相邻显示岛的连接走线形成,如此一来,通过将显示层分隔成独立的岛状,从而降低了整体显示层的杨氏模量以获得更大的拉伸率,同时设置透明胶层将分隔开来的显示岛相互粘结形成一个整体,从而提高了由独立的显示岛构成的显示层的强度,起到抑制拉伸时面板显示的扭曲变形的效果。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种可拉伸显示模组的截面结构示意图;
图2是本发明实施例提供的一种可拉伸显示模组的平面结构示意图;
图3a-3h是本发明实施例提供的一种可拉伸显示模组的制备方法的结构流程示意图;
图4是本发明实施例提供的一种可拉伸显示模组的制备方法的文字流程示意图;
图5a-5h是本发明实施例提供的另一种可拉伸显示模组的制备方法的结构流程示意图;
图6是本发明实施例提供的另一种可拉伸显示模组的制备方法的文字流程示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本申请中,“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本发明,给出了以下描述。在以下描述中,为了解释的目的而列出了细节。应当明白的是,本领域普通技术人员可以认识到,在不使用这些特定细节的情况下也可以实现本发明。在其它实例中,不会对公知的结构和过程进行详细阐述,以避免不必要的细节使本发明的描述变得晦涩。因此,本发明并非旨在限于所示的实施例,而是与符合本申请所公开的原理和特征的最广范围相一致。
本发明实施例提供一种可拉伸显示模组,以下结合图1提供的截面结构示意图以及图2提供的平面结构示意图,进行详细说明:
所述可拉伸显示模组包括:
显示层,包括多个显示岛A111(图中仅示例性地示出了3个),所述多个显示岛A111呈阵列排布,且彼此间隔设置,相邻的两个所述显示岛A111通过连接走线L1实现电性连接,所述连接走线L1通常包括数据线与信号线,作为间隔设置的显示岛A111之间的信号传输路径;
透明胶层120,包括填充于所述多个显示岛A111之间的间隔区域的填充胶层121,与配置于所述显示层背离所述显示层出光方向(将显示层出光方向定义为图2中向上的方向)表面上的第一胶层122,以及配置于所述显示层出光方向表面上的第二胶层123,所述填充胶层121,所述第一胶层122以及所述第二胶层123之间相互粘结形成整体的透明胶层,并使得多个所述显示岛粘结为一个整体。
通过上述设计,将所述显示层设置为彼此间隔排布的显示岛,再通过设置连接走线实现连接相邻显示岛的电性导通,如此一来,通过将显示层分隔成独立的岛状,从而降低了整体显示层的杨氏模量以获得更大的拉伸率,同时设置透明胶层将分隔开来的显示岛相互粘结形成一个整体,从而提高了由独立的显示岛构成的显示层的强度,起到抑制拉伸时面板显示的扭曲变形的效果。
在一些实施例中,所述可拉伸显示模组还包括:第一可拉伸层130,贴附于所述第一胶层122上;以及第二可拉伸层140,贴附于所述第二胶层123上。通过设置上下两层可拉伸层作为支撑层,可进一步提升显示层的强度,起到抑制拉伸时面板显示的扭曲变形的效果。
在一些实施例中,每一所述的显示岛A111均各自独立地包括柔性衬底岛111,配置于所述柔性衬底岛111上的阵列驱动岛112,补充说明的是,所述连接走线与所述阵列驱动岛112同层设置,配置于所述阵列驱动岛112上的显示器件岛113,以及配置于所述显示器件岛113上的封装岛114。即,显示层中的各个结构层均分隔为独立的岛,第一方面,常规整面形成的柔性衬底经图案化成多个独立间隔的柔性衬底岛111,即可避免因柔性衬底材质本身较大的杨氏模量造成拉伸率较低的问题,另一方面,常规整面形成的封装层同样经图案形化成多个独立间隔的封装岛114,每一封装岛对每一显示岛A111中的显示器件岛113进行独立地封装,从而避免了因拉伸造成封装层出现裂纹而导致封装失效的风险,提升该可拉伸显示模组的可靠性。
补充说明的是,在本发明提供的实施例中,所述柔性衬底岛即为柔性显示面板中通常设置的柔性衬底,可为聚酰亚胺薄膜,或中层夹设氮化硅/氧化硅薄膜的双层聚酰亚胺薄膜,出于本发明的特殊结构设计,将显示区的柔性衬底图案化为若干个间隔设置的岛状,故将其定义为柔性衬底岛;
其他结构命名同理,具体地,所述阵列驱动岛包括用于驱动上层显示器件岛的驱动电路,具体包括多个阵列排布的薄膜晶体管;
所述显示器件岛包括与所述阵列驱动岛中的多个阵列排布的薄膜晶体管一一对应配置并相互电连接的多个显示器件,所述显示器件可为OLED显示器件,Micro LED显示器件或其他可由薄膜晶体管驱动的显示器件;
所述封装岛则为对所述显示器件岛进行封装的结构层,作为阻隔层抑制外界环境中的水氧进入并侵袭所述显示器件岛中的显示器件,从而避免显示器件失效的发生,所述封装岛的封装形式通常为薄膜封装,包括层叠设置的无机膜层/有机膜层/无机膜层;
上述的柔性衬底岛,阵列驱动岛,显示器件岛以及封装岛对应地层叠设置,即形成所述显示岛。
在一些实施例中,所述连接走线与所述阵列驱动岛同层设置,即,所述连接走线通过将相邻的阵列驱动岛进行电性连接,而实现所述相邻的显示岛之间的电信连接,得以传输电信号。
在一些实施例中,所述连接走线L1为曲线型走线,示例性地,所述连接走线L1可为波浪型走线,更具体地,可由沿至少两个不同方向弯曲延伸的走线部连接形成,即形成如图2中所示的S型走线,以降低拉伸时连接走线断裂的风险。当然所述连接走线L1可为其他任意的线型,仅需保证所述连接走线L1的实际长度大于所连接的相邻显示岛A111之间的间隔宽度,本发明对此不作具体限定。
在一些实施例中,所述可拉伸显示模组划分为:
拉伸区A1,所述拉伸区A1包括显示区A11与配置于所述显示区外侧的栅极驱动电路区A12,其中,多个所述显示岛A111配置于所述显示区A11,所述栅极驱动电路区A12包括彼此间隔设置多个栅极驱动电路岛A121,所述栅极驱动电路岛A121通常包括第二柔性衬底岛(与显示岛A111的柔性衬底岛同层设置)与设于所述第二柔性衬底岛上的栅极驱动电路,相邻的两个所述栅极驱动电路岛A121,以及相邻的栅极驱动电路岛A121与显示岛A111同样通过所述连接走线L1实现电性连接;以及
非拉伸区A2,与所述拉伸区A1的一侧边相连,所述非拉伸区A2包括边框走线与绑定区(图中未具体示出,通常包括与COF覆晶薄膜/FPC柔性电路板进行绑定的绑定端子),同样地,所述边框走线与相邻的所述显示岛A111与栅极驱动电路岛A121通过所述连接走线L1实现电性连接,其中,所述非拉伸区A2包含与所述柔性衬底岛111同层设置的柔性衬底,但所述非拉伸区A2的柔性衬底未经图案化,为完整的膜层,抑制了非拉伸区A2的拉伸。
另外,很容易理解的是,所述填充胶层120当然也填充于相邻的两个所述显示岛栅极驱动电路岛A121,相邻的栅极驱动电路岛A121与显示岛A111,以及非拉伸区A2与栅极驱动电路岛A121与显示岛A111之间的间隔,即,所述第一可拉伸层130与第二可拉伸层140之间的所有间隙均被所述填充胶层120填充,以粘结形成完成的整体。
在一些实施例中,所述第一可拉伸层与所述第二可拉伸层的材料选用可拉伸的透明材料,示例性地,所述第一可拉伸层与所述第二可拉伸层的材料包括具有较低杨氏模量的聚二甲基硅氧烷。
在一些实施例中,所述透明胶层的材料选自可拉伸的透明粘性胶材,示例性地,所述透明胶层的材料为包含聚二甲基硅氧烷的粘性胶材,当然所述透明胶层的材料也可采用本领域常用的用于粘结膜层结构的光学透明胶或光学透明树脂。
在一些实施例中,所述第一可拉伸层,所述第二可拉伸层与所述透明胶层的杨氏模量通常需较为接近,以避免所述第一可拉伸层,所述第二可拉伸层与所述透明胶层因拉伸率相差过大,导致拉伸时界面剥离的不良,具体地,80%×(所述透明胶层的杨氏模量)≤第一可拉伸层的杨氏模量≤120%×(所述透明胶层的杨氏模量),80%×(所述透明胶层的杨氏模量)≤第二可拉伸层的杨氏模量≤120%×(所述透明胶层的杨氏模量),更进一步地,90%×(所述透明胶层的杨氏模量)≤第一可拉伸层的杨氏模量≤110%×(所述透明胶层的杨氏模量),90%×(所述透明胶层的杨氏模量)≤第二可拉伸层的杨氏模量≤110%×(所述透明胶层的杨氏模量)。
补充说明的是,每一所述的显示岛均包括若干个阵列排布的子像素,每一所述显示岛大小及相邻显示岛的间距根据实际的工艺需求而定,本发明对此不作限定。
另一方面,本发明实施例还提供了一种上述可拉伸显示模组的制备方法,结合3a-3h提供的该制备方法的结构流程示意图(需要说明的是,为了更清楚的进行制备步骤的描述,仅示出了显示区的截面结构,对制备方法的理解不会造成影响),以及图4是提供的该制备方法的文字流程示意图,进行如下详细说明:
具体地,所述制备方法包括:
S101:提供一刚性基板200,在所述刚性基板200上形成柔性衬底210,所述刚性基板200通常为玻璃基板,所述柔性衬底210通常为聚酰亚胺膜;
S102:在所述柔性衬底210形成阵列驱动层220,所述阵列驱动层220包括多个阵列驱动岛221以及电性连接于相邻的所述阵列驱动岛221之间的连接走线(图中未示出),所述多个阵列驱动岛221呈阵列排布,且彼此间隔设置,当然所述阵列驱动层220在显示区之外还包括栅极驱动电路岛,边框走线与绑定端子等,详见上述的实施例;
S103:在多个所述阵列驱动岛221上对应地形成多个显示器件岛230,所述显示器件岛230为OLED型显示器件岛或Micro LED型显示器件岛;
S104:在多个所述显示器件岛230上对应地形成多个封装岛240,即形成如图3a所示的结构;
S105:在所述多个封装岛240上形成保护层250,即形成如图3b所示的结构,所述保护层250用于保护下层的所述封装岛240在后续制程免受划伤等损伤,并且所述保护层250在后续剥离后也不会对下层的封装岛240造成损伤;
S106:剥离去除所述刚性基板200,使得柔性衬底210显露,即形成如图3c所示的结构,所述刚性基板200通常通过激光剥离工艺完成剥离;
S107:对所述柔性衬底210进行图案化制程,去除多个所述阵列驱动岛221间隔区域对应的柔性衬底,以形成与多个所述阵列驱动岛221对应的多个柔性衬底岛211,即形成如图3d所示的结构,依次层叠设置的多个所述柔性衬底岛211,多个所述阵列驱动岛221,多个所述显示器件岛230以及多个所述封装岛240形成多个显示岛;
S108:提供第一可拉伸层270,在所述第一可拉伸层270上形成第一胶层261,并将所述第一胶层261粘附于多个所述柔性衬底岛211背离所述阵列驱动岛221的表面,即形成如图3e所示的结构,所述第一胶层261可通过涂布预聚胶体溶液后经固化形成,也可直接使用对应大小的固态胶层,贴附后使用一定压力压合形成;
S109:剥离去除所述保护层250,即形成如图3f所示的结构;
S110:在多个所述显示岛的间隔区域形成填充胶层262,并在多个所述封装岛240背离所述显示器件岛230的表面形成第二胶层263,即形成所述图3g所示的结构,所述填充胶层262与所述第二胶层263可通过一道制程同时形成,所形成的填充胶层262与所述第二胶层263以及第一胶层261相互粘结形成整体的透明胶层,并使得多个所述显示岛粘结为一个整体;以及
S111:提供第二可拉伸层280,并贴附于所述第二胶层263上,即制备完成,形成如图3h所示的可拉伸显示模组。
在一些实施例中,在所述步骤S107中,通过曝光蚀刻工艺或激光切割工艺完成所述图案化制程或其他可进行图案化的工艺,本发明对此不作限定。
另一方面,本发明实施例还提供了一种上述可拉伸显示模组的制备方法,与上述实施例提供的制备方法大体相同,不同之处仅在于部分步骤的顺序进行了调换,对所形成的可拉伸显示模组的最终结构不造成影响,以下结合图5a-5h提供的该制备方法的结构流程示意图(需要说明的是,为了更清楚的进行制备步骤的描述,仅示出了显示区的截面结构,对制备方法的理解不会造成影响),以及图6是提供的该制备方法的文字流程示意图,进行详细说明:
该制备方法包括如下步骤:
S201:提供一刚性基板300,在所述刚性基板300上形成柔性衬底310;
S202:在所述柔性衬底310形成阵列驱动层320,所述阵列驱动层320包括多个阵列驱动岛321以及电性连接于相邻的所述阵列驱动岛321之间的连接走线(图中未示出),所述多个阵列驱动岛321呈阵列排布,且彼此间隔设置,当然所述阵列驱动层320在显示区之外还包括栅极驱动电路岛,边框走线与绑定端子等,详见上述的实施例;
S203:在多个所述阵列驱动岛321上对应地形成多个显示器件岛330;
S204:在多个所述显示器件岛330上对应地形成多个封装岛340,即形成如图5a所示的结构;
S205:在所述阵列驱动岛321,显示器件岛330与封装岛340形成的多个堆叠结构的间隔区域形成第一填充胶层351,并在多个所述封装岛340背离所述显示器件岛330的表面形成第二胶层352,提供第一可拉伸层360,并贴附于所述第二胶层352上,即形成如图5b所示的结构;
S206:在所述第一可拉伸层360上形成保护层370,即形成如图5c所示的结构;
S207:剥离去除所述刚性基板300,即形成如图5d所示的结构;
S208:对所述柔性衬底310进行图案化制程,去除多个所述阵列驱动岛321间隔区域对应的柔性衬底,以形成与多个所述阵列驱动岛321对应的多个柔性衬底岛311,即形成如图5e所示的结构,依次层叠设置的多个所述柔性衬底岛311,多个所述阵列驱动岛321,多个所述显示器件岛330以及多个所述封装岛340形成多个显示岛;
S209:在多个所述柔性衬底岛311的间隔区域形成第二填充胶层353,并在多个所述柔性衬底岛311背离所述阵列驱动岛321的表面形成第一胶层354,即形成如图5f所示的结构;
S210:提供第二可拉伸层380,并贴附于所述第一胶层354上,即形成如图5g所示的结构;以及
S211:剥离去除所述保护层370,即完成制备形成如图5h所示的可拉伸显示模组。
需要说明的是,上述可拉伸显示模组的实施例中仅描述了上述结构,可以理解的是,除了上述结构之外,还可以根据需要包括任何其他的必要结构,具体此处不作限定。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见上文针对其他实施例的详细描述,此处不再赘述。
以上对本发明实施例所提供的一种可拉伸显示模组及其制备方法进行了详细介绍,本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本发明的限制。
Claims (10)
1.一种可拉伸显示模组,其特征在于,所述可拉伸显示模组包括:
显示层,包括多个显示岛,所述多个显示岛呈阵列排布,且彼此间隔设置,相邻的两个所述显示岛通过连接走线实现电性连接;透明胶层,包括填充于所述多个显示岛之间的间隔区域的填充胶层,配置于所述显示层背离所述显示层出光方向表面上的第一胶层,以及配置于所述显示层出光方向表面上的第二胶层,所述透明胶层使得多个所述显示岛粘结为一个整体;
其中,所述可拉伸显示模组包括拉伸区和连接于所述拉伸区一侧的非拉伸区;多个所述显示岛配置于所述拉伸区,每一所述显示岛包括柔性衬底岛与依次配置于所述柔性衬底岛上的阵列驱动岛和显示器件岛,多个所述柔性衬底岛独立间隔设置;所述非拉伸区包含与所述柔性衬底岛同层设置的柔性衬底,所述柔性衬底为未经图案化的完整膜层。
2.如权利要求1所述的可拉伸显示模组,其特征在于,所述可拉伸显示模组还包括:
第一可拉伸层,贴附于所述第一胶层上;以及
第二可拉伸层,贴附于所述第二胶层上。
3.如权利要求1所述的可拉伸显示模组,其特征在于,每一所述显示岛均各自独立地包括配置于所述显示器件岛上的封装岛。
4.如权利要求1所述的可拉伸显示模组,其特征在于,所述连接走线为曲线型走线。
5.如权利要求1所述的可拉伸显示模组,其特征在于,所述拉伸区包括显示区与配置于所述显示区外侧的栅极驱动电路区,其中,多个所述显示岛配置于所述显示区,所述栅极驱动电路区包括彼此间隔设置多个栅极驱动电路岛,相邻的两个所述栅极驱动电路岛,以及相邻的栅极驱动电路岛与显示岛通过所述连接走线实现电性连接;
所述非拉伸区包括边框走线与绑定区。
6.如权利要求2所述的可拉伸显示模组,其特征在于,所述第一可拉伸层与所述第二可拉伸层的材料包括聚二甲基硅氧烷。
7.如权利要求1所述的可拉伸显示模组,其特征在于,所述透明胶层的材料为包含聚二甲基硅氧烷的粘性胶材。
8.一种可拉伸显示模组的制备方法,其特征在于,所述制备方法包括如下步骤:
S101:提供一刚性基板,在所述刚性基板上形成柔性衬底;
S102:在所述柔性衬底形成多个阵列驱动岛以及电性连接于相邻的所述阵列驱动岛之间的连接走线,所述多个阵列驱动岛呈阵列排布,且彼此间隔设置;
S103:在多个所述阵列驱动岛上对应地形成多个显示器件岛;
S104:在多个所述显示器件岛上对应地形成多个封装岛;
S105:在所述多个封装岛上形成保护层;
S106:剥离去除所述刚性基板;
S107:对所述柔性衬底进行图案化制程,去除多个所述阵列驱动岛间隔区域对应的柔性衬底,以形成与多个所述阵列驱动岛对应的多个柔性衬底岛,进而得到呈阵列排布且彼此间隔的多个显示岛,每个所述显示岛包括依次层叠设置的所述柔性衬底岛,所述阵列驱动岛,所述显示器件岛以及所述封装岛;
S108:提供第一可拉伸层,在所述第一可拉伸层上形成第一胶层,并将所述第一胶层粘附于多个所述柔性衬底岛背离所述阵列驱动岛的表面;
S109:剥离去除所述保护层;
S110:在多个所述显示岛的间隔区域形成填充胶层,并在多个所述封装岛背离所述显示器件岛的表面形成第二胶层;以及
S111:提供第二可拉伸层,并贴附于所述第二胶层上;
其中,所述可拉伸显示模组包括拉伸区和连接于所述拉伸区一侧的非拉伸区;多个所述显示岛配置于所述拉伸区,多个所述柔性衬底岛独立间隔设置;所述非拉伸区包含与所述柔性衬底岛同层设置的柔性衬底,所述柔性衬底为未经图案化的完整膜层。
9.如权利要求8所述的可拉伸显示模组的制备方法,其特征在于,在所述步骤S107中,通过曝光蚀刻工艺或激光切割工艺完成所述图案化制程。
10.一种可拉伸显示模组的制备方法,其特征在于,所述制备方法包括如下步骤:
S201:提供一刚性基板,在所述刚性基板上形成柔性衬底;
S202:在所述柔性衬底形成多个阵列驱动岛以及电性连接于相邻的所述阵列驱动岛之间的连接走线,所述多个阵列驱动岛呈阵列排布,且彼此间隔设置;
S203:在多个所述阵列驱动岛上对应地形成多个显示器件岛;
S204:在多个所述显示器件岛上对应地形成多个封装岛;
S205:在所述阵列驱动岛,显示器件岛与封装岛形成的多个堆叠结构的间隔区域形成第一填充胶层,并在多个所述封装岛背离所述显示器件岛的表面形成第二胶层,提供第一可拉伸层,并贴附于所述第二胶层上;
S206:在所述第一可拉伸层上形成保护层;
S207:剥离去除所述刚性基板;
S208:对所述柔性衬底进行图案化制程,去除多个所述阵列驱动岛间隔区域对应的柔性衬底,以形成与多个所述阵列驱动岛对应的多个柔性衬底岛,进而得到呈阵列排布且彼此间隔的多个显示岛,每个所述显示岛包括依次层叠设置的所述柔性衬底岛,所述阵列驱动岛,所述显示器件岛以及所述封装岛;
S209:在多个所述柔性衬底岛的间隔区域形成第二填充胶层,并在多个所述柔性衬底岛背离所述阵列驱动岛的表面形成第一胶层;
S210:提供第二可拉伸层,并贴附于所述第一胶层上;以及
S211:剥离去除所述保护层;
其中,所述可拉伸显示模组包括拉伸区和连接于所述拉伸区一侧的非拉伸区;多个所述显示岛配置于所述拉伸区,多个所述柔性衬底岛独立间隔设置;所述非拉伸区包含与所述柔性衬底岛同层设置的柔性衬底,所述柔性衬底为未经图案化的完整膜层。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011237892.9A CN112397559B (zh) | 2020-11-09 | 2020-11-09 | 可拉伸显示模组及其制备方法 |
PCT/CN2020/130510 WO2022095140A1 (zh) | 2020-11-09 | 2020-11-20 | 可拉伸显示模组及其制备方法 |
US17/280,868 US11916052B2 (en) | 2020-11-09 | 2020-11-20 | Stretchable display module and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011237892.9A CN112397559B (zh) | 2020-11-09 | 2020-11-09 | 可拉伸显示模组及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112397559A CN112397559A (zh) | 2021-02-23 |
CN112397559B true CN112397559B (zh) | 2024-02-02 |
Family
ID=74598122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011237892.9A Active CN112397559B (zh) | 2020-11-09 | 2020-11-09 | 可拉伸显示模组及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11916052B2 (zh) |
CN (1) | CN112397559B (zh) |
WO (1) | WO2022095140A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112863339B (zh) * | 2021-01-12 | 2022-08-23 | 武汉华星光电半导体显示技术有限公司 | 可拉伸显示面板及显示装置 |
CN113593418B (zh) * | 2021-08-11 | 2022-11-08 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法、移动终端 |
CN113689788A (zh) * | 2021-08-12 | 2021-11-23 | 武汉华星光电半导体显示技术有限公司 | 曲面显示模组 |
CN113780179B (zh) * | 2021-09-13 | 2023-08-29 | 武汉华星光电半导体显示技术有限公司 | 柔性显示模组及显示终端 |
CN114220831B (zh) * | 2021-12-10 | 2023-12-01 | 武汉华星光电半导体显示技术有限公司 | 可拉伸显示面板及其制造方法 |
CN114937414B (zh) * | 2022-05-23 | 2023-08-22 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板及其制作方法、显示终端 |
CN115240547B (zh) * | 2022-06-15 | 2023-06-23 | 昆山国显光电有限公司 | 显示装置及其制备方法 |
TWI812463B (zh) * | 2022-09-13 | 2023-08-11 | 友達光電股份有限公司 | 可拉伸的畫素陣列基板 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005279789A (ja) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | 研削・研磨用真空チャック |
JP2010228032A (ja) * | 2009-03-26 | 2010-10-14 | Mitsubishi Materials Corp | 表面被覆立方晶窒化ほう素基超高圧焼結材料製切削工具 |
JP2015192416A (ja) * | 2014-03-28 | 2015-11-02 | パイオニア株式会社 | スピーカ装置用振動板、及び、スピーカ装置用振動板の製造方法 |
KR20190005795A (ko) * | 2017-07-07 | 2019-01-16 | (주)넥스디스플레이 | 평면형 디스플레이 장치와 곡면형 에지를 갖는 커버글래스를 갖는 사용자 기기 |
CN110189637A (zh) * | 2019-06-27 | 2019-08-30 | 京东方科技集团股份有限公司 | 显示装置、可拉伸显示面板及其制造方法 |
CN110459571A (zh) * | 2019-08-19 | 2019-11-15 | 京东方科技集团股份有限公司 | 一种阵列基板、电致发光显示装置和阵列基板的制作方法 |
CN111146245A (zh) * | 2018-11-06 | 2020-05-12 | 乐金显示有限公司 | 可拉伸显示装置 |
CN111402734A (zh) * | 2020-03-26 | 2020-07-10 | 武汉华星光电半导体显示技术有限公司 | 柔性显示模组及其制备方法与柔性显示装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011187901A (ja) * | 2010-03-11 | 2011-09-22 | Canon Inc | 半導体デバイスの製造方法 |
JP2011233714A (ja) * | 2010-04-27 | 2011-11-17 | Canon Inc | 半導体素子 |
KR101852190B1 (ko) * | 2011-06-28 | 2018-04-25 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조방법 |
KR102348353B1 (ko) * | 2015-04-30 | 2022-01-07 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 이의 제조 방법 |
KR102478223B1 (ko) * | 2016-02-02 | 2022-12-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR101810050B1 (ko) * | 2016-08-11 | 2017-12-19 | 삼성디스플레이 주식회사 | 스트레처블 디스플레이 장치 및 스트레처블 디스플레이 장치의 제조 방법 |
CN206249816U (zh) | 2016-09-18 | 2017-06-13 | 惠州市惠泽电器有限公司 | 一种可拉伸变大的显示屏 |
KR102393377B1 (ko) * | 2017-08-07 | 2022-05-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102485295B1 (ko) * | 2017-11-30 | 2023-01-04 | 엘지디스플레이 주식회사 | 표시장치 |
KR102014179B1 (ko) * | 2017-12-08 | 2019-08-26 | 엘지디스플레이 주식회사 | 유기발광 표시장치와 그의 제조방법 |
KR102615589B1 (ko) * | 2017-12-28 | 2023-12-18 | 엘지디스플레이 주식회사 | 지문 인식이 가능한 표시 장치 |
KR102591811B1 (ko) * | 2018-05-18 | 2023-10-23 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
WO2019230261A1 (ja) * | 2018-05-31 | 2019-12-05 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
US10549393B2 (en) * | 2018-06-05 | 2020-02-04 | Universidad Nacional de Itapua | Rotary base for securing tools to a work table |
KR102530672B1 (ko) * | 2018-07-20 | 2023-05-08 | 엘지디스플레이 주식회사 | 스트레쳐블 표시 장치 |
KR102554461B1 (ko) * | 2018-07-26 | 2023-07-10 | 엘지디스플레이 주식회사 | 스트레쳐블 표시 장치 |
KR102609426B1 (ko) * | 2018-10-08 | 2023-12-01 | 엘지디스플레이 주식회사 | 스트레쳐블 표시 장치 |
CN209133509U (zh) | 2019-01-08 | 2019-07-19 | 昆山工研院新型平板显示技术中心有限公司 | 可拉伸显示面板及显示装置 |
CN111509136B (zh) * | 2019-01-31 | 2021-12-28 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板 |
JP2020148925A (ja) | 2019-03-14 | 2020-09-17 | 株式会社ポラテクノ | 表示装置及び偏光板 |
WO2021022490A1 (zh) | 2019-08-06 | 2021-02-11 | 京东方科技集团股份有限公司 | 柔性显示面板及其制作方法、柔性显示装置 |
CN110473475B (zh) | 2019-08-30 | 2022-01-25 | 京东方科技集团股份有限公司 | 光学胶层、拉伸显示装置及光学胶层的制备方法 |
CN112599532A (zh) * | 2019-10-01 | 2021-04-02 | 财团法人工业技术研究院 | 电子装置 |
-
2020
- 2020-11-09 CN CN202011237892.9A patent/CN112397559B/zh active Active
- 2020-11-20 WO PCT/CN2020/130510 patent/WO2022095140A1/zh active Application Filing
- 2020-11-20 US US17/280,868 patent/US11916052B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005279789A (ja) * | 2004-03-26 | 2005-10-13 | Ibiden Co Ltd | 研削・研磨用真空チャック |
JP2010228032A (ja) * | 2009-03-26 | 2010-10-14 | Mitsubishi Materials Corp | 表面被覆立方晶窒化ほう素基超高圧焼結材料製切削工具 |
JP2015192416A (ja) * | 2014-03-28 | 2015-11-02 | パイオニア株式会社 | スピーカ装置用振動板、及び、スピーカ装置用振動板の製造方法 |
KR20190005795A (ko) * | 2017-07-07 | 2019-01-16 | (주)넥스디스플레이 | 평면형 디스플레이 장치와 곡면형 에지를 갖는 커버글래스를 갖는 사용자 기기 |
CN111146245A (zh) * | 2018-11-06 | 2020-05-12 | 乐金显示有限公司 | 可拉伸显示装置 |
CN110189637A (zh) * | 2019-06-27 | 2019-08-30 | 京东方科技集团股份有限公司 | 显示装置、可拉伸显示面板及其制造方法 |
CN110459571A (zh) * | 2019-08-19 | 2019-11-15 | 京东方科技集团股份有限公司 | 一种阵列基板、电致发光显示装置和阵列基板的制作方法 |
CN111402734A (zh) * | 2020-03-26 | 2020-07-10 | 武汉华星光电半导体显示技术有限公司 | 柔性显示模组及其制备方法与柔性显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US11916052B2 (en) | 2024-02-27 |
CN112397559A (zh) | 2021-02-23 |
WO2022095140A1 (zh) | 2022-05-12 |
US20220359477A1 (en) | 2022-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112397559B (zh) | 可拉伸显示模组及其制备方法 | |
CN109192761B (zh) | 一种显示面板及其制备方法 | |
CN110570764A (zh) | 一种显示面板及其制作方法 | |
CN112599570B (zh) | 显示面板及其制备方法 | |
CN113363264B (zh) | 一种阵列基板及其制备方法和显示装置 | |
WO2023024152A1 (zh) | 可拉伸显示面板 | |
CN111554783B (zh) | 一种led阵列基板的制备方法、led阵列基板、面板及设备 | |
WO2023155634A1 (zh) | 显示面板和电子设备 | |
EP4386724A1 (en) | Curved surface display module | |
KR20200099223A (ko) | 표시 장치 및 이의 제조 방법 | |
CN114242909B (zh) | 一种显示屏及其制作方法、显示终端 | |
KR20180076858A (ko) | 유기 발광 표시 장치 | |
CN114725164A (zh) | 柔性显示设备及其制造方法 | |
CN110690251B (zh) | 发光元件封装结构及其制造方法 | |
US12021090B2 (en) | Curved display module | |
CN113451347B (zh) | 显示面板、显示装置及显示面板制作方法 | |
CN114823770A (zh) | 显示模组及其制作方法、显示装置 | |
US20240170471A1 (en) | Buried Seam with Kirigami Pattern for 3D Micro LED Display | |
WO2023164836A1 (zh) | 可拉伸显示面板及其制造方法、显示装置 | |
CN219303664U (zh) | 一种硅基微显示面板结构 | |
EP4195305A1 (en) | Display screen and manufacturing method therefor, and display terminal | |
KR20180079481A (ko) | 유기 발광 표시 장치 | |
CN116682826A (zh) | 显示面板、显示装置、键合装置和显示面板的制备方法 | |
CN116234351A (zh) | 显示面板及其制备方法、显示模组和显示装置 | |
CN113811997A (zh) | 一种显示背板及其制备方法、显示母板和显示面板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |