CN112088227A - 具有整合遮件库的预清洁腔室 - Google Patents

具有整合遮件库的预清洁腔室 Download PDF

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CN112088227A
CN112088227A CN201980029806.4A CN201980029806A CN112088227A CN 112088227 A CN112088227 A CN 112088227A CN 201980029806 A CN201980029806 A CN 201980029806A CN 112088227 A CN112088227 A CN 112088227A
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shutter
processing chamber
assembly
shade
substrate processing
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CN112088227B (zh
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C-H·M·蔡
A·朱普迪
S·巴布
M·科帕
H·高滨
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Applied Materials Inc
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Abstract

本公开提供具有整合遮件库的基板处理腔室。在一些实施例中，预清洁基板处理腔室可包括腔室主体、基板支撑件、遮盘库及遮盘组件机构，其中腔室主体包括第一侧和第二侧，第一侧被配置成附接于主框架基板处理工具，第二侧与第一侧相对设置，基板支撑件被配置成当基板安置在基板支撑件上时支撑基板，遮盘库设置在处理腔室的第二侧上，遮盘组件机构包括可旋转的轴及耦接到该轴的机器人遮件臂，其中机器人遮件臂包括遮盘组件支撑部分，遮盘组件支撑部分被配置成支撑遮盘组件，且其中遮盘组件机构被配置成将该机器人遮件臂在储存位置与处理位置之间移动，该储存位置在该遮件库内，该处理位置在该处理腔室内且在该基板支撑件上方。

Description

具有整合遮件库的预清洁腔室
技术领域
本公开的实施例一般关于基板处理腔室的领域，且更具体地关于具有整合遮件库(shutter garage)的预清洁腔室。
背景技术
传统的半导体器件形成通常在一个或多个处理腔室中执行，处理腔室具有在受控处理环境中处理基板(如半导体晶片)的能力。为了维持工艺均匀性并确保处理腔室的最佳性能，周期性地执行各种调节操作。例如，在物理气相沉积(PVD)处理腔室中，一种常用的调节操作是“预烧(burn-in)”工艺，其中用等离子体离子撞击设置在PVD处理腔室中的靶以在执行基板处理之前，从靶去除氧化物或其他污染物。另一个常用的调节操作是“黏贴”工艺，其中在沉积于处理腔室表面上的材料上施加覆盖物，以防止材料从处理腔室表面剥落并在随后的工艺中污染基板。另一个操作是“预清洁”操作。在预清洁腔室中使用预清洁工艺来原位去除有机残留物和原生氧化物确保了清洁的表面，从而促进低接触电阻和优异的附着力。
在所有的上述调节/预清洁操作中，遮盘可经由传送机器人定位在处理腔室中设置的基板支撑件的顶部上，以防止任何材料沉积在基板支撑件上。遮盘通常包括具有足够的机械刚度的材料，足以抵抗由于沉积材料的额外重量引起的变形。例如，遮盘通常包括金属合金，诸如不锈钢或陶瓷(如碳化硅)。
然而，发明人已经观察到在调节和预清洁工艺中，遮盘会加热。由于盘上的热梯度和/或沉积，遮盘可能产生来自遮盘的顶表面和底表面之间的热失配的应力，例如，导致遮盘变形(例如，在端部弯曲)。这种翘曲/变形产生间隙，这导致等离子体通过该间隙暴露于基板支撑件。基板支撑件上的金属沉积可能导致基板晶片发生电弧、基板晶片黏附和/或断裂、如果基板支撑件是静电吸盘则静电吸附力可能减小等。
另外，遮盘通常被储存在处理区域之外且在使用期间被缓冲腔室机器人移动到所需的位置。为了使机器人能够搬运该盘，必须使遮盘的重量和厚度最小化。在黏贴和预烧工艺期间，这些较轻重量/较低厚度的遮盘变形较多。
已经尝试了各种解决方案来解决上述问题。例如，已经尝试使用较低的RF功率、较长的冷却周期以及向遮盘的背面添加冷却气体。然而，发明人已经观察到这些解决方案中没有一种足以保护基板支撑件免受不希望的材料沉积。
因此，本公开提供了改良的两件式遮盘组件。
发明内容
本公开提供具有整合遮件库的基板处理腔室。在一些实施例中，预清洁基板处理腔室可包括腔室主体、基板支撑件、遮盘库及遮盘组件机构，其中腔室主体包括第一侧和第二侧，第一侧被配置成附接于主框架基板处理工具，第二侧与第一侧相对设置，基板支撑件被配置成当基板安置在基板支撑件上时支撑基板，遮盘库设置在处理腔室的第二侧上，遮盘组件机构包括可旋转的轴及耦接到该轴的机器人遮件臂，其中机器人遮件臂包括遮盘组件支撑部分，遮盘组件支撑部分被配置成支撑遮盘组件，且其中遮盘组件机构被配置成将该机器人遮件臂在储存位置与处理位置之间移动，该储存位置在该遮件库内，该处理位置在该处理腔室内且在该基板支撑件上方。
以下更详细地公开了本公开的其他实施例和变化。
附图说明
本公开的实施例已简要概述于前，并在以下有更详尽的讨论，可以通过参考所附附图中绘示的本公开的示例性实施例以作了解。然而，值得注意的是，所附附图仅绘示了本公开的典型实施例，而由于本公开可允许其他等效的实施例，因此所附附图并不应被视为对本公开范围的限制。
图1是适合根据本公开的一些实施例使用的示例性处理腔室的示意图。
图2是根据本公开的一些实施例的用于基板处理的主框架工具的俯视图，其中多个基板处理腔室耦接到该主框架。
图3是根据本公开的一些实施例的遮件库和处理腔室的俯视横截面视图。
图4绘示根据本公开的一些实施例的机器人臂机构上的示例性遮盘组件的横截面透视图。
图5绘示根据本公开的一些实施例的遮盘组件的自置中(self-centering)特征的横截面。
为便于理解，在可能的情况下，使用相同的数字编号代表图示中相同的组件。为求清楚，附图未依比例绘制且可能被简化。可以预期的是，一个实施例中的要素与特征可有利地用于其他实施例中而无需赘述。
具体实施方式
本公开的实施例一般关于整合遮件库和用于移动遮盘组件的遮件臂组件(其用于基板处理腔室中，诸如，例如半导体制造处理腔室)，以及关于包含此类遮盘组件的基板处理腔室。在一些实施例中，本发明的设备包括在预清洁腔室上的整合遮件库和遮件臂组件。通过将其放置在处理腔室的背面上，本发明的设备可有利地减少与其他腔室的干扰。此外，本公开的实施例可以通过使用用于预清洁与其他基板处理操作的设置在处理腔室背面的整合遮件库以及相关的遮盘组件来改善套件寿命、控制缺陷、提高产量并防止交叉污染。
图1是结合本公开的一些实施例使用的示例性处理腔室100的示意图。在一些实施例中，处理腔室100可以是经组合以形成多腔室处理***(例如群集工具)的多个腔室中的一个。或者，处理腔室100可以是独立的处理腔室。在一些实施例中，处理腔室100可以是沉积腔室，例如物理气相沉积(PVD)腔室。或者，处理腔室100可以是任何合适的处理腔室，其中遮盘组件可用于在腔室清洁和或陈化工艺期间保护基板支撑件免受损坏。
处理腔室100包括腔室主体102和盖组件104，盖组件104限定可抽空的处理容积106。腔室主体102大体包括一个或多个侧壁108和底部110。一个或多个侧壁108可以是单一圆形侧壁或是在处理腔室中具有非圆形配置的多个侧壁。侧壁大体含有遮盘组件端口112。在一些实施例中，位于处理腔室100外部的遮件库113可储放遮盘组件140以及通过处理腔室100中的遮盘组件端口112将遮盘组件140移动到处理腔室100中。壳体116大致覆盖遮盘组件端口112，以保持处理容积106内的真空的完整性。可在侧壁中提供额外的端口，诸如可密封的进出端口，以提供基板114相对处理腔室100的进入和离开。泵送端口可设置在腔室主体102的侧壁和/或底部中，且耦接到泵送***，该泵送***抽空并控制处理容积106内的压力。
腔室主体102的盖组件104大致支撑环形屏蔽件118，环形屏蔽件118支撑遮蔽环120。遮蔽环120大致被配置成将沉积限制在经由遮蔽环120的中心暴露的基板114的部分。盖组件104大致包括靶122和磁控管124。
靶122提供在沉积工艺期间沉积在基板114上的材料，而磁控管124在处理期间增强靶材料的均匀消耗。靶122和基板支撑126通过电源128彼此相对偏压。惰性气体(例如氩)从气源130供应到处理容积106。在基板114和靶122之间从该气体形成等离子体。等离子体内的离子朝向靶122加速并使材料自靶122去除(dislodged)。被去除的靶材料被吸引朝向基板114并在其上沉积材料膜。
基板支撑件126大致设置在腔室主体102的底部110上，并在处理期间支撑基板114。遮盘组件机构132大致设置在基板支撑件126附近。遮盘组件机构132大致包括机器人遮件臂134与致动器136，机器人遮件臂134支撑遮盘组件140，致动器136通过轴138耦接至机器人遮件臂134以控制机器人遮件臂134的位置。机器人遮件臂134可在图1所示的缩回或清除位置与第二位置之间移动，第二位置将遮盘组件140直接放置在基板支撑件126上方以及与基板支撑件126实质同心。致动器136可以是适于使轴138旋转一定角度的任何装置，该角度使机器人遮件臂134在清除位置和第二位置之间移动。
在一些实施例中，遮盘组件140包括上盘构件142和下载体构件144。尽管在此描述为两件式组件，但是遮盘组件可包括额外的部件。另外，尽管在此描述为盘，但是遮盘组件及其部件可具有任何合适的几何形状，以用于保护特定处理腔室内的基板支撑件。在一些实施例中，上盘构件142本身可以是靶且用于黏贴工艺。下载体构件144围绕上盘构件142靶形成电绝缘阻隔件。这允许使用上盘构件142作为靶的黏贴工艺，同时防止对基板支撑件的电弧作用。下载体构件144和上盘构件142相对于彼此可移动地设置或耦接，使得下载体构件144和上盘构件142可相对于各自移动，例如，以允许独立的部件热膨胀和收缩。在一些实施例中，上盘构件142可仅静置在下载体构件144上。
在一些实施例中，如图5中所示的第一中央自置中特征500形成遮盘组件。在一些实施例中，对准插塞502设置在机器人遮件臂134中形成的空腔506中，且切合到载体构件144的底表面中形成的空腔中，以使整个遮盘组件140在机器人遮件臂134上自对准。对准插塞502可以是如图所示的锥形，或者可具有其他几何形状以利于对准。在一些实施例中，对准插塞502包括开口504，该开口504穿过该对准插塞502的中心而形成以用于减轻重量或减小当其移动时的惯性。在一些实施例中，对准插塞502可形成为机器人遮件臂134的部分，或者形成为如图5所示的单独件。在一些实施例中，对准插塞502由与机器人遮件臂134相同的材料制成，或者可由电绝缘材料制成或涂覆有电绝缘材料。如图5所示，中央自对准(self-alignment)组件500对准上盘构件142、载体构件144和机器人遮件臂134，其包括各个对准特征之间的间隙，以允许例如因热膨胀与收缩引起的上盘构件142相对于下载体构件144径向移动或变形，以及下载体构件144相对于机器人遮件臂134移动。
如图2所示，遮件库113设置在处理腔室101的背面上，这有利地减少了与其他腔室204的干扰。这允许处理腔室101附接于主框架202而不会干扰腔室204或装载/卸除模块206。在典型的PVD腔室中，由于遮盘组件140的重量(该重量需要重型和更大的机器人遮件臂)，遮件库设置在处理腔室101的侧面。通过使用较轻重量的机器人遮件臂134和遮盘组件140，遮件库113可定位在处理腔室的后部。
图3绘示遮件库、机器人遮件臂134和处理腔室100的俯视横截面视图。如图3所示，机器人遮件臂134包括遮盘组件支撑部分302，遮盘组件支撑部分302支撑遮盘组件140。遮盘组件支撑部分302包括一个或多个减重孔304。遮盘组件支撑部分302亦可包括空腔506和/或(作为上述中央自对准组件500的一部分的)对准插塞502，以利于上盘构件142、载体构件144和机器人遮件臂134的对准，如图4所示。在一些实施例中，机器人遮件臂134亦包括一个或多个臂孔310，其用于减轻重量和/或对准目的。机器人遮件臂134包括多个安装孔/螺栓306，以用于将机器人遮件臂134安装于轴138。机器人遮件臂134绕中心轴线轴308枢转。
在一些实施例中，机器人遮件臂134的形状使得其设计成减轻重量，以及因此减小运动期间的惯性。例如，如图3所示，机器人遮件臂134不仅包括减重孔304/310，且进一步包括用于支撑具有弯曲的遮盘组件140的最小表面积。在一些实施例中，遮盘组件支撑部分302的表面积是在遮盘组件140的底表面的表面积的约15％至约50％之间。在一些实施例中，遮盘组件支撑部分302的表面积是在遮盘组件140的底表面的表面积的约15％至约35％之间。
图3绘示在遮件库113内的储存位置中的机器人遮件臂134。机器人遮件臂134绕中心轴线轴308旋转，以使机器人遮件臂134及其携带的遮盘组件140移动到基板114上方，使得遮盘组件140覆盖基板114。
虽然前面所述是针对本公开的实施例，但可设计本公开的其他与进一步的实施例而不背离本公开的基本范围，且本公开的范围由以下权利要求所限定。

Claims (15)

1.一种预清洁基板处理腔室，包括：
腔室主体，其中所述腔室主体包括第一侧和第二侧，所述第一侧被配置成附接于主框架基板处理工具，所述第二侧与所述第一侧相对设置；
基板支撑件，当基板安置在所述基板支撑件上时，所述基板支撑件被配置成支撑所述基板；
遮盘库，所述遮盘库设置在所述处理腔室的所述第二侧上；及
遮盘组件机构，所述遮盘组件机构包括：
可旋转的轴；及
机器人遮件臂，所述机器人遮件臂耦接到所述轴，其中所述机器人遮件臂包括遮盘组件支撑部分，当遮盘组件安置在所述遮盘组件支撑部分上时，所述遮盘组件支撑部分被配置成支撑所述遮盘组件，以及其中所述遮盘组件机构被配置成将所述机器人遮件臂在储存位置与处理位置之间移动，所述储存位置在所述遮件库内，所述处理位置在所述处理腔室内且在所述基板支撑件上方。
2.如权利要求1所述的预清洁基板处理腔室，其中所述预清洁基板处理腔室是经组合以形成多腔室群集工具的多个腔室中的一个腔室。
3.如权利要求1所述的预清洁基板处理腔室，其中所述预清洁基板处理腔室被配置用于执行预清洁和/或陈化工艺。
4.如权利要求1所述的预清洁基板处理腔室，其中所述预清洁基板处理腔室包括一个或多个侧壁，且其中所述一个或多个侧壁中的一个包括遮盘组件端口。
5.如权利要求4所述的预清洁基板处理腔室，其中所述遮件库附接于所述处理腔室的所述第二侧的外表面。
6.如权利要求5所述的预清洁基板处理腔室，其中所述遮盘组件机构被配置用于经由所述遮盘组件端口在所述遮件库内的所述储存位置与所述处理腔室内的所述处理位置之间移动所述机器人遮件臂和所述遮盘组件。
7.如权利要求4所述的预清洁基板处理腔室，其中所述遮盘组件端口被壳体覆盖，所述壳体被配置用于保持所述预清洁基板处理腔室的处理容积内的真空。
8.如权利要求1所述的预清洁基板处理腔室，其中所述遮盘组件机构进一步包括致动器，所述致动器耦接到所述机器人遮件，所述致动器被配置用于控制所述机器人遮件臂的位置。
9.如权利要求1至8中任一项所述的预清洁基板处理腔室，其中所述机器人遮件臂包括遮盘组件支撑部分，当所述遮盘组件安置于所述遮盘组件支撑部分上时，所述遮盘组件支撑部分被配置成支撑所述遮盘组件。
10.如权利要求9所述的预清洁基板处理腔室，其中所述遮盘组件支撑部分包括一个或多个减重孔。
11.如权利要求9所述的预清洁基板处理腔室，其中所述遮盘组件支撑部分的顶表面的表面积是在所述遮盘组件的底表面的表面积的约15％至约35％之间。
12.如权利要求9所述的预清洁基板处理腔室，其中遮盘组件支撑部分包括空腔与对准插塞，所述空腔形成在所述机器人遮件臂中，所述对准插塞设置在所述空腔中且被配置用于对准所述遮盘组件和所述机器人遮件臂。
13.一种基板处理腔室，包括：
腔室主体，其中所述腔室主体；
基板支撑件，当基板安置在所述基板支撑件上时，所述基板支撑件被配置成支撑所述基板；
遮盘库，所述遮盘库附接于所述处理腔室的外表面；
遮盘组件；及
遮盘组件机构，所述遮盘组件机构包括：
可旋转的轴；
机器人遮件臂，所述机器人遮件臂耦接到所述轴，其中所述机器人遮件臂包括遮盘组件支撑部分，所述遮盘组件支撑部分被配置成支撑遮盘组件，以及其中所述遮盘组件机构被配置成将所述机器人遮件臂在储存位置与处理位置之间移动，所述储存位置在所述遮件库内，所述处理位置在所述处理腔室内且在所述基板支撑件上方；及
中央自对准组件，所述中央自对准组件包括第一空腔与对准特征，所述第一空腔形成在所述遮盘组件的底表面中，所述对准特征设置在所述机器人遮件臂的顶表面上，所述对准特征设置在所述遮盘组件的底表面中形成的所述第一空腔中。
14.如权利要求13所述的基板处理腔室，其中所述机器人遮件臂包括遮盘组件支撑部分，所述遮盘组件支撑部分支撑所述遮盘组件，且其中所述对准特征形成在所述遮盘组件支撑部分的所述顶表面中。
15.如权利要求14所述的基板处理腔室，其中所述对准特征由第二空腔和对准插塞所组成，所述第二空腔形成在所述机器人遮件臂中，所述对准插塞具有第一端与第二端，所述第一端设置在所述遮盘组件的所述第一空腔中，所述第二端设置在所述机器人遮件臂中形成的所述第二空腔中。
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US11251028B2 (en) 2022-02-15
TW202003892A (zh) 2020-01-16

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