CN112038359A - Bsi工艺深沟槽隔离制造方法 - Google Patents
Bsi工艺深沟槽隔离制造方法 Download PDFInfo
- Publication number
- CN112038359A CN112038359A CN202010780590.XA CN202010780590A CN112038359A CN 112038359 A CN112038359 A CN 112038359A CN 202010780590 A CN202010780590 A CN 202010780590A CN 112038359 A CN112038359 A CN 112038359A
- Authority
- CN
- China
- Prior art keywords
- trench isolation
- deep trench
- angstroms
- bsi
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000000227 grinding Methods 0.000 claims abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000007517 polishing process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
Abstract
本发明公开了一种BSI工艺深沟槽隔离制造方法，包括以下步骤：刻蚀形成深沟槽隔离后淀积第一预设厚度的金属，将深沟槽隔离填充满并在深沟槽隔离表面及两侧形成覆盖层；采用研磨去除第二预设厚度的部分覆盖层；采用晶圆面内刻蚀速率能调节刻蚀工艺，刻蚀去除剩余的覆盖层，仅保留深沟槽隔离中的金属填充。本发明可改善晶圆面内均匀性，解决晶圆边缘窗口不足的问题；采用两步移除深沟槽隔离表面金属还可以调节深沟槽隔离顶部金属尺寸，降低天线效应，降低RTS。
Description
技术领域
本发明涉及集成电路制造领域，特别是涉及一种用于BSI工艺的深沟槽隔离制造方法。
背景技术
BSI(backside illuminated CIS)：是将硅片减薄后，在photodiode背面搭建CF及Micro Lens，光线由背面射入，增大了光电元件感光面积，减少了光线经过布线时的损失，可以大幅提高CIS在弱光环境下的感光能力；BSI技术将CMOS成像的灵敏度提升到了一个新的水平。透镜排列在传感器后方的硅衬底上，而不是前方，前方的配线会限制光的吸收。相比旧的技术，这技术下的感光度和光吸收量提高了40％，而且还能形成更细的像素。
随机电报噪声(RTS)：是表征CIS性能的一个重要参数,它是一个随机过程，在互补金属氧化物半导体图像传感器(CIS，CMOS Image Sensor)中，随机电报噪声会在本该是黑色的地方产生错误的白点，严重影响成像质量。现有BSI工艺中深沟槽隔离表面金属去除存在以下缺陷；
1、造成很大的等离子损伤，增大暗电流及白点像素等缺陷，RTS性能也很差。
2、深沟槽隔离金属填充的关键尺寸较大，引起天线效应，使随机电报噪声增大。
天线效应：暴露的金属线或者多晶硅(polysilicon)等导体,就像是一根根天线,会收集电荷(如等离子刻蚀产生的带电粒子)导致电位升高天线越长,收集的电荷也就越多,电压就越高，会引起阈值电压波动，引起噪声。
发明内容
在发明内容部分中引入了一系列简化形式的概念,该简化形式的概念均为本领域现有技术简化，这将在具体实施方式部分中进一步详细说明。本发明的发明内容部分并不意味着要试图限定出所要求保护的技术方案的关键特征和必要技术特征，更不意味着试图确定所要求保护的技术方案的保护范围。
本发明要解决的技术问题是提供一种能降低随机电报噪声的BSI工艺深沟槽隔离制造方法。
为解决上述技术问题，本发明提供一种BSI工艺深沟槽隔离制造方法，包括以下步骤：
S1，刻蚀形成深沟槽隔离后淀积第一预设厚度的金属，将深沟槽隔离填充满并在深沟槽隔离表面及两侧形成覆盖层；
S2，采用研磨去除第二预设厚度的部分覆盖层；
S3，刻蚀去除剩余的覆盖层，仅保留深沟槽隔离中的金属填充；
其中，实施步骤S3时，晶圆面内刻蚀速率能调节。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，实施步骤S1时，采用PVD工艺淀积第一预设厚度金属。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，第一预设厚度范围是2000埃-4000埃。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，所述金属是钨。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，实施步骤S2时，采用化学机械研磨工艺去除第二预设厚度的部分覆盖层。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，第二预设厚度范围是500埃-2500埃。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，实施步骤S3时，采用等离子刻蚀工艺去除剩余的覆盖层。
可选择的，进一步改进所述的BSI工艺深沟槽隔离制造方法，其能应用于55nm的BSI工艺中。
本发明的原理如下：
经过研究发现BSI现有的深沟槽隔离表面金属钨去除工艺为化学机械研磨或者等离子刻蚀。采用等离子刻蚀去除深沟槽隔离表面金属钨，经过测试发现会造成很大的等离子损伤，增大暗电流及白点像素等缺陷，RTS性能也很差。采用化学机械研磨去除深沟槽隔离表面金属钨，虽然深沟槽隔离表面损伤小，深沟槽隔离金属钨的关键尺寸较大，经过测试发现会引起天线效应，使随机电报噪声增大。为了提高BSI芯片性能，降低RTS噪声水平，本发明将化学机械研磨和等离子刻蚀结合应用于深沟槽隔离制造，分两步移除深沟槽隔离表面的金属钨,即先采用化学机械研磨移除第一预设厚度的金属钨,然后采用等离子刻蚀去除深沟槽隔离表面剩余的金属钨,采用分两步移除金属钨，能显著降低对硅衬底的等离子损。并且，由于化学机械研磨速率一般是晶圆中间慢，晶圆边缘快，而等离子刻蚀可调节晶圆面内刻蚀速率。因此，采用两者结合的工艺可改善面内均匀性，解决晶圆边缘窗口不足的问题；同时，采用分两步移除金属钨还可以调节深沟槽隔离顶部金属钨关键尺寸，降低天线效应，降低RTS。
附图说明
本发明附图旨在示出根据本发明的特定示例性实施例中所使用的方法、结构和/或材料的一般特性，对说明书中的描述进行补充。然而，本发明附图是未按比例绘制的示意图，因而可能未能够准确反映任何所给出的实施例的精确结构或性能特点，本发明附图不应当被解释为限定或限制由根据本发明的示例性实施例所涵盖的数值或属性的范围。下面结合附图与具体实施方式对本发明作进一步详细的说明：
图1是本发明流程示意图。
具体实施方式
以下通过特定的具体实施例说明本发明的实施方式，本领域技术人员可由本说明书所公开的内容充分地了解本发明的其他优点与技术效果。本发明还可以通过不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点加以应用，在没有背离发明总的设计思路下进行各种修饰或改变。需说明的是，在不冲突的情况下，以下实施例及实施例中的特征可以相互组合。本发明下述示例性实施例可以多种不同的形式来实施，并且不应当被解释为只限于这里所阐述的具体实施例。应当理解的是，提供这些实施例是为了使得本发明的公开彻底且完整，并且将这些示例性具体实施例的技术方案充分传达给本领域技术人员。
第一实施例，如图1所示，本发明提供一种BSI工艺深沟槽隔离制造方法，其能应用于55nm的BSI工艺中，包括以下步骤：
S1，刻蚀形成深沟槽隔离后采用PVD工艺淀积第一预设厚度的金属，将深沟槽隔离填充满并在深沟槽隔离表面及两侧形成覆盖层；
S2，采用研磨去除第二预设厚度的部分覆盖层；
S3，刻蚀去除剩余的覆盖层，仅保留深沟槽隔离中的金属填充；
其中，实施步骤S3时，晶圆面内刻蚀速率能调节。
第二实施例，本发明提供一种BSI工艺深沟槽隔离制造方法，其能应用于55nm的BSI工艺中，包括以下步骤：
S1，刻蚀形成深沟槽隔离后采用PVD工艺淀积第一预设厚度的金属钨，将深沟槽隔离填充满并在深沟槽隔离表面及两侧形成覆盖层；
S2，采用化学机械研磨去除第二预设厚度的部分覆盖层；
S3，采用等离子刻蚀去除剩余的覆盖层，仅保留深沟槽隔离中的金属填充。
第三实施例，本发明提供一种BSI工艺深沟槽隔离制造方法，其能应用于55nm的BSI工艺中，包括以下步骤：
S1，刻蚀形成深沟槽隔离后采用PVD工艺淀积2000埃-4000埃厚度的金属钨，将深沟槽隔离填充满并在深沟槽隔离表面及两侧形成覆盖层；
S2，采用化学机械研磨去除500埃-2500埃厚度的部分覆盖层；
S3，采用等离子刻蚀去除剩余的覆盖层，仅保留深沟槽隔离中的金属填。
进一步改进上述第三实施例，步骤S1中，刻蚀形成深沟槽隔离后采用PVD工艺淀积金属钨的优选厚度为2000埃、2100埃、2200埃、2300埃、2400埃、2500埃、2600埃、2700埃、2800埃、2900埃、3000埃、3100埃、3200埃、3300埃、3400埃、3500埃、3600埃、3700埃、3800埃、3900埃或4000埃。
步骤S2中，采用化学机械研磨去除部分覆盖层优选厚度为500埃、600埃、700埃、800埃、900埃、1000埃、1100埃、1200埃、1300埃、1400埃、1500埃、1600埃、1700埃、1800埃、1900埃、2000埃、2100埃、2200埃、2300埃、2400埃或2500埃。
除非另有定义，否则这里所使用的全部术语(包括技术术语和科学术语)都具有与本发明所属领域的普通技术人员通常理解的意思相同的意思。还将理解的是，除非这里明确定义，否则诸如在通用字典中定义的术语这类术语应当被解释为具有与它们在相关领域语境中的意思相一致的意思，而不以理想的或过于正式的含义加以解释。
以上通过具体实施方式和实施例对本发明进行了详细的说明，但这些并非构成对本发明的限制。在不脱离本发明原理的情况下，本领域的技术人员还可做出许多变形和改进，这些也应视为本发明的保护范围。
Claims (8)
1.一种BSI工艺深沟槽隔离制造方法，其特征在于，包括以下步骤：
S1，刻蚀形成深沟槽隔离后淀积第一预设厚度的金属，将深沟槽隔离填充满并在深沟槽隔离表面及两侧形成覆盖层；
S2，采用研磨去除第二预设厚度的部分覆盖层；
S3，刻蚀去除剩余的覆盖层，仅保留深沟槽隔离中的金属填充；
其中，实施步骤S3时，晶圆面内刻蚀速率能调节。
2.如权利要求1所述的BSI工艺深沟槽隔离制造方法，其特征在于：
实施步骤S1时，采用PVD工艺淀积第一预设厚度金属。
3.如权利要求1所述BSI工艺深沟槽隔离制造方法，其特征在于：第一预设厚度范围是2000埃-4000埃。
4.如权利要求1所述的BSI工艺深沟槽隔离制造方法，其特征在于：所述金属是钨。
5.如权利要求1所述的BSI工艺深沟槽隔离制造方法，其特征在于：实施步骤S2时，采用化学机械研磨工艺去除第二预设厚度的部分覆盖层。
6.如权利要求1所述的BSI工艺深沟槽隔离制造方法，其特征在于：第二预设厚度范围是500埃-2500埃。
7.如权利要求1所述的BSI工艺深沟槽隔离制造方法，其特征在于：实施步骤S3时，采用等离子刻蚀工艺去除剩余的覆盖层。
8.如权利要求1-7任意一项所述的BSI工艺深沟槽隔离制造方法，其特征在于：其能应用于55nm的BSI工艺中。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010780590.XA CN112038359A (zh) | 2020-08-06 | 2020-08-06 | Bsi工艺深沟槽隔离制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010780590.XA CN112038359A (zh) | 2020-08-06 | 2020-08-06 | Bsi工艺深沟槽隔离制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112038359A true CN112038359A (zh) | 2020-12-04 |
Family
ID=73582421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010780590.XA Pending CN112038359A (zh) | 2020-08-06 | 2020-08-06 | Bsi工艺深沟槽隔离制造方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112038359A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909037A (zh) * | 2021-01-28 | 2021-06-04 | 上海华力集成电路制造有限公司 | 一种改善图像传感器随机电报噪声和图像非均一性的方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5486234A (en) * | 1993-07-16 | 1996-01-23 | The United States Of America As Represented By The United States Department Of Energy | Removal of field and embedded metal by spin spray etching |
| US20060043590A1 (en) * | 2004-08-27 | 2006-03-02 | International Business Machines Corporation | Maintaining uniform cmp hard mask thickness |
| JP2006245036A (ja) * | 2005-02-28 | 2006-09-14 | Seiko Epson Corp | 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置 |
| US20150311248A1 (en) * | 2014-04-25 | 2015-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters |
-
2020
- 2020-08-06 CN CN202010780590.XA patent/CN112038359A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5486234A (en) * | 1993-07-16 | 1996-01-23 | The United States Of America As Represented By The United States Department Of Energy | Removal of field and embedded metal by spin spray etching |
| US20060043590A1 (en) * | 2004-08-27 | 2006-03-02 | International Business Machines Corporation | Maintaining uniform cmp hard mask thickness |
| JP2006245036A (ja) * | 2005-02-28 | 2006-09-14 | Seiko Epson Corp | 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置 |
| US20150311248A1 (en) * | 2014-04-25 | 2015-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909037A (zh) * | 2021-01-28 | 2021-06-04 | 上海华力集成电路制造有限公司 | 一种改善图像传感器随机电报噪声和图像非均一性的方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11522004B2 (en) | Absorption enhancement structure for image sensor | |
| US10319768B2 (en) | Image sensor scheme for optical and electrical improvement | |
| US8187909B2 (en) | Backside illuminated image sensor having deep light reflective trenches | |
| US8390089B2 (en) | Image sensor with deep trench isolation structure | |
| CN109148492B (zh) | 光传感装置 | |
| US10475839B2 (en) | Semiconductor device with a radiation sensing region and method for forming the same | |
| US9484376B2 (en) | Semiconductor isolation structure and manufacturing method thereof | |
| JP2003264310A (ja) | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 | |
| TW201344917A (zh) | 半導體裝置及其製造方法 | |
| Yaung et al. | High performance 300mm backside illumination technology for continuous pixel shrinkage | |
| CN112038359A (zh) | Bsi工艺深沟槽隔离制造方法 | |
| CN105826331A (zh) | 采用背照式深沟槽隔离的背照式图像传感器的制作方法 | |
| CN105810696A (zh) | 采用背面深沟槽隔离的背照式图像传感器的制作方法 | |
| CN111834287B (zh) | 深沟槽隔离结构的制备方法及半导体结构 | |
| KR101693921B1 (ko) | 소자분리 영역을 갖는 컨택트 에치 저지층을 통해 금속 컨택트가 결합된 이미지 센서 | |
| US8940575B2 (en) | Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus | |
| US20090004769A1 (en) | Method for manufacturing image sensor | |
| CN105762160B (zh) | 背照式全局像素单元结构及其制备方法 | |
| US20060148123A1 (en) | Method for fabricating CMOS image sensor | |
| US20150206789A1 (en) | Method of modifying polysilicon layer through nitrogen incorporation for isolation structure | |
| JPH01295457A (ja) | 積層型固体撮像装置及びその製造方法 | |
| CN103383948A (zh) | 具有分段式蚀刻停止层的图像传感器 | |
| US20080124830A1 (en) | Method of manufacturing image sensor | |
| CN117276294A (zh) | 背照式图像传感器及其形成方法 | |
| CN115719752A (zh) | 图像传感器及其形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201204 |
|
| RJ01 | Rejection of invention patent application after publication |