CN111933752A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN111933752A CN111933752A CN202010813062.XA CN202010813062A CN111933752A CN 111933752 A CN111933752 A CN 111933752A CN 202010813062 A CN202010813062 A CN 202010813062A CN 111933752 A CN111933752 A CN 111933752A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application relates to the field of photovoltaics, and provides a solar cell and a preparation method thereof, wherein the method comprises the following steps: b diffusion is carried out on the textured N-type semiconductor substrate to form a boron diffusion layer; carrying out back etching on the semiconductor substrate, oxidizing to form a first oxide layer, and depositing a polycrystalline silicon layer on the surface of the first oxide layer; carrying out phosphorus diffusion on the polycrystalline silicon layer to form a phosphorus-doped polycrystalline silicon layer; forming a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer, and forming a back passivation layer on the surface of the second oxide layer; forming a front passivation layer on the surface of the boron diffusion layer; and forming an electrode on the front passivation layer and/or the back passivation layer. According to the solar cell and the preparation method thereof, the unsaturated defect between the doped polycrystalline silicon layer and the passivation layer is reduced, the passivation effect can be effectively improved, and the cell conversion efficiency is improved.
Description
Technical Field
The present disclosure relates to the field of photovoltaic cell technology, and in particular, to a solar cell and a method for manufacturing the same.
Background
The Topcon battery realizes the back passivation by means of a tunneling effect, and the back structure of the existing Topcon battery sequentially comprises a substrate, a tunneling oxidation layer, a doped polycrystalline silicon layer and a back passivation layer from inside to outside. Because the doped polysilicon layer and the back passivation layer are respectively deposited and formed in two different devices, some unsaturated defects are inevitably introduced between the doped polysilicon layer and the back passivation layer, carrier recombination and electrical property loss are easily caused, and the passivation effect is not ideal. Therefore, it is necessary to research methods for improving the back passivation effect to further improve the battery conversion efficiency.
Disclosure of Invention
In view of this, the present application provides a solar cell and a method for manufacturing the same, which can reduce the unsaturated defect between the doped polysilicon layer and the passivation layer (such as the silicon nitride layer), effectively improve the passivation effect, and improve the cell conversion efficiency.
The application provides a solar cell preparation method, which comprises the following steps:
b diffusion is carried out on the textured N-type semiconductor substrate to form a boron diffusion layer;
carrying out back etching on the semiconductor substrate and then oxidizing to form a first oxidation layer, and depositing a polycrystalline silicon layer on the surface of the first oxidation layer;
performing phosphorus diffusion on the polycrystalline silicon layer to form a phosphorus-doped polycrystalline silicon layer;
forming a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer, and forming a back passivation layer on the surface of the second oxide layer;
forming a front passivation layer on the surface of the boron diffusion layer; and
and forming an electrode on the front passivation layer and/or the back passivation layer.
In one possible embodiment, the thickness of the second oxide layer is 0.5nm to 5 nm; and/or the second oxide layer comprises at least one of silicon oxide, aluminum oxide and titanium oxide.
In a possible embodiment, after the phosphorus diffusion is performed on the polysilicon layer to form a phosphorus-doped polysilicon layer, and before a second oxide layer is formed on the surface of the phosphorus-doped polysilicon layer, the method further includes: and removing the phosphosilicate glass layer formed in the phosphorus diffusion process.
In a possible embodiment, after forming the second oxide layer on the surface of the phosphorus-doped polysilicon layer and before forming the back passivation layer on the surface of the second oxide layer, the method further includes: removing the polysilicon layer wound and plated on the front surface of the N-type semiconductor substrate; and removing the borosilicate glass layer formed in the boron diffusion process.
In a possible embodiment, after the phosphorus diffusion is performed on the polysilicon layer to form a phosphorus-doped polysilicon layer, and before a second oxide layer is formed on the surface of the phosphorus-doped polysilicon layer, the method further includes: removing the polysilicon layer wound and plated on the front surface of the N-type semiconductor substrate; and removing the phosphorosilicate glass layer formed in the phosphorus diffusion process and the borosilicate glass layer formed in the boron diffusion process.
In one possible embodiment, forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer includes: forming a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer by adopting a wet chemical oxidation method and/or a thermal oxidation method; or, depositing a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer by adopting any one of a physical vapor deposition method, a chemical vapor deposition method, a plasma enhanced chemical vapor deposition method and an atomic layer deposition method.
In one possible embodiment, forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer includes: and forming a second oxidation layer on the surface of the phosphorus-doped polycrystalline silicon layer by adopting a thermal oxidation method, wherein the thermal oxidation temperature is 500-600 ℃, and the thermal oxidation time is 150-300 s.
In one possible embodiment, forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer includes: and soaking the phosphorus-doped polycrystalline silicon layer on the back of the N-type semiconductor substrate in an oxidizing solution for wet chemical oxidation treatment, wherein the oxidizing solution comprises a hydrochloric acid solution and ozone, the mass concentration of the hydrochloric acid solution is 0.1-0.5%, the concentration of the ozone is 20-30 ppm, and the soaking time is 30-60 s.
In one possible embodiment, the removing the phosphosilicate glass layer formed during the phosphorus diffusion process includes:
pickling the phosphorosilicate glass layer on the back surface of the N-type semiconductor substrate for 30-60 s by using prepared mixed acid, wherein the mixed acid comprises a hydrofluoric acid solution with the mass concentration of 2-10% and a hydrochloric acid solution with the mass concentration of 2-10%; and washing and drying the back of the N-type semiconductor substrate after acid washing.
The embodiment of the application further provides a solar cell, which is obtained by the solar cell preparation method, and the solar cell comprises a first electrode, a first passivation layer, a boron diffusion layer, a semiconductor substrate, a first oxide layer, a phosphorus-doped polycrystalline silicon layer, a second oxide layer, a second passivation layer and a second electrode which are sequentially arranged from top to bottom.
The technical scheme of the application has at least the following beneficial effects:
through the formation of the multilayer structure of the first oxidation layer, the doped polycrystalline silicon layer, the second oxidation layer and the back passivation layer, the formation of the second oxidation layer can effectively passivate unsaturated defects between the doped polycrystalline silicon layer and the back passivation layer, and experimental results show that the minority carrier lifetime and the quasi-open circuit voltage (amplified-Voc) of the monitoring cell piece are improved by 1-2% before screen printing of the solar cell prepared by the preparation method, which indicates that the passivation effect is enhanced. The absolute value of the battery efficiency is improved by 0.1-0.2%, which shows that the multilayer passivation structure can effectively improve the battery conversion efficiency.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 2 is another flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure.
Detailed Description
For better understanding of the technical solutions of the present application, the following detailed descriptions of the embodiments of the present application are provided with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
The Topcon battery realizes the back passivation by means of a tunneling effect, and the back structure of the existing Topcon battery sequentially comprises a substrate, a tunneling oxidation layer, a doped polycrystalline silicon layer and a back passivation layer from inside to outside. Because the doped polysilicon layer and the back passivation layer are respectively deposited and formed in two different devices, some unsaturated defects are inevitably introduced between the doped polysilicon layer and the back passivation layer, carrier recombination and electrical property loss are easily caused, and the passivation effect is not ideal.
Therefore, in order to overcome the defects of the prior art, the technical scheme of the embodiment of the invention provides the solar cell and the preparation method thereof, the oxide layer is prepared between the doped polycrystalline silicon layer and the passivation layer on the back of the cell, the defect between the doped polycrystalline silicon layer and the passivation layer on the back is passivated, the passivation effect on the back of the cell is improved, and the conversion efficiency of the cell is improved.
In a first aspect, embodiments of the present application provide a method for manufacturing a solar cell, including the following steps:
b diffusion is carried out on the textured N-type semiconductor substrate to form a boron diffusion layer;
carrying out back etching on the semiconductor substrate and then oxidizing to form a first oxidation layer, and depositing a polycrystalline silicon layer on the surface of the first oxidation layer;
performing phosphorus diffusion on the polycrystalline silicon layer to form a phosphorus-doped polycrystalline silicon layer;
forming a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer, and forming a back passivation layer on the surface of the second oxide layer;
forming a front passivation layer on the surface of the boron diffusion layer; and
and forming an electrode on the front passivation layer and/or the back passivation layer.
In the scheme, the first oxide layer, the phosphorus-doped polycrystalline silicon layer, the second oxide layer and the back passivation layer are arranged on the back of the battery, so that the unsaturated defect between the doped polycrystalline silicon layer and the back passivation layer can be effectively overcome, the back passivation effect of the battery is improved, and the conversion efficiency of the battery is improved.
The following will clearly and completely describe the method for manufacturing an N-type Topcon cell with reference to the drawings in the embodiments of the present invention, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments 1 and 2 of the present invention without any creative efforts shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart of a method for manufacturing a solar cell according to this embodiment, and as shown in fig. 1, embodiment 1 of this application provides a method for manufacturing a solar cell, including the following steps:
step S10 is to perform boron diffusion on the N-type semiconductor substrate after texturing to form a boron diffusion layer.
Specifically, the front and back surfaces of the N-type semiconductor substrate may be subjected to texturing to form a textured or surface texture structure (e.g., a pyramid structure) prior to boron diffusion. The texturing process may be chemical etching, laser etching, mechanical method, plasma etching, etc., and is not limited herein. Illustratively, the front and back surfaces of the silicon wafer can be subjected to texturing treatment by using a NaOH solution, and the etching of the NaOH solution has anisotropy, so that a pyramid structured texture surface can be prepared.
In this embodiment, the surface of the silicon substrate has a texture structure through texturing, so that a light trapping effect is generated, the light absorption quantity of the solar cell is increased, and the conversion efficiency of the solar cell is improved.
In some embodiments, the front surface of the N-type semiconductor substrate is a surface facing the sun, and the back surface is a surface facing away from the sun. It should be further noted that the semiconductor substrate may be a crystalline silicon substrate (silicon substrate), such as a polycrystalline silicon substrate, a monocrystalline silicon substrate, or a monocrystalline-like silicon substrate, and the specific type of the semiconductor substrate is not limited in the embodiments of the present invention.
In step S10, a boron diffusion layer may be formed on the surface of the N-type semiconductor substrate by using any one or more of high temperature diffusion, slurry doping, or ion implantation.
In a specific embodiment, the N-type semiconductor substrate is N-type crystalline silicon, and the boron diffusion treatment is to form a boron diffusion layer by diffusing boron atoms through a boron source. The boron source may be, for example, a boron tribromide diffusion process, whereby the microcrystalline silicon phase of crystalline silicon is converted to a polycrystalline silicon phase. Due to the high concentration of boron on the surface of the semiconductor substrate, a borosilicate glass (BSG) layer is usually formed, which has a metal gettering effect and may affect the normal operation of the solar cell, and needs to be removed later.
Optionally, before the texturing process, a step of cleaning the semiconductor substrate can be further included to remove metal and organic contaminants on the surface.
And step S20, carrying out back etching and oxidation on the semiconductor substrate to form a first oxidation layer, and depositing a polysilicon layer on the surface of the first oxidation layer.
It should be noted that the embodiment of the present invention does not limit the specific operation manner of forming the first oxide layer. Specifically, the first oxide layer may be formed by performing oxidation after performing back etching on the semiconductor substrate by an ozone oxidation method, a high-temperature thermal oxidation method, or a nitric acid oxidation method. For example, the first oxide layer is formed by oxidizing the back surface of the semiconductor substrate by a thermal oxidation method. The first oxide layer may be a thin oxide layer or a tunnel oxide layer.
In a specific embodiment, a polysilicon layer may be deposited on the surface of the first oxide layer by any one of a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method, and an atmospheric pressure chemical vapor deposition method.
It can be understood that during the deposition of the polysilicon on the surface of the first oxide layer of the semiconductor substrate, the polysilicon is lap-plated to the front surface along the back surface of the semiconductor substrate, and therefore, the polysilicon lap-plated to the front surface of the semiconductor substrate needs to be de-lap-plated in a subsequent process.
And step S30, performing phosphorus diffusion on the polysilicon layer to form a phosphorus-doped polysilicon layer.
And phosphorus diffusion treatment, namely forming a doped polycrystalline silicon layer by diffusing quinquevalent phosphorus atoms at about 900 ℃, converting microcrystalline silicon phase of crystalline silicon into polycrystalline silicon phase after the diffusion treatment, and depositing phosphorus on the surface of the semiconductor substrate to form phosphosilicate glass (PSG).
The diffusion can adopt a two-step heat treatment method, namely, firstly decomposing the phosphorus source at about 1000 ℃, depositing the phosphorus source on the surface of the semiconductor substrate, and then carrying out heat treatment at 800-900 ℃ to ensure that phosphorus atoms on the surface are diffused into the polycrystalline silicon layer to form the phosphorus-doped polycrystalline silicon layer. Of course, a one-step deposition method may also be adopted, i.e. a polysilicon layer is formed on the surface of the first oxide layer by deposition and an in-situ doping treatment is simultaneously performed to form a phosphorus-doped polysilicon layer. The phosphorus diffusion process may also use any one or more of high temperature diffusion, slurry doping, or ion implantation, which is not limited herein.
In one embodiment, after step S30, the method further comprises:
step S31, removing a phosphosilicate glass layer (PSG) formed during the phosphorus diffusion process.
It is understood that, during phosphorus diffusion, due to the high concentration of phosphorus on the surface of the semiconductor substrate, a phosphosilicate glass (PSG) layer is usually formed, which has a metal gettering effect and may affect the normal operation of the solar cell and needs to be removed.
In a specific embodiment, the semiconductor substrate can be placed in a chain type acid cleaning device with the back surface facing downwards (the belt speed of the chain type device is 1.0 m/min-2.0 m/min), the semiconductor substrate enters an acid tank, a phosphosilicate glass layer (PSG) formed by phosphorus diffusion on the back surface is etched, a prepared mixed acid is arranged in the acid tank, the mixed acid comprises a hydrofluoric acid solution with the mass concentration of 2% -10% and a hydrochloric acid solution with the mass concentration of 2% -10%, the acid cleaning temperature is 15 ℃ -25 ℃, the acid cleaning time is about 30 s-60 s, the front surface of the semiconductor substrate is covered by a water film, the borosilicate glass layer (BSG) on the front surface of the semiconductor substrate can also be used as a protective layer, and the front surface of the semiconductor substrate is prevented from reacting with the mixed acid in the process of removing the phosphosilicate glass layer.
The method comprises the following steps of (1) washing with water after acid washing, wherein the washing time is 10-20 s, and the washing temperature can be 15-25 ℃; of course, the semiconductor substrate may be subjected to a baking process after the water washing.
Step S40, forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer, and forming a back passivation layer on the surface of the second oxide layer.
The thickness of the second oxide layer is 0.5nm to 5nm, and may be, for example, 0.5nm, 1.0nm, 1.5nm, 2.0nm, 2.5nm, 3.0nm, 3.5nm, 4nm, 4.5nm, or 5 nm. The second oxide layer not only has a passivation effect on the surface of the semiconductor substrate, but also needs to enable carriers to tunnel through, when the thickness of the second oxide layer is too small, the passivation effect cannot be achieved, and when the thickness of the second oxide layer is too large, the carriers cannot effectively penetrate through the second oxide layer.
Optionally, the material of the second oxide layer includes at least one of silicon oxide, aluminum oxide, titanium oxide, silicon carbide, and hydrogenated amorphous silicon. For example, the second oxide layer includes a silicon oxide layer or a titanium oxide layer.
Specifically, step S40 includes:
step S41, forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer;
step S42, removing the polysilicon layer wound and plated on the front surface of the N-type semiconductor substrate;
step S43, removing a borosilicate glass layer (BSG) formed in the boron diffusion process;
step S44, forming a back passivation layer on the surface of the second oxide layer.
Optionally, in step S41, a second oxide layer, such as silicon oxide, may be formed on the surface of the phosphorus-doped polysilicon layer by using a wet chemical oxidation method and/or a thermal oxidation method. Or, a second oxide layer, such as silicon carbide, titanium oxide, or the like, may be deposited on the surface of the phosphorus-doped polysilicon layer by any one of a physical vapor deposition method, a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, and an atomic layer deposition method.
Illustratively, a thermal oxidation method is adopted to form a second oxide layer on the surface of the phosphorus-doped polysilicon layer, and the steps include: the front sides of two semiconductor substrates are oppositely arranged and inserted into a tubular heating device, the thermal oxidation temperature is 500-600 ℃, and the thermal oxidation time is 150-300 s. In the case of forming the second oxide layer by the thermal oxidation method, the oxide layer may be formed on the front surface of the semiconductor substrate during the thermal oxidation treatment.
Illustratively, a second oxide layer is formed on the surface of the phosphorus-doped polysilicon layer by a wet chemical oxidation method, and the steps include: and soaking the phosphorus-doped polycrystalline silicon layer on the back of the N-type semiconductor substrate in an oxidizing solution for wet chemical oxidation treatment, wherein the oxidizing solution comprises a hydrochloric acid solution and ozone, the mass concentration of the hydrochloric acid solution is 0.1-0.5%, the concentration of the ozone is 20-30 ppm, and the soaking time is 30-60 s. The temperature is controlled to be 15-25 ℃ during soaking, the front surface of the semiconductor substrate is covered by a water film, and a borosilicate glass layer (BSG) on the front surface of the semiconductor substrate can also be used as a protective layer to prevent the front surface of the semiconductor substrate from reacting with an oxidizing solution when a second oxide layer is formed.
After the second oxide layer is formed by wet chemical oxidation, the semiconductor substrate may be subjected to water washing and baking.
Specifically, in step S42, the polysilicon layer on the front side of the semiconductor substrate may be cleaned for 100-120 seconds by using a prepared chemical solution, and the chemical solution for removing the spin-plating may be prepared by mixing, for example, 10ml of 36% hydrofluoric acid, 50ml of 70% concentrated nitric acid, 10ml of 98% concentrated sulfuric acid, and 30ml of water, which is only for illustration and is not limited herein.
Further, in step S43, the borosilicate glass layer (BSG) formed during the boron diffusion process is removed, and processes such as chemical etching and laser etching may be also used, which is not limited herein.
In this embodiment, after the step of removing the spin-on-glass and the step of removing the BSG are performed in the step of forming the second oxide layer, the borosilicate glass layer on the front surface of the semiconductor substrate can effectively prevent the front surface of the semiconductor substrate from reacting with the oxidizing solution in the wet chemical oxidation process, so that the borosilicate glass layer protects the front surface of the semiconductor substrate. After the step of forming the second oxide layer, the step of removing the spin-on-plating and the step of removing the BSG may be performed to simultaneously remove the oxide layer formed on the front surface of the semiconductor substrate in the thermal oxidation process. In the embodiment, the multilayer structure of the first oxide layer, the phosphorus-doped polysilicon layer, the second oxide layer and the back passivation layer is arranged on the back surface of the battery, so that unsaturated defects introduced between the doped polysilicon layer and the back passivation layer can be effectively improved, and the passivation effect is effectively improved.
Step S44, forming a back passivation layer on the surface of the second oxide layer. The backside passivation layer may include, but is not limited to, a single layer or a stacked layer structure of silicon nitride, silicon oxynitride, aluminum oxide, and the like.
For example, the back passivation layer is composed of silicon nitride. The silicon nitride film layer can play a role of an antireflection film, has good insulativity, compactness and stability and the capability of masking impurity ions, can passivate a silicon wafer, and obviously improves the photoelectric conversion efficiency of the solar cell.
Step S50, a front passivation layer is formed on the surface of the boron diffusion layer.
In some embodiments, the front passivation layer may include, but is not limited to, a single layer or a stacked layer structure of silicon nitride, silicon oxynitride, aluminum oxide, and the like. Of course, other types of passivation layers can be used for the front passivation layer, and the specific material of the front passivation layer is not limited in the present invention, for example, in other embodiments, the front passivation layer can also be a stack of silicon dioxide and silicon nitride, etc. The front passivation layer can generate a good passivation effect on the semiconductor substrate, and is beneficial to improving the conversion efficiency of the battery.
Step S60, forming an electrode on the front passivation layer and/or the back passivation layer.
In some embodiments, the back main grid and the back auxiliary grid can be printed on the back surface of the semiconductor substrate by using silver paste, and then dried, and the front main grid and the front auxiliary grid can be printed on the front surface of the semiconductor substrate by using aluminum-doped silver paste, and then dried, and finally sintered, so as to obtain the solar cell.
The front electrode passes through the front passivation layer to form ohmic contact with the boron diffusion layer; the back electrode penetrates through the back passivation layer and the second oxidation layer and then forms ohmic contact with the phosphorus-doped polycrystalline silicon layer, and the phosphorus-doped polycrystalline silicon layer and the first oxidation layer form a TopCon structure.
Fig. 2 is another flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure, and as shown in fig. 2, embodiment 2 of the present disclosure provides a method for manufacturing a solar cell, including the following steps:
step S10, performing boron diffusion on the textured N-type semiconductor substrate to form a boron diffusion layer;
step S20, carrying out back etching and oxidation on the semiconductor substrate to form a first oxidation layer, and depositing a polysilicon layer on the surface of the first oxidation layer;
step S30, performing phosphorus diffusion on the polysilicon layer to form a phosphorus-doped polysilicon layer;
step S40, forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer, and forming a back passivation layer on the surface of the second oxide layer;
step S50, forming a front passivation layer on the surface of the boron diffusion layer; and
step S60, forming an electrode on the front passivation layer and/or the back passivation layer.
Unlike embodiment 1, after step S30 and before step S40, the method further includes:
step S310, removing the polysilicon layer wound and plated on the front surface of the N-type semiconductor substrate;
step S320, removing the phosphosilicate glass layer formed in the phosphorus diffusion process and the borosilicate glass layer formed in the boron diffusion process.
In the embodiment, after the winding plating removing process, the PSG removing process and the BSG removing process, the second oxide layer is formed on the surface of the phosphorus-doped polycrystalline silicon layer, and compared with the existing Topcon battery preparation process, the unsaturated defect introduced between the doped polycrystalline silicon layer and the back passivation layer can be effectively overcome by only adding one second oxide layer forming process, so that the passivation effect is effectively improved, the original generation process is slightly changed, the yield of the battery in mass production is improved, and the production cost is reduced.
In some embodiments, the solar cell may be a solar cell having a Topcon structure, and as shown in fig. 3, the solar cell includes a first electrode 13, a first passivation layer 12, a boron diffusion layer 11, a semiconductor substrate 10, a first oxide layer 14, a phosphorus-doped polysilicon layer 15, a second oxide layer 16, a second passivation layer 17, and a second electrode 18, which are sequentially stacked from top to bottom. It should be noted that the first electrode 13 passes through the first passivation layer 12 to form an ohmic contact with the boron diffusion layer 11, the second electrode 18 passes through the second passivation layer 17, the second oxide layer 16 to form an ohmic contact with the phosphorus-doped polysilicon layer 15, and the phosphorus-doped polysilicon layer 15 and the first oxide layer 14 form a TopCon structure.
Optionally, the first oxide layer 14 is a tunneling oxide layer, such as an ultra-thin silicon oxide layer.
Optionally, the second oxide layer 16 is an ultra-thin oxide layer similar to the first oxide layer 14, for example, the second oxide layer 16 is a silicon oxide layer. For another example, the second oxide layer 16 is a titanium oxide layer. The thickness of the second oxide layer 16 is in the range of 0.5nm to 5 nm.
For the specific structure of the solar cell, such as the specific type of each layer, reference may be made to the description related to the preparation method of the solar cell, and the detailed description is omitted here.
In the embodiment of the present invention, the specific material of the first electrode 13 and the second electrode 18 is not limited. For example, the first electrode 13 is a silver electrode or a silver/aluminum electrode, and the second electrode 18 is a silver electrode.
The embodiment of the present invention does not limit the specific types of the first passivation layer 12 and the second passivation layer 17, and may be, for example, a silicon nitride layer, a silicon oxynitride layer, an aluminum oxide/silicon nitride stacked structure, or the like.
It should be noted that, in the embodiment of the present invention, the thickness of each layer structure in the solar cell is not limited, and can be adjusted and controlled by a person skilled in the art according to actual situations.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Although the present application has been described with reference to preferred embodiments, it is not intended to limit the scope of the claims, and many possible variations and modifications may be made by one skilled in the art without departing from the spirit of the application.
Claims (10)
1. A solar cell preparation method is characterized by comprising the following steps:
b diffusion is carried out on the textured N-type semiconductor substrate to form a boron diffusion layer;
carrying out back etching on the semiconductor substrate and then oxidizing to form a first oxidation layer, and depositing a polycrystalline silicon layer on the surface of the first oxidation layer;
performing phosphorus diffusion on the polycrystalline silicon layer to form a phosphorus-doped polycrystalline silicon layer;
forming a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer, and forming a back passivation layer on the surface of the second oxide layer;
forming a front passivation layer on the surface of the boron diffusion layer; and
forming an electrode on the front passivation layer and/or the back passivation layer.
2. The method for manufacturing a solar cell according to claim 1, wherein the thickness of the second oxide layer is 0.5nm to 5 nm; and/or the second oxide layer comprises at least one of silicon oxide, aluminum oxide and titanium oxide.
3. The method for preparing a solar cell according to claim 1, wherein after the phosphorus diffusion is performed on the polysilicon layer to form a phosphorus-doped polysilicon layer and before a second oxide layer is formed on the surface of the phosphorus-doped polysilicon layer, the method further comprises:
and removing the phosphosilicate glass layer formed in the phosphorus diffusion process.
4. The method for preparing a solar cell according to claim 3, wherein after forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer and before forming a back passivation layer on the surface of the second oxide layer, the method further comprises:
removing the polysilicon layer wound and plated on the front surface of the N-type semiconductor substrate;
and removing the borosilicate glass layer formed in the boron diffusion process.
5. The method for preparing a solar cell according to claim 1, wherein after the phosphorus diffusion is performed on the polysilicon layer to form a phosphorus-doped polysilicon layer and before a second oxide layer is formed on the surface of the phosphorus-doped polysilicon layer, the method further comprises:
removing the polysilicon layer wound and plated on the front surface of the N-type semiconductor substrate;
and removing the phosphorosilicate glass layer formed in the phosphorus diffusion process and the borosilicate glass layer formed in the boron diffusion process.
6. The method of claim 1, wherein forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer comprises:
forming a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer by adopting a wet chemical oxidation method and/or a thermal oxidation method; or the like, or, alternatively,
and depositing a second oxide layer on the surface of the phosphorus-doped polycrystalline silicon layer by adopting any one of a physical vapor deposition method, a chemical vapor deposition method, a plasma enhanced chemical vapor deposition method and an atomic layer deposition method.
7. The method for preparing a solar cell according to claim 6, wherein forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer comprises:
and forming a second oxidation layer on the surface of the phosphorus-doped polycrystalline silicon layer by adopting a thermal oxidation method, wherein the thermal oxidation temperature is 500-600 ℃, and the thermal oxidation time is 150-300 s.
8. The method for preparing a solar cell according to claim 6, wherein forming a second oxide layer on the surface of the phosphorus-doped polysilicon layer comprises:
and soaking the phosphorus-doped polycrystalline silicon layer on the back of the N-type semiconductor substrate in an oxidizing solution for wet chemical oxidation treatment, wherein the oxidizing solution comprises a hydrochloric acid solution and ozone, the mass concentration of the hydrochloric acid solution is 0.1-0.5%, the concentration of the ozone is 20-30 ppm, and the soaking time is 30-60 s.
9. The method of claim 3 or 5, wherein the removing the phosphosilicate glass layer formed during the phosphorus diffusion process comprises:
pickling the phosphorosilicate glass layer on the back surface of the N-type semiconductor substrate for 30-60 s by using prepared mixed acid, wherein the mixed acid comprises a hydrofluoric acid solution with the mass concentration of 2-10% and a hydrochloric acid solution with the mass concentration of 2-10%;
and washing and drying the back of the N-type semiconductor substrate after acid washing.
10. A solar cell obtained by the method according to any one of claims 1 to 9, wherein the solar cell comprises a first electrode, a first passivation layer, a boron diffusion layer, a semiconductor substrate, a first oxide layer, a phosphorus-doped polysilicon layer, a second oxide layer, a second passivation layer, and a second electrode, which are sequentially arranged from top to bottom.
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