CN110416324A - A kind of solar battery and preparation method thereof - Google Patents
A kind of solar battery and preparation method thereof Download PDFInfo
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- CN110416324A CN110416324A CN201910779816.1A CN201910779816A CN110416324A CN 110416324 A CN110416324 A CN 110416324A CN 201910779816 A CN201910779816 A CN 201910779816A CN 110416324 A CN110416324 A CN 110416324A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 153
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 153
- 239000010703 silicon Substances 0.000 claims abstract description 153
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000002161 passivation Methods 0.000 claims abstract description 91
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 74
- 229920005591 polysilicon Polymers 0.000 claims abstract description 71
- 238000009792 diffusion process Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 27
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 31
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
This application discloses a kind of solar batteries, including silicon substrate；Positioned at the diffusion layer of the first surface of silicon substrate；Positioned at diffusion layer away from first passivation layer on the surface of silicon substrate；Positioned at the first passivation layer away from the silicon oxynitride layer on the surface of diffusion layer；Positioned at silicon oxynitride layer away from the anti-reflection layer on the surface of the first passivation layer；Positioned at anti-reflection layer away from the first electrode on the surface of silicon oxynitride layer；Positioned at the tunnel layer of the second surface of silicon substrate；Positioned at tunnel layer away from the doped polysilicon layer on the surface of silicon substrate；Positioned at doped polysilicon layer away from second passivation layer on the surface of tunnel layer；Positioned at the second passivation layer away from the second electrode on the surface of doped polysilicon layer.The solar battery of the application is equipped with silicon oxynitride layer, and with anti-reflection layer collective effect, silicon oxynitride layer not only has passivation effect, enhances the passivation to diffusion layer, also has antireflection characteristic, enhances anti-reflection effect, promotes battery conversion efficiency.The application also provides a kind of preparation method having the above advantages.
Description
Technical field
This application involves technical field of solar batteries, more particularly to a kind of solar battery and preparation method thereof.
Background technique
Tunnel oxide passivation contact (Tunnel Oxide Passivated Contact, abbreviation TOPCon) technology be
Cell backside prepares one layer of tunnel oxide and one layer of doping type polysilicon layer, the two together form passivation contact structures, ask
With reference to Fig. 1.The structure provides good surface passivation for the back side of silicon wafer, and oxide layer can be such that how sub- electron tunneling entrance mixes
Miscellaneous type polysilicon layer stops few sub- hole-recombination simultaneously, so electronics in doping type polysilicon layer lateral transport by metal collection,
To significantly reduce metal contact recombination current, the open-circuit voltage and short circuit current of battery are improved.
Currently, generalling use aluminum oxide film layer as emitter layer using solar battery front side made from TOPCon technology
Passivation film, can achieve certain passivation effect, but the transfer efficiency of solar battery can only be promoted to a certain extent.
With the development of solar battery technology, requirement of the photovoltaic industry to conversion efficiency of solar cell is higher and higher, therefore, how
The transfer efficiency for further promoting solar battery, is those skilled in the art's technical problem urgently to be resolved.
Summary of the invention
The purpose of the application is to provide a kind of solar battery and preparation method thereof, to improve the conversion effect of solar battery
Rate.
In order to solve the above technical problems, the application provides a kind of solar battery, comprising:
Silicon substrate；
Positioned at the diffusion layer of the first surface of the silicon substrate；
Positioned at the diffusion layer away from first passivation layer on the surface of the silicon substrate；
Positioned at first passivation layer away from the silicon oxynitride layer on the surface of the diffusion layer；
Positioned at the silicon oxynitride layer away from the anti-reflection layer on the surface of first passivation layer；
Positioned at the anti-reflection layer away from the first electrode on the surface of the silicon oxynitride layer；
Positioned at the tunnel layer of the second surface of the silicon substrate；
Positioned at the tunnel layer away from the doped polysilicon layer on the surface of the silicon substrate；
Positioned at the doped polysilicon layer away from second passivation layer on the surface of the tunnel layer；
Positioned at second passivation layer away from the second electrode on the surface of the doped polysilicon layer；
Wherein, the first surface is opposite with the second surface.
Optionally, the Thickness range of the silicon oxynitride layer is 3 nanometers to 5 nanometers, including endpoint value.
Optionally, the Thickness range of the tunnel layer is 0.5 nanometer to 2 nanometers, including endpoint value.
Optionally, the Thickness range of the doped polysilicon layer is 100 nanometers to 300 nanometers, including endpoint value.
Optionally, the Thickness range of first passivation layer is 4 nanometers to 8 nanometers, including endpoint value.
The application also provides a kind of preparation method of solar battery, comprising:
Diffusion layer is formed in the first surface of silicon substrate；
The first passivation layer is formed away from the surface of the silicon substrate in the diffusion layer；
Silicon oxynitride layer is formed away from the surface of the diffusion layer in first passivation layer；
Anti-reflection layer is formed away from the surface of first passivation layer in the silicon oxynitride layer；
First electrode is formed away from the surface of the silicon oxynitride layer in the anti-reflection layer；
Tunnel layer is formed in the second surface of the silicon substrate；
Doped polysilicon layer is formed away from the surface of the silicon substrate in the tunnel layer；
The second passivation layer is formed away from the surface of the tunnel layer in the doped polysilicon layer；
Second electrode is formed away from the surface of the doped polysilicon layer in second passivation layer；
Wherein, the first surface is opposite with the second surface.
Optionally, forming doped polysilicon layer away from the surface of the silicon substrate in the tunnel layer includes:
Intrinsically polysilicon layer is formed away from the surface of the silicon substrate in the tunnel layer；
The intrinsically polysilicon layer is doped, the doped polysilicon layer is formed.
Optionally, the polysilicon layer is doped and includes:
Using ion implantation or diffusion method, the polysilicon layer is doped.
Optionally, forming tunnel layer in the second surface of the silicon substrate includes:
Using any method in high-temperature thermal oxidation method, nitric acid oxidation method, Ozonation, chemical vapour deposition technique,
The tunnel layer is formed in the second surface of the silicon substrate.
Optionally, before the first surface of silicon substrate forms diffusion layer, further includes:
Making herbs into wool is carried out to the silicon substrate.
Solar battery provided herein, comprising: silicon substrate；Positioned at the diffusion of the first surface of the silicon substrate
Layer；Positioned at the diffusion layer away from first passivation layer on the surface of the silicon substrate；Positioned at first passivation layer away from described
The silicon oxynitride layer on the surface of diffusion layer；Positioned at the silicon oxynitride layer away from the anti-reflection layer on the surface of first passivation layer；
Positioned at the anti-reflection layer away from the first electrode on the surface of the silicon oxynitride layer；Positioned at the tunnel of the second surface of the silicon substrate
Wear layer；Positioned at the tunnel layer away from the doped polysilicon layer on the surface of the silicon substrate；It is carried on the back positioned at the doped polysilicon layer
Second passivation layer on the surface from the tunnel layer；Positioned at second passivation layer away from the surface of the doped polysilicon layer
Second electrode；Wherein, the first surface is opposite with the second surface.
As it can be seen that solar battery provided herein, except including silicon substrate, diffusion layer, the first passivation layer, anti-reflection layer,
Tunnel layer, the second passivation layer, first electrode, further includes silicon oxynitride layer, with anti-reflection layer outside second electrode at doped polysilicon layer
Lamination film layer is formed, one side silicon oxynitride layer has passivation effect, with anti-reflection layer collective effect, enhances the passivation to diffusion layer
Effect, another aspect silicon oxynitride layer also have antireflection characteristic, with anti-reflection layer collective effect, enhance the anti-reflection of solar battery
Antireflective effect improves the quality of solar battery to promote the transfer efficiency of solar battery.In addition, the application also provides
A kind of preparation method of solar battery having the above advantages.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen
Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of solar battery provided by the embodiment of the present application；
Fig. 2 is a kind of flow chart of preparation method of solar battery provided by the embodiment of the present application.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description
The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than
Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall in the protection scope of this application.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Just as described in the background section, oxygen is generallyd use using solar battery front side made from TOPCon technology at present
Change passivation film of the aluminum membranous layer as emitter layer, can achieve certain passivation effect, but can only be promoted to a certain extent
The transfer efficiency of solar battery.
In view of this, this application provides a kind of solar batteries, referring to FIG. 1, Fig. 1 is provided by the embodiment of the present application
A kind of solar battery structural schematic diagram, which includes:
Silicon substrate 1；
Positioned at the diffusion layer 2 of the first surface of the silicon substrate 1；
Positioned at the diffusion layer 2 away from first passivation layer 3 on the surface of the silicon substrate 1；
Positioned at first passivation layer 3 away from the silicon oxynitride layer 4 on the surface of the diffusion layer 2；
Positioned at the silicon oxynitride layer 4 away from the anti-reflection layer 5 on the surface of first passivation layer 3；
Positioned at the anti-reflection layer 5 away from the first electrode 6 on the surface of the silicon oxynitride layer 4；
Positioned at the tunnel layer 7 of the second surface of the silicon substrate 1；
Positioned at the tunnel layer 7 away from the doped polysilicon layer 8 on the surface of the silicon substrate 1；
Positioned at the doped polysilicon layer 8 away from second passivation layer 9 on the surface of the tunnel layer 7；
Positioned at second passivation layer 9 away from the second electrode 10 on the surface of the doped polysilicon layer 8；
Wherein, the first surface is opposite with the second surface.
In the present embodiment, anti-reflection layer 5 is silicon nitride anti-reflection layer 5, and silicon nitride has antireflective and passivation double effects, nitrogen
The purpose of setting of silicon oxide layer 4 is that silicon oxynitride also has the double effects of passivation and antireflective, silicon oxynitride layer 4 and anti-reflection
Layer 5 forms the passivation film of stacking, enhances the passivation effect to diffusion layer 2, and silicon oxynitride layer 4 and anti-reflection layer 5 also form stacking
Anti-reflection film layer, the performance of anti-reflection is improved, to promote the photoelectric conversion efficiency of solar battery.
Optionally, in one embodiment of the application, silicon substrate 1 be N-type silicon substrate 1, but the application to this not
It is specifically limited, in the other embodiments of the application, silicon substrate 1 is P-type silicon substrate 1.
Specifically, diffusion layer 2 is obtained by being doped diffusion on 1 surface of silicon substrate, the type of diffusion layer 2 regards silicon substrate 1
Type depending on, to form PN junction.When silicon substrate 1 is N-type silicon substrate 1, diffusion layer 2 is diffuseed to form by 3A race element, such as boron
Diffusion layer 2；When silicon substrate 1 is P-type silicon substrate 1, diffusion layer 2 is by 5A race element, such as phosphorus, the diffusion layer 2 diffuseed to form.Into
One step, the sheet resistance of diffusion layer 2 is between 60ohm/sq~150ohm/sq.
It should be noted that being not specifically limited in the present embodiment to the type of the first passivation layer 3, depend on the circumstances.Example
Such as, when silicon substrate 1 is N-type silicon substrate 1, the first passivation layer 3 is aluminum oxide passivation layer, when silicon substrate 1 is P-type silicon substrate
When 1, the first passivation layer 3 is silicon dioxide passivation layer.
It should also be noted that, the type of tunnel layer 7 is also not specifically limited in the present embodiment, it can self-setting.Example
If tunnel layer 7 can be following any or any combination tunnel layer 7: silica tunnel layer 7, aluminum oxide tunnel layer
7, silicon nitride tunnel layer 7.
Specifically, doped polysilicon layer 8 is to be doped to obtain to intrinsically polysilicon layer, the type of doped polysilicon layer 8
Depending on the type of silicon substrate 1, for example, doped polysilicon layer 8 is n-type doping polycrystalline when silicon substrate 1 is N-type silicon substrate 1
Silicon, when silicon substrate 1 is P-type silicon substrate 1, doped polysilicon layer 8 is p-type DOPOS doped polycrystalline silicon.Further, doped polysilicon layer
8 sheet resistance is between 30ohm/sq~90ohm/sq.
Specifically, anti-reflection layer 5 is silicon nitride anti-reflection layer 5, the second passivation layer 9 can be silicon nitride passivation.
Further, the thickness of anti-reflection layer 5 is in 60nm between 90nm, and refractive index is between 2.0 to 2.3；Second passivation
The thickness of layer 9 is in 100nm between 150nm.
It should be pointed out that first surface is front namely the side to light of solar battery, correspondingly, second surface is
The back side of solar battery.
Based on any of the above embodiments, in one embodiment of the application, first electrode 6 and second electrode 10
It is metal electrode, for example, first electrode 6 is silver-colored aluminium electrode, second electrode 10 is silver electrode, but the application does not do this
Specific to limit, in the other embodiments of the application, first electrode 6 and second electrode 10 can also make for other conductive materials
Electrode, the preferred low material of good conductivity, resistivity specifically depends on the circumstances.
Solar battery provided by the present embodiment, except including silicon substrate 1, diffusion layer 2, the first passivation layer 3, anti-reflection layer 5,
Tunnel layer 7, the second passivation layer 9, first electrode 6, further includes silicon oxynitride layer 4 outside second electrode 10 at doped polysilicon layer 8, with
Anti-reflection layer 5 forms lamination film layer, and one side silicon oxynitride layer 4 has passivation effect, with 5 collective effect of anti-reflection layer, enhances to expansion
The passivation effect of layer 2 is dissipated, another aspect silicon oxynitride layer 4 also has antireflection characteristic, and with 5 collective effect of anti-reflection layer, enhancing is too
The anti-reflection effect of positive energy battery improves the quality of solar battery to promote the transfer efficiency of solar battery.
Preferably, in one embodiment of the application, the Thickness range of the silicon oxynitride layer 4 is 3 nanometers to 5
Nanometer, including endpoint value, avoid the thickness of silicon oxynitride layer 4 excessively thin, cause the local deposits effect of silicon oxynitride layer 4 poor, drop
The low passivation effect to diffusion layer 2, while avoiding the thickness of silicon oxynitride layer 4 blocked up, cause tunneling effect to disappear, so that the sun
The photoelectric conversion efficiency of energy battery reduces.
On the basis of the above embodiments, in one embodiment of the application, the Thickness range of the tunnel layer 7
Cause tunneling effect to reduce if the thickness of tunnel layer 7 is too big for 0.5 nanometer to 2 nanometers, including endpoint value, and also will increase
Production cost extends the preparation process time.
Preferably, in one embodiment of the application, the Thickness range of the doped polysilicon layer 8 is received for 100
Rice avoids the thickness of doped polysilicon layer 8 excessive, because the bigger absorption to light of thickness is tighter to 300 nanometers, including endpoint value
Weight, causes the efficiency of solar battery to reduce, while avoiding the thickness of doped polysilicon layer 8 too small, is forming DOPOS doped polycrystalline silicon
It is easy to cause doped chemical to enter silicon substrate 1 during layer 8, increases the defect of silicon substrate 1, surface recombination increases, and causes
The efficiency of solar battery reduces.
Based on any of the above embodiments, in one embodiment of the application, the thickness of first passivation layer 3
Value range is 4 nanometers to 8 nanometers, including endpoint value, if the thickness of the first passivation layer 3 is too small, passivation effect is poor, if also,
The thickness of first passivation layer 3 is too big, increases the dosage of raw material, leads to increased costs, while can also extend the process time, makes to produce
It can reduce.
The application also provides a kind of preparation method of solar battery, referring to FIG. 2, Fig. 2 is provided by the embodiment of the present application
A kind of preparation method of solar battery flow chart, this method comprises:
Step S101: diffusion layer is formed in the first surface of silicon substrate；
Specifically, the first surface in silicon substrate is diffused doping, diffusion layer is formed.
It is understood that utilizing 3A race element, such as boron, in the first table of silicon substrate when silicon substrate is N-type silicon substrate
Face is diffused；When silicon substrate is P-type silicon substrate, using 5A race element, such as phosphorus is expanded in the first surface of silicon substrate
It dissipates.Further, when forming diffusion layer, the sheet resistance of diffusion layer is controlled between 60ohm/sq~150ohm/sq.
It should be pointed out that needed after forming diffusion layer using etching apparatus removal Pyrex or phosphorosilicate glass, and
When silicon substrate is making herbs into wool back substrate, need to polish the second surface of silicon substrate.
Step S102: the first passivation layer is formed away from the surface of the silicon substrate in the diffusion layer；
Specifically, the first passivation layer can be prepared using Atomic layer deposition method, and when silicon substrate is N-type silicon substrate, In
Diffusion layer forms aluminum oxide passivation layer away from the surface of silicon substrate；When silicon substrate is P-type silicon substrate, deviate from diffusion layer
The surface of silicon substrate forms silicon dioxide passivation layer.
Preferably, the thickness of the first passivation layer of control formation is between 4 nanometers to 8 nanometers, including endpoint value, if first is blunt
Change layer thickness it is too small, passivation effect is poor, if also, the first passivation layer thickness it is too big, increase the dosage of raw material, cause into
This increase, while can also extend the process time, reduce production capacity.
Step S103: silicon oxynitride layer is formed away from the surface of the diffusion layer in first passivation layer；
Specifically, being passed through the gases such as nitrous oxide, silane, ammonia, nitrogen using plasma chemical vapor deposition process
Silicon oxynitride layer is prepared away from the surface of diffusion layer in the first passivation layer.
It should be noted that being not specifically limited in the present embodiment to the flow for the various gases being passed through, according to birefringence
The demand of rate adjusts the flow of various gases.
Preferably, the thickness for forming silicon oxynitride layer is controlled between 3 nanometers to 5 nanometers, including endpoint value, avoid nitrogen
The thickness setting of silicon oxide layer is excessively thin, causes the local deposits effect of silicon oxynitride layer poor, reduces the passivation effect to diffusion layer,
It avoids the thickness setting by silicon oxynitride layer blocked up simultaneously, causes tunneling effect to disappear, so that the photoelectric conversion of solar battery
Efficiency reduces.
Step S104: anti-reflection layer is formed away from the surface of first passivation layer in the silicon oxynitride layer；
Specifically, being prepared in silicon oxynitride layer away from the surface of the first passivation layer using plasma chemical vapor deposition process
Silicon nitride anti-reflection layer.
Preferably, the thickness for forming silicon nitride anti-reflection layer is controlled in 60nm between 90nm, controls silicon nitride anti-reflection layer
Refractive index is between 2.0 to 2.3.
Step S105: first electrode is formed away from the surface of the silicon oxynitride layer in the anti-reflection layer；
Specifically, first electrode is formed away from the surface of silicon oxynitride layer in anti-reflection layer using screen printing technique, wherein
First electrode can be silver-colored aluminium electrode.
Step S106: tunnel layer is formed in the second surface of the silicon substrate；
It should be noted that the method for forming tunnel layer and being not specifically limited in the present embodiment, can depend on the circumstances.
For example, can be using any method in high-temperature thermal oxidation method, nitric acid oxidation method, Ozonation, chemical vapour deposition technique.
Preferably, it is 0.5 nanometer to 2 nanometers that control, which forms the Thickness range of tunnel layer, including endpoint value, if by tunnel
The thickness setting for wearing layer is too big, will lead to tunneling effect reduction, and also will increase production cost, extends the preparation process time.
Step S107: doped polysilicon layer is formed away from the surface of the silicon substrate in the tunnel layer；
Optionally, forming doped polysilicon layer away from the surface of the silicon substrate in the tunnel layer includes:
Intrinsically polysilicon layer is formed away from the surface of the silicon substrate in the tunnel layer；
The intrinsically polysilicon layer is doped, doped polysilicon layer is formed.
Further, in one embodiment of the application, intrinsically polysilicon layer is doped using ion implantation
Doped polysilicon layer is prepared, but the application to this and is not specifically limited, and in the other embodiments of the application, utilizes expansion
Arching pushing is doped intrinsically polysilicon layer and prepares doped polysilicon layer.
Specifically, forming intrinsic polysilicon away from the surface of silicon substrate in tunnel layer using low-pressure chemical vapour deposition technique
Layer.
Preferably, it is 100 nanometers to 300 nanometers that control, which forms the Thickness range of intrinsically polysilicon layer, including endpoint
Value avoids the thickness setting by polysilicon layer excessive, because the bigger absorption to light of thickness is more serious, leads to solar battery
Efficiency reduces, while avoiding the thickness setting by intrinsically polysilicon layer too small, is easy during forming doped polysilicon layer
Cause doped chemical to enter silicon substrate, increase the defect of silicon substrate, surface recombination increases, and the efficiency of solar battery is caused to drop
It is low.
Preferably, the sheet resistance of doped polysilicon layer is controlled between 30ohm/sq~90ohm/sq.
It is understood that it is n-type doping polycrystalline that control, which forms doped polysilicon layer, when silicon substrate is N-type silicon substrate
Silicon, when silicon substrate is P-type silicon substrate, it is p-type DOPOS doped polycrystalline silicon that control, which forms doped polysilicon layer,.
It should be pointed out that needing to go using TMAH (tetramethylammonium hydroxide) solution after doped polysilicon layer is formed
Except the polysilicon layer around plating, and carry out the removal of phosphorosilicate glass or Pyrex, middle cleaning temperature between 50 DEG C~90 DEG C,
TMAH concentration is 2%~8%.
Step S108: the second passivation layer is formed away from the surface of the tunnel layer in the doped polysilicon layer；
Specifically, the second passivation layer formed is silicon nitride passivation.
Step S109: second electrode is formed away from the surface of the doped polysilicon layer in second passivation layer；
Specifically, forming second electrode using screen printing technique, second electrode can be silver electrode.
Wherein, the first surface is opposite with the second surface.
It should be noted that being not specifically limited in the present embodiment to the sequence of step S102 to S109, in solar-electricity
It can be exchanged according to process requirement in the preparation process of pond.
The solar battery of the preparation of preparation method of solar battery provided by the present embodiment, except including silicon substrate, diffusion
Outside layer, the first passivation layer, anti-reflection layer, tunnel layer, doped polysilicon layer, the second passivation layer, first electrode, second electrode, also wrap
Silicon oxynitride layer is included, forms lamination film layer with anti-reflection layer, one side silicon oxynitride layer has passivation effect, makees jointly with anti-reflection layer
With enhancing to the passivation effect of diffusion layer, another aspect silicon oxynitride layer also has antireflection characteristic, makees jointly with anti-reflection layer
With the anti-reflection effect for enhancing solar battery improves solar battery to promote the transfer efficiency of solar battery
Quality.
Based on any of the above embodiments, in one embodiment of the application, in the first surface shape of silicon substrate
Before diffusion layer, further includes:
Making herbs into wool is carried out to the silicon substrate, increases silicon substrate to the uptake of sunray, to promote solar battery
Efficiency.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Solar battery and preparation method thereof provided herein is described in detail above.It is used herein
The principle and implementation of this application are described for specific case, and the above embodiments are only used to help understand originally
The method and its core concept of application.It should be pointed out that for those skilled in the art, not departing from this Shen
Please under the premise of principle, can also to the application, some improvement and modification can also be carried out, these improvement and modification also fall into the application power
In the protection scope that benefit requires.
Claims (10)
1. a kind of solar battery characterized by comprising
Silicon substrate；
Positioned at the diffusion layer of the first surface of the silicon substrate；
Positioned at the diffusion layer away from first passivation layer on the surface of the silicon substrate；
Positioned at first passivation layer away from the silicon oxynitride layer on the surface of the diffusion layer；
Positioned at the silicon oxynitride layer away from the anti-reflection layer on the surface of first passivation layer；
Positioned at the anti-reflection layer away from the first electrode on the surface of the silicon oxynitride layer；
Positioned at the tunnel layer of the second surface of the silicon substrate；
Positioned at the tunnel layer away from the doped polysilicon layer on the surface of the silicon substrate；
Positioned at the doped polysilicon layer away from second passivation layer on the surface of the tunnel layer；
Positioned at second passivation layer away from the second electrode on the surface of the doped polysilicon layer；
Wherein, the first surface is opposite with the second surface.
2. solar battery as described in claim 1, which is characterized in that the Thickness range of the silicon oxynitride layer is 3
Nanometer is to 5 nanometers, including endpoint value.
3. solar battery as described in claim 1, which is characterized in that the Thickness range of the tunnel layer is received for 0.5
Rice is to 2 nanometers, including endpoint value.
4. solar battery as described in claim 1, which is characterized in that the Thickness range of the doped polysilicon layer is
100 nanometers to 300 nanometers, including endpoint value.
5. such as claim to 1 to 4 described in any item solar batteries, which is characterized in that the thickness of first passivation layer
Value range is 4 nanometers to 8 nanometers, including endpoint value.
6. a kind of preparation method of solar battery characterized by comprising
Diffusion layer is formed in the first surface of silicon substrate；
The first passivation layer is formed away from the surface of the silicon substrate in the diffusion layer；
Silicon oxynitride layer is formed away from the surface of the diffusion layer in first passivation layer；
Anti-reflection layer is formed away from the surface of first passivation layer in the silicon oxynitride layer；
First electrode is formed away from the surface of the silicon oxynitride layer in the anti-reflection layer；
Tunnel layer is formed in the second surface of the silicon substrate；
Doped polysilicon layer is formed away from the surface of the silicon substrate in the tunnel layer；
The second passivation layer is formed away from the surface of the tunnel layer in the doped polysilicon layer；
Second electrode is formed away from the surface of the doped polysilicon layer in second passivation layer；
Wherein, the first surface is opposite with the second surface.
7. solar battery as claimed in claim 6, which is characterized in that deviate from the surface of the silicon substrate in the tunnel layer
Forming doped polysilicon layer includes:
Intrinsically polysilicon layer is formed away from the surface of the silicon substrate in the tunnel layer；
The intrinsically polysilicon layer is doped, the doped polysilicon layer is formed.
8. solar battery as claimed in claim 7, which is characterized in that be doped to the polysilicon layer and include:
Using ion implantation or diffusion method, the polysilicon layer is doped.
9. solar battery as claimed in claim 6, which is characterized in that form tunnel layer in the second surface of the silicon substrate
Include:
Using any method in high-temperature thermal oxidation method, nitric acid oxidation method, Ozonation, chemical vapour deposition technique, in institute
The second surface for stating silicon substrate forms the tunnel layer.
10. such as the described in any item solar batteries of claim 6 to 9, which is characterized in that formed in the first surface of silicon substrate
Before diffusion layer, further includes:
Making herbs into wool is carried out to the silicon substrate.
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Application publication date: 20191105 |