CN111902379B - 清洗组合物 - Google Patents
清洗组合物 Download PDFInfo
- Publication number
- CN111902379B CN111902379B CN201980021716.0A CN201980021716A CN111902379B CN 111902379 B CN111902379 B CN 111902379B CN 201980021716 A CN201980021716 A CN 201980021716A CN 111902379 B CN111902379 B CN 111902379B
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- CN
- China
- Prior art keywords
- composition
- benzotriazole
- group
- semiconductor substrate
- acid
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 126
- 238000004140 cleaning Methods 0.000 title claims abstract description 104
- -1 alkyl sulfonic acid Chemical compound 0.000 claims abstract description 40
- 238000005260 corrosion Methods 0.000 claims abstract description 19
- 230000007797 corrosion Effects 0.000 claims abstract description 19
- 239000003112 inhibitor Substances 0.000 claims abstract description 16
- 150000003839 salts Chemical class 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 150000001414 amino alcohols Chemical class 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 15
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 15
- 239000002265 redox agent Substances 0.000 claims abstract description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 8
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 19
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 15
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- 150000001298 alcohols Chemical class 0.000 claims description 10
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 8
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 5
- 150000001565 benzotriazoles Chemical group 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- 125000001424 substituent group Chemical group 0.000 claims description 4
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 4
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 3
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical group C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 claims description 2
- CSUGYJWSPZKYLY-UHFFFAOYSA-N 5-(2,4,4-trimethylpentan-2-yl)-2h-benzotriazole Chemical compound C1=C(C(C)(C)CC(C)(C)C)C=CC2=NNN=C21 CSUGYJWSPZKYLY-UHFFFAOYSA-N 0.000 claims description 2
- YQTFAYALFNXJFA-UHFFFAOYSA-N 5-(2,4-dimethylpentan-2-yl)-2H-benzotriazole Chemical compound CC(C)CC(C)(C)c1ccc2[nH]nnc2c1 YQTFAYALFNXJFA-UHFFFAOYSA-N 0.000 claims description 2
- DYIFWSZJRUOXBY-UHFFFAOYSA-N 5-(2-methylbutan-2-yl)-2h-benzotriazole Chemical compound C1=C(C(C)(C)CC)C=CC2=NNN=C21 DYIFWSZJRUOXBY-UHFFFAOYSA-N 0.000 claims description 2
- CEKGSUMCMSBKNQ-UHFFFAOYSA-N 5-octyl-2h-benzotriazole Chemical compound C1=C(CCCCCCCC)C=CC2=NNN=C21 CEKGSUMCMSBKNQ-UHFFFAOYSA-N 0.000 claims description 2
- JLGADKXBPJXIOQ-UHFFFAOYSA-N 5-tert-butyl-2h-benzotriazole Chemical compound C1=C(C(C)(C)C)C=CC2=NNN=C21 JLGADKXBPJXIOQ-UHFFFAOYSA-N 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000001475 halogen functional group Chemical group 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- KWZNGMJJAMCNKY-UHFFFAOYSA-N 1-(2h-benzotriazol-4-yl)propan-1-ol Chemical compound CCC(O)C1=CC=CC2=NNN=C12 KWZNGMJJAMCNKY-UHFFFAOYSA-N 0.000 claims 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 claims 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims 1
- PHFUGYFADPADDV-UHFFFAOYSA-N 4-(2-methylpropyl)-2h-benzotriazole Chemical compound CC(C)CC1=CC=CC2=NNN=C12 PHFUGYFADPADDV-UHFFFAOYSA-N 0.000 claims 1
- DNJANJSHTMOQOV-UHFFFAOYSA-N 4-bromo-2h-benzotriazole Chemical compound BrC1=CC=CC2=C1N=NN2 DNJANJSHTMOQOV-UHFFFAOYSA-N 0.000 claims 1
- IPIVUPVIFPKFTG-UHFFFAOYSA-N 4-butyl-2h-benzotriazole Chemical compound CCCCC1=CC=CC2=C1N=NN2 IPIVUPVIFPKFTG-UHFFFAOYSA-N 0.000 claims 1
- NGKNMHFWZMHABQ-UHFFFAOYSA-N 4-chloro-2h-benzotriazole Chemical compound ClC1=CC=CC2=NNN=C12 NGKNMHFWZMHABQ-UHFFFAOYSA-N 0.000 claims 1
- QRHDSDJIMDCCKE-UHFFFAOYSA-N 4-ethyl-2h-benzotriazole Chemical compound CCC1=CC=CC2=C1N=NN2 QRHDSDJIMDCCKE-UHFFFAOYSA-N 0.000 claims 1
- ALDDXGSQUCGTDT-UHFFFAOYSA-N 4-fluoro-2h-benzotriazole Chemical compound FC1=CC=CC2=NNN=C12 ALDDXGSQUCGTDT-UHFFFAOYSA-N 0.000 claims 1
- OKFSBQOGHYYGRZ-UHFFFAOYSA-N 4-hexyl-2h-benzotriazole Chemical compound CCCCCCC1=CC=CC2=C1N=NN2 OKFSBQOGHYYGRZ-UHFFFAOYSA-N 0.000 claims 1
- UTMDJGPRCLQPBT-UHFFFAOYSA-N 4-nitro-1h-1,2,3-benzotriazole Chemical compound [O-][N+](=O)C1=CC=CC2=NNN=C12 UTMDJGPRCLQPBT-UHFFFAOYSA-N 0.000 claims 1
- TVOIATIUZOHKFY-UHFFFAOYSA-N 4-pentyl-2h-benzotriazole Chemical compound CCCCCC1=CC=CC2=NNN=C12 TVOIATIUZOHKFY-UHFFFAOYSA-N 0.000 claims 1
- KUVZHAJTEJICOW-UHFFFAOYSA-N 4-propan-2-yl-2h-benzotriazole Chemical compound CC(C)C1=CC=CC2=NNN=C12 KUVZHAJTEJICOW-UHFFFAOYSA-N 0.000 claims 1
- VXDLXVDZTJOKAO-UHFFFAOYSA-N 4-propyl-2h-benzotriazole Chemical compound CCCC1=CC=CC2=C1N=NN2 VXDLXVDZTJOKAO-UHFFFAOYSA-N 0.000 claims 1
- JQSSWPIJSFUBKX-UHFFFAOYSA-N 5-(2-methylpropyl)-2h-benzotriazole Chemical compound C1=C(CC(C)C)C=CC2=NNN=C21 JQSSWPIJSFUBKX-UHFFFAOYSA-N 0.000 claims 1
- YZTYEGCWRPJWEE-UHFFFAOYSA-N 5-(benzotriazol-2-yl)pentan-1-amine Chemical compound C1=CC=CC2=NN(CCCCCN)N=C21 YZTYEGCWRPJWEE-UHFFFAOYSA-N 0.000 claims 1
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims 1
- BQCIJWPKDPZNHD-UHFFFAOYSA-N 5-bromo-2h-benzotriazole Chemical compound C1=C(Br)C=CC2=NNN=C21 BQCIJWPKDPZNHD-UHFFFAOYSA-N 0.000 claims 1
- PZBQVZFITSVHAW-UHFFFAOYSA-N 5-chloro-2h-benzotriazole Chemical compound C1=C(Cl)C=CC2=NNN=C21 PZBQVZFITSVHAW-UHFFFAOYSA-N 0.000 claims 1
- ZWTWLIOPZJFEOO-UHFFFAOYSA-N 5-ethyl-2h-benzotriazole Chemical compound C1=C(CC)C=CC2=NNN=C21 ZWTWLIOPZJFEOO-UHFFFAOYSA-N 0.000 claims 1
- SYGGDXKMRDPIKQ-UHFFFAOYSA-N 5-fluoro-2h-benzotriazole Chemical compound C1=C(F)C=CC2=NNN=C21 SYGGDXKMRDPIKQ-UHFFFAOYSA-N 0.000 claims 1
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 claims 1
- KAGBXLIGSMIYGF-UHFFFAOYSA-N 5-pentyl-2h-benzotriazole Chemical compound C1=C(CCCCC)C=CC2=NNN=C21 KAGBXLIGSMIYGF-UHFFFAOYSA-N 0.000 claims 1
- WXSBVEKBZGNSDY-UHFFFAOYSA-N 5-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC2=NNN=C2C=C1 WXSBVEKBZGNSDY-UHFFFAOYSA-N 0.000 claims 1
- MBSXHYDCWYCSME-UHFFFAOYSA-N 5-propan-2-yl-2h-benzotriazole Chemical compound C1=C(C(C)C)C=CC2=NNN=C21 MBSXHYDCWYCSME-UHFFFAOYSA-N 0.000 claims 1
- CCBSHAWEHIDTIU-UHFFFAOYSA-N 5-propyl-2h-benzotriazole Chemical compound CCCC1=CC=C2NN=NC2=C1 CCBSHAWEHIDTIU-UHFFFAOYSA-N 0.000 claims 1
- 229910003070 TaOx Inorganic materials 0.000 claims 1
- ZIZZRMXDRJXWGK-UHFFFAOYSA-N [5-(2-ethylhexyl)-2H-benzotriazol-4-yl]methanamine Chemical compound C(C)C(CC1=C(C2=C(NN=N2)C=C1)CN)CCCC ZIZZRMXDRJXWGK-UHFFFAOYSA-N 0.000 claims 1
- JCXKHYLLVKZPKE-UHFFFAOYSA-N benzotriazol-1-amine Chemical compound C1=CC=C2N(N)N=NC2=C1 JCXKHYLLVKZPKE-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 238000012360 testing method Methods 0.000 description 24
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- 239000010410 layer Substances 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
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- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 4
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- RBLUCZPAJPJVMC-UHFFFAOYSA-N bicyclo[2.2.1]heptane-4-sulfonic acid Chemical compound C1CC2CCC1(S(=O)(=O)O)C2 RBLUCZPAJPJVMC-UHFFFAOYSA-N 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- OPUAWDUYWRUIIL-UHFFFAOYSA-N methanedisulfonic acid Chemical compound OS(=O)(=O)CS(O)(=O)=O OPUAWDUYWRUIIL-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- OOHAUGDGCWURIT-UHFFFAOYSA-N n,n-dipentylpentan-1-amine Chemical compound CCCCCN(CCCCC)CCCCC OOHAUGDGCWURIT-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- WLGDAKIJYPIYLR-UHFFFAOYSA-N octane-1-sulfonic acid Chemical compound CCCCCCCCS(O)(=O)=O WLGDAKIJYPIYLR-UHFFFAOYSA-N 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
- ZHZCYWWNFQUZOR-UHFFFAOYSA-N pent-4-en-2-ol Chemical compound CC(O)CC=C ZHZCYWWNFQUZOR-UHFFFAOYSA-N 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
- QZHDEAJFRJCDMF-UHFFFAOYSA-N perfluorohexanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QZHDEAJFRJCDMF-UHFFFAOYSA-N 0.000 description 1
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NIXKBAZVOQAHGC-UHFFFAOYSA-N phenylmethanesulfonic acid Chemical compound OS(=O)(=O)CC1=CC=CC=C1 NIXKBAZVOQAHGC-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical class OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical class S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
本发明涉及一种清洗组合物,其含有1)至少一种氧化还原剂;2)至少一种烷基磺酸或其盐,所述烷基磺酸含有经OH或NH2取代的烷基;3)至少一种氨基醇;4)至少一种腐蚀抑制剂;5)至少一种水溶性有机溶剂;6)水;以及7)任选地,至少一种pH调整剂。
Description
相关申请的交叉引用
本申请主张于2018年3月28日提交的美国专利临时申请第62/649,029号案的优先权,其内容通过引用整体并入作为参考。
技术领域
本发明涉及用于半导体基板的新型清洗组合物和清洗半导体基板的方法。更特别地,本发明涉及用于基板上沉积的金属层或介电材料层的等离子蚀刻以及在经由等离子灰化法移除大量抗蚀剂之后留在该基板上的残留物移除之后的半导体基板的清洗组合物。
背景技术
在集成电路元件制造中,光刻胶用作中间掩膜,用于借助于一系列之光刻及等离子蚀刻步骤,将标线的原始掩膜图案转移至晶圆基板上。集成电路元件制造过程中的关键步骤之一是从晶圆基板移除图案化的光刻胶膜。一般,此步骤通过二种方法之一实行。
一种方法涉及湿式剥除步骤,在该步骤中,使该光刻胶覆盖的基板与主要由有机溶剂及胺组成的光刻胶剥除剂溶液接触。然而,此种剥除剂溶液一般不能彻底及可靠地移除光刻胶膜,尤其是假若该光刻胶膜在制造期间已经曝露于UV辐射和等离子处理。一些光刻胶膜通过这种处理变得高度地交联,并且更难以溶解于剥除溶液中。此外,在这些常规湿式剥除方法中使用的化学品有时对于移除在使用含卤素气体的金属或氧化物层的等离子蚀刻期间形成的无机或有机金属残留材料为无效的。
移除光刻胶膜的另一方法涉及称为等离子灰化的方法中将经光刻胶涂覆的晶圆曝露于以氧为主的等离子以将光刻胶膜从基板燃烧掉。然而,等离子灰化在移除如上所示的等离子蚀刻副产物也不是完全有效。相反的,这些等离子蚀刻副产物的移除典型地通过随后使经加工的金属及介电薄膜曝露于某些清洗溶液中而完成。
含金属的基板一般是易腐蚀的。举例而言,诸如铝、铜、铝铜合金、氮化钨、钨、钴、氧化钛、其它金属及金属氮化物的基板会轻易地被腐蚀。进一步,集成电路元件中的介电质(例如,层间介电质或超低k介电质)可以通过使用传统清洗化学品而被蚀刻。此外,集成电路元件制造商所容忍的腐蚀数量变得愈来愈小,因为元件的几何结构缩小。
同时,因为残留物变得更难以移除且腐蚀需控制在更低的程度,清洗溶液应为使用安全且对环境友善的。
所以,该清洗溶液对于移除等离子蚀刻和等离子灰化残留物应为有效,且也应对于所有曝露的基板材料不具腐蚀性。
发明内容
本发明是针对非腐蚀性清洗组合物,其可用作多步骤制造过程中的中间步骤,从半导体基板移除残留物(例如,等离子蚀刻和/或等离子灰化残留物)。这些残留物包括一系列相对不溶的有机化合物诸如残留的光刻胶;有机金属化合物;金属氧化物,诸如氧化铝(AlOx)、氧化钛(TiOx)、氧化锆(ZrOx)、氧化钽(TaOx)和氧化铪(HfOx)(可以作为反应副产物由曝露的金属形成);金属诸如铝(Al)、铝/铜合金、铜(Cu)、钛(Ti)、钽(Ta)、钨(W)和钴(Co);金属氮化物诸如氮化铝(AlN)、氧化铝氮化物(AlOxNy)、氮化钛(TiN)、氮化钽(TaN)和氮化钨(WN);其合金;和其他物质的混合物。本文所述的清洗组合物的一个优点是其可以清洗所遇到的广范围的残留物,且一般对曝露的基板材料(例如,曝露的金属氧化物(诸如AlOx)、金属(诸如铝、铝/铜合金、铜、钛、钽、钨和钴)、金属氮化物(诸如氮化钛、氮化钽和氮化钨)、及其合金)无腐蚀性。
在一层面中,本发明表征一种清洗组合物,其包含(例如,由下列所组成或基本上由下列所组成):1)至少一种氧化还原剂;2)至少一种烷基磺酸或其盐,该烷基磺酸包含经OH或NH2取代的烷基;3)至少一种氨基醇;4)至少一种腐蚀抑制剂;5)至少一种有机溶剂;6)水;且7)任选地,至少一种pH调整剂。
在另一层面中,本发明表征一种清洗组合物,其包含(例如,由下列所组成或基本上由下列所组成):1)至少一种氧化还原剂;2)至少一种氨基醇;3)至少一种腐蚀抑制剂;4)至少一种有机溶剂;5)水;且6)任选地,至少一种pH调整剂。
在另一层面中,本发明表征了一种清洗来自半导体基板的残留物的方法。该方法包括使本文所述的清洗组合物与含有蚀刻后残留物和/或灰化后残留物的半导体基板接触。举例而言,该方法可以包括下列步骤:(A)提供含有蚀刻后及/或灰化后残余物的半导体基板;(B)使本文描述的清洗组合物与该半导体基板接触;(C)用适合的冲洗溶剂冲洗该半导体基板;及(D)任选地,借由任何移除该冲洗溶剂而不损害该半导体基板完整性的手段干燥该半导体基板。
本发明的一或多个实施例的细节于下面的说明中阐述。本发明的其他特征、目的和优点从说明书和权利要求来看将为显而易见的。
具体实施方式
如本文所界定,除非另有说明,所有表示的百分比应理解为该清洗组合物的总重量的重量百分比。除非另有说明,环境温度界定为约16至约27摄氏度(℃),诸如25℃。
如本文所使用,术语「层」和「膜」可互换使用。
如本文所界定,「水溶性」物质(例如,水溶性醇、酮、酯或醚)意指于25℃下在水中具有至少0.1重量%溶解度的物质。
一般地,本发明是针对一种清洗组合物(例如,非腐蚀性清洗组合物),其包括:1)至少一种氧化还原剂;2)至少一种烷基磺酸或其盐,该烷基磺酸包含经OH或NH2取代的烷基;3)至少一种氨基醇;4)至少一种腐蚀抑制剂;5)至少一种有机溶剂(例如,至少一种选自由水溶性醇、水溶性酮、水溶性酯和水溶性醚所组成的组的水溶性有机溶剂);6)水;和7)任选地,至少一种pH调整剂。
在一些实施例中,本发明的所述组合物含有至少一种(例如,两种、三种或四种)氧化还原剂,其被认为有助于溶解在半导体表面上的残留物,诸如光刻胶残留物、金属残留物、和金属氧化物残留物。如本文所使用,术语「氧化还原剂」意指在半导体清洗过程中可以诱发氧化和/或还原的化合物。适合的氧化还原剂的实例为羟胺。在一些实施例中,本文所述的氧化还原剂或清洗组合物不包括过氧化物(例如过氧化氢)。
在一些实施例中,所述至少一种氧化还原剂可以为本发明的清洗组合物的至少约6重量%(例如,至少约7重量%、至少约8重量%、至少约9重量%、至少约10重量%、至少约11重量%、或至少约12重量%),且/或至多约15重量%(例如,至多约14重量%、至多约13重量%、至多约12重量%、至多约11重量%、或至多约10重量%)。
在一些实施例中,本发明的清洗组合物包括至少一种(例如,两种、三种或四种)烷基磺酸或其盐,该烷基磺酸含有经OH或NH2取代的烷基。在一些实施例中,所述至少一种烷基磺酸包括式(I)的烷基磺酸:
R-SO3H (I),
其中R是经至少一个选自由OH和NH2所组成的组的取代基取代的C1-C10烷基。在一些实施例中,R是经至少一个OH取代的C1-C4烷基。举例而言,所述至少一种烷基磺酸或其盐(例如,不含金属离子诸如碱金属离子的盐)可以包括HO(CH2)2SO3H或HO(CH2)2SO3NH4。在一些实施例中,本发明的清洗组合物不含有上文所述的烷基磺酸或其盐(例如含有金属离子诸如碱金属离子的盐)。
在一些实施例中,所述至少一种烷基磺酸或其盐可以为本发明的清洗组合物的至少约0.3重量%(例如,至少约0.4重量%、至少约0.5重量%、至少约0.6重量%、至少约0.7重量%、至少约0.8重量%、至少约0.9重量%、至少约1重量%、至少约1.5重量%、或至少约2重量%),和/或至多约5重量%(例如,至多约4重量%、至多约3重量%、至多约2重量%、至多约1.5重量%、至多约1.2重量%、或至多约1重量%)。不希望受理论束缚,据信包括上文规定的数量的烷基磺酸或其盐的一种清洗组合物可以降低所述组合物对在清洗过程期间不意欲移除的某些曝露的基板材料(例如,AlOx)的腐蚀作用(例如,通过降低该清洗组合物对此种曝露的基板材料的蚀刻速率)。
在一些实施例中,本发明的清洗组合物含有至少一种(例如,两种、三种或四种)氨基醇。如本文所使用,术语「氨基醇」意指包括至少一个(例如,两个、三个或四个)氨基和至少一个(例如,两个、三个或四个)羟基的化合物。在一些实施例中,该氨基醇可以为式(I)的化合物:H2N-R-OH(I),其中R为C1-C6直链或支链烷撑或氧烷撑。适合的氨基醇的实例包括乙醇胺和2-(2-氨基乙氧基)乙醇。
在一些实施例中,所述至少一种氨基醇可以为本发明的清洗组合物的至少约5重量%(例如,至少约5.5重量%、至少约6重量%、至少约6.5重量%、至少约7重量%、或至少约7.5重量%),和/或至多约10重量%(例如,至多约9.5重量%、至多约9重量%、至多约8.5重量%、或至多约8重量%)。不希望受理论束缚,据信氨基醇可以有助于溶解在半导体表面上的残留物(诸如光刻胶残留物、金属残留物和金属氧化物残留物),通过例如作为氧化剂、与羟胺氢键结合使其在该清洗组合物中更有效、溶胀/溶解该蚀刻残留物、或上述机制的组合。
在一些实施例中,本发明的清洗组合物含有至少一种(例如,两种、三种或四种)腐蚀抑制剂。在一些实施例中,这种腐蚀抑制剂可以选自经取代或未经取代的苯并***。不希望受理论束缚,据信此种清洗组合物,当相较于没有任何腐蚀抑制剂的清洗组合物时,可以显示出与可能存在于半导体基板中且不应由该清洗组合物移除的材料(例如,AlOx或Co)显著改善的兼容性。
适合的经取代苯并***类包括,但不限于由至少一个选自由烷基、芳基、卤素基、氨基、硝基、烷氧基和羟基所组成的组的取代基取代的苯并***。经取代的苯并***还包括与一或多个芳基(例如苯基)或杂芳基稠合的那些。
腐蚀抑制剂的合适实例包括但不限于,苯并***(BTA)、5-氨基四唑、1-羟基苯并***、5-苯基硫醇-苯并***(5-phenylthiol-benzotriazole)、5-氯苯并***、4-氯苯并***、5-溴苯并***、4-溴苯并***、5-氟苯并***、4-氟苯并***、萘并***(naphthotriazole)、甲基苯并三氮唑(tolyltriazole)、5-苯基-苯并***、5-硝基苯并***、4-硝基苯并***、3-氨基-5-巯基-1,2,4-***、2-(5-氨基-戊基)-苯并***、1-氨基-苯并***、5-甲基苯并***、苯并***-5-羧酸、4-甲基苯并***、4-乙基苯并***、5-乙基苯并***、4-丙基苯并***、5-丙基苯并***、4-异丙基苯并***、5-异丙基苯并***、4-正丁基苯并***、5-正丁基苯并***、4-异丁基苯并***、5-异丁基苯并***、4-戊基苯并***、5-戊基苯并***、4-己基苯并***、5-己基苯并***、5-甲氧基苯并***、5-羟基苯并***、二羟丙基苯并***、1-[N,N-双(2-乙基己基)氨基甲基]-苯并***、5-叔丁基苯并***、5-(1',1'-二甲基丙基)-苯并***、5-(1',1',3'-三甲基丁基)苯并***、5-正辛基苯并***、和5-(1',1',3',3'-四甲基丁基)苯并***。
在一些实施例中,所述至少一种腐蚀抑制剂可以为本发明的清洗组合物的至少约0.1重量%(例如,至少约0.2重量%、至少约0.3重量%、至少约0.4重量%、或至少约0.5重量%),和/或至多约2重量%(例如,至多约1.8重量%、至多约1.6重量%、至多约1.4重量%、至多约1.2重量%、或至多约1重量%)。
在一些实施例中,本发明的清洗组合物含有至少一种(例如,两种、三种、四种或更多种)有机溶剂,例如,至少一种选自由水溶性醇、水溶性酮、水溶性酯和水溶性醚(例如二醇二醚)所组成的组的水溶性有机溶剂。
水溶性醇包括但不限于烷二醇(包括但不限于烷撑二醇)、二醇、烷氧基醇(包括但不限于二醇单醚)、饱和脂肪族单羟醇、不饱和非芳族单羟醇和含有环结构的低分子量醇。水溶性烷二醇的实例包括但不限于2-甲基-1,3-丙二醇、1,3-丙二醇、2,2-二甲基-1,3-丙二醇、1,4-丁二醇、1,3-丁二醇、1,2-丁二醇、2,3-丁二醇、频哪醇和烷撑二醇。水溶性烷撑二醇的实例包括但不限于乙二醇、丙二醇、己二醇、二乙二醇、二丙二醇、三乙二醇和四乙二醇。
水溶性烷氧基醇的实例包括但不限于3-甲氧基-3-甲基-1-丁醇、3-甲氧基-1-丁醇、1-甲氧基-2-丁醇和水溶性二醇单醚。水溶性二醇单醚之实例包括但不限于乙二醇单甲醚、乙二醇单***、乙二醇单正丙醚、乙二醇单异丙醚、乙二醇单正丁醚、二乙二醇单甲醚、二乙二醇单***、二乙二醇单丁醚、三乙二醇单甲醚、三乙二醇单***、三乙二醇单丁醚、1-甲氧基-2-丙醇、2-甲氧基-1-丙醇、1-乙氧基-2-丙醇、2-乙氧基-1-丙醇、丙二醇单正丙醚、二丙二醇单甲醚、二丙二醇单***、二丙二醇单正丙醚、三丙二醇单***、三丙二醇单甲醚、乙二醇单苄醚和二乙二醇单苄醚。
水溶性饱和脂肪族单羟醇的实例包括但不限于甲醇、乙醇、正丙醇、异丙醇、1-丁醇、2-丁醇、异丁醇、叔丁醇、2-戊醇、叔戊醇和1-己醇。
水溶性不饱和非芳族单羟醇的实例包括但不限于烯丙醇、炔丙醇、2-丁烯醇、3-丁烯醇和4-戊烯-2-醇。
含有环结构的水溶性低分子量醇的实例包括但不限于四氢糠醇、糠醇和1,3-环戊二醇。
水溶性酮的实例包括但不限于丙酮、环丁酮、环戊酮、双丙酮醇、2-丁酮、2,5-己二酮、1,4-环己二酮、3-羟基苯乙酮、1,3-环己烷二酮和环己酮。
水溶性酯的实例包括但不限于乙酸乙酯、二醇单酯(诸如乙二醇单乙酸酯、二乙二醇单乙酸酯)、和二醇单醚单酯(诸如丙二醇单甲醚乙酸酯、乙二醇单甲醚乙酸酯、丙二醇单***乙酸酯和乙二醇单***乙酸酯)。
在一些实施例中,所述至少一种有机溶剂可以为本发明的清洗组合物的至少约30重量%(例如,至少约35重量%、至少约40重量%、或至少约45重量%),和/或至多约50重量%(例如,至多约45重量%、至多约40重量%、或至多约30重量%)。
本发明的清洗组合物进一步包括水。较佳地,水是去离子化且超纯的,不含有有机污染物,且具有约4至约17百万欧姆的最小电阻。更佳地,该水的电阻为至少17百万欧姆。
在一些实施例中,水可以为本发明的清洗组合物的至少约20重量%(例如,至少约25重量%、至少约30重量%、至少约35重量%、或至少约40重量%),和/或至多约50重量%(例如,至多约45重量%、至多约40重量%、至多约35重量%、或至多约30重量%)。
在一些实施例中,本发明的清洗组合物可以任选地含有至少一种pH调整剂(例如,酸或碱),以控制pH为约8至约11。在一些实施例中,本发明的清洗组合物可以具有至少约8(例如,至少约8.5、至少约9、至少约9.5、或至少约10),至至多约11(例如,至多约10.5、至多约10、至多约9.5、或至多约9)的pH。不希望受理论束缚,据信具有低于8或高于11的pH的清洗组合物将会提高某些金属或介电材料的蚀刻速率至不希望的水平。取决于本文所述的该清洗组合物中所使用的成分的类型和数量,有效的pH可以变化。
所需的pH调整剂(假若有的话)的数量可以随着其他组分(例如羟胺、烷基磺酸、氨基醇和腐蚀抑制剂)在不同制剂中的浓度变化而变化,并且根据所采用的特定pH调整剂的分子量变化。一般,pH调整剂浓度范围为该清洗组合物的约1%至约10重量%。在一些实施例中,本发明的清洗组合物包括至少约1重量%(例如,至少约1.5重量%、至少约2重量%、或至少约2.5重量%),和/或至多约10重量%(例如,至多约9重量%、至多约8重量%、至多约7重量%、至多约6重量%、或至多约5重量%)的pH调整剂。
在一些实施例中,该pH调整剂不含任何金属离子(除了微量的金属离子杂质外)。适合的不含金属离子的pH调整剂包括酸和碱。可用作pH调整剂的适合酸包括羧酸和磺酸。示例性羧酸包括但不限于单羧酸、二羧酸、三羧酸、单羧酸的α-羟基酸和β-羟基酸、二羧酸的α-羟基酸或β-羟基酸、或三羧酸的α-羟基酸和β-羟基酸。在一些实施例中,所述至少一种羧酸包括柠檬酸、马来酸、富马酸、乳酸、乙醇酸、草酸、酒石酸、琥珀酸或苯甲酸。磺酸的实例包括但不限于甲磺酸、三氟甲磺酸、乙磺酸、三氟乙磺酸、全氟乙磺酸、全氟(乙氧基乙烷)磺酸、全氟(甲氧基乙烷)磺酸、十二烷基磺酸、全氟十二烷基磺酸、丁磺酸、全氟丁烷磺酸、丙磺酸、全氟丙烷磺酸、辛磺酸,全氟辛烷磺酸、甲二磺酸、2-甲基丙磺酸、环己基磺酸、樟脑磺酸(camphorsulfonic acid)、全氟己烷磺酸、乙二磺酸、苄基磺酸、羟基苯基甲磺酸、萘基甲磺酸和降冰片烷磺酸、苯磺酸、氯苯磺酸、溴苯磺酸、氟苯磺酸、羟基苯磺酸、硝基苯磺酸、2-羟基-5-磺基苯甲酸、苯二磺酸、甲苯磺酸(例如对甲苯磺酸)、甲基氯苯磺酸、十二烷基苯磺酸、丁基苯磺酸、环己基苯磺酸、苦基磺酸、二氯苯磺酸、二溴苯磺酸和2,4,5-三氯苯磺酸。
可用作pH调整剂的适合的碱包括氢氧化铵、氢氧化季铵类、一元胺(包含醇胺)、亚胺(诸如,1,8-二氮杂二环[5.4.0]-7-十一烯(DBU)、和1,5-二氮杂二环[4.3.0]-5-壬烯)、及胍盐(诸如,碳酸胍)。适合的氢氧化季铵的实例包括但不限于包含氢氧化四甲铵、氢氧化四乙铵、氢氧化四丙铵、氢氧化四丁铵、二甲基二乙基氢氧化铵、胆碱、四乙醇氢氧化铵、苄基三甲基氢氧化铵、苄基三乙基氢氧化铵及苄基三丁基氢氧化铵。适合的一元胺的实例包括但不限于三乙胺、三丁胺、三戊胺、乙醇胺、二乙醇胺、二乙胺、丁胺、二丁胺和苄胺。
此外,在一些实施例中,本发明的清洗组合物可能含有添加剂,诸如,额外的pH调整剂、额外的腐蚀抑制剂、额外的有机溶剂、界面活性剂、杀生物剂及消泡剂,作为任选的组分。适合的消泡剂的实例包括聚硅氧烷消泡剂(例如,聚二甲基硅氧烷)、聚乙二醇甲醚聚合物、环氧乙烷/环氧丙烷共聚物和缩水甘油醚封端的炔二醇乙氧基化物(诸如于美国专利第6,717,019号案中描述的那些,通过引用并入本文)。
在一些实施例中,本发明的清洗组合物可具体地排除一或多种添加剂组分,以任何组合(若多于一种)。这样的组分选自由下列所组成的组:聚合物、氧清除剂、包括氢氧化季铵、胺类、碱性碱类(诸如,NaOH、KOH、LiOH、Mg(OH)2及Ca(OH)2)的季铵盐、除消泡剂之外的界面活性剂类、消泡剂类、含氟化物的化合物、氧化剂(例如,过氧化物、过氧化氢、硝酸铁、碘酸钾、过锰酸钾、硝酸、亚氯酸铵、氯酸铵、碘酸铵、过硼酸铵、过氯酸铵、过碘酸铵、过硫酸铵、亚氯酸四甲铵、氯酸四甲铵、碘酸四甲铵、过硼酸四甲铵、过氯酸四甲铵、过碘酸四甲铵、过硫酸四甲铵、尿素过氧化氢、及过乙酸)、研磨剂、硅酸盐、羟基羧酸、羧酸和聚羧酸(例如,没有氨基的那些)、硅烷(例如烷氧基硅烷)、环状化合物(例如,含有至少两个环的环状化合物,诸如经取代或未经取代的萘、或经取代或未经取代的联苯醚)、螯合剂,非唑类腐蚀抑制剂、缓冲剂、胍、胍盐、酸诸如有机酸和无机酸(例如,磺酸、硫酸、亚硫酸、亚硝酸、硝酸、亚磷酸和磷酸)、吡咯烷酮、聚乙烯吡咯烷酮、金属盐(例如金属卤化物,诸如式WzMXy的金属卤化物,其中W选自H、碱金属或碱土金属、和无金属离子的氢氧化物碱基部分;M选自由Si、Ge、Sn、Pt、P、B、Au、Ir、Os、Cr、Ti、Zr、Rh、Ru和Sb所组成的组的金属;y为4至6;且z为1、2或3)、及除了本发明中所述的那些以外的腐蚀抑制剂。
本文所述的清洗组合物可以通过简单地将组分混合在一起而制备,或可以通过在试剂盒中混合两种组合物而制备。
在一些实施例中,本发明的清洗组合物并非特别设计用于自半导体基板移除大量的光刻胶膜。更确切地说,本发明的清洗组合物可以设计用以于通过干式或湿式剥除方法移除大量光刻胶后移除所有的残留物。所以,在一些实施例中,本发明的清洗方法较佳地在干式或湿式光刻胶剥除方法后采用。先于这种光刻胶剥除方法之前一般是图案转移过程,诸如,蚀刻或植入(implant)方法,或在图案转移前进行以修正掩膜误差。残留物的化学成份将取决先于清洗步骤之前的过程或一些过程。
任何适合的干式剥除方法可以使用,以从半导体基板移除大量光刻胶。适合的干式剥除方法的实例包括以氧为主的等离子灰化,诸如,氟/氧等离子或N2/H2等离子;臭氧气相处理;氟等离子处理;热H2气体处理(诸如,于美国专利第5,691,117号案中所述的,通过引用整体并入本文)等。此外,本领域技术人员所知的任何传统有机湿式剥除溶液可以使用以从半导体基板移除大量光刻胶。
与本发明的清洗方法组合使用的较佳剥除方法为干式剥除方法。较佳地,这种干式剥除方法是以氧为主的等离子灰化方法。此方法通过在真空条件(即,1托耳)在升高温度(典型地250℃)下施加反应性氧空气从该半导体基板移除大部份的光刻胶。有机材料通过此方法氧化,并与该加工气体一起移除。然而,此方法一般不会从该半导体基板移除所有的无机或有机金属污染物。随后用本发明的清洗组合物清洗半导体基板以移除这些残留物通常是必要的。
在一些实施例中,本发明表征从半导体基板清洗残留物的方法。该方法可以通过,例如,使本文所述的清洗组合物与含有蚀刻后残留物及/或灰化后残留物的半导体基板接触而执行。该方法可以进一步包括在接触步骤后用冲洗溶剂冲洗该半导体基板,及/或在冲洗步骤后干燥该半导体基板。在一些实施例中,该半导体基板可以进一步包括至少一种材料(例如,曝露的材料)或至少一种材料的层,其中该材料选自由下列所组成的组:Cu、Co、W、AlOx、AlN、AlOxNy、Ti、TiN、Ta、TaN、TiOx、ZrOx、HfOx和TaOx。
在一些实施例中,该清洗方法包括下列步骤:(A)提供含有蚀刻后和/或灰化后残留物的半导体基板;(B)使本文所述的清洗组合物与该半导体基板接触;(C)用适合的冲洗溶剂冲洗该半导体基板;和(D)任选地,通过任何移除该冲洗溶剂而不损害该半导体基板的完整性的适合手段干燥该半导体基板。在一些实施例中,该清洗方法进一步包括从通过上述方法获得的半导体基板形成半导体元件(例如,集成电路元件,诸如半导体芯片)。
在一些实施例中,该清洗方法基本上不移除半导体基板中的Co、氧化铝(AlOx或Al2O3)、氧化硅(SiOx)、氧化锆(ZrOx)、TiN、SiN、聚Si或Cu。举例而言,在一些实施例中,该方法移除不超过约5重量%(例如,不超过约3重量%、不超过约1重量%、不超过约0.5重量%、或不超过约0.1重量%)该半导体基板中的任何上述材料。
欲在此方法中清洗的该等半导体基板可以含有有机及有机金属残留物,且额外地,含有一系列需被移除的金属氧化物。半导体基板典型地系由硅、硅锗、如GaAs的第III-V族化合物,或其任何组合所构成。该半导体基板可以额外地含有曝露的集成电路结构,诸如,互连特征(interconnect feature),例如金属线及介电材料。用于互连特征的金属及金属合金包括但不限于铝、与铜合金之铝、铜、钛、钽、钴,及硅、氮化钛、氮化钽、钨、及其合金。该半导体基板还可以含有层间介电质、氧化硅、氮化硅、碳化硅、氧化钛及碳掺杂氧化硅的层。
该半导体基板可通过任何适合方法与清洗组合物接触,诸如,将该清洗组合物置于槽内并将该半导体基板浸没及/或浸没于该清洗组合物内,喷洒该清洗组合物于该半导体基板上,使该清洗组合物在半导体基板上流动,或其任何组合。较佳地,该半导体基板浸没于该清洗组合物内。
本发明的清洗组合物可能有效地用于高达约90℃的温度(例如,约25℃至约80℃,约30℃至约60℃,或约40℃至约60℃)。
类似地,清洗时间可以取决于所采用的特定清洗方法和温度在广范围变化。当于一浸没批次型方法中清洗时,适合的时间范围为,举例而言,高达约60分钟(例如,约1分钟至约60分钟,约3分钟至约20分钟,或约4分钟至约15分钟)。
对于单一晶圆方法的清洗时间的范围可为约10秒至约5分钟(例如,约15秒至约4分钟,约15秒至约3分钟,或约20秒至约2分钟)。
为了进一步促进本发明的清洗组合物的清洗能力,机械式搅动手段可以被采用。适合的搅动手段的实例包括在该基板上循环该清洗组合物、在该基板上流动或喷洒该清洗组合物,及在清洗过程期间超音波或兆音波搅动。半导体基板相对于地面的定向可能为任何角度。水平或垂直定向是较佳的。
本发明的清洗组合物可用于本领域技术人员已知的常规清洗工具中。本发明的所述组合物的显著优点为整体和部分包括相对非毒性、非腐蚀性和非反应性的组分,从而所述组合物在广范围的温度和加工时间中为稳定的。本发明的所述组合物与实际上用于构建现有和提出的用于批次和单一晶圆清洗的半导体晶圆清洗方法工具的所有材料为化学兼容地。
清洗随后,该半导体基板可以用适合的冲洗溶剂冲洗约5秒至高达约5分钟,伴随或不伴随搅动手段。适合的冲洗溶剂的实例包括但不限于去离子(DI)水、甲醇、乙醇、异丙醇、N-甲基吡咯啶酮、γ-丁内酯、二甲基亚砜、乳酸乙酯、及丙二醇单甲醚乙酸酯。另外,pH>8的水性冲洗液(诸如,稀释的水性氢氧化铵)可能采用的。冲洗溶剂的较佳实例包括但不限于稀释的水性氢氧化铵、DI水、甲醇、乙醇、及异丙醇。该溶剂可使用与用于施用本文所述的清洗组合物相似的手段施用。该清洗组合物可在冲洗步骤开始前已从该半导体基板移除,或其可在冲洗步骤开始时仍与该半导体基板接触。较佳地,冲洗步骤采用的温度为16℃至27℃。
任选地,该半导体基板在冲洗步骤后干燥。现有技术中所知的任何适合干燥段可能采用的。适合的干燥手段的实例包括旋转干燥、使干燥气体流过该半导体基板、或用加热装置(诸如,一热板或红外线灯)加热该半导体基板、马兰葛尼式(Marangoni)干燥、旋转移动式(Rotagoni)干燥、IPA干燥,或其任何组合。干燥时间将取决于采用的特定方法而定,但典型地为30秒至高达数分钟的层级。
在一些实施例中,使用本文所述的清洗组合物制造集成元件的方法可以包括下列步骤。首先,将光刻胶层施加至半导体基板。然后,由此获得的半导体基板可以进行图案转移过程,诸如,蚀刻或植入方法,以形成集成电路。然后,大量的光刻胶可以通过干式或湿式剥除方法(例如,以氧为主的等离子灰化方法)移除。半导体基板上留下的残留物然后可以使用本文所述的清洗组合物在上述方式中移除。该半导体基板随后可以加工以在该基板上形成一或多个额外的电路,或可以通过,举例而言,组装(例如,切割及接合)及封装(例如,芯片密封),加工以形成半导体芯片。
本文引用的所有出版物的内容(例如,专利、专利申请公开案和文章)通过引用整体并入本文中。
实例
本发明通过参考下列实例更详细地例示,该实例为了例示目的而不应被解释为限制本发明的发明范围。除非另有具体说明,列出的任何百分比为以重量计(wt%)。除非另有说明,测试期间的受控搅拌为用1英寸搅拌棒在300rpm下进行。
一般程序1
制剂混合
通过在搅拌下加入制剂的剩余组分至已计算数量的有机溶剂中制备清洗组合物样品。在达到均匀溶液后,加入任选的添加剂(假若使用的话)。
一般程序2
以烧杯测试的清洗评估
用所述的清洗组合物,使用已光刻图案化的、在等离子金属蚀刻机中蚀刻及随后通过氧等离子灰化彻底地移除光刻胶顶层的光刻胶/TiOx/SiN/Co/ILD(ILD=层间介电质)或光刻胶/TiOx/SiN/W/ILD的多层半导体基板实行从基板清洗PER(蚀刻后残留物)。
测试片使用4”长塑胶锁镊固定,然后该测试片可悬浮于含有大约200毫升的本发明的清洗组合物的500ml体积的烧杯内。在将该试片浸没于清洗组合物内之前,所述组合物伴随受控地搅拌预热至所需的测试条件温度(如所说明,典型地40℃或70℃)。然后该清洗测试通过以试片含有PER层的侧面向搅拌棒的方式,将通过塑胶镊固定的试片置于经加热的组合物内而实行。该试片在清洗组合物中保持静止一段时间(典型地2至5分钟),同时所述组合物在受控搅拌下维持在测试温度。当所需的清洗时间完成时,快速地从该清洗组合物移出试片,并置于装有大约400ml DI水的500ml塑胶烧杯内,在环境温度(~17℃)下伴随温和搅拌。将该试片留在DI水的烧杯中大约15秒,然后快速地移出,随后在异丙醇中冲洗约30秒。将该试片立即曝露于来自手持式吹氮***的氮气流,是的试片表面上的任何滴液自试片吹走,进一步彻底地干燥该试片元件表面。在此最终的氮气干燥步骤后,从塑胶镊固定器移除该试片,并置于经覆盖的塑胶载具内,该元件侧向上进行短期储存。然后,收集经清洗的测试片元件表面的关键特征的扫瞄式电子显微镜(SEM)影像。
一般程序3
以烧杯测试的材料兼容性评估
硅基板上的包覆层(blankets)W、硅基板上的SiO2上的TiOx、硅基板上的SiN、硅基板上的Al2O3、硅基板上的TiN、硅基板上的ILD被切割成大约1英寸×1英寸的方形测试片,用于材料兼容性测试。最初测量该测试片的厚度或片电阻,对于金属膜(Co、W)通过4点探针、CDE Resmap273,或对于介电膜(TiOx、SiN及ILD)通过椭圆偏振术(Elipsometry)使用Woollam M-2000X。然后将该测试片安装于4”长的塑胶锁镊上,并以一般程序3中的清洗程序所述处理10分钟,其中该试片的含有Co、W、TiOx、SiN、或ILD层的一侧面向搅拌棒。
在最终氮气干燥步骤后,从塑胶镊固定器移除该试片,并置于经覆盖的塑胶载具内。然后,在加工后测试片表面上收集后厚度或片电阻,对于金属膜(Co及W)使用四点探针、CDE Resmap 273,或对于介电膜(TiOx、SiN及ILD)通过椭圆偏振术使用Woollam M-2000X。
实例1
制剂实例1-11(FE-1至FE-11)和比较制剂实例1-16(CFE-1至CFE-16)根据一般程序1制备,并根据一般程序2和3评估。表1综述了这些制剂,而表2综述了Co、W、AlOx、TiOx和B掺杂W的清洗结果及蚀刻速率(ER)(埃/分钟)。表2中的结果为在65℃清洗温度在3-6分钟的清洗时间内获得的。
表1
HA=羟胺;PG=丙二醇;MEA=单乙醇胺;MSA=甲磺酸;IA=羟乙磺酸;IAAS=羟乙磺酸NH4盐;5MBTA=5-甲基苯并***;DBU=1,8-二氮杂双环[5.4.0]-7-十一烯。
表2
N/A=未测得
如表1和表2所显示,制剂FE-1至FE-11(含有适量的单乙醇胺和羟乙磺酸或其盐)显示出优异的蚀刻后残留物清洗能力及与在清洗过程中可能曝露的半导体材料(尤其是AlOx)优异的兼容性(即相对低的蚀刻速率)两者。相反地,制剂CFE-1至CFE-11(该等不含单乙醇胺)不能充分地清洗蚀刻后残留物。制剂CFE-12含有相对高数量的单乙醇胺。尽管制剂CFE-12清洗蚀刻后残留物,显示出相对高的AlOx蚀刻速率(即,相对低的与AlOx的兼容性)。制剂CFE-13和CFE-15含有相对低数量的单乙醇胺。该结果显示,尽管这两种制剂显示出相对低的AlOx蚀刻速率,它们没有充分地清洗蚀刻后残留物。制剂CFE-14含有相对低数量的DI水。该结果显示,尽管该制剂显示出相对低的AlOx蚀刻速率,其没有充分地清洗蚀刻后残留物。
其他实施方案在下列权利要求的范围内。
Claims (24)
1.一种清洗组合物,其包含:
1)至少一种氧化还原剂,所述至少一种氧化还原剂为所述组合物的6重量%至15重量%;
2)至少一种烷基磺酸或其盐,所述至少一种烷基磺酸或其盐为所述组合物的0.3重量%至5重量%,所述烷基磺酸包含经OH或NH2取代的烷基;
3)至少一种氨基醇,所述至少一种氨基醇为所述组合物的5重量%至10重量%;
4)至少一种腐蚀抑制剂,所述至少一种腐蚀抑制剂为所述组合物的0.1重量%至2重量%;
5)至少一种有机溶剂;
6)水;以及
7)任选地,至少一种pH调整剂。
2.如权利要求1所述的组合物,其中,所述组合物具有8至11的pH。
3.如权利要求1所述的组合物,其中,所述至少一种烷基磺酸为式(I)的烷基磺酸:
R-SO3H (I),
其中R是经至少一个选自由OH和NH2所组成的组的取代基取代的C1-C10烷基。
4.如权利要求3所述的组合物,其中,R是经至少一个OH取代的C1-C4烷基。
5.如权利要求1所述的组合物,其中,所述至少一种烷基磺酸或其盐包含HO(CH2)2SO3H或HO(CH2)2SO3NH4。
6.如权利要求1所述的组合物,其中,所述至少一种烷基磺酸或其盐为所述组合物的0.3重量%至4重量%。
7.如权利要求1所述的组合物,其中,所述至少一种氧化还原剂包含羟胺。
8.如权利要求1所述的组合物,其中,所述至少一种氧化还原剂为所述组合物的6重量%至14重量%。
9.如权利要求1所述的组合物,其中,所述至少一种氨基醇包含乙醇胺或2-(2-氨基乙氧基)乙醇。
10.如权利要求1所述的组合物,其中,所述至少一种氨基醇为所述组合物的5重量%至9.5重量%。
11.如权利要求1所述的组合物,其中,所述至少一种腐蚀抑制剂包含苯并***或经至少一个选自由烷基、芳基、卤素基、氨基、硝基、烷氧基和羟基所组成的组的取代基取代的苯并***。
12.如权利要求1所述的组合物,其中,所述至少一种腐蚀抑制剂包含选自由下列所组成的组的化合物:苯并***、5-氨基四唑、1-羟基苯并***、5-苯基硫醇-苯并***、5-氯苯并***、4-氯苯并***、5-溴苯并***、4-溴苯并***、5-氟苯并***、4-氟苯并***、萘并***、甲基苯并三氮唑、5-苯基-苯并***、5-硝基苯并***、4-硝基苯并***、3-氨基-5-巯基-1,2,4-***、2-(5-氨基-戊基)-苯并***、1-氨基-苯并***、5-甲基苯并***、苯并***-5-羧酸、4-甲基苯并***、4-乙基苯并***、5-乙基苯并***、4-丙基苯并***、5-丙基苯并***、4-异丙基苯并***、5-异丙基苯并***、4-正丁基苯并***、5-正丁基苯并***、4-异丁基苯并***、5-异丁基苯并***、4-戊基苯并***、5-戊基苯并***、4-己基苯并***、5-己基苯并***、5-甲氧基苯并***、5-羟基苯并***、二羟丙基苯并***、1- [N,N-双(2-乙基己基)氨基甲基]-苯并***、5-叔丁基苯并***、5-(1',1'-二甲基丙基)-苯并***、5-(1',1',3'-三甲基丁基)苯并***、5-正辛基苯并***、和5-(1',1',3',3'-四甲基丁基)苯并***。
13.如权利要求1所述的组合物,其中,所述至少一种腐蚀抑制剂为所述组合物的0.1重量%至1.8重量%。
14.如权利要求1所述的组合物,其中,所述组合物包含至少一种pH调整剂且所述至少一种pH调整剂包含酸。
15.如权利要求1所述的组合物,其中,所述组合物包含至少一种pH调整剂且所述至少一种pH调整剂为所述组合物的1重量%至10重量%。
16.如权利要求1所述的组合物,其中,所述至少一种有机溶剂包含选自由水溶性醇、水溶性酮、水溶性酯和水溶性醚所组成的组的溶剂。
17.如权利要求1所述的组合物,其中,所述至少一种有机溶剂包含选自由烷撑二醇和烷撑二醇醚所组成的组的溶剂。
18.如权利要求1所述的组合物,其中,所述至少一种有机溶剂为所述组合物的30重量%至50重量%。
19.如权利要求1所述的组合物,其中,水为所述组合物的20重量%至50重量%。
20.一种清洗半导体基板方法,其包含:
使如权利要求1至19中任一项所述的清洗组合物与含有蚀刻后残留物或灰化后残余物的半导体基板接触。
21.如权利要求20所述的方法,其中,所述半导体基板进一步包含至少一种选自由Cu、Co、W、AlOx、AlN、AlOxNy、Ti、TiN、Ta、TaN、TiOx、ZrOx、HfOx和TaOx所组成的组的材料。
22.如权利要求20所述的方法,进一步包含在接触步骤之后用冲洗溶剂冲洗所述半导体基板。
23.如权利要求22所述的方法, 进一步包含在冲洗步骤之后干燥所述半导体基板。
24.如权利要求20所述的方法,进一步包含从所述半导体基板形成半导体元件。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6602440B2 (en) * | 1997-12-19 | 2003-08-05 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
CN1831654A (zh) * | 2005-03-11 | 2006-09-13 | 关东化学株式会社 | 光致抗蚀剂剥离液组合物以及光致抗蚀剂的剥离方法 |
WO2017023677A1 (en) * | 2015-08-03 | 2017-02-09 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning composition |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1347008A (en) | 1970-11-13 | 1974-02-13 | Ciba Geigy Uk Ltd | Detergent compositions |
JPH03799A (ja) | 1989-05-29 | 1991-01-07 | Asahi Chem Res Lab Ltd | 水性フラックス洗浄剤組成物 |
US6825156B2 (en) | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
JP2731730B2 (ja) | 1993-12-22 | 1998-03-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | フォトレジストの除去方法 |
JP2911792B2 (ja) | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US20020111024A1 (en) | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US20040134873A1 (en) | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
US6265781B1 (en) | 1996-10-19 | 2001-07-24 | Micron Technology, Inc. | Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods |
US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
DE69841220D1 (de) | 1997-04-30 | 2009-11-19 | Minnesota Mining & Mfg | Verfahren zum planarisieren der oberfläche eines halbleiterwafers |
JP3898801B2 (ja) | 1997-06-17 | 2007-03-28 | 株式会社大和化成研究所 | 銀製品の変色皮膜除去剤及び除去方法 |
US7579308B2 (en) | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
GB2341092B (en) | 1998-09-07 | 2000-12-06 | Macgregor Keith Martin | Composition for the removal of biological and organic substances |
US6287586B1 (en) | 1998-09-18 | 2001-09-11 | The University Of British Columbia | Pharmaceutical compositions of vanadium biguanide complexes and their use |
DE69942615D1 (de) | 1998-10-23 | 2010-09-02 | Fujifilm Electronic Materials | Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend |
DE19849648A1 (de) | 1998-10-29 | 2000-05-04 | Benckiser Nv | Reinigungsmittelzusammensetzung |
US6310020B1 (en) | 1998-11-13 | 2001-10-30 | Kao Corporation | Stripping composition for resist |
US6194366B1 (en) | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6303557B1 (en) | 1999-11-16 | 2001-10-16 | S. C. Johnson Commercial Markets, Inc. | Fast acting disinfectant and cleaner containing a polymeric biguanide |
US6417147B2 (en) | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
US7456140B2 (en) | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
US6740589B2 (en) | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
US7754765B2 (en) | 2000-12-01 | 2010-07-13 | Radical Vision Therapeutics Inc | Copper chelators for treating ocular inflammation |
US6627587B2 (en) | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
JP4867092B2 (ja) | 2001-07-04 | 2012-02-01 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
TWI297102B (en) | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
KR100438015B1 (ko) | 2001-10-10 | 2004-06-30 | 엘지.필립스 엘시디 주식회사 | 구리용 레지스트 제거용 조성물 |
US7543592B2 (en) | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US20030119692A1 (en) | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
US6717019B2 (en) | 2002-01-30 | 2004-04-06 | Air Products And Chemicals, Inc. | Glycidyl ether-capped acetylenic diol ethoxylate surfactants |
US6773873B2 (en) | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
AU2003225178A1 (en) | 2002-04-24 | 2003-11-10 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
US8003587B2 (en) | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
CA2488737A1 (en) | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker, Inc. | Microelectronic cleaning and arc remover compositions |
JP2004101849A (ja) | 2002-09-09 | 2004-04-02 | Mitsubishi Gas Chem Co Inc | 洗浄剤組成物 |
TWI227271B (en) | 2002-10-04 | 2005-02-01 | Merck Kanto Advanced Chemical | Post chemical mechanical polishing (CMP) cleaning solution |
US8236485B2 (en) | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
TWI324362B (en) | 2003-01-10 | 2010-05-01 | Kanto Kagaku | Cleaning solution for semiconductor substrate |
US6951710B2 (en) | 2003-05-23 | 2005-10-04 | Air Products And Chemicals, Inc. | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof |
TWI315030B (en) | 2003-06-26 | 2009-09-21 | Dongwoo Fine Chem Co Ltd | Photoresist stripper composition, and exfoliation method of a photoresist using it |
TWI362415B (en) | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
US7671001B2 (en) | 2003-10-29 | 2010-03-02 | Mallinckrodt Baker, Inc. | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
JP2005223030A (ja) | 2004-02-04 | 2005-08-18 | Mitsubishi Gas Chem Co Inc | 半導体基体の洗浄剤とその洗浄方法 |
KR100795364B1 (ko) | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
KR100606187B1 (ko) | 2004-07-14 | 2006-08-01 | 테크노세미켐 주식회사 | 반도체 기판 세정용 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
US8178482B2 (en) | 2004-08-03 | 2012-05-15 | Avantor Performance Materials, Inc. | Cleaning compositions for microelectronic substrates |
US20060073997A1 (en) | 2004-09-30 | 2006-04-06 | Lam Research Corporation | Solutions for cleaning silicon semiconductors or silicon oxides |
US20060094613A1 (en) | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
WO2006081406A1 (en) | 2005-01-27 | 2006-08-03 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
US7365045B2 (en) | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
US8114220B2 (en) | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
JP2007003617A (ja) | 2005-06-21 | 2007-01-11 | Showa Denko Kk | 剥離液組成物 |
US7700533B2 (en) | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
TWI339780B (en) | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
WO2007027522A2 (en) | 2005-08-29 | 2007-03-08 | Advanced Technology Materials, Inc. | Composition and method for removing thick film photoresist |
WO2007120259A2 (en) | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
CN101454872B (zh) | 2006-05-26 | 2011-04-06 | Lg化学株式会社 | 光刻胶剥离剂组合物和用该光刻胶剥离剂组合物剥离光刻胶的方法 |
US7947637B2 (en) | 2006-06-30 | 2011-05-24 | Fujifilm Electronic Materials, U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
US20080039356A1 (en) * | 2006-07-27 | 2008-02-14 | Honeywell International Inc. | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
US20080139436A1 (en) | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
US20080076688A1 (en) | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
JP5237300B2 (ja) | 2006-12-21 | 2013-07-17 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | エッチング後残留物を除去するための液体洗浄剤 |
KR101341707B1 (ko) | 2007-06-28 | 2013-12-16 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 및 이를 이용한 박리방법 |
TW200940706A (en) | 2007-10-29 | 2009-10-01 | Ekc Technology Inc | Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions |
WO2009058287A1 (en) | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Process of purification of amidoxime containing cleaning solutions and their use |
US20090120457A1 (en) | 2007-11-09 | 2009-05-14 | Surface Chemistry Discoveries, Inc. | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices |
US8404626B2 (en) | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
US7825079B2 (en) | 2008-05-12 | 2010-11-02 | Ekc Technology, Inc. | Cleaning composition comprising a chelant and quaternary ammonium hydroxide mixture |
JP5561914B2 (ja) | 2008-05-16 | 2014-07-30 | 関東化学株式会社 | 半導体基板洗浄液組成物 |
CN101597548A (zh) | 2008-06-06 | 2009-12-09 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
WO2010048139A2 (en) | 2008-10-21 | 2010-04-29 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
US8361237B2 (en) | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
JP2012516046A (ja) | 2009-01-22 | 2012-07-12 | ビーエーエスエフ ソシエタス・ヨーロピア | 化学機械的研磨後洗浄用組成物 |
WO2010104816A1 (en) | 2009-03-11 | 2010-09-16 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
US8518865B2 (en) | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
EP2475000B1 (en) * | 2009-09-02 | 2015-07-01 | Wako Pure Chemical Industries, Ltd. | Processing agent composition for semiconductor surface and method for processing semiconductor surface using same |
JP5857740B2 (ja) | 2009-09-03 | 2016-02-10 | 荒川化学工業株式会社 | 鉛フリーハンダ水溶性フラックス除去用洗浄剤、除去方法及び洗浄方法 |
JP5646882B2 (ja) | 2009-09-30 | 2014-12-24 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び半導体装置の製造方法 |
SG182789A1 (en) | 2010-01-29 | 2012-09-27 | Advanced Tech Materials | Cleaning agent for semiconductor provided with metal wiring |
JP5513196B2 (ja) | 2010-03-25 | 2014-06-04 | 富士フイルム株式会社 | 洗浄組成物及び半導体装置の製造方法 |
JP2012021151A (ja) | 2010-06-16 | 2012-02-02 | Sanyo Chem Ind Ltd | 銅配線半導体用洗浄剤 |
JP5508158B2 (ja) | 2010-06-22 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び、半導体装置の製造方法 |
TWI548738B (zh) | 2010-07-16 | 2016-09-11 | 安堤格里斯公司 | 用於移除蝕刻後殘餘物之水性清潔劑 |
JP5674373B2 (ja) | 2010-07-30 | 2015-02-25 | 富士フイルム株式会社 | 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法 |
JP2012046685A (ja) | 2010-08-30 | 2012-03-08 | Fujifilm Corp | 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法 |
CN102477359B (zh) | 2010-11-26 | 2015-12-02 | 安集微电子(上海)有限公司 | 一种化学机械抛光清洗液 |
WO2012161790A1 (en) | 2011-02-24 | 2012-11-29 | John Moore | Concentrated chemical composition and method for removing photoresist during microelectric fabrication |
US8889609B2 (en) | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
WO2012148967A2 (en) | 2011-04-25 | 2012-11-01 | Air Products And Chemicals, Inc. | Cleaning lead-frames to improve wirebonding process |
CN105869997A (zh) | 2011-10-21 | 2016-08-17 | 安格斯公司 | 无胺cmp后组合物及其使用方法 |
JP2013104104A (ja) | 2011-11-14 | 2013-05-30 | Mec Kk | エッチング液、補給液及び銅配線の形成方法 |
JP6329909B2 (ja) | 2011-12-28 | 2018-05-23 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
US8916429B2 (en) | 2012-04-30 | 2014-12-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Aqueous cleaning techniques and compositions for use in semiconductor device manufacturing |
US20150162213A1 (en) * | 2012-05-11 | 2015-06-11 | Advanced Technology Materials, Inc. | Formulations for wet etching nipt during silicide fabrication |
US9536730B2 (en) * | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
CN105683336A (zh) | 2013-06-06 | 2016-06-15 | 高级技术材料公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
CN105873691B (zh) | 2013-12-06 | 2018-04-20 | 富士胶片电子材料美国有限公司 | 用于去除表面上的残余物的清洗调配物 |
US10073351B2 (en) * | 2014-12-23 | 2018-09-11 | Versum Materials Us, Llc | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
CN109790028A (zh) | 2016-10-06 | 2019-05-21 | 富士胶片电子材料美国有限公司 | 用于移除半导体基材上残余物的清洁制剂 |
JP7077505B2 (ja) * | 2017-03-24 | 2022-05-31 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 半導体基板上の残渣を除去するための洗浄組成物 |
US10752867B2 (en) | 2018-03-28 | 2020-08-25 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning compositions |
-
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- 2019-02-19 US US16/278,875 patent/US10752867B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6602440B2 (en) * | 1997-12-19 | 2003-08-05 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
CN1831654A (zh) * | 2005-03-11 | 2006-09-13 | 关东化学株式会社 | 光致抗蚀剂剥离液组合物以及光致抗蚀剂的剥离方法 |
WO2017023677A1 (en) * | 2015-08-03 | 2017-02-09 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning composition |
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US20220145221A1 (en) | 2022-05-12 |
TWI818958B (zh) | 2023-10-21 |
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JP2023133294A (ja) | 2023-09-22 |
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US20200332231A1 (en) | 2020-10-22 |
WO2019190653A1 (en) | 2019-10-03 |
EP3774680A1 (en) | 2021-02-17 |
IL301529B1 (en) | 2024-07-01 |
CN111902379A (zh) | 2020-11-06 |
KR20200138742A (ko) | 2020-12-10 |
TW202405151A (zh) | 2024-02-01 |
TW201942349A (zh) | 2019-11-01 |
SG11202008828VA (en) | 2020-10-29 |
JP2021519836A (ja) | 2021-08-12 |
US11407966B2 (en) | 2022-08-09 |
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