CN111716242A - 背面研磨带 - Google Patents
背面研磨带 Download PDFInfo
- Publication number
- CN111716242A CN111716242A CN202010182172.0A CN202010182172A CN111716242A CN 111716242 A CN111716242 A CN 111716242A CN 202010182172 A CN202010182172 A CN 202010182172A CN 111716242 A CN111716242 A CN 111716242A
- Authority
- CN
- China
- Prior art keywords
- sensitive adhesive
- resin
- pressure
- substrate
- grinding tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
- C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
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Abstract
本发明涉及背面研磨带。提供一种耐热性优异并且即使在高真空和高温工艺中也可以适宜地使用的背面研磨带。背面研磨带包括:基材;和在所述基材的一面上形成的压敏粘合剂层。基材的弯曲刚性为0.2N·mm2以上,在400nm波长下的透光率为10%以上,并且构成基材的树脂的熔点为200℃以上。
Description
技术领域
本发明涉及背面研磨带。
背景技术
半导体晶片以大直径状态制造,并且在其正面上形成图案之后,研磨其背面(进行背面研磨),使得晶片的厚度通常可以减小到约40μm至约600μm。接下来,实施湿法蚀刻步骤,例如用于调整半导体晶片表面,并且将研磨的半导体晶片切断并分离(切割)成小的元件片。之后,将小元件片进一步转移至安装步骤。因此,获得期望的半导体元件。在背面研磨步骤中,使用压敏粘合带(背面研磨带)来固定半导体晶片或保护与其被研磨表面相反的表面(例如,日本专利申请特开No.2011-151163)。
在绝缘栅双极晶体管(IGBT)等的制造工艺中,为了改善器件的特性,可以实施背面研磨步骤,直到晶片的厚度变为100μm以下。当将晶片研磨为这样薄的形状时,使用可轻轻剥离的紫外线固化型压敏粘合带。半导体晶片进行背面研磨步骤,然后进行除去其抗蚀剂的灰化步骤。在灰化步骤中,将晶片置于具有高真空度和高达200℃以上的温度的状态下。因此,所使用的压敏粘合带的基材可能变形,或在半导体晶片和该带的压敏粘合剂层之间可能发生脱层。结果,可能发生以下问题。晶片不能令人满意地吸附至平台上,并且压敏粘合带不能令人满意地剥离。
发明内容
本发明为解决上述现有问题而作出,并且本发明的主要目的为提供耐热性优异并且即使在高真空和高温工艺中也可以适宜地使用的背面研磨带。
根据本发明的至少一个实施方案,提供一种背面研磨带,其包括:基材;和在所述基材的一面上形成的压敏粘合剂层。所述基材的弯曲刚性为0.2N·mm2以上,在400nm波长下的透光率为10%以上,并且构成所述基材的树脂的熔点为200℃以上。
在至少一个实施方案中,所述基材的拉伸弹性模量为1,500MPa以上。
在至少一个实施方案中,所述基材的厚度为30μm~200μm。
在至少一个实施方案中,构成所述基材的树脂包括选自由聚对苯二甲酸乙二醇酯树脂、聚酰亚胺系树脂、聚醚醚酮树脂、聚酰胺-酰亚胺树脂、聚萘二甲酸乙二醇酯树脂、聚苯硫醚树脂和聚醚酰亚胺树脂组成的组中的至少一种。
在至少一个实施方案中,所述压敏粘合剂层由活性能量射线固化型压敏粘合剂组合物形成。
根据本发明的至少一个实施方案,提供了一种耐热性优异并且即使在高真空和高温工艺中也可以适宜地使用的背面研磨带。根据本发明的至少一个实施方案的背面研磨带包括:基材;和在基材的一面上形成的压敏粘合剂层。基材的弯曲刚性为0.2N·mm2以上,在400nm波长下的透光率为10%以上,并且构成该基材的树脂的熔点为200℃以上。当使用包括此类基材的背面研磨带时,即使在对晶片进行高真空和高温灰化处理的情况下,也防止了晶片和压敏粘合剂层之间发生脱层,并且即使在形成例如活性能量射线固化型压敏粘合剂组合物的可轻轻剥离的压敏粘合剂层的情况下,也可以令人满意地保持其特性。此外,可以防止如晶片不充分吸附至平台等不便。
附图说明
图1为根据本发明的至少一个实施方案的背面研磨带的示意性截面图。
具体实施方式
以下描述本发明的实施方案。然而,本发明不限于这些实施方案。
A.背面研磨带的整体构成
图1为根据本发明的至少一个实施方案的背面研磨带的示意性截面图。图示实例中的背面研磨带100包括基材20和在该基材20的一面上形成的压敏粘合剂层10。在实际使用中,直到带被使用时,将隔离膜以可剥离的方式临时地粘合至压敏粘合剂层10,用以适当保护压敏粘合剂层10。在背面研磨带100中,在制造半导体晶片的步骤结束后,通常用活性能量射线照射压敏粘合剂层10。因此,压敏粘合剂层固化以降低压敏粘合强度,由此从被粘物(半导体晶片)上剥离该带。
此外,基材20的其上形成压敏粘合剂层的表面可以根据目的进行任意适当的表面处理。表面处理的实例包括铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离辐射处理、消光处理、电晕放电处理、底漆处理、和交联处理。
基材20的弯曲刚性为0.2N·mm2以上,在400nm波长下的透光率为10%以上,并且构成该基材的树脂的熔点为200℃以上。此外,基材20的厚度优选30μm~200μm,更优选50μm~175μm。当使用包括此类基材的背面研磨带时,其耐热性得到改善,由此即使在对晶片进行高真空和高温灰化处理的情况下,也可以防止晶片和压敏粘合剂层之间发生脱层。
背面研磨带100的厚度可以设定为任意适当的厚度。背面研磨带100的厚度优选40μm~500μm,更优选150μm~400μm。当背面研磨带100的厚度落入所述范围内时,该带可以适宜地用于半导体晶片的背面研磨步骤。
压敏粘合剂层10的厚度优选10μm~300μm,更优选15μm~200μm。
B.压敏粘合剂层
压敏粘合剂层可以通过使用任意适当的压敏粘合剂组合物来形成。压敏粘合剂组合物优选活性能量射线固化型压敏粘合剂组合物。活性能量射线固化型压敏粘合剂组合物可以通过用活性能量射线照射来降低压敏粘合强度。活性能量射线固化型压敏粘合剂组合物的使用可以提供可轻轻剥离的背面研磨带。活性能量射线的实例包括γ射线、紫外光、可见光、红外线(热射线)、无线电波、α射线、β射线、电子束、等离子体流、电离射线和粒子束。其中,紫外光为优选的。
压敏粘合剂组合物中的基础聚合物为例如在以下位置的至少之一处:在其侧链中、在其主链中、或在主链末端具有固化性官能团的丙烯酸系树脂,橡胶系树脂、有机硅系树脂、或聚乙烯基醚系树脂。此外,压敏粘合剂组合物可以包含固化性单体组分和/或固化性低聚物组分。固化性单体组分和/或固化性低聚物组分可以添加至包含具有固化性官能团的基础聚合物的压敏粘合剂组合物中。
任意适当的丙烯酸系树脂可以用作上述丙烯酸系树脂。丙烯酸系树脂的实例为包含(甲基)丙烯酸酯作为主要单体组分的树脂。(甲基)丙烯酸酯的实例包括:如甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯和二十烷基酯等各自包括具有1~30个碳原子的直链状或支链状烷基的(甲基)丙烯酸烷基酯;和如环戊酯和环己酯等(甲基)丙烯酸环烷基酯。这些单体可以单独使用或以其组合使用。
丙烯酸系树脂可以根据需要包含可与(甲基)丙烯酸酯共聚的其它可共聚单体作为单体组分。其它可共聚单体的实例包括:如丙烯酸、甲基丙烯酸、衣康酸、富马酸和马来酸酐等含羧基或酸酐基团的单体;如(甲基)丙烯酸2-羟乙酯等含羟基单体;如(甲基)丙烯酸吗啉酯(morpholyl(meth)acrylate)等含氨基单体;和如(甲基)丙烯酰胺等含酰胺基的单体。相对于100重量份的基础聚合物,源自可共聚单体的构成单元的含量优选20重量份以下,更优选15重量份以下,还更优选2.5重量份~10重量份。
丙烯酸系树脂可以包含可与丙烯酸酯共聚的含羟基单体作为单体组分。含羟基单体的实例包括(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸6-羟己酯、(甲基)丙烯酸8-羟辛酯、(甲基)丙烯酸10-羟癸酯、(甲基)丙烯酸12-羟基月桂酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯。含羟基单体可以单独使用或以其组合使用。
丙烯酸系树脂可以通过任意适当的聚合方法使单体组分聚合而获得。聚合方法的实例包括溶液聚合、乳液聚合、本体聚合、和悬浮聚合。
压敏粘合剂组合物可以进一步包含在其分子中具有固化性官能团的异氰酸酯系化合物。异氰酸酯系化合物的实例包括甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧基乙基异氰酸酯、2-丙烯酰氧基乙基异氰酸酯和间异丙烯基-α,α-二甲基苄基异氰酸酯。
任意适当的化合物可以用作固化性单体组分和低聚物组分。其实例包括异氰酸酯系化合物、聚氨酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯和1,4-丁二醇二(甲基)丙烯酸酯。
基础聚合物的重均分子量优选200,000~3,000,000,更优选250,000~1,500,000。重均分子量可以通过GPC(溶剂:THF)来测量。
基础聚合物的玻璃化转变温度优选-70℃~-20℃,更优选-60℃~-40℃。
压敏粘合剂组合物可以进一步包含任意适当的添加剂。添加剂的实例包括聚合引发剂、交联剂、阻聚剂、固化助剂、增塑剂、增粘剂、防老剂、填料、着色剂、抗静电剂、和表面活性剂。添加剂可以单独使用或以其组合使用。当使用两种以上的添加剂时,添加剂可以逐一添加,或两种以上的添加剂可以同时添加。添加剂的配混量可以设定为任意适当的量。
任意适当的交联剂可以用作交联剂。其实例包括异氰酸酯系交联剂、环氧系交联剂、三聚氰胺系交联剂、过氧化物系交联剂、脲系交联剂、金属醇盐系交联剂、金属螯合物系交联剂、金属盐系交联剂、碳二亚胺系交联剂、噁唑啉系交联剂、氮丙啶系交联剂和胺系交联剂。交联剂可以单独使用或以其组合使用。交联剂的用量可以根据使用背面研磨带的应用而设定为任意适当的值。相对于100重量份的基础聚合物,交联剂的用量优选20重量份以下,更优选0.1重量份~6重量份。
任意适当的增塑剂可以用作增塑剂。其实例包括羧酸酯系增塑剂,如邻苯二甲酸酯系增塑剂、偏苯三酸酯系增塑剂、均苯四酸酯系增塑剂或己二酸酯系增塑剂,磷酸系增塑剂,环氧系增塑剂和聚酯系增塑剂(例如低分子量聚酯)。相对于100重量份的基础聚合物,增塑剂的用量优选30重量份以下,更优选0.1重量份~25重量份,还更优选0.1重量份~15重量份。
C.基材
基材20的弯曲刚性为0.2N·mm2以上,并且在400nm波长下的透光率为10%以上。构成基材20的树脂的熔点为200℃以上。当背面研磨带包括此类基材时,其耐热性得到改善,由此即使在高真空和高温处理的情况下,也可以适当地使用该带。
基材的弯曲刚性为0.2N·mm2以上,优选0.21N·mm2以上。更优选0.23N·mm2以上。此外,基材的弯曲刚性优选75N·mm2以下,更优选45N·mm2以下。当弯曲刚性落入所述范围内时,即使在将背面研磨带置于高真空和高温的环境下的情况下,可以抑制被粘物(半导体晶片)和压敏粘合剂层之间发生脱层。本文中使用的术语“弯曲刚性”是指从以下等式计算的值:
I=E×w×h3/12
(其中I表示试验片的弯曲刚性(N·mm2),E表示试验片的拉伸弹性模量(MPa),“w”表示试验片的宽度(mm),并且“h”表示试验片的厚度(mm))。
基材在400nm波长下的透光率为10%以上,优选30%以上,更优选50%以上。在400nm波长下的透光率落入所述范围内的情况下,当可用活性能量射线(优选紫外光)固化的压敏粘合剂用作形成压敏粘合剂层的压敏粘合剂组合物时,压敏粘合剂层可以更令人满意地固化,由此背面研磨带可以更容易地剥离。在400nm波长下的透光率仅仅需要为10%以上,并且没有上限。基材在400nm波长下的透光率可以用紫外-可见分光光度计(例如,来自Shimadzu Corporation的在商品名“SolidSpec-3700”下可得的产品)来测量。
基材的拉伸弹性模量优选1,500MPa以上,更优选1,800MPa以上,还更优选2,000MPa以上。此外,基材的拉伸弹性模量优选50,000MPa以下,更优选30,000MPa以下。当拉伸弹性模量落入所述范围内时,可以抑制在高真空和高温环境下被粘物(半导体晶片)和压敏粘合剂层之间发生脱层。本文中使用的术语“拉伸弹性模量”是指依照JIS K 7161测量的值。
基材包括熔点为200℃以上的树脂。构成基材的树脂的熔点优选220℃以上,更优选250℃以上。构成基材的树脂的熔点没有上限,并且允许树脂不熔融。当构成基材的树脂的熔点落入所述范围内时,可以改善背面研磨带的耐热性。基材的熔点可以通过差示扫描量热法(DSC)来测量。
任意适当的熔点为200℃以上的树脂可以用作构成基材的树脂。其实例包括聚对苯二甲酸乙二醇酯树脂、聚酰亚胺系树脂、聚苯并噁唑树脂、聚萘二甲酸乙二醇酯树脂、聚醚醚酮树脂、聚苯硫醚树脂、聚醚-酰亚胺树脂、聚酰胺-酰亚胺树脂、聚四氟乙烯氟树脂、聚偏二氯乙烯树脂、聚对苯二甲酸丁二醇酯树脂、和聚氯三氟乙烯树脂。其中,优选使用聚对苯二甲酸乙二醇酯树脂、聚酰亚胺系树脂、聚萘二甲酸乙二醇酯树脂、聚醚醚酮树脂、聚苯硫醚树脂、聚醚-酰亚胺树脂、聚酰胺-酰亚胺树脂。当使用任意这种树脂时,即使在背面研磨带在高温(例如,200℃以上)下进行耐热步骤的情况下,也可以抑制基材的变色和/或变形。
基材可以通过任意适当的方法来制造。例如,基材可以通过如压延成膜、流延成膜、吹胀挤出或T-模挤出的方法来制造。此外,基材可以根据需要通过实施拉伸处理来制造。
商用树脂膜可以用作基材。其实例包括:来自DuPont Teijin Films的在商品名“TEONEX(商标)Q51”下可得的产品和在商品名“TEONEX(商标)Q83”下可得的产品;来自Kurabo Industries Ltd.的在商品名“TORCENA”下可得的产品和在商品名“EXPEEK”下可得的产品;和来自I.S.T Corporation的在商品名“TORMED Type X”下可得的产品和在商品名“TORMED Type S”下可得的产品。
D.背面研磨带的制造方法
根据本发明的至少一个实施方案的背面研磨带可以通过将上述压敏粘合剂组合物涂布在上述基材上来制造。可以分别采用如棒涂机涂布、气刀涂布、凹版涂布、凹版反向涂布、反向辊涂、唇涂(lip coating)、模涂、浸涂、胶版印刷、柔版印刷和丝网印刷等各种方法作为压敏粘合剂的涂布方法。此外,例如,可以采用包括在隔离膜上单独地形成压敏粘合剂层、然后将所得产物贴合至基材上的方法。
实施例
本发明通过实施例的方式来具体说明,但本发明并不限于这些实施例。此外,实施例中的“份”和“%”为重量基准,除非另有说明。
<制造例1>压敏粘合剂组合物的制备
将100重量份丙烯酸丁酯、8重量份丙烯酸2-羟乙酯、0.3重量份聚合引发剂(2,2′-偶氮二异丁腈(AIBN))、和溶剂(甲乙酮(MEK))混合以制备单体组合物。
将单体组合物装入通过安装具有可分离盖的1升圆底可分离烧瓶、分液漏斗、温度计、氮气导入管、李比希冷凝器、真空密封器、搅拌棒、和搅拌叶片而获得的聚合用实验装置中,并且在搅拌组合物的同时,将装置内部用氮气在常温下吹扫6小时。之后,在氮气流中搅拌该组合物的同时,将该组合物在65℃下保持6小时来聚合。因此,获得树脂溶液。
将所得树脂溶液冷却至室温。之后,将4重量份甲基丙烯酸2-异氰酸根合乙酯(由Showa Denko K.K.制造,商品名:KARENZ MOI)作为具有聚合性碳-碳双键的化合物添加至树脂溶液中。进一步,将0.11重量份二月桂酸二丁基锡(IV)(由Wako Pure ChemicalIndustries,Ltd.制造)添加至混合物中,并且将全体在空气气氛下在50℃下搅拌24小时以提供聚合物溶液。
将100重量份所得聚合物溶液与1重量份交联剂(由Tosoh Corporation制造,商品名:CORONATE L)、1重量份引发剂(由BASF制造,商品名:IRGACURE 369)、0.1重量份阻聚剂(由BASF制造,商品名:IRGANOX 1010)、0.5重量份固化助剂1(由Adeka Corporation制造,商品名:EDP-300)、和2.5重量份固化助剂2(由Adeka Corporation制造,商品名:EDP-1100)混合。因此,获得压敏粘合剂组合物。
[实施例1]
通过将聚萘二甲酸乙二醇酯膜1(由DuPont Teijin Films制造,商品名:TEONEX(商标)Q51,厚度:50μm)的一面进行电晕处理而获得的产物用作基材。
将制造例1中制备的压敏粘合剂组合物涂布在隔离膜(通过将有机硅系脱模剂涂布在聚酯系膜(由Mitsubishi Chemical Corporation制造,商品名:MRF38,厚度:38μm)的单面上而获得)的剥离处理面上,在120℃下加热2分钟以形成压敏粘合剂层(厚度:50μm)。
将基材的电晕处理面和在隔离膜上形成的压敏粘合剂层彼此贴合,并且将所得产物在50℃下熟化2天以提供背面研磨带。
[实施例2]
除了使用聚酯系膜(由Kurabo Industries Ltd.制造,商品名:TORCENA,厚度:50μm)来代替聚萘二甲酸乙二醇酯膜1以外,以与实施例1相同的方式获得背面研磨带。
[实施例3]
除了使用聚异氰酸酯系膜1(由I.S.T Corporation制造,商品名:TORMED Type X,厚度:50μm)来代替聚萘二甲酸乙二醇酯膜1以外,以与实施例1相同的方式获得背面研磨带。
(比较例1)
除了使用聚萘二甲酸乙二醇酯膜2(由DuPont Teijin Films制造,商品名:TEONEX(商标)Q83,厚度:25μm)来代替聚萘二甲酸乙二醇酯膜1以外,以与实施例1相同的方式获得背面研磨带。
(比较例2)
除了使用聚醚醚酮膜(由Kurabo Industries Ltd.制造,商品名:EXPEEK,厚度:25μm)来代替聚萘二甲酸乙二醇酯膜1以外,以与实施例1相同的方式获得背面研磨带。
(比较例3)
除了使用聚异氰酸酯系膜2(由I.S.T Corporation制造,商品名:TORMED Type S,厚度:25μm)来代替聚萘二甲酸乙二醇酯膜1以外,以与实施例1相同的方式获得背面研磨带。
(比较例4)
除了使用聚异氰酸酯系膜3(由Du Pont-Toray Co.,Ltd.制造,商品名:KAPTON200V,厚度:50μm)来代替聚萘二甲酸乙二醇酯膜1以外,以与实施例1相同的方式获得背面研磨带。
[评价]
对实施例和比较例中使用的基材,或其中获得的背面研磨带进行以下评价(1)~(5)。结果在表1中示出。
(1)在400nm波长下的透光率
用作基材的各膜在400nm波长下的透光率用紫外-可见分光光度计(由ShimadzuCorporation制造,商品名:SolidSpec-3700)来测量。
(2)熔点
用作基材的膜的熔点用差示扫描量热计(由TAInstruments Inc.制造,商品名:Q2000)来测量。即使在将此类膜加热到400℃时也没有检测到熔融峰的膜被认为是不可溶解。
(3)弯曲刚性
将用作基材的膜各自切割成10mm宽×100mm长的尺寸,并且用作试验片。依照JISK 7161来测量各试验片的拉伸弹性模量。试验片的弯曲刚性通过使用以下等式由试验片的尺寸和其拉伸弹性模量的结果来计算:
I=E×w×h3/12
(其中I表示试验片的弯曲刚性(N·mm2),E表示试验片的拉伸弹性模量(MPa),“w”表示试验片的宽度(mm),和“h”表示试验片的厚度(mm))。
(4)UV固化性
将所得的背面研磨带各自切割成20mm宽,并且贴附至硅镜面晶片,随后用来自高压汞灯(70mW/cm2)的光照射10秒。接下来,该带的压敏粘合强度通过依照JIS Z 0237(2000)的方法(贴合条件:2千克辊的1次往复运动,剥离速度:300mm/分钟,剥离角度:180°)来测量。其中压敏粘合强度小于1N/20mm的情况用符号“○”表示,并且其中压敏粘合强度为1N/20mm以上的情况由符号“×”表示。
(5)耐热性
将所得的背面研磨带各自与硅镜面晶片粘合。将所得产物装入真空炉(由YamatoScientific Co.,Ltd.制造,商品名:DP-31)中,并且在加温至250℃和真空度为0.1托的状态下放置10分钟。之后,将产物从真空炉中移出,并且目视观察其压敏粘合剂层和硅镜面晶片之间是否存在脱层。未发生脱层的产物用符号“○”表示,而发生脱层的产物由符号“×”表示。
表1
实施例1~3的背面研磨带各自同时实现耐热性和优异的UV固化性。因此,即使在高真空和高温工艺中,也能够适宜地使用各带。
根据本发明的至少一个实施方案的背面研磨带可以适宜用于半导体晶片的加工。
Claims (5)
1.一种背面研磨带,其包括:
基材;和
在所述基材的一面上形成的压敏粘合剂层,
其中所述基材的弯曲刚性为0.2N·mm2以上,并且在400nm波长下的透光率为10%以上,并且
其中构成所述基材的树脂的熔点为200℃以上。
2.根据权利要求1所述的背面研磨带,其中所述基材的拉伸弹性模量为1,500MPa以上。
3.根据权利要求1或2所述的背面研磨带,其中所述基材的厚度为30μm~200μm。
4.根据权利要求1至3中任一项所述的背面研磨带,其中构成所述基材的树脂包括选自由聚对苯二甲酸乙二醇酯树脂、聚酰亚胺系树脂、聚醚醚酮树脂、聚酰胺-酰亚胺树脂、聚萘二甲酸乙二醇酯树脂、聚苯硫醚树脂和聚醚酰亚胺树脂组成的组中的至少一种。
5.根据权利要求1至4中任一项所述的背面研磨带,其中所述压敏粘合剂层由活性能量射线固化型压敏粘合剂组合物形成。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1247382A (zh) * | 1998-08-18 | 2000-03-15 | 琳得科株式会社 | 用于晶片背磨的表面保护片及其使用方法 |
JP2004051736A (ja) * | 2002-07-18 | 2004-02-19 | Nitto Denko Corp | 紫外線硬化型粘着シート |
WO2014136836A1 (ja) * | 2013-03-07 | 2014-09-12 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
JP2015137299A (ja) * | 2014-01-21 | 2015-07-30 | 住友ベークライト株式会社 | 樹脂組成物、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、および電子装置 |
CN105153954A (zh) * | 2010-07-29 | 2015-12-16 | 日东电工株式会社 | 倒装芯片型半导体背面用膜及其用途 |
JP2017005072A (ja) * | 2015-06-09 | 2017-01-05 | 日東電工株式会社 | 半導体ウエハ保護用粘着シート |
TW201715593A (zh) * | 2015-10-30 | 2017-05-01 | Furukawa Electric Co Ltd | 半導體晶圓表面保護用黏著帶及半導體晶圓的加工方法 |
CN107112229A (zh) * | 2015-03-06 | 2017-08-29 | 古河电气工业株式会社 | 半导体晶片表面保护用胶带 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4568465B2 (ja) | 2001-12-12 | 2010-10-27 | 電気化学工業株式会社 | 半導体ウエハ保護用シート |
JP4726405B2 (ja) | 2002-07-26 | 2011-07-20 | 日東電工株式会社 | 加工用粘着シートとその製造方法 |
JP2004253625A (ja) | 2003-02-20 | 2004-09-09 | Mitsui Chemicals Inc | 半導体ウェハ表面保護用粘着フィルム及び該粘着フィルムを用いる半導体ウェハの保護方法 |
JP4261260B2 (ja) | 2003-06-26 | 2009-04-30 | 日東電工株式会社 | 半導体ウエハの研削方法および半導体ウエハ研削用粘着シート |
JP4574234B2 (ja) | 2004-06-02 | 2010-11-04 | リンテック株式会社 | 半導体加工用粘着シートおよび半導体チップの製造方法 |
JP2009277860A (ja) | 2008-05-14 | 2009-11-26 | Toyobo Co Ltd | バックグラインドテープ |
JP2010241967A (ja) * | 2009-04-07 | 2010-10-28 | Nitto Denko Corp | 再剥離性粘着シート及びこれを用いた被着体の加工方法 |
JP2011151163A (ja) | 2010-01-21 | 2011-08-04 | Furukawa Electric Co Ltd:The | 半導体ウエハ表面保護テープ、樹脂製基材フィルム |
JP2012119641A (ja) | 2010-12-03 | 2012-06-21 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法 |
JP2016086013A (ja) | 2014-10-23 | 2016-05-19 | 矢崎総業株式会社 | フィルム状プリント回路板及びその製造方法 |
TWI692519B (zh) * | 2015-06-11 | 2020-05-01 | 日商三井化學東賽璐股份有限公司 | 電子零件保護膜、電子零件保護構件、電子零件的製造方法及封裝的製造方法 |
JP6731782B2 (ja) | 2016-05-16 | 2020-07-29 | 三井化学東セロ株式会社 | 成形品の外観不良を抑制するプロセス用離型フィルム、その用途、及びそれを用いた樹脂封止半導体の製造方法 |
-
2019
- 2019-03-22 JP JP2019054573A patent/JP7311284B2/ja active Active
-
2020
- 2020-03-02 TW TW109106735A patent/TWI837314B/zh active
- 2020-03-16 CN CN202010182172.0A patent/CN111716242B/zh active Active
- 2020-03-18 EP EP20163866.5A patent/EP3712221A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1247382A (zh) * | 1998-08-18 | 2000-03-15 | 琳得科株式会社 | 用于晶片背磨的表面保护片及其使用方法 |
JP2004051736A (ja) * | 2002-07-18 | 2004-02-19 | Nitto Denko Corp | 紫外線硬化型粘着シート |
CN105153954A (zh) * | 2010-07-29 | 2015-12-16 | 日东电工株式会社 | 倒装芯片型半导体背面用膜及其用途 |
WO2014136836A1 (ja) * | 2013-03-07 | 2014-09-12 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
JP2015137299A (ja) * | 2014-01-21 | 2015-07-30 | 住友ベークライト株式会社 | 樹脂組成物、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、および電子装置 |
CN107112229A (zh) * | 2015-03-06 | 2017-08-29 | 古河电气工业株式会社 | 半导体晶片表面保护用胶带 |
JP2017005072A (ja) * | 2015-06-09 | 2017-01-05 | 日東電工株式会社 | 半導体ウエハ保護用粘着シート |
TW201715593A (zh) * | 2015-10-30 | 2017-05-01 | Furukawa Electric Co Ltd | 半導體晶圓表面保護用黏著帶及半導體晶圓的加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115703950A (zh) * | 2021-08-12 | 2023-02-17 | 利诺士尖端材料有限公司 | 晶圆背面研磨用粘结膜 |
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