CN111430449A - 一种mosfet器件及其制备工艺 - Google Patents
一种mosfet器件及其制备工艺 Download PDFInfo
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- CN111430449A CN111430449A CN202010252825.8A CN202010252825A CN111430449A CN 111430449 A CN111430449 A CN 111430449A CN 202010252825 A CN202010252825 A CN 202010252825A CN 111430449 A CN111430449 A CN 111430449A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
器件 | 实施例1 | 对比例1 |
圆胞尺寸(μm) | 5 | 5 |
沟道长度(μm) | 0.35 | 0.35 |
阱区深度(μm) | 6 | 0.7 |
漂移层掺杂浓度(cm<sup>-3</sup>) | 2×10<sup>16</sup> | 8×10<sup>15</sup> |
漂移层(μm) | 3 | 9 |
电流扩展层掺杂浓度(cm<sup>-3</sup>) | 2×10<sup>16</sup> | 2×10<sup>16</sup> |
电流扩展层(μm) | 7 | 1 |
JFET区掺杂浓度(cm<sup>-3</sup>) | 2×10<sup>17</sup> | 1×10<sup>17</sup> |
Claims (10)
Priority Applications (1)
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CN202010252825.8A CN111430449B (zh) | 2020-04-01 | 2020-04-01 | 一种mosfet器件及其制备工艺 |
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CN202010252825.8A CN111430449B (zh) | 2020-04-01 | 2020-04-01 | 一种mosfet器件及其制备工艺 |
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Publication Number | Publication Date |
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CN111430449A true CN111430449A (zh) | 2020-07-17 |
CN111430449B CN111430449B (zh) | 2023-06-02 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024125297A1 (zh) * | 2022-12-13 | 2024-06-20 | 厦门芯达茂微电子有限公司 | 新型SiC MOSFET器件 |
Citations (15)
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JP2001144292A (ja) * | 1999-11-17 | 2001-05-25 | Denso Corp | 炭化珪素半導体装置 |
US6501128B1 (en) * | 1999-07-05 | 2002-12-31 | Fuji Electric Co., Ltd. | Insulated gate transistor and the method of manufacturing the same |
JP2003068758A (ja) * | 2001-08-23 | 2003-03-07 | Hitachi Ltd | 半導体装置 |
US20090179273A1 (en) * | 2008-01-15 | 2009-07-16 | Yokogawa Electric Corporation | Semiconductor device |
JP2012164707A (ja) * | 2011-02-03 | 2012-08-30 | Panasonic Corp | 半導体装置およびその製造方法 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
US20130032896A1 (en) * | 2011-08-03 | 2013-02-07 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2014083771A1 (ja) * | 2012-11-28 | 2014-06-05 | パナソニック株式会社 | 半導体素子及びその製造方法 |
CN103890953A (zh) * | 2012-03-23 | 2014-06-25 | 松下电器产业株式会社 | 半导体元件 |
US9093522B1 (en) * | 2014-02-04 | 2015-07-28 | Maxpower Semiconductor, Inc. | Vertical power MOSFET with planar channel and vertical field plate |
JP2016139761A (ja) * | 2015-01-29 | 2016-08-04 | 富士電機株式会社 | 半導体装置 |
US20170025530A1 (en) * | 2015-02-27 | 2017-01-26 | Purdue Research Foundation | METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SUBSTRATES AND DEVICES MADE THEREBY |
CN107845683A (zh) * | 2016-09-21 | 2018-03-27 | 株式会社东芝 | 半导体装置 |
US20180323299A1 (en) * | 2015-11-12 | 2018-11-08 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and manufacturing method for the same |
CN110828572A (zh) * | 2018-08-08 | 2020-02-21 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
-
2020
- 2020-04-01 CN CN202010252825.8A patent/CN111430449B/zh active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501128B1 (en) * | 1999-07-05 | 2002-12-31 | Fuji Electric Co., Ltd. | Insulated gate transistor and the method of manufacturing the same |
JP2001144292A (ja) * | 1999-11-17 | 2001-05-25 | Denso Corp | 炭化珪素半導体装置 |
JP2003068758A (ja) * | 2001-08-23 | 2003-03-07 | Hitachi Ltd | 半導体装置 |
US20090179273A1 (en) * | 2008-01-15 | 2009-07-16 | Yokogawa Electric Corporation | Semiconductor device |
JP2012164707A (ja) * | 2011-02-03 | 2012-08-30 | Panasonic Corp | 半導体装置およびその製造方法 |
US20130032896A1 (en) * | 2011-08-03 | 2013-02-07 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN103890953A (zh) * | 2012-03-23 | 2014-06-25 | 松下电器产业株式会社 | 半导体元件 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
WO2014083771A1 (ja) * | 2012-11-28 | 2014-06-05 | パナソニック株式会社 | 半導体素子及びその製造方法 |
US9093522B1 (en) * | 2014-02-04 | 2015-07-28 | Maxpower Semiconductor, Inc. | Vertical power MOSFET with planar channel and vertical field plate |
JP2016139761A (ja) * | 2015-01-29 | 2016-08-04 | 富士電機株式会社 | 半導体装置 |
US20170025530A1 (en) * | 2015-02-27 | 2017-01-26 | Purdue Research Foundation | METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SUBSTRATES AND DEVICES MADE THEREBY |
US20180323299A1 (en) * | 2015-11-12 | 2018-11-08 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and manufacturing method for the same |
CN107845683A (zh) * | 2016-09-21 | 2018-03-27 | 株式会社东芝 | 半导体装置 |
CN110828572A (zh) * | 2018-08-08 | 2020-02-21 | 丰田自动车株式会社 | 半导体装置及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2024125297A1 (zh) * | 2022-12-13 | 2024-06-20 | 厦门芯达茂微电子有限公司 | 新型SiC MOSFET器件 |
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