CN111247115A - 陶瓷、探针引导构件、探针卡及封装检查用插座 - Google Patents

陶瓷、探针引导构件、探针卡及封装检查用插座 Download PDF

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CN111247115A
CN111247115A CN201880068292.9A CN201880068292A CN111247115A CN 111247115 A CN111247115 A CN 111247115A CN 201880068292 A CN201880068292 A CN 201880068292A CN 111247115 A CN111247115 A CN 111247115A
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ceramic
probe
guide member
inspection
volume resistivity
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CN201880068292.9A
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山岸航
森一政
卫藤俊一
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Flt Materials Technology Co Ltd
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Flt Materials Technology Co Ltd
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Priority to CN202211369294.6A priority Critical patent/CN115626828A/zh
Publication of CN111247115A publication Critical patent/CN111247115A/zh
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    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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Abstract

以质量％计，由BN：20.0～55.0％、SiC：5.0～40.0％、ZrO2和/或Si3N4：3.0～60.0％构成的陶瓷。该陶瓷在‑50～500℃下的热膨胀系数为1.0×10‑6～5.0×10‑6/℃，低带电性(以体积电阻率计为106～1014Ω·cm)和易切削性优异，因此适合使用在例如用于对探针卡的探针进行引导的探针引导构件、封装检查用插座等。

Description

陶瓷、探针引导构件、探针卡及封装检查用插座
技术领域
本发明涉及一种陶瓷、探针引导构件、探针卡及封装检查用插座。
背景技术
在制造电子部件等精密机器的工序中，为了抑制由静电放电导致的产品损伤、发生不良等，并且，为了防止环境中漂浮的微粒吸附静电，使用采取了静电对策的低带电性材料。
例如，在IC芯片的检查工序中，使用探针卡。图1示出了探针卡的结构示例的截面图，图2示出了探针引导器的结构示例的俯视图。如图1所示，探针卡10是一种检查用具，具备针状的探针11、以及具有用于穿插各探针11的多个贯通孔12a的探针引导器(探针引导构件)12。并且，IC芯片14的检查是通过使多个探针11与硅晶圆13上形成的IC芯片14接触来进行的。此时，探针引导器12使用采取了静电对策的低带电性材料。
作为常规的低带电性材料，广泛使用以体积电阻率计为106～1012Ω·cm程度的材料，例如添加了导电性填料的树脂(专利文献1、2等)、分散烧结导电性陶瓷而得到的陶瓷烧结体(专利文献3～5等)等。
现有技术文献
专利文献
专利文献1:日本特开2005-226031号公报
专利文献2:国际公开第2002/082592号
专利文献3:日本特开2013-136503号公报
专利文献4:日本特开2008-094688号公报
专利文献5:日本特开2006-199586号公报
发明内容
发明要解决的问题
随着近年来设备的微细化、高性能化，对于制造它们的装置上所使用的静电对策材料，要求不仅提高低带电性，还要提高易切削性、耐热性、机械特性、热膨胀率等各种性能。
例如，IC芯片检查工序的检查效率取决于可与IC芯片同时接触的探针的个数。因此，近年来，通过微机电***(MEMS，Micro Electro Mechanical Systems)，高密度地竖立设置数万个微小探针的探针卡不断实用化。如上述图2所示，在探针引导器12上，需要在与探针卡10的各探针11对应的位置设置贯通孔12a。根据其检查装置的规格不同，探针卡10的探针11的设置位置、形状等也各式各样，相应地，贯通孔12a的设置位置、形状等也各式各样。例如，探针11为针状的情况下，采用圆形的孔作为贯通孔12a。孔的内径、孔的间距也取决于探针11的种类和配置，例如，有时将直径50μm的贯通孔以60μm间距(贯通孔间的壁厚为10μm程度)设置。由于需要设置数万个这种小贯通孔，因此要求易切削性。
对于探针引导器，由于检查是在各种温度环境下进行的，因此要求耐热性优异。对于探针引导器，还要求与硅晶圆同等程度的热膨胀率。对于探针引导器，为了耐受检查时的接触等，还要求机械特性优异。以上主要对探针引导器进行了说明，而在要求优异的低带电性和易切削性的用途方面，有封装检查用插座等检查用插座。
在此，如专利文献1和2所述的添加了导电性填料的树脂由于刚性、耐热性(使用温度)低，作为检查用具使用时，探针数(负载能力)和检查温度域受限。另外，这种树脂由于低导热率且高热膨胀率，加工中坯料受热膨胀，因此有时在加工后得不到所期望的尺寸精度。
另一方面，以Al2O3为主相的陶瓷(专利文献3)、以Zro2为主相的陶瓷(专利文献4和5)虽然低带电性优异，但硬度过高，因此微细加工、尤其是基于机械加工的切削难以进行。因此，在例如使用这些材料制作探针引导器的情况下，存在制造时间极其长的问题。
本发明的目的在于提供一种低带电性(以体积电阻率计为106～1014Ω·cm)和易切削性优异的陶瓷、使用该陶瓷的探针引导构件、探针卡及检查用插座。
用于解决问题的方案
本发明人等为了实现上述的目的，反复深入研究，结果得到下述的认知。
(a)本发明人等首先对用于改善陶瓷烧结体的易切削性的主相进行了研究，结果发现以Al2O3为主相的陶瓷、以ZrO2为主相的陶瓷的硬度过高，因此难以进行微细加工，而以BN为主相的陶瓷烧结体具有优异的易切削性。因此，陶瓷的主相宜为BN。
(b)但是，BN的体积电阻率过高，达到1015Ω·cm级别，因此在检查工序中持续使用时会蓄积电荷。蓄积的电荷无法缓慢放出，因此发生静电放电。其结果，电流瞬间流过检查对象物，有时存在检查对象物破损的问题。因此，为了将陶瓷烧结体的体积电阻率控制在106～1014Ω·cm的范围而使其具有低带电性，有效的是使103Ω·cm以下程度的颗粒分散在陶瓷烧结体的母材中。作为该分散颗粒，尤其有SiC、WC、C、TiN、TiO2等。但是，与SiC相比，WC、C、TiN、TiO2的单体的体积电阻率低。因此，宜在以BN为主相的陶瓷中分散适量的SiC。
(c)如果仅仅使适量的SiC分散在以BN为主相的陶瓷中，会存在机械特性差的情况，因此有效的是使ZrO2和/或Si3N4与SiC一起分散于其中。
(d)为了兼顾易切削性和机械特性，优选致密的陶瓷烧结体。因此，宜采用在加压气氛下进行焙烧的热压焙烧法来制造。
本发明基于上述认知而完成，主要内容为下述的技术方案。
(1)一种陶瓷，其以质量％计由
BN：20.0～55.0％、
SiC：5.0～40.0％、
ZrO2和/或Si3N4：3.0～60.0％构成。
(2)根据上述(1)的陶瓷，其在-50～500℃下的热膨胀系数为1.0×10-6～5.0×10-6/℃。
(3)根据上述(1)或(2)的陶瓷，其体积电阻率为106～1014Ω·cm。
(4)根据上述(1)～(3)中任一项的陶瓷，其吸水率为0.5％以下。
(5)一种探针引导构件，其是用于对探针卡的探针进行引导的探针引导构件，所述探针卡引导构件具备：
使用上述(1)～(4)中任一项的陶瓷的板状的主体部；以及，
所述主体部中用于穿插所述探针的多个贯通孔和/或狭缝。
(6)一种探针卡，其具备：
多个探针；以及，
上述(5)的探针引导构件。
(7)一种封装检查用插座，其使用上述(1)～(4)中任一项的陶瓷。
发明的效果
根据本发明，能够得到低带电性(以体积电阻率计为106～1014Ω·cm)和易切削性优异的陶瓷，因此作为探针引导构件、探针卡及检查用插座尤其有用。
附图说明
图1为探针卡的结构示例的截面图。
图2为探针引导器的结构示例的俯视图。
图3为实施例1的微细化试验后的照片。
图4为比较例6的微细化试验后的照片。
具体实施方式
1.陶瓷
本发明的陶瓷以质量％计由BN：20.0～55.0％、SiC：5.0～40.0％、ZrO2和/或Si3N4：3.0～60.0％构成。以下，涉及含量的“％”表示“质量％”。
BN：20.0～55.0％
对于本发明的陶瓷，要求是能用超硬工具加工的程度的易切削性材料，因此为了使陶瓷具有优异的易切削性，作为必要成分，含有20.0％以上的BN。但是，BN的含量超过55.0％时，材料强度下降，在贯通孔加工时会产生贯通孔间的壁崩塌的问题。因此，BN的含量为20.0～55.0％。下限优选为25.0％，更优选为30.0％。上限优选为50.0％，更优选为45.0％。
需要说明的是，BN有六方晶系BN(h-BN)和立方晶系BN(c-BN)，由于c-BN为高硬度，宜使用h-BN。BN的粒径虽无特别限制，但如果过大，有时会发生材料强度下降，因此以平均粒径计优选为小于5μm。
SiC：5.0～40.0％
SiC是为了将陶瓷的体积电阻率控制在106～1014Ω·cm的范围所需要的成分。因此，SiC的含量为5.0％以上。不过，SiC的含量超过40.0％时，体积电阻率低于106Ω·cm，不仅不是作为低带电性材料优选的体积电阻率，而且材料硬度上升过多，产生损害易切削性的问题。因此，SiC的含量为5.0～40.0％。下限优选为10.0％，更优选为15.0％。上限优选为35.0％，更优选为30.0％。
需要说明的是，SiC的粒径虽无特别限制，但如果过大，体积电阻率的偏差变大，因此以平均粒径计优选为小于2.0μm。另外，优选在以BN为主体的陶瓷中以分散状态存在。分散状态可通过用能量色散X射线光谱法(EDX，Energy dispersive X-ray spectrometry)进行Si的元素分析来确认。
ZrO2和/或Si3N4：3.0～60.0％
ZrO2和Si3N4均是为了提高陶瓷的机械特性所需要的成分。因此，ZrO2和/或Si3N4的含量为3.0％以上。不过，ZrO2和/或Si3N4的含量超过60.0％时，硬度上升过多，易切削性劣化，不能高精度地形成微细孔。因此，ZrO2和/或Si3N4的含量为3.0～60.0％。下限优选为5.0％，更优选为10.0％。上限优选为55.0％，更优选为50.0％。需要说明的是，含有ZrO2和Si3N4这两者的情况下，总含量为3.0～60.0％。
需要说明的是，ZrO2和/或Si3N4的粒径虽无特别限制，但如果过大，机械特性的偏差变大，因此以平均粒径计优选为小于2μm。另外，优选在以BN为主体的陶瓷中以分散状态存在。分散状态可通过基于EDX的元素分析来确认。
在本发明的陶瓷中，除上述的各成分之外，还含有为了得到致密的陶瓷所需的烧结助剂。作为烧结助剂，例如可列举出选自氧化铝(Alumina、Al2O3)、氧化镁(Magnesia，MgO)、氧化钇(Yttria，Y2O3)、以及镧系金属的氧化物和尖晶石等复合氧化物中的1种以上。其中优选的是氧化铝和氧化钇的混合物，或进一步含有氧化镁的混合物。
烧结助剂的含量虽无特别限制，但优选为1.0～15.0％。如果配混量过少，则烧结不充分，作为烧结体的陶瓷的强度下降。另一方面，如果配混量过多，则由强度低的玻璃、晶体等构成的晶界相增加，仍然导致陶瓷的强度下降。此外，由于晶界相的体积电阻率高，如果配混量过多，会导致陶瓷的体积电阻率增加，对低带电性造成不良影响。烧结助剂的含量优选为3.0％以上，更优选为5.0％以上。另外，烧结助剂的含量优选为12.0％以下，更优选为10.0％以下。
需要说明的是，各成分的含量(质量％)可通过ICP发射光谱分析法进行测量。
在-50～500℃下的热膨胀系数：1.0×10-6～5.0×10-6/℃
将本发明的陶瓷用于探针引导器的情况下，要求与搭载各IC芯片的硅晶圆的热膨胀系数同等程度。这是因为，检查时的温度变化时，IC芯片的位置会随着硅晶圆的热膨胀而变动。此时，如果探针引导器具有与硅晶圆同等程度的热膨胀系数，则可与硅晶圆的膨胀、收缩同步移动，因此能够保持高精度的检查。这一点在本发明的陶瓷用于检查用插座时也是同样。因此，在-50～500℃下的热膨胀系数以1.0×10-6～5.0×10-6/℃作为基准。
体积电阻率：106～1014Ω·cm
本发明的陶瓷以具有低带电性为特征，体积电阻率以106～1014Ω·cm作为基准。
吸水率：0.5％以下
本发明的陶瓷为了得到所需的机械特性需要致密。如果气孔残留多，则无法得到足够的机械特性，吸水率以0.5％以下作为基准。
弯曲强度：200MPa以上
本发明的陶瓷用于探针引导器时，为了在检查时耐受与探针等的接触、负载，要求具有足够的机械特性。这一点在本发明的陶瓷用于检查用插座时也是同样。因此，弯曲强度以200MPa以上作为基准。
易切削性
对于易切削性，是针对通过用超硬微钻头的切削加工将直径50μm和直径100μm的贯通孔以60μm间距设置1000个(8个×125列)时的加工精度，通过用影像量测机(例如日本三丰株式会社制Quick Vision)进行观察来评价。此时，加工精度为±3.0μm以下时，判断为易切削性良好。
2.陶瓷的制造方法
以下，对本发明的陶瓷的制造方法的例子进行说明。
将BN、SiC以及ZrO2和/或Si3N4的粉末与烧结助剂一起，用球磨机等公知的方法混合。即，在容器内将各粉末与溶剂、陶瓷制球或加入铁芯的树脂制球一起混合而制成浆料。此时，溶剂可以使用水或醇。进而，必要时也可以使用分散剂、粘结剂等添加物。
将得到的浆料用喷雾干燥装置或减压蒸发器等公知的方法进行造粒。即，用喷雾干燥装置进行喷雾干燥使其颗粒化，或用减压蒸发器进行干燥使其粉末化。
将得到的粉末在高温高压下，用例如热压或HIP(热等静压加压法)等公知的方法进行烧结，得到陶瓷烧结体。采用热压的情况下，可以在氮气气氛或加压氮气中焙烧。另外，焙烧温度宜在1400～1900℃的范围。如果温度过低，则烧结不充分，如果过高，则产生氧化物成分溶出等问题。
加压力在15～50MPa的范围是适当的。另外，虽然加压力持续时间取决于温度、尺寸，但通常为1～4小时程度。而采用HIP的情况下也是适当设定温度、加压力等焙烧条件即可。除此之外，也可以采用常压焙烧法、气氛加压焙烧法等公知的焙烧方法。
实施例
为了确认本发明的效果，将改变了配混比的BN(h-BN)、SiC以及ZrO2和/或Si3N4的粉末与烧结助剂(氧化铝和氧化钇的混合物，或进一步含有氧化镁的混合物)一起，与水、分散剂、树脂、陶瓷制球一起混合，将得到的浆料用喷雾干燥装置进行喷雾干燥制成颗粒状。将得到的颗粒填充于石墨制的模具(模子)中，在氮气气氛中一边施加30MPa的压力一边以1700℃进行热压焙烧2小时，得到纵150×横150×厚度30mm的试验材料。
为了参考，准备了市售的添加了碳纤维的树脂(比较例8)、市售的以Al2O3为主相的陶瓷(比较例9)、市售的以ZrO2为主相的陶瓷(比较例10)作为试验材料。
从得到的试验材料采集试验片进行各种试验。
＜体积电阻率＞
基于JIS C2141求出上述的试验材料的体积电阻率。
＜热膨胀率＞
基于JIS R1618求出上述试验材料在-50～500℃下的热膨胀系数。
＜吸水率＞
基于JIS C2141求出上述试验材料的吸水率。
＜弯曲强度＞
基于JIS R1601求出上述试验材料的三点弯曲强度。
＜易切削性＞
对于易切削性，是针对通过用超硬微钻头的切削加工将直径50μm和直径100μm的贯通孔以60μm间距设置1000个(8个×125列)时的加工精度(将加工性精度为±3.0μm以下的情况判断为良好)，通过目测观察进行评价。此时，加工精度为±3.0μm以下时判断为易切削性良好，记为“○”；将加工精度超过±3.0μm的情况记为“△”；将钻头折损等无法进行开孔加工的情况记为“×”，记入表1。
[表1]
表1
Figure BDA0002457685620000091
*表示在本发明所规定的范围之外。
#表示性能不满足本发明所期望的范围。
图3示出了实施例1的微细化试验后的照片，图4示出了比较例6的微细化试验后的照片。
如表1所示，比较例1～3是以BN为主相且含有ZrO2和/或Si3N4的例子，由于SiC少或不含，因此体积电阻率变得过高。比较例4由于BN过少，硬质的SiC过多，因此在微细加工试验中，易切削性劣化。比较例5、6含有C而不是SiC，比较例5的体积电阻率变得过高，比较例6的易切削性劣化。比较例7是以Si3N4为主相且含有TiO2的例子，不仅体积电阻率过高，而且易切削性也劣化。比较例8～10均是易切削性劣化。
与此相对，实施例1～16的体积电阻率和易切削性均良好。实施例16虽然满足所要求的性能，但吸水率高达0.8，弯曲强度变差了一些。另外，如图3和图4所示，比较例6在切削加工时贯通孔间的壁发生崩塌，而实施例1没有这样的崩塌，能够高精度地形成贯通孔。
产业上的可利用性
根据本发明，能够得到低带电性(以体积电阻率计为106～1014Ω·cm)和易切削性优异的陶瓷，因此作为探针引导构件、探针卡及检查用插座尤其有用。

Claims (7)

1.一种陶瓷，其以质量％计由
BN：20.0～55.0％、
SiC：5.0～40.0％、
ZrO2和/或Si3N4：3.0～60.0％构成。
2.根据权利要求1所述的陶瓷，其在-50～500℃下的热膨胀系数为1.0×10-6～5.0×10-6/℃。
3.根据权利要求1或2所述的陶瓷，其体积电阻率为106～1014Ω·cm。
4.根据权利要求1至3中任一项所述的陶瓷，其吸水率为0.5％以下。
5.一种探针引导构件，其是用于对探针卡的探针进行引导的探针引导构件，所述探针引导构件具备：
使用权利要求1至4中任一项所述的陶瓷的板状的主体部；以及，
所述主体部中用于穿插所述探针的多个贯通孔和/或狭缝。
6.一种探针卡，其具备：
多个探针；以及，
权利要求5所述的探针引导构件。
7.一种封装检查用插座，其使用权利要求1至4中任一项所述的陶瓷。
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