TWI713928B - 陶瓷、探針導引零件、探針卡及封裝體檢查用插座 - Google Patents

陶瓷、探針導引零件、探針卡及封裝體檢查用插座 Download PDF

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TWI713928B
TWI713928B TW107139761A TW107139761A TWI713928B TW I713928 B TWI713928 B TW I713928B TW 107139761 A TW107139761 A TW 107139761A TW 107139761 A TW107139761 A TW 107139761A TW I713928 B TWI713928 B TW I713928B
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probe
ceramic
zro
crystal
probe guide
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TW107139761A
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TW201922674A (zh
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山岸航
森一政
衛藤俊一
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日商飛羅得材料科技股份有限公司
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Abstract

一種陶瓷，以質量%計，含有Si3 N4 :20.0~60.0%、與ZrO2 :25.0~70.0%、與選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上：5.0~15.0%。該陶瓷具有：和矽為相同程度的熱膨脹係數、優異的機械強度，且可高精度地精細加工，且可抑制粉粒的產生。

Description

陶瓷、探針導引零件、探針卡及封裝體檢查用插座
本發明為關於陶瓷、探針導引零件、探針卡及封裝體檢查用插座。
例如，在IC晶片的檢查步驟中為使用探針卡。圖1所表示的剖面圖為示例探針卡之構成，圖2所表示的俯視圖為示例探針導件之構成。如圖1及圖2所示般，探針卡10係具備針狀探針11與探針導件(探針導引零件)12的檢查治具，所述的探針導件12具有用來使各探針11插通的複數個貫通孔12a。然後，IC晶片14的檢查係以複數個探針11接觸於形成在矽晶圓13上的IC晶片14來進行。
專利文獻1中示例著一種陶瓷，其係以氮化矽25~60質量%與氮化硼40~75質量%的混合物作為主原料而成。又，專利文獻2中揭示著有關於易削性(free cutting)陶瓷之發明，其特徵在於由主成分為氮化硼30~50質量%及氧化鋯50~70質量%所構成。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特開2005-226031號公報 [專利文獻2] 國際公開第2002/082592號
[發明所欲解決之課題]
隨著近年的元件(device)的微細化或高性能化，使用於該檢查裝置中的探針導件被要求著下述之特性：和矽晶圓13具有相同程度的熱膨脹率、具有可承受探針荷重的機械強度(彎曲強度)、可高精度地多數加工使微小探針貫通的孔洞。
例如，IC晶片的檢查步驟的檢查效率，係依存於可同時接觸於IC晶片的探針的根數。因此，近年已藉由MEMS(Micro Electro Mechanical Systems)逐漸將高密度設置有數萬根微小探針的探針卡予以實用化。如前揭的圖2所示般，探針導件12必須在對應於探針卡10的各探針11的位置設置貫通孔12a。探針卡10的探針11的設置位置或形狀等，依據該檢查裝置的規格而有各式各樣，因應於此，貫通孔12a的設置位置或形狀等亦為各式各樣。例如，若探針11為針(pin)形狀時，作為貫通孔12a係採用圓形孔洞，但因應於探針11的形狀，而必須形成各式各樣的形狀的貫通孔12a。
孔洞內徑或孔洞間距(pitch)亦會依據探針11的種類或配置而不同，例如，有將直徑50μm的貫通孔以60μm間距(貫通孔間之壁厚為10μm左右)進行設置之情形。必須設置如此般的小貫通孔數萬個。因此，要求著可容易精密加工的材料。特別是，當探針導件12的貫通孔12a與探針11接觸時，若產生粉粒(particles)的話，會有引起下述之情形：對於元件之損傷、或檢查不良、增加探針卡10的維修次數。因此，亦要求著探針導件12的貫通孔12a內表面的粗度為小，即，加工表面為平滑。
於此，隨著IC晶片的配線微細化，探針數的增加及接觸於探針的襯墊(pad)間距離(間距)變狹窄之同時，亦要求著探針的位置精度的更進一步的提升。為了對應此狹窄間距，正進行著探針的小型化，又亦開始使用各式各樣的形狀的探針。另一方面，使用於探針導件的材料中，以提升探針位置精度之目的下，亦會產生因應於厚度的減低、探針形狀的變化的微細孔洞的形成等的必要性。
但是，若減低探針導件用材料的厚度時，構件的強度會降低，無法承受探針荷重而會變形，其結果，使得探針的位置精度降低。又，視情況，探針導件用材料亦有破損之情形。為了對應於該等要求，對於探針導件係要求著具有極為優異的機械特性。
以上為主要對於探針導件進行說明，但在作為要求相同性能之用途方面，亦有封裝體檢查用插座等的檢查用插座。
於此，專利文獻1及2中記載的陶瓷，雖然具有和矽為相同程度的熱膨脹係數、且具有一定的機械強度與易削性，但完全未考量關於加工表面的平滑度。
本發明之目的為提供一種陶瓷，其具有：和矽為相同程度的熱膨脹係數、優異的機械強度，可高精度地精細加工，且加工表面為平滑，可抑制使用時的粉粒的產生，以及提供使用該陶瓷而得的探針導引零件、探針卡及檢查用插座。 [解決課題之手段]
本發明人為了達成上述目的，藉由對於高強度陶瓷的Si3 N4 複合高膨脹陶瓷的ZrO2 ，獲得具有和矽晶圓為相同程度的熱膨脹率、且高強度的陶瓷，以此作為基本並重複深入研究之結果，獲得下述見解。
(a)對於Si3 N4 複合ZrO2 而成的陶瓷材料，係極為堅硬的材料，因此難以利用機械加工來形成微細孔洞。於此，較佳為利用雷射加工來製作微細孔洞，以獲得探針導件板。
(b)但是，僅只單純進行雷射加工的話，難以使加工表面(例如，探針導件的貫通孔內表面)呈現平滑。於此，使含有指定量的氧化物。作為氧化物，係示例如MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 等。
本發明為依據上述之見解而完成之發明，並以下述之發明為要旨。
(1).一種陶瓷，以質量%計，含有 Si3 N4 ：20.0~60.0%、與 ZrO2 ：25.0~70.0%、與 選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上：5.0~15.0%。
(2).如上述(1)之陶瓷，其中，以質量%計，含有 選自MgO、Y2 O3 、CeO2 、CaO及HfO2 中之1種以上、與 選自TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上。
(3).如上述(1)或(2)之陶瓷，其中，ZrO2 的結晶相為正方晶、或正方晶及單斜晶、或立方晶、或立方晶及正方晶、或立方晶及單斜晶。
(4).如上述(1)~(3)中任一項之陶瓷，其中，ZrO2 為立方晶。
(5).如上述(1)~(4)中任一項之陶瓷，其中，在-50~500℃的熱膨脹係數為3.0×10-6 ~6.0×10-6 /℃，且三點彎曲強度為700MPa以上。
(6).一種探針導引零件，其係導引探針卡的探針的探針導引零件，其特徵在於， 具備有板狀主體部、與複數個貫通孔及/或狹縫， 前述主體部係使用上述(1)~(5)中任一項之陶瓷而成，前述複數個貫通孔及/或狹縫係使前述探針插通於前述主體部。
(7).如上述(6)之探針導引零件，其中，前述複數個貫通孔內面及/或前述狹縫內面的表面粗度(Ra)為0.25μm以下。
(8).一種探針卡，其具備有複數個探針、與上述(6)或(7)之探針導引零件。
(9).一種封裝體檢查用插座，其係使用上述(1)~(5)中任一項之陶瓷而成。 [發明的效果]
藉由本發明，可獲得一種陶瓷，其具有：和矽為相同程度的熱膨脹係數、優異的機械強度，可高精度地精細加工，且加工表面為平滑，可抑制使用時的粉粒的產生，因而在作為探針導引零件、探針卡及檢查用插座為特別有用。
[實施發明之最佳形態]
1.陶瓷 本發明相關之陶瓷，以質量%計，含有Si3 N4 ：20.0~ 60.0%、與ZrO2 ：25.0~70.0%、與選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上：5.0 ~15.0%。以下有關含有量的「%」，係意味著「質量%」。
Si3 N4 ：20.0~60.0% Si3 N4 係對於陶瓷賦予高強度而言為有效的，為了獲得所謂的700MPa以上的高彎曲強度，必須含有20.0%以上。但是，若Si3 N4 的含有量若超過60.0%時，將難以獲得和矽晶圓為相同程度的熱膨脹率，即，難以將在-50~500℃的熱膨脹係數設為3.0×10-6 /℃以上。因此，Si3 N4 的含有量係設為20.0~60.0%。下限係較佳設為25.0%，更佳設為30.0%。上限係較佳設為55.0%，更佳設為50.0%。
ZrO2 ：25.0~70.0% ZrO2 係對於陶瓷賦予高熱膨脹率而言為有效的，必須含有25.0%以上。但是，若ZrO2 的含有量超過70.0%時，熱膨脹率會變得過高，將難以獲得和矽晶圓為相同程度的熱膨脹率，即，難以將在-50~500℃的熱膨脹係數設為6.0×10-6 /℃以下。因此，ZrO2 的含有量係設為25.0~70.0%。下限係較佳設為30.0%，更佳設為35.0%。上限係較佳設為65.0%，更佳設為60.0%。
尚，作為ZrO2 係具有單斜晶、正方晶或立方晶的結晶構造者。一般而言，為了賦予ZrO2 陶瓷較高的強度，以使用固溶有數%的氧化物的正方晶ZrO2 為宜。但是，此正方晶ZrO2 ，即便是低溫(未滿200℃)，經長時間曝露時，會相轉移成為單斜晶，於此相轉移之際會使陶瓷的尺寸產生變化。此相轉移，例如在40℃以上即會進行，在150℃以上時更為顯著地進行。因此，將如此般的陶瓷使用作為導引探針卡的探針的探針導引零件時，在室溫下雖然可發揮作為探針導引零件之機能，但隨著使用的溫度領域變高時，使探針予以插通的複數個貫通孔及/或狹縫的位置會偏移，而有阻礙探針的插通之情形。因此，利用在使用溫度下為不會相轉移，即，未有尺寸變化的立方晶ZrO2 為更佳。尚，立方晶ZrO2 中為包含3mol%左右的Y等的元素，但ZrO2 的含有量中亦包含該等元素的量。但是，單斜晶ZrO2 的強度較正方晶或立方晶ZrO2 為低，因此作為結晶構造若包含單斜晶時，該比例只要設為50%以下即可，更佳設為10%以下，0%亦可。
選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上：5.0~15.0% 將本發明相關之陶瓷使用於各式各樣之用途時，必須進行微細的加工。例如，用來使用作為探針導引零件時，必須形成複數個貫通孔及/或狹縫。但是，由於本發明相關之陶瓷係以Si3 N4 及ZrO2 作為主成分而成的高硬度材料，故難以利用機械性加工來進行此微細加工。因此，加工表面(例如，探針導件的貫通孔內表面)會變粗，使用施予如此般加工的構件時，會產生粉粒，而導致對於各種元件的損傷或檢查不良。因此，對於此陶瓷的微細加工，以藉由雷射加工來進行為較佳，但即便是藉由雷射加工，亦難以使加工表面(例如，探針導件的貫通孔內表面)呈現平滑，故難以完全防止使用時的粉粒的產生。
於此，本發明相關之陶瓷中為含有適量的氧化物。即，必須含有5.0%以上的選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上。另一方面，若該等的氧化物的含有量過剩時，會導致彎曲強度的降低，故該等的氧化物的一種以上的含有量係設為15.0%以下。因此，將選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上的含有量設為5.0~15.0%。下限係較佳設為7.0%，更佳設為9.0%。上限係較佳設為13.0%，更佳設為11.0%。
特別是，MgO、Y2 O3 、CeO2 、CaO及HfO2 係除了上述效果以外，亦具有作為燒結助劑之作用，進而，對於使ZrO2 的結晶構造作為立方晶的穩定化而言亦為有效的。又，TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 係除了上述效果以外，亦具有作為燒結助劑之作用。因此，以含有選自MgO、Y2 O3 、CeO2 、CaO及HfO2 中之1種以上、與選自TiO2 、Al2 O3 、SiO2 、MoO3 、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上為較佳。 尚，各成分的含有量(質量%)，可藉由ICP發射光譜分析法來進行測定。又，上述所舉出的成分以外的殘餘部分，雖然未特別限制，但以極盡可能地少為佳，殘餘部分的含有量較佳為10.0%以下，更佳為5.0%以下，0%亦可。作為殘餘部分，可示例如BN、AlN、SiC等。
在-50~500℃的熱膨脹係數：3.0×10-6 ~6.0×10-6 /℃ 將本發明相關之陶瓷使用於探針導件時，要求著和搭載各IC晶片的矽晶圓的熱膨脹係數為相同程度。此係因為，當檢查時的溫度產生變化時，因矽晶圓的熱膨脹而IC晶片的位置會產生變動。此時，只要是探針導件具有和矽晶圓為相同程度的熱膨脹係數，和矽晶圓的膨脹、收縮為同步調進行移動，因而可維持高精度的檢查。關於此點，當本發明相關之陶瓷被使用於檢查用插座時，亦為相同。因此，在-50~500℃的熱膨脹係數為將3.0×10-6 ~6.0×10-6 /℃設為基準。
彎曲強度：600MPa以上 將本發明相關之陶瓷使用於探針導件時，為了使能承受於檢查時的和探針等的接觸或荷重，要求著具有充分的機械特性。特別是，為了對應於探針導件的小型化、薄型化之趨勢，要求著較以往更為增加的高彎曲強度。關於此點，當本發明相關之陶瓷被使用於檢查用插座時，亦為相同。因此，彎曲強度為將600MPa以上設為基準，更佳設為700MPa以上。
微細加工性 微細加工性為藉由脈衝雷射加工，對於厚度0.3mm的陶瓷材料形成50μm見方的貫通孔9個，並將此時的加工精度藉由圖像測定機(例如，(股)Mitutoyo製Quick Vision)，從雷射的穿出側來觀察孔洞形狀(當加工精度為±2μm以下時，則判斷為良好)而予以評估。
加工表面的粗度 加工表面的粗度為藉由脈衝雷射加工，對於厚度0.3mm的陶瓷材料形成50μm見方的貫通孔9個，並將此時的加工孔洞內面藉由雷射共焦顯微鏡(Keyence製VK-X150)，測定長度100μm以上的任意的5個視野，並進行傾角修正而算出Ra，評估該平均值。將Ra為0.25μm以下設為良好。
150℃熱處理後的裂縫(crack)產生的有無 150℃熱處理後的裂縫產生的有無，係將厚度0.3mm的陶瓷材料以5℃/分從室溫昇溫至150℃，以150℃保持100小時後，以室溫下自然放冷，當陶瓷達到室溫後再靜置5小時，之後使用數位顯微鏡(Keyence製VHX-6000)，以觀察倍率200倍來攝影5個視野以上，從攝影圖像中來評估裂縫產生的有無。當未產生裂縫時，則設為○；當有產生裂縫時，則設為×。
2.陶瓷的製造方法 以下對於本發明相關之陶瓷的製造方法例進行說明。
將Si3 N4 粉末、與ZrO2 粉末、與選自MgO、Y2 O3 、CeO2 、CaO、HfO2 、TiO2 、Al2 O3 、SiO2 、H2 MoO4 (燒結後成為MoO3 )、CrO、CoO、ZnO、Ga2 O3 、Ta2 O5 、NiO及V2 O5 中之1種以上的氧化物粉末，使用球磨機等的周知方法來進行混合。即，將各粉末一併與溶劑、與陶瓷製或含鐵芯的樹脂製球珠一起在容器內混合，並使其漿料化。此時，作為溶劑可使用水或醇。進而，因應所需亦可使用分散劑或黏合劑等的添加物。
將獲得的漿料利用噴霧乾燥機或減壓蒸發器等的周知方法來進行造粒。即，使用噴霧乾燥機進行噴霧乾燥，使其顆粒化，或使用減壓蒸發器進行乾燥，使其粉末化。
將獲得的粉末以高溫高壓下，例如，熱壓製或HIP(熱等向壓加壓法)等的周知方法來進行燒結，以獲得陶瓷燒結體。熱壓製(hot pressing)之情形時，在氮環境中燒成即可。又，燒成溫度可為1300~1800℃之範圍。當溫度過低時，燒結會變得不足，過高時，會產生氧化物成分熔出等之問題。
加壓力係以10~50MPa之範圍為適當。又，加壓力持續時間會依據溫度或尺寸而不同，但通常為1~4小時左右。又，即使是HIP之情形時，亦只要適當設定溫度或加壓力等的燒成條件即可。此外，亦可採用常壓燒成法或氣氛加壓燒成法等的周知燒成方法。 [實施例]
為了確認本發明之效果，將調配比經過變化的Si3 N4 粉末、與ZrO2 粉末、與選自MgO、Y2 O3 、Al2 O3 、SiO2 、CeO2 、TiO2 及H2 MoO4 (燒結後成為MoO3 )中之1種以上的氧化物粉末，一起和水、分散劑、樹脂、陶瓷製球珠進行混合，將所獲得的漿料使用噴霧乾燥機進行噴霧乾燥，使其成為顆粒狀。將所獲得的顆粒填充至石墨製的模具(die)中，在氮環境中，一邊加壓30MPa的壓力，一邊以1700℃來進行熱壓製燒成2小時，而獲得縱150×橫150×厚30mm的試驗材。
從所獲得的試驗材採取試片，以進行各種的試驗。
＜熱膨脹率＞ 依據JIS R1618來求得上述試驗材在-50~500℃的熱膨脹係數。
＜彎曲強度＞ 依據JIS R1601來求得上述試驗材的三點彎曲強度。將彎曲強度為600MPa以上之情形設為良好。
＜相對密度＞ 依據JIS C2141來求得上述試驗材的體密度(bulk density)，將求得的體密度除以理論密度而求得相對密度。將相對密度為90%以上之情形設為良好。
＜楊氏係數＞ 依據JIS R1602來求得上述試驗材的楊氏係數(Young modulus)。將楊氏係數為230GPa以上之情形設為良好。
＜微細加工性＞ 微細加工性為藉由脈衝雷射加工，對於厚度0.3mm的陶瓷材料形成50μm見方的貫通孔9個，並將此時的加工精度藉由圖像測定機(例如，(股)Mitutoyo製Quick Vision)，從雷射的穿出側來觀察孔洞形狀(當加工精度為±2μm以下時，則判斷為良好)而予以評估。將可形成加工精度為 ±2μm以下的孔洞之情形設為「○」，將此以外之情形(殘留有材料之情形、形狀扭曲之情形等)設為「×」。尚，圖8為表示雷射加工時的狀態的概略圖。如圖8所示般，將陶瓷中照射雷射光之側，設為「雷射照射側」，將雷射照射側的相反側，設為「雷射穿出側」。
＜加工表面的粗度＞ 加工表面的粗度為藉由脈衝雷射加工，對於厚度0.3mm的陶瓷材料形成50μm見方的貫通孔9個，並將此時的加工孔洞內面藉由雷射共焦顯微鏡(Keyence製VK-X150)，測定長度100μm以上的任意的5個視野，並進行傾角修正而算出Ra，評估該平均值。將Ra為0.25μm以下設為良好。尚，加工表面的粗度為對於平行陶瓷材料的厚度方向的剖面，來觀察孔洞內面之包含厚度中心部之區域(具體如圖8中以長方形所包圍之部分)。
Figure 02_image001
圖3為表示從實施例6的微細加工後的孔洞的上方所攝影之照片，圖4為表示從比較例3的微細加工後的孔洞的上方所攝影之照片，圖5為表示從比較例4的微細加工後的孔洞的上方所攝影之照片。又，圖6為表示從實施例6的微細加工後的孔洞的內面所攝影之照片，圖7為表示從比較例5的微細加工後的孔洞的內面所攝影之照片。
如表1所示般，比較例1及7係由於Si3 N4 過多、ZrO2 過少，故熱膨脹率為低。比較例2及3係由於Si3 N4 過少、ZrO2 過多，故熱膨脹率為高，又，微細加工性為惡化。比較例4係由於Y2 O3 過多，故熱膨脹率為高，又，彎曲強度及微細加工性為惡化。雖然比較例5、6為含有BN來作為主成分，但由於Si3 N4 或ZrO2 為本發明之範圍外，故彎曲強度為惡化。雖然比較例8為含有AlN來作為主成分，但由於Si3 N4 或ZrO2 為本發明之範圍外，故彎曲強度為惡化。比較例9係僅以ZrO2 所構成者，雖然彎曲強度等的性能為優異，但熱膨脹率變得過高，又，微細加工性為惡化。
相較於此，實施例1~17之熱膨脹率及彎曲強度皆為良好之範圍，微細加工性及加工表面的粗度亦為優異。特別是如圖3~5所示般，於微細加工後，比較例3為產生材料殘留，比較例4為孔洞形狀產生扭曲，相較於此，實施例6則可形成精密的孔洞。又，如圖6及圖7所示般，比較例5之孔洞內部的表面粗度為粗(如表1所表示般，Ra：0.33)，但實施例6之孔洞內部的表面粗度為平滑(如表1所表示般，Ra：0.16)。雖然實施例14、實施例15為滿足所要求的性能，但由於包含正方晶的ZrO2 ，故於150℃的熱處理後確認到有裂縫的產生。該等的陶瓷在常溫下的使用為沒有問題，但不適合於在加熱條件下之使用。 [產業利用性]
藉由本發明，可獲得一種陶瓷，其具有：和矽為相同程度的熱膨脹係數、優異的機械強度，可高精度地精細加工，且加工表面為平滑，可抑制使用時的粉粒的產生，因而在作為探針導引零件、探針卡及檢查用插座為特別有用。
10‧‧‧探針卡 11‧‧‧探針 12‧‧‧探針導件 12a‧‧‧貫通孔 13‧‧‧矽晶圓 14‧‧‧IC晶片
[圖1] 圖1為示例探針卡之構成之剖面圖。 [圖2] 圖2為示例探針導件之構成之俯視圖。 [圖3] 圖3為從實施例6的微細加工後的孔洞的上方所攝影之照片。 [圖4] 圖4為從比較例3的微細加工後的孔洞的上方所攝影之照片。 [圖5] 圖5為從比較例4的微細加工後的孔洞的上方所攝影之照片。 [圖6] 圖6為從實施例6的微細加工後的孔洞的內面所攝影之照片。 [圖7] 圖7為從比較例5的微細加工後的孔洞的內面所攝影之照片。 [圖8] 圖8為雷射加工時的狀態的概略圖。
10‧‧‧探針卡
11‧‧‧探針
12‧‧‧探針導件
12a‧‧‧貫通孔
13‧‧‧矽晶圓
14‧‧‧IC晶片

Claims (9)

  1. 一種陶瓷，其特徵在於，以質量%計，含有Si3N4：20.0~60.0%、與ZrO2：25.0~70.0%、與選自MgO、Y2O3、CeO2、CaO、HfO2、TiO2、Al2O3、SiO2、MoO3、CrO、CoO、ZnO、Ga2O3、Ta2O5、NiO及V2O5中之1種以上：5.0~15.0%，且上述成分以外的殘餘部分為10.0%以下，在-50~500℃的熱膨脹係數為3.0×10-6~6.0×10-6/℃，且三點彎曲強度為700MPa以上。
  2. 如請求項1之陶瓷，其中，以質量%計，含有選自MgO、Y2O3、CeO2、CaO及HfO2中之1種以上、與選自TiO2、Al2O3、SiO2、MoO3、CrO、CoO、ZnO、Ga2O3、Ta2O5、NiO及V2O5中之1種以上。
  3. 如請求項1或2之陶瓷，其中，ZrO2的結晶相為正方晶、或正方晶及單斜晶、或立方晶、或立方晶及正方晶、或立方晶及單斜晶。
  4. 如請求項1或2之陶瓷，其中，ZrO2為立方晶。
  5. 如請求項3之陶瓷，其中，其中，ZrO2為立方晶。
  6. 一種探針導引零件，其係導引探針卡的探針的探針導引零件，其特徵在於，具備有板狀主體部、與複數個貫通孔及/或狹縫，前述主體部係使用請求項1~5中任一項之陶瓷而成，前述複數個貫通孔及/或狹縫係將前述探針插通於前述主體部。
  7. 如請求項6之探針導引零件，其中，前述複數個貫通孔內面及/或前述狹縫內面的表面粗度(Ra)為0.25μm以下。
  8. 一種探針卡，其特徵在於，具備有複數個探針、與請求項6或7之探針導引零件。
  9. 一種封裝體檢查用插座，其特徵在於，使用請求項1~5中任一項之陶瓷而成。
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JPWO2022024888A1 (zh) * 2020-07-27 2022-02-03
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