CN111092031A

CN111092031A - Substrate processing apparatus, substrate processing method, and storage medium

Info

Publication number: CN111092031A
Application number: CN201911012334.XA
Authority: CN
Inventors: 川渕洋介; 池田恭子
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2018-10-23
Filing date: 2019-10-23
Publication date: 2020-05-01
Anticipated expiration: 2039-10-23
Also published as: JP7336306B2; TW202025272A; KR20200045960A; JP2020068372A

Abstract

The invention provides a substrate processing apparatus, a substrate processing method and a storage medium, wherein the substrate processing apparatus can prevent pattern damage when a drying liquid is removed from the surface of a substrate. The substrate processing apparatus includes: a substrate holding section for holding a substrate; a drying liquid supply unit configured to supply a drying liquid to the surface of the substrate held by the substrate holding unit; a temperature adjustment unit that changes the surface temperature of the substrate; and a control unit for controlling the temperature adjustment unit. The control unit controls the temperature adjustment unit so that a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate.

Description

Substrate processing apparatus, substrate processing method, and storage medium

Technical Field

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

Background

As a method of drying the substrate after the cleaning process, a method of supplying a drying liquid to the front surface of the substrate, replacing a rinse liquid or the like with the drying liquid, and then removing the drying liquid has been studied (see patent document 1).

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2014-90015

Disclosure of Invention

Problems to be solved by the invention

The present disclosure provides a technique capable of preventing pattern breakage from occurring when a drying liquid is removed from a substrate surface.

Means for solving the problems

A substrate processing apparatus according to an embodiment of the present disclosure includes: a substrate holding section for holding a substrate; a drying liquid supply unit configured to supply a drying liquid to the surface of the substrate held by the substrate holding unit; a temperature adjustment unit that changes the surface temperature of the substrate; and a control unit for controlling the temperature adjustment unit. The control unit controls the temperature adjustment unit so that a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate.

ADVANTAGEOUS EFFECTS OF INVENTION

According to an exemplary embodiment, it is possible to prevent pattern breakage from occurring when the drying liquid is removed from the surface of the substrate.

Drawings

Fig. 1 is a plan view schematically showing a substrate processing system according to an exemplary embodiment.

Fig. 2 is a schematic view of a substrate processing apparatus according to an exemplary embodiment.

Fig. 3 is a flowchart illustrating a substrate processing method according to an exemplary embodiment.

Fig. 4 (a), 4 (b), and 4 (c) are diagrams illustrating the IPA discharging process performed by the temperature adjusting unit according to the first embodiment.

Fig. 5 (a), 5 (b), and 5 (c) are diagrams illustrating IPA discharge processing performed by the temperature adjustment unit according to the modification of the first embodiment.

Fig. 6 (a), 6 (b), and 6 (c) are diagrams illustrating IPA discharge processing performed by the temperature adjustment unit according to the modification of the first embodiment.

Fig. 7 (a), 7 (b), and 7 (c) are diagrams illustrating IPA discharge processing performed by the temperature adjustment unit according to the modification of the second embodiment.

Fig. 8 (a), 8 (b), and 8 (c) are diagrams of IPA discharge processing by the temperature adjustment unit according to the modification of the second embodiment.

Fig. 9 (a), 9 (b), and 9 (c) are diagrams illustrating IPA discharge processing performed by the temperature adjustment unit according to the modification of the second embodiment.

Fig. 10 (a), 10 (b), and 10 (c) are diagrams illustrating IPA discharge processing performed by the temperature adjustment unit according to the modification of the second embodiment.

Fig. 11 (a) and 11 (b) are diagrams for explaining another example of the IPA discharging process performed by the temperature adjusting unit.

Fig. 12 (a) and 12 (b) are diagrams for explaining another example of the IPA discharging process performed by the temperature adjusting unit.

Fig. 13 (a) and 13 (b) are diagrams for explaining another example of the IPA discharging process performed by the temperature adjusting unit.

Detailed Description

Various exemplary embodiments are described in detail below with reference to the accompanying drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals.

< first embodiment >

[ Structure of substrate processing System ]

Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to a first embodiment. Hereinafter, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis orthogonal to each other are defined, and the positive Z axis direction is set to be the vertically upward direction.

As shown in fig. 1, a substrate processing system 1 includes a first carry-in/out station 2 and a processing station 3. The loading/unloading station 2 is provided adjacent to the processing station 3.

The loading/unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. A plurality of carriers C, which accommodate a plurality of substrates, semiconductor wafers (hereinafter, wafers W) in the present embodiment, in a horizontal state, are placed on the carrier placement unit 11.

The conveying unit 12 is provided adjacent to the carrier placement unit 11, and a substrate conveying device 13 and a delivery unit 14 are provided inside the conveying unit 12. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. The substrate transfer device 13 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis, and the substrate transfer device 13 transfers the wafer W between the carrier C and the transfer unit 14 by using the wafer holding mechanism.

The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the conveying section 15.

The conveying unit 15 includes a substrate conveying device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. The substrate transfer device 17 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis, and the substrate transfer device 17 transfers the wafer W between the interface 14 and the processing unit 16 using the wafer holding mechanism.

The processing unit 16 performs a predetermined substrate process on the wafer W conveyed by the substrate conveying device 17 under the control of a control unit 18 of the control device 4 described later.

The substrate processing system 1 further includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 reads and executes the program stored in the storage unit 19 to control the operation of the substrate processing system 1.

Further, the program may be stored in a storage medium readable by a computer, and installed from the storage medium into the storage section 19 of the control device 4. Examples of the storage medium readable by a computer include a Hard Disk (HD), a Flexible Disk (FD), a Compact Disk (CD), a magneto-optical disk (MO), and a memory card.

In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the carry-in/out station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the wafer W taken out on the delivery unit 14. The wafer W placed on the transfer unit 14 is taken out of the transfer unit 14 by the substrate transfer device 17 of the processing station 3 and then carried into the processing unit 16.

After the wafer W carried into the processing unit 16 is processed by the processing unit 16, the wafer W is carried out of the processing unit 16 by the substrate carrier 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the transfer unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transport apparatus 13.

[ Structure of substrate processing apparatus ]

The structure of the substrate processing apparatus 10 included in the substrate processing system 1 will be described with reference to fig. 2. The substrate processing apparatus 10 is provided in a processing unit 16 of the substrate processing system 1.

As shown in fig. 2, the substrate processing apparatus 10 includes a chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, a recovery cup 50, and a temperature adjustment unit 60.

The chamber 20 accommodates the substrate holding mechanism 30, the processing liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. The FFU 21 has a function of forming a down flow in the chamber 20. The FFU 21 forms a downflow gas by supplying the downflow gas supplied from a downflow gas supply pipe (not shown) into the chamber 20.

The substrate holding mechanism 30 has a function of rotatably holding the wafer W. The substrate holding mechanism 30 includes a holding portion 31, a column portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The support column portion 32 is a member extending in the vertical direction, and a base end portion of the support column portion 32 is rotatably supported by the drive portion 33, and the holding portion 31 is horizontally supported at a tip end portion of the support column portion 32. The driving unit 33 rotates the column portion 32 about the vertical axis. The substrate holding mechanism 30 rotates the column part 32 using the driving part 33, thereby rotating the holding part 31 supported by the column part 32 and rotating the wafer W held by the holding part 31.

The processing liquid supply unit 40 supplies the processing liquid to the wafer W. The processing liquid supply unit 40 is connected to a processing liquid supply source 80. The processing liquid supply unit 40 has a nozzle 41 for supplying the processing liquid from the processing liquid supply source 80. The processing liquid supply source 80 has a plurality of supply sources for the processing liquid, and changes the processing liquid to be supplied in accordance with the progress of the processing of the wafer W. The nozzle 41 is provided at a head portion of a nozzle arm (not shown) that is rotatable in a lateral direction (horizontal direction). The processing liquid can be supplied onto the wafer W while changing the position of the tip of the nozzle 41 by the rotational movement of the nozzle arm.

As the processing liquid supply source 80, a chemical liquid supply source 81, a DIW supply source 82, and an IPA supply source 83 are provided. The chemical supply source 81 supplies one or more chemicals for processing the surface of the wafer W. The DIW supply source 82 supplies DIW (Deionized Water) for rinsing the surface of the wafer W. The IPA supply source 83 supplies IPA (isopropyl alcohol) for replacing DIW on the surface of the wafer W with IPA. IPA is a volatile drying liquid, and has a small surface tension compared to DIW. Therefore, by replacing the DIW on the surface of the wafer W with IPA and then drying the wafer W by removing IPA, the occurrence of pattern breakage on the surface of the wafer W when drying the wafer W is prevented. The chemical liquid supply source 81, the DIW supply source 82, and the IPA supply source 83 are connected to the nozzle 41 through valves V1, V2, and V3, respectively. The processing liquid supplied from the nozzle 41 to the wafer W can be changed by opening and closing the switching valves V1, V2, and V3.

In fig. 2, only one nozzle 41 is shown, but a plurality of nozzles may be provided individually corresponding to a plurality of treatment liquids, or a part of the treatment liquids may share one nozzle.

The movement of the nozzle 41, the supply/stop of the liquid from each of the processing liquid supply sources 80, and the like are controlled by the control unit 18.

The recovery cup 50 is disposed so as to surround the holding portion 31, and captures the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A drain port 51 is formed in the bottom of the recovery cup 50, and the processing liquid captured by the recovery cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. Further, an exhaust port 52 is formed at the bottom of the recovery cup 50, and the exhaust port 52 is used for exhausting the gas supplied from the FFU 21 to the outside of the processing unit 16.

The temperature adjusting unit 60 has a function of controlling the temperature of the surface of the wafer W held by the holding unit 31. In the substrate processing apparatus 10 shown in fig. 2, the temperature adjustment unit 60 includes a first temperature adjustment unit 61 for controlling the temperature of the entire surface of the wafer W on the back surface side of the holding unit 31, and a linear second temperature adjustment unit 62 provided on the front surface side of the wafer W. The first temperature adjustment unit 61 and the second temperature adjustment unit 62 control the temperature distribution of the surface of the wafer W by heating or cooling, respectively. That is, the first temperature adjustment unit 61 and the second temperature adjustment unit 62 function as a substrate heating unit or a substrate cooling unit.

The first temperature adjustment unit 61 is provided on the back surface side of the wafer W to control the temperature of the entire wafer W. However, the first temperature adjustment unit 61 controls the temperature of the wafer W with respect to the surface, but may be configured such that: the wafer W is not heated or cooled at the same temperature, and the temperature distribution on the surface of the wafer W is varied. For example, the following structure may be adopted: the first temperature adjustment unit 61 is divided into a plurality of regions, and performs independent temperature control, that is, so-called multi-channel control (control of "multi チャンネル" in japanese) for each division, thereby heating different positions of the wafer W at different heating temperatures. Further, the following configuration is possible: the surface temperature of the wafer W is made to have a predetermined gradient by the multi-pass control. When the wafer W is heated by the first temperature adjustment unit 61, a hot plate can be used as the first temperature adjustment unit 61. When the first temperature adjustment unit 61 is used to cool the wafer W, a cooling plate can be used as the first temperature adjustment unit 61. However, the configuration of the first temperature adjustment unit 61 is not limited to this.

The second temperature adjustment unit 62 is a linear heat source or cooling source extending in the lateral direction (horizontal direction) at a predetermined distance from the surface of the wafer W (see fig. 4 a). Fig. 2 shows a state in which the second temperature adjustment unit 62 is disposed so that the longitudinal direction thereof is the Y-axis direction. The second temperature adjustment unit 62 is provided to be movable in a lateral direction (horizontal direction) and in a direction (for example, orthogonal direction) intersecting with the longitudinal direction of the second temperature adjustment unit 62. The second temperature adjustment unit 62 shown in fig. 2 is movable in the X-axis direction over the entire region overlapping the surface of the wafer W on the holding unit 31 in a plan view. With such a configuration, a specific region of the wafer W (a region close to the second temperature adjustment unit 62) can be heated or cooled. When the wafer W is heated by the second temperature adjustment unit 62, a laser or a lamp can be used as the second temperature adjustment unit 62. When the wafer W is cooled by the second temperature adjustment unit 62, a gas flow (cooled gas) can be used as the second temperature adjustment unit 62. However, the configuration of the second temperature adjustment unit 62 is not limited to this.

The control unit 18 controls the adjustment of the heating temperature or the cooling temperature by the first temperature adjustment unit 61 and the second temperature adjustment unit 62, the movement of the second temperature adjustment unit 62, and the like.

[ method of treating substrate ]

The contents of the liquid treatment performed by the substrate treatment apparatus 10 will be described with reference to fig. 3.

First, when the wafer W carried into the processing unit 16 by the substrate transfer device 17 is held by the holding portion 31 of the substrate holding mechanism 30, the nozzle 41 is moved to a processing position on the wafer W. Then, the chemical solution is supplied from the nozzle 41 while the wafer W is rotated at a predetermined rotation speed, thereby performing the chemical solution process (S01). At this time, the column part 32 and the driving part 33 shown in fig. 2 correspond to a rotation mechanism for rotating the wafer W held by the holding part 31.

Next, a rinse cleaning process is performed in which the processing liquid supplied from the nozzle 41 is switched to DIW to be cleaned (S02). Specifically, the DIW is supplied to the wafer W having the liquid film of the chemical solution in the state where the wafer W is rotated. By supplying the DIW, the residue attached to the wafer W is washed away by the DIW.

After the rinsing and cleaning process is performed for a predetermined time, the supply of DIW from the nozzle 41 is stopped. Then, a replacement process is performed in which IPA is supplied from the nozzle 41 to the front surface of the rotating wafer W to replace the DIW on the front surface of the wafer W with IPA (S03: drying liquid supply step). IPA is supplied to the surface of the wafer W, whereby an IPA liquid film is formed on the surface of the wafer W. Thus, the DIW remaining on the surface of the wafer W is replaced with IPA.

After the DIW on the front surface of the wafer W is sufficiently replaced with IPA, supply of IPA to the wafer W is stopped. Then, a discharge process is performed to discharge the IPA remaining on the surface of the wafer W from the surface of the wafer W (S04: discharge step). The surface of the wafer W is dried by discharging IPA from the surface of the wafer W. In the substrate processing apparatus 10, the temperature adjustment unit 60 causes the temperature deviation on the surface of the wafer W, thereby promoting the IPA discharge from the surface of the wafer W. This point will be described later.

When the surface of the wafer W is dried, the liquid treatment for the wafer W is completed. The wafer W is carried out from the substrate processing apparatus 10 by a process reverse to the process at the time of carrying in.

[ discharge treatment ]

The IPA discharge process by the temperature adjuster 60 will be described with reference to fig. 4 (a) to 4 (c). Fig. 4 (a) is a perspective view illustrating the operation of the second temperature adjustment unit 62 disposed on the front surface of the wafer W. Fig. 4 (b) is a diagram illustrating temperature control of the wafer W by the first temperature adjustment unit 61 and the second temperature adjustment unit 62. As shown in fig. 4 (b), a predetermined pattern W1 (e.g., a resist pattern) is formed on the front surface of the wafer W. Fig. 4 (c) is a diagram illustrating the temperature of the surface of the wafer W.

Before the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. In the example shown in fig. 4 (a) to 4 (c), the first temperature adjustment unit 61 functions as a substrate cooling unit that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a fixed temperature by the first temperature adjustment unit 61. The second temperature adjustment unit 62 functions as a substrate heating unit that heats a predetermined position on the front surface of the wafer W from the front surface side of the wafer W. When discharging IPA, as shown in fig. 4 (b), the second temperature adjustment unit 62 is disposed close to the end of the wafer W. Then, the surface of the end of the wafer W is heated by the second temperature adjustment unit 62.

As a result, as shown in fig. 4 c, the temperature T1 of the end portion (outer periphery) on the side where the second temperature adjustment portion 62 is disposed in proximity to the surface of the wafer W is higher than the temperature T2 of the other region. Further, a drying target region a1 that changes from the temperature T1 to the temperature T2 is formed between the end of the wafer W at the temperature T1 and the unprocessed region a2 at the temperature T2. That is, the surface of the wafer W includes a drying target area a1 and an unprocessed area a2 adjacent to the drying target area a 1. In other words, the temperature of the edge portion La of the IPA liquid film L near the drying target region a1 is higher than the temperature of the remaining portion Lb of the IPA liquid film L corresponding to the untreated region a 2. Therefore, a temperature difference is generated between the edge portion La and the remaining portion Lb. Therefore, in the drying target region a1, the IPA liquid film L is collected toward the untreated region a2 side where the temperature is low.

In the drying target region a1, the temperature of the front surface of the wafer W is higher than that of the other region having the temperature T2, and therefore, the evaporation (volatilization) of IPA from the IPA liquid film L is promoted. As a result, the film thickness of the IPA liquid film L in the drying target region a1 is smaller than the film thickness of the untreated region a2 (region at the temperature T2). As a result, a difference in surface tension occurs between the IPA liquid film L in the drying target region a1 and the IPA liquid film L in the untreated region a2, and the surface tension of the IPA liquid film L in the drying target region a1 is smaller than that of the untreated region a 2. As a result, so-called marangoni convection occurs in which the edge La of the IPA liquid film L in the drying target region a1 is pulled toward the untreated region a2 (the right side in fig. 4). The edge La of the IPA liquid film L moves to the low temperature side by the force generated by the marangoni convection.

At this time, as shown in fig. 4 (b), when the second temperature adjustment unit 62 is moved in the direction of the arrow S, the drying target region a1 is moved from the position shown in fig. 4 (c) in the direction of the arrow S. By moving the second temperature adjustment unit 62 in accordance with the accumulation speed of the IPA liquid film L (the movement speed of the edge portion La of the IPA liquid film L), the accumulation of the IPA liquid film L by the marangoni convection can be advanced, and the IPA on the surface of the wafer W can be moved in the direction of the arrow S. Therefore, IPA can be discharged from the front surface of the wafer W at the end Wa of the wafer W on the downstream side in the direction of the arrow S.

A region of the surface of the wafer W to be subjected to the drying process of the IPA liquid film L is a "drying target region a 1". On the other hand, a region of the surface of the wafer W where the drying process of the IPA liquid film L is not performed is an "unprocessed region a 2". In the example shown in fig. 4, the drying target region a1 is a region of the surface of the wafer W that has been heated by the second temperature adjustment unit 62, that is, a region in which a temperature gradient is generated that changes from the temperature T1 to the temperature T2. As described above, in the drying target region a1, the edge La of the IPA liquid film L is pulled toward the untreated region a2 by marangoni convection, and the end of the IPA liquid film L moves. Therefore, the position of the drying target region a1 is controlled so that a temperature gradient is formed on the surface of the wafer W between the drying target region and another region, thereby allowing IPA to be collected on the surface of the wafer W.

[ action and Effect ]

In this manner, in the substrate processing apparatus 10, the temperature difference is formed between the drying target region a1 and the unprocessed region a2 on the front surface of the wafer W by the temperature control of the front surface of the wafer W by the temperature adjusting unit 60. Specifically, a temperature difference is generated in the IPA liquid film L such that the temperature of the edge portion La of the IPA liquid film L is high and the temperature of the remaining portion Lb of the IPA liquid film L is low. This causes marangoni convection at the edge La of the IPA liquid film L. Therefore, IPA is collected in a predetermined direction (specifically, a low temperature side) on the surface of the wafer W, and is discharged from the surface of the wafer W. By configuring to discharge IPA from the front surface of the wafer W by collecting IPA by marangoni convection in this manner, it is possible to prevent the front surface of the wafer W from being damaged by a pattern or the like when IPA is removed from the front surface of the wafer W.

As a method of removing IPA from the front surface of the wafer W, conventionally, a method of rotating the wafer W to move IPA to the outer peripheral side by centrifugal force has been used. In this case, IPA on the front surface of the wafer W flows outward by a centrifugal force. However, when IPA is moved by an external force as described above, a boundary layer having a very small liquid thickness is formed at the end of the IPA liquid film. Since the boundary layer is a region where IPA does not move due to an external force, the surface of the wafer W is dried only by evaporation of IPA. At this time, the evaporation rate of IPA on the surface of the wafer W is not uniform. In particular, since many patterns W1 are formed on the front surface of the wafer W, variations in the liquid level height of IPA are likely to occur due to the shape of the pattern W1 and the like. When the IPA is evaporated in a state where the liquid level of the IPA is different, the pattern W1 is affected by the stress difference caused by the liquid level, and the pattern W1 may be damaged, for example, by pattern breakage.

In contrast, in the substrate processing apparatus 10, IPA on the surface of the wafer W is collected by the marangoni convection generated by the temperature gradient as described above. That is, when IPA is moved by a difference in surface tension, rather than being moved by an external force, it is possible to prevent a boundary layer from being generated at the edge portion La of the IPA liquid film L. That is, since the region dried by evaporation can be eliminated, breakage of the pattern W1 such as pattern breakage can be prevented when IPA is removed. In recent years, the pattern W1 formed on the front surface of the wafer W has a high aspect ratio, and therefore the risk of pattern damage is high, but the incidence of pattern damage can be reduced by using the IPA removal by marangoni convection described above. The temperature gradient on the surface of the wafer W may not necessarily be low on the side where the IPA liquid film L is present, or high on the side where the IPA liquid film L is not present (the side where the wafer W is exposed). Note that, as long as a desired temperature difference is generated between the drying target region and another region (untreated region), a temperature gradient may not be formed in the untreated region a2 (untreated region).

Further, the surface temperature of the wafer W controlled by the temperature adjusting unit 60 is preferably controlled to such an extent that the volatilization of IPA is not promoted. The temperature adjusting unit 60 may be controlled so that the surface temperature of the wafer W becomes 30 ℃ or higher, for example, as long as the temperature is higher than the normal temperature (about 23 ℃) in order to generate marangoni convection in IPA. When the surface temperature of the wafer W is too high, vaporization of IPA is promoted more than movement by aggregation of IPA, and the possibility of pattern breakage increases.

As shown in fig. 4, in the substrate processing apparatus 10, the second temperature adjustment unit 62 is moved horizontally in the arrow S direction from one end of the wafer W, so that the IPA liquid film L is collected in the arrow S direction, and IPA is discharged from the downstream end Wa in the arrow S direction. In this manner, IPA moves in the direction of arrow S on the front surface of the wafer W. In order to promote the movement of IPA, the wafer W on the holding portion 31 may be slightly inclined (about 0.1 ° to 1 °) so that the end Wa is on the lower side. As a method of tilting the wafer W on the holding portion 31, there is a method of generating so-called axial displacement by moving the position of the column portion 32 supporting the holding portion 31 in the lateral direction. In this manner, the wafer W may be slightly inclined to facilitate the discharge of IPA from the end Wa.

The movement of the second temperature adjustment unit 62, the cooling temperature obtained by the first temperature adjustment unit 61, and the like are changed by the control of the control unit 18. The controller 18 may control each part of the temperature adjuster 60 by executing a program predetermined based on liquid characteristics of IPA or the like. The controller 18 may control the operation of each unit of the temperature adjuster 60 to be changed based on, for example, information on the surface state of the wafer W acquired by a camera provided in the substrate processing apparatus 10 for observing the surface of the wafer W.

< first modification >

Next, a modified example of the temperature adjustment unit 60 will be described. As described above, when the temperature gradient is formed so that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high in the vicinity of the edge portion La of the IPA liquid film L, marangoni convection is generated in the edge portion La of the IPA liquid film L. By generating this marangoni convection, the IPA liquid film L is collected by surface tension so as not to form a boundary layer. Therefore, the configuration of the temperature adjustment unit 60 can be appropriately changed as long as the temperature gradient as described above can be formed on the surface of the wafer W.

Fig. 5 (a) to 5 (c) are views showing the temperature adjustment unit 60A according to the first modification. Fig. 5 (a) to 5 (c) correspond to fig. 4 (a) to 4 (c). The temperature adjustment unit 60A differs from the temperature adjustment unit 60 in the following points. That is, in the temperature adjustment unit 60A, the first temperature adjustment unit 61 provided on the back surface side of the wafer W changes the heating temperature depending on the position, thereby forming a temperature gradient on the front surface of the wafer W. That is, the second temperature adjustment unit 62 is not used.

In fig. 5 (b), the heating temperature of the first temperature adjustment section 61 for each position is shown by gradation. That is, the heating temperature is controlled by the first temperature adjustment unit 61 so that the heating temperature is high at the end Wb on the left side in the figure of the wafer W and becomes lower as it goes to the end Wc on the right side in the figure. As a result, as shown in fig. 5 (c), a temperature gradient is formed over the surface temperature of the wafer W from the left end Wb to the right end Wc. That is, in the example shown in fig. 5, a temperature gradient is formed in both the drying target region a1 and the unprocessed region a 2.

As a result, as shown in fig. 5 (b), marangoni convection is generated on the end Wb side of the wafer W in the IPA liquid film L, and the wafer W moves toward the end Wc side. Since the surface temperature of the wafer W is entirely changed to a temperature gradient, even if the edge La of the IPA liquid film L moves toward the end Wc, the edge La is present in the drying target region a 1. Thus, the aggregation and movement of the IPA liquid film L by the marangoni convection continues. That is, the temperature gradient formed over the entire surface of the wafer W functions as a temperature gradient in which the temperature is low on the side where the IPA liquid film L is present and high on the side where the IPA liquid film L is not present (the side where the end Wb of the wafer W is exposed). As a result, the IPA liquid film L moves toward the end Wc and is discharged from the end Wc.

In this way, when the first temperature adjustment unit 61 can control the heating temperature of the wafer W for each different portion, it is possible to provide a gradient in the temperature of the surface of the wafer W without using the second temperature adjustment unit 62 in combination. Therefore, the movement and discharge of the IPA liquid film L can be controlled by the temperature gradient. Even in the case of such a configuration, the occurrence rate of pattern damage can be reduced.

< second modification >

Fig. 6 (a) to 6 (c) are views showing the temperature adjustment unit 60B according to the second modification. Fig. 6 (a) to 6 (c) correspond to fig. 4 (a) to 4 (c). The temperature adjustment unit 60B is different from the temperature adjustment unit 60 in the following point. That is, in the temperature adjustment unit 60B, instead of using the first temperature adjustment unit 61 provided on the back surface side of the wafer W, a temperature gradient is formed on the front surface of the wafer W using the third temperature adjustment unit 63 arranged in parallel with the second temperature adjustment unit 62. That is, the first temperature adjustment unit 61 is not used.

In the temperature adjustment unit 60B, the third temperature adjustment unit 63 can be a linear heat source or cooling source extending in the lateral direction (horizontal direction) similarly to the second temperature adjustment unit 62. In the temperature adjustment unit 60B, the second temperature adjustment unit 62 is used as a heat source, and the third temperature adjustment unit 63 is used as a cooling source. As shown in fig. 6 (a) and 6 (b), the second temperature adjustment unit 62 and the third temperature adjustment unit 63 extend in parallel with each other with the edge La of the IPA liquid film L interposed therebetween, and the third temperature adjustment unit 63 is disposed on the IPA liquid film L side.

As a result, as shown in fig. 6 (c), the drying target region a1 is formed between the second temperature adjustment unit 62 and the third temperature adjustment unit 63. Since the third temperature adjustment unit 63 as a cooling source is disposed on the IPA liquid film L side, a temperature gradient is formed in the drying target region a1 so that the temperature is low on the side where the IPA liquid film L is present and high on the side where the IPA liquid film L is not present (the side where the wafer W is exposed). Therefore, the edge La of the IPA liquid film L moves toward the third temperature adjusting unit 63.

At this time, when the second temperature adjustment unit 62 and the third temperature adjustment unit 63 are moved in the arrow S direction in accordance with the movement of the edge portion La as shown in fig. 6 (b), the drying target region a1 is moved in the arrow S direction from the position shown in fig. 6 (c). By moving the second temperature adjustment unit 62 and the third temperature adjustment unit 63 in accordance with the accumulation speed of the IPA liquid film L (the movement speed of the edge portion La of the IPA liquid film L), the IPA liquid film L can be accumulated by marangoni convection at the edge portion La. This allows IPA on the surface of the wafer W to move in the direction of the arrow S. Therefore, IPA can be discharged from the front surface of the wafer W at the end Wa of the wafer W on the downstream side in the direction of the arrow S.

As described above, even when the temperature adjustment unit 60B is formed by combining the second temperature adjustment unit 62 and the third temperature adjustment unit 63, which are two linear temperature adjustment units, a gradient can be provided with respect to the temperature of the surface of the wafer W. Therefore, the movement and discharge of the IPA liquid film L can be controlled by the temperature gradient. Even in the case of such a configuration, the occurrence rate of pattern damage can be reduced.

< second embodiment >

Next, a second embodiment of the temperature adjustment unit will be described. In the first embodiment, the case where the movement of the IPA liquid film L in one direction (for example, the direction of the arrow S shown in fig. 4 (b)) is promoted by the marangoni convection of IPA generated by the temperature gradient of the front surface of the wafer W is described. Therefore, in the first embodiment, IPA is discharged from one end portion (for example, an end portion Wa shown in fig. 4 (b)) of the wafer W. In contrast, in the second embodiment, a case will be described in which the movement of the IPA liquid film L from the center toward the outer peripheral side of the wafer W is promoted by the marangoni convection of IPA generated by the temperature gradient of the surface of the wafer W. Since the IPA liquid film L moves in different directions from the center toward the outer periphery, IPA is discharged from any portion of the outer periphery of the wafer W.

Note that the point of forming a temperature gradient on the surface of the wafer W is the same as that in the first embodiment. That is, in the vicinity of the end portion of the IPA liquid film L, a temperature gradient is formed such that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high, and marangoni convection is generated in the edge portion La of the IPA liquid film L.

Fig. 7 (a) to 7 (c) and fig. 8 (a) to 8 (c) are views showing the temperature adjustment unit 70 according to the second embodiment. Fig. 7 (a) to 7 (c) and fig. 8 (a) to 8 (c) correspond to fig. 4 (a) to 4 (c), respectively.

The temperature adjustment unit 70 includes a first temperature adjustment unit 71 provided on the back surface side of the wafer W and a second temperature adjustment unit 72 provided on the front surface side of the wafer W.

The first temperature adjustment unit 71 has the same configuration as the first temperature adjustment unit 61 of the temperature adjustment unit 60. That is, the first temperature adjustment unit 71 is provided on the back surface side of the wafer W to control the temperature of the entire wafer W. Further, the first temperature adjustment unit 71 may be configured to: the surface temperature of the wafer W is controlled to have a predetermined gradient by dividing the wafer W into a plurality of regions and performing independent temperature control, that is, so-called multi-pass control, for each zone.

The second temperature adjustment unit 72 is a point-type heat source provided at a predetermined distance from the surface in a region including the center of the wafer W (see also fig. 7 (a)). The second temperature adjustment unit 72 heats a region including the center of the surface of the wafer W. A laser or a lamp can be used as the second temperature adjustment unit 72. However, the configuration of the second temperature adjustment unit 72 is not limited to this. The "region including the center of the surface of the wafer W" heated by the second temperature adjustment unit 72 is a region including the center of the wafer W and having a smaller diameter than the wafer W. The diameter of the region including the center of the front surface of the wafer W can be, for example, 30% or less of the diameter of the wafer W.

The discharge process of discharging IPA by using the temperature adjuster 70 will be described. Before the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. In the example shown in fig. 7 (a) to 7 (c), the first temperature adjustment unit 71 functions as a substrate cooling unit that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a constant temperature by the first temperature adjustment unit 71.

The second temperature adjustment unit 72 functions as a substrate heating unit that heats the vicinity of the center of the wafer W from the front side of the wafer W. When discharging IPA, as shown in fig. 7 (b), the second temperature adjustment unit 62 is disposed near the center of the wafer W and heats the surface near the center of the wafer W.

As a result, as shown in fig. 7 (c), the temperature T1 of the region including the center of the surface of the wafer W is higher than the temperature T2 of the outer circumferential side apart from the second temperature adjustment unit 72. Thus, a drying target region a1 that changes from the temperature T1 to the temperature T2 is formed between the region including the center of the wafer W at the temperature T1 and the unprocessed region a2 at the temperature T2. When the drying target region a1 is formed, the IPA liquid film L is collected toward the region side where the temperature is low in the drying target region a 1. In the drying target region a1, the temperature T1 of a region including the center of the wafer W is set as the center, and gradually decreases toward the outer peripheral side.

In the drying target region a1, marangoni convection is generated due to the difference in surface tension of the IPA liquid film L. Due to the force generated by the marangoni convection, the edge portion La (inner peripheral edge) of the IPA liquid film L moves to the low temperature side, that is, the outer peripheral side of the wafer W.

As the IPA liquid film L is collected, the edge portion La of the IPA liquid film L gradually moves toward the outer peripheral side as shown in fig. 8 (a) and 8 (b). On the other hand, when the first temperature adjustment unit 71 continues to cool the wafer W and the second temperature adjustment unit 72 continues to heat the region including the center of the wafer W, the surface temperature of the region including the center of the wafer W from which the IPA liquid film L has been removed (i.e., dried) is fixed to the temperature T1. On the other hand, the region on the outer peripheral side where the IPA liquid film L remains is maintained at the temperature T2. As a result, as shown in fig. 8 (c), an annular drying target region a1 is formed in the vicinity of the edge La of the IPA liquid film L, that is, in a region where the film thickness of the IPA liquid film L changes. Therefore, marangoni convection is formed near the edge portion La of the IPA liquid film L, and the edge portion La moves toward the outer peripheral side of the wafer W. Further, the drying target region a1 also moves toward the outer peripheral side with the movement of the edge portion La. In this manner, by continuing the movement of the edge portion La of the IPA liquid film L by marangoni convection, IPA can be discharged from the front surface of the wafer W on the outer periphery of the wafer W.

Even when the temperature adjustment unit 70 is used in this manner, the drying target region a1 can be formed by controlling the temperature of the front surface of the wafer W. That is, a temperature gradient is formed in the vicinity of the edge La of the IPA liquid film L so that the temperature is low on the side where the IPA liquid film L is present and is high on the side where the IPA liquid film L is not present (the side where the wafer W is exposed). This causes marangoni convection in the edge La of the IPA liquid film L. As a result, IPA is collected on the side where the surface temperature of the wafer W is low, and IPA can be discharged from the surface of the wafer W. Therefore, it is possible to prevent pattern damage and the like from occurring on the surface of the wafer W when IPA is removed from the surface of the wafer W.

In the temperature adjustment unit 70, the heating temperature of the region including the center of the wafer W by the second temperature adjustment unit 72 may be gradually changed as the edge portion La of the IPA liquid film L moves toward the outer periphery. That is, the heating temperature obtained by the second temperature adjustment unit 72 can be changed so that the surface temperature of the region of the wafer W where the edge portion La is formed can be in a temperature range in which the liquid IPA film is likely to form marangoni convection. In this case, the surface temperature of the region including the center of the wafer W is considered to be higher than the temperature T1, but the surface temperature of the wafer W may be appropriately changed as long as the wafer W is not affected by the temperature T1.

< third modification >

Next, a modified example of the temperature adjustment unit 70 will be described. As described above, when the temperature gradient is formed so that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high in the vicinity of the edge portion La of the IPA liquid film L, marangoni convection is generated in the edge portion La of the IPA liquid film L. By generating this marangoni convection, the IPA liquid film L is collected by surface tension so as not to form a boundary layer. Therefore, the configuration of the temperature adjustment unit 70 can be appropriately changed as long as the temperature gradient as described above can be formed on the surface of the wafer W.

Fig. 9 (a) to 9 (c) and fig. 10 (a) to 10 (c) show a temperature adjustment unit 70A according to a third modification. Fig. 9 (a) to 9 (c) and fig. 10 (a) to 10 (c) correspond to fig. 4 (a) to 4 (c), respectively.

The temperature adjustment unit 70A differs from the temperature adjustment unit 70 in the following points. That is, in the temperature adjustment unit 70A, the first temperature adjustment unit 71 provided on the back surface side of the wafer W changes the heating temperature depending on the position, thereby forming a temperature gradient on the front surface of the wafer W. That is, the second temperature adjustment unit 72 is not used.

In fig. 9 (b), the heating temperature of the first temperature adjustment section 71 for each position is shown by gradation. That is, the heating temperature is controlled by the first temperature adjustment unit 71 so that the heating temperature is high in the vicinity of the center of the wafer W and gradually decreases toward the outer peripheral side. As a result, as shown in fig. 9 (c), the surface temperature of the wafer W has a temperature gradient from the vicinity of the center of the wafer W toward the outer periphery thereof. That is, a temperature gradient is formed over the entire surface of the wafer W. In other words, in the example shown in fig. 9, a temperature gradient is formed in both the drying target region a1 and the unprocessed region a 2.

The temperature adjustment unit 70A has a gas ejection unit 73 capable of blowing gas onto the surface of the wafer W, instead of the second temperature adjustment unit 72. The gas injection unit 73 blows a gas such as nitrogen, for example, onto the surface of the wafer W. By injecting the gas, an opening can be formed in the IPA liquid film L near the center of the wafer W.

The discharge process of discharging IPA by using the temperature adjuster 70A will be described. Before the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. As described above, the first temperature adjustment unit 71 gradually decreases the surface temperature of the wafer W from the vicinity of the center toward the outer peripheral side.

Here, the gas injection part 73 forms an opening of the IPA liquid film L in the vicinity of the center of the wafer W, thereby exposing the vicinity of the center of the wafer W. That is, the IPA liquid film L is dried near the center of the wafer W. Therefore, the region near the center of the wafer W becomes the drying target region a1, and the region on the outer peripheral side of the drying target region a1 becomes the unprocessed region a 2. Thereby, an edge portion La (inner peripheral edge) of the IPA liquid film L is formed at the center of the wafer W. When the edge La of the IPA liquid film L is formed, the IPA liquid film L is focused toward a low temperature region side by a temperature gradient formed over the entire surface of the wafer W. As described above, in the drying target region a1, marangoni convection is generated due to the difference in surface tension of the IPA liquid film L, and the edge portion La of the IPA liquid film L moves to the low temperature side, that is, the outer peripheral side of the wafer W.

As the IPA liquid film L is collected, the edge portion La of the IPA liquid film L gradually moves toward the outer peripheral side as shown in fig. 10 (a) and 10 (b). When the wafer W is continuously heated by the first temperature adjustment unit 71, the surface temperature of the wafer W near the center from which the IPA liquid film L has been removed (i.e., dried) is fixed to a predetermined temperature. On the other hand, as shown in fig. 10 (c), the region on the outer peripheral side where the IPA liquid film L remains is in a state where a temperature gradient remains. Therefore, marangoni convection is formed near the edge portion La of the IPA liquid film L, and the edge portion La moves toward the outer peripheral side of the wafer W. That is, the annular drying target region a1 moves toward the outer periphery side as the edge portion La moves. In this manner, by continuing the movement of the edge portion La of the IPA liquid film L by marangoni convection, IPA can be discharged from the front surface of the wafer W on the outer periphery of the wafer W.

Even when the temperature adjustment unit 70A is used in this manner, the drying target region a1 can be formed by controlling the temperature of the front surface of the wafer W. That is, a temperature gradient is formed in the vicinity of the edge La of the IPA liquid film L so that the temperature is low on the side where the IPA liquid film L is present and is high on the side where the IPA liquid film L is not present (the side where the wafer W is exposed). This causes marangoni convection in the edge La of the IPA liquid film L. As a result, IPA is collected on the side where the surface temperature of the wafer W is low, and IPA can be discharged from the surface of the wafer W. Therefore, it is possible to prevent pattern damage and the like from occurring on the surface of the wafer W when IPA is removed from the surface of the wafer W.

In the temperature adjustment unit 70A, the heating temperature obtained by the first temperature adjustment unit 71 may be gradually changed as the edge portion La of the IPA liquid film L moves toward the outer periphery. That is, the heating temperature obtained by the first temperature adjustment unit 71 can be changed so that the surface temperature of the region of the wafer W where the edge portion La is formed can be in a temperature range in which the liquid IPA film is likely to form marangoni convection.

In the temperature adjustment unit 70A, the heating temperature is controlled by the first temperature adjustment unit 71 so that the heating temperature is high in the vicinity of the center of the wafer W and gradually decreases toward the outer peripheral side. However, the method of heating the wafer W by the first temperature adjustment unit 71 is not particularly limited as long as the drying target region a1 can be formed in the region where the edge portion La of the IPA liquid film L is formed. For example, even when the first temperature adjustment unit 71 is not disposed in a shape corresponding to the entire surface of the wafer W and the first temperature adjustment unit 71 is disposed only in the vicinity of the center of the wafer W, the annular drying target region a1 can be formed on the surface of the wafer W by controlling the heating temperature. Therefore, the formation of marangoni convection at the edge portion La of the IPA liquid film L and the movement of the IPA liquid film L can be controlled by the drying target region a 1.

[ others ]

The embodiments disclosed herein are considered to be illustrative in all respects, rather than restrictive. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the gist thereof.

For example, in the above embodiment, the case where the drying liquid is IPA was described, but the drying liquid is not limited to IPA.

Although the above-described embodiments and modifications have been described, the configuration and arrangement of the temperature adjustment unit functioning as the substrate heating unit or the substrate cooling unit can be appropriately changed. For example, in the above-described embodiment, the first

temperature adjustment units

61 and 71 for cooling the entire surface of the wafer W are provided on the back surface side (the holding unit 31 side) of the wafer W, but may be provided on the front surface side of the wafer W.

When viewed from above, a temperature difference may be generated not only in different regions (the drying target region a1 and the untreated region a2) on the surface of the wafer W but also in the vertical direction (the height direction of the IPA liquid film L) of the IPA liquid film L. For example, as shown in fig. 11 and 12, the temperature adjustment unit 60 may include a first temperature adjustment unit 61 disposed on the back surface side of the wafer W and a fourth temperature adjustment unit 64 (low temperature member) disposed on the front surface side of the wafer W. The fourth temperature adjustment unit 64 is configured to move along the surface of the wafer W above the wafer W. The fourth temperature adjustment unit 64 may be set to a temperature lower than the temperature of the first temperature adjustment unit 61 for heating the wafer W. That is, the fourth temperature adjustment unit 64 may be set to a temperature lower than the temperature of the wafer W heated by the first temperature adjustment unit 61. As a result, a temperature difference is generated between the upper portion of the IPA liquid film L in contact with the fourth temperature adjusting unit 64 and the lower portion of the IPA liquid film L in contact with the wafer W, and the surface tension acting on the upper portion is relatively increased (marangoni phenomenon). Therefore, the IPA liquid film L is pulled toward the fourth temperature adjustment unit 64. Therefore, the controller 18 controls the operation of the fourth temperature adjuster 64 such that the fourth temperature adjuster 64 moves along the surface of the wafer W (see arrow S in fig. 11 and 12), and thereby the IPA liquid film L also moves along the surface of the wafer W along with the fourth temperature adjuster 64. As a result, the controller 18 can appropriately control the moving direction and the moving speed of the fourth temperature adjuster 64, and can discharge IPA from the surface of the wafer W at a desired path and speed.

As shown in fig. 11, the fourth temperature adjustment part 64 is formed in a mesh shape. In this case, as shown in fig. 11 (b), IPA is adsorbed in the space of the mesh due to the capillary phenomenon. Therefore, the IPA liquid film L is easily moved by the fourth temperature adjustment unit 64, and IPA can be more efficiently discharged from the surface of the wafer W.

As shown in fig. 12 (a), the fourth temperature adjustment portion 64 may be constituted by one or a plurality of rod-shaped bodies. The rod-shaped body may be linear, curved, or serpentine. When the fourth temperature adjustment portion 64 is formed of a plurality of rod-shaped bodies, the plurality of rod-shaped bodies may be arranged substantially in parallel and may be moved in the direction of the arrangement. Even in the case where the fourth temperature adjustment portion 64 is formed of a plurality of rod-shaped bodies, IPA is adsorbed in the space of the mesh due to the capillary phenomenon. Therefore, the IPA liquid film L is easily moved by the fourth temperature adjustment unit 64, and IPA can be more efficiently discharged from the surface of the wafer W.

As shown in fig. 12 (b), the fourth temperature adjustment unit 64 may be formed of a plate-like body. The plate-like body may be flat or may have the same shape as the wafer W. The lower surface of the plate-like body facing the surface of the wafer W may have a concave-convex shape. Even when the lower surface of the plate-like body has irregularities, IPA is adsorbed in the space of the mesh due to the capillary phenomenon. Therefore, the IPA liquid film L is easily moved by the fourth temperature adjustment unit 64, and therefore IPA can be more efficiently discharged from the surface of the wafer W.

Although not shown, the fourth temperature adjustment portion 64 may have a shape other than the above-described shape such as a ring shape. The fourth temperature adjustment unit 64 may be linearly movable above the wafer W, or may be rotated above the wafer W by rotating around a predetermined vertical axis.

The plurality of patterns W1 formed on the surface of the wafer W may be regularly arranged in a predetermined direction. For example, as shown in fig. 13, when each of the plurality of patterns W1 has a substantially rectangular parallelepiped shape when viewed from above, each of the plurality of patterns W1 may extend in a predetermined direction (the left-right direction in fig. 13). In this case, a temperature gradient may be formed on the surface of the wafer W such that the drying target region a1 moves toward the unprocessed region a2 along the shape of the pattern W1. For example, when the temperature adjustment portion 60 includes the first temperature adjustment portion 61 and the second temperature adjustment portion 62 of the first embodiment, the second temperature adjustment portion 62 may move along the shape of the pattern W1, may move along the longitudinal direction of the pattern W1, or may move along the lateral direction of the pattern W1. When IPA moves along the shape of the pattern W1, the discharge of IPA is not easily hindered by the pattern W1. Therefore, even if the pattern W1 is formed on the front surface of the wafer W, the IPA is smoothly moved, and the pattern W1 can be prevented from being damaged when the IPA is discharged from the front surface of the wafer W.

In order to form a temperature gradient on the surface of the wafer W such that the drying target region a1 moves toward the unprocessed region a2 along the shape of the pattern W1, the substrate processing apparatus 10 may further include an acquiring unit configured to acquire the shape of the pattern W1. The acquisition unit may include an imaging unit configured to image the surface of the wafer W, and a processing unit configured to perform image processing on the image of the surface of the wafer W imaged by the imaging unit to determine the shape of the pattern W1. When the wafer W has a notch and the directivity of the pattern W1 is predetermined with respect to the notch, the acquiring unit may be configured to acquire the position of the notch. The notch may be a notch (a U-shaped or V-shaped groove), or may be a linear portion (a so-called positioning plane) extending linearly. For example, the controller 18 may be configured to determine a discharge direction in which IPA is discharged from the front surface of the wafer W based on the shape of the pattern W1 acquired by the acquisition unit. In this case, a temperature gradient is formed on the surface of the wafer W so that the IPA liquid film L moves from the drying target region a1 to the untreated region a2 in the determined discharge direction. Therefore, the IPA discharge direction can be automatically determined according to the shape of the pattern W1.

The substrate processing apparatus 10 may further include a surrounding member configured to surround the wafer W by being disposed close to the periphery of the wafer W. The upper surface of the surrounding member may be located at a height position substantially equal to the surface of the wafer W and extend in the horizontal direction. The upper surface of the surrounding member may be an inclined surface inclined downward from the inner peripheral edge to the outer peripheral edge at a height position substantially equal to the surface of the wafer W. The surrounding member may be set to a temperature lower than that of the wafer W. The substrate processing apparatus 10 may further include a gas supply portion configured to blow a gas set to a temperature lower than the temperature of the wafer W toward the upper surface of the surrounding member.

In any of the above examples, the wafer W may be inclined in the moving direction of the IPA (the moving direction of the drying target region a 1) to facilitate the movement of the IPA.

[ exemplary ]

Example 1: in one exemplary embodiment, a substrate processing apparatus includes: a substrate holding section for holding a substrate; a drying liquid supply unit configured to supply a drying liquid to the surface of the substrate held by the substrate holding unit; a temperature adjustment unit that changes the surface temperature of the substrate; and a control unit for controlling the temperature adjustment unit. The control unit controls the temperature adjustment unit so that a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate. As described above, when a temperature difference occurs in the liquid film of the drying liquid supplied to the surface of the substrate, marangoni convection is caused in the region of the liquid film where the temperature difference occurs, and the drying liquid moves by the marangoni convection. Therefore, the drying liquid can be discharged from the substrate surface by the movement of the drying liquid. With this configuration, the influence on the pattern on the substrate surface can be reduced as compared with a case where the drying liquid is discharged from the substrate surface by an external force, and the pattern can be prevented from being broken when the drying liquid is removed from the substrate surface.

Example 2: in the apparatus of example 1, the surface of the substrate may include a drying target region to be dried and an untreated region to which drying is not performed, and the control unit may control the temperature adjustment unit so that a temperature difference is generated between the drying target region and the untreated region. In this case, marangoni convection occurs in a region between the drying target region and the untreated region in the liquid film, and the drying liquid moves by the marangoni convection. Therefore, the drying liquid can be discharged from the substrate surface by the movement of the drying liquid.

Example 3: in the apparatus of example 2, the temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate heating unit may be configured to change a heating position on the surface of the substrate by moving the linear heat source along the surface of the substrate. By using a substrate heating unit that moves a linear heat source along the surface of the substrate, the region where marangoni convection occurs can be finely controlled, and the drying liquid can be appropriately removed.

Example 4: in the apparatus of example 2 or 3, the temperature adjusting unit may include a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate cooling unit may be configured to cool the entire surface of the substrate. In the case where the entire surface of the substrate is cooled by the substrate cooling unit, the substrate heating unit can be used to form a temperature gradient in a region where marangoni convection occurs while maintaining the entire substrate at a predetermined temperature, and thus the drying liquid can be appropriately removed.

Example 5: in the apparatus of example 3, the substrate cooling unit may be configured to cool the substrate by a linear cooling source in parallel with the substrate heating unit along the surface of the substrate. In the case of the above-described aspect, the substrate cooling unit and the substrate cooling unit can be combined to form a temperature gradient in a desired region where the marangoni convection is generated, and therefore, the drying liquid can be appropriately removed.

Example 6: in any of examples 2 to 5, the control unit may be configured to: the temperature adjustment unit is controlled to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the untreated region. By forming a temperature gradient on the surface of the substrate so that the liquid film moves from the region to be dried to another region, the movement of the drying liquid due to the temperature gradient formed on the surface of the substrate becomes smooth, and it is possible to prevent the pattern from being damaged when the drying liquid is removed from the surface of the substrate.

Example 7: in the apparatus of example 6, the pattern having a predetermined shape may be formed on the surface of the substrate, and the control unit may control the temperature adjustment unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region along the shape of the pattern. In this case, since the drying liquid moves along the shape of the pattern, the discharge of the drying liquid is not easily hindered by the pattern. Therefore, even if a pattern is formed on the surface of the substrate, the movement of the drying liquid becomes smooth, and the pattern can be prevented from being damaged when the drying liquid is discharged from the surface of the substrate.

Example 8: in the apparatus of example 2, the following method can be adopted: the temperature adjusting unit includes a substrate heating unit that heats a part of the surface of the substrate, and the control unit increases the heating amount of the heating unit with the passage of time for forming a temperature gradient on the surface of the substrate. By using such a substrate heating unit, a temperature gradient can be formed in a desired region where marangoni convection occurs, and therefore, the drying liquid can be appropriately removed.

Example 9: in the apparatus of example 1, the temperature adjustment part may include a low temperature member whose temperature is set to be lower than the substrate, and the control part controls the temperature adjustment part to move the low temperature member along the surface of the substrate above the substrate in a state where the low temperature member is in contact with the liquid film. In this case, the temperature of the portion of the liquid film in contact with the low-temperature member is lower than the temperature of the portion of the liquid film in contact with the substrate, and the surface tension is relatively increased (marangoni phenomenon). Thus, the liquid film is drawn toward the low temperature member. Thus, by moving the low temperature member along the surface of the substrate, the liquid film also moves along the surface of the substrate with the low temperature member. As a result, it is possible to appropriately control the moving direction and moving speed of the low-temperature member, and discharge the drying liquid from the substrate surface at a desired path and speed.

Example 10: in any of the apparatuses of examples 1 to 9, the substrate holding portion may be configured to be capable of tilting the substrate. By configuring the substrate to be able to be inclined, the movement of the drying liquid by the marangoni convection can be promoted, and therefore, the speed of removing the drying liquid can be accelerated.

Example 11: in the apparatus of example 2, the temperature adjustment unit may be configured as follows: the substrate heating apparatus includes a substrate cooling unit for cooling the entire surface of a substrate and a substrate heating unit for heating a region including the center of the substrate. The region including the center of the substrate is heated by the substrate heating unit while the entire surface of the substrate is cooled by the substrate cooling unit, whereby a temperature gradient spreading in a ring shape from the region including the center of the substrate can be formed. Therefore, the drying liquid can be moved toward the outer peripheral direction of the substrate by marangoni convection, and thus the drying liquid can be appropriately removed.

Example 12: in the substrate processing apparatus of example 2, the temperature adjusting unit may be configured to include a substrate heating unit that forms the following temperature gradient: the heating temperature of the region including the center of the substrate is the highest, and the heating temperature becomes lower as going to the outer periphery. By using the substrate heating unit described above, a temperature gradient spreading in a ring shape from a region including the center of the substrate can be formed. Therefore, the drying liquid can be moved toward the outer peripheral direction of the substrate by the marangoni convection, and the drying liquid can be appropriately removed.

Example 13: in other exemplary embodiments, a substrate processing method includes the steps of: supplying a drying liquid to the surface of the substrate held by the substrate holding portion; and discharging the drying liquid from the surface of the substrate by generating a temperature difference in a liquid film of the drying liquid. In this case, the same effects as in example 1 are obtained.

Example 14: in the method of example 13, the step of discharging the drying liquid may include: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the non-treatment region. In this way, since the movement of the liquid film of the drying liquid can be finely controlled by the temperature gradient, the drying liquid can be appropriately removed.

Example 15: in the method of example 14, the step of forming a pattern having a predetermined shape on the surface of the substrate and discharging the drying liquid may include: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the non-treatment region along the shape of the pattern. In this case, the same operational effects as in example 7 are obtained.

Example 16: the method of example 15 may further include: determining a discharge direction of the drying liquid by obtaining a shape of the pattern, the discharging the drying liquid including: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the untreated region in the determined discharge direction. In this case, the discharge direction of the drying liquid can be automatically set according to the shape of the pattern.

Example 17: in any of the methods in examples 14 to 16, the step of discharging the drying liquid may include: the liquid film of the drying liquid is moved by moving the heating position from one side to the other side of the peripheral edge portion of the substrate. In this way, the drying liquid can be discharged by moving the heating position from one side to the other side of the peripheral edge portion of the substrate. Therefore, the drying liquid can be appropriately removed.

Example 18: in another exemplary embodiment, a computer-readable storage medium may store a program for causing an apparatus to execute any of the methods in examples 13 to 17. In this case, the same effects as those of the substrate processing method described above are obtained. In this specification, a storage medium readable by a computer includes a non-transitory tangible medium (non-transitory computer recording medium) (e.g., various main storage devices or auxiliary storage devices), a propagated signal (transitory computer recording medium) (e.g., a data signal that can be provided via a network).

Claims

1. A substrate processing apparatus, comprising:

a substrate holding section for holding a substrate;

a drying liquid supply unit configured to supply a drying liquid to the surface of the substrate held by the substrate holding unit;

a temperature adjustment unit that changes the surface temperature of the substrate; and

a control unit for controlling the temperature adjustment unit,

wherein the controller controls the temperature adjuster to generate a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate.

2. The substrate processing apparatus according to claim 1,

the surface of the substrate includes a drying target region that is a target to be subjected to a drying process and an untreated region that is not subjected to the drying process,

the control unit controls the temperature adjustment unit so that a temperature difference is generated between the drying target region and the unprocessed region.

3. The substrate processing apparatus according to claim 2,

the temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate,

the substrate heating unit changes a heating position on the surface of the substrate by moving a linear heat source along the surface of the substrate.

4. The substrate processing apparatus according to claim 2,

the substrate cooling unit cools the entire surface of the substrate.

5. The substrate processing apparatus according to claim 3,

the substrate cooling unit cools the entire surface of the substrate.

6. The substrate processing apparatus according to claim 3,

the substrate cooling section cools the substrate by a linear cooling source along the surface of the substrate in parallel with the substrate heating section.

7. The substrate processing apparatus according to any one of claims 2 to 6,

the controller controls the temperature adjuster to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the non-treatment region.

8. The substrate processing apparatus according to claim 7,

a pattern having a predetermined shape is formed on the surface of the substrate,

the controller controls the temperature adjuster to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the untreated region along the shape of the pattern.

9. The substrate processing apparatus according to claim 2,

the temperature adjustment unit includes a substrate heating unit that heats a part of a surface of a substrate, and the control unit increases a heating amount of the heating unit with an elapse of time for forming a temperature gradient on the surface of the substrate.

10. The substrate processing apparatus according to claim 1,

the temperature adjustment part includes a low temperature member whose temperature is set to be lower than the substrate temperature,

the control part controls the temperature adjustment part to move the low temperature member along the surface of the substrate above the substrate in a state where the low temperature member is in contact with the liquid film.

11. The substrate processing apparatus according to any one of claims 1 to 6 and 8 to 10,

the substrate holding portion can tilt the substrate.

12. The substrate processing apparatus according to claim 2,

the temperature adjustment unit includes a substrate cooling unit that cools the entire surface of the substrate, and a substrate heating unit that heats a region including the center of the substrate.

13. The substrate processing apparatus according to claim 2,

the temperature adjustment unit includes a substrate heating unit capable of forming the following temperature gradient: the heating temperature of the region including the center of the substrate is the highest, and the heating temperature becomes lower as going to the outer periphery.

14. A substrate processing method includes the steps of:

supplying a drying liquid to the surface of the substrate held by the substrate holding portion; and

and discharging the drying liquid from the surface of the substrate by generating a temperature difference in a liquid film of the drying liquid.

15. The substrate processing method according to claim 14,

the surface of the substrate on which the liquid film is formed includes a drying target region to be dried and an untreated region not to be dried,

the step of discharging the drying liquid includes: forming a temperature gradient on the surface of the substrate to move the liquid film from the drying target region to the non-treatment region.

16. The substrate processing method according to claim 15,

the step of discharging the drying liquid includes: forming a temperature gradient on the surface of the substrate to move the liquid film from the drying object region to the non-treatment region along the shape of the pattern.

17. The substrate processing method according to claim 16,

further comprises the following steps: determining a discharge direction of the drying liquid by obtaining a shape of the pattern,

the step of discharging the drying liquid includes: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the non-treatment region in the determined discharge direction.

18. The substrate processing method according to any one of claims 15 to 17,

the step of discharging the drying liquid includes: the liquid film of the drying liquid is moved by moving the heating position from one side to the other side of the peripheral edge portion of the substrate.

19. A storage medium readable by a computer, having recorded thereon a program for causing an apparatus to execute the method according to any one of claims 14 to 17.