TW202025272A - Substrate processing device, substrate processing method, and storage medium - Google Patents
Substrate processing device, substrate processing method, and storage medium Download PDFInfo
- Publication number
- TW202025272A TW202025272A TW108136801A TW108136801A TW202025272A TW 202025272 A TW202025272 A TW 202025272A TW 108136801 A TW108136801 A TW 108136801A TW 108136801 A TW108136801 A TW 108136801A TW 202025272 A TW202025272 A TW 202025272A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- temperature
- wafer
- drying
- temperature adjustment
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 249
- 238000012545 processing Methods 0.000 title claims abstract description 105
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000003860 storage Methods 0.000 title description 3
- 239000007788 liquid Substances 0.000 claims abstract description 260
- 238000001035 drying Methods 0.000 claims abstract description 143
- 238000010438 heat treatment Methods 0.000 claims description 73
- 238000001816 cooling Methods 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 238000007599 discharging Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 645
- 238000000034 method Methods 0.000 description 31
- 238000010586 diagram Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 19
- 239000008367 deionised water Substances 0.000 description 17
- 229910021641 deionized water Inorganic materials 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 230000002776 aggregation Effects 0.000 description 16
- 238000004220 aggregation Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 238000012546 transfer Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 8
- 238000011084 recovery Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明係關於基板處理裝置、基板處理方法及記錄媒體。The present invention relates to a substrate processing apparatus, a substrate processing method, and a recording medium.
洗淨處理後基板之乾燥方法，如有以下方法：對基板的表面供給乾燥液，並將沖洗液等置換成乾燥液之後，再將乾燥液予以去除(參考專利文獻1)。 [先前技術文獻] [專利文獻]The method of drying the substrate after the cleaning treatment includes the following method: supplying a drying liquid to the surface of the substrate, replacing the rinse liquid with the drying liquid, and then removing the drying liquid (refer to Patent Document 1). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2014－90015號公報[Patent Document 1] JP 2014-90015 A
[發明欲解決之問題][Problem to be solved by invention]
本發明提供一種技術，其可防止從基板的表面去除乾燥液時之圖案破損。 [解決問題之方法]The present invention provides a technique which can prevent pattern damage when the drying liquid is removed from the surface of the substrate. [Solving the problem]
本發明的一態樣之基板處理裝置，包含：基板保持部，保持基板；乾燥液供給部，對於藉由基板保持部所保持之基板的表面，供給乾燥液；溫度調整部，使基板的表面溫度改變；及控制部，控制溫度調整部。控制部控制溫度調整部，俾使供給至基板的表面的乾燥液的液膜產生溫差。 [發明效果]A substrate processing apparatus according to one aspect of the present invention includes: a substrate holding portion that holds a substrate; a drying liquid supply portion that supplies a drying liquid to the surface of the substrate held by the substrate holding portion; and a temperature adjustment portion that makes the surface of the substrate The temperature changes; and the control unit, which controls the temperature adjustment unit. The control unit controls the temperature adjustment unit so as to generate a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate. [Invention Effect]
依據一例示的實施形態，可防止從基板的表面去除乾燥液時之圖案破損。According to an exemplary embodiment, it is possible to prevent pattern damage when the drying liquid is removed from the surface of the substrate.
以下，參考圖式，詳細說明各種例示的實施形態。又，各圖式中，對於相同或相當的部分賦予相同符號。Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each drawing, the same or corresponding parts are given the same reference numerals.
＜第1實施形態＞ [基板處理系統的構成] 圖1係第1實施形態之基板處理系統的概略構成圖。以下，為了使位置關係明確，規定彼此正交之X軸、Y軸及Z軸，並以Z軸正方向作為鉛直朝上方向。<The first embodiment> [Configuration of Substrate Processing System] Fig. 1 is a schematic configuration diagram of a substrate processing system according to the first embodiment. Hereinafter, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is regarded as the vertical upward direction.
如圖1所示，基板處理系統1具備搬出入站2及處理站3。搬出入站2與處理站3係相鄰設置。As shown in FIG. 1, the
搬出入站2具備載體載置部11及搬運部12。於載體載置部11載置有複數之載體C，該複數之載體C以水平狀態收容複數片基板，於本實施形態中係半導體晶圓(以下稱晶圓W)。The carry-in/
搬運部12係與載體載置部11相鄰設置，於內部具備基板搬運裝置13及傳遞部14。基板搬運裝置13具備保持晶圓W之晶圓保持機構。又，基板搬運裝置13能進行往水平方向和鉛直方向的移動、及以垂直軸為中心的迴旋，並使用晶圓保持機構，於載體C與傳遞部14之間進行晶圓W的搬運。The
處理站3與搬運部12係相鄰設置。處理站3具備搬運部15及複數之處理單元16。複數之處理單元16係排列設置於搬運部15的兩側。The
搬運部15，於內部具備基板搬運裝置17。基板搬運裝置17具備保持晶圓W之晶圓保持機構。又，基板搬運裝置17能進行往水平方向和鉛直方向的移動、及以垂直軸為中心的迴旋，並使用晶圓保持機構，於傳遞部14與處理單元16之間進行晶圓W的搬運。The
處理單元16，依照後述控制裝置4的控制部18的控制，對於由基板搬運裝置17所搬運之晶圓W，進行既定的基板處理。The
又，基板處理系統1具備控制裝置4。控制裝置4如為電腦，具備控制部18及記憶部19。於記憶部19，儲存有用以控制基板處理系統1中所執行的各種處理之程式。控制部18，藉由讀取並執行記憶於記憶部19之程式而控制基板處理系統1的動作。In addition, the
又，該程式係記錄於電腦可讀取之記錄媒體，亦可從該記錄媒體安裝至控制裝置4的記憶部19。電腦可讀取之記錄媒體，如為硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。In addition, the program is recorded in a computer-readable recording medium, and can also be installed from the recording medium to the
於如上述所構成之基板處理系統1中，首先，搬出入站2的基板搬運裝置13，從載置於載體載置部11之載體C取出晶圓W，再將所取出的晶圓W載置於傳遞部14。載置於傳遞部14之晶圓W，係藉由處理站3的基板搬運裝置17從傳遞部14取出，並搬入至處理單元16。In the
將搬入至處理單元16的晶圓W，藉由處理單元16加以處理之後，藉由基板搬運裝置17從處理單元16搬出，而載置於傳遞部14。接著，將載置於傳遞部14之已處理完畢的晶圓W，藉由基板搬運裝置13而返回至載體載置部11的載體C。The wafer W carried in the
[基板處理裝置的構成]
參考圖2，說明基板處理系統1所含之基板處理裝置10的構成。基板處理裝置10係包含於基板處理系統1之處理單元16。[Configuration of Substrate Processing Equipment]
2, the structure of the
如圖2所示，基板處理裝置10具備：處理室20、基板保持機構30、處理液供給部40、回收杯50及溫度調整部60。As shown in FIG. 2, the
處理室20係用以收容基板保持機構30、處理液供給部40及回收杯50。於處理室20的頂棚部，設有FFU(Fan Filter Unit：風機過濾機組)21。FFU21具有於處理室20內形成降流的功能。FFU21藉由將從降流氣體供給管(未圖示)所供給的降流氣體供給至處理室20內而形成降流氣體。The
基板保持機構30具有可旋轉地保持晶圓W的功能。基板保持機構30具備：保持部31、支柱部32及驅動部33。保持部31水平地保持晶圓W。支柱部32係於鉛直方向延伸的構件，其基端部由驅動部33可旋轉地支撐著，而並於其前端部水平地支撐保持部31。驅動部33，使支柱部32繞著垂直軸旋轉。該基板保持機構30藉由利用驅動部33使支柱部32旋轉，而使由支柱部32所支撐的保持部31旋轉，藉此，使保持部31所保持的晶圓W旋轉。The
處理液供給部40，係對晶圓W供給處理液。處理液供給部40連接於處理液供給源80。處理液供給部40，具有用以供給來自處理液供給源80的處理液之噴嘴41。處理液供給源80具有複數處理液之供給源，依照晶圓W處理的進行，變更所供給的處理液。又，噴嘴41係設於能於橫向(水平方向)旋轉的噴嘴臂(未圖示)之前頭部分。如此，可一面藉由噴嘴臂的旋轉移動來變更噴嘴的41的前端的位置，一面將處理液供給至晶圓W上。The processing
設有化學液供給源81、DIW供給源82及IPA供給源83，以作為處理液供給源80。化學液供給源81，供給用於晶圓W表面處理之1種或複數種化學液。又，DIW供給源82，供給用於晶圓W表面的沖洗處理之DIW(Deionized Water：純水)。又，IPA供給源83，供給用以將晶圓W表面的DIW置換成IPA(Isopropyl Alcohol：異丙醇)之IPA。IPA係具有揮發性之乾燥液的一種，其表面張力小於DIW。因此，藉由先將晶圓W表面的DIW置換成IPA後，再去除IPA使晶圓W乾燥，可防止於晶圓W之乾燥時之晶圓W表面圖案的破損。化學液供給源81、DIW供給源82及IPA供給源83，各自透過閥V1、V2、V3而與噴嘴41連接。藉由切換閥V1、V2、V3的開閉，可變更從噴嘴41對晶圓W所供給的處理液。A chemical
又，圖2中，係顯示1個噴嘴41，但可對應複數種之處理液而個別設置複數之噴嘴，亦可於一部分的處理液中共用1個噴嘴。In addition, in FIG. 2, one
上述噴嘴41之移動、及來自處理液供給源80的各供給源的液體之供給/停止等，由已述控制部18所控制。The movement of the
回收杯50以圍住保持部31的方式配置，並捕集因保持部31的旋轉而從晶圓W飛散的處理液。於回收杯50的底部，形成有排出液口51，回收杯50所捕集的處理液從該排出液口51往處理單元16的外部排出。又，於回收杯50的底部，形成有將從FFU21所供給的氣體往處理單元16外部排出之排氣口52。The
溫度調整部60，具有進行保持部31上所保持之晶圓W的表面溫度控制之功能。於圖2所示的基板處理裝置10中，溫度調整部60具有：第1溫度調整部61，於保持部31的背面側進行晶圓W全面的溫度控制；及線狀第2溫度調整部62，設於晶圓W的表面側。藉由第1溫度調整部61及第2溫度調整部62各自進行加熱或冷卻，而控制晶圓W表面的溫度分布。亦即，第1溫度調整部61及第2溫度調整部62，具有作為基板加熱部或基板冷卻部的功能。The
第1溫度調整部61設於晶圓W的背面側，進行晶圓W整體的溫度控制。然而，第1溫度調整部61雖整面地進行晶圓W的溫度控制，但亦可構成為對於晶圓W非以一律的溫度進行加熱或冷卻，使晶圓W的表面的溫度分布具有偏差。例如，亦可設為如下構成：將第1溫度調整部61劃分成複數區域，並對各劃分進行獨立的溫度控制亦即進行所謂多通道控制，藉此，以相異的加熱溫度加熱晶圓W的相異位置。又，亦可為藉由利用多通道控制，使晶圓W的表面溫度具有既定的梯度。於以第1溫度調整部61加熱晶圓W的情形時，可使用熱板作為第1溫度調整部61。又，於以第1溫度調整部61冷卻晶圓W的情形時，可使用冷卻板作為第1溫度調整部61。但是，第1溫度調整部61的構成不限於此等。The first
第2溫度調整部62，係對於晶圓W表面以既定距離分隔且於橫向(水平方向)延伸的線型熱源或冷卻源(參考圖4(a))。圖2中，係顯示將第2溫度調整部62的長邊方向配置成Y軸方向的狀態。又，第2溫度調整部62，設為可於橫向(水平方向)且與第2溫度調整部62的長邊方向交叉的方向(例如，正交的方向)移動。圖2所示的第2溫度調整部62，藉由沿著X軸方向移動，能移動通過所有俯視觀察下與保持部31上的晶圓W表面重疊的區域。藉由設為如此構成，可進行晶圓W的特定區域(靠近第2溫度調整部62的區域)的加熱或冷卻。於以第2溫度調整部62加熱晶圓W的情形時，可使用雷射或燈作為第2溫度調整部62。又，於以第2溫度調整部62冷卻晶圓W的情形時，可使用氣流(已冷卻的氣體)作為第2溫度調整部62。但是，第2溫度調整部62的構成不限於此等。The second
上述利用第1溫度調整部61及第2溫度調整部62所為的加熱溫度或冷卻溫度之調整、及第2溫度調整部62之移動等，由已述控制部18所控制。The adjustment of the heating temperature or the cooling temperature by the first
[基板處理方法]
參考圖3，說明使用上述基板處理裝置10所實施之液體處理的內容。[Substrate processing method]
With reference to FIG. 3, the content of the liquid processing performed using the above-mentioned
首先，當將藉由基板搬運裝置17搬入至處理單元16內的晶圓W保持於基板保持機構30的保持部31時，使噴嘴41移動至晶圓W上的處理位置。接著，藉由使晶圓W以既定轉速旋轉並從噴嘴41進行化學液之供給，而進行化學液體處理(S01)。此時，圖2所示的支柱部32或驅動部33，相當於使保持部31所保持的晶圓W旋轉之旋轉機構。First, when the wafer W carried into the
其次，進行將從噴嘴41所供給之處理液切換成DIW並洗淨之沖洗洗淨處理(S02)。具體而言，於使晶圓W旋轉的狀態下，對存在有化學液的液膜之晶圓W供給DIW。藉由供給DIW，將附著於晶圓W的殘留物被DIW沖走。Next, a rinsing and cleaning process of switching the processing liquid supplied from the
以既定時間執行沖洗洗淨處理之後，停止從噴嘴41供給DIW。其次，藉由從噴嘴41對旋轉中的晶圓W表面供給IPA，而進行將晶圓W表面的DIW置換成IPA之置換處理(S03：乾燥液供給步驟)。因將IPA供給至晶圓W表面，故於晶圓W表面形成IPA的液膜。藉此，可將殘留於晶圓W表面的DIW置換成IPA。After the flushing and washing process is executed for a predetermined time, the supply of DIW from the
當將晶圓W表面的DIW充分置換成IPA之後，則停止對晶圓W供給IPA。接著，進行將殘留於晶圓W表面的IPA從晶圓W表面排出之排出處理(S04：排出步驟)。藉由將IPA從晶圓W表面排出，而成為晶圓W表面為乾燥的狀態。又，於基板處理裝置10中，藉由利用溫度調整部60使晶圓W表面的溫度產生偏差，而促進IPA從晶圓W的表面的排出。此點將於後述。After the DIW on the surface of the wafer W is sufficiently replaced with IPA, the supply of IPA to the wafer W is stopped. Next, a discharge process of discharging the IPA remaining on the surface of the wafer W from the surface of the wafer W is performed (S04: discharge step). When the IPA is discharged from the surface of the wafer W, the surface of the wafer W is in a dry state. In addition, in the
當晶圓W的表面被乾燥，對於該晶圓W之液體處理則為結束。以與搬入時相反的順序，將晶圓W從基板處理裝置10搬出。When the surface of the wafer W is dried, the liquid processing of the wafer W is finished. The wafer W is carried out from the
[排出處理]
參考圖4(a)～圖4(c)，說明使用溫度調整部60之IPA的排出處理。圖4(a)係用以說明配置於晶圓W表面上之第2溫度調整部62的動作之立體圖。又，圖4(b)係利用第1溫度調整部61及第2溫度調整部62所為之晶圓W的溫度控制之說明圖。如圖4(b)所示，於晶圓W表面形成有既定的圖案W1(例如，光阻圖案)。又，圖4(c)係晶圓W表面的溫度之說明圖。[Discharge processing]
4(a) to 4(c), the discharge process of IPA using the
於進行IPA的排出處理之前，以覆蓋晶圓W表面的方式，形成IPA液膜L。於圖4(a)～圖4(c)所示例中，第1溫度調整部61係用作為使晶圓W背面冷卻至既定溫度之基板冷卻部。藉由第1溫度調整部61，將晶圓W表面冷卻至固定溫度。又，第2溫度調整部62係用作為從晶圓W的表面側加熱晶圓W表面的既定位置之基板加熱部。於進行IPA的排出時，如圖4(b)所示，將第2溫度調整部62配置靠近於晶圓W的端部。如此，藉由第2溫度調整部62，加熱晶圓W端部的表面。Before performing the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. In the example shown in Figs. 4(a) to 4(c), the first
結果，如圖4(c)所示，晶圓W表面的溫度中，第2溫度調整部62所配置靠近側的端部(外周)的溫度T1較其他區域的溫度T2為高。如此，於成為溫度T1之晶圓W端部與成為溫度T2之未處理區A2之間，形成從溫度T1變成溫度T2之乾燥對象區A1。亦即，晶圓W表面包含：乾燥對象區A1及與乾燥對象區A1相鄰之未處理區A2。換言之，IPA液膜L中之靠近乾燥對象區A1之邊緣部La的溫度，較IPA液膜L中之對應於未處理區A2之剩餘部Lb的溫度變高。是故，於邊緣部La與剩餘部Lb之間產生溫差。因此，於乾燥對象區A1中，發生IPA液膜L往溫度低之未處理區A2側的凝聚。As a result, as shown in FIG. 4(c), among the temperatures of the surface of the wafer W, the temperature T1 of the end (outer periphery) on the side where the second
於乾燥對象區A1中，因晶圓W表面的溫度較成為溫度T2之其他區域為高，故可促進IPA從IPA液膜L蒸發(揮發)。結果，於乾燥對象區A1的IPA液膜L的膜厚，變得小於未處理區A2(成為溫度T2的區域)的膜厚。結果，乾燥對象區A1的IPA液膜L與未處理區A2的IPA液膜L之間，產生表面張力差，使得於乾燥對象區A1的IPA液膜L的表面張力相較於未處理區A2變小。結果，產生乾燥對象區A1的IPA液膜L的邊緣部La往未處理區A2側(圖4之右側)拉引之所謂馬蘭哥尼對流。IPA液膜L的邊緣部La藉由此馬蘭哥尼對流所產生之力，而往低溫側移動。In the drying target area A1, since the temperature of the surface of the wafer W is higher than that of the other areas at the temperature T2, the evaporation (volatization) of IPA from the IPA liquid film L can be promoted. As a result, the film thickness of the IPA liquid film L in the drying target area A1 becomes smaller than the film thickness of the untreated area A2 (the area at the temperature T2). As a result, there is a difference in surface tension between the IPA liquid film L in the drying target area A1 and the IPA liquid film L in the untreated area A2, so that the surface tension of the IPA liquid film L in the drying target area A1 is compared with that of the untreated area A2. Become smaller. As a result, the edge La of the IPA liquid film L in the drying target area A1 draws so-called Marangoni convection toward the untreated area A2 side (the right side in FIG. 4). The edge La of the IPA liquid film L moves to the low temperature side by the force generated by the Marangoni convection.
此時，如圖4(b)所示，若使第2溫度調整部62往箭頭S方向移動，則乾燥對象區A1從圖4(c)所示位置往箭頭S方向移動。藉由對應於IPA液膜L的凝聚速度(IPA液膜L的邊緣部La的移動速度)使第2溫度調整部62移動，可使馬蘭哥尼對流所致之IPA液膜L的凝聚發生，可使晶圓W表面上的IPA往箭頭S方向移動。因此，於沿著箭頭S方向之下游側的晶圓W的端部Wa中，可使IPA從晶圓W的表面排出。At this time, as shown in FIG. 4(b), if the second
於晶圓W的表面中，成為進行IPA液膜L的乾燥處理的對象之區域，係「乾燥對象區A1」。另一方面，於晶圓W的表面中，未進行IPA液膜L的乾燥處理之區域，係「未處理區A2」。於圖4所示之例中，乾燥對象區A1，係於晶圓W的表面中藉由第2溫度調整部62而升溫之區域，亦即，產生從溫度T1往溫度T2變化的溫度梯度之區域。如上所述，於乾燥對象區A1中，藉由馬蘭哥尼對流將IPA液膜L的邊緣部La往未處理區A2側拉引，藉此使IPA液膜L的端部移動。因此，藉由控制乾燥對象區A1的位置，使於乾燥對象區與除此外的區域之間，在晶圓W表面形成溫度梯度，可使晶圓W表面上的IPA的凝聚發生。On the surface of the wafer W, the area to be the target of the drying process of the IPA liquid film L is the "drying target area A1". On the other hand, on the surface of the wafer W, the area where the drying process of the IPA liquid film L has not been performed is the "unprocessed area A2". In the example shown in FIG. 4, the drying target area A1 is the area on the surface of the wafer W that is raised by the second
[作用・效果]
如此，於基板處理裝置10中，利用溫度調整部60所為之晶圓W表面的溫度控制，於晶圓W表面中，於乾燥對象區A1與未處理區A2之間，形成溫差。具體而言，以IPA液膜L的邊緣部La的溫度變高而IPA液膜L的剩餘部Lb的溫度變低的方式，使IPA液膜L產生溫差。藉此，於IPA液膜L的邊緣部La中產生馬蘭哥尼對流。因此，一面使IPA往晶圓W的表面中之既定方向(具體而言，溫度成為低溫之側)凝聚，一面從晶圓W表面排出IPA。如此，藉由設為利用馬蘭哥尼對流所致之IPA的凝聚而從晶圓W表面排出IPA之構成，可防止從晶圓W表面去除IPA時之晶圓W表面的圖案崩塌等。[Effect]
In this way, in the
作為從晶圓W表面去除IPA之方法，習知係使用藉由使晶圓W旋轉而利用離心力使IPA往外周側移動之方法。此情形時，晶圓W表面的IPA受到離心力而往外側流動。但是，於如此IPA受到外力而移動的情形時，於IPA液膜的端部，形成液體厚度極薄的邊界層。邊界層因係為無法利用外力而使IPA移動的區域，故僅能藉由IPA的蒸發來進行晶圓W表面的乾燥。此時，IPA的蒸發速度於晶圓W表面無法成為均勻。特別是，於晶圓W的表面因形成有多數的圖案W1，故容易因圖案W1的形狀等而產生IPA液面高度的差異。若於IPA的液面高度不同的狀態持續進行IPA的蒸發，則液面高度所造成的應力差會影響圖案W1，而可能使圖案崩塌等的圖案W1的損壞更加惡化。As a method of removing the IPA from the surface of the wafer W, a conventional method is to use a centrifugal force to move the IPA to the outer peripheral side by rotating the wafer W. In this case, the IPA on the surface of the wafer W receives centrifugal force and flows outward. However, when the IPA is moved by an external force, a boundary layer with an extremely thin liquid thickness is formed at the end of the IPA liquid film. Since the boundary layer is an area where the IPA cannot be moved by external force, the surface of the wafer W can be dried only by the evaporation of the IPA. At this time, the evaporation rate of IPA cannot be made uniform on the surface of the wafer W. In particular, since a large number of patterns W1 are formed on the surface of the wafer W, differences in the IPA liquid level are likely to occur due to the shape of the pattern W1 and the like. If the evaporation of IPA is continued in a state where the liquid level of the IPA is different, the difference in stress caused by the liquid level will affect the pattern W1, which may worsen the damage of the pattern W1 such as pattern collapse.
相對於此，於基板處理裝置10中，如上所述，利用溫度梯度所產生的馬蘭哥尼對流，使晶圓W表面上的IPA凝聚。亦即，於非受到外力所致的移動而是利用表面張力的差使IPA移動的情形時，可防止於IPA液膜L的邊緣部La產生邊界層。亦即，因可去除利用蒸發而進行乾燥的區域，故於去除IPA時，可防止如圖案崩塌等的圖案W1破損。形成於晶圓W表面的圖案W1，近年來因深寬比變高，故發生圖案崩塌的風險變高，但藉由使用利用上述馬蘭哥尼對流之IPA的去除，可降低圖案崩塌的發生率。又，晶圓W表面的溫度梯度不盡然為IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高。又，只要於乾燥對象區與其他區域(未處理區)之間產生期望的溫差即可，亦可未於未處理區A2(未處理區)內形成溫度梯度。In contrast, in the
又，由溫度調整部60所控制之晶圓W的表面溫度，宜控制為不促進IPA揮發的程度。為了使於IPA中產生馬蘭哥尼對流，只要高於常溫(23℃左右)之高溫即可，例如，可控制溫度調整部60以使晶圓W的表面溫度成為30℃以上。若晶圓W的表面溫度變得過高，則相較於IPA的凝聚所致之移動而言，更促進了IPA的揮發，而使得圖案破損的可能性變高。In addition, the surface temperature of the wafer W controlled by the
又，如圖4所示，於基板處理裝置10中，使第2溫度調整部62從晶圓W的一方側的端部往箭頭S方向水平移動，藉此，可使IPA液膜L往箭頭S方向凝聚，使IPA從箭頭S方向的下游側的端部Wa排出。如此，IPA於晶圓W表面中，沿著箭頭S方向移動。為了促進此IPA的移動，亦可使保持部31上的晶圓W稍稍(0.1°～1°左右)傾斜，以使端部Wa成為下方側。作為使保持部31上的晶圓W傾斜的方法，如為使支撐保持部31之支柱部32的位置往橫向移動，而使產生所謂的軸偏離之方法。如此，亦可設為藉由使晶圓W稍稍傾斜而促進從IPA的端部Wa排出之構成。In addition, as shown in FIG. 4, in the
第2溫度調整部62的移動及第1溫度調整部61所致之冷卻溫度等，係藉由控制部18所為之控制而變更。控制部18亦可藉由執行根據IPA的液特性等而事先決定之程式，而控制溫度調整部60的各部。又，控制部18例如亦可進行如下控制：根據基板處理裝置10內所設置之用以觀察晶圓W表面之相機所取得之晶圓W表面的狀態相關之資訊等，進行變更溫度調整部60的各部的動作之控制。The movement of the second
＜第1變形例＞
其次，說明溫度調整部60的變形例。如上所述，若於IPA液膜L的邊緣部La附近，以IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高的方式，形成溫度梯度，則於IPA液膜L的邊緣部La產生馬蘭哥尼對流。藉由使此馬蘭哥尼對流產生，IPA液膜L利用表面張力可以不形成邊界層而產生凝聚。因此，只要能於晶圓W表面形成如上述之溫度梯度，則溫度調整部60的構成可適當變更。<The first modification example>
Next, a modification example of the
圖5(a)～圖5(c)係第1變形例之溫度調整部60A之圖。圖5(a)～圖5(c)係與圖4(a)～圖4(c)對應之圖。溫度調整部60A相較於溫度調整部60，有以下差異點。亦即，於溫度調整部60A中，藉由使設於晶圓W背面側的第1溫度調整部61依照位置使加熱溫度改變，而於晶圓W的表面形成溫度梯度。亦即，未使用第2溫度調整部62。5(a) to 5(c) are diagrams of the
圖5(b)中，以漸變(gradation)顯示第1溫度調整部61所致之各位置的加熱溫度。亦即，藉由第1溫度調整部61控制加熱溫度，使晶圓W的圖示左側的端部Wb的加熱溫度變高，而往圖示右側的端部Wc加熱溫度變低。結果，如圖5(c)所示，晶圓W的表面溫度，從圖示左側的端部Wb往圖示右側的端部Wc整體形成溫度梯度。亦即，於圖5所示例中，於乾燥對象區A1及未處理區A2皆形成溫度梯度。In FIG. 5(b), the heating temperature of each position by the 1st
結果，如圖5(b)所示，IPA液膜L從晶圓W的端部Wb側產生馬蘭哥尼對流，並往端部Wc側移動。晶圓W的表面溫度因整體形成溫度梯度，故即使IPA液膜L的邊緣部La往端部Wc側移動，邊緣部La仍存在於乾燥對象區A1上。因此，可使馬蘭哥尼對流所致之IPA液膜L的凝聚及移動持續進行。亦即，於晶圓W表面整體中所形成的溫度梯度，其功能係作為IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出之端部Wb側)的溫度變高之溫度梯度。結果，IPA液膜L往端部Wc側移動，並從端部Wc側排出。As a result, as shown in FIG. 5(b), the IPA liquid film L generates Marangoni convection from the end Wb side of the wafer W and moves to the end Wc side. Since the surface temperature of the wafer W forms a temperature gradient as a whole, even if the edge portion La of the IPA liquid film L moves to the end portion Wc side, the edge portion La still exists in the drying target area A1. Therefore, the aggregation and movement of the IPA liquid film L caused by Marangoni convection can continue. That is, the temperature gradient formed in the entire surface of the wafer W functions as a lower temperature on the side where the IPA liquid film L exists and the side where the IPA liquid film L does not exist (the side where the end Wb of the wafer W is exposed) The temperature gradient becomes higher. As a result, the IPA liquid film L moves to the end Wc side and is discharged from the end Wc side.
如此，於可在第1溫度調整部61中之相異處分別控制晶圓W的加熱溫度的情形時，即使未使用與第2溫度調整部62的組合，亦可於晶圓W表面的溫度形成梯度。因此，亦可設為使用此溫度梯度而控制IPA液膜L的移動及排出之構成。即使於設為如此構成的情形時，亦可降低圖案崩塌的發生率。In this way, when the heating temperature of the wafer W can be individually controlled at different places in the first
＜第2變形例＞
圖6(a)～圖6(c)係第2變形例之溫度調整部60B之圖。圖6(a)～圖6(c)係與圖4(a)～圖4(c)對應之圖。溫度調整部60B相較於溫度調整部60，有以下差異點。亦即，於溫度調整部60B中，不使用設於晶圓W的背面側之第1溫度調整部61，而改成使用與第2溫度調整部62平行配置之第3溫度調整部63，而於晶圓W的表面形成溫度梯度。亦即，未使用第1溫度調整部61。<The second modification example>
6(a) to 6(c) are diagrams of the
於溫度調整部60B中，與第2溫度調整部62相同，第3溫度調整部63亦可設為於橫向(水平方向)延伸之線型熱源或冷卻源。於溫度調整部60B中，將第2溫度調整部62設為熱源，而將第3溫度調整部63設為冷卻源。接著，如圖6(a)及圖6(b)所示，配置成：第2溫度調整部62與第3溫度調整部63夾著IPA液膜L的邊緣部La而平行延伸，且第3溫度調整部63成為IPA液膜L側。In the
結果，如圖6(c)所示，於第2溫度調整部62與第3溫度調整部63之間，形成乾燥對象區A1。因於IPA液膜L側配置成為冷卻源的第3溫度調整部63，故於乾燥對象區A1中，以IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高的方式，形成溫度梯度。因此，IPA液膜L的邊緣部La往第3溫度調整部63側移動。As a result, as shown in FIG. 6(c), a drying target area A1 is formed between the second
此時，如圖6(b)所示，若對應於邊緣部La的移動，使第2溫度調整部62及第3溫度調整部63往箭頭S方向移動，則乾燥對象區A1從圖6(c)所示位置往箭頭S方向移動。藉由對應IPA液膜L的凝聚速度(IPA液膜L的邊緣部La的移動速度)使第2溫度調整部62及第3溫度調整部63移動，可使邊緣部La中之馬蘭哥尼對流所致之IPA液膜L的凝聚發生。藉此，可使晶圓W表面上的IPA往箭頭S方向移動。因此，於沿著箭頭S方向之下游側的晶圓W的端部Wa，可將IPA從晶圓W的表面排出。At this time, as shown in FIG. 6(b), if the second
如此，即使於將2個線型溫度調整部，亦即第2溫度調整部62及第3溫度調整部63加以組合而形成溫度調整部60B的情形時，亦可於晶圓W表面的溫度設置梯度。因此，亦可設為使用此溫度梯度而控制IPA液膜L的移動及排出之構成。即使於設為如此構成的情形時，亦可降低圖案崩塌的發生率。In this way, even when two linear temperature adjusting parts, that is, the second
＜第2實施形態＞ 其次，說明溫度調整部的第2實施形態。於第1實施形態中，針對利用藉由晶圓W表面的溫度梯度所產生之IPA的馬蘭哥尼對流而促進IPA液膜L往單向(例如，圖4(b)所示之箭頭S方向)移動的情形，加以說明。因此，於第1實施形態中，將IPA從晶圓W的一側的端部(例如，圖4(b)所示之端部Wa)排出。相對於此，於第2實施形態中，針對利用藉由晶圓W表面的溫度梯度所產生之IPA的馬蘭哥尼對流而促進IPA液膜L從晶圓W中心往外周側移動的情形，加以說明。因IPA液膜L的移動方向不同，成為從中心往外周方向，故IPA變成從晶圓W的外周某處排出。<The second embodiment> Next, a second embodiment of the temperature adjustment unit will be described. In the first embodiment, the Marangoni convection of the IPA generated by the temperature gradient on the surface of the wafer W promotes the IPA liquid film L in one direction (for example, the direction of the arrow S shown in FIG. 4(b) ) The situation of movement, explain. Therefore, in the first embodiment, the IPA is discharged from one end of the wafer W (for example, the end Wa shown in FIG. 4(b)). On the other hand, in the second embodiment, the use of the Marangoni convection of the IPA generated by the temperature gradient on the surface of the wafer W to promote the movement of the IPA liquid film L from the center of the wafer W to the outer peripheral side is added. Description. Since the moving direction of the IPA liquid film L is different from the center to the outer periphery, the IPA is discharged from somewhere on the outer periphery of the wafer W.
又，於晶圓W的表面形成溫度梯度之點，與第1實施形態相同。亦即，於IPA液膜L的端部附近，以IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高的方式，形成溫度梯度，而使於IPA液膜L的邊緣部La，產生馬蘭哥尼對流。The point at which a temperature gradient is formed on the surface of the wafer W is the same as in the first embodiment. That is, near the end of the IPA liquid film L, a temperature gradient is formed such that the temperature on the side where the IPA liquid film L is present becomes lower and the temperature on the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) becomes higher. On the edge La of the IPA liquid film L, Marangoni convection is generated.
圖7(a)～圖7(c)及圖8(a)～圖8(c)係第2實施形態之溫度調整部70之圖。圖7(a)～圖7(c)及圖8(a)～圖8(c)分別係與圖4(a)～圖4(c)對應之圖。Figs. 7(a) to 7(c) and Figs. 8(a) to 8(c) are diagrams of the
溫度調整部70具有：設於晶圓W背面側之第1溫度調整部71；及設於晶圓W表面側之第2溫度調整部72。The
第1溫度調整部71具有與溫度調整部60的第1溫度調整部61相同之構成。亦即，第1溫度調整部71設於晶圓W的背面側，並進行晶圓W整體的溫度控制。又，針對第1溫度調整部71，亦可構成為：劃分成複數之區域，並對各劃分進行獨立之溫度控制亦即進行所謂多通道控制，藉此，使晶圓W的表面溫度具有既定的梯度。The first
第2溫度調整部72，係為於晶圓W的包括中心之區域，相對於表面以既定距離分開設置之光點(spot)型的熱源(亦可參考圖7(a))。第2溫度調整部72將晶圓W表面中之包括中心之區域予以加熱。作為第2溫度調整部72，可使用雷射或燈。但是，第2溫度調整部72的構成不限於此等。利用第2溫度調整部72進行加熱之「晶圓W表面之包括中心之區域」，係指包括晶圓W的中心且其直徑小於晶圓W的直徑之區域。晶圓W表面之包括中心之區域的直徑，例如，可設為相對於晶圓W的直徑為30%以下。The second
以下，說明使用溫度調整部70之IPA的排出處理。於進行IPA的排出處理之前，以覆蓋晶圓W表面之方式，形成IPA液膜L。於圖7(a)～圖7(c)所示例中，第1溫度調整部71，係用作為將晶圓W的背面冷卻為既定溫度之基板冷卻部。藉由第1溫度調整部71，將晶圓W表面冷卻成固定溫度。Hereinafter, the discharge process of IPA using the
第2溫度調整部72，係用作為從晶圓W的表面側加熱晶圓W的中央附近之基板加熱部。於進行IPA的排出時，如圖7(b)所示，第2溫度調整部72係配置於晶圓W的中央附近，並對晶圓W中央附近的表面進行加熱。The second
結果，如圖7(c)所示，晶圓W的表面之包括中心之區域的溫度T1，較與第2溫度調整部72分開之外周側的溫度T2為高。因此，於成為溫度T1之晶圓W的包括中心之區域與成為溫度T2之未處理區A2之間，形成從溫度T1往溫度T2變化之乾燥對象區A1。當形成此乾燥對象區A1，則於乾燥對象區A1中，發生IPA液膜L往低溫區域側的凝聚。又，於乾燥對象區A1中，以晶圓W的包括中心之區域的溫度T1為中心，溫度往外周側緩慢變低。As a result, as shown in FIG. 7(c), the temperature T1 of the area including the center of the surface of the wafer W is higher than the temperature T2 on the outer peripheral side separated from the second
於乾燥對象區A1中，產生IPA液膜L的表面張力的差所致之馬蘭哥尼對流。藉由此馬蘭哥尼對流所產生之力，IPA液膜L的邊緣部La(內周緣)往低溫側，亦即晶圓W的外周側移動。In the drying target area A1, Marangoni convection caused by the difference in the surface tension of the IPA liquid film L occurs. Due to the force generated by the Marangoni convection, the edge La (inner peripheral edge) of the IPA liquid film L moves to the low temperature side, that is, the outer peripheral side of the wafer W.
若IPA液膜L的凝聚發生，則如圖8(a)及圖8(b)所示，IPA液膜L的邊緣部La緩慢往外周側移動。另一方面，若持續進行利用第1溫度調整部71所為之晶圓W的冷卻、及利用第2溫度調整部72所為之晶圓W的包括中心之區域的加熱，則IPA液膜L已去除(亦即已乾燥)之晶圓W的包括中心之區域的表面溫度成為固定之溫度T1。另一方面，外周側之IPA液膜L殘留之區域，維持為溫度T2的狀態。結果，如圖8(c)所示，於IPA液膜L的邊緣部La附近，亦即IPA液膜L的膜厚變化之區域，形成環狀的乾燥對象區A1。因此，於IPA液膜L的邊緣部La附近形成馬蘭哥尼對流之同時，邊緣部La往晶圓W的外周側移動。又，伴隨著邊緣部La的移動，乾燥對象區A1亦往外周側移動。如此，藉由持續進行馬蘭哥尼對流所致之IPA液膜L的邊緣部La的移動，可於晶圓W的外周，將IPA從晶圓W的表面排出。When aggregation of the IPA liquid film L occurs, as shown in FIGS. 8(a) and 8(b), the edge La of the IPA liquid film L slowly moves to the outer peripheral side. On the other hand, if the cooling of the wafer W by the first
如此，即使於使用溫度調整部70之情形時，亦可利用晶圓W表面的溫度控制而形成乾燥對象區A1。亦即，於IPA液膜L的邊緣部La附近，以IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高之方式，形成溫度梯度。藉此，使於IPA液膜L的邊緣部La產生馬蘭哥尼對流。結果，可一面使IPA往晶圓W的表面溫度成為低溫之側凝聚，一面從晶圓W表面排出IPA。因此，可防止從晶圓W表面去除IPA時之晶圓W表面的圖案崩塌等。In this way, even when the
又，於溫度調整部70中，亦可隨著IPA液膜L的邊緣部La往外周移動，使第2溫度調整部72所致之晶圓W的包括中心之區域的加熱溫度緩慢變化。亦即，可使第2溫度調整部72所致之加熱溫度改變，以使形成有邊緣部La之區域的晶圓W的表面溫度成為IPA液膜所致之馬蘭哥尼對流容易產生之溫度範圍。此情形時，晶圓W的包括中心之區域的表面溫度會變得高於溫度T1，而於不影響晶圓W的範圍內，可適當變更晶圓W的表面溫度。Furthermore, in the
＜第3變形例＞
其次，說明溫度調整部70的變形例。如上所述，若於IPA液膜L的邊緣部La附近，以IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高的方式，形成溫度梯度，則於IPA液膜L的邊緣部La產生馬蘭哥尼對流。藉由使此馬蘭哥尼對流產生，IPA液膜L利用表面張力可以不形成邊界層而產生凝聚。因此，只要能於晶圓W表面形成如上述之溫度梯度，則溫度調整部70的構成可適當變更。<The third modification example>
Next, a modification example of the
圖9(a)～圖9(c)及圖10(a)～圖10(c)係第3變形例之溫度調整部70A之圖。圖9(a)～圖9(c)及圖10(a)～圖10(c)分別係與圖4(a)～圖4(c)對應之圖。Figs. 9(a) to 9(c) and Figs. 10(a) to 10(c) are diagrams of the
溫度調整部70A相較於溫度調整部70，有以下差異點。亦即，於溫度調整部70A中，藉由使設於晶圓W的背面側之第1溫度調整部71依照位置使加熱溫度改變，而於晶圓W的表面形成溫度梯度。亦即，未使用第2溫度調整部72。The
圖9(b)中，以漸變(gradation)顯示第1溫度調整部71所致之各位置的加熱溫度。亦即，藉由第1溫度調整部71控制控制加熱溫度，使晶圓W的中央附近之加熱溫度變高，而往外周側加熱溫度緩慢變低。結果，如圖9(c)所示，晶圓W的表面溫度成為從晶圓W中央附近往外周的溫度梯度。亦即，於晶圓W全面形成溫度梯度。換言之，於圖9所示例中，於乾燥對象區A1及未處理區A2，皆形成溫度梯度。In FIG. 9(b), the heating temperature of each position by the 1st
於溫度調整部70A，具有氣體噴射部73，氣體噴射部73取代第2溫度調整部72而可對晶圓W表面吹附氣體。氣體噴射部73例如對晶圓W表面吹附氮等之氣體。藉由噴射氣體，可於晶圓W的中央附近的IPA液膜L形成開口。The
以下，說明使用溫度調整部70A之IPA的排出處理。於進行IPA的排出處理之前，以覆蓋晶圓W表面的方式，形成IPA液膜L。如上所述，藉由第1溫度調整部71，使晶圓W的表面溫度從中央附近往外周側緩慢地變低。Hereinafter, the discharge process of IPA using the
在此，藉由氣體噴射部73於晶圓W的中央附近形成IPA液膜L的開口，而使晶圓W中央附近露出。亦即，進行晶圓W的中央附近中之IPA液膜L的乾燥處理。因此，晶圓W的中央附近的區域成為乾燥對象區A1，而乾燥對象區A1的外周側的區域成為未處理區A2。藉此，於晶圓W中央形成IPA液膜L的邊緣部La(內周緣)。當IPA液膜L的邊緣部La形成，則利用於晶圓W全面所形成的溫度梯度，發生IPA液膜L往低溫區域側的凝聚。如上所述，於乾燥對象區A1中，藉由產生IPA液膜L的表面張力的差所致之馬蘭哥尼對流，IPA液膜L的邊緣部La往低溫側，亦即晶圓W的外周側移動。Here, the
若IPA液膜L的凝聚發生，則如圖10(a)及圖10(b)所示，IPA液膜L的邊緣部La緩慢往外周側移動。若持續進行利用第1溫度調整部71所為之晶圓W的加熱，則IPA液膜L已去除(亦即已乾燥)之晶圓W中央附近的表面溫度固定為既定溫度。另一方面，如圖10(c)所示，外周側之IPA液膜L殘留之區域，成為溫度梯度殘留之狀態。因此，於IPA液膜L的邊緣部La附近形成馬蘭哥尼對流之同時，邊緣部La往晶圓W的外周側移動。亦即，伴隨著邊緣部La的移動，環狀的乾燥對象區A1往外周側移動。如此，藉由持續進行馬蘭哥尼對流所致之IPA液膜L的邊緣部La的移動，可於晶圓W的外周，將IPA從晶圓W的表面排出。When aggregation of the IPA liquid film L occurs, as shown in FIGS. 10(a) and 10(b), the edge La of the IPA liquid film L slowly moves to the outer peripheral side. If the heating of the wafer W by the first
如此，即使於使用溫度調整部70A的情形時，亦可利用晶圓W表面的溫度控制而形成乾燥對象區A1。亦即，於IPA液膜L的邊緣部La附近，以IPA液膜L存在側的溫度變低而IPA液膜L不存在側(晶圓W露出側)的溫度變高的方式，形成溫度梯度。藉此，使於IPA液膜L的邊緣部La產生馬蘭哥尼對流。結果，可一面使IPA往晶圓W的表面溫度成為低溫之側凝聚，一面從晶圓W表面排出IPA。因此，可防止從晶圓W表面去除IPA時之晶圓W表面的圖案崩塌等。In this way, even when the
又，於溫度調整部70A中，亦可隨著IPA液膜L的邊緣部La往外周移動，使第1溫度調整部71所致之加熱溫度緩慢改變。亦即，可使第1溫度調整部71所致之加熱溫度改變，以使形成有邊緣部La之區域的晶圓W的表面溫度成為IPA液膜所致之馬蘭哥尼對流容易產生之溫度範圍。Moreover, in the
又，於溫度調整部70A中，藉由第1溫度調整部71控制加熱溫度，以使晶圓W的中央附近中之加熱溫度變高而往外周側加熱溫度緩慢變低。但是，若於IPA液膜L之形成有邊緣部La之區域中可形成乾燥對象區A1，則利用第1溫度調整部71所為之晶圓W的加熱的方法無特別限定。例如，即使為設為將第1溫度調整部71僅配置於晶圓W中央附近而非對應晶圓W全面之形狀之構成時，亦可藉由控制加熱溫度，於晶圓W的表面形成環狀的乾燥對象區A1。因此，可利用乾燥對象區A1，控制IPA液膜L的邊緣部La中之馬蘭哥尼對流的形成及IPA液膜L的移動。In addition, in the
[其他] 本次所揭示之實施形態應視為於所有的點上皆為例示而非限制。上述實施形態於不脫離附加之申請專利範圍及其主旨之情形下，亦可以各種形態進行省略、置換及變更。[other] The implementation forms disclosed this time should be regarded as illustrative rather than restrictive at all points. The above-mentioned embodiments can be omitted, replaced, and changed in various forms without departing from the scope of the appended patent application and the spirit thereof.
例如，於上述實施形態中係針對乾燥液為IPA的情形加以說明，但乾燥液不限於IPA。For example, in the above embodiment, the case where the drying liquid is IPA is explained, but the drying liquid is not limited to IPA.
又，如上述實施形態及變形例中所述，可適當變更用作為基板加熱部或基板冷卻部之溫度調整部的構成及配置。例如，於上述實施形態中，係針對將用以冷卻晶圓W全面之第1溫度調整部61、71設於晶圓W的背面側(保持部31側)的情形加以說明，但亦可設於晶圓W的表面側。In addition, as described in the above-mentioned embodiment and modification examples, the configuration and arrangement of the temperature adjustment section used as the substrate heating section or the substrate cooling section can be appropriately changed. For example, in the above-mentioned embodiment, the case where the first
不僅使從上方觀察時之晶圓W表面的相異區域(乾燥對象區A1及未處理區A2)產生溫差，亦可於上下方向(IPA液膜L的高度方向)使IPA液膜L產生溫差。例如，如圖11及圖12所示，溫度調整部60亦可包含：配置於晶圓W背面側之第1溫度調整部61；及配置於晶圓W表面側之第4溫度調整部64(低溫構件)。第4溫度調整部64構成為於晶圓W的上方沿著晶圓W表面移動。第4溫度調整部64，亦可設定成較用以加熱晶圓W之第1溫度調整部61的溫度為低之溫度。亦即，第4溫度調整部64，亦可設定成較藉由第1溫度調整部61加熱之晶圓W的溫度為低之溫度。藉此，於IPA液膜L中之與第4溫度調整部64接觸之上部及與IPA液膜L中之與晶圓W接觸之下部之間，產生溫差，且作用於該上部之表面張力相對變大(馬蘭哥尼現象)。故IPA液膜L被拉往第4溫度調整部64。因此，藉由控制部18控制第4溫度調整部64的動作，使第4溫度調整部64沿著晶圓W表面移動(圖11及圖12的箭頭S參考)，使IPA液膜L亦受第4溫度調整部64影響而沿著晶圓W表面移動。結果，控制部18可一面適當地控制第4溫度調整部64的移動方向及移動速度，一面從晶圓W表面以期望的路徑及速度排出IPA。It not only produces a temperature difference in the different areas on the surface of the wafer W (the drying target area A1 and the unprocessed area A2) when viewed from above, but also produces a temperature difference in the IPA liquid film L in the vertical direction (the height direction of the IPA liquid film L) . For example, as shown in FIGS. 11 and 12, the
如圖11所示，第4溫度調整部64亦可呈網狀。此情形時，如圖11(b)所示，藉由毛細現象，將IPA吸附於網格空間內。因此，IPA液膜L容易隨著第4溫度調整部64而移動，故可從晶圓W表面更有效地排出IPA。As shown in FIG. 11, the 4th
如圖12(a)所示，第4溫度調整部64亦可由一或複數之棒狀體所構成。棒狀體亦可呈直線狀、曲線狀或曲折狀。於第4溫度調整部64以複數之棒狀體構成的情形時，該複數之棒狀體，亦可大致平行地排列，並沿著其排列方向而移動。於第4溫度調整部64由複數之棒狀體所構成的情形時，亦藉由毛細現象，將IPA吸附於網格空間內。因此，IPA液膜L容易隨著第4溫度調整部64而移動，故可從晶圓W表面更有效地排出IPA。As shown in FIG. 12(a), the fourth
如圖12(b)所示，第4溫度調整部64亦可由板狀體所構成。板狀體可呈平板狀，亦可呈現與晶圓W相同的形狀。板狀體中與晶圓W表面相向之底面，亦可呈凹凸狀。於板狀體的底面呈凹凸狀的情形時，亦可藉由毛細現象，將IPA吸附於網格空間內。因此，IPA液膜L容易隨著第4溫度調整部64移動，故可從晶圓W表面更有效地排出IPA。As shown in FIG. 12(b), the 4th
雖無圖示，但第4溫度調整部64亦可呈現環狀等上述以外之其他形狀。第4溫度調整部64可於晶圓W的上方直線移動，亦可藉由繞著既定垂直軸周圍旋轉而於晶圓W上方迴旋。Although not shown, the fourth
於晶圓W表面所形成之複數之圖案W1，亦可沿著既定方向規則地排列。例如，如圖13所示，於從上方觀察時複數之圖案W1皆呈大致長方體形的情形時，複數之圖案W1亦可皆沿著既定方向(圖13的左右方向)延伸。此情形時，亦可於晶圓W表面形成溫度梯度，俾使乾燥對象區A1沿著圖案W1的形狀往未處理區A2移動。例如，於溫度調整部60包含上述第1實施形態的第1溫度調整部61及第2溫度調整部62的情形時，第2溫度調整部62可沿著圖案W1的形狀移動，可沿著圖案W1的長邊方向移動，亦可沿著圖案W1的短邊方向移動。若IPA沿著圖案W1的形狀移動，則IPA的排出不易受到圖案W1的阻礙。因此，縱使於晶圓W表面形成圖案W1，IPA的移動仍為順暢，可防止於從晶圓W表面排出IPA時之圖案W1的破損。The plural patterns W1 formed on the surface of the wafer W may also be regularly arranged along a predetermined direction. For example, as shown in FIG. 13, when the plural patterns W1 are all substantially rectangular parallelepiped when viewed from above, the plural patterns W1 may all extend in a predetermined direction (the left-right direction in FIG. 13). In this case, a temperature gradient may be formed on the surface of the wafer W, so that the drying target area A1 moves to the unprocessed area A2 along the shape of the pattern W1. For example, when the
為了於晶圓W表面形成溫度梯度，俾使乾燥對象區A1沿著圖案W1的形狀往未處理區A2移動，故基板處理裝置10亦可更包含取得圖案W1的形狀之取得手段。該取得手段亦可包含：拍攝部，拍攝晶圓W的表面；及處理部，將拍攝部所拍攝之晶圓W表面的拍攝圖像加以圖像處理，而決定圖案W1的形狀。於晶圓W形成缺口部，且圖案W1對該缺口部之方向性已事先決定的情形時，該取得手段可構成為取得該缺口部的位置。缺口部可為例如凹槽(U字型、V字型等的溝)，亦可為延伸成直線狀之直線部(所謂的定向平面)。例如，控制部18亦可構成為根據取得手段所取得之圖案W1的形狀，決定IPA從晶圓W表面的排出方向。此情形時，於晶圓W表面形成溫度梯度，俾使IPA液膜L沿著所決定的排出方向從乾燥對象區A1往未處理區A2移動。因此，可依照圖案W1的形狀，自動設定IPA的排出方向。In order to form a temperature gradient on the surface of the wafer W, the drying target area A1 is moved along the shape of the pattern W1 to the unprocessed area A2. Therefore, the
基板處理裝置10亦可更包含：圍繞構件，藉由位於靠近晶圓W的周圍而圍住晶圓W。圍繞構件的頂面，亦可位於與晶圓W表面大致同等的高度，並沿著水平方向延伸。圍繞構件的頂面，亦可為從位於與晶圓W表面大致同等高度之內周緣越往外周緣越往下方傾斜之傾斜面。圍繞構件，亦可設成較晶圓W的溫度為低之溫度。基板處理裝置10，亦可更包含：氣體供給部，將設定成溫度較晶圓W的溫度為低之氣體，往圍繞構件的頂面噴吹。The
於上述之任一例中，亦可為了促進IPA的移動，而使晶圓W沿著IPA的移動方向(乾燥對象區A1的移動方向)傾斜。In any of the above-mentioned examples, in order to promote the movement of the IPA, the wafer W may be inclined along the movement direction of the IPA (the movement direction of the drying target area A1).
[例示] 例1：一例示的實施形態中，基板處理裝置包含：基板保持部，用以保持基板；乾燥液供給部，對於由基板保持部所保持之基板的表面，供給乾燥液；溫度調整部，使基板的表面溫度改變；及控制部，控制溫度調整部。控制部控制溫度調整部，俾使供給至基板的表面的乾燥液的液膜產生溫差。如上所述，若使供給至基板的表面的乾燥液的液膜產生溫差，則於液膜中產生溫差的區域中產生馬蘭哥尼對流，藉由馬蘭哥尼對流使乾燥液移動。因此，利用此乾燥液的移動，可從基板的表面排出乾燥液。藉由如此的構成，與利用外力使乾燥液從基板的表面排出的情形時相比，可減少基板的表面的圖案所受的影響，可防止從基板的表面去除乾燥液時之圖案破損。[Illustration] Example 1: In an exemplary embodiment, a substrate processing apparatus includes: a substrate holding part for holding a substrate; a drying liquid supply part for supplying a drying liquid to the surface of the substrate held by the substrate holding part; and a temperature adjusting part The surface temperature of the substrate changes; and the control section controls the temperature adjustment section. The control unit controls the temperature adjustment unit so as to generate a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate. As described above, if a temperature difference occurs in the liquid film of the drying liquid supplied to the surface of the substrate, Marangoni convection is generated in the region where the temperature difference occurs in the liquid film, and the drying liquid is moved by the Marangoni convection. Therefore, by using the movement of the drying liquid, the drying liquid can be discharged from the surface of the substrate. With such a configuration, compared with the case where the drying liquid is discharged from the surface of the substrate by external force, the influence of the pattern on the surface of the substrate can be reduced, and damage to the pattern when the drying liquid is removed from the surface of the substrate can be prevented.
例2：於例1的裝置中，基板的表面包含成為進行乾燥處理的對象之乾燥對象區、及未進行乾燥處理之未處理區，控制部控溫度調整部，使乾燥對象區與未處理區之間產生溫差。此情形時，於液膜中之乾燥對象區與未處理區的間的區域，產生馬蘭哥尼對流，藉由馬蘭哥尼對流使乾燥液移動。因此，利用此乾燥液的移動，可從基板的表面排出乾燥液。Example 2: In the device of Example 1, the surface of the substrate includes the drying target area that is the target of the drying process and the untreated area that has not been dried. The control unit controls the temperature adjustment unit to make the drying target area and the unprocessed area There is a temperature difference between. In this case, Marangoni convection occurs in the area between the drying target area and the untreated area in the liquid film, and the Marangoni convection causes the drying liquid to move. Therefore, by using the movement of the drying liquid, the drying liquid can be discharged from the surface of the substrate.
例3：於例2的裝置中，溫度調整部包含用以冷卻基板之基板冷卻部及用以加熱基板之基板加熱部，基板加熱部藉由使線狀熱源沿著基板的表面移動，而變更基板的表面中之加熱位置。藉由利用使線狀熱源沿著基板的表面移動之基板加熱部，可精細控制馬蘭哥尼對流產生的區域，可適當地進行乾燥液的去除。Example 3: In the device of Example 2, the temperature adjustment section includes a substrate cooling section for cooling the substrate and a substrate heating section for heating the substrate. The substrate heating section is modified by moving a linear heat source along the surface of the substrate. The heating position in the surface of the substrate. By using the substrate heating part that moves the linear heat source along the surface of the substrate, the area where Marangoni convection is generated can be finely controlled, and the drying liquid can be appropriately removed.
例4：於例2或例3的裝置中，溫度調整部包含用以冷卻基板之基板冷卻部及用以加熱基板之基板加熱部，基板冷卻部使冷卻基板全面。於設為以基板冷卻部冷卻基板全面之構成時，因可於將基板整體維持於既定的溫度之狀態下，使用基板加熱部，於使產生馬蘭哥尼對流之區域形成溫度梯度，故可適當地進行乾燥液的去除。Example 4: In the device of Example 2 or Example 3, the temperature adjustment section includes a substrate cooling section for cooling the substrate and a substrate heating section for heating the substrate. The substrate cooling section cools the entire substrate. When it is configured to cool the entire substrate by the substrate cooling part, the substrate heating part can be used to form a temperature gradient in the area where Marangoni convection occurs while maintaining the entire substrate at a predetermined temperature. The desiccant solution is removed at the same time.
例5：於例3的裝置中，基板冷卻部使線狀冷卻源沿著基板的表面與基板加熱部並行，以冷卻基板。於設為上述態樣的情形時，因可將基板冷卻部與基板冷卻部加以組合，於使產生馬蘭哥尼對流之期望區域形成溫度梯度，故可適當地進行乾燥液的去除。Example 5: In the device of Example 3, the substrate cooling unit makes the linear cooling source parallel to the substrate heating unit along the surface of the substrate to cool the substrate. In the case of the above aspect, since the substrate cooling part and the substrate cooling part can be combined to form a temperature gradient in the desired region where Marangoni convection occurs, the drying liquid can be appropriately removed.
例6：於例2～例5的任一的裝置中，控制部藉由控制溫度調整部，於基板的表面形成溫度梯度，俾使液膜從乾燥對象區往未處理區移動。藉由於基板的表面形成溫度梯度，俾使液膜從乾燥對象區往其他以外的區域移動，而使形成於基板的表面之溫度梯度所致之乾燥液的移動變成順暢，可防止從基板的表面去除乾燥液時之圖案破損。Example 6: In the device of any of Examples 2 to 5, the control unit controls the temperature adjustment unit to form a temperature gradient on the surface of the substrate to move the liquid film from the drying target area to the untreated area. Due to the temperature gradient formed on the surface of the substrate, the liquid film is moved from the drying target area to other areas, so that the movement of the drying liquid caused by the temperature gradient formed on the surface of the substrate becomes smooth, which can prevent the surface of the substrate The pattern is damaged when the drying liquid is removed.
例7：於例6的裝置中，於基板的表面形成既定形狀的圖案，控制部藉由控制溫度調整部，於基板的表面形成溫度梯度，俾使液膜沿著圖案的形狀從乾燥對象區往未處理區移動。此情形時，因乾燥液沿著圖案的形狀移動，故乾燥液的排出不易受到圖案的阻礙。因此，縱使於基板的表面形成圖案，乾燥液的移動仍為順暢，可防止從基板的表面排出乾燥液時之圖案破損。Example 7: In the device of Example 6, a pattern of a predetermined shape is formed on the surface of the substrate, and the control unit controls the temperature adjustment unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area along the shape of the pattern. Move to the untreated area. In this case, since the drying liquid moves along the shape of the pattern, the discharge of the drying liquid is not easily hindered by the pattern. Therefore, even if the pattern is formed on the surface of the substrate, the movement of the drying liquid is smooth, and damage to the pattern when the drying liquid is discharged from the surface of the substrate can be prevented.
例8：於例2的裝置中，溫度調整部包含用以加熱基板的表面的一部分之基板加熱部，控制部伴隨著於基板的表面形成溫度梯度的時間經過，加大加熱部的加熱量。藉由使用如此的基板加熱部，因可於使產生馬蘭哥尼對流之期望的區域形成溫度梯度，故可適當地進行乾燥液的去除。Example 8: In the device of Example 2, the temperature adjustment section includes a substrate heating section for heating a part of the surface of the substrate, and the control section increases the heating amount of the heating section as time elapses for the temperature gradient formed on the surface of the substrate. By using such a substrate heating part, since a temperature gradient can be formed in a desired region where Marangoni convection occurs, the drying liquid can be appropriately removed.
例9：於例1的裝置中，溫度調整部包含設定成較基板更低的溫度之低溫構件，控制部控制溫度調整部，使於低溫構件與液膜接觸的狀態下，低溫構件於基板的上方沿著基板的表面移動。此情形時，液膜中之與低溫構件相接觸之部分，與液膜中之與基板相接觸之部分相比，溫度變低，而表面張力相對變大(馬蘭哥尼現象)。故液膜被拉往低溫構件。因此，藉由使低溫構件沿著基板的表面移動，使得液膜亦受低溫構件影響而沿著基板的表面移動。結果，可一面適當地控制低溫構件的移動方向及移動速度，一面從基板的表面以期望的路徑及速度排出乾燥液。Example 9: In the device of Example 1, the temperature adjusting part includes a low-temperature component set to a lower temperature than the substrate, and the control part controls the temperature adjusting part so that the low-temperature component is on the substrate when the low-temperature component is in contact with the liquid film. The upper part moves along the surface of the substrate. In this case, the temperature of the part in contact with the low-temperature member in the liquid film is lower than the part in contact with the substrate in the liquid film, and the surface tension becomes relatively larger (Marangoni phenomenon). Therefore, the liquid film is pulled to the low temperature component. Therefore, by moving the low-temperature component along the surface of the substrate, the liquid film is also affected by the low-temperature component and moves along the surface of the substrate. As a result, while appropriately controlling the moving direction and moving speed of the low-temperature member, it is possible to discharge the drying liquid from the surface of the substrate at a desired path and speed.
例10：於例1～例9的任一的裝置中，基板保持部可使基板傾斜。藉由設為使基板可傾斜之構成，因可促進利用馬蘭哥尼對流所致之乾燥液的移動，故可加快乾燥液的去除速度。Example 10: In the device of any one of Examples 1 to 9, the substrate holding portion can tilt the substrate. By making the substrate tiltable, the movement of the drying liquid due to Marangoni convection can be promoted, so the removal rate of the drying liquid can be increased.
例11：於例2的裝置中，溫度調整部包含：基板冷卻部，用以冷卻基板全面；及基板加熱部，用以加熱基板的包括中心之區域。藉由一面利用基板冷卻部冷卻基板全面，一面利用基板加熱部加熱基板的包括中心之區域，可形成從基板的包括中心之區域擴散成圓環狀之溫度梯度。因此，可利用馬蘭哥尼對流使乾燥液往基板的外周方向移動，可適當地進行乾燥液的去除。Example 11: In the device of Example 2, the temperature adjustment section includes: a substrate cooling section for cooling the entire substrate; and a substrate heating section for heating the center of the substrate. By cooling the entire surface of the substrate by the substrate cooling part and heating the area including the center of the substrate by the substrate heating part, a temperature gradient that diffuses into a ring shape from the area including the center of the substrate can be formed. Therefore, Marangoni convection can be used to move the drying liquid to the outer circumference of the substrate, and the drying liquid can be appropriately removed.
例12：於例2的基板處理裝置中，溫度調整部包含基板加熱部，該基板加熱部可形成基板的包括中心之區域的加熱溫度最高而越往外周加熱溫度越低之溫度梯度。藉由利用上述的基板加熱部，可形成從基板的包括中心之區域擴散成圓環狀之溫度梯度。因此，可利用馬蘭哥尼對流使乾燥液往基板的外周方向移動，可適當地進行乾燥液的去除。Example 12: In the substrate processing apparatus of Example 2, the temperature adjustment section includes a substrate heating section that can form a temperature gradient with the highest heating temperature in the region including the center of the substrate and the lower the heating temperature toward the outer periphery. By using the above-mentioned substrate heating part, a temperature gradient that diffuses into an annular shape from the region including the center of the substrate can be formed. Therefore, Marangoni convection can be used to move the drying liquid to the outer circumference of the substrate, and the drying liquid can be appropriately removed.
例13：於另一例示的實施形態中，基板處理方法包含：對於藉由基板保持部所保持之基板的表面，供給乾燥液；及藉由使乾燥液的液膜產生溫差，使乾燥液從基板的表面排出。此情形時，可達到與例1相同的作用效果。Example 13: In another exemplary embodiment, a substrate processing method includes: supplying a drying liquid to the surface of the substrate held by the substrate holding portion; and generating a temperature difference in the liquid film of the drying liquid to cause the drying liquid from The surface of the substrate is discharged. In this case, the same effect as in Example 1 can be achieved.
例14：於例13的方法中，形成有液膜的基板的表面包含：成為進行乾燥處理的對象之乾燥對象區、及未進行乾燥處理之未處理區，排出乾燥液步驟之步驟亦可包含下述步驟：於基板的表面形成溫度梯度，俾使液膜從乾燥對象區往未處理區移動。藉由設為如此態樣，因可利用溫度梯度精細控制乾燥液的液膜的移動，故可適當地進行乾燥液的去除。Example 14: In the method of Example 13, the surface of the substrate on which the liquid film is formed includes the drying target area that is the object of the drying treatment and the untreated area that is not subjected to the drying treatment. The step of discharging the drying liquid may also include The following steps: forming a temperature gradient on the surface of the substrate to move the liquid film from the drying target area to the untreated area. With this configuration, since the movement of the liquid film of the drying liquid can be finely controlled by the temperature gradient, the drying liquid can be appropriately removed.
例15：於例14的方法中，於基板的表面形成既定形狀的圖案排出乾燥液之步驟，包含下述步驟：於基板的表面形成溫度梯度，俾使液膜沿著圖案的形狀從乾燥對象區往未處理區移動。此情形時，可達到與例7相同的作用效果。Example 15: In the method of Example 14, the step of forming a pattern of a predetermined shape on the surface of the substrate to discharge the drying liquid includes the following steps: forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying object along the shape of the pattern The area moves to the untreated area. In this case, the same effect as in Example 7 can be achieved.
例16：例15的方法可更包含藉由取得圖案形狀而決定乾燥液的排出方向之步驟，排出乾燥液之步驟包含下述步驟：於基板的表面形成溫度梯度，俾使液膜沿著所決定之排出方向從乾燥對象區往未處理區移動。此情形時，可依照圖案的形狀，自動設定乾燥液的排出方向。Example 16: The method of Example 15 may further include the step of determining the discharge direction of the drying liquid by obtaining the pattern shape. The step of discharging the drying liquid includes the following steps: forming a temperature gradient on the surface of the substrate to make the liquid film follow the The determined discharge direction moves from the dry target area to the untreated area. In this case, the discharge direction of the drying liquid can be automatically set according to the shape of the pattern.
例17：於例14～例16的任一的方法中，排出乾燥液之步驟包含下述步驟：藉由使加熱位置從基板的周緣部的一側往另一側移動，而使乾燥液的液膜移動。藉由設為如此態樣，使加熱位置從基板的周緣部的一側往另一側移動，藉此可排出乾燥液。因此，可適當地進行乾燥液的去除。Example 17: In the method of any one of Examples 14 to 16, the step of discharging the drying liquid includes the following step: by moving the heating position from one side of the peripheral edge of the substrate to the other side, the drying liquid The liquid film moves. With this configuration, the heating position is moved from one side of the peripheral edge of the substrate to the other side, whereby the drying liquid can be discharged. Therefore, the drying liquid can be removed appropriately.
例18：於另一例示的實施形態中，電腦可讀取之記錄媒體，其記錄有用以使裝置執行例13～例17中之任一方法的程式。此情形時，可達到與上述基板處理方法相同的作用效果。本說明書中，電腦可讀取記錄媒體包含非暫時性之有形媒體(non-transitory computer recording medium：非暫時性電腦記錄媒體)(例如各種主記憶裝置或輔助記憶裝置)、傳播信號(transitory computer recording medium：暫時性電腦記錄媒體)(例如可藉由網路提供之資料信號)。Example 18: In another exemplary embodiment, a computer-readable recording medium records a program for the device to perform any of the methods in Examples 13 to 17. In this case, the same effect as the above-mentioned substrate processing method can be achieved. In this manual, computer-readable recording media include non-transitory computer recording medium (non-transitory computer recording medium) (such as various main memory devices or auxiliary memory devices), and transitory computer recording media. medium: Temporary computer recording media) (for example, data signals that can be provided via the Internet).
1:基板處理系統 2:搬出入站 3:處理站 4:控制裝置 10:基板處理裝置 11:載體載置部 12:搬運部 13:基板搬運裝置 14:傳遞部 15:搬運部 16:處理單元 17:基板搬運裝置 18:控制部 19:記憶部 20:處理室 21:FFU(風機過濾機組) 30:基板保持機構 31:保持部 32:支柱部 33:驅動部 40:處理液供給部 41:噴嘴 50:回收杯 51:排出液口 52:排氣口 60,60A,60B,70,70A:溫度調整部 61,71:第1溫度調整部 62,72:第2溫度調整部 63:第3溫度調整部 64:第4溫度調整部(低溫構件) 73:氣體噴射部 80:處理液供給源 81:化學液供給源 82:DIW供給源 83:IPA供給源 A1:乾燥對象區 A2:未處理區 C:載體 L:IPA液膜 La:邊緣部 Lb:剩餘部 S:箭頭 S01~S04:步驟 T1,T2:溫度 V1,V2,V3:閥 W:晶圓 W1:圖案 Wa:端部 Wb:圖示左側的端部Wc:圖示右側的端部1: Substrate processing system 2: Move out and inbound 3: Processing station 4: control device 10: Substrate processing equipment 11: Carrier placement part 12: Handling Department 13: substrate handling device 14: Transmission Department 15: Handling Department 16: processing unit 17: Substrate handling device 18: Control Department 19: Memory Department 20: Processing room 21: FFU (fan filter unit) 30: Substrate holding mechanism 31: Holding part 32: Pillar 33: Drive 40: Treatment liquid supply part 41: Nozzle 50: recycling cup 51: discharge port 52: exhaust port 60, 60A, 60B, 70, 70A: temperature adjustment section 61, 71: 1st temperature adjustment part 62, 72: 2nd temperature adjustment part 63: The third temperature adjustment part 64: 4th temperature adjustment part (low temperature member) 73: Gas Injection Department 80: Treatment liquid supply source 81: Chemical liquid supply source 82: DIW supply source 83: IPA supply source A1: Dry target area A2: Untreated area C: carrier L: IPA liquid film La: Edge Lb: remaining part S: Arrow S01~S04: steps T1, T2: temperature V1, V2, V3: Valve W: Wafer W1: pattern Wa: End Wb: The end on the left side of the figure Wc: The end on the right side of the figure
【圖1】圖1係一例示的實施形態之基板處理系統之概要俯視圖。 【圖2】圖2係一例示的實施形態之基板處理裝置的示意圖。 【圖3】圖3係說明一例示的實施形態之基板處理方法之流程圖。 【圖4】圖4(a)、圖4(b)、圖4(c)係利用第1實施形態之溫度調整部所為之IPA排出處理之說明圖。 【圖5】圖5(a)、圖5(b)、圖5(c)係利用第1實施形態的變形例之溫度調整部所為之IPA排出處理之說明圖。 【圖6】圖6(a)、圖6(b)、圖6(c)係利用第1實施形態的變形例之溫度調整部所為之IPA排出處理之說明圖。 【圖7】圖7(a)、圖7(b)、圖7(c)係利用第2實施形態的變形例之溫度調整部所為之IPA排出處理之說明圖。 【圖8】圖8(a)、圖8(b)、圖8(c)係利用第2實施形態的變形例之溫度調整部所為之IPA排出處理之說明圖。 【圖9】圖9(a)、圖9(b)、圖9(c)係利用第2實施形態的變形例之溫度調整部所為之IPA排出處理之說明圖。 【圖10】圖10(a)、圖10(b)、圖10(c)係利用第2實施形態的變形例之溫度調整部所為之IPA排出處理之說明圖。 【圖11】圖11(a)、圖11(b)係利用溫度調整部所為之IPA排出處理之其他例之說明圖。 【圖12】圖12(a)、圖12(b)係利用溫度調整部所為之IPA排出處理之其他例之說明圖。 【圖13】圖13係複數之圖案沿著既定方向規則排列的情形時之說明圖。[Fig. 1] Fig. 1 is a schematic plan view of a substrate processing system according to an exemplary embodiment. [Fig. 2] Fig. 2 is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment. [Fig. 3] Fig. 3 is a flowchart illustrating a substrate processing method of an exemplary embodiment. [Fig. 4] Fig. 4(a), Fig. 4(b), and Fig. 4(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment unit of the first embodiment. [Fig. 5] Fig. 5(a), Fig. 5(b), and Fig. 5(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment unit of the modification of the first embodiment. [Fig. 6] Fig. 6(a), Fig. 6(b), and Fig. 6(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment part of the modification of the first embodiment. [Fig. 7] Fig. 7(a), Fig. 7(b), and Fig. 7(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment unit of the modification of the second embodiment. [Fig. 8] Fig. 8(a), Fig. 8(b), and Fig. 8(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment unit of the modification of the second embodiment. [Fig. 9] Fig. 9(a), Fig. 9(b), and Fig. 9(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment unit of the modification of the second embodiment. [Fig. 10] Fig. 10(a), Fig. 10(b), and Fig. 10(c) are explanatory diagrams of the IPA discharge process performed by the temperature adjustment part of the modification of the second embodiment. [Fig. 11] Fig. 11(a) and Fig. 11(b) are explanatory diagrams of other examples of the IPA discharge process performed by the temperature adjustment unit. [Fig. 12] Fig. 12(a) and Fig. 12(b) are explanatory diagrams of other examples of IPA discharge processing performed by the temperature adjustment unit. [Fig. 13] Fig. 13 is an explanatory diagram when plural patterns are regularly arranged along a predetermined direction.
60:溫度調整部 60: Temperature adjustment department
61:第1溫度調整部 61: The first temperature adjustment part
62:第2溫度調整部 62: The second temperature adjustment part
A1:乾燥對象區 A1: Dry target area
A2:未處理區 A2: Untreated area
L:IPA液膜 L: IPA liquid film
La:邊緣部 La: Edge
Lb:剩餘部 Lb: remaining part
S:箭頭 S: Arrow
T1,T2:溫度 T1, T2: temperature
W:晶圓 W: Wafer
W1:圖案 W1: pattern
Wa:端部 Wa: End
Claims (19)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018199486 | 2018-10-23 | ||
| JP2018-199486 | 2018-10-23 | ||
| JP2019144427A JP7336306B2 (en) | 2018-10-23 | 2019-08-06 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM |
| JP2019-144427 | 2019-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202025272A true TW202025272A (en) | 2020-07-01 |
Family
ID=70390567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108136801A TW202025272A (en) | 2018-10-23 | 2019-10-14 | Substrate processing device, substrate processing method, and storage medium |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7336306B2 (en) |
| KR (1) | KR20200045960A (en) |
| CN (1) | CN111092031B (en) |
| TW (1) | TW202025272A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7465164B2 (en) | 2020-07-08 | 2024-04-10 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method |
| JP7485561B2 (en) | 2020-07-14 | 2024-05-16 | 東京エレクトロン株式会社 | Substrate processing method |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3998382B2 (en) * | 1999-12-15 | 2007-10-24 | 株式会社東芝 | Film forming method and film forming apparatus |
| KR20020087310A (en) * | 2001-05-15 | 2002-11-22 | 삼성전자 주식회사 | Apparatus for drying wafer |
| KR20090001091A (en) * | 2007-06-29 | 2009-01-08 | (주)티티에스 | Semiconductor manufacturing apparatus having outside heater |
| CN101740298B (en) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | Plasma processing apparatus and constituent part thereof |
| JP5254308B2 (en) * | 2010-12-27 | 2013-08-07 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing method, and recording medium storing program for executing liquid processing method |
| US9673037B2 (en) * | 2011-05-31 | 2017-06-06 | Law Research Corporation | Substrate freeze dry apparatus and method |
| JP6017922B2 (en) | 2012-10-29 | 2016-11-02 | 東京エレクトロン株式会社 | Substrate drying method, liquid processing system, and storage medium |
| JP6317837B2 (en) * | 2012-11-08 | 2018-04-25 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| JP6400919B2 (en) * | 2013-03-07 | 2018-10-03 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| US9538586B2 (en) * | 2013-04-26 | 2017-01-03 | Applied Materials, Inc. | Method and apparatus for microwave treatment of dielectric films |
| TWI654703B (en) * | 2014-02-27 | 2019-03-21 | 日商斯克林集團公司 | Substrate processing device |
| JP6579773B2 (en) * | 2015-03-30 | 2019-09-25 | 株式会社Ｓｃｒｅｅｎホールディングス | Vacuum drying apparatus and vacuum drying method |
| JP6586697B2 (en) | 2015-12-25 | 2019-10-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| JP2017157800A (en) * | 2016-03-04 | 2017-09-07 | 東京エレクトロン株式会社 | Liquid-processing method, substrate processing device, and storage medium |
| JP6798185B2 (en) * | 2016-08-08 | 2020-12-09 | 東京エレクトロン株式会社 | Liquid treatment method, substrate processing equipment and storage medium |
| JP6779769B2 (en) * | 2016-12-07 | 2020-11-04 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method and storage medium |
| JP6811619B2 (en) | 2017-01-12 | 2021-01-13 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing equipment |
-
2019
- 2019-08-06 JP JP2019144427A patent/JP7336306B2/en active Active
- 2019-10-14 TW TW108136801A patent/TW202025272A/en unknown
- 2019-10-16 KR KR1020190128135A patent/KR20200045960A/en not_active Application Discontinuation
- 2019-10-23 CN CN201911012334.XA patent/CN111092031B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020068372A (en) | 2020-04-30 |
| KR20200045960A (en) | 2020-05-06 |
| CN111092031B (en) | 2024-06-25 |
| JP7336306B2 (en) | 2023-08-31 |
| CN111092031A (en) | 2020-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9984904B2 (en) | Substrate treatment system, substrate transfer method and computer storage medium | |
| TWI623816B (en) | Coating treatment method, computer-recordable medium, and coating treatment device | |
| KR102584337B1 (en) | Substrate processing apparatus, substrate processing method and recording medium | |
| TWI656570B (en) | Substrate liquid processing device, substrate liquid processing method, and memory medium | |
| US8707893B2 (en) | Substrate treatment system, substrate treatment method, and non-transitory computer storage medium | |
| US20170084470A1 (en) | Substrate processing apparatus and cleaning method of processing chamber | |
| JP6728358B2 (en) | Substrate processing apparatus, substrate processing method and storage medium | |
| JP2004207573A (en) | Coating processor | |
| TW202025272A (en) | Substrate processing device, substrate processing method, and storage medium | |
| JP2008192943A (en) | Substrate treatment system | |
| US11515182B2 (en) | Drying apparatus, substrate processing system, and drying method | |
| TWI756451B (en) | Substrate processing method and substrate processing apparatus | |
| JP2018107292A (en) | Substrate processing method and substrate processing device | |
| US20200126818A1 (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| JP7169865B2 (en) | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD | |
| JP7143465B2 (en) | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD | |
| JP7138493B2 (en) | Substrate liquid processing method, storage medium and substrate liquid processing apparatus | |
| JP2011035186A (en) | Coating processing device, coating processing method, program, and computer storage medium | |
| WO2021124929A1 (en) | Substrate processing method and substrate processing system | |
| JP2011049353A (en) | Application film forming method, program, computer storage medium, and substrate processing system | |
| KR20240039612A (en) | Substrate processing method and substrate processing device | |
| JP2007214180A (en) | Substrate processing method, program, and substrate processing apparatus |