CN111092031B - Substrate processing apparatus, substrate processing method, and storage medium - Google Patents

Substrate processing apparatus, substrate processing method, and storage medium Download PDF

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Publication number
CN111092031B
CN111092031B CN201911012334.XA CN201911012334A CN111092031B CN 111092031 B CN111092031 B CN 111092031B CN 201911012334 A CN201911012334 A CN 201911012334A CN 111092031 B CN111092031 B CN 111092031B
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substrate
temperature
wafer
drying
unit
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CN111092031A (en
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川渕洋介
池田恭子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention provides a substrate processing apparatus, a substrate processing method and a storage medium, wherein the substrate processing apparatus can prevent pattern breakage when drying liquid is removed from the surface of a substrate. The substrate processing apparatus includes: a substrate holding unit that holds a substrate; a drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit; a temperature adjustment unit that changes the surface temperature of the substrate; and a control unit that controls the temperature adjustment unit. The control unit controls the temperature adjustment unit so that a temperature difference is generated in a liquid film of the drying liquid supplied to the surface of the substrate.

Description

Substrate processing apparatus, substrate processing method, and storage medium
Technical Field
The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.
Background
As a method of drying a substrate after a cleaning process, a method of supplying a drying liquid to a surface of a substrate, replacing a rinse liquid or the like with the drying liquid, and then removing the drying liquid has been studied (see patent document 1).
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2014-90015
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a technique capable of preventing pattern breakage from occurring when drying liquid is removed from a substrate surface.
Solution for solving the problem
A substrate processing apparatus according to an embodiment of the present disclosure includes: a substrate holding unit that holds a substrate; a drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit; a temperature adjustment unit that changes the surface temperature of the substrate; and a control unit that controls the temperature adjustment unit. The control unit controls the temperature adjustment unit so that a temperature difference is generated in a liquid film of the drying liquid supplied to the surface of the substrate.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an exemplary embodiment, pattern breakage can be prevented from occurring when the drying liquid is removed from the substrate surface.
Drawings
Fig. 1 is a plan view schematically showing a substrate processing system according to an exemplary embodiment.
Fig. 2 is a schematic view of a substrate processing apparatus according to an exemplary embodiment.
Fig. 3 is a flowchart illustrating a substrate processing method according to an exemplary embodiment.
Fig. 4 (a), 4 (b), and 4 (c) are diagrams for explaining the IPA discharge processing by the temperature adjustment unit according to the first embodiment.
Fig. 5 (a), 5 (b) and 5 (c) are diagrams for explaining the IPA discharge processing by the temperature adjusting unit according to the modification of the first embodiment.
Fig. 6 (a), 6 (b) and 6 (c) are diagrams for explaining the IPA discharge processing by the temperature adjusting unit according to the modification of the first embodiment.
Fig. 7 (a), 7 (b) and 7 (c) are diagrams for explaining the IPA discharge processing by the temperature adjusting unit according to the modification of the second embodiment.
Fig. 8 (a), 8 (b) and 8 (c) are diagrams of the IPA discharge processing by the temperature adjustment unit according to the modification of the second embodiment.
Fig. 9 (a), 9 (b) and 9 (c) are diagrams for explaining the IPA discharge processing by the temperature adjusting unit according to the modification of the second embodiment.
Fig. 10 (a), 10 (b) and 10 (c) are diagrams for explaining the IPA discharge processing by the temperature adjusting unit according to the modification of the second embodiment.
Fig. 11 (a) and 11 (b) are diagrams illustrating another example of the IPA discharge processing performed by the temperature adjusting unit.
Fig. 12 (a) and 12 (b) are diagrams illustrating another example of the IPA discharge processing performed by the temperature adjusting unit.
Fig. 13 (a) and 13 (b) are diagrams illustrating another example of the IPA discharge processing performed by the temperature adjusting unit.
Detailed Description
Various exemplary embodiments are described in detail below with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals.
< First embodiment >
[ Structure of substrate processing System ]
Fig. 1 is a diagram showing an outline configuration of a substrate processing system according to a first embodiment. In the following, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis orthogonal to each other are defined, and the positive Z axis direction is set to be the vertically upward direction.
As shown in fig. 1, the substrate processing system 1 includes a first carry-in/out station 2 and a processing station 3. The carry-in/carry-out station 2 is provided adjacent to the processing station 3.
The carry-in/out station 2 includes a carrier placement unit 11 and a conveying unit 12. A plurality of carriers C storing a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter, referred to as wafers W) in a horizontal state are placed on the carrier placement unit 11.
The conveyance unit 12 is provided adjacent to the carrier mounting unit 11, and includes a substrate conveyance device 13 and a delivery unit 14 inside the conveyance unit 12. The substrate transfer apparatus 13 includes a wafer holding mechanism for holding the wafer W. The substrate transfer device 13 is movable in the horizontal direction and the vertical direction and rotatable about the vertical axis, and the substrate transfer device 13 transfers the wafer W between the carrier C and the transfer section 14 using a wafer holding mechanism.
The processing station 3 is provided adjacent to the conveying section 12. The processing station 3 includes a conveying section 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the conveying section 15.
The conveying section 15 includes a substrate conveying device 17 therein. The substrate transfer apparatus 17 includes a wafer holding mechanism for holding the wafer W. The substrate transfer device 17 is movable in the horizontal direction and the vertical direction and rotatable about the vertical axis, and the substrate transfer device 17 transfers the wafer W between the transfer section 14 and the processing unit 16 using a wafer holding mechanism.
The processing unit 16 performs predetermined substrate processing on the wafer W conveyed by the substrate conveying device 17 under the control of a control unit 18 of the control device 4 described later.
The substrate processing system 1 further includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The memory unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 reads and executes the program stored in the storage unit 19 to control the operation of the substrate processing system 1.
Further, the program may be stored in a storage medium readable by a computer, and installed from the storage medium into the storage section 19 of the control device 4. Examples of the storage medium readable by the computer include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the carry-in/out station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the transfer unit 14. The wafer W placed on the transfer section 14 is taken out of the transfer section 14 by the substrate transfer device 17 of the processing station 3 and then carried into the processing unit 16.
After the wafer W carried into the processing unit 16 is processed by the processing unit 16, the wafer W is carried out from the processing unit 16 by the substrate carrying device 17 and then placed in the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer apparatus 13.
[ Structure of substrate processing apparatus ]
The structure of the substrate processing apparatus 10 included in the substrate processing system 1 will be described with reference to fig. 2. The substrate processing apparatus 10 is provided in a processing unit 16 of the substrate processing system 1.
As shown in fig. 2, the substrate processing apparatus 10 includes a chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, a recovery cup 50, and a temperature adjustment unit 60.
The chamber 20 accommodates the substrate holding mechanism 30, the processing liquid supply unit 40, and the recovery cup 50. An FFU (FAN FILTER Unit: blower filtration Unit) 21 is provided at the top of the chamber 20. The FFU 21 has a function of forming a down flow in the chamber 20. The FFU 21 supplies the downflow gas supplied from a downflow gas supply pipe (not shown) into the chamber 20 to form the downflow gas.
The substrate holding mechanism 30 has a function of rotatably holding the wafer W. The substrate holding mechanism 30 includes a holding portion 31, a pillar portion 32, and a driving portion 33. The holding unit 31 holds the wafer W horizontally. The support column 32 is a member extending in the vertical direction, and a base end portion of the support column 32 is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at a front end portion of the support column 32. The driving unit 33 rotates the pillar 32 about the vertical axis. The substrate holding mechanism 30 rotates the support portion 32 by using the driving portion 33 to rotate the holding portion 31 supported by the support portion 32, thereby rotating the wafer W held by the holding portion 31.
The processing liquid supply unit 40 supplies a processing liquid to the wafer W. The processing liquid supply unit 40 is connected to a processing liquid supply source 80. The processing liquid supply section 40 has a nozzle 41 for supplying the processing liquid from the processing liquid supply source 80. The processing liquid supply source 80 has a plurality of supply sources for the processing liquids, and changes the processing liquid to be supplied according to the progress of the processing of the wafer W. The nozzle 41 is provided in a head portion of a nozzle arm (not shown) that is rotatable in a lateral direction (horizontal direction). Further, the processing liquid can be supplied onto the wafer W while changing the position of the tip of the nozzle 41 by the rotational movement of the nozzle arm.
As the treatment liquid supply source 80, a chemical liquid supply source 81, a DIW supply source 82, and an IPA supply source 83 are provided. The chemical supply source 81 supplies one or more types of chemical for treating the surface of the wafer W. The DIW supply source 82 supplies DIW (Deionized Water: pure water) for performing a rinsing process on the surface of the wafer W. The IPA supply source 83 supplies IPA for replacing the DIW on the surface of the wafer W with IPA (isopropyl alcohol: isopropyl alcohol). IPA is a volatile drying liquid with a small surface tension compared to DIW. Therefore, the DIW on the surface of the wafer W is first replaced with IPA, and then the IPA is removed to dry the wafer W, thereby preventing pattern breakage from occurring on the surface of the wafer W when the wafer W is dried. The chemical liquid supply source 81, the DIW supply source 82, and the IPA supply source 83 are connected to the nozzle 41 through valves V1, V2, and V3, respectively. The processing liquid supplied from the nozzle 41 to the wafer W can be changed by switching the valves V1, V2, V3.
Although only one nozzle 41 is shown in fig. 2, a plurality of nozzles may be provided separately for a plurality of treatment liquids, or a single nozzle may be shared by a part of the treatment liquids.
The movement of the nozzle 41, the supply/stop of the liquid from each supply source of the treatment liquid supply source 80, and the like are controlled by the control unit 18.
The recovery cup 50 is disposed so as to surround the holding portion 31, and is configured to capture the processing liquid scattered from the wafer W due to the rotation of the holding portion 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid captured by the recovery cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. Further, an exhaust port 52 is formed at the bottom of the recovery cup 50, and the exhaust port 52 is used to exhaust the gas supplied from the FFU 21 to the outside of the processing unit 16.
The temperature adjusting unit 60 has a function of controlling the temperature of the surface of the wafer W held by the holding unit 31. In the substrate processing apparatus 10 shown in fig. 2, the temperature adjustment unit 60 includes a first temperature adjustment unit 61 for controlling the temperature of the entire surface of the wafer W on the back surface side of the holding unit 31, and a linear second temperature adjustment unit 62 provided on the front surface side of the wafer W. The first temperature adjusting unit 61 and the second temperature adjusting unit 62 perform heating or cooling, respectively, to thereby control the temperature distribution of the surface of the wafer W. That is, the first temperature adjusting portion 61 and the second temperature adjusting portion 62 function as a substrate heating portion or a substrate cooling portion.
The first temperature adjusting unit 61 is provided on the back surface side of the wafer W to control the temperature of the entire wafer W. However, the first temperature adjusting unit 61 may be configured to control the temperature of the wafer W with respect to the surface thereof: the wafer W is not heated or cooled at the same temperature, and the temperature distribution on the surface of the wafer W is varied. For example, the following structure may be adopted: the first temperature adjusting unit 61 is divided into a plurality of regions, and independent temperature control is performed for each region, that is, so-called multi-channel control (japanese) is performed, whereby different positions of the wafer W are heated at different heating temperatures. In addition, the structure may be as follows: the surface temperature of the wafer W is given a prescribed gradient by using the multi-channel control. When the wafer W is heated by the first temperature adjusting unit 61, a hot plate can be used as the first temperature adjusting unit 61. In addition, when the wafer W is cooled by the first temperature adjusting portion 61, a cooling plate may be used as the first temperature adjusting portion 61. However, the structure of the first temperature adjusting portion 61 is not limited thereto.
The second temperature adjusting unit 62 is a linear heat source or cooling source extending in the lateral direction (horizontal direction) at a predetermined distance from the surface of the wafer W (see also fig. 4 (a)). Fig. 2 shows a state in which the second temperature adjustment unit 62 is arranged such that the longitudinal direction thereof is the Y-axis direction. The second temperature adjustment unit 62 is movable in a direction (for example, a direction orthogonal to the longitudinal direction) intersecting the longitudinal direction of the second temperature adjustment unit 62 in the lateral direction (horizontal direction). The second temperature adjusting unit 62 shown in fig. 2 is provided so as to be movable in the X-axis direction over the entire area overlapping the surface of the wafer W on the holding unit 31 in a plan view. By adopting such a configuration, a specific region (region close to the second temperature adjusting portion 62) of the wafer W can be heated or cooled. When the wafer W is heated by the second temperature adjusting unit 62, a laser or a lamp may be used as the second temperature adjusting unit 62. In the case of cooling the wafer W by the second temperature adjustment unit 62, a gas flow (cooled gas) can be used as the second temperature adjustment unit 62. However, the structure of the second temperature adjusting portion 62 is not limited thereto.
The control unit 18 controls the adjustment of the heating temperature or the cooling temperature by the first temperature adjustment unit 61 and the second temperature adjustment unit 62, the movement of the second temperature adjustment unit 62, and the like.
[ Method of treating substrate ]
The liquid treatment performed by the substrate treatment apparatus 10 will be described with reference to fig. 3.
First, when the wafer W carried into the processing unit 16 by the substrate carrying device 17 is held by the holding portion 31 of the substrate holding mechanism 30, the nozzle 41 is moved to a processing position on the wafer W. Then, the wafer W is rotated at a predetermined rotation speed and chemical is supplied from the nozzle 41, whereby chemical processing is performed (S01). At this time, the support column 32 and the driving unit 33 shown in fig. 2 correspond to a rotation mechanism for rotating the wafer W held by the holding unit 31.
Next, a rinse cleaning process is performed to change the processing liquid supplied from the nozzle 41 to DIW and perform cleaning (S02). Specifically, DIW is supplied to the wafer W having the liquid film of chemical solution in a state where the wafer W is rotated. By supplying DIW, residues adhering to the wafer W are washed away by the DIW.
After the rinsing and cleaning process for a predetermined time is performed, the supply of DIW from the nozzle 41 is stopped. Next, a replacement process is performed in which IPA is supplied from the nozzle 41 to the surface of the wafer W to replace DIW on the surface of the wafer W with IPA (S03: a dry liquid supply step). An IPA liquid film is formed on the surface of the wafer W by supplying IPA to the surface of the wafer W. Accordingly, DIW remaining on the surface of the wafer W is replaced with IPA.
After the DIW on the surface of the wafer W is sufficiently replaced with IPA, the supply of IPA to the wafer W is stopped. Then, an evacuation process is performed to evacuate IPA remaining on the surface of the wafer W from the surface of the wafer W (S04: evacuation step). The surface of the wafer W is dried by discharging IPA from the surface of the wafer W. In the substrate processing apparatus 10, the temperature deviation generated on the surface of the wafer W is caused by the temperature adjustment unit 60, thereby promoting the discharge of IPA from the surface of the wafer W. This point is described later.
When the surface of the wafer W is dried, the liquid treatment for the wafer W is ended. The wafer W is carried out from the substrate processing apparatus 10 by a process opposite to the process at the time of carrying in.
[ Discharge treatment ]
The discharge process of the IPA by the temperature adjusting unit 60 will be described with reference to fig. 4 (a) to 4 (c). Fig. 4 (a) is a perspective view illustrating the operation of the second temperature adjusting unit 62 disposed on the surface of the wafer W. Fig. 4 (b) is a diagram illustrating temperature control of the wafer W by the first temperature adjusting unit 61 and the second temperature adjusting unit 62. As shown in fig. 4 b, a predetermined pattern W1 (e.g., a resist pattern) is formed on the surface of the wafer W. Fig. 4 (c) is a diagram illustrating the temperature of the surface of the wafer W.
Before the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. In the examples shown in fig. 4 (a) to 4 (c), the first temperature adjusting portion 61 functions as a substrate cooling portion that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a fixed temperature by the first temperature adjusting unit 61. The second temperature adjusting unit 62 functions as a substrate heating unit that heats a predetermined position on the surface of the wafer W from the surface side of the wafer W. In the case of discharging IPA, as shown in fig. 4 (b), the second temperature adjusting portion 62 is disposed so as to be close to the end of the wafer W. The surface of the end portion of the wafer W is heated by the second temperature adjusting unit 62.
As a result, as shown in fig. 4 (c), the temperature T1 of the end (outer periphery) of the second temperature adjusting portion 62 on the side where the second temperature adjusting portion is disposed close to the surface of the wafer W is higher than the temperature T2 of the other region. Then, a drying target region A1 that changes from the temperature T1 to the temperature T2 is formed between the end of the wafer W at the temperature T1 and the unprocessed region A2 at the temperature T2. That is, the surface of the wafer W includes a drying target area A1 and an unprocessed area A2 adjacent to the drying target area A1. In other words, the temperature of the edge portion La of the IPA liquid film L near the drying target area A1 is higher than the temperature of the remaining portion Lb of the IPA liquid film L corresponding to the untreated area A2. Therefore, a temperature difference is generated between the edge portion La and the remaining portion Lb. Accordingly, in the drying target area A1, the IPA liquid film L is accumulated toward the untreated area A2 side having a low temperature.
In the drying target region A1, the temperature of the surface of the wafer W is higher than that of the other region having the temperature T2, and thus evaporation (volatilization) of IPA from the IPA liquid film L can be promoted. As a result, the film thickness of the IPA liquid film L in the drying target area A1 is smaller than the film thickness of the untreated area A2 (the area at the temperature T2). As a result, a surface tension difference is generated between the IPA liquid film L in the drying target area A1 and the IPA liquid film L in the untreated area A2, and the surface tension of the IPA liquid film L in the drying target area A1 is smaller than that in the untreated area A2. As a result, the edge portion La of the IPA liquid film L in the drying target area A1 is pulled toward the untreated area A2 (right side in fig. 4) so-called marangoni convection. By the force due to the marangoni convection, the edge portion La of the IPA liquid film L moves to the low temperature side.
At this time, as shown in fig. 4 (b), when the second temperature adjusting unit 62 is moved in the arrow S direction, the drying target area A1 is moved from the position shown in fig. 4 (c) in the arrow S direction. By moving the second temperature adjusting unit 62 in accordance with the rate of accumulation of the IPA liquid film L (the rate of movement of the edge portion La of the IPA liquid film L), accumulation of the IPA liquid film L by the marangoni convection can be advanced, and IPA on the surface of the wafer W can be moved in the direction of arrow S. Accordingly, IPA can be discharged from the surface of the wafer W at the end Wa of the wafer W on the downstream side in the arrow S direction.
The area on the surface of the wafer W to be subjected to the drying process of the IPA liquid film L is "drying target area A1". On the other hand, the area of the surface of the wafer W where the drying treatment of the IPA liquid film L is not performed is "untreated area A2". In the example shown in fig. 4, the drying target region A1 is a region of the surface of the wafer W after the temperature is raised by the second temperature adjusting unit 62, that is, a region in which a temperature gradient is generated, which changes from the temperature T1 to the temperature T2. As described above, in the drying target area A1, the edge portion La of the IPA liquid film L is pulled toward the untreated area A2 side due to the marangoni convection, whereby the end portion of the IPA liquid film L moves. Thus, the position of the drying target region A1 is controlled so as to form a temperature gradient on the surface between the drying target region and the other region of the wafer W, whereby IPA can be accumulated on the surface of the wafer W.
[ Action and Effect ]
In this way, in the substrate processing apparatus 10, the temperature difference is formed between the drying target area A1 and the unprocessed area A2 on the surface of the wafer W by the temperature control performed on the surface of the wafer W by the temperature adjustment unit 60. Specifically, the temperature difference is generated in the IPA liquid film L such that the temperature of the edge La of the IPA liquid film L is high and the temperature of the remaining Lb of the IPA liquid film L is low. Thus, marangoni convection occurs at the edge portion La of the IPA liquid film L. Accordingly, IPA is collected in a predetermined direction (specifically, a side at a low temperature) on the surface of the wafer W, and is discharged from the surface of the wafer W. By adopting a structure in which IPA is collected by marangoni convection to drain IPA from the wafer W surface as described above, it is possible to prevent pattern damage or the like from occurring on the wafer W surface when IPA is removed from the wafer W surface.
As a method for removing IPA from the surface of the wafer W, a method has been conventionally used in which the wafer W is rotated to move IPA to the outer peripheral side by centrifugal force. In this case, the IPA on the surface of the wafer W is subjected to centrifugal force and flows outward. However, when the IPA is moved by an external force as described above, a boundary layer having a very thin liquid thickness is formed at the end of the IPA liquid film. Since the boundary layer is a region where IPA does not move by an external force, the surface of the wafer W is dried only by evaporation of IPA. At this time, the evaporation rate of IPA on the surface of the wafer W is not uniform. In particular, since many patterns W1 are formed on the surface of the wafer W, the deviation of the liquid level of IPA is easily generated due to the shape of the patterns W1. When the evaporation of IPA is performed in a state where the liquid level of IPA is different, a stress difference generated by the liquid level affects the pattern W1, and there is a possibility that the pattern W1 may be broken such as pattern damage.
In contrast, in the substrate processing apparatus 10, IPA on the surface of the wafer W is concentrated by the marangoni convection due to the temperature gradient as described above. That is, when IPA is moved by a difference in surface tension, not by an external force, it is possible to prevent a boundary layer from being generated at the edge portion La of the IPA liquid film L. That is, since the region to be dried by evaporation can be eliminated, breakage of the pattern W1 such as pattern damage can be prevented when IPA is removed. In recent years, the aspect ratio of the pattern W1 formed on the surface of the wafer W has become high, and thus the risk of pattern damage has become high, but the occurrence of pattern damage can be reduced by removing IPA using the above-described marangoni convection. The temperature gradient of the surface of the wafer W may not necessarily be low on the side where the IPA liquid film L is present, but may be high on the side where the IPA liquid film L is not present (the side where the wafer W is exposed). In addition, a desired temperature difference may be generated between the drying target region and the other region (untreated region), and the temperature gradient may not be formed in the untreated region A2 (untreated region).
It is preferable that the surface temperature of the wafer W controlled by the temperature adjusting unit 60 is controlled so as not to promote the volatilization of IPA. In order to generate marangoni convection in IPA, the temperature may be higher than normal temperature (about 23 ℃), and for example, the temperature adjusting unit 60 may be controlled so that the surface temperature of the wafer W becomes 30 ℃. When the surface temperature of the wafer W is too high, volatilization of IPA is promoted more than movement by accumulation of IPA, and the possibility of pattern breakage increases.
In the substrate processing apparatus 10, as shown in fig. 4, the second temperature adjusting unit 62 horizontally moves from one end of the wafer W in the direction of arrow S to accumulate the IPA liquid film L in the direction of arrow S, thereby discharging the IPA from the downstream end Wa in the direction of arrow S. In this way, IPA moves on the surface of the wafer W in the direction of arrow S. In order to promote the movement of the IPA, the wafer W on the holding portion 31 may be slightly inclined (about 0.1 ° to 1 °) so that the end Wa is located on the lower side. As a method of tilting the wafer W on the holding portion 31, a method of generating a so-called axial displacement by moving the position of the pillar portion 32 supporting the holding portion 31 in the lateral direction is exemplified. In this way, the IPA is accelerated to be discharged from the end Wa by slightly tilting the wafer W.
The movement of the second temperature adjusting unit 62, the cooling temperature obtained by the first temperature adjusting unit 61, and the like are changed by the control performed by the control unit 18. The control unit 18 may control each unit of the temperature adjustment unit 60 by executing a program predetermined based on the liquid characteristics of the IPA. The control unit 18 may control the operation of each unit of the temperature adjustment unit 60 to be changed based on, for example, information on the state of the surface of the wafer W acquired by a camera provided in the substrate processing apparatus 10 for observing the surface of the wafer W.
< First modification >
Next, a modification of the temperature adjusting unit 60 will be described. As described above, when a temperature gradient is formed in the vicinity of the edge portion La of the IPA liquid film L so that the temperature of the side where the IPA liquid film L exists is low and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high, marangoni convection occurs in the edge portion La of the IPA liquid film L. By generating this marangoni convection, the IPA liquid film L is accumulated by the surface tension so as not to form a boundary layer. Therefore, the temperature gradient as described above may be formed on the surface of the wafer W, and the configuration of the temperature adjusting unit 60 may be appropriately changed.
Fig. 5 (a) to 5 (c) are diagrams showing a temperature adjustment unit 60A according to a first modification. Fig. 5 (a) to 5 (c) are diagrams corresponding to fig. 4 (a) to 4 (c). The temperature adjustment unit 60A is different from the temperature adjustment unit 60 in the following points. That is, in the temperature adjusting unit 60A, the first temperature adjusting unit 61 provided on the back surface side of the wafer W changes the heating temperature according to the position, thereby forming a temperature gradient on the front surface of the wafer W. That is, the second temperature adjusting portion 62 is not used.
In fig. 5 (b), the heating temperature of the first temperature adjusting portion 61 for each position is represented by a gradation. That is, the heating temperature is controlled by the first temperature adjusting unit 61 so that the heating temperature at the end Wb of the wafer W on the left side in the drawing is high, and the heating temperature is low as going to the end Wc on the right side in the drawing. As a result, as shown in fig. 5 (c), a temperature gradient is formed from the end Wb on the left side toward the end Wc on the right side of the figure with respect to the surface temperature of the wafer W. That is, in the example shown in fig. 5, a temperature gradient is formed in both the drying target area A1 and the untreated area A2.
As a result, as shown in fig. 5 (b), a marangoni convection is generated on the end Wb side of the wafer W in the IPA liquid film L, and the wafer moves toward the end Wc side. Since the surface temperature of the wafer W is entirely temperature-gradient, even if the edge portion La of the IPA liquid film L is moved toward the end Wc side, the edge portion La exists on the drying target area A1. Thus, aggregation and movement of the IPA liquid film L by marangoni convection continues. That is, the temperature gradient formed on the entire surface of the wafer W functions as a temperature gradient having a low temperature on the side where the IPA liquid film L is present and a high temperature on the side where the IPA liquid film L is not present (the side where the end Wb of the wafer W is exposed). As a result, the IPA liquid film L moves toward the end Wc side and is discharged from the end Wc side.
In this way, when the first temperature adjusting unit 61 can control the heating temperature of the wafer W for each different portion, the gradient can be set for the temperature of the surface of the wafer W even if it is not used in combination with the second temperature adjusting unit 62. Accordingly, the movement and discharge of the IPA liquid film L can be controlled by the temperature gradient. With such a configuration, the occurrence of pattern damage can be reduced.
< Second modification >
Fig. 6 (a) to 6 (c) are diagrams showing a temperature adjustment unit 60B according to a second modification. Fig. 6 (a) to 6 (c) are diagrams corresponding to fig. 4 (a) to 4 (c). The temperature adjustment unit 60B is different from the temperature adjustment unit 60 in the following points. That is, in the temperature adjusting portion 60B, instead of using the first temperature adjusting portion 61 provided on the back surface side of the wafer W, a temperature gradient is formed on the front surface of the wafer W using the third temperature adjusting portion 63 arranged in parallel with the second temperature adjusting portion 62. That is, the first temperature adjusting portion 61 is not used.
In the temperature adjustment unit 60B, the third temperature adjustment unit 63 may be a linear heat source or a cooling source extending in the lateral direction (horizontal direction) similarly to the second temperature adjustment unit 62. In the temperature adjusting unit 60B, the second temperature adjusting unit 62 is used as a heat source, and the third temperature adjusting unit 63 is used as a cooling source. As shown in fig. 6 (a) and 6 (b), the second temperature adjusting portion 62 and the third temperature adjusting portion 63 are arranged so as to extend parallel to each other across the edge portion La of the IPA liquid film L, and the third temperature adjusting portion 63 is located on the IPA liquid film L side.
As a result, as shown in fig. 6 (c), a drying target area A1 is formed between the second temperature adjusting portion 62 and the third temperature adjusting portion 63. Since the third temperature adjusting unit 63 as a cooling source is disposed on the IPA liquid film L side, a temperature gradient is formed in the drying target area A1 such that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high. Thus, the edge portion La of the IPA liquid film L moves toward the third temperature adjusting portion 63.
At this time, when the second temperature adjusting portion 62 and the third temperature adjusting portion 63 are moved in the arrow S direction in accordance with the movement of the edge portion La as shown in fig. 6 (b), the drying target area A1 is moved in the arrow S direction from the position shown in fig. 6 (c). By moving the second temperature adjusting portion 62 and the third temperature adjusting portion 63 in accordance with the accumulation speed of the IPA liquid film L (the movement speed of the edge portion La of the IPA liquid film L), accumulation of the IPA liquid film L can be performed by the marangoni convection at the edge portion La. This can move the IPA on the surface of the wafer W in the direction of arrow S. Accordingly, IPA can be discharged from the surface of the wafer W at the end Wa of the wafer W on the downstream side in the arrow S direction.
In this way, even when the temperature adjustment unit 60B is formed by combining the second temperature adjustment unit 62 and the third temperature adjustment unit 63, which are two linear temperature adjustment units, a gradient can be set for the temperature of the surface of the wafer W. Accordingly, the movement and discharge of the IPA liquid film L can be controlled by the temperature gradient. With such a configuration, the occurrence of pattern damage can be reduced.
< Second embodiment >
Next, a second embodiment of the temperature adjusting unit will be described. In the first embodiment, a description has been given of a case where the movement of the IPA liquid film L in one direction (for example, the arrow S direction shown in fig. 4 (b)) is promoted by the marangoni convection of IPA generated by the temperature gradient of the surface of the wafer W. Accordingly, in the first embodiment, IPA is discharged from one end portion (for example, end portion Wa shown in fig. 4 (b)) of the wafer W. In contrast, in the second embodiment, a description will be given of a case where the movement of the IPA liquid film L from the center to the outer periphery of the wafer W is promoted by the marangoni convection of IPA generated by the temperature gradient of the surface of the wafer W. Since the IPA liquid film L is moved in a direction from the center toward the outer periphery, IPA is discharged from any portion of the outer periphery of the wafer W.
The same as the first embodiment is true in that a temperature gradient is formed on the surface of the wafer W. That is, a temperature gradient is formed near the end of the IPA liquid film L such that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high, and marangoni convection occurs at the edge portion La of the IPA liquid film L.
Fig. 7 (a) to 7 (c) and fig. 8 (a) to 8 (c) are diagrams showing a temperature adjusting unit 70 according to the second embodiment. Fig. 7 (a) to 7 (c) and fig. 8 (a) to 8 (c) are diagrams corresponding to fig. 4 (a) to 4 (c), respectively.
The temperature adjusting unit 70 includes a first temperature adjusting unit 71 provided on the back surface side of the wafer W and a second temperature adjusting unit 72 provided on the front surface side of the wafer W.
The first temperature adjustment unit 71 has the same structure as the first temperature adjustment unit 61 of the temperature adjustment unit 60. That is, the first temperature adjusting unit 71 is provided on the back surface side of the wafer W to control the temperature of the entire wafer W. The first temperature adjusting unit 71 may be configured to: the surface temperature of the wafer W is set to have a predetermined gradient by dividing the wafer W into a plurality of zones and performing independent temperature control for each zone, that is, so-called multi-channel control.
The second temperature adjustment unit 72 is a point-type heat source provided so as to be spaced apart from the surface by a predetermined distance in a region including the center of the wafer W (see also fig. 7 (a)). The second temperature adjusting portion 72 heats a region including the center of the surface of the wafer W. As the second temperature adjustment portion 72, a laser or a lamp can be used. However, the structure of the second temperature adjusting portion 72 is not limited thereto. The "region including the center of the surface of the wafer W" heated by the second temperature adjustment portion 72 is a region including the center of the wafer W and having a diameter smaller than the diameter of the wafer W. The diameter of the region including the center of the surface of the wafer W can be set to, for example, 30% or less of the diameter of the wafer W.
The discharge process of discharging IPA using the temperature adjusting unit 70 will be described. Before the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. In the examples shown in fig. 7 (a) to 7 (c), the first temperature adjusting portion 71 functions as a substrate cooling portion that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a fixed temperature by the first temperature adjusting unit 71.
The second temperature adjusting unit 72 functions as a substrate heating unit that heats the vicinity of the center of the wafer W from the front surface side of the wafer W. In the case of discharging IPA, as shown in fig. 7 (b), the second temperature adjusting unit 62 is disposed near the center of the wafer W to heat the surface near the center of the wafer W.
As a result, as shown in fig. 7 (c), the temperature T1 of the region including the center of the surface of the wafer W is higher than the temperature T2 of the outer periphery side separated from the second temperature adjustment portion 72. Thus, a drying target region A1 that changes from the temperature T1 to the temperature T2 is formed between the region including the center of the wafer W at the temperature T1 and the unprocessed region A2 at the temperature T2. When the drying target area A1 is formed, the IPA liquid film L is accumulated in the drying target area A1 toward the area side having a low temperature. In the drying target region A1, the temperature T1 of the region including the center of the wafer W is set to be the center, and gradually decreases toward the outer periphery.
In the drying target area A1, marangoni convection occurs due to a difference in surface tension of the IPA liquid film L. By the force generated by the marangoni convection, the edge portion La (inner peripheral edge) of the IPA liquid film L moves to the low temperature side, i.e., the outer peripheral side of the wafer W.
When the IPA liquid film L is accumulated, as shown in fig. 8 (a) and 8 (b), the edge portion La of the IPA liquid film L gradually moves to the outer peripheral side. On the other hand, when the cooling of the wafer W by the first temperature adjusting portion 71 is continued and the heating of the region including the center of the wafer W by the second temperature adjusting portion 72 is continued, the surface temperature of the region including the center of the wafer W from which the IPA liquid film L has been removed (i.e., dried) is fixed to the temperature T1. On the other hand, the region of the outer periphery where the IPA liquid film L remains is maintained at a temperature T2. As a result, as shown in fig. 8 (c), an annular drying target area A1 is formed in the vicinity of the edge portion La of the IPA liquid film L, that is, in the area where the film thickness of the IPA liquid film L changes. Therefore, marangoni convection is formed near the edge portion La of the IPA liquid film L, and the edge portion La moves toward the outer periphery side of the wafer W. In addition, along with the movement of the edge portion La, the drying target area A1 also moves to the outer peripheral side. As described above, by continuing the movement of the edge portion La of the IPA liquid film L generated by the marangoni convection, IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W.
In this way, even when the temperature adjusting unit 70 is used, the drying target area A1 can be formed by controlling the temperature of the surface of the wafer W. That is, a temperature gradient is formed near the edge La of the IPA liquid film L such that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high. Thus, marangoni convection is generated in the edge portion La of the IPA liquid film L. As a result, IPA can be accumulated on the side of the wafer W where the surface temperature is low, and IPA can be discharged from the surface of the wafer W. Thus, it is possible to prevent pattern damage or the like from occurring on the surface of the wafer W when the IPA is removed from the surface of the wafer W.
In the temperature adjusting unit 70, the heating temperature of the second temperature adjusting unit 72 may be gradually changed in the region including the center of the wafer W as the edge portion La of the IPA liquid film L moves to the outer periphery. That is, the heating temperature obtained by the second temperature adjusting unit 72 can be changed so that the surface temperature of the region of the wafer W where the edge portion La is formed is in a temperature range in which the IPA liquid film is easily formed to cause marangoni convection. In this case, the surface temperature of the region including the center of the wafer W is considered to be higher than the temperature T1, but the surface temperature of the wafer W may be changed appropriately as long as the wafer W is not affected.
< Third modification example >
Next, a modification of the temperature adjusting unit 70 will be described. As described above, when a temperature gradient is formed in the vicinity of the edge portion La of the IPA liquid film L so that the temperature of the side where the IPA liquid film L exists is low and the temperature of the side where the IPA liquid film L does not exist (the side where the wafer W is exposed) is high, marangoni convection occurs in the edge portion La of the IPA liquid film L. By generating this marangoni convection, the IPA liquid film L is accumulated by the surface tension so as not to form a boundary layer. Therefore, the temperature gradient as described above may be formed on the surface of the wafer W, and the configuration of the temperature adjusting unit 70 may be appropriately changed.
Fig. 9 (a) to 9 (c) and fig. 10 (a) to 10 (c) show a temperature adjustment unit 70A according to a third modification. Fig. 9 (a) to 9 (c) and fig. 10 (a) to 10 (c) are diagrams corresponding to fig. 4 (a) to 4 (c), respectively.
The temperature adjustment unit 70A is different from the temperature adjustment unit 70 in the following points. That is, in the temperature adjusting portion 70A, the first temperature adjusting portion 71 provided on the back surface side of the wafer W changes the heating temperature according to the position, thereby forming a temperature gradient on the front surface of the wafer W. That is, the second temperature adjusting portion 72 is not used.
In fig. 9 (b), the heating temperature of the first temperature adjustment unit 71 for each position is shown as a gradient. That is, the heating temperature is controlled by the first temperature adjusting unit 71 so that the heating temperature near the center of the wafer W is high and gradually decreases toward the outer peripheral side. As a result, as shown in fig. 9 (c), the surface temperature of the wafer W has a temperature gradient from the vicinity of the center of the wafer W toward the outer periphery. That is, a temperature gradient is formed over the wafer W. In other words, in the example shown in fig. 9, a temperature gradient is formed in both the drying target area A1 and the untreated area A2.
The temperature adjusting portion 70A has a gas ejecting portion 73 capable of ejecting a gas onto the surface of the wafer W instead of the second temperature adjusting portion 72. The gas ejecting section 73 ejects a gas such as nitrogen onto the surface of the wafer W. By spraying the gas, an opening can be provided in the IPA liquid film L near the center of the wafer W.
The discharge process of discharging IPA using the temperature adjusting unit 70A will be described. Before the IPA discharge process, an IPA liquid film L is formed so as to cover the surface of the wafer W. As described above, the surface temperature of the wafer W gradually decreases from the vicinity of the center toward the outer periphery by the first temperature adjusting portion 71.
Here, the gas spraying portion 73 forms an opening of the IPA liquid film L near the center of the wafer W, thereby exposing the vicinity of the center of the wafer W. That is, the IPA liquid film L near the center of the wafer W is dried. Therefore, the region near the center of the wafer W becomes the drying target region A1, and the region on the outer peripheral side of the drying target region A1 becomes the unprocessed region A2. Thereby, an edge portion La (inner peripheral edge) of the IPA liquid film L is formed in the center of the wafer W. When forming the edge La of the IPA liquid film L, the IPA liquid film L is concentrated toward the region side having a low temperature by the temperature gradient formed on the entire surface of the wafer W. As described above, in the drying target area A1, marangoni convection occurs due to the difference in surface tension of the IPA liquid film L, and thus the edge portion La of the IPA liquid film L moves to the low temperature side, that is, the outer peripheral side of the wafer W.
When the IPA liquid film L is accumulated, as shown in fig. 10 (a) and 10 (b), the edge portion La of the IPA liquid film L gradually moves to the outer peripheral side. When the heating of the wafer W by the first temperature adjusting unit 71 is continued, the surface temperature near the center of the wafer W from which the IPA liquid film L has been removed (i.e., dried) is fixed to a predetermined temperature. On the other hand, as shown in fig. 10 (c), the region of the outer periphery where the IPA liquid film L remains is in a state of a residual temperature gradient. Therefore, marangoni convection is formed near the edge portion La of the IPA liquid film L, and the edge portion La moves toward the outer periphery side of the wafer W. That is, the annular drying target area A1 moves to the outer peripheral side along with the movement of the edge portion La. As described above, by continuing the movement of the edge portion La of the IPA liquid film L generated by the marangoni convection, IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W.
In this way, even when the temperature adjusting unit 70A is used, the drying target area A1 can be formed by controlling the temperature of the surface of the wafer W. That is, a temperature gradient is formed near the edge La of the IPA liquid film L such that the temperature of the side where the IPA liquid film L is present is low and the temperature of the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high. Thus, marangoni convection is generated in the edge portion La of the IPA liquid film L. As a result, IPA can be accumulated on the side of the wafer W where the surface temperature is low, and IPA can be discharged from the surface of the wafer W. Thus, it is possible to prevent pattern damage or the like from occurring on the surface of the wafer W when the IPA is removed from the surface of the wafer W.
In the temperature adjusting unit 70A, the heating temperature obtained by the first temperature adjusting unit 71 may be gradually changed as the edge portion La of the IPA liquid film L moves to the outer periphery. That is, the heating temperature obtained by the first temperature adjusting unit 71 can be changed so that the surface temperature of the region of the wafer W where the edge portion La is formed is in a temperature range in which the IPA liquid film is easily formed to cause marangoni convection.
In the temperature adjusting unit 70A, the heating temperature is controlled by the first temperature adjusting unit 71 so that the heating temperature near the center of the wafer W is high and gradually decreases toward the outer periphery. However, the method of heating the wafer W by the first temperature adjusting unit 71 is not particularly limited as long as the drying target region A1 can be formed in the region where the edge portion La of the IPA liquid film L is formed. For example, even when the first temperature adjusting unit 71 is not arranged in a shape corresponding to the entire surface of the wafer W and the first temperature adjusting unit 71 is arranged only in the vicinity of the center of the wafer W, the annular drying target area A1 can be formed on the surface of the wafer W by controlling the heating temperature. Thus, the formation of the marangoni convection at the edge portion La of the IPA liquid film L and the movement of the IPA liquid film L can be controlled by the drying target area A1.
[ Others ]
The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, substituted or altered in various ways within the scope of the appended claims and their gist.
For example, in the above embodiment, the case where the drying liquid is IPA is described, but the drying liquid is not limited to IPA.
Although the above embodiments and modifications have been described, the configuration and arrangement of the temperature adjusting unit functioning as the substrate heating unit or the substrate cooling unit can be appropriately changed. For example, in the above embodiment, the case where the first temperature adjusting portions 61 and 71 for cooling the entire surface of the wafer W are provided on the back surface side (the holding portion 31 side) of the wafer W has been described, but may be provided on the front surface side of the wafer W.
When viewed from above, not only the different regions (the drying target region A1 and the unprocessed region A2) on the surface of the wafer W may be subjected to a temperature difference, but also the IPA liquid film L may be subjected to a temperature difference in the vertical direction (the height direction of the IPA liquid film L). For example, as shown in fig. 11 and 12, the temperature adjustment unit 60 may include a first temperature adjustment unit 61 disposed on the back surface side of the wafer W and a fourth temperature adjustment unit 64 (low-temperature member) disposed on the front surface side of the wafer W. The fourth temperature adjusting unit 64 is configured to move along the surface of the wafer W above the wafer W. The fourth temperature adjustment unit 64 may be set to a temperature lower than the temperature of the first temperature adjustment unit 61 for heating the wafer W. That is, the fourth temperature adjusting unit 64 may be set to a temperature lower than the temperature of the wafer W heated by the first temperature adjusting unit 61. As a result, a temperature difference is generated between the upper portion of the IPA liquid film L that contacts the fourth temperature adjusting portion 64 and the lower portion of the IPA liquid film L that contacts the wafer W, and the surface tension acting on the upper portion is relatively increased (the marangoni phenomenon). Accordingly, the IPA liquid film L is pulled toward the fourth temperature adjusting portion 64. Accordingly, the control unit 18 controls the operation of the fourth temperature adjustment unit 64 so that the fourth temperature adjustment unit 64 moves along the surface of the wafer W (see arrow S in fig. 11 and 12), and thereby the IPA liquid film L also moves along the surface of the wafer W along with the fourth temperature adjustment unit 64. As a result, the control unit 18 can appropriately control the movement direction and the movement speed of the fourth temperature adjustment unit 64, and can discharge IPA from the surface of the wafer W in a desired path and speed.
As shown in fig. 11, the fourth temperature adjusting portion 64 has a mesh shape. In this case, as shown in fig. 11 (b), IPA is adsorbed in the space of the mesh due to capillary phenomenon. Accordingly, the IPA liquid film L is easily moved along with the fourth temperature adjusting portion 64, and thus the IPA can be more effectively discharged from the surface of the wafer W.
As shown in fig. 12 (a), the fourth temperature adjustment portion 64 may be constituted by one or a plurality of rod-like bodies. The rod-shaped body may be linear, curved, or serpentine. In the case where the fourth temperature adjustment unit 64 is constituted by a plurality of rod-like bodies, the plurality of rod-like bodies may be arranged substantially in parallel and may be moved in the direction of the arrangement. Even when the fourth temperature adjusting portion 64 is constituted by a plurality of rod-like bodies, IPA is adsorbed in the space of the mesh due to capillary phenomenon. Accordingly, the IPA liquid film L is easily moved along with the fourth temperature adjusting portion 64, and thus the IPA can be more effectively discharged from the surface of the wafer W.
As shown in fig. 12 (b), the fourth temperature adjustment unit 64 may be constituted by a plate-like body. The plate-like body may have a flat plate shape or may have the same shape as the wafer W. The lower surface of the plate-like body facing the surface of the wafer W may have a concave-convex shape. Even when the lower surface of the plate-like body is uneven, IPA is adsorbed in the space of the mesh due to capillary phenomenon. Accordingly, the IPA liquid film L is easily moved along with the fourth temperature adjusting portion 64, and thus the IPA can be more effectively discharged from the surface of the wafer W.
Although not shown, the fourth temperature adjusting portion 64 may have a shape other than the above-described shape, such as a ring shape. The fourth temperature adjustment unit 64 may be linearly movable above the wafer W, or may be rotatable above the wafer W by rotating about a predetermined vertical axis.
The plurality of patterns W1 formed on the surface of the wafer W may be regularly arranged in a predetermined direction. For example, as shown in fig. 13, when the plurality of patterns W1 are each substantially rectangular parallelepiped in shape when viewed from above, the plurality of patterns W1 may each extend in a predetermined direction (left-right direction in fig. 13). In this case, a temperature gradient may be formed on the surface of the wafer W so that the drying target area A1 moves along the shape of the pattern W1 to the unprocessed area A2. For example, in the case where the temperature adjustment unit 60 includes the first temperature adjustment unit 61 and the second temperature adjustment unit 62 according to the first embodiment described above, the second temperature adjustment unit 62 may be moved along the shape of the pattern W1, may be moved along the longitudinal direction of the pattern W1, and may be moved along the short side direction of the pattern W1. When the IPA moves along the shape of the pattern W1, the discharge of the IPA is not easily blocked by the pattern W1. Therefore, even if the pattern W1 is formed on the surface of the wafer W, the movement of the IPA is smooth, and the pattern W1 can be prevented from being broken when the IPA is discharged from the surface of the wafer W.
In order to form a temperature gradient on the surface of the wafer W so that the drying target area A1 moves along the shape of the pattern W1 to the unprocessed area A2, the substrate processing apparatus 10 may further include an acquisition unit configured to acquire the shape of the pattern W1. The acquisition unit may include an imaging unit configured to capture a surface of the wafer W, and a processing unit configured to determine a shape of the pattern W1 by performing image processing on an imaged image of the surface of the wafer W captured by the imaging unit. When a notch is formed in the wafer W and the directivity of the pattern W1 is predetermined with respect to the notch, the acquisition unit may be configured to acquire the position of the notch. The notch portion may be, for example, a notch (a groove of a U-shape, a V-shape, or the like), or may be a linear portion (a so-called positioning plane) extending linearly. For example, the control unit 18 may be configured to determine a discharge direction of the IPA from the surface of the wafer W based on the shape of the pattern W1 acquired by the acquisition unit. In this case, a temperature gradient is formed on the surface of the wafer W so that the IPA liquid film L moves from the drying target area A1 to the unprocessed area A2 in the determined discharge direction. Therefore, the direction of the discharge of the IPA can be automatically determined according to the shape of the pattern W1.
The substrate processing apparatus 10 may further include a surrounding member configured to surround the wafer W by being arranged in a manner close to a periphery of the wafer W. The upper surface of the surrounding member may be located at a height position substantially equal to the surface of the wafer W and extend in the horizontal direction. The upper surface of the surrounding member may be an inclined surface inclined downward from an inner peripheral edge located at a height position substantially equal to the surface of the wafer W toward an outer peripheral edge. The surrounding member may be set to a temperature lower than that of the wafer W. The substrate processing apparatus 10 may further include a gas supply portion configured to blow a gas set to a temperature lower than that of the wafer W toward the upper surface of the surrounding member.
In any of the above examples, the wafer W may be inclined in the direction of movement of the IPA (the direction of movement of the drying target area A1) to promote the movement of the IPA.
Exemplary embodiments
Example 1: in one exemplary embodiment, a substrate processing apparatus includes: a substrate holding unit that holds a substrate; a drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit; a temperature adjustment unit that changes the surface temperature of the substrate; and a control unit that controls the temperature adjustment unit. The control unit controls the temperature adjustment unit so that a temperature difference is generated in a liquid film of the drying liquid supplied to the surface of the substrate. As described above, when a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate, marangoni convection is caused in the region where the temperature difference is generated in the liquid film, and the drying liquid moves by the marangoni convection. Thus, the drying liquid can be discharged from the substrate surface by the movement of the drying liquid. With such a configuration, the influence of the pattern on the substrate surface can be reduced as compared with the case where the drying liquid is discharged from the substrate surface by an external force, and the pattern breakage can be prevented from occurring when the drying liquid is removed from the substrate surface.
Example 2: in the apparatus of example 1, the surface of the substrate includes a drying target region to be subjected to the drying process and an untreated region to which the drying process is not performed, and the control unit may control the temperature adjustment unit so that a temperature difference occurs between the drying target region and the untreated region. In this case, marangoni convection occurs in a region between the drying target region and the untreated region in the liquid film, and the drying liquid moves by the marangoni convection. Therefore, the drying liquid can be discharged from the substrate surface by utilizing the movement of the drying liquid.
Example 3: in the apparatus of example 2, the temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate heating unit may be configured to change a heating position on the surface of the substrate by moving a linear heat source along the surface of the substrate. By using the substrate heating section for moving the linear heat source along the surface of the substrate, the region where the marangoni convection occurs can be finely controlled, and drying liquid can be appropriately removed.
Example 4: in the apparatus according to example 2 or example 3, the temperature adjustment unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate cooling unit may be configured to cool the entire surface of the substrate. In the case of a structure in which the entire surface of the substrate is cooled by the substrate cooling unit, the temperature gradient can be formed in the region where the marangoni convection occurs by using the substrate heating unit while maintaining the entire substrate at a predetermined temperature, so that the drying liquid can be properly removed.
Example 5: in the apparatus of example 3, the substrate cooling unit may be configured such that the linear cooling source cools the substrate along the surface of the substrate in parallel with the substrate heating unit. In the case of the above-described aspect, the substrate cooling unit and the substrate cooling unit can be combined to form a temperature gradient in a desired region where marangoni convection occurs, so that the drying liquid can be appropriately removed.
Example 6: in any of examples 2 to 5, the control unit may be configured to: the temperature gradient is formed on the surface of the substrate by controlling the temperature adjusting unit so that the liquid film moves from the drying target region to the unprocessed region. By forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the other region, the movement of the drying liquid due to the temperature gradient formed on the surface of the substrate becomes smooth, and it is possible to prevent pattern breakage when the drying liquid is removed from the surface of the substrate.
Example 7: in the apparatus according to example 6, a pattern having a predetermined shape may be formed on the surface of the substrate, and the control unit may control the temperature adjustment unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to the unprocessed area along the shape of the pattern. In this case, the drying liquid moves along the shape of the pattern, and thus the discharge of the drying liquid is not easily obstructed by the pattern. Therefore, even if a pattern is formed on the surface of the substrate, the movement of the drying liquid becomes smooth, and the pattern breakage at the time of discharging the drying liquid from the surface of the substrate can be prevented.
Example 8: in the apparatus of example 2, the following means may be employed: the temperature adjustment unit includes a substrate heating unit that heats a part of the surface of the substrate, and the control unit increases the heating amount of the heating unit with the passage of time for forming a temperature gradient on the surface of the substrate. By using such a substrate heating section, a temperature gradient can be formed in a desired region where marangoni convection occurs, and thus drying liquid can be properly removed.
Example 9: in the apparatus of example 1, the temperature adjustment portion may include a low temperature member whose temperature is set to be lower than the temperature of the substrate, and the control portion may control the temperature adjustment portion so as to move the low temperature member along the surface of the substrate above the substrate in a state where the low temperature member is in contact with the liquid film. In this case, the temperature of the portion of the liquid film in contact with the low-temperature member is lower than the temperature of the portion of the liquid film in contact with the substrate, and the surface tension is relatively increased (marangoni phenomenon). Thus, the liquid film is pulled toward the cryogenic member. Thus, by moving the low temperature member along the surface of the substrate, the liquid film also moves along the surface of the substrate with the low temperature member. As a result, the movement direction and the movement speed of the low-temperature member can be appropriately controlled, and the drying liquid can be discharged from the substrate surface at a desired path and speed.
Example 10: in any of the apparatuses of examples 1 to 9, the substrate holding portion may be configured to be capable of tilting the substrate. By adopting a structure in which the substrate can be tilted, movement of the drying liquid by the marangoni convection can be promoted, and therefore, the removal rate of the drying liquid can be accelerated.
Example 11: in the apparatus of example 2, the temperature adjustment unit may be configured as follows: comprises a substrate cooling part for cooling the whole surface of the substrate and a substrate heating part for heating the region containing the center of the substrate. The entire surface of the substrate is cooled by the substrate cooling unit, and the region including the center of the substrate is heated by the substrate heating unit, whereby a temperature gradient extending in an annular shape from the region including the center of the substrate can be formed. Therefore, the drying liquid can be moved in the outer circumferential direction of the substrate by the marangoni convection, and the drying liquid can be removed appropriately.
Example 12: in the substrate processing apparatus according to example 2, the temperature adjustment unit may include a substrate heating unit that forms the following temperature gradient: the heating temperature of the region including the center of the substrate is highest, and the heating temperature becomes lower as going to the outer periphery. By using the substrate heating section described above, a temperature gradient can be formed that extends in an annular shape from a region including the center of the substrate. Therefore, the drying liquid can be moved in the outer circumferential direction of the substrate by the marangoni convection, and the drying liquid can be removed appropriately.
Example 13: in other exemplary embodiments, a substrate processing method includes: supplying a drying liquid to the surface of the substrate held by the substrate holding portion; and discharging the drying liquid from the surface of the substrate by generating a temperature difference in the liquid film of the drying liquid. In this case, the same operational effects as in example 1 are exhibited.
Example 14: in the method of example 13, the surface of the substrate on which the liquid film is formed may include a drying target region to be dried and an untreated region not dried, and the step of discharging the drying liquid may include: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region. In this way, the movement of the liquid film of the drying liquid can be finely controlled by the temperature gradient, and thus the drying liquid can be properly removed.
Example 15: in the method of example 14, the step of forming a pattern having a predetermined shape on the surface of the substrate and discharging the drying liquid may include: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region along the shape of the pattern. In this case, the same operational effects as in example 7 are obtained.
Example 16: the method of example 15 may further include the steps of: the step of determining the discharge direction of the drying liquid by obtaining the shape of the pattern, and discharging the drying liquid comprises the steps of: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region in the determined discharge direction. In this case, the discharge direction of the drying liquid can be automatically set according to the shape of the pattern.
Example 17: in any of the methods of examples 14 to 16, the step of discharging the drying liquid may include: the heating position is moved from one side to the other side of the peripheral edge of the substrate, whereby the liquid film of the drying liquid is moved. In this way, the drying liquid can be discharged by moving the heating position from one side to the other side of the peripheral edge portion of the substrate. Thus, the drying liquid can be properly removed.
Example 18: in other exemplary embodiments, a program for causing an apparatus to execute any of the methods of examples 13 to 17 may be recorded on a computer-readable storage medium. In this case, the same operational effects as those of the substrate processing method described above are exhibited. In this specification, a storage medium readable by a computer includes a non-transitory tangible medium (non-transitory computer recording medium: a non-transitory computer recording medium) (e.g., various main storage devices or auxiliary storage devices), a propagated signal (transitory computer recording medium: a transitory computer recording medium) (e.g., a data signal capable of being provided via a network).

Claims (14)

1. A substrate processing apparatus comprising:
A substrate holding unit that holds a substrate;
a drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit;
a temperature adjustment unit that changes a surface temperature of the substrate; and
A control unit for controlling the temperature adjustment unit,
Wherein the control unit controls the temperature adjustment unit so that a temperature difference is generated in a liquid film of the drying liquid supplied to the surface of the substrate,
The surface of the substrate includes a drying target region to be subjected to drying treatment and an untreated region to be not subjected to drying treatment, and the temperature adjustment unit includes a substrate heating unit that heats the substrate, and the substrate heating unit changes a heating position in the surface of the substrate by moving a linear heat source along the surface of the substrate to form a temperature gradient on the surface of the substrate, thereby moving the liquid film from the drying target region to the untreated region.
2. The substrate processing apparatus according to claim 1, wherein,
The control unit controls the temperature adjustment unit so that a temperature difference is generated between the drying target region and the untreated region.
3. The substrate processing apparatus according to claim 2, wherein,
The temperature adjusting section further includes a substrate cooling section that cools the substrate.
4. The substrate processing apparatus according to claim 3, wherein,
The substrate cooling unit cools the entire surface of the substrate.
5. The substrate processing apparatus according to claim 3, wherein,
The substrate cooling unit cools the substrate along the surface of the substrate in parallel with the substrate heating unit by using a linear cooling source.
6. The substrate processing apparatus according to claim 1, wherein,
A pattern of a predetermined shape is formed on the surface of the substrate,
The control unit controls the temperature adjustment unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region along the shape of the pattern.
7. The substrate processing apparatus according to claim 2, wherein,
The temperature adjustment unit includes a substrate heating unit that heats a part of a surface of a substrate, and the control unit increases a heating amount of the heating unit with the passage of time for forming a temperature gradient on the surface of the substrate.
8. The substrate processing apparatus according to claim 1, wherein,
The temperature adjustment section includes a low temperature member whose temperature is set to be lower than the substrate temperature,
The control unit controls the temperature adjustment unit to move the low-temperature member along the surface of the substrate above the substrate in a state where the low-temperature member is in contact with the liquid film.
9. The substrate processing apparatus according to any one of claims 1 to 8, wherein,
The substrate holding portion can tilt the substrate.
10. A substrate processing method comprising the steps of:
Supplying a drying liquid to the surface of the substrate held by the substrate holding portion; and
The drying liquid is discharged from the surface of the substrate by generating a temperature difference in the liquid film of the drying liquid,
Wherein the surface of the substrate includes a drying target area as a target of drying treatment and an untreated area not subjected to drying treatment, and
The step of discharging the drying liquid includes: the liquid film is moved from the drying target region to the unprocessed region by changing a heating position in the surface of the substrate by moving a linear heat source along the surface of the substrate to form a temperature gradient on the surface of the substrate.
11. The method for processing a substrate according to claim 10, wherein,
A pattern of a predetermined shape is formed on the surface of the substrate,
The step of discharging the drying liquid includes: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the untreated region along the shape of the pattern.
12. The method for processing a substrate according to claim 11, wherein,
The method also comprises the following steps: determining the discharge direction of the drying liquid by acquiring the shape of the pattern,
The step of discharging the drying liquid includes: a temperature gradient is formed on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region in the determined discharge direction.
13. The method for treating a substrate according to any one of claims 10 to 12, wherein,
The step of discharging the drying liquid includes: the liquid film of the drying liquid is moved by moving the heating position from one side to the other side of the peripheral edge portion of the substrate.
14. A storage medium readable by a computer, recorded with a program for causing an apparatus to execute the method according to any one of claims 10 to 13.
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