CN1110859C - 双极型晶体管及其制造方法 - Google Patents
双极型晶体管及其制造方法 Download PDFInfo
- Publication number
- CN1110859C CN1110859C CN97110996A CN97110996A CN1110859C CN 1110859 C CN1110859 C CN 1110859C CN 97110996 A CN97110996 A CN 97110996A CN 97110996 A CN97110996 A CN 97110996A CN 1110859 C CN1110859 C CN 1110859C
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- Prior art keywords
- base
- region
- emitter
- bipolar transistor
- transistor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004020 conductor Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000615 nonconductor Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/009—Bi-MOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/641,393 US5646055A (en) | 1996-05-01 | 1996-05-01 | Method for making bipolar transistor |
US641,393 | 1996-05-01 | ||
US641393 | 1996-05-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1170238A CN1170238A (zh) | 1998-01-14 |
CN1110859C true CN1110859C (zh) | 2003-06-04 |
Family
ID=24572179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97110996A Expired - Fee Related CN1110859C (zh) | 1996-05-01 | 1997-04-29 | 双极型晶体管及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5646055A (zh) |
EP (1) | EP0805497B1 (zh) |
JP (1) | JPH1050721A (zh) |
CN (1) | CN1110859C (zh) |
DE (1) | DE69732318T2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6559011B1 (en) * | 2000-10-19 | 2003-05-06 | Muhammed Ayman Shibib | Dual level gate process for hot carrier control in double diffused MOS transistors |
US6790722B1 (en) | 2000-11-22 | 2004-09-14 | International Business Machines Corporation | Logic SOI structure, process and application for vertical bipolar transistor |
US6670255B2 (en) * | 2001-09-27 | 2003-12-30 | International Business Machines Corporation | Method of fabricating lateral diodes and bipolar transistors |
GB0318146D0 (en) * | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
KR100623633B1 (ko) * | 2004-05-19 | 2006-09-18 | 이태복 | 고 내압용 반도체 소자의 제조방법 |
JP4458112B2 (ja) * | 2007-04-18 | 2010-04-28 | 株式会社日立製作所 | 半導体装置の製造方法、それを用いた半導体装置及びプラズマパネルディスプレイ |
US20100117153A1 (en) * | 2008-11-07 | 2010-05-13 | Honeywell International Inc. | High voltage soi cmos device and method of manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0036319A1 (en) * | 1980-03-19 | 1981-09-23 | Hitachi, Ltd. | Semiconductor device |
US4966858A (en) * | 1989-11-02 | 1990-10-30 | Motorola, Inc. | Method of fabricating a lateral semiconductor structure including field plates for self-alignment |
WO1994027324A1 (en) * | 1993-05-18 | 1994-11-24 | Asea Brown Boveri Ab | A lateral bipolar transistor with variable base width and a method for controlling the base width |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923553A (en) * | 1969-10-14 | 1975-12-02 | Kogyo Gijutsuin | Method of manufacturing lateral or field-effect transistors |
US4050965A (en) * | 1975-10-21 | 1977-09-27 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous fabrication of CMOS transistors and bipolar devices |
US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
US4546536A (en) * | 1983-08-04 | 1985-10-15 | International Business Machines Corporation | Fabrication methods for high performance lateral bipolar transistors |
US5264719A (en) * | 1986-01-07 | 1993-11-23 | Harris Corporation | High voltage lateral semiconductor device |
US4916083A (en) * | 1987-05-11 | 1990-04-10 | International Business Machines Corporation | High performance sidewall emitter transistor |
JP3097092B2 (ja) * | 1989-04-21 | 2000-10-10 | 日本電気株式会社 | Bi―CMOS集積回路およびその製造方法 |
US5070381A (en) * | 1990-03-20 | 1991-12-03 | Texas Instruments Incorporated | High voltage lateral transistor |
JP3163092B2 (ja) * | 1990-08-09 | 2001-05-08 | 株式会社東芝 | 半導体装置の製造方法 |
JP2842682B2 (ja) * | 1990-11-08 | 1999-01-06 | シャープ株式会社 | 半導体装置の製造方法 |
US5298786A (en) * | 1990-12-06 | 1994-03-29 | International Business Machines Corp. | SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same |
US5389561A (en) * | 1991-12-13 | 1995-02-14 | Sony Corporation | Method for making SOI type bipolar transistor |
US5416031A (en) * | 1992-09-30 | 1995-05-16 | Sony Corporation | Method of producing Bi-CMOS transistors |
US5444004A (en) * | 1994-04-13 | 1995-08-22 | Winbond Electronics Corporation | CMOS process compatible self-alignment lateral bipolar junction transistor |
US5449627A (en) * | 1994-12-14 | 1995-09-12 | United Microelectronics Corporation | Lateral bipolar transistor and FET compatible process for making it |
-
1996
- 1996-05-01 US US08/641,393 patent/US5646055A/en not_active Expired - Lifetime
-
1997
- 1997-04-16 EP EP97106234A patent/EP0805497B1/en not_active Expired - Lifetime
- 1997-04-16 DE DE69732318T patent/DE69732318T2/de not_active Expired - Fee Related
- 1997-04-21 JP JP9117547A patent/JPH1050721A/ja active Pending
- 1997-04-29 CN CN97110996A patent/CN1110859C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0036319A1 (en) * | 1980-03-19 | 1981-09-23 | Hitachi, Ltd. | Semiconductor device |
US4966858A (en) * | 1989-11-02 | 1990-10-30 | Motorola, Inc. | Method of fabricating a lateral semiconductor structure including field plates for self-alignment |
WO1994027324A1 (en) * | 1993-05-18 | 1994-11-24 | Asea Brown Boveri Ab | A lateral bipolar transistor with variable base width and a method for controlling the base width |
Non-Patent Citations (2)
Title |
---|
IEE TRANSACTIONS ON ELECTRON DEVICES VOL.42 NO.9 XP000518964 1995-09-01 OLSSON J ET AL HIGH CURRENT GAIN HYBRID LATERAL BIPOLAR OPERATION OF DMOS TRANSISTORS * |
OLSSON J., ET AL.: "HIGH CURRENT GAIN HYBRID LATERAL BIPOLAR OPERATION OF DMOS TRANSISTORS.", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ., US, vol. 42., no. 09., 1 September 1995 (1995-09-01), US, pages 1628 - 1635., XP000518964, ISSN: 0018-9383, DOI: 10.1109/16.405277 * |
Also Published As
Publication number | Publication date |
---|---|
DE69732318D1 (de) | 2005-03-03 |
EP0805497A1 (en) | 1997-11-05 |
US5646055A (en) | 1997-07-08 |
CN1170238A (zh) | 1998-01-14 |
DE69732318T2 (de) | 2005-06-16 |
EP0805497B1 (en) | 2005-01-26 |
JPH1050721A (ja) | 1998-02-20 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040813 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040813 Address after: Texas in the United States Patentee after: FreeScale Semiconductor Address before: Illinois Instrunment Patentee before: Motorola, Inc. |
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C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030604 Termination date: 20150429 |
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EXPY | Termination of patent right or utility model |