CN110783396A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN110783396A
CN110783396A CN201910654076.9A CN201910654076A CN110783396A CN 110783396 A CN110783396 A CN 110783396A CN 201910654076 A CN201910654076 A CN 201910654076A CN 110783396 A CN110783396 A CN 110783396A
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semiconductor device
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CN110783396B (zh
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古田建一
神戸敏文
折田敏幸
井上刚
米仓智子
原口正博
竹下佳伸
近藤清文
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Lapis Semiconductor Co Ltd
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Abstract

本发明提供一种半导体装置，具有场板，抑制布局面积的增大且耐压的降低得到抑制。半导体装置包括：第一导电型的半导体基板，在主面具有单元区域及包围单元区域的外周区域；与第一导电型不同的第二导电型的第一扩散层，配置于外周区域，包围单元区域；电极，配置于外周区域，经由设于绝缘构件的开口部而与主面接触，并连接于第一扩散层；第一导电型的第二扩散层，从相对于主面而垂直的方向观看时，在由电极包含在内的区域的主面远离第一扩散层而形成，包含具有第一宽度的直线部、具有较第一宽度更宽的第二宽度的部分的屈曲部。

Description

半导体装置
技术领域
本发明涉及一种半导体装置、特别是高耐压的半导体装置的周边结构。
背景技术
高耐压用途的半导体装置中，有时为了实现耐压的改善而设置场板(fieldplate)。所谓场板为控制电场的分布的电极状构成，且通常是为了避免电场集中的电场弛豫而设置。
作为与场板有关的文献，例如已知有专利文献1。专利文献1中公开了一种电力用半导体元件，其特征在于具备：第一导电型的集电极区域；第二导电型的基极区域，形成于集电极区域内；至少一个场强化区域，在集电极区域内与基极区域隔开规定距离而形成，以与集电极区域相同的第一导电型而形成，且较集电极区域更高浓度地形成；以及场板，介隔绝缘膜而形成于基极区域与集电极区域的接合部和场强化区域上。即，专利文献1中公开了下述发明，通过在高耐压半导体装置的场板的下部设置场强化区域，而将电场的集中区域分散，使高耐压半导体装置的周边结构的击穿(breakdown)耐压提升。
[现有技术文献]
[专利文献]
[专利文献1]日本专利特开平10-335631号公报
发明内容
[发明所要解决的问题]
如上文所述，专利文献1中公开了在场板的下部设置场强化区域，实现半导体装置的耐压提升。但是，专利文献1的电力用半导体元件的主要着眼于相对于基板面而垂直的方向的截面结构，而非利用半导体装置的平面布局来使耐压提升的构想。在现今那样推进半导体装置的高集成化的趋势下，将半导体层的布局面积、特别是周边区域的布局面积的增加抑制于最小限度并且使耐压提升成为紧要问题。
本发明是鉴于所述问题而成，其目的在于提供一种半导体装置，所述半导体装置具有场板，且抑制布局面积的增大并且耐压的降低得到抑制。
[解决问题的技术手段]
本发明的半导体装置包括：第一导电型的半导体基板，在主面包括单元区域及包围所述单元区域的外周区域；与所述第一导电型不同的第二导电型的第一扩散层，配置于所述外周区域内，包围所述单元区域；电极，配置于所述外周区域内，经由设于绝缘构件的开口部而与所述主面接触，并且连接于所述第一扩散层；以及所述第一导电型的第二扩散层，从相对于所述主面而垂直的方向观看时，在由所述电极包含在内的区域的所述主面中远离所述第一扩散层而形成，且包含具有第一宽度的直线部、及具有较所述第一宽度更宽的第二宽度的部分的屈曲部。
另一方面，本发明的其他实施方式的半导体装置包括：第一导电型的半导体基板，在主面包括单元区域及包围所述单元区域的外周区域；与所述第一导电型不同的第二导电型的第一扩散层，配置于所述外周区域内，包围所述单元区域；电极，配置于所述外周区域内，经由设于绝缘构件的开口部而与所述主面接触，并且连接于所述第一扩散层；以及所述第一导电型的第二扩散层，从相对于所述主面而垂直的方向观看时，在由所述电极包含在内的区域的所述主面中远离所述第一扩散层而形成，且包含具有第一杂质浓度的直线部、及具有低于所述第一杂质浓度的第二杂质浓度的屈曲部。
[发明的效果]
根据本发明而发挥下述效果，即：提供一种具有场板，且抑制布局面积的增大并且耐压的降低得到抑制的半导体装置。
附图说明
图1(a)及图1(b)表示实施方式的半导体装置的构成的一例，图1(a)为平面图，图1(b)为截面图。
图2(a)～图2(c)表示第一实施方式的电场弛豫结构体的构成的一例，图2(a)为平面图，图2(b)、图2(c)为截面图。
图3为表示第一实施方式的变形例的电场弛豫结构体的构成的一例的平面图。
图4为表示第二实施方式的电场弛豫结构体的构成的一例的平面图。
具体实施方式
以下参照附图对本发明的实施方式进行详细说明。
[第一实施方式]
图1(a)为表示本实施方式的半导体装置1的构成的平面图，图1(b)为沿着图1(a)的X-X线的截面图。本实施方式中，半导体装置1构成具有矩形形状的主面的平面型且NPN型的双极晶体管(bipolar transistor)。
集电极层11是通过在N型的半导体基板(图示省略)中以高浓度掺杂锑等添加杂质而形成的N型半导体层，构成晶体管的集电极区域。集电极层11形成于半导体装置1的背面侧。外延层12是在集电极层11的表面通过例如使硅烷化合物与磷化合物在高温下进行分解反应的气相成长法而形成的、浓度相对较低的N型半导体层。
基极扩散层13是通过在外延层12的表面介隔图案化用的遮罩(图示省略)添加硼等后，使杂质热扩散而形成的P型半导体层，构成晶体管的基极区域。发射极扩散层14是通过在基极扩散层13的表面介隔图案化用的遮罩(图示省略)使磷等添加杂质热扩散而形成的、浓度相对较高的N型半导体层。俯视时，基极扩散层13以包围整个发射极扩散层14的方式形成。基极扩散层13及发射极扩散层14具有多边形形状，此多边形形状所具有的边沿着具有矩形形状的半导体装置1的边，但为了将反向偏压时的电场集中弛豫，各角落部以描画平缓的弧的方式而弯曲。
发射极电极15包含铝等导电体，以覆盖发射极扩散层14的表面的方式形成。基极电极16与发射极电极15同样地，包含铝等导电体且以覆盖基极扩散层13的表面的方式形成。在发射极电极15与基极电极16之间设有例如SiO2等的绝缘膜17，发射极电极15与基极电极16电分离。
如图1(a)所示，半导体装置1中，在矩形形状的主面18(参照图2(b)、图2(c))中发射极电极15及基极电极16露出。发射极电极15具有与发射极扩散层14的形状大致相同的形状，各角落部以描画平缓的弧的方式弯曲。而且，发射极电极15构成用于使其自身连接键合线(bonding wire)的键合垫(bonding pad)。另一方面，基极电极16沿基极扩散层13的外缘而形成，具有包围整个发射极电极15的环状图案，并且具有用于连接对所述环状图案连接的键合线的键合垫16a。基极电极16也与发射极电极15同样地，各角落部以描画平缓的弧的方式弯曲。在基极电极16的外侧，例如SiO2等绝缘膜17延伸。
本实施方式的半导体装置1中，基极扩散层13及基极电极16的内侧的区域被设为进行晶体管动作的活性区域A1，基极扩散层的外侧的区域被设为非活性区域A2。此外，本实施方式中，所谓活性区域是指进行用于发挥半导体装置的主要功能的动作的区域，所谓非活性区域是指活性区域的周围的、并非与半导体装置的功能直接相关的区域。本实施方式的半导体装置1中，划分活性区域A1的外缘的基极扩散层13及基极电极16如上文所述那样，各角落部以带弧度的方式弯曲。此外，活性区域A1、非活性区域A2分别为本发明的“单元区域”、“外周区域”的一例。
半导体装置1中还具备电场弛豫结构体50。如后述那样，电场弛豫结构体50包含形成于半导体装置1的主面18的扩散层、及具有作为场板的功能的电极。本实施方式的电场弛豫结构体50如图1(a)、图1(b)所示，沿基极电极16的外周配置成环状。
参照图2(a)～图2(c)对本实施方式的电场弛豫结构体50进行更详细说明。图2(a)为将电场弛豫结构体50中图1(a)所表示的区域S的部分放大表示的平面图。而且，图2(b)为沿着图2(a)的A-A线的截面图，图2(c)为沿着图2(a)的B-B线的截面图。电场弛豫结构体50形成于图1(b)所示的非活性区域A2。此外，对于图1(a)所示的区域S以外的三个角部(角落部)，也配置有与图2(a)～图2(c)相同构成的电场弛豫结构体50。
如图2(a)所示，电场弛豫结构体50是包含形成于相对较接近活性区域A1的位置的P型扩散层52、沿P型扩散层52的外周形成的N型扩散层54、及场板56而构成。本实施方式中，N型扩散层54的杂质浓度高于外延层12的杂质浓度。P型扩散层52与场板56经由设于绝缘膜17的开口部中形成的接点58而连接。如图2(b)所示，P型扩散层52及N型扩散层54形成于N型的外延层12内。此外，图2(a)的R1、R6表示场板56的平面观看时的两端部的半径，R2、R3表示P型扩散层52的两端部的半径，R4、R5表示N型扩散层54的两端部的半径。图2(a)中，半径R1、R2、R3、R4的中心位于相同位置，半径R5、R6的中心位于相同位置。
此处，作为使半导体装置的耐压提升的方法，有将在半导体装置的各部产生的电场集中弛豫等方法。其原因在于，电场集中与对所述集中部分施加的电压变高等效。另一方面，作为将电场集中弛豫的方法，有将半导体装置内产生的耗尽层放大而使电场分散的方法，作为使电场分散的技术，已知有保护环(guard ring)、场板等技术。
一般而言，当N型扩散层与P型扩散层接触时形成PN接合，当对PN接合施加反向偏压时产生耗尽层。虽然耗尽层在P型扩散层的端部缩小，但若自端部空开若干距离而配置另一P型扩散层，则PN接合的界面横向延伸，耗尽层向外扩展，因而能够将电场集中弛豫。此时的P型扩散层一般被称为保护环。本实施方式的P型扩散层52具有作为所述保护环的功能，使在P型的基极扩散层13与N型的外延层12之间形成的耗尽层从P型的基极扩散层13延伸。
场板的主要功能也在于扩大耗尽层。所谓场板，是在半导体基板的主面18形成与金属氧化物半导体(Metal Oxide Semiconductor，MOS)器件类似的构成而使耗尽层横向延伸的技术。通过在耗尽层容易缩小的P型扩散层(本实施方式中为基极扩散层13)的一端形成MOS类似结构，并施加较N型扩散层(本实施方式中为集电极层11)低的电压的反向偏压，由此使MOS类似结构正下方耗尽从而使耐压提升。本实施方式的场板56具有这种功能，使耗尽层扩大而使电场分布分散。场板56例如是在配线工序中由铝等材料所形成。
另一方面，从电场的集中弛豫等观点来看，优选使用P型扩散层52、场板56使耗尽层扩大。但是，这会导致半导体装置1的布局面积的扩大，因而欲避免使耗尽层以必要以上的程度扩大。控制所述耗尽层的延伸的是N型扩散层54。即，N型扩散层54具有抑制来自活性区域A1的一侧的耗尽层延伸的功能。本实施方式中，通过使N型扩散层54***耗尽层中而将半导体装置1的布局抑制成所期望的形状。换言之，使耗尽层停止的N型扩散层54构成电场的一个集中区域(电场高的区域，以下有时称为“电场集中区域”)。另外，构成电场集中区域的N型扩散层54能够通过延长特定方向的长度而进一步将电场的集中弛豫。
此处，对本实施方式的电场弛豫结构体50的电场集中区域进行研究。如图2(b)所示，电场弛豫结构体50的主要的电场集中区域成为下述三处，即：作为与场板56的非活性区域A2侧的端部对应的外延层12的主面的区域的区域P1、作为N型扩散层54的内部的区域P2、以及作为P型扩散层52的非活性区域A2侧的端部的区域P3。换言之，本实施方式的电场弛豫结构体50成为将电场的集中分散至三处(P型扩散层52、N型扩散层54、场板56)，由整个电场弛豫结构体50来承受电场的结构。另外，为了将电场的集中分散至三处，优选平面观看时，N型扩散层54不与场板56的端部接触，而是配置于由场板56包含在内的主面的区域。
本实施方式的半导体装置1中，在半导体装置1的外形的角部(角落部)中扩大N型扩散层54及场板56的宽度。即，如将图2(c)与图2(b)比较所表明，在角落部中N型扩散层54、场板56的宽度经扩大(经扩宽)。一般而言，电场集中于导体的尖锐部，因而本实施方式中，P型扩散层52、N型扩散层54、场板56在角落部中以描画平缓的弧的方式形成，进而本实施方式的半导体装置1中，在角落部中将N型扩散层54、场板56扩宽，在通过构成角落部的弧的中点、与弧的中心的二等分线的位置(图2(a)的B-B线的位置)，使N型扩散层54、场板56的宽度最大。进而，当如图2(a)所示那样在N型扩散层54的外周上设想点C、点D，另外在N型扩散层54的内周上设想点E、点F时，将点C与点D连结的直线C-D较将点E与点F连结的直线E-F更长。其中，点C为N型扩散层54的外周上的一点，点E为与点C的位置对应的内周上的一点，点D为外周中从直线切换成角落部的点，点F为内周中从直线切换成角落部的点。由此，关于本实施方式的半导体装置1，在具有场板的半导体装置中抑制布局面积的增大并且耐压的降低得到抑制。以下，将电场弛豫结构体50的具有图2(b)的截面构成的区域称为“直线部60”，将如图2(c)所示那样从图2(b)的构成使N型扩散层54、场板56扩宽的区域称为“屈曲部62”。
如以上所详述，根据本实施方式的半导体装置，在与场板对应(位于下部)的半导体基板的主面设置P型扩散层、N型扩散层，使场板端部所产生的电场集中弛豫，因而可使半导体装置的耐压提升。进而，通过使屈曲部的N型扩散层的宽度较直线部的N型扩散层的宽度更宽，而将屈曲部所产生的电场集中进一步弛豫。即，通过仅在半导体装置的角落部进行场板的扩宽而抑制布局面积的增加，并且实现因电场集中而容易产生耐压降低的角落部的耐压提升。换言之，扩大场板的宽度成为有效的耐压提升方法，但简单地扩宽会导致芯片尺寸的扩大。因此，本实施方式中，有效地运用形成为平缓的弧状的屈曲部62，在不导致布局面积的增大的情况下实现耐压的提升。
＜第一实施方式的变形例＞
参照图3对本实施方式的半导体装置进行说明。本实施方式的半导体装置是将上文所述的半导体装置1的电场弛豫结构体50替换成电场弛豫结构体50a而成，半导体装置的构成与图1相同。因此，必要情况下参照图1而省略详细的说明。图3所示的电场弛豫结构体50a表示环状的电场弛豫结构体50a中的图1(a)所示的区域S的部分。此外，对于图1(a)所示的区域S以外的三个角部(角落部)，也配置有与图3相同构成的电场弛豫结构体50a。
电场弛豫结构体50a的平面布局与图2(a)所示的电场弛豫结构体50基本相同，但在电场弛豫结构体50中将图2(a)所示的N型扩散层54替换成N型扩散层54a。而且，如图3所示，N型扩散层54a包含杂质浓度不同的两个区域。即，为作为浓度相对较高的区域的高浓度区域54a-1、与作为浓度相对较低的区域的低浓度区域54a-2。另外，高浓度区域54a-1是与直线部60对应地配置，低浓度区域54a-2是与屈曲部62对应地配置。
本实施方式的电场弛豫结构体50a中，为了将角落部的电场弛豫而降低角落部的浓度。另一方面，当降低角落部的浓度时耗尽层容易延伸，因而为了将与半径R6对应的场板56的角部的电场充分弛豫而将角落部的N型扩散层54a-2的宽度扩大。即，杂质浓度在直线部60、屈曲部62中均匀的情况下，电场相对容易集中于屈曲部62的角落部。因此，本实施方式中特意使杂质浓度不均衡而将角落部的电场弛豫。由此带来进一步的耐压提升。
如以上那样，根据本实施方式的半导体装置，在发挥与所述实施方式的半导体装置1相同的效果的基础上，还通过使屈曲部62的N型扩散层54a-2的杂质浓度低于直线部60的N型扩散层54a-1的杂质浓度，而将角落部所产生的电场集中进一步弛豫。因此，抑制场板的面积增加并且实现因电场集中而容易产生耐压降低的角落部的耐压提升变得更可靠。
[第二实施方式]
参照图4对本实施方式的半导体装置进行说明。本实施方式的半导体装置是将上文所述的半导体装置1的电场弛豫结构体50替换为电场弛豫结构体50b而成，半导体装置的构成与图1相同。因此，必要情况下参照图1而省略详细的说明。图4所示的电场弛豫结构体50b表示环状的电场弛豫结构体50b中的图1(a)所示的区域S的部分。此外，关于图1(a)所示的区域S以外的三个角部(角落部)，也配置有与图4相同构成的电场弛豫结构体50b。
本实施方式的电场弛豫结构体50b是将图3所示的电场弛豫结构体50a的屈曲部62替换为屈曲部62a，将N型扩散层54a替换为N型扩散层54b而成。N型扩散层54b是包含杂质浓度相对较高的高浓度区域54b-1、及杂质浓度相对较低的低浓度区域54b-2而构成，高浓度区域54b-1是与直线部60对应地配置，低浓度区域54b-2是与屈曲部62a对应地配置。N型扩散层54b的屈曲部62a不像屈曲部62那样具有扩宽部，而成为从直线部60不改变宽度而自然屈曲的形状。
根据本实施方式的半导体装置，在与场板对应(位于下部)的半导体基板的主面设置P型扩散层、N型扩散层，使场板端部所产生的电场集中弛豫，因而可使半导体装置的耐压提升。本实施方式的半导体装置中，还将屈曲部62的N型扩散层54b设为低浓度区域54b-2，将直线部60的N型扩散层54b设为高浓度区域54b-1，使屈曲部62a的N型扩散层54b的杂质浓度低于直线部60的N型扩散层54b的杂质浓度。由此，可将电场弛豫结构体50b的角落部产生的电场集中弛豫，抑制场板的面积增加，并且实现因电场集中而容易产生耐压降低的角落部的耐压提升。
此外，所述各实施方式中，作为本发明的半导体装置而例示NPN型双极晶体管进行了说明，但不限于此，也可将本发明应用于PNP型双极晶体管。此时，P型扩散层52、N型扩散层54等的杂质型相反。而且，配置于活性区域A1的半导体元件不限于双极晶体管，例如也可为MOS晶体管、二极管等。
而且，所述各实施方式中例示P型扩散层52为一层的情况进行了说明，但不限于此，也可设为将多层彼此配置成环状(嵌套状)的实施方式。由此，可获得耐压进一步提升的半导体装置。

Claims (9)

1.一种半导体装置，其特征在于，包括：
第一导电型的半导体基板，在主面包括单元区域及包围所述单元区域的外周区域；
与所述第一导电型不同的第二导电型的第一扩散层，配置于所述外周区域内，包围所述单元区域；
电极，配置于所述外周区域内，经由设于绝缘构件的开口部而与所述主面接触，并且连接于所述第一扩散层；以及
所述第一导电型的第二扩散层，从相对于所述主面而垂直的方向观看时，在由所述电极包含在内的区域的所述主面远离所述第一扩散层而形成，且包含具有第一宽度的直线部、及具有较所述第一宽度更宽的第二宽度的部分的屈曲部。
2.根据权利要求1所述的半导体装置，其特征在于，
所述第二扩散层的杂质浓度高于所述半导体基板的杂质浓度。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述电极配置成包围所述单元区域的周围。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述第二扩散层配置成包围所述第一扩散层的周围。
5.根据权利要求1至4中任一项所述的半导体装置，其特征在于，
所述直线部具有第一杂质浓度，所述屈曲部具有低于所述第一杂质浓度的第二杂质浓度。
6.一种半导体装置，其特征在于，包括：
第一导电型的半导体基板，在主面包括单元区域及包围所述单元区域的外周区域；
与所述第一导电型不同的第二导电型的第一扩散层，配置于所述外周区域内，包围所述单元区域；
电极，配置于所述外周区域内，经由设于绝缘构件的开口部而与所述主面接触，并且连接于所述第一扩散层；以及
所述第一导电型的第二扩散层，从相对于所述主面而垂直的方向观看时，在由所述电极包含在内的区域的所述主面远离所述第一扩散层而形成，且包含具有第一杂质浓度的直线部、及具有较所述第一杂质浓度更低的第二杂质浓度的部分的屈曲部。
7.根据权利要求6所述的半导体装置，其特征在于，
所述第二扩散层的杂质浓度高于所述半导体基板的杂质浓度。
8.根据权利要求6或7所述的半导体装置，其特征在于，
所述电极配置成包围所述单元区域的周围。
9.根据权利要求6至8中任一项所述的半导体装置，其特征在于，
所述第二扩散层配置成包围所述第一扩散层的周围。
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