CN110741484A - 半导体模块、显示装置及半导体模块的制造方法 - Google Patents

半导体模块、显示装置及半导体模块的制造方法 Download PDF

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CN110741484A
CN110741484A CN201880036113.3A CN201880036113A CN110741484A CN 110741484 A CN110741484 A CN 110741484A CN 201880036113 A CN201880036113 A CN 201880036113A CN 110741484 A CN110741484 A CN 110741484A
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resin
light emitting
substrate
light
semiconductor module
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东坂浩由
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Sharp Corp
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Sharp Corp
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Abstract

树脂(16)覆盖蓝色LED(15)的侧面及背面，且将蓝色LED(15)保持为水平。电极(14)设于配线基板(11)的表面与蓝色LED(15)的背面之间，贯穿树脂(16)，且将配线基板(11)与蓝色LED(15)电连接。蓝色LED(15)的光出射面(表面)(151)自树脂(16)露出，将光出射面(表面)(151)与树脂(16)的表面(161)配置于同一平面。

Description

半导体模块、显示装置及半导体模块的制造方法
技术领域
本发明涉及一种半导体模块、显示装置及半导体模块的制造方法。
背景技术
于专利文献1～3中揭示了以往的发光装置的一例。
现有技术文献
专利文献
专利文献1：日本国公开专利公报“日本专利特开2015-126209号(2015年7月6日公开)”
专利文献2：日本国专利公报“日本专利5526782号(2014年4月26日登录)”
专利文献3：日本国公表专利公报“日本专利特表2012-503876号(2012年2月9日公开)”
发明内容
本发明所要解决的技术问题
在上述以往的各发光装置中，存在无法使发光分段高分辨率的问题。
本发明是为了解决所述问题而成者，其目的在于使发光分段高分辨率。
解决问题的方案
本发明的一形态的半导体模块的特征在于，为了解决所述问题而具备：基板；发光芯片，其搭载于所述基板上；树脂，其覆盖所述发光芯片的侧面及背面，且将所述发光芯片保持为水平；电极材料，其设于所述基板的表面与所述发光芯片的所述背面之间，贯穿所述树脂，且将所述基板与所述发光芯片电连接；所述发光芯片的光出射面(表面)自所述树脂露出，将所述光出射面(表面)与所述树脂的表面配置于同一平面。
本发明的另一形态的半导体模块的特征在于，为了解决所述问题而具备：基板；多个发光芯片，其并排设置搭载于所述基板上；树脂，其覆盖所述多个发光芯片的侧面及背面，且将所述多个发光芯片保持为水平；电极材料，其设于所述基板的表面与所述多个发光芯片的所述背面之间，贯穿所述树脂，且将所述基板与所述多个发光芯片电连接；所述多个发光芯片的光出射面(表面)自所述树脂露出，将所述光出射面(表面)与所述树脂的表面配置于同一平面。
发明效果
根据本发明的一形态，起到可使发光分段高分辨率的效果。
附图说明
图1为示出本发明的第一实施方式的半导体模块的截面结构的剖视图。
图2为说明本发明的第一实施方式的半导体模块的制造方法的图。
图3为示出本发明的第二实施方式的半导体模块的截面结构的剖视图。
图4为示出本发明的第三实施方式的半导体模块的截面结构的剖视图。
图5为示出本发明的第四实施方式的半导体模块的截面结构的剖视图。
图6为说明由本发明的第四实施方式的半导体模块所起到的效果的图。
图7为示出本发明的第五实施方式的半导体模块的截面结构的剖视图。
具体实施方式
[第一实施方式]
以下,参照图1及图2而对本发明的第一实施方式加以说明。
(半导体模块1的构成)
图1为示出本发明的第一实施方式的半导体模块1的截面结构的剖视图。如该图所示，半导体模块1具备：配线基板11、金属配线12、绝缘层13、电极14、蓝色LED15及树脂16。
半导体模块1例如为组装到头戴式显示器等小型显示装置中的发光装置。在半导体模块1中，在相当于以往的通常的显示装置的各像素的部位配置着单个的蓝色LED15。半导体模块1通过控制蓝色LED15的各自的点亮及熄灭而参与显示装置的信息显示。
在半导体模块1中，优选缩小各个蓝色LED15，且以密集的状态进行配置的布局。由此可提高显示画面的高分辨率。本技术是可应用于各个蓝色LED15的大小为在俯视下，纵宽及横宽为20μm以下、更优选为数μm～10数μm的制品中的技术。
(配线基板11)
配线基板11可利用至少其表面形成着可与蓝色LED15连接的配线的配线基板。至于配线基板11的材料，可使用基板整体由氮化铝构成的氮化铝的单晶、多晶等结晶性基板，进而可使用烧结基板，作为其他材料，可使用氧化铝等陶瓷、玻璃、Si等半导体或金属基板、以及在它们的表面形成有氮化铝薄膜层的基板等层叠体、复合体。金属性基板、陶瓷基板由于散热性高而优选。
例如，通过使用利用集成电路形成技术在Si上形成有控制LED发光的电路的基板，可制造使微细的LED密集的高高分辨率显示装置。
(金属配线12)
金属配线12是至少包含对蓝色LED15供给控制电压的控制电路的配线。至于金属配线12的形成，通过蚀刻法等来实施金属层的图案化。例如可列举在Si基板表面上形成由Al或Cu等构成的金属配线12等的例子。另外，为了对金属配线12进行保护，还可以在基板的形成金属配线12一侧的表面，形成由SiO2等的薄膜构成的保护膜。
(绝缘层13)
绝缘层13是由氧化膜层及/或树脂层构成的绝缘性的层。绝缘层13防止配线基板11与电极14直接接触。
(电极14)
电极14发挥作为平头电极的功能，也被称为凸块，所述平头电极将金属配线12与设在蓝色LED15表面的金属端子(未图示)电连接。电极14中的与金属配线12连接的第一部分为基板侧电极141，电极14中的与设在蓝色LED15表面的金属端子(未图示)连接的第二部分为LED侧电极142。基板侧电极141及LED侧电极142由例如Au、Pt、Pd、Rh、Ni、W、Mo、Cr、Ti的任一种金属或它们的合金，或者它们的组合构成。作为组合的例子，在将基板侧电极141及LED侧电极142构成为金属电极层的情况下，考虑自下面起为W/Pt/Au、Rh/Pt/Au、W/Pt/Au/Ni、Pt/Au、Ti/Pt/Au、Ti/Rh、或TiW/Au的层叠结构。
电极14在光出射方向上具有阶差部位。基板侧电极141中的与光出射方向平行的截面的面积(第一面积、截面积)与LED侧电极142中的与光出射方向平行的截面的面积(第二面积、截面积)不同。在图1中，基板侧电极141的截面积大于LED侧电极142的截面积。另外，优选基板侧电极141及LED侧电极142的最表面为Au。
(蓝色LED15)
蓝色LED15可利用公知者、具体而言可利用半导体发光元件。其中，GaN系半导体可发出能够效率良好地对荧光物质进行激发的短波长的光，因此作为蓝色LED15而言优选。
作为蓝色LED15的半导体层，自氮化物半导体发出可见光区域的短波长区域、近紫外区域、或比其短的波长区域这一点考虑，在将这一点与波长转换构件(荧光体)组合的半导体模块1中适用氮化物半导体。而且，并不限定于此，ZnSe系、InGaAs系、AlInGaP系等半导体也可以。
至于半导体层的发光元件结构，于输出、效率方面而言，优选在第一导电型(n型)层、第二导电型(p型)层之间具有有源层的结构，但并不限定于此。而且，可以在各导电型层设置一部分绝缘、半绝缘性、反向导电型结构，而且还可以是对第一、第二导电型层附加地设置这些结构的结构。还可以附加地具有其他电路结构、例如保护元件结构。
作为蓝色LED15及其半导体层的结构，可列举具有MIS结、PIN结或PN结的同质结构、异质结构或双异质结构。而且，还可以将各层设为超晶格结构，或者将作为有源层的发光层设为形成于产生量子效应的薄膜中的单量子阱结构或多量子阱结构。
在蓝色LED15的表面设置着可自外部供给电力的金属端子。
各个蓝色LED15的大小并无特别限定，但在要求作为显示画面的高分辨率的情况下，LED15需要微细化，例如变得需要将纵宽及横宽设为20μm以下、更优选为10数μm以下。通过使用本技术，即便在蓝色LED15如此小的情况下，树脂16的密接力也充分高，因此可对配线基板11稳定地固定蓝色LED15。
(树脂16)
树脂16将蓝色LED15及电极14固定于配线基板11上，且防止自蓝色LED15的侧面漏光。树脂16也称为底部填充胶，作为其中一例，可使液状树脂硬化而形成。树脂16埋入到半导体模块1中的至少包含配线基板11的上部、蓝色LED15的侧面的一部分及电极14的侧面的区域。
蓝色LED15的发光自蓝色LED15中的与配线基板11侧为相反侧的光出射面151放射出。因此，通过用树脂16覆盖蓝色LED15的至少侧面而获得以下的作用及效果。首先，可避免自蓝色LED15的侧面漏光。其次，可抑制与来自光出射面151的发光相比而言具有无法忽略的程度的配色差的光从侧面向外方放射出，从而可减低在整体发光颜色中产生颜色不均匀。第三，使向侧面方向行进的光向半导体模块1的光提取方向侧反射，进一步限制向外部的发光区域，由此提高所放射出的光的指向性，且提高光出射面151的发光亮度。第四，使自蓝色LED15产生的热向树脂16传导，由此可提高蓝色LED15的散热性。第五，可提高蓝色LED15的发光层的耐湿性。
如果蓝色LED15中的自光出射面151起连续的侧面、即蓝色LED15的与厚度方向平行的侧面侧被树脂16覆盖，且光出射面151自树脂16露出，则其外面形状并无特别限定。例如，树脂16可以是超过光出射面151而突出的结构或者并未达到光出射面151而凹陷的结构。
在第一实施方式中，如图1所示，树脂16的表面161以沿着光出射面151的面状的方式构成。即，树脂16的覆盖区域的露出表面形成为与光出射面151的表面大致同一面。由此抑制半导体模块1内的发光特性的偏差，从而带来产率的提高。而且，通过覆盖侧面的大致整个面，可提高蓝色LED15的散热性。
在本实施方式中，树脂16由白色系树脂或黑色系树脂构成。因此，树脂16的颜色优选为有色系的颜色，特别优选白色系的颜色或黑色系的颜色。
(电极14的固定强化)
在图1中，基板侧电极141的截面积与LED侧电极142的截面积不同，因此树脂16除了密接于基板侧电极141的侧面及LED侧电极142的侧面以外，还密接于任意电极的表面露出的区域(阶差面)。树脂16的吸附作用对阶差面起作用，因此基板侧电极141及LED侧电极142被更强地固定于配线基板11上。
如图1所示，在基板侧电极141的截面积大于LED侧电极142的截面积的情况下，将基板侧电极141自基板侧电极141的阶差面的上部向配线基板11按压的固定力17作用于基板侧电极141上。由此可将电极14及其上所配置的蓝色LED15更稳定地固定于配线基板11上，因此更优选。理想的是蓝色LED15的光出射面151与树脂16的表面161为大致同一面。由此可抑制蓝色LED15的发光自蓝色LED15的侧面射出，因此可提高蓝色LED15的发光效率。
(半导体模块1的制造方法)
图2为说明本发明的第一实施方式的半导体模块1的制造方法的图。
(蓝色LED15的形成工序)
首先，如图2的(a)所示，在生长基板18上设置蓝色LED15。生长基板18是使蓝色LED15的半导体层外延生长的基板。作为氮化物半导体中的基板，有：以C面、R面及A面的任一面为主表面的如蓝宝石或尖晶石(MgAl2O4)这样的绝缘性基板，以及与碳化硅(6H、4H、3C)、Si、ZnS、ZnO、GaAs、金刚石及氮化物半导体晶格接合的铌酸锂、镓酸钕等的氧化物基板，GaN或AlN等的氮化物半导体基板。
作为氮化物半导体，通式为InxAlyGa1-x-yN(0≦x、0≦y、x+y≦1)，还可以混晶B或P、As。蓝色LED15的n型半导体层及p型半导体层并不特别限定单层、多层。在氮化物半导体层中具有作为有源层的发光层，该有源层为单量子阱结构(SQW)或多量子阱结构(MQW)。
使用在生长基板18上，经由缓冲层等氮化物半导体的基层、例如低温生长薄膜GaN与GaN层，层叠例如掺杂Si的GaN的n型接触层与GaN/InGaN的n型多层膜层而作为n型氮化物半导体层，其次，层叠InGaN/GaN的MQW有源层，进一步层叠例如掺杂Mg的InGaN/Al GaN的p型多层膜层与掺杂Mg的GaN的p型接触层而作为p型氮化物半导体层的结构。而且，氮化物半导体的发光层(有源层)具有例如包含阱层、包含势垒层和阱层的量子阱结构。有源层中所使用的氮化物半导体也可以掺杂p型杂质，但可以优选通过非掺杂或掺杂n型杂质来使发光元件高功率化。
通过使阱层含有Al，可获得作为GaN的带隙能的比波长365nm短的波长。自有源层放射出的光的波长可根据发光元件的目的及用途等而设为360nm～650nm附近、优选为380nm～560nm的波长。至于阱层的组成，InGaN可适用于可见光、近紫外区域，此时的势垒层的组成优选为GaN、InGaN。作为势垒层与阱层的膜厚的具体例，分别为1nm以上30nm以下、1nm以上20nm以下，可以设为一个阱层的单量子阱、介隔着势垒层等的多个阱层的多量子阱结构。
(LED侧电极142的形成工序)
在蓝色LED15的形成后，如图2的(b)所示，在蓝色LED15上形成多个LED侧电极142。在该形成中使用众所周知的通常的电极形成技术。LED侧电极142的代表性材料例如为Au。
(分离槽19的形成工序)
在LED侧电极142的形成后，如图2的(c)所示，在蓝色LED15上形成多个分离槽19。在该形成中使用标准的半导体选择性蚀刻工艺。在图2中，在邻接的LED侧电极142之间形成分离槽19。所形成的分离槽19到达生长基板18的表面。通过形成分离槽19，一枚蓝色LED15在生长基板18的表面被分割为多个单个的蓝色LED15(发光芯片)。
(两个基板的对准工序)
在分离槽19的形成后，如图2的(d)所示，准备预先形成了金属配线12、绝缘层13及基板侧电极141的配线基板11。在对配线基板11上形成基板侧电极141时使用众所周知的通常的电极形成技术。基板侧电极141的代表性材料例如为Au。与配线基板11的准备同时进行如图2的(d)所示那样使生长基板18反转的操作。在反转后，以各基板侧电极141与各LED侧电极142对置的方式将配线基板11与生长基板18对准。
(基板的贴合工序)
在对准完成后，如图2的(e)所示那样将配线基板11与生长基板18贴合。此时，使用已有的贴合技术，通过加压从上下按压配线基板11及生长基板18以使对应的基板侧电极141及LED侧电极142接合。由此使对应的基板侧电极141及LED侧电极142一体化而构成电极14。
(树脂16的形成工序)
在贴合工序完成后，在配线基板11与生长基板18之间形成的空隙内填充液状树脂16a。将填充后的状态示于图2的(f)中。此时，例如以贴合后的状态浸入充满液状树脂16a的容器内即可。液状树脂16a的主材料并无特别限定，例如优选为环氧树脂。另外，液状树脂16a的注入方法除了上述以外，还可以是用注射针、特别是与配线基板11和蓝色LED15之间形成的空隙的尺寸匹配的微型针来注入液状树脂16a的方法。这种情况下的注射针的材料可使用金属制、或塑料制等的材料。
在填充工序中，优选在50℃～200℃的温度范围内的温度下填充液状树脂16a。由此变得容易将液状树脂16a正常地填充于空隙内。另外，温度范围更优选为80℃～170℃。由此可减少损及树脂16的特性(后述的硬化工艺后的密接性、散热性等)的可能。而且，温度范围更进一步优选为100℃～150℃。由此可减少在所述空隙产生的气泡等，可基本完全填充而不产生对流等，变得易于制造半导体模块1。
特别是在将各个蓝色LED15的大小设为例如纵宽及横宽为20μm以下、更优选为数μm～10数μm，将蓝色LED15的厚度设为数μm(2μm～10μm)左右的微小尺寸的情况下，在基板剥离及剥离后的工序中，液状树脂16a作为用以使固接力提高的增强构件而更有用地发挥功能。由此可进一步降低树脂16的上述制品间的特性偏差，因此可容易地制造半导体模块1。
填充于空隙内的液状树脂16a如图2的(f)所示那样完全埋入到空隙内。由此在蓝色LED15的侧面、电极14的侧面及阶差面、以及配线基板11的上部埋入液状树脂16a。在液状树脂16a的填充完成后，使液状树脂16a硬化。另外，使液状树脂16a硬化的方法并无特别限定，例如可通过对液状树脂16a进行加热、或对液状树脂16a照射紫外线而使液状树脂16a硬化。
(生长基板18的剥离工序)
在填充工序完成后，如图2的(g)所示那样使生长基板18剥离。在该工序中使用已有的剥离技术。作为已有的剥离方法的一例，可使用利用激光照射的剥离技术。例如在LED的生长基板使用蓝宝石等透明基板，使氮化物半导体晶体生长而作为发光元件层的情况下，通过在一定条件下自透明基板侧照射激光，可减轻对生长基板与晶体生长层的界面所带来的损伤。另外，作为其他方法，还可以使用湿式蚀刻法、磨削、或研磨法等进行生长基板18的剥离。
树脂16将电极14及蓝色LED15密接固定于配线基板11上，因此在剥离生长基板18时，可以防止蓝色LED15及电极14被一起剥离。在生长基板18的剥离后，蓝色LED15的光出射面151及树脂16的表面161露出。由此完成半导体模块1的制造。
上述制造方法不过是可制造半导体模块1的方法的一例。此处所说明的各工序是为了容易制造半导体模块1的工序，构成半导体模块1的制造方法的工序并不限定于这些。
本实施方式的半导体模块1所具备的各构件的关系还可以表现如下。树脂16覆盖蓝色LED15的侧面及背面，且将蓝色LED15保持为水平。电极14是设于配线基板11的表面与蓝色LED15的背面之间，贯穿树脂16，且将配线基板11与蓝色LED15电连接的电极材料。蓝色LED15的光出射面(表面)151自树脂16露出，将光出射面(表面)151与树脂16的表面161配置于同一平面。
由本实施方式的半导体模块1所起到的效果还可以表现如下。可以通过电极14和树脂16将蓝色LED15保持为水平状态。另外，可将接近的发光分段的大小减小到蓝色LED15自身的大小，因此可使发光分段高分辨率。还可以使半导体模块1的光轴稳定化。还可以容易地形成蓝色LED15(荧光体)。
本实施方式的半导体模块1所具备的各构件的关系还可以表现如下。多个蓝色LED15并排设置搭载于配线基板11上。树脂16覆盖多个蓝色LED15的侧面及背面，且将多个蓝色LED15保持为水平。电极14是设于配线基板11的表面与多个蓝色LED15的背面之间，贯穿树脂16，且将配线基板11与多个蓝色LED15电连接的电极材料。多个发光芯片的光出射面(表面)151自树脂16露出，将光出射面(表面)151与树脂16的表面161配置于同一平面。
由本实施方式的半导体模块1所起到的效果还可以表现如下。可以通过电极14及树脂16将多个蓝色LED15的全部保持为水平状态。由此可防止由于一些蓝色LED15倾斜而给人带来的发光分段的不适感。另外，可将半导体模块1的多个发光分段的大小减少到多个蓝色LED15自身的大小，因此可使多个发光分段高分辨率。还可以使半导体模块1的光轴稳定化。还可以容易地形成多个蓝色LED15(荧光体)。还可以防止多个发光分段的光轴偏差，或防止半导体模块1所发出的光闪烁。
[第二实施方式]
以下,参照图3对本发明的第二实施方式加以说明。于本实施方式中，对与第一实施方式共用的构件标注同一附图标记，只要没有特别需要，就不再重复其详细说明。
图3为示出本发明的第二实施方式的半导体模块的截面结构的剖视图。如该图所示，本实施方式的半导体模块1具备电极14a以代替第一实施方式的半导体模块1的电极14。电极14a中的与金属配线12连接的第一部分为基板侧电极141a，电极14a中的与设于蓝色LED15表面的金属端子(未图示)连接的第二部分为LED侧电极142a。而且，基板侧电极141a与LED侧电极142a的尺寸大致相同，且分别具有半球状的形状。在电极14a侧面的一部分形成有缩窄部位，该缩窄部位构成阶差面。
在将配线基板11与生长基板18贴合时，考虑通过加压从上下按压配线基板11及生长基板18以使对应的基板侧电极141a及LED侧电极142a接合的情况。在这种情况下，如果对应的基板侧电极141a及LED侧电极142a一体化而构成电极14a，则电极14a成为图3所示的形状。
在使对应的基板侧电极141a与LED侧电极142a接合的情况下，通过使树脂16进入位于电极14a的侧面的一部分的缩窄部位，可提高基板侧电极141a与LED侧电极142a的固定强度。
另外，基板侧电极141a及LED侧电极142a的形状并不限定于半球状。总之，基板侧电极141a及LED侧电极142a的形状如果是在电极14a侧面的一部分形成缩窄部位的形状即可。例如，基板侧电极141a及LED侧电极142a的形状分别可以是圆锥或截锥形状等凸形形状。
[第三实施方式]
以下,参照图4对本发明的第三实施方式加以说明。于本实施方式中，对与第一实施方式至第二实施方式共用的构件标注同一附图标记，只要没有特别需要，就不再重复其详细说明。
图4为示出本发明的第三实施方式的半导体模块1的截面结构的剖视图。如该图所示，本实施方式的半导体模块1除了第一实施方式的半导体模块1的所有构成组件以外，还具备红色荧光体31、绿色荧光体32及透光性树脂33。
树脂16埋入到配线基板11的上部、蓝色LED15的侧面及电极14的周围。以下，将图4中所示的三个蓝色LED15，自图中的左侧起顺次称为第一、第二及第三蓝色LED15。红色荧光体31配置于第一蓝色LED15的表面(光出射面151)。绿色荧光体32配置于第一蓝色LED15的旁边所配置的第二蓝色LED15的表面(光出射面151)。透光性树脂33配置于第二蓝色LED15的旁边所配置的第三蓝色LED15的表面(光出射面151)。上述各种荧光体以至少覆盖LED15的光出射面151的方式，通过例如光刻或丝网印刷等方法而形成。
红色荧光体31对配置于其正下方的蓝色LED15所发出的光的波长进行转换，射出红色光。绿色荧光体32对配置于其正下方的蓝色LED15所发出的光的波长进行转换，射出绿色光。透光性树脂33并不对配置于其正下方的蓝色LED15所发出的光的波长进行转换，直接使其通过。由此，本实施方式的半导体模块1可以发出红色光、绿色光及蓝色光此三原色的光。而且，组装有本实施方式的半导体模块1的显示装置可以通过对各个LED的发光进行控制来进行彩色显示。
红色荧光体31及绿色荧光体32具体而言由如下者构成：玻璃板；于其上具备光转换构件者；或者光转换构件的荧光体晶体或具有该相的单晶体、多晶体、非晶体、陶瓷体；或者利用荧光体晶体粒子，其与适当附加的透光性构件的烧结体、凝聚体、多孔质性材料，于它们中混入、含浸有透光性构件、例如树脂而成者；或者含有荧光体粒子的透光性构件、例如透光性树脂的成形体等。另外，自耐热性的观点考虑，透光构件优选由无机材料构成，而不是树脂等有机材料。具体而言，优选由含有荧光体的透光性无机材料构成，特别是通过利用荧光体与无机物(粘合材料)的烧结体、或者由荧光体构成的烧结体或单晶而进行成形，使可靠性提高。另外，在使用YAG(钇铝石榴石)荧光体的情况下，自可靠性的观点考虑，除了YAG的单晶或高纯度的烧结体以外，还优选将氧化铝(Al2O3)作为粘合材料(粘合剂)的YAG/氧化铝的烧结体。而且，红色荧光体31及绿色荧光体32的形状并无特别限定，在第二实施方式中将红色荧光体31及绿色荧光体32设为板状。通过设为板状，可使其与构成为面状的蓝色LED15的出射面的结合效率良好，从而可容易地对准以使其与红色荧光体31及绿色荧光体32的主表面大致平行。另外，通过使红色荧光体31及绿色荧光体32的厚度大致固定，可抑制所构成的波长转换构件的偏向存在，其结果可使所通过的光的波长转换量大致均匀，使混色的比例稳定，从而可抑制发光面15a的部位的颜色不均匀。
而且，作为可与蓝色LED15适宜组合而进行白色发光的在波长转换构件中使用的代表性荧光体，可列举用铈激活的YAG荧光体及LAG(镥铝石榴石)荧光体。特别是在高亮度且长时间的使用时，优选(Re1-xSmx)3(Al1-yGay)5O12：Ce(0≦x＜1、0≦y≦1、Re为选自由Y、Gd、La、Lu所组成的群的至少一种元素)等。而且，可使用包含选自由YAG、LAG、BAM、BAM：Mn、(Zn、Cd)Zn：Cu、CCA、SCA、SCESN、SESN、CESN、CASBN及CaAlSiN3：Eu所组成的群的至少一种的荧光体。
在本实施方式的半导体模块1中，至少光出射面151被平坦化，因此可提高红色荧光体31、绿色荧光体32及透光性树脂33对于蓝色LED15的光出射面151的密接力，而且还实现了膜厚的均匀化，因此光学特性提高。而且，如果以树脂16的表面161沿着光出射面151的面状，即树脂16的覆盖区域的露出表面成为与光出射面151的表面为大致同一面的方式形成，则该面成为接***坦的状态。因此，变得可以在各种荧光体的形成工序(例如光刻或丝网印刷等)中稳定地形成图案，从而可期待制品品质的提高。
[第四实施方式]
以下参照图5及6对本发明的第四实施方式加以说明。于本实施方式中，对与第一实施方式至第三实施方式的至少任一者共用的构件标注同一附图标记，只要没有特别需要，就不再重复其详细说明。
图5为示出本发明的第四实施方式的半导体模块1的截面结构的剖视图。如该图所示，本实施方式的半导体模块1的构成组件与第一实施方式的半导体模块1的构成组件相同。但是，在本实施方式中，树脂16的构成不同。详细而言，树脂16由包含第一层及第二层的至少两层构成，在图5的例子中，第一层为白色系树脂162(第一树脂)，第二层为光反射率比白色系树脂162低的黑色系树脂163(第二树脂)。将白色系树脂162配置于配线基板11侧，在白色系树脂162上配置黑色系树脂163。
根据图5的构成，可将树脂16的光反射率在配线基板11侧控制为50％以上。另外，可将树脂16的透光率在蓝色LED15侧控制为50％以下。半导体模块1的透光率及光反射率的详细如后所述。
图6为说明由本发明的第四实施方式的半导体模块1起到的效果的图。
图6的(a)示出构成半导体模块1的正面(表面)的多个部分区域41。于该图中示出3×3＝9个部分区域41。一个部分区域41与例如组装半导体模块1的显示装置中的一个像素对应。于图6的(a)中，一个部分区域41由三个点构成。各点例如为发出三原色的任一种颜色的光的部分。
于图6的(a)中，在仅有中央的部分区域41中所含的三个点中的配置于区域中心的中心点42发光的情况下，仅有中央的部分区域41发光。将这种情况下的发光亮度设为100。图6的(b)示出在半导体模块1中产生漏光的样子。在图6的(b)中，仅有中心点42发光的情况下，发光范围43从中央的部分区域41扩大到周围的部分区域41。在将中央的部分区域41的发光亮度设为100时，周围的部分区域41中所漏的发光亮度为20。将此时的漏光率规定为20％。漏光率也可以说是半导体模块1的面发光时的对比比率。
图6的(c)是示出半导体模块1的面内方向的漏光率与树脂16的透光率或光反射率的关系的曲线图。该曲线图的纵轴表示漏光率，横轴表示透光率或光反射率。
如曲线51所示，树脂16的透光率越高，则半导体模块1的漏光率越变高。另一方面，如曲线52所示，树脂16的光反射率越高，则半导体模块1的漏光率越变低。在透光率为50％以下的情况下，漏光率为20％以下。在光反射率为50％以上的情况下，漏光率也同样为20％以下。
在半导体模块1中，优选树脂16的透光率为50％以下。由此可将漏光率设为20％以下，因此可提升组装半导体模块1的显示装置的显示质量。而且，在半导体模块1中，优选树脂16的光反射率为50％以上。由此可将漏光率设为20％以下，因此可提升组装半导体模块1的显示装置的显示质量。
[第五实施方式]
以下参照图7对本发明的第四实施方式加以说明。于本实施方式中，对与第一实施方式至第三实施方式的至少任一者共用的构件标注同一附图标记，只要没有特别需要，就不再重复其详细说明。
图7为示出本发明的第五实施方式的半导体模块1的截面结构的剖视图。如该图所示，本实施方式的半导体模块1的构成组件与第一实施方式的半导体模块1的构成组件相同。但是，在本实施方式中，蓝色LED15的形状不同。详细而言，在蓝色LED15的光出射面151中，邻接的多个蓝色LED15的至少一部分相互连接。在图7的例子中，多个蓝色LED15共有一个光出射面151。由此可使半导体模块1的表面更平滑。
本实施方式的半导体模块1例如如下所示地制造。在分离槽19的制作步骤中，以分离槽19并未到达生长基板18，外延层稍许(例如1μm)残留于生长基板18表面的方式制作分离槽19。因此，在生长基板18的剥离步骤中，例如在通过激光照射来剥离生长基板18时，可以设为并非界面的GaN层并不分解，如图7所示那样作为较薄的层而残留于半导体模块1上的状态。其结果，可进一步改善半导体模块1的制作时的表面平滑化。
[小结]
本发明的形态1的半导体模块(1)的特征在于，具备：基板(配线基板11)；发光芯片(蓝色LED15)，其搭载于所述基板上；树脂(16)，其覆盖所述发光芯片的侧面及背面，且将所述发光芯片保持为水平；电极材料(电极14)，其设于所述基板的表面与所述发光芯片的背面之间，贯穿所述树脂，且将所述基板与所述发光芯片电连接；所述发光芯片的光出射面(表面)(151)自所述树脂露出，将所述光出射面(表面)与所述树脂的表面(161)配置于同一平面。
根据所述构成，可通过电极材料及树脂将发光芯片保持为水平状态。另外，可将半导体模块的发光分段的大小减小到发光芯片自身的大小，从而可对发光分段进行高分辨率。
本发明的形态2的半导体模块(1)的特征在于，具备：基板(配线基板11)；多个发光芯片(蓝色LED15)，其并排设置搭载于所述基板上；树脂(16)，其覆盖所述多个发光芯片的侧面及背面，且将所述多个发光芯片保持为水平；电极材料(电极14)，其设于所述基板的表面与所述多个发光芯片的背面之间，贯穿所述树脂，且将所述基板与所述多个发光芯片电连接；所述多个发光芯片的光出射面(表面)(151)自所述树脂露出，将所述光出射面(表面)与所述树脂的表面(161)配置于同一平面。
根据所述构成，可通过电极材料及树脂将多个发光芯片的全部保持为水平状态。由此可防止由于一些发光芯片倾斜而给人带来的发光分段的不适感。另外，可将半导体模块的多个发光分段的大小减小到多个发光芯片自身的大小，因此可使多个发光分段高分辨率。
本发明的形态3的半导体模块的特征在于，在所述形态1或2中，俯视下的所述发光芯片的纵宽及横宽为20μm以下。
本发明的形态4的半导体模块的特征在于，在所述形态1或2中，所述基板具有金属配线，所述电极材料由与所述金属配线连接的第一部分(基板侧电极141)及与所述发光芯片连接的第二部分(LED侧电极142)构成，所述第一部分中的与光出射方向平行的截面的第一面积与所述第二部分中的与所述光出射方向平行的截面的第二面积不同。
本发明的形态5的半导体模块的特征在于，在所述形态4中，所述第一面积大于所述第二面积。
根据所述构成，将电极的第二部分按压在基板上的固定力施加到电极上，因此可将发光芯片更进一步固定于基板上。
本发明的形态6的半导体模块的特征在于，在所述形态1或2中，所述树脂由包含第一层及第二层的至少两个层构成，所述第一层是配置于所述基板侧的第一树脂(白色系树脂162)，所述第二层是配置于所述第一树脂上的光反射率比所述第一树脂低的第二树脂(黑色系树脂163)。
根据所述构成，可防止向发光芯片的周围漏光。
本发明的形态7的显示装置的特征在于具备所述形态1至6中任一项的半导体模块。
本发明的形态8的制造方法是制造所述形态1至6中任一项的半导体模块的制造方法，其特征在于，具有在硬化之前，将液状的树脂在包含于50℃～200℃的温度范围的温度下填充于基板间的工序。
根据所述构成，变得容易将液状树脂正常地填充于基板间的空隙内。
本发明的形态9的制造方法的特征在于，在所述形态8中，所述温度范围为80℃～170℃。
根据所述构成，可减少损及硬化后的树脂的特性(密接性、散热性等)的可能。
本发明的形态10的制造方法的特征在于，在所述形态8中，所述温度范围为100℃～150℃。
根据所述构成，可进一步减小硬化后的树脂的上述特性的制品间偏差，因此可容易地制造半导体模块。
本发明的形态11的制造方法的特征在于，在所述形态8至10中任一项中，所述半导体模块具备：基板，其具有金属配线；电极，其配置于所述基板上，且与所述金属配线连接；发光元件，其配置于所述电极上，具有与所述基板侧为相反侧的光出射面；树脂，其至少覆盖所述基板上、所述发光元件的侧面的一部分及所述电极的阶差部位；邻接的所述发光元件的至少一部分在所述发光元件的光出射面侧相互连接。
根据所述构成，可使半导体模块的表面更平滑。
本发明的形态12的半导体模块的特征在于，具备：基板(配线基板11)，其具有金属配线(12)；电极(14)，其配置于所述基板上，且与所述金属配线连接；发光元件(蓝色LED15)，其与所述电极连接，且具有与所述基板侧为相反侧的光出射面；所述电极在所述电极的侧面具有阶差部位，且进一步具备树脂(树脂16)，该树脂(树脂16)至少覆盖所述基板上、所述发光元件的侧面的一部分、所述阶差部位。
根据所述构成，可将发光元件及电极更强地固定在所搭载的基板上。
本发明的形态13的半导体模块的特征在于，在所述形态12中，所述发光元件的所述光出射面与所述树脂的表面为大致同一面。
根据所述构成，可防止发光元件的发光自发光元件的侧面射出，因此可使发光元件的发光效率提高。
本发明的形态14的半导体模块的特征在于，具备：基板，其具有金属配线；电极，其配置于所述基板上，且与所述金属配线连接；发光元件，其配置于所述电极上，具有与所述基板侧为相反侧的光出射面；树脂，其至少覆盖所述基板上、所述发光元件的侧面的一部分及所述电极的阶差部位；邻接的所述发光元件的至少一部分在所述发光元件的光出射面侧相互连接。
根据所述构成，可使半导体模块的表面更平滑。
本发明并不限定于上述各实施方式，可在权利要求书中所示的范围内进行各种变更。将在不同实施方式中分别揭示的技术手段适宜组合而获得的实施方式也包含于本发明的技术范围内。也可以通过将各实施方式中所分别揭示的技术手段加以组合而形成新的技术特征。
附图标记说明
1 半导体模块
11 配线基板
12 金属配线
13 绝缘层
14 电极
15a 发光面
16 树脂
17 固定力
18 生长基板
19 分离槽
31 红色荧光体
32 绿色荧光体
33 透光性树脂
41 部分区域
42 中心点
43 发光范围
51 曲线
141 基板侧电极(第一部分)
142 LED侧电极(第二部分)
151 光出射面
161 表面
162 白色系树脂
163 黑色系树脂

Claims (11)

1.一种半导体模块，其特征在于，具备：
基板；
发光芯片，其搭载于所述基板上；
树脂，其覆盖所述发光芯片的侧面及背面，且将所述发光芯片保持为水平；
电极材料，其设于所述基板的表面与所述发光芯片的所述背面之间，贯穿所述树脂，且将所述基板与所述发光芯片电连接；
所述发光芯片的光出射面(表面)自所述树脂露出，
将所述光出射面(表面)与所述树脂的表面配置于同一平面。
2.一种半导体模块，其特征在于，具备：
基板；
多个发光芯片，其并排设置搭载于所述基板上；
树脂，其覆盖所述多个发光芯片的侧面及背面，且将所述多个发光芯片保持为水平；
电极材料，其设于所述基板的表面与所述多个发光芯片的所述背面之间，贯穿所述树脂，且将所述基板与所述多个发光芯片电连接；
所述多个发光芯片的光出射面(表面)自所述树脂露出，
将所述光出射面(表面)与所述树脂的表面配置于同一平面。
3.根据权利要求1或2所述的半导体模块，其特征在于，
俯视下的所述发光芯片的纵宽及横宽为20μm以下。
4.根据权利要求1或2所述的半导体模块，其特征在于，
所述基板具有金属配线，
所述电极材料由
与所述金属配线连接的第一部分、及
与所述发光芯片连接的第二部分构成，
所述第一部分中的与光出射方向平行的截面的第一面积与所述第二部分中的与所述光出射方向平行的截面的第二面积不同。
5.根据权利要求4所述的半导体模块，其特征在于，
所述第一面积大于所述第二面积。
6.根据权利要求1或2所述的半导体模块，其特征在于，
所述树脂由包含第一层及第二层的至少两个层构成，
所述第一层是配置于所述基板侧的第一树脂，所述第二层是配置于所述第一树脂上的光反射率比所述第一树脂低的第二树脂。
7.一种显示装置，其特征在于具备根据权利要求1至6中任一项所述的半导体模块。
8.一种制造方法，其是制造根据权利要求1至6中任一项所述的半导体模块的制造方法，其特征在于，
具有在硬化之前，将液状的树脂在包含于50℃～200℃的温度范围的温度下填充于基板间的工序。
9.根据权利要求8所述的制造方法，其特征在于，
所述温度范围为80℃～170℃。
10.根据权利要求8所述的制造方法，其特征在于，
所述温度范围为100℃～150℃。
11.根据权利要求8至10中任一项所述的制造方法，其特征在于，
所述半导体模块具备：
基板，其具有金属配线；
电极，其配置于所述基板上，且与所述金属配线连接；
发光元件，其配置于所述电极上，具有与所述基板侧为相反侧的光出射面；
树脂，其至少覆盖所述基板上、所述发光元件的侧面的一部分、及所述电极的阶差部位；
邻接的所述发光元件的至少一部分在所述发光元件的光出射面侧相互连接。
CN201880036113.3A 2017-05-30 2018-03-08 半导体模块、显示装置及半导体模块的制造方法 Pending CN110741484A (zh)

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