JPWO2018220932A1 - 半導体モジュール、表示装置、および半導体モジュールの製造方法。 - Google Patents
半導体モジュール、表示装置、および半導体モジュールの製造方法。 Download PDFInfo
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- JPWO2018220932A1 JPWO2018220932A1 JP2019521961A JP2019521961A JPWO2018220932A1 JP WO2018220932 A1 JPWO2018220932 A1 JP WO2018220932A1 JP 2019521961 A JP2019521961 A JP 2019521961A JP 2019521961 A JP2019521961 A JP 2019521961A JP WO2018220932 A1 JPWO2018220932 A1 JP WO2018220932A1
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- semiconductor module
- light
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Abstract
Description
図1および図2を参照して、本発明に係る実施形態1について以下に説明する。
図1は、本発明の実施形態1に係る半導体モジュール1の断面構成を示す断面図である。この図に示すように、半導体モジュール1は、配線基板11、金属配線12、絶縁層13、電極14、青色LED15、および樹脂16を備えている。
配線基板11は、少なくともその表面が青色LED15と接続できるよう、配線を形成したものが利用できる。配線基板11の材料は、基板全体が窒化アルミニウムで構成される窒化アルミニウムの単結晶、多結晶などの結晶性基板、さらに焼結基板、他の材料としてアルミナなどのセラミック、ガラス、Si等の半導体あるいは金属基板、またそれらの表面に窒化アルミニウム薄膜層が形成された基板など、積層体、複合体が使用できる。金属性基板、セラミック基板は放熱性が高いため、好ましい。
金属配線12は、青色LED15に制御電圧を供給する制御回路を少なくとも含む配線である。金属配線12の形成は、エッチング法などによって、金属層のパターニングが施される。たとえば、Si基板表面上にAlまたはCu等からなる金属配線12等を形成する例が挙げられる。さらに、金属配線12を保護する目的で、基板の金属配線12が形成された側の表面にSiO2等の薄膜からなる保護膜を形成してもよい。
絶縁層13は、酸化膜層および/または樹脂層によって構成される、絶縁性の層である。絶縁層13は、配線基板11と電極14とが直接接触することを防ぐ。
電極14は、金属配線12と青色LED15の表面に設けられた金属端子(不図示)とを電気的に接続する、パッド電極として機能するもので、バンプとも呼ばれる。電極14における金属配線12に接続される第1部分は基板側電極141であり、電極14における、青色LED15の表面に設けられた金属端子(不図示)に接続される第2部分は、LED側電極142である。基板側電極141およびLED側電極142は、たとえば、Au、Pt、Pd、Rh、Ni、W、Mo、Cr、Tiのいずれかの金属またはこれらの合金やそれらの組み合わせから成る。組合せの例としては、基板側電極141およびLED側電極142を金属電極層として構成する場合、下面からW/Pt/Au、Rh/Pt/Au、W/Pt/Au/Ni、Pt/Au、Ti/Pt/Au、Ti/Rh、もしくはTiW/Auの積層構造が考えられる。
青色LED15は、公知のもの、具体的には半導体発光素子を利用できる。中でも、GaN系半導体は、蛍光物質を効率良く励起できる短波長が発光可能であるため、青色LED15として好ましい。
樹脂16は、青色LED15および電極14を配線基板11に固定させると共に、青色LED15の側面から光が漏れることを防ぐ。樹脂16は、アンダーフィルとも呼ばれ、一例として液状である樹脂を硬化させて形成することが可能である。樹脂16は、半導体モジュール1における、配線基板11の上部と、青色LED15の側面の一部と、電極14の側面とを少なくとも含めた領域に、埋め込まれている。
図1においては、基板側電極141の断面積がLED側電極142の断面積と異なるので、樹脂16は、基板側電極141の側面およびLED側電極142の側面に加えて、いずれかの電極の表面がむき出しになった領域(段差面)にも、密着される。段差面に対し、樹脂16の吸着作用が働くことによって、基板側電極141およびLED側電極142が配線基板11により強く固定される。
図2は、本発明の実施形態1に係る半導体モジュール1の製造方法を説明する図である。
まず、図2の(a)に示すように、成長基板18に青色LED15を設ける。成長基板18は、青色LED15の半導体層をエピタキシャル成長させる基板である。窒化物半導体における基板としては、C面、R面、及びA面のいずれかを主面とするサファイアやスピネル(MgAl2O4)のような絶縁性基板、また炭化珪素(6H、4H、3C)、Si、ZnS、ZnO、GaAs、ダイヤモンド、及び窒化物半導体と格子接合するニオブ酸リチウム、ガリウム酸ネオジウムなどの酸化物基板、GaNやAlNなどの窒化物半導体基板がある。
青色LED15の形成後、図2の(b)に示すように、青色LED15の上に複数のLED側電極142を形成する。この形成には、周知の一般的な電極形成技術が使用される。LED側電極142の代表的な材料は、たとえばAuである。
LED側電極142の形成後、図2の(c)に示すように、青色LED15に複数の分離溝19を形成する。この形成には、標準的な半導体選択エッチングプロセスが使用される。図2では、隣り合うLED側電極142の間に、分離溝19を形成する。形成される分離溝19は、成長基板18の表面にまで達する。分離溝19が形成されることによって、一枚の青色LED15が、成長基板18の表面において複数の個別の青色LED15(発光チップ)に分割される。
分離溝19の形成後、図2の(d)に示すように、金属配線12、絶縁層13、および基板側電極141が予め形成された配線基板11を用意する。配線基板11に対する基板側電極141の形成には、周知の一般的な電極形成技術が使用される。基板側電極141の代表的な材料は、たとえばAuである。配線基板11の用意と並行して、図2の(d)に示すように、成長基板18を反転させる。反転後、各基板側電極141と各LED側電極142とが対向するように、配線基板11と成長基板18とを位置合わせする。
位置合わせの完了後、図2の(e)に示すように、配線基板11と成長基板18とを貼り合わせる。その際、既存の貼り合わせ技術を使用して、対応する基板側電極141およびLED側電極142が接合するように、配線基板11および成長基板18を加圧によって上下から抑える。これにより、対応する基板側電極141およびLED側電極142が一体化され、電極14を構成する。
貼り合わせ工程の完了後、配線基板11と成長基板18との間にできた空隙内に、液状樹脂16aを充填する。充填後の状態を図2の(f)に示す。この際、たとえば、液状樹脂16aで満たされた容器内に、貼り合わせ後の状態で浸せばよい。液状樹脂16aの主材料は特に限定されないが、たとえばエポキシ樹脂であることが好ましい。なお、液状樹脂16aの注入方法は上記以外に注射針、特に配線基板11と青色LED15との間にできた空隙のサイズに合ったマイクロニードルで液状樹脂16aを注入する方法でもよい。この場合の注射針の材料としては金属製、またはプラスチック製などが用いられる。
充填工程の完了後、図2の(g)に示すように、成長基板18を剥離させる。この工程には、既存の剥離技術が使用される。既存の剥離手段の一例として、レーザー光の照射を利用した剥離技術を利用することができる。たとえばLEDの成長基板にサファイアなどの透明基板を用い、発光素子層として窒化物半導体を結晶成長した場合、透明基板側からレーザー光を一定条件で照射することにより成長基板と結晶成長層との界面に与えるダメージを軽減することが可能である。なお、その他の手段としては湿式エッチング法、研削、または研磨法などを用いた成長基板18の剥離も可能である。
図3を参照して、本発明に係る実施形態2について以下に説明する。本実施形態において実施形態1と共通する部材には、同一の部材番号を付し、特に必要がない限りその詳細な説明を繰り返さない。
図4を参照して、本発明に係る実施形態3について以下に説明する。本実施形態において実施形態1〜2と共通する部材には、同一の部材番号を付し、特に必要がない限りその詳細な説明を繰り返さない。
図5および6を参照して、本発明に係る実施形態4について以下に説明する。本実施形態において実施形態1〜3の少なくともいずれかと共通する部材には、同一の部材番号を付し、特に必要がない限りその詳細な説明を繰り返さない。
図7を参照して、本発明に係る実施形態4について以下に説明する。本実施形態において実施形態1〜3の少なくともいずれかと共通する部材には、同一の部材番号を付し、特に必要がない限りその詳細な説明を繰り返さない。
本発明の態様1に係る半導体モジュール(1)は、基板(配線基板11)と、前記基板上に搭載された発光チップ(青色LED15)と、前記発光チップの側面および裏面を被覆し、かつ前記発光チップを水平に保持する樹脂(16)と、前記基板の表面と前記発光チップの裏面との間に設けられ、前記樹脂を貫通し、かつ前記基板と前記発光チップとを電気的に接続する電極材(電極14)とを備え、前記発光チップの光出射面(表面)(151)が前記樹脂から露出してなり、前記光出射面(表面)と前記樹脂の表面(161)とを同一の平面に配置してなることを特徴としている。
11 配線基板
12 金属配線
13 絶縁層
14 電極
15a 発光面
16 樹脂
17 固定力
18 成長基板
19 分離溝
31 赤蛍光体
32 緑蛍光体
33 透光性質樹脂
41 部分領域
42 中心ドット
43 発光範囲
51 曲線
141 基板側電極(第1部分)
142 LED側電極(第2部分)
151 光出射面
161 表面
162 白色系樹脂
163 黒色系樹脂
Claims (11)
- 基板と、
前記基板上に搭載された発光チップと、
前記発光チップの側面および裏面を被覆し、かつ前記発光チップを水平に保持する樹脂と、
前記基板の表面と前記発光チップの前記裏面との間に設けられ、前記樹脂を貫通し、かつ前記基板と前記発光チップとを電気的に接続する電極材とを備え、
前記発光チップの光出射面(表面)が前記樹脂から露出してなり、
前記光出射面(表面)と前記樹脂の表面とを同一の平面に配置してなることを特徴とする半導体モジュール。 - 基板と、
前記基板上に並置して搭載された複数の発光チップと、
前記複数の発光チップの側面および裏面を被覆し、かつ前記複数の発光チップを水平に保持する樹脂と、
前記基板の表面と前記複数の発光チップの前記裏面との間に設けられ、前記樹脂を貫通して、かつ前記基板と前記複数の発光チップとを電気的に接続する電極材とを備え、
前記複数の発光チップの光出射面(表面)が前記樹脂から露出してなり、
前記光出射面(表面)と前記樹脂の表面とを同一の平面に配置してなることを特徴とする半導体モジュール。 - 上面視における前記発光チップの縦幅および横幅は、20μm以下であることを特徴とする請求項1または2に記載の半導体モジュール。
- 前記基板は、金属配線を有しており、
前記電極材は、
前記金属配線に接続される第1部分と、
前記発光チップに接続される第2部分とによって構成され、
前記第1部分における光出射方向と並行な断面の第1面積は、前記第2部分における前記光出射方向と並行な断面の第2面積と異なることを特徴とする請求項1または2に記載の半導体モジュール。 - 前記第1面積は前記第2面積よりも大きいことを特徴とする請求項4に記載の半導体モジュール。
- 前記樹脂は、第1層および第2層を含む少なくとも2つの層によって構成され、
前記第1層は、前記基板側に配置される第1樹脂であり、前記第2層は、前記第1樹脂の上に配置される、前記第1樹脂よりも光反射率の低い第2樹脂であることを特徴とする請求項1または2に記載の半導体モジュール。 - 請求項1〜6のいずれか1項に記載の半導体モジュールを備えていることを特徴とする表示装置。
- 請求項1〜6のいずれか1項に記載の半導体モジュールを製造する製造方法であって、
硬化される前には液状の樹脂を、50℃〜200℃の温度範囲に含まれる温度下で基板間に充填する工程を有することを特徴とする製造方法。 - 前記温度範囲は、80℃〜170℃であることを特徴とする請求項8に記載の製造方法。
- 前記温度範囲は、100℃〜150℃であることを特徴とする請求項8に記載の製造方法。
- 前記半導体モジュールは、
金属配線を有する基板と、
前記基板上に配置され、かつ前記金属配線に接続される電極と、
前記電極上に配置され、前記基板側とは反対側の光出射面を有する発光素子と、
前記基板上と、前記発光素子の側面の一部と、前記電極における段差箇所とを少なくとも覆う樹脂とを備えており、
隣り合う前記発光素子の少なくとも一部が、前記発光素子の光出射面側において互いに接続されていることを特徴とする請求項8〜10のいずれか1項に記載の製造方法。
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