CN110702237A - Superconducting nanowire single photon detector array capable of distinguishing photon energy - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J11/00—Measuring the characteristics of individual optical pulses or of optical pulse trains
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
Abstract
The invention discloses a superconductive nanowire single photon detector array capable of distinguishing photon energy, which comprises: a beam of broad spectrum light is incident from the left end optical fiber, and after passing through the optical fiber wavelength division multiplexer, light with different photon energies is output from different optical fiber channels at the right end and is connected to the cryostat; a superconducting nanowire single-photon detector is printed on the end face of the terminal of each optical fiber in the cryostat, the single-photon detector covers the fiber core of the optical fiber, the positive electrode and the negative electrode are arranged on the end face of the fiber cladding, and the reading cable is connected with the positive electrode and the negative electrode; the superconducting nano single photon detector is connected in a bias and reading circuit and used for reading the photon counting rate. The invention has photon energy distinguishing capacity and can be applied to a wavelength division multiplexing quantum key distribution system.
Description
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a superconducting nanowire single photon detector array capable of distinguishing photon energy.
Background
The Superconducting Nanowire Single Photon Detector (SNSPD) has the advantages of high detection efficiency, high counting rate, small dark counting rate, small time domain jitter, wide response spectrum and the like, and is an indispensable experimental instrument in near infrared and visible light band quantum optical experiments. The conversion characteristic that a superconducting nanowire is converted from a superconducting state to a resistive state under single-photon excitation is utilized, an optical signal is converted into a voltage signal, the voltage signal is read by a reading circuit, and photon counting is realized through counting of the voltage signal.
The conventional superconducting nanowire single photon detector can only detect the number of single photons, but cannot distinguish photon energy or light wavelength.
Disclosure of Invention
The invention provides a superconducting nanowire single photon detector array capable of distinguishing photon energy, which is integrated by utilizing a superconducting nanowire single photon detector, an optical fiber and a wavelength division multiplexer, solves the limitation of the traditional superconducting nanowire single photon detector on certain application aspects such as a quantum key distribution system because the traditional superconducting nanowire single photon detector does not have the capability of distinguishing different photon energy or optical wavelength, has the capability of distinguishing the photon energy, can be applied to a wavelength division multiplexing quantum key distribution system, and is described in detail as follows:
a superconducting nanowire single photon detector array capable of distinguishing photon energy, comprising:
a beam of broad spectrum light is incident from the left end optical fiber, and after passing through the optical fiber wavelength division multiplexer, light with different photon energies is output from different optical fiber channels at the right end and is connected to the cryostat;
a superconducting nanowire single-photon detector is printed on the end face of the terminal of each optical fiber in the cryostat, the single-photon detector covers the fiber core of the optical fiber, the positive electrode and the negative electrode are arranged on the end face of the fiber cladding, and the reading cable is connected with the positive electrode and the negative electrode;
the superconducting nano single photon detector is connected in a bias and reading circuit and used for reading the photon counting rate.
The end face of the optical fiber is a round optical fiber joint/micro-convex spherical surface grinding and polishing interface (FC/PC), and a titanium electrode is bonded on the protective sleeve part of the end face of the optical fiber.
Furthermore, two ends of the superconducting nanowire single-photon detector are connected with the electrodes, and the position of the photosensitive area covered by the superconducting nanowires is superposed with the position of the fiber core of the optical fiber.
Wherein the single photon detector array further comprises:
1) processing a superconducting nanowire single-photon detector by taking the film as a substrate;
2) manufacturing a titanium electrode on the right side optical fiber end face of the wavelength division multiplexer;
3) and transferring the superconducting nanowire single photon detector onto the end face of the optical fiber on the right side of the wavelength division multiplexer.
Further, the processing of the superconducting nanowire single photon detector with the film as the substrate specifically comprises:
growing a layer of silicon nitride with a certain thickness by a plasma enhanced chemical vapor deposition method, sputtering a layer of superconducting thin film material with a certain thickness on the silicon nitride by magnetron sputtering, and processing a gold electrode on the superconducting thin film;
transferring the nanowire pattern to an electron beam exposure glue through electron beam exposure, and etching the nanowire pattern by using a reactive ion beam etching method by using the electron beam exposure glue as a mask;
and opening a corrosion window through photoetching, corroding the silicon, taking down the superconducting nanowire single-photon detector from the film, and plating silver on one surface of the silicon substrate.
The transfer printing of the superconducting nanowire single photon detector onto the end face of the optical fiber on the right side of the wavelength division multiplexer specifically comprises the following steps:
the wide-spectrum light is incident from the left optical fiber, is divided into lights with different wavelengths according to wavelength intervals after passing through a wavelength division multiplexer, and is output from different optical fibers on the right side;
the electrode on the end face of the optical fiber is contacted with the electrode on the superconducting nanowire single photon detector, and the photosensitive area of the detector is aligned and coupled with the optical fiber in a near field;
the superconducting nanowire single-photon detectors are transferred on the end faces of the optical fibers to form a superconducting nanowire single-photon detector array, and the superconducting nanowire single-photon detectors at the tail ends of the optical fibers detect photons with different energies, so that the superconducting nanowire single-photon detectors can distinguish different photon energies.
The technical scheme provided by the invention has the beneficial effects that:
before the invention, the application range of the superconducting nanowire single-photon detector is limited under the condition that photons with different energies need to be distinguished, for example, the conventional superconducting nanowire single-photon detector cannot be applied to a quantum key distribution system; the invention provides a superconducting nanowire single-photon detector array capable of distinguishing photon energy, widens the application range of the superconducting nanowire single-photon detector, can be applied to a wavelength division multiplexing quantum key distribution system, and solves the problem of multi-channel cooperative work in quantum key distribution.
Drawings
FIG. 1 is a block diagram of a superconducting nanowire single photon detector array with photon energy discrimination;
FIG. 2 is a flow chart of a superconducting nanowire single photon detector processing with a thin film as a substrate;
wherein, (a) is a machining electrode; (b) processing the nanowire for electron beam exposure; (c) throwing photoresist; (d) etching a corrosion window for photoetching, and corroding silicon; (e) taking down the superconducting nanowire single photon detector on the film; (f) is a silver-plated film.
FIG. 3 shows a first method for fabricating a TiAu electrode on an end face of an optical fiber:
wherein (a) is an untreated fiber end face; (b) gold plating the end face of the optical fiber; (c) the gold electrode is manufactured by etching gold by using a focused ion beam technology.
FIG. 4 shows a second method for fabricating a TiAu electrode on an end face of an optical fiber:
wherein (a) is an untreated fiber end face; (b) placing a metal block on the end face of the optical fiber; (c) plating gold with a certain thickness; (d) to remove the metal block, a gold electrode is obtained.
FIG. 5 is a schematic diagram of a process of transferring the superconducting nanowire single photon detector onto the end face of an optical fiber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
Compared with the traditional superconducting nanowire single-photon detector, the superconducting nanowire single-photon detector array capable of distinguishing photon energy provided by the embodiment of the invention has wider application range. For example: the superconducting nanowire single-photon detector array capable of distinguishing photon energy can be used in a quantum key distribution system of wavelength division multiplexing, and the problem of multi-channel cooperative work in the quantum key distribution process can be solved by designing the superconducting nanowire single-photon detector array capable of distinguishing photon energy.
Example 1 the general technical solution of the invention is shown in figure 1: a beam of broad spectrum light is incident from the left end optical fiber, and after passing through the optical fiber wavelength division multiplexer, light with different photon energy (wavelength) is output from different optical fiber channels (optical fiber channel 1...... optical fiber channel n) at the right end and is connected to the cryostat; the end face of the terminal of each optical fiber in the cryostat is printed with a superconducting nanowire single-photon detector, the superconducting nanowire single-photon detector covers the fiber core of the optical fiber, the anode and the cathode are arranged on the end face of the fiber cladding, and the reading cable is connected with the anode and the cathode; the superconducting nano single photon detector is connected in a bias and reading circuit and used for reading the photon counting rate.
Therefore, the superconducting nanowire single photon detector array capable of distinguishing photon energy is realized according to the response counting rates of SNSPDs on different optical fiber channels.
The specific technical scheme comprises the following aspects:
the first technology is to process a high-efficiency superconducting nanowire single-photon detector by taking a film as a substrate; the second technique is to process the end face of the optical fiber, directly transfer the superconducting nanowire single photon detector and the thin film substrate to the end face of the optical fiber, make the photosensitive area of the detector and the optical fiber coupled in a near field alignment, make the electrode on the thin film substrate contact with the electrode made on the end face of the optical fiber, and process the detected electric pulse through a subsequent signal processing system.
Part of the technology is shown in fig. 2, and the processing steps are as follows: (a) processing a gold electrode and a superconducting film on a silicon substrate and a silicon nitride substrate; (b) processing the superconducting nanowire on the superconducting film through electron beam exposure and reactive ion beam etching; (c) coating photoresist on the upper surface of the chip, photoetching and developing to prepare a corrosion window; (d) corroding the superconducting film, silicon nitride and silicon to process a groove; (e) taking down the superconducting nanowire single photon detector from the substrate; (f) and back is plated with silver. Finally, the superconducting nanowire single photon detector with the advantages of high performance, high efficiency and the like is prepared. Alternative materials for the superconducting thin film include: niobium nitride, titanium niobium nitride, tungsten silicide, molybdenum silicide, and the like.
The technology can be divided into the following four points:
firstly, manufacturing a gold contact pad (titanium electrode) on the end face of the optical fiber ferrule on the right side of the wavelength division multiplexer;
designing electrodes and a photosensitive area of the superconducting nanowire single-photon detector;
thirdly, transferring the superconducting nanowire single photon detector onto the end face of the optical fiber;
fourthly, wire bonding and packaging.
For the first point, the left end fiber of the wavelength division multiplexer inputs a broad spectrum light, and the output light of different fiber output ends on the right side has different wavelengths, namely the output photon energy is different, thereby realizing the photon output with different energy. The wavelength division multiplexer can be divided into a dense wavelength division multiplexer and a sparse wavelength division multiplexer according to channel intervals, the channel interval of the dense wavelength division multiplexer is 0.2 nanometers to 1.2 nanometers, the channel interval of the sparse wavelength division multiplexer is generally 20 nanometers, and the dense wavelength division multiplexer and the sparse wavelength division multiplexer are suitable for both the dense wavelength division multiplexer and the sparse wavelength division multiplexer. The fiber end face is an FC/PC (round fiber connector/micro-convex spherical surface grinding and polishing) interface, and a titanium electrode is designed and bonded on the protective sleeve part of the fiber end face, as shown in figures 3 and 4.
For the second point, two ends of the superconducting nanowire single photon detector are connected with the electrodes, and the position of the photosensitive area covered by the superconducting nanowires is overlapped with the position of the fiber core of the optical fiber.
For the third point, as shown in fig. 5, the superconducting nanowire single photon detector film is turned over and adhered to the end face of the FC/PC optical fiber sleeve, the electrode on the end face of the optical fiber is in contact with the electrode on the superconducting nanowire single photon detector, the photosensitive region of the detector is aligned and coupled with the optical fiber in the near field, and strong van der waals force is generated between the gold electrodes in the transfer-assembly process to fix and align the superconducting nanowire single photon detector and the optical fiber core.
For the fourth point, the readout cable is connected to the positive and negative poles of the fiber end face and is switched into the external bias and readout circuit.
Example 2
The best embodiment is as follows:
single photon detector for processing superconducting nanowire by taking film as substrate
Growing a layer of silicon nitride with a certain thickness by a plasma enhanced chemical vapor deposition method, sputtering a layer of superconducting thin film material with a certain thickness on the silicon nitride in a magnetron sputtering mode, and processing a gold electrode on the superconducting thin film;
transferring the nanowire pattern to an electron beam exposure glue by an electron beam exposure method, and etching the nanowire pattern by a reactive ion beam etching method by using the electron beam exposure glue as a mask;
and opening a corrosion window by a photoetching method, corroding silicon, taking down the superconducting nanowire single-photon detector from the film, and plating silver on one surface of the silicon substrate.
Secondly, manufacturing a titanium electrode on the right side optical fiber end face of the wavelength division multiplexer
The method comprises the following steps:
plating a layer of gold film on the surface of the optical fiber by methods such as vapor deposition and the like, and etching the gold electrode by methods such as a focused ion beam technology and the like.
The second method comprises the following steps:
and placing a metal block on the part of the end face of the optical fiber, which is not required to be covered by gold, evaporating a gold film with the same thickness on the metal block and the part which is not covered by the metal block by using an evaporation method, and taking down the metal block to obtain the gold electrode.
Thirdly, transferring the superconducting nanowire single photon detector to the end face of the optical fiber on the right side of the wavelength division multiplexer
The wide-spectrum light is incident from the left side optical fiber, passes through the wavelength division multiplexer, is divided into lights with different wavelengths according to certain wavelength intervals through the wavelength division multiplexer, and is output from different optical fibers on the right side, wherein the lights with different wavelengths correspond to different photon energies.
The superconducting nanowire single photon detector film is turned over and adhered to the end face of the FC/PC optical fiber sleeve, an electrode on the end face of the optical fiber is in contact with an electrode on the superconducting nanowire single photon detector, and a photosensitive area of the detector is aligned and coupled with the optical fiber in a near field, so that the detector can detect photons output by the optical fiber.
The different fibers on the right output different wavelengths of light, i.e. the energy of the output photons, is different. The end face of each optical fiber is transferred with the superconducting nanowire single-photon detector as shown in the above, so that a superconducting nanowire single-photon detector array is formed, and the energy of photons detected by the superconducting nanowire single-photon detectors at the tail ends of different optical fibers is different, so that the superconducting nanowire single-photon detector can distinguish different photon energies.
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited, as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (6)
1. A superconducting nanowire single photon detector array capable of distinguishing photon energy, comprising:
a beam of broad spectrum light is incident from the left end optical fiber, and after passing through the optical fiber wavelength division multiplexer, light with different photon energies is output from different optical fiber channels at the right end and is connected to the cryostat;
a superconducting nanowire single-photon detector is printed on the end face of the terminal of each optical fiber in the cryostat, the single-photon detector covers the fiber core of the optical fiber, the positive electrode and the negative electrode are arranged on the end face of the fiber cladding, and the reading cable is connected with the positive electrode and the negative electrode;
the superconducting nano single photon detector is connected in a bias and reading circuit and used for reading the photon counting rate.
2. The superconducting nanowire single photon detector array of claim 1, wherein,
the end face of the optical fiber is a round optical fiber joint/micro-convex spherical surface grinding and polishing interface, and a titanium electrode is bonded on the protective sleeve part of the end face of the optical fiber.
3. The superconducting nanowire single photon detector array capable of distinguishing photon energy according to claim 1, wherein two ends of the superconducting nanowire single photon detector are connected with electrodes, and the position of a photosensitive region covered by the superconducting nanowires is coincident with the position of a fiber core of an optical fiber.
4. The superconducting nanowire single photon detector array of claim 1, wherein the single photon detector array further comprises:
1) processing a superconducting nanowire single-photon detector by taking the film as a substrate;
2) manufacturing a titanium electrode on the right side optical fiber end face of the wavelength division multiplexer;
3) and transferring the superconducting nanowire single photon detector onto the end face of the optical fiber on the right side of the wavelength division multiplexer.
5. The superconducting nanowire single photon detector array capable of distinguishing photon energy according to claim 4, wherein the processing of the superconducting nanowire single photon detector with the film as the substrate is specifically as follows:
growing a layer of silicon nitride with a certain thickness by a plasma enhanced chemical vapor deposition method, sputtering a layer of superconducting thin film material with a certain thickness on the silicon nitride by magnetron sputtering, and processing a gold electrode on the superconducting thin film;
transferring the nanowire pattern to an electron beam exposure glue through electron beam exposure, and etching the nanowire pattern by using a reactive ion beam etching method by using the electron beam exposure glue as a mask;
and opening a corrosion window through photoetching, corroding the silicon, taking down the superconducting nanowire single-photon detector from the film, and plating silver on one surface of the silicon substrate.
6. The array of superconducting nanowire single photon detectors capable of distinguishing photon energy according to claim 4, wherein the transferring the superconducting nanowire single photon detectors onto the end surface of the optical fiber on the right side of the wavelength division multiplexer is specifically:
the wide-spectrum light is incident from the left optical fiber, is divided into lights with different wavelengths according to wavelength intervals after passing through a wavelength division multiplexer, and is output from different optical fibers on the right side;
the electrode on the end face of the optical fiber is contacted with the electrode on the superconducting nanowire single photon detector, and the photosensitive area of the detector is aligned and coupled with the optical fiber in a near field;
the superconducting nanowire single-photon detectors are transferred on the end faces of the optical fibers to form a superconducting nanowire single-photon detector array, and the superconducting nanowire single-photon detectors at the tail ends of the optical fibers detect photons with different energies, so that the superconducting nanowire single-photon detectors can distinguish different photon energies.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111443442A (en) * | 2020-03-18 | 2020-07-24 | 中国科学院上海微***与信息技术研究所 | Coupling device and method for SNSPD array and optical waveguide array |
| CN111637981A (en) * | 2020-06-28 | 2020-09-08 | 天津大学 | Photon number resolution detector and system thereof |
| CN112798116A (en) * | 2021-01-13 | 2021-05-14 | 南京大学 | Intermediate infrared superconducting nanowire single photon detector |
| CN113252167A (en) * | 2021-05-19 | 2021-08-13 | 南京大学 | Wide-spectrum high-efficiency superconducting single photon detector and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353464A (en) * | 2011-07-14 | 2012-02-15 | 清华大学 | Superconductive nanowire single-photon detector capable of distinguishing photon number and preparation method thereof |
| CN104677509A (en) * | 2015-01-26 | 2015-06-03 | 天津大学 | Technology for processing nanowire single-photon detector by using micro-nano mask plate |
| CN104752534A (en) * | 2015-04-27 | 2015-07-01 | 南京大学 | Superconductive nanowire single-photon detector and manufacturing method thereof |
| CN105374928A (en) * | 2015-11-17 | 2016-03-02 | 天津大学 | Superconducting fractal nanowire single-photon detector and preparation method thereof |
| CN106375089A (en) * | 2016-10-20 | 2017-02-01 | 浙江神州量子网络科技有限公司 | Receiving terminal for quantum key distribution system and quantum key distribution system |
| CN108362389A (en) * | 2018-02-02 | 2018-08-03 | 中国科学院上海微***与信息技术研究所 | Improve the method and system of superconducting nano-wire single-photon detector counting rate |
| CN108666388A (en) * | 2017-03-31 | 2018-10-16 | 中国科学院上海微***与信息技术研究所 | The superconducting nano-wire single-photon detector of integrated optics film filter |
| CN108663671A (en) * | 2018-05-15 | 2018-10-16 | 合肥菲涅尔光电科技有限公司 | Laser radar system based on DWDM |
-
2019
- 2019-09-12 CN CN201910861965.2A patent/CN110702237A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353464A (en) * | 2011-07-14 | 2012-02-15 | 清华大学 | Superconductive nanowire single-photon detector capable of distinguishing photon number and preparation method thereof |
| CN104677509A (en) * | 2015-01-26 | 2015-06-03 | 天津大学 | Technology for processing nanowire single-photon detector by using micro-nano mask plate |
| CN104752534A (en) * | 2015-04-27 | 2015-07-01 | 南京大学 | Superconductive nanowire single-photon detector and manufacturing method thereof |
| CN105374928A (en) * | 2015-11-17 | 2016-03-02 | 天津大学 | Superconducting fractal nanowire single-photon detector and preparation method thereof |
| CN106375089A (en) * | 2016-10-20 | 2017-02-01 | 浙江神州量子网络科技有限公司 | Receiving terminal for quantum key distribution system and quantum key distribution system |
| CN108666388A (en) * | 2017-03-31 | 2018-10-16 | 中国科学院上海微***与信息技术研究所 | The superconducting nano-wire single-photon detector of integrated optics film filter |
| CN108362389A (en) * | 2018-02-02 | 2018-08-03 | 中国科学院上海微***与信息技术研究所 | Improve the method and system of superconducting nano-wire single-photon detector counting rate |
| CN108663671A (en) * | 2018-05-15 | 2018-10-16 | 合肥菲涅尔光电科技有限公司 | Laser radar system based on DWDM |
Non-Patent Citations (1)
| Title |
|---|
| W. J. ZHANG等: "Fiber-coupled superconducting nanowire single-photon detectors integrated with a bandpass filter on the fiber end-face", 《SUPERCONDUCTOR SCIENCE AND TECHNOLOGY》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111443442A (en) * | 2020-03-18 | 2020-07-24 | 中国科学院上海微***与信息技术研究所 | Coupling device and method for SNSPD array and optical waveguide array |
| CN111443442B (en) * | 2020-03-18 | 2022-03-25 | 中国科学院上海微***与信息技术研究所 | Coupling device and method for SNSPD array and optical waveguide array |
| CN111637981A (en) * | 2020-06-28 | 2020-09-08 | 天津大学 | Photon number resolution detector and system thereof |
| CN111637981B (en) * | 2020-06-28 | 2022-05-27 | 天津大学 | Photon number resolution detector and system thereof |
| CN112798116A (en) * | 2021-01-13 | 2021-05-14 | 南京大学 | Intermediate infrared superconducting nanowire single photon detector |
| CN113252167A (en) * | 2021-05-19 | 2021-08-13 | 南京大学 | Wide-spectrum high-efficiency superconducting single photon detector and preparation method thereof |
| CN113252167B (en) * | 2021-05-19 | 2022-05-17 | 南京大学 | Wide-spectrum high-efficiency superconducting single photon detector and preparation method thereof |
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