CN100499181C - Te-In-Hg photoelectronic detector - Google Patents
Te-In-Hg photoelectronic detector Download PDFInfo
- Publication number
- CN100499181C CN100499181C CNB2006100176663A CN200610017666A CN100499181C CN 100499181 C CN100499181 C CN 100499181C CN B2006100176663 A CNB2006100176663 A CN B2006100176663A CN 200610017666 A CN200610017666 A CN 200610017666A CN 100499181 C CN100499181 C CN 100499181C
- Authority
- CN
- China
- Prior art keywords
- transparent metal
- metal electrode
- pectination
- comb
- indium mercury
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
The related Hg3In2Te photo detector comprises: a Hg3In2Te wafer, a passivated protective layer on front face of the wafer, a couple of opposite etching grooves throughout the protective layer, an anodization layer growing in groove, and a transparent metal electrode layer growing on surface of anodization layer to form a couple of electrodes. Compared with common single Schottky P-N junction detector, this invention reduces junction capacitance, and improves response speed and sensitivity greatly.
Description
Technical field
The invention belongs to the photoelectron technology field, relate to a kind of photodetector manufacturing of adopting the structure of the brilliant made of semiconductor bulk.
Background technology
Tellurium indium mercury (Hg
3-3xIn
2XTe
3) be a kind of ternary semiconductor material, its band structure is a direct band gap, has high internal quantum efficiency, energy gap is adjustable, with the proportional linear relationship of component x, when work temperature=300K, Hg
3In
2Te
6(x=0.5) energy gap is 0.74eV, and corresponding cut-off wavelength is 1.67 μ m.This material has very high parametric stability to ionising radiation, to concentration 5 * 10
19Cm
-3Following input impurity has electric passivity.Adopt the near infrared photodetector of this material development highly sensitive, have stronger capability of resistance to radiation, can be in operate as normal under the harsh environmental conditions, be that the high-capacity optical fiber transmission of 1.55 μ m has vast market prospect with communication field in operation wavelength.In recent years, at the early-stage to its research in the world.
In the data of literatures of report before this, all adopted single Schottky p-n junction structure by the photodetector of the making of tellurium indium mercury material, because its junction capacitance is bigger, response speed, the bandwidth of device have all been brought adverse influence.
Summary of the invention
Task of the present invention provides the Te-In-Hg photoelectronic detector that a kind of response speed is faster, bandwidth is wideer, is applicable to that more various high-capacity optical fiber transmission systems and other work in the photodetection field of 0.8～1.7 mu m waveband.
For realizing above-mentioned task; technical scheme of the present invention is to adopt a kind of Te-In-Hg photoelectronic detector; comprise tellurium indium mercury wafer; in the growth of the front of tellurium indium mercury wafer the passivation protection layer is arranged; on the passivation protection layer, be provided with the cutting of a pair of shape correspondence; cutting penetration passivation protection layer, the superficial growth of tellurium indium mercury crystal has tellurium indium mercury native oxide layer and transparent metal electrode in two cuttings.
Described two cuttings are a pair of pectination cutting, the comb of two pectination cuttings refers to that the space constitutes interdigital structure, the corresponding pectination transparent metal electrode that becomes of transparent metal electrode in the two pectination cuttings, the comb of two pectination transparency electrodes refers to that the space constitutes the pectination transparent metal electrode of a pair of interdigital structure.
Described tellurium indium mercury material is Hg
3-3xIn2
xTe
3Crystalline material, described transparent metal electrode are ITO transparent metal oxide electrode.
The comb finger widths of described pectination transparent metal electrode is 1-20 μ m, and comb refers to that spacing is 1-20 μ m, and comb refers to that length is 10-5000 μ m.
Described ITO transparent metal oxide electrode adopts thermal evaporation or magnetically controlled sputter method to form, and its thickness is between 1000-2000 μ m.
For achieving the above object; the another kind of Te-In-Hg photoelectronic detector of employing of the present invention; comprise tellurium indium mercury wafer; in the growth of the front of tellurium indium mercury wafer the passivation protection layer is arranged; on the passivation protection layer, be provided with the cutting of a pair of shape correspondence, cutting penetration passivation protection layer, the superficial growth of tellurium indium mercury crystal has one deck anodic oxide coating in two cuttings; also growing on the surface of cutting inner anode oxide layer has the transparent metal electrode layer, forms a pair of transparent metal electrode.
Described two cuttings are a pair of pectination cutting, the comb of two pectination cuttings refers to that the space constitutes interdigital structure, the transparent metal electrode on anodic oxide coating in two cuttings and surface thereof also correspondence becomes the comb finger of a pair of lamination, thereby forms the pectination transparent metal electrode of two interdigital structures.
Described tellurium indium mercury material is Hg
3-3xIn
2xTe
3Crystalline material, described anodic oxide coating are tellurium indium mercury native oxide layer, and described transparent metal electrode is an ITO transparent metal oxide electrode.
The comb finger widths of described pectination transparent metal electrode is 1-20 μ m, and comb refers to that spacing is 1-20 μ m, and comb refers to that length is 10-5000 μ m.
Described ITO transparent metal oxide electrode adopts thermal evaporation or magnetically controlled sputter method to form, and its thickness is between 1000-5000 μ m.
As seen the present invention can reduce the junction area of schottky junction, thereby reduce the junction capacitance of detector by adopting the two Schottky junction structures of MSM (metal-semiconductor-metal), improves its response speed, increases bandwidth of operation.If on electrode,, make p-n junction of MSM detector be in spent condition by adding appropriate bias voltage, can further reduce the junction capacitance of detector, improve response speed, its response time can reach the ns magnitude.By adopting the two schottky junction structures of MSM, can make detector have certain photoconductive gain, improve detector sensitivity.By adopting the two Schottky junction structures of MSM, the electrode outlet line of detector is drawn from the single surface of wafer, has avoided single schottky junction because the loss of signal that the volume resistance of tellurium indium mercury crystalline material is brought.In addition, detector manufacturing process of the present invention Te-In-Hg photoelectronic detector manufacturing process with the at present common single schottky junction structure of employing generally is identical, under the situation that does not increase manufacture difficulty, can improve the performance of detector greatly.
Description of drawings
Fig. 1 is common single Schottky Te-In-Hg photoelectronic detector chip structure;
Fig. 2 is the longitudinal sectional drawing of Fig. 1:
Fig. 3 is a Te-In-Hg photoelectronic detector chip structure of the present invention;
Fig. 4 is the longitudinal sectional drawing of Fig. 3.
Embodiment
As shown in Figure 1 and Figure 2, in the photodetector of existing single schottky junction, label 1 is the transparent metal electrode, and 2 is the passivation protection layer, and 3 is anodic oxide coating, and 4 is tellurium indium mercury wafer, and 5 are back of the body extraction electrode.
As shown in Figure 3, Figure 4; wherein I is that the comb electrode comb refers to length (referring to long); w comb electrode comb finger widths (finger beam); t is that the comb electrode comb refers to spacing (referring to spacing), and 2 is the passivation protection layer, and 3 is anodic oxide coating; 4 is tellurium indium mercury wafer; 5 are back of the body extraction electrode, and 6 is the contact conductor weld zone, and 7 refer to for the comb of the transparent comb electrode of ITO.
Generally; the present invention has on the tellurium of the passivation protection layer indium mercury wafer growing; utilize photoetching technique and wet corrosion technique; remove the passivation protection layer; form interdigitated Schottky contacts window; utilize anode oxidation method or plasma oxidation method then; the certain thickness tellurium indium mercury native oxide layer of growth in the Schottky contacts window; at last by thermal evaporation or magnetron sputtering technique and photoetching skill decollement; certain thickness ITO transparent metal oxide electrode in contact electrode window evaporation or sputter, thus form the two Schottky contacts electrode structures of the transparent interdigitated of 0.5～3.0 mum wavelength range of radiation with tellurium indium mercury crystalline material.The photosensitive area interdigital electrode of detector and interelectrode isolation transparent area are formed jointly, and photosensitive area size, shape can be determined according to concrete user demand, the square photosensitive area in adopting accompanying drawing 3, also can be designed to circle or other shape.Interdigital electrode width in the photosensitive area and refer to that spacing is by the photosensitive area size, determine jointly that to parameters such as the performance requirement of device and the photoetching in the technology, etching process precision the size of wire bond pad areas is as the criterion with the demand that can satisfy wire bonds.Compare with common single Schottky p-n knot Te-In-Hg photoelectronic detector, the present invention can significantly reduce the junction capacitance of detector, improve device response speed, expand bandwidth of operation and improve sensitivity.
The present invention is achieved in that
1) opens contact window: have on the tellurium of the passivation protection layer 2 indium mercury wafer 4 growing, utilize photoetching technique and wet corrosion technique, remove the passivation protection layer, form pectination schottky junction contact window.
2) growth oxide layer: utilize anode oxidation method or plasma oxidation method, the certain thickness tellurium indium mercury native oxide layer 3 of growth in the schottky junction contact window.
3) contact electrode preparation: utilize thermal evaporation or magnetically controlled sputter method, certain thickness transparent metal electrode 7 (ITO) film in wafer surface evaporation or sputter contacts thereby form schottky junction with tellurium indium mercury.
4) contact electrode moulding: utilize photoetching technique and stripping technology, remove the ITO film formation interdigitated two schottky junction contact electrode structures of electrode with exterior domain.
5) test, encapsulation: form MSM structure Te-In-Hg photoelectronic detector by wafer cutting, test screening, wire bonds, encapsulation.
Specific embodiment is:
Embodiment 1:
1) tellurium indium mercury intrinsic oxide-film+SiO is arranged growing
2On the tellurium indium mercury wafer of passivation protection layer, utilize the corrosion of photoetching technique and buffered hydrofluoric acid, remove oxide-film+SiO
2The passivation protection layer forms finger beam 10 μ m, refers to spacing 10 μ m, refers to the interdigitated schottky junction contact window of long 2500 μ m.
2) utilize PECVD plasma oxidation method, the tellurium indium mercury native oxide layer of growth 15nm in the Schottky contacts window.
3) utilize magnetically controlled sputter method, transparent metal electrode (ITO) film of 150nm in wafer surface evaporation or sputter contacts thereby form schottky junction with tellurium indium mercury.
4) utilize photoetching technique and stripping technology, remove the ITO film formation interdigitated two schottky junction contact electrode structures of electrode with exterior domain,
5) test, encapsulation: form MSM structure Te-In-Hg photoelectronic detector by wafer cutting, test screening, wire bonds, encapsulation.The detector spectral response scope is 0.8～1.7 μ m.
Embodiment 2:
Oxide layer+SiO is arranged growing
2On the tellurium indium mercury wafer of passivation protection layer, utilize the corrosion of photoetching technique and buffered hydrofluoric acid, remove tellurium indium mercury oxidation film+SiO
2The passivation protection layer, after forming finger beam 2 μ m, referring to spacing 10 μ m, refer to the interdigitated schottky junction contact window of long 1000 μ m, all the other processing steps, parameter are identical with embodiment 1.
It should be noted last that: above embodiment is the unrestricted technical scheme of the present invention in order to explanation only, although the present invention is had been described in detail with reference to the foregoing description, those of ordinary skill in the art is to be understood that: still can make amendment or be equal to replacement the present invention, and not breaking away from any modification or partial replacement of the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (8)
1, a kind of Te-In-Hg photoelectronic detector, comprise tellurium indium mercury wafer, in the growth of the front of tellurium indium mercury wafer the passivation protection layer is arranged, it is characterized in that: on the passivation protection layer, be provided with the cutting of a pair of shape correspondence, cutting penetration passivation protection layer, the superficial growth of tellurium indium mercury crystal has one deck tellurium indium mercury native oxide layer in two cuttings, and also grow the transparent metal electrode layer is arranged in the surface of tellurium indium mercury native oxide layer in cutting, forms a pair of transparent metal electrode; Described two cuttings are a pair of pectination cutting, the comb of two pectination cuttings refers to that the space constitutes interdigital structure, the corresponding pectination transparent metal electrode that becomes of transparent metal electrode in the two pectination cuttings, the comb of two pectination transparency electrodes refers to that the space constitutes the pectination transparent metal electrode that a pair of justice refers to structure.
2, detector according to claim 1 is characterized in that: described tellurium indium mercury material is Hg
3-3xIn
2xTe
3Crystalline material, described transparent metal electrode are ITO transparent metal oxide electrode.
3, detector according to claim 1 and 2 is characterized in that: the comb finger widths of described pectination transparent metal electrode is 1-20 μ m, and comb refers to that spacing is 1-20 μ m, and comb refers to that length is 10-5000 μ m.
4, detector according to claim 3 is characterized in that: described ITO transparent metal oxide electrode adopts thermal evaporation or magnetically controlled sputter method to form, and its thickness is between 1000-2000 μ m.
5, a kind of Te-In-Hg photoelectronic detector, comprise tellurium indium mercury wafer, in the growth of the front of tellurium indium mercury wafer the passivation protection layer is arranged, it is characterized in that: on the passivation protection layer, be provided with the cutting of a pair of shape correspondence, cutting penetration passivation protection layer, the superficial growth of tellurium indium mercury crystal has one deck anodic oxide coating in two cuttings, and also growing on the surface of cutting inner anode oxide layer has the transparent metal electrode layer, forms a pair of transparent metal electrode; Described two cuttings are a pair of pectination cutting, the comb of two pectination cuttings refers to that the space constitutes interdigital structure, the transparent metal electrode on anodic oxide coating in two cuttings and surface thereof also correspondence becomes the comb finger of a pair of lamination, thereby forms the pectination transparent metal electrode of two interdigital structures.
6, detector according to claim 5 is characterized in that: described tellurium indium mercury material is Hg
3-3xIn
2xTe
3Crystalline material, described anodic oxide coating are tellurium indium mercury native oxide layer, and described transparent metal electrode is an ITO transparent metal oxide electrode.
7, according to claim 5 or 6 described detectors, it is characterized in that: the comb finger widths of described pectination transparent metal electrode is 1-20 μ m, and comb refers to that spacing is 1-20 μ m, and comb refers to that length is 10-5000 μ m.
8, detector according to claim 7 is characterized in that: described ITO transparent metal oxide electrode adopts thermal evaporation or magnetically controlled sputter method to form, and its thickness is between 1000-5000 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100176663A CN100499181C (en) | 2006-04-19 | 2006-04-19 | Te-In-Hg photoelectronic detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100176663A CN100499181C (en) | 2006-04-19 | 2006-04-19 | Te-In-Hg photoelectronic detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101060142A CN101060142A (en) | 2007-10-24 |
| CN100499181C true CN100499181C (en) | 2009-06-10 |
Family
ID=38866124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100176663A Expired - Fee Related CN100499181C (en) | 2006-04-19 | 2006-04-19 | Te-In-Hg photoelectronic detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100499181C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324445A (en) * | 2011-09-22 | 2012-01-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | MSM (Metal-Semiconductor-Metal) photodetector with improved structure and preparation method thereof |
| CN111668327B (en) * | 2020-06-22 | 2022-04-22 | 三明学院 | Capacitive photoelectric detector |
| JP7288710B1 (en) * | 2022-03-30 | 2023-06-08 | 国立大学法人東北大学 | Photoelectric conversion element and photoelectric conversion device |
-
2006
- 2006-04-19 CN CNB2006100176663A patent/CN100499181C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101060142A (en) | 2007-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8384179B2 (en) | Black silicon based metal-semiconductor-metal photodetector | |
| US7723206B2 (en) | Photodiode | |
| CN108878544B (en) | Silicon-based photoelectric detector and manufacturing method thereof | |
| CN108987525B (en) | MSM photoelectric detector and manufacturing method thereof | |
| CN110752268A (en) | Preparation method of MSM photoelectric detector integrated with period light-limiting structure | |
| CN109273561B (en) | Preparation method of MSM photoelectric detector | |
| CN100499181C (en) | Te-In-Hg photoelectronic detector | |
| CN102947947B (en) | Photo-electric conversion device | |
| JP6207414B2 (en) | Photovoltaic element and manufacturing method thereof | |
| CN110854234A (en) | Graphene photoelectric detector based on interdigital electrode structure | |
| CN105185845A (en) | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof | |
| US8729383B2 (en) | Stacked-layered thin film solar cell and manufacturing method thereof | |
| KR101658534B1 (en) | Solar cell and method for fabricaitng the same | |
| EP2013915A1 (en) | Bonded wafer avalanche photodiode and method for manufacturing same | |
| JPS62209872A (en) | Photoelectric conversion element | |
| CN103296099A (en) | Rear surface passivation point contact photovoltaic battery and production method thereof | |
| CN111106221A (en) | Wafer-level deep ultraviolet LED packaging mode | |
| CN101261158B (en) | Photodetector | |
| TWI463680B (en) | Transparent thin film solar cells | |
| JP2007504659A (en) | Systems and methods having metal-semiconductor-metal (MSM) photodetectors with buried oxide layers | |
| US5990490A (en) | Optical electronic IC capable of photo detection | |
| CN112366233A (en) | GaN-based ultraviolet detector and manufacturing method thereof | |
| KR101486206B1 (en) | Fabrication method of compound semiconductor sollar cell using transparent conductive oxide and compound semiconductor sollar cell thereby | |
| CN114744059B (en) | Solar blind polarization detector based on gallium oxide single crystal and preparation method thereof | |
| KR100972115B1 (en) | Flexible thin film type solar cell and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090610 Termination date: 20130419 |