CN110459548B - Photoelectric detector based on Van der Waals heterojunction and preparation method thereof - Google Patents
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Abstract
The invention discloses a photoelectric detector based on a van der Waals heterojunction and a preparation method thereof. The photoelectric detector comprises an optical fiber, a van der Waals heterojunction structure, a pair of optical fiber side wall metal electrodes and a pair of optical fiber end face metal electrodes, wherein the optical fiber side wall metal electrodes are connected with the optical fiber end face metal electrodes; the Van der Waals heterojunction structure is positioned on the end face of the optical fiber and sequentially comprises a tungsten disulfide film, a molybdenum disulfide film and a graphene film from bottom to top; and the pair of optical fiber end face metal electrodes are respectively connected with the graphene films at two ends of the Van der Waals heterojunction structure. The photoelectric detector prepared by the invention can realize the functions of detecting weak light in visible near-infrared wave bands and detecting strong light in full wave bands, has better stability and anti-interference capability, and has wide application prospect in the fields of optical communication and optical sensing.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to the field of photoelectric detectors. And more particularly, to a novel ultra-high responsivity, high-speed response, ultra-wideband photodetector and a method for fabricating the same.
Background
The photodetector is a device for converting an optical signal into an electrical signal, and when the photodetector is irradiated by light, the electrical conductivity of the photodetector is changed, so that the photodetector is electrically detected. Photoelectric detectors are widely applied in various fields of military affairs and national economy, wherein the photoelectric detector with ultrahigh sensitivity makes outstanding contribution in the research fields of modern optical communication, environmental detection, biomedical research and the like. The photoelectric detector can be divided into two types, one type is a photon type detector, a semiconductor material in the detector directly absorbs photons to generate the change of the conductivity, and the photoelectric detector is a detection device with selective response wavelength, such as a photoelectric tube, a photoconductive detector, a photovoltaic detector and the like; one is a thermal detector, in which a detecting element absorbs the energy of optical radiation to cause the temperature to rise, and a physical parameter to change, and is detected, and this is a detecting device without wavelength selectivity, such as a pyroelectric detector, a thermistor, and the like. Photon type detectors have high detectivity and photoresponse, with particular advantage for incident light of low light intensity, but their wavelength range of detection is generally narrow due to the limitation of the bandgap of the semiconductor material. Thermal detectors have a wide spectral response range, but are low in detectivity and responsivity and are therefore suitable for the detection of incident light of high light intensity. However, due to the difference of physical mechanisms between the photon-type detector and the thermal detector, it is difficult for the conventional detector to combine high responsivity with a wide response wavelength range.
Graphene two-dimensional materials have gained worldwide attention since their discovery as a zero band gap semiconductor material. Intrinsic monolayer graphene has a height of up to 200000cm2The electron mobility of the semiconductor material is much higher than that of the traditional semiconductor material, and the thermal conductivity is as high as 5300W/mK. Graphene also has high mechanical strength, good bending properties, and is easily combined with other materials, enabling graphene to be well integrated with many structures. In the aspect of a photoelectric detector, graphene can be used for preparing a high-speed broadband photoelectric detector, the response speed of the detector is high due to good thermal conductivity and electron mobility of the graphene, the wavelength range of the response of the detector is wide due to the property of zero band gap of the graphene, but the photoelectric gain of the intrinsic graphene is very small due to the fact that the light absorption rate of the intrinsic graphene is very small (the single-layer graphene has only 2.3% of the absorption rate of vertical incident light in visible and near infrared bands), the electron hole recombination rate is high, the service life is short, and therefore the light responsivity of a device is greatly limited; in addition, the zero band gap of graphene prevents it from being in an on or off state, thus limiting its applications. Graphene-like two-dimensional materials such as Transition Metal Disulfides (TMDCs) and Black Phosphorus (BP) having a band gap with a certain width have been discovered from the beginning of graphene, and they have been widely used in the fields of photodiodes, phototransistors and photodetectors due to their excellent photoelectric properties. In the aspect of photoelectric detectors, the photoelectric detectors made of the graphene-like two-dimensional materials have good switching performance. On one hand, however, the responsivity is often difficult to be extremely high and the response speed is slow due to the influence of electron mobility and defects; on the other hand, the detection wavelength range of the two-dimensional semiconductor material is limited by the band gap of the two-dimensional semiconductor material, and the detection wavelength range is often smaller and is limited to the visible light band.
Graphene and a graphene-like two-dimensional material are combined to form a van der Waals heterojunction, so that the carrier mobility of the graphene-like two-dimensional material can be enhanced, the light responsivity of the detector is greatly improved, the response speed is still slow, and the detection wavelength range is still small. Various different graphene-like two-dimensional materials are combined to form van der Waals heterojunction, and due to the fact that the graphene-like two-dimensional materials have different work functions, a built-in electric field can be formed to accelerate the speed of separation and recombination of electrons and holes, and therefore the response speed and the light responsivity are improved; due to the presence of electronic transitions between layers of different two-dimensional materials between them, the energy required for the incident photons can be reduced, thereby extending the detection wavelength range, but the optical responsivity remains relatively small.
Disclosure of Invention
The invention aims to combine graphene with a plurality of different graphene-like two-dimensional materials to form a van der Waals heterojunction, and provides a van der Waals heterojunction-based high-responsivity, high-speed response and broadband photoelectric detector. Another object of the present invention is to provide a method for manufacturing the photodetector.
The photoelectric detector adopts the technical scheme that:
a photoelectric detector based on Van der Waals heterojunction comprises an optical fiber, a Van der Waals heterojunction structure, a pair of optical fiber side wall metal electrodes and a pair of optical fiber end face metal electrodes, wherein the optical fiber side wall metal electrodes are connected with the optical fiber end face metal electrodes; the Van der Waals heterojunction structure is positioned on the end face of the optical fiber and sequentially comprises a tungsten disulfide film, a molybdenum disulfide film and a graphene film from bottom to top; the pair of optical fiber end face metal electrodes are respectively connected with the graphene films at two ends of the Van der Waals heterojunction structure.
Further, the pair of optical fiber side wall metal electrodes and the pair of optical fiber end face metal electrodes are symmetrically distributed relative to the axis of the optical fiber.
Preferably, the material of the metal electrode is gold, and the thickness is 40 nm.
Preferably, the distance between the pair of fiber end face metal electrodes is 5-15 μm.
Preferably, the graphene film is 3-10 layers, the molybdenum disulfide film is 3-10 layers, and the tungsten disulfide film is 3-10 layers.
The method for preparing the photoelectric detector comprises the following specific steps:
(1) growing a graphene film on the surface of the copper foil by using a chemical vapor deposition method, and growing a molybdenum disulfide film and a tungsten disulfide film on the surface of the sapphire or mica; spin-coating the three films with PMMA solution, spin-coating an empty sapphire substrate to form a PMMA film, corroding a copper foil with ferric trichloride aqueous solution, and corroding sapphire or mica with sodium hydroxide aqueous solution; then transferring the obtained graphene film, molybdenum disulfide film, tungsten disulfide film and PMMA film into deionized water for cleaning for several times, taking out all the films by using a glass sheet or a silicon wafer, and heating and drying;
(2) removing the optical fiber coating layer, ultrasonically cleaning the optical fiber coating layer for several times by using an ethanol solvent, and then cutting the end face of the optical fiber to be flat;
(3) placing the drawn optical fiber probe or the sharp metal probe on a three-dimensional translation table, cutting the film prepared in the step (1) into strip-shaped small pieces under a microscope, lifting the small pieces by using the probe, sequentially placing the thin pieces on the end face of the optical fiber prepared in the step (2) according to the sequence of the tungsten disulfide film, the molybdenum disulfide film and the graphene film to form a van der Waals heterojunction structure, and then heating to firmly combine the structure with the optical fiber; finally, the PMMA film is picked up by a probe, covered on the van der Waals heterojunction structure and vertical to the film direction of the structure;
(4) and (3) uniformly depositing a layer of metal film on the end face and the side wall of the optical fiber obtained in the step (3) by using a physical vapor deposition method, removing the covered PMMA film by using a probe, and grinding the side wall of the optical fiber and part of the metal film on the end face of the optical fiber to obtain a pair of metal electrodes on the side wall of the optical fiber and a pair of metal electrodes on the end face of the optical fiber, wherein the metal electrodes on the side wall of the optical fiber are connected with the metal electrodes on the end face.
The principle of the high responsivity, high speed response and broadband photoelectric detector based on the van der Waals heterojunction comprises the following steps: under the condition of weak light, the device works in a photon type detector mode, and the photoconductive effect is dominantThe application is as follows. Irradiation of a beam of light onto van der Waals heterojunctions at short wavelengths results in molybdenum disulfide (MoS)2) Tungsten disulfide (WS)2) Separation of pairs of medium electrons and holes, wherein the electrons and holes respectively move towards the graphene layer and the tungsten disulfide (WS) under the action of a built-in electric field2) Moving in the layer. Since graphene is P-type, most carriers are holes, and the injection of electrons can reduce the hole concentration, thereby reducing the conductivity and generating a negative photocurrent. At the same time, in tungsten disulfide (WS)2) The holes in the layer will form a gate-like effect to electrostatically dope the graphene, further reducing its conductivity. In the case of the long wavelength, it is different from the case of the short wavelength in that molybdenum disulfide (MoS) is irradiated onto a van der Waals heterojunction when a light is irradiated2) Tungsten disulfide (WS)2) The electron and hole pairs in the layer cannot be separated under the influence of the band gap, but the electron is separated from tungsten disulfide (WS)2) Conduction band transition of a layer to molybdenum disulfide (MoS)2) Separation of electrons and holes in the valence band of the layer, injection of electrons in P-type graphene, and tungsten disulfide (WS)2) The gate voltage influence of holes in the layer will cause its conductivity to decrease and the photocurrent to be negative. Under the condition of strong light, the device works in a mixed mode of a thermal detector and a photon detector, and the photoconductive effect and the optical radiation thermal effect act together and are dominated by the optical radiation thermal effect. With the increase of the optical power, the response of the graphene to the heat generated by the light irradiation is gradually reflected, so that the conductivity becomes larger, a positive photocurrent is generated, and the positive photocurrent and a negative photocurrent generated by the photoconductive effect are mutually offset, and finally the magnitude of the photocurrent is positive. Under the conditions of strong light and weak light, the sensor has excellent log-log linear correlation on the light responsivity and the incident light power, so that the sensor can be used for sensing and detecting the light power. Meanwhile, the device has different responses to light with different wavelengths, so that the device can be used for sensing and detecting the light wavelength.
The invention discloses a van der Waals heterojunction formed by graphene and multiple graphene-like two-dimensional materials based on an optical fiber end face, and realizes a high-performance photoelectric detector with ultrahigh optical responsivity, high response speed and ultra-wide band detection wavelength range, compared with the prior art, the photoelectric detector has the following advantages: (1) the visible near-infrared band weak light detection function can be realized, and the detection precision is extremely high. (2) The photoelectric detector can realize the full-waveband strong light detection function, has better stability and anti-interference capability, and has wide application prospect in the fields of optical communication and optical sensing. (3) The photoelectric detector has the advantages of simple preparation method, low cost, high yield and applicability to various two-dimensional materials. (4) The substrate of the photoelectric detector is not limited to the end face of the optical fiber, and has good compatibility for various plane systems, including silicon base, glass, polymer, ceramic and the like.
Drawings
FIG. 1 is a schematic diagram of the structure and test circuit of the high-responsivity, high-speed response, broadband photodetector based on Van der Waals heterojunction. 1-end face electrode, 2-side wall electrode, 3-van der waals heterojunction.
Figure 2 is a flow chart of the fabrication of a highly responsive, high-speed responsive, broadband photodetector based on van der waals heterojunctions in accordance with the present invention.
FIG. 3 is a graph of typical test performance of a highly responsive, high-speed-responsive, broadband photodetector of the present invention based on Van der Waals heterojunctions, (a) is a response curve of the device current and photocurrent under different applied biases; (b) the relationship curve of the photoelectric responsivity of the device and the incident light power is shown; (c) the relationship curve of the photoelectric responsivity of the device and the wavelength of incident light is shown.
Detailed Description
The following further illustrates the practice of the present invention.
Fig. 1 is a schematic structural diagram of a high-responsivity, high-speed response, broadband photodetector based on van der waals heterojunction according to the present invention, which includes an optical fiber end face electrode 1, an optical fiber side face electrode 2, and van der waals heterojunction 3 covering the optical fiber core and under the end face electrode. The optical fiber end face electrode 1 and the optical fiber side face electrode 2 are connected and symmetrically distributed relative to the axis of the optical fiber, and the distance between the electrodes is matched with the diameter of the fiber core of the optical fiber. During testing, an external bias voltage is applied to the Van der Waals heterojunction 3 through the optical fiber side electrode 2 and the optical fiber end face electrode 1, and when light is irradiated to the surface of the Van der Waals heterojunction 3 through an optical fiber core, generated photoelectric current can be led out and analyzed by the optical fiber end face electrode 1 and the optical fiber side face electrode 2.
To realize the device of fig. 1, the detailed flow of the preparation of this example is shown in fig. 2:
(1) preparing a film: growing a graphene film on the surface of the copper foil by using a chemical vapor deposition method, and growing molybdenum disulfide (MoS) on the surface of the sapphire or mica2) Tungsten disulfide (WS)2) A film. Spin coating the film with PMMA solution, spin coating the empty sapphire substrate, corroding the copper foil with ferric trichloride aqueous solution, and corroding sapphire or mica with sodium hydroxide aqueous solution. Then obtaining the graphene and molybdenum disulfide (MoS)2) Tungsten disulfide (WS)2) And transferring PMMA film into deionized water for washing several times, and using glass Sheet (SiO)2) Or taking out the silicon wafer (Si) and then heating and drying the silicon wafer (Si).
(2) Removing the optical fiber coating layer, ultrasonically cleaning the optical fiber coating layer for several times by using an ethanol solvent, and cutting the end face of the optical fiber by using an optical fiber cutter;
(3) placing the drawn fiber probe or sharp metal probe on a three-dimensional translation stage, and placing the fiber probe or sharp metal probe on a glass Sheet (SiO) under a microscope2) Or cutting the film on the silicon wafer (Si) into strip-shaped pieces and picking up the pieces with an optical fiber probe according to tungsten disulfide (WS)2) Molybdenum disulfide (MoS)2) And (3) sequentially placing graphene at the center of the end face of the optical fiber prepared in the step (2) to form a van der waals heterojunction 3, and then heating to firmly bond the graphene and the optical fiber. Finally, the PMMA film is picked up by the same method, placed in the center of the end face of the optical fiber and vertical to the previous graphene Van der Waals heterojunction film.
(4) Uniformly depositing a layer of metal film on the end face and the side wall of the optical fiber by using a physical vapor deposition method, and removing the covered PMMA film by using an optical fiber probe; then, using an optical fiber polishing sheet with fine sand grains to grind off part of the metal film on the side wall of the optical fiber to prepare a pair of metal electrodes; and scraping part of the metal film on the end face of the optical fiber by using a tungsten metal probe to form a pair of metal electrodes, namely obtaining the photoelectric detector of the embodiment, wherein the metal electrodes on the side wall of the optical fiber are connected with the metal electrodes on the end face.
The photosensitive element of the photoelectric detector is not limited to the combination of graphene, molybdenum disulfide and tungsten disulfide, and semiconductor materials with staggered energy bands can be used as the photosensitive element.
Fig. 3 is a test result of an embodiment of the present invention, and the test system of the photodetector based on the van der waals heterojunction according to the present invention includes a light source, a single-mode optical fiber, a coupler, a commercial photodetector, a digital source meter, an electrode holder, a computer, and the photodetector prepared in this embodiment. Light output by the light source is connected into the coupler through a single-mode optical fiber, and two optical fibers connected out of the coupler are respectively connected into the photoelectric detector and the commercial photoelectric detector prepared in the embodiment. The digital source meter provides voltage to the optical fiber end face electrode through the electrode clamp, detects the current magnitude of the optical fiber end face electrode in real time, and displays and records the test result in real time through computer software. Under different applied bias voltages, recording the response curves of the current and the photocurrent of the device to obtain a graph (a) in fig. 3, and the device has good ohmic contact as shown by a linear I-V curve; changing the power of incident light, recording the magnitude of the photocurrent of the device and calculating the light responsivity to obtain a graph (b) in FIG. 3, wherein the device has extremely high light responsivity, and the light responsivity and the power have a log-log linear relationship; changing the wavelength of the incident light, recording the magnitude of the photocurrent of the device and calculating the photoresponse thereof to obtain fig. 3(c), it can be seen that the device has a wide operating bandwidth.
Under the incidence of 400nm wavelength with incident light power of 5fW, a bias voltage of-3V is applied to the device, and the light responsivity of the device can reach 107The magnitude of A/W is high in response speed and can reach the magnitude of ms; under the incidence of 1550nm wavelength with incident light power of 20nW, a bias voltage of-3V is applied to the device, the light responsivity can reach the magnitude of 10A/W, and the response speed can reach the magnitude of ms.
From the test results, the graphene and the two layers of graphene-like two-dimensional materials have higher light responsivity, faster response time and a wider corresponding range of wavelength compared with other conventional van der waals heterojunction.
Claims (8)
1. A photoelectric detector based on Van der Waals heterojunction is characterized by comprising an optical fiber, a Van der Waals heterojunction structure, a pair of optical fiber side wall metal electrodes and a pair of optical fiber end face metal electrodes, wherein the optical fiber side wall metal electrodes are connected with the optical fiber end face metal electrodes; the Van der Waals heterojunction structure is positioned on the end face of the optical fiber and sequentially comprises a tungsten disulfide film, a molybdenum disulfide film and a graphene film from bottom to top; the pair of optical fiber end face metal electrodes are respectively connected with the graphene films at two ends of the Van der Waals heterojunction structure.
2. The van der waals heterojunction-based photodetector of claim 1, wherein the pair of fiber-side-wall metal electrodes and the pair of fiber-end-face metal electrodes are symmetrically distributed with respect to an axis of the optical fiber.
3. The van der waals heterojunction-based photodetector of claim 1, wherein the metal electrode is made of gold and has a thickness of 40 nm.
4. The van der waals heterojunction-based photodetector of claim 1, wherein a spacing between the pair of fiber-optic end-face metal electrodes is 5 to 15 μm.
5. The van der waals heterojunction-based photodetector of claim 1, wherein the graphene thin film is 3 to 10 layers, the molybdenum disulfide thin film is 3 to 10 layers, and the tungsten disulfide thin film is 3 to 10 layers.
6. The method of claim 1, wherein the method comprises the following steps:
(1) growing a graphene film on the surface of the copper foil by using a chemical vapor deposition method, and growing a molybdenum disulfide film and a tungsten disulfide film on the surface of the sapphire or mica; spin-coating the three films with PMMA solution, spin-coating an empty sapphire substrate to form a PMMA film, corroding a copper foil with ferric trichloride aqueous solution, and corroding sapphire or mica with sodium hydroxide aqueous solution; then transferring the obtained graphene film, molybdenum disulfide film, tungsten disulfide film and PMMA film into deionized water for cleaning for several times, taking out all the films by using a glass sheet or a silicon wafer, and heating and drying;
(2) removing the optical fiber coating layer, ultrasonically cleaning the optical fiber coating layer for several times by using an ethanol solvent, and then cutting the end face of the optical fiber to be flat;
(3) placing the drawn optical fiber probe or the sharp metal probe on a three-dimensional translation table, cutting the film prepared in the step (1) into strip-shaped small pieces under a microscope, lifting the small pieces by using the probe, sequentially placing the thin pieces on the end face of the optical fiber prepared in the step (2) according to the sequence of the tungsten disulfide film, the molybdenum disulfide film and the graphene film to form a van der Waals heterojunction structure, and then heating to firmly combine the structure with the optical fiber; finally, the PMMA film is picked up by a probe, covered on the van der Waals heterojunction structure and vertical to the film direction of the structure;
(4) and (3) uniformly depositing a layer of metal film on the end face and the side wall of the optical fiber obtained in the step (3) by using a physical vapor deposition method, removing the covered PMMA film by using a probe, and grinding the side wall of the optical fiber and part of the metal film on the end face of the optical fiber to obtain a pair of metal electrodes on the side wall of the optical fiber and a pair of metal electrodes on the end face of the optical fiber, wherein the metal electrodes on the side wall of the optical fiber are connected with the metal electrodes on the end face.
7. The preparation method according to claim 6, wherein in the step (1), the number of layers of the graphene thin film is 3 to 10, the number of layers of the molybdenum disulfide thin film is 3 to 10, and the number of layers of the tungsten disulfide thin film is 3 to 10.
8. The method according to claim 6, wherein in the step (4), the metal thin film is made of gold and has a thickness of 40 nm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105551909A (en) * | 2015-12-23 | 2016-05-04 | 深圳先进技术研究院 | Field emission cathode and preparation method and application thereof |
| CN105789367A (en) * | 2016-04-15 | 2016-07-20 | 周口师范学院 | Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof |
| CN107316915A (en) * | 2017-07-04 | 2017-11-03 | 中山大学 | Photodetector of integrated graphene molybdenum disulfide of visible light wave range and preparation method thereof |
| CN107937949A (en) * | 2016-10-13 | 2018-04-20 | 香港中文大学 | The method for preparing two-dimensional layer vertical heterojunction |
-
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- 2018-05-08 CN CN201810431706.1A patent/CN110459548B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105551909A (en) * | 2015-12-23 | 2016-05-04 | 深圳先进技术研究院 | Field emission cathode and preparation method and application thereof |
| CN105789367A (en) * | 2016-04-15 | 2016-07-20 | 周口师范学院 | Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof |
| CN107937949A (en) * | 2016-10-13 | 2018-04-20 | 香港中文大学 | The method for preparing two-dimensional layer vertical heterojunction |
| CN107316915A (en) * | 2017-07-04 | 2017-11-03 | 中山大学 | Photodetector of integrated graphene molybdenum disulfide of visible light wave range and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Ternary Composite Nanosheets with MoS2/WS2/Graphene Heterostructures as High-Performance Cathode Materials for Supercapacitors;Lin, Tsung-Wu; Sadhasivam, Thangarasu; Wang, Ai-Yin;;《ELECTROCHEMISTRY》;20180430;全文 * |
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