CN111637981B - Photon number resolution detector and system thereof - Google Patents
Photon number resolution detector and system thereof Download PDFInfo
- Publication number
- CN111637981B CN111637981B CN202010596029.6A CN202010596029A CN111637981B CN 111637981 B CN111637981 B CN 111637981B CN 202010596029 A CN202010596029 A CN 202010596029A CN 111637981 B CN111637981 B CN 111637981B
- Authority
- CN
- China
- Prior art keywords
- current
- photon
- bank
- detector
- photon number
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002070 nanowire Substances 0.000 claims abstract description 70
- 238000001514 detection method Methods 0.000 claims abstract description 36
- 238000005259 measurement Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000002238 attenuated effect Effects 0.000 claims description 3
- 230000010287 polarization Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 15
- 238000004088 simulation Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100163433 Drosophila melanogaster armi gene Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J11/00—Measuring the characteristics of individual optical pulses or of optical pulse trains
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a photon number resolution detector and a system thereof, wherein the detector comprises: the superconducting nanowire multi-photon detector is formed by connecting a plurality of photosensitive nanowires and 1 current bank in parallel, after the plurality of photosensitive nanowires detect photons, overflowing current is stored in the current bank, and the magnitude of superconducting current in the current bank and the number of detected photons form a corresponding relation; determining the ratio of the line width between the photosensitive nanowire and the current bank and the ratio of the kinetic energy inductance between the photosensitive nanowire and the current bank; a y-type read-out arm is integrated on the current bank structure to realize non-invasive measurement of current I in the current bankR. The system comprises: a detector, and corresponding circuit components. The invention retains the main advantages of high detection efficiency of SNSPD, and realizes high-fidelity multi-photon detection by utilizing the intrinsic photon number resolution capability of SNSPD; the invention uses a single bias circuit and a read-out circuit, aims to simplify the complexity of a multi-photon detection system and endows the device with the expansibility of distinguishing the photon number n.
Description
Technical Field
The invention relates to the field of photoelectronic devices, in particular to a photon number resolution detector and a system thereof.
Background
With the development of quantum optics and classical optics, multi-photon cooperative detection needs to be realized in a near infrared band, and a detector capable of realizing photon number resolution is needed. The photon number resolution detector means that when 0 to n photons are incident, the detector can output corresponding n +1 states in real time to resolve the incident photon number. At present, photon number resolution detection is widely applied to the aspects of quantum communication, laser radar and the like.
In order to realize high-fidelity multi-photon detection, the conventional method for realizing photon number resolution adopts M (M is greater than or equal to n) independent high-performance single photon detectors, for example, a Superconducting nanowire single-photon detector (SNSPD) array is used to cooperatively detect a plurality of photons, thereby realizing resolution of the number of incident photons. Although individual SNSPDs have good performance, each requires operation in the liquid helium temperature region and separate biasing and readout circuitry.
Therefore, with the increase of the number n of detected photons, the complexity of the whole multi-photon detection system also increases, so that the expansion of the photon resolution number n is limited, and on the other hand, when the number of detectors is fixed, the detection fidelity of the number of photons is sharply reduced with the increase of the number of incident photons. Another multiphoton detection scheme is to use detectors with intrinsic photon number resolving power, such as: SNSPD, superconducting transition edge detector (TES), etc. The fidelity of this approach is 1, but there is a limit to the maximum number of resolvable photons, typically less than 10 photons, for example: the maximum number of resolvable photons of SNSPD is only 4.
Disclosure of Invention
The invention provides a photon number resolution detector and a system thereof, the invention improves the traditional single photon detector into the photon number resolution detector, retains the main advantages of high detection efficiency of SNSPD and the like, and simultaneously realizes high-fidelity multi-photon detection by utilizing the intrinsic photon number resolution capability of the SNSPD; the present invention uses a single bias circuit and readout circuit to simplify the complexity of the multi-photon detection system and to give the device the scalability of the distinguishable photon number n, as described in detail below:
a photon number resolving detector, comprising: a superconducting nanowire multi-photon detector is provided,
the superconducting nanowire multi-photon detector is formed by connecting a plurality of photosensitive nanowires and 1 current bank in parallel, overflowing current is stored in the current bank after the photosensitive nanowires detect photons, and the magnitude of superconducting current in the current bank and the number of detected photons form a corresponding relation;
determining the ratio of the line width between the photosensitive nanowire and the current bank and the ratio of the kinetic energy inductance between the photosensitive nanowire and the current bank; a y-type read-out arm is integrated on the current bank structure to realize non-invasive measurement of current I in the current bankR。
Wherein, said integrating a y-type reading arm on the current bank structure realizes the non-invasive measurement of the current I in the current bankRThe method specifically comprises the following steps:
current I in the current bank to be monitoredRA y-type read arm into which a read current flows; an included angle exists between the reading arm and the current bank, and the superconducting current in the current bank is deduced by measuring the critical current of the reading arm, so that the reading of the number of the detection photons is realized.
A photon number-resolving detection system, the system comprising: a photon number-resolving detector for detecting the number of photons,
the photon number resolution detector is arranged in the refrigerator, the light source adopts a pulse laser, and the light source is coupled to the photon number resolution detector after passing through the polarization controller and the optical attenuator;
the random waveform generator generates two paths of current pulse signals, the current pulse signals are attenuated by the radio frequency attenuator and then are respectively used as a bias current signal and a read current signal of the photon number resolution detector, the read current signal is amplified by the amplifier and then is led into the oscilloscope, the critical current of the read current signal is observed, and finally the current I in the current library is realizedRIs read out.
Further, the system works in 3 phases:
in the pre-bias stage, a negative current pulse is input into an arbitrary waveform generator at the y-type reading arm end, so that most of current in a current bank is transferred into the photosensitive nanowire;
in the photon detection stage, after light pulse incidence, a triangular wave signal is input by a y-type reading arm end by adopting an arbitrary waveform generator, and the triangular wave signal is used for scanning and measuring the current value in a current library to obtain photon number distribution information in each pulse;
and in the device resetting stage, after each triangular wave signal, a large bias current pulse signal is input to enable the whole device to be in a resistive state, and then the input of the bias current is stopped to enable the device to be recovered to a superconducting state.
Wherein the system further comprises:
the distribution of the actual photon number in each pulse under different incident photon numbers is measured by adjusting the attenuation value of the optical attenuator, and compared with the Poisson distribution predicted by theory, the reliability of photon resolution detection is verified.
The technical scheme provided by the invention has the beneficial effects that:
1. the invention improves on the basis of SNSPD with high detection efficiency, and realizes real-time photon number resolution detection by using single-path reading of a single detector;
2. the invention uses a single bias circuit and a read-out circuit, aims to simplify the complexity of a multi-photon detection system and endows the device with the expansibility of distinguishing the photon number n;
3. the photon number resolution detector provided by the invention is expected to be applied to scenes with large photon number resolution requirements.
Drawings
Fig. 1 is a schematic diagram of a device structure, a schematic diagram of an electrical structure and a simulation diagram of photon number response of the photon number resolution detector when M is 2;
wherein, (a) is a superconducting nanowire multi-photon detector structure under the condition that M is 2: n is a radical of1，N 22 photosensitive nanowire structures; r is a current bank structure for storing current. The yTron structure reads current I throughreadSense current in the current bank
IbiasBiasing current for the device as a whole; (b) an equivalent circuit model of the superconducting nanowire multi-photon detector structure under the condition that M is 2; (c) the method is used for simulating the evolution diagram of the superconducting current in the current library with time under different incident photons through a thermoelectric model.
Fig. 2 is a schematic diagram of a device structure of the photon number resolving detector when M is 20, a simulation diagram of a steady-state current of a current bank, and a simulation diagram of a minimum difference value of the steady-state current;
wherein, (a) is a superconducting nanowire multi-photon detector structure under the condition that M is 20: n is a radical of1To N20The structure is 20 photosensitive nano wires; r is a current bank structure for storing current. The yTron structure reads current I throughreadCritical value of
Sensing the current I in the current bankR，IbiasBiasing current for the device as a whole; (b) the steady state value distribution diagram of the current in the current bank under the condition of different incident photon numbers n; (c) is the minimum difference between the steady state currents in the current bank for different incident photon numbers n.
FIG. 3 is a diagram of a yTron structure diagram and simulation results of yTron current sensing;
wherein, (a) is a yTron structure schematic diagram, and a certain included angle exists between the current library and the reading arm; (b) for currents I in the current bankRCritical current of read arm
The relationship of (A) is simulated, and the simulation result shows the critical current of the read-out arm
With the current I in the current bankRThere is a linear relationship between the current levels in the current bank, which can be sensed based on the critical current of the sensing arm.
FIG. 4 is a diagram of a photon number-resolved detection system and expected experimental results.
Wherein, (a) is a schematic diagram of a photon number resolution detection system; (b) for the expected experimental results: the first row is the time-sequential distribution of the incident light pulses, and the second and third rows represent the readout currents I generated by an Arbitrary Waveform Generator (AWG), respectivelyreadWith a global bias current IbiasThe last row represents the superconducting current I in the current bankRAnd the number of incident photons.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
Example 1
The photon number resolution detector in the embodiment of the invention adopts the technical scheme thatThe following aspects: the technology is to realize the design of the superconducting nanowire multi-photon detector and verify the current I in the current bank structure of the superconducting nanowire multi-photon detectorRThe number of the detection photons is in one-to-one correspondence; the second technique is to design a superconducting current reading structure yTron to realize the current I in the current bankRReading out of (1); and the third technology is the design of the whole system of the photon number resolution detector.
The first technology is as follows: design of superconducting nanowire multi-photon detector
The superconducting nanowire multi-photon detector is formed by connecting M photosensitive nanowires and 1 current bank in parallel. The width of the photosensitive nanowire is typically between tens to a hundred nanometers and functions to detect photons. A certain bias current is applied to the photosensitive nanowire, the photosensitive nanowire can be changed from a superconducting state to a resistive state after detecting photons, and most of the bias current can overflow from the photosensitive nanowire. The current bank is a nanowire with the width larger than that of the photosensitive nanowire, is insensitive to photons, and is used for storing overflow current after the photosensitive nanowire detects the photons. After the photosensitive nanowires detect photons, overflowing current can be stored in the current bank, so that the magnitude of superconducting current in the current bank and the number of detected photons form a corresponding relation.
Design of superconducting nanowire multi-photon detector: firstly, the ratio of the line width between the photosensitive nanowire and the current bank and the ratio of the kinetic energy inductance between the photosensitive nanowire and the current bank are determined, so that the whole device can be ensured to be at a higher bias level, and meanwhile, no locking occurs in the working process. By reducing the integral kinetic energy inductance of the device, the intrinsic photon number resolution capability of the SNSPD is enhanced and utilized, thereby realizing high-fidelity multi-photon detection. And then, simulating the working principle of the set device structure by using a thermoelectric simulation platform of the superconducting nanowire.
In the embodiment of the present invention, the structure of M ═ 2 and M ═ 20 is taken as an example, and the relation between the superconducting current and the number of incident photons in the simulation current library is simulated. The simulation result verifies the corresponding relation between the current in the current library and the number of incident photons.
The second technology is as follows: integrated yTron structure
yTThe ron structure is a structure for realizing superconducting current reading by utilizing a superconducting current crowding effect, and a y-type reading arm is integrated on a current library structure, so that the current I in a current library can be measured in a non-invasive mannerR。
The specific working mode is as follows: current I in the current bank to be monitoredRFlows into the yTron structure, and senses the current IreadFrom the read arm; an included angle exists between the reading arm and the current bank, so that at the joint of the current bank and the reading arm, the superconducting current in the current bank can weaken the current crowding effect of the reading arm, and when the superconducting current in the current bank is increased, the maximum value of the current of the reading arm (namely, the critical current of the reading arm)
) Will also increase; finally by measuring the read-out arm
The superconducting current in the current bank can be deduced, and the number of detected photons of the superconducting nanowire multi-photon detector can be read.
The third technology comprises the following steps: photon number resolution detector system
The system is designed as follows: after photon number resolution detectors designed by the first and second technologies are placed in a refrigerator, coherent light pulse signals with certain repetition frequency are introduced. After attenuating the number of photons contained in a single light pulse to a few-photon order (where a few-photon order is a concept opposite to a multi-photon order, well known to those skilled in the art), the light pulse is coupled into a photon number-resolving detector through an optical fiber. An arbitrary waveform generator in the experimental setup generates a bias current signal for biasing and resetting the device and a sense current signal for sensing the superconducting current in the device current bank. The output signal of the device is amplified by an amplifier (radio frequency) and then input into an oscilloscope, so that the critical current of a reading arm is obtained. The photon number of the incident light pulse under different light attenuations is detected by the detector, and compared with a theoretical result, the verification of the photon number distinguishing detector is realized.
The device material of the photon number resolution detector can use polycrystalline material, and comprises the following components: niobium nitride, titanium niobium nitride, and amorphous materials, including: tungsten silicide, molybdenum silicide. The thickness of the typical photosensitive nanowire is 4-9 nm, and the width is 30-150 nm, and the thickness of the material and the nanowire is not limited in the embodiment of the invention and can be set according to the requirement in practical application.
Example 2
The scheme of example 1 is further described below in conjunction with fig. 1-4, and is described in detail below:
design of one-and superconductive nanowire multi-photon detector
The structure of the superconducting nanowire multi-photon detector is shown in fig. 1(a), and after M (in the figure, M is 2) photosensitive nanowires are connected in parallel with a single current bank structure, a yTron structure is integrated on the current bank structure. The width of the current bank needs to be set according to the photosensitive nanowire width and the number M. The inductance in the current bank is set according to the photosensitive nanowire inductance and the number M. The current evolution process in the current library under different detection photon numbers can be obtained by the set structure through thermoelectric simulation. The circuit diagram when M is 2 is shown in fig. 1(b), and after the photosensitive nanowire is triggered, current flows into the current bank. Thermoelectric simulations of the above structure were performed and fig. 1(c) shows the evolution of superconducting currents in the current reservoir over time for different incident photons. The single photon excitation and two-photon excitation of a single nanowire are considered here. There are six cases of photon incidence: 1+1 in FIG. 1(b) represents that 1 photon is incident on each of the two nanowires; 1+2 represents that one nanowire has 1 photon incident, while the other nanowire has 2 photons incident; 2+2 represents that 2 photons respectively enter the two nanowires; 1+0 represents that one nanowire has 1 photon incident, while the other nanowire has no photon incident; 2+0 represents that one nanowire has 2 photons incident and the other nanowire has no photons incident; 0+0 represents that both nanowires are free from photon incidence.
The simulation result shows that the current I in the current libraryRSuperconducting nanowire multi-light with six states corresponding to incident photon situations, validating parallel current reservoirsFeasibility of sub-detectors. In addition, to demonstrate the expansibility of the photosensitive nanowire number M, the embodiment of the present invention also simulates the case where M is 20, the specific structure is shown in fig. 2(a), the simulated steady-state current distribution of all current banks is shown in fig. 2(b), and fig. 2(c) shows the minimum difference of the steady-state currents in the current banks for different incident photon numbers n. On the basis of considering the current resolution capability of the yTron structure, the superconducting nanowire multi-photon detector can distinguish 13 photons at most under high fidelity when M is 20, and when the incident photons are larger than 13, the fidelity is reduced.
Second, yTron structure design
The yTron basic structure is shown in FIG. 3(a), wherein a read arm is integrated into the current pool structure, and the read arm and the current pool are at an angle, and the angle is formed by the read arm
I.e. the current I of the current bank can be readR. In the design process, the widths of the current bank and the reading arm are ensured to be similar; on the basis, the included angle of the two arms and the radian of the interface are adjusted, so that the measuring range of the yTron reading circuit covers the change range of the current in the current bank, the resolution ratio is smaller than the current amplification caused by a single photon detection event every time, and the resolution of photon detection every time can be realized through the reading of the yTron. Designed for superconducting nanowire multi-photon detector under the condition of M-2 through the processes
And IRThe relationship (c) is shown in FIG. 3 (b).
Processing of photon number resolution detector
Sputtering a layer of titanium niobium nitride material with the thickness of about 9nm on the oxide wafer substrate in a magnetron sputtering mode;
transferring the nanowire pattern to an electron beam exposure glue by an electron beam exposure method, and etching the nanowire pattern by a reactive ion beam etching method by using the electron beam exposure glue as a mask;
an electrical connection electrode (titanium/gold) aligned with the nanowire pattern is deposited on the superconducting thin film by a photolithography-electron beam evaporation-lift-off method.
Four, photon number resolution detector system testing
The schematic structural diagram of the photon number-resolving detector system is shown in fig. 4(a), and the feasibility of the photon number-resolving detector is verified by measuring the distribution of the photon number in coherent light pulses by using the whole detection system. The overall experimental set-up was designed as follows: firstly, a designed photon number resolution detector is arranged in a refrigerator, and the temperature is reduced to a 2.7K temperature zone. The light source adopts a pulse laser with 1550 nm center wavelength, passes through a polarization controller and an optical attenuator, and then is introduced into a refrigerator to be coupled to a photon number resolution detector. In the aspect of electrical structure, an Arbitrary Waveform Generator (AWG) generates two paths of current pulse signals, and the two paths of current pulse signals are respectively used as bias current signals I of a photon number resolution detector after being attenuated by a radio frequency attenuatorbiasAnd a sense current signal Iread. Sensing the current signal IreadAmplified by amplifier and fed into oscilloscope for observation IreadCritical current of signal
Finally realizing the current I in the current bankRIs read out.
The operation of the superconducting nanowire multi-photon detector is divided into three stages: pre-biasing, photon detection, resetting the device. In the pre-bias stage, inputting negative current pulses into the AWG at the yTron reading arm end to transfer most of the current in the current reservoir to the photosensitive nanowire; in the photon detection stage, after light pulse incidence, the yTron reading arm end adopts an AWG to input a triangular wave signal, and the triangular wave signal is used for scanning and measuring the current value in a current bank, so that the photon number distribution information in each pulse is obtained; and a device resetting stage, wherein after each triangular wave signal, a large bias current pulse signal is input to change the whole device into a resistive state, and then the input of the bias current is stopped to restore the device to a superconducting state, so that the device is reset. The distribution of the actual photon number in each pulse under different incident photon numbers is measured by adjusting the attenuation value of the optical attenuator, and compared with the Poisson distribution predicted by theory, the reliability of photon resolution detection is verified. Figure 4(b) shows the timing profile of the read current and the bulk bias current generated by the AWG at a certain photon count incidence and gives the timing profile of the final expected measured current library superconducting current.
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited, as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A photon number resolving detector, characterized in that it comprises: a superconducting nanowire multi-photon detector is provided,
the superconducting nanowire multi-photon detector is formed by connecting a plurality of photosensitive nanowires and 1 current bank in parallel, after the plurality of photosensitive nanowires detect photons, overflowing current is stored in the current bank, and the magnitude of superconducting current in the current bank and the number of detected photons form a corresponding relation;
determining the ratio of the line width between the photosensitive nanowire and the current bank and the ratio of the kinetic energy inductance between the photosensitive nanowire and the current bank; a y-type read-out arm is integrated on the current bank structure to realize non-invasive measurement of current I in the current bankR。
2. The photon number resolving detector of claim 1, wherein said integrating a y-type read arm on the current bank structure provides non-invasive measurement of the current I in the current bankRThe method specifically comprises the following steps:
current I in the current bank to be monitoredRA y-type read arm into which a read current flows;an included angle exists between the reading arm and the current bank, and the superconducting current in the current bank is deduced by measuring the critical current of the reading arm, so that the reading of the number of the detection photons is realized.
3. A photon number-resolving detection system, the system comprising: the photon number resolving detector of claim 1,
the photon number resolution detector is arranged in the refrigerator, the light source adopts a pulse laser, and the light source is coupled to the photon number resolution detector after passing through the polarization controller and the optical attenuator;
the random waveform generator generates two paths of current pulse signals, the current pulse signals are attenuated by the radio frequency attenuator and then are respectively used as a bias current signal and a read current signal of the photon number resolution detector, the read current signal is amplified by the amplifier and then is led into the oscilloscope, the critical current of the read current signal is observed, and finally the current I in the current library is realizedRIs read out.
4. A photon number resolving detection system according to claim 3, wherein the system operates in 3 phases:
in the pre-bias stage, a negative current pulse is input into an arbitrary waveform generator at the end of the y-type read-out arm, so that most of current in the current bank is transferred into the photosensitive nanowire;
in the photon detection stage, after light pulse incidence, a triangular wave signal is input by a y-type reading arm end by adopting an arbitrary waveform generator, and the triangular wave signal is used for scanning and measuring the current value in a current library to obtain photon number distribution information in each pulse;
and in the device resetting stage, after each triangular wave signal, a large bias current pulse signal is input to enable the whole device to be in a resistive state, and then the input of the bias current is stopped to enable the device to be recovered to a superconducting state.
5. A photon number resolving detection system according to claim 3 or 4, further comprising:
the distribution of the actual photon number in each pulse under different incident photon numbers is measured by adjusting the attenuation value of the optical attenuator, and compared with the Poisson distribution predicted by theory, the reliability of photon resolution detection is verified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010596029.6A CN111637981B (en) | 2020-06-28 | 2020-06-28 | Photon number resolution detector and system thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010596029.6A CN111637981B (en) | 2020-06-28 | 2020-06-28 | Photon number resolution detector and system thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111637981A CN111637981A (en) | 2020-09-08 |
| CN111637981B true CN111637981B (en) | 2022-05-27 |
Family
ID=72329164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010596029.6A Active CN111637981B (en) | 2020-06-28 | 2020-06-28 | Photon number resolution detector and system thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111637981B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112229510B (en) * | 2020-10-15 | 2022-06-24 | 中国科学院上海微***与信息技术研究所 | Single photon detector and preparation method |
| EP4304322A1 (en) * | 2022-07-07 | 2024-01-10 | Technische Universität München | Photon detection |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680264A (en) * | 2018-04-18 | 2018-10-19 | 天津大学 | A kind of superconducting nano-wire single-photon detector system without radio frequency amplifier |
| EP3502636A1 (en) * | 2017-12-21 | 2019-06-26 | PicoQuant Innovations GmbH | System and method for time-correlated photon-number-resolved counting applications |
| WO2019213147A1 (en) * | 2018-05-01 | 2019-11-07 | PsiQuantum Corp. | Photon number resolving superconducting detector |
| CN110702237A (en) * | 2019-09-12 | 2020-01-17 | 天津大学 | Superconducting nanowire single photon detector array capable of distinguishing photon energy |
| CN110806263A (en) * | 2019-10-22 | 2020-02-18 | 天津大学 | Multi-photon composite counter |
| CN111130652A (en) * | 2019-12-31 | 2020-05-08 | 南京大学 | Photon number resolution enhanced laser communication system and method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11274962B2 (en) * | 2017-11-10 | 2022-03-15 | Duke University | Systems and methods for multiphoton detection using a conventional superconducting nanowire single photon detector |
-
2020
- 2020-06-28 CN CN202010596029.6A patent/CN111637981B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3502636A1 (en) * | 2017-12-21 | 2019-06-26 | PicoQuant Innovations GmbH | System and method for time-correlated photon-number-resolved counting applications |
| CN108680264A (en) * | 2018-04-18 | 2018-10-19 | 天津大学 | A kind of superconducting nano-wire single-photon detector system without radio frequency amplifier |
| WO2019213147A1 (en) * | 2018-05-01 | 2019-11-07 | PsiQuantum Corp. | Photon number resolving superconducting detector |
| CN110702237A (en) * | 2019-09-12 | 2020-01-17 | 天津大学 | Superconducting nanowire single photon detector array capable of distinguishing photon energy |
| CN110806263A (en) * | 2019-10-22 | 2020-02-18 | 天津大学 | Multi-photon composite counter |
| CN111130652A (en) * | 2019-12-31 | 2020-05-08 | 南京大学 | Photon number resolution enhanced laser communication system and method |
Non-Patent Citations (1)
| Title |
|---|
| Superconducting nanowire multi-photon detectors enabled by current reservoirs;KAI ZOU等;《Photonics Research》;20200401;第8卷(第4期);601-609页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111637981A (en) | 2020-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104752534B (en) | Superconducting nano-wire single-photon detector and preparation method thereof | |
| CN111637981B (en) | Photon number resolution detector and system thereof | |
| Dauler et al. | Multi-element superconducting nanowire single-photon detector | |
| Cui et al. | Linearity indices and linearity improvement of 2-D tetralateral position-sensitive detector | |
| CN106289515A (en) | A kind of with from the superconducting nano-wire single-photon detector of gaining structure | |
| US20170176545A1 (en) | Monolithic three-axis magnetic field sensor and its manufacturing method | |
| Rosenberg et al. | Performance of photon-number resolving transition-edge sensors with integrated 1550 nm resonant cavities | |
| CN110057446A (en) | A kind of light power meter with wide spectral range and machine with wide range | |
| Oripov et al. | A superconducting nanowire single-photon camera with 400,000 pixels | |
| Tao et al. | A high speed and high efficiency superconducting photon number resolving detector | |
| Chen et al. | Sixteen-pixel NbN nanowire single photon detector coupled with 300-μm fiber | |
| CN109357774B (en) | High-speed superconducting photon camera | |
| CN110686785A (en) | Polarization insensitive superconducting avalanche single photon detector | |
| CN103364091A (en) | Multifunctional superconducting single photon detector | |
| RU2346357C1 (en) | Superconducting photon-counting detector for visible and infrared spectral range | |
| Mattioli et al. | Large area single photon detectors based on parallel configuration NbN nanowires | |
| CN110806263B (en) | Multi-photon composite counter | |
| JP6206837B2 (en) | Superconducting single photon detector and structure determination method for its light receiving wiring | |
| Chen et al. | A 16-pixel NbN nanowire single photon detector coupled with 300 micrometer fiber | |
| CN112229510B (en) | Single photon detector and preparation method | |
| Marsili et al. | Superconducting parallel nanowire detector with photon number resolving functionality | |
| CN109029743B (en) | Microwave single photon detector, detection method and preparation method thereof | |
| Zhao et al. | A single-photon imager based on microwave plasmonic superconducting nanowire | |
| Annunziata et al. | Superconducting niobium nanowire single photon detectors | |
| Los et al. | High-Performance Photon Number Resolving Detectors for 850-950 nm wavelengths |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |