CN110610873A - 真空处理装置、真空处理***和真空处理方法 - Google Patents
真空处理装置、真空处理***和真空处理方法 Download PDFInfo
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Abstract
本发明提供一种有利于真空处理装置的小型化和简单化有利的技术。在真空处理装置的处理容器内中,在彼此相邻的位置,第一输送空间和第二输送空间在水平方向延伸设置,并且,沿上述延伸设置方向在第一输送空间与第二输送空间之间形成中间壁部。在第一输送空间沿延伸设置方向配置1个以上的上述处理空间,在第二输送空间沿延伸设置方向配置2个以上的上述处理空间。而且,在中间壁部内形成有:对上述3个以上的处理空间分别设置的排气通路和上述排气通路在其中合流的合流排气通路。在处理容器内设置合流排气通路,因此能够实现真空处理装置的小型化和简单化。
Description
技术领域
本发明涉及真空处理装置、真空处理***和真空处理方法。
背景技术
在半导体装置的制造工序中,在真空气氛下对作为基片的半导体晶片(以下记为晶片)进行蚀刻、成膜等的各种各样的处理。作为如上所述对基片进行真空处理的真空处理装置,在专利文献1记载了一种在真空容器内在周向等间隔地配置4个基片处理部的结构。在真空容器内的中央设置有晶片的移载机构,经由设置于真空容器的外周部底面的排气口对真空容器内的气氛进行真空排气。
现有技术文献
专利文献
专利文献1:日本特开2017-199735号公报
发明内容
发明要解决的技术问题
本发明提供一种有利于真空处理装置的小型化和简单化的技术。
用于解决技术问题的技术方案
本发明的一个方式的真空处理装置,
其对配置于真空气氛的处理空间的基片供给处理气体以进行真空处理,上述真空处理装置的特征在于,包括:
用于输送上述基片的第一输送空间和第二输送空间,其形成在进行上述真空处理的处理容器内的彼此相邻的位置,并且各自从形成于上述处理容器的侧面的送入送出口在水平方向延伸设置;和
沿上述延伸设置方向形成在上述第一输送空间与第二输送空间之间的中间壁部,
在上述第一输送空间沿上述延伸设置方向配置1个以上的上述处理空间,在上述第二输送空间沿上述延伸设置方向配置2个以上的上述处理空间,
在上述中间壁部内形成有:对隔着该中间壁部配置的3个以上的处理空间分别设置的排气通路;和合流排气通路,上述排气通路在其中合流。
发明效果
依照本发明,有利于真空处理装置的小型化和简单化。
附图说明
图1是说明本发明的一实施方式的真空处理***的结构的俯视图。
图2是说明设置在上述真空处理***的真空处理装置的结构例的分解立体图。
图3是说明上述真空处理装置的结构的概略俯视图。
图4是说明上述真空处理装置的结构的纵截侧视图。
图5是说明上述真空处理装置的气体供给***的一例的说明图。
图6是说明上述真空处理装置的作用的局部纵截侧视图。
图7A是说明本发明的真空处理装置的第一变形例的俯视图。
图7B是说明本发明的真空处理装置的第二变形例的俯视图。
图7C是说明本发明的真空处理装置的第三变形例的俯视图。
附图标记说明
2 真空处理装置
20 处理容器
21 送入送出口
22 载置台
3 中间壁部
31 排气通路
32 合流排气通路
33 排气口
S1~S4 处理空间
T1 第一输送空间
T2 第二输送空间。
具体实施方式
参照图1的俯视图,对本发明的实施方式的真空处理***1进行说明。该真空处理***1包括送入送出端口11、送入送出单元12、真空输送单元13和真空处理装置2。在图1中,以X方向为左右方向,以Y方向为前后方向,以送入送出端口11为前后方向的跟前侧进行说明。在送入送出单元12的跟前侧在前后方向与送入送出端口11连接,在送入送出单元12的里侧在前后方向与真空输送单元13连接。
送入送出端口11载置作为输送容器的载体C,该载体C收纳作为处理对象的基片,例如基片由作为直径例如为300mm的圆形基片的晶片W构成。送入送出单元12是用于在载体C与真空输送单元13之间送入、送出晶片W的单元。送入送出单元12具有:利用输送机构120在常压气氛中在其与载体C之间交接晶片W的常压输送室121;和将放置晶片W的气氛在常压气氛与真空气氛之间切换的负载锁定室122。
真空输送单元13包括形成真空气氛的真空输送室14,在该真空输送室14的内部配置基片输送机构15。真空输送室14呈例如俯视时沿前后方向的方向具有长边的长方形。在真空输送室14的4个侧壁中长方形的彼此相对的长边各自与多个例如3个真空处理装置2连接,跟前侧的短边与设置于送入送出单元12内的负载锁定室122连接。图中G是设置在常压输送室121与负载锁定室122之间、负载锁定室122与真空输送单元13之间、真空输送单元13与真空处理装置2之间的闸阀。该闸阀G开闭分别设置在彼此连接的单元的晶片W的送入送出口。
基片输送机构15用于在真空气氛中在送入送出单元12与真空处理装置2之间输送晶片W,由多关节臂形成,具有保持晶片W的基片保持部16。该例中的真空处理装置2如后所述在真空气氛中对多个(例如4个)晶片W一并进行气体处理。因此,基片输送机构15的基片保持部16构成为能够保持例如4个晶片W以使得对真空处理装置2一并交接4个晶片W。
具体而言,基片输送机构15例如包括基台151、水平延伸的第一臂152、水平延伸的第二臂153和基片保持部16。第一臂152的根部侧设置在基台151上,绕基台151上的垂直的旋转轴旋转,第二臂153的根部侧设置在第一臂152的前端部上,绕第一臂152的前端部上的垂直旋转轴旋转。基片保持部16包括第一基片保持部161、第二基片保持部162和连接部163。第一基片保持部161和第二基片保持部162构成为彼此并行地水平延伸的2个细长的刮铲状。连接部163以与第一基片保持部161及第二基片保持部162的伸长方向正交的方式在水平方向延伸,将第一基片保持部161和第二基片保持部162的根端彼此连接。连接部163的长度方向的中央部设置在第二臂153的前端部上,绕第二臂153的前端部上的垂直旋转轴旋转。第一基片保持部161、第二基片保持部162在后文述说。
接着,关于真空处理装置2,参照图2~图4,说明例如适合对晶片W进行等离子体CVD(Chemical Vapor Deposition)处理的成膜装置的例子。图2是说明真空处理装置2的结构的分解立体图,图3概略地表示设置于真空处理装置2的处理空间的俯视图,图4是沿图3中的A-A’线将真空处理装置2切断来表示的纵截侧视图。
6个真空处理装置2彼此同样地构成,能够在真空处理装置2间彼此并行地进行晶片W的处理。真空处理装置2具有俯视呈矩形的处理容器(真空容器)20。在图2、图4中,201是处理容器20的顶部部件,202是容器主体。处理容器20具有例如包围处理容器20的周围的侧壁部203,并且在4个侧壁部203中与真空输送室14连接的侧壁部203,以在前后方向(图2中,Y’方向)排列的方式形成2个送入送出口21。该送入送出口21由上述的闸阀G开闭。
如图2和图3所示,在处理容器20的内部,用于输送晶片W的第一输送空间T1和第二输送空间T2设置在彼此相邻的位置,上述第一输送空间T1和第二输送空间T2从各送入送出口21在水平方向延伸设置。此外,在处理容器20内的上述第一输送空间T1与第二输送空间T2之间,沿延伸设置方向(图2中,X’方向)形成中间壁部3。在第一输送空间T1沿延伸设置方向配置2个处理空间S1、S2,在第二输送空间T2沿延伸设置方向配置2个处理空间S3、S4。因此,在处理容器20内,从上方侧观察时,以2×2的行列状配置共计4个处理空间S1~S4。此处所说的水平方向,也包括在制造时的公差等的影响下,没有送入送出晶片W的动作中装置之间的接触等影响的范围内,稍微向延伸设置方向倾斜的方向。
还参照图4,说明包含处理空间S1~S4的处理容器20的内部结构。4个处理空间S1~S4彼此同样构成,各自形成在载置晶片W的载置台22与和该载置台22相对配置的气体供给部4之间。图4表示第一输送空间T1的处理空间S1和第二输送空间T2的处理空间S4。以下,以处理空间S1为例进行说明。
载置台22兼用作下部电极,例如形成为由埋入金属或金属网电极的氮化铝(AlN)形成的扁平的圆柱状,能够利用兼用作旋转机构的驱动机构23经由驱动轴231升降并绕铅垂轴旋转。图4中,用实线描绘处于处理位置的载置台22,用虚线表示处于交接位置的载置台22。处理位置是执行后述的真空处理(成膜处理)时的位置,交接位置是与已述的基片输送机构15之间交接晶片W的位置。图中24是各自埋设于载置台22的加热器,将载置于载置台22的各晶片W加热至60℃~600℃程度。另外,载置台22与接地电位连接。
另外,在处理容器20的底面,多个(例如3个)交接销25设置在与载置台22对应的位置,另一方面,在载置台22形成用于形成该交接销25的通过区域的贯通孔26。当使载置台22下降到交接位置时,交接销25通过贯通孔26,而交接销25的上端从载置台22的载置面突出。关于该交接销25,以在基片输送机构15的第一基片保持部161与第二基片保持部162之间交接晶片W时彼此不缓冲的方式设定第一基片保持部161和第二基片保持部162的形状、交接销25的配置。
此处,说明第一基片保持部161和第二基片保持部162。第一基片保持部161构成为在进入第一输送空间T1后,在第一输送空间T1内的与处理空间S1、S2的各配置位置对应的位置保持晶片W。第一输送空间T1内的与处理空间S1、S2的各配置位置对应的位置,是以将晶片W交接到设置于第一输送空间T1的处理空间S1、S2的2个载置台22的方式设定的位置。此外,第二基片保持部162构成为在进入第二输送空间T2后,在第二输送空间T2内的与处理空间S3、S4的各配置位置对应的位置保持晶片W。第二输送空间T2内的与处理空间S3、S4的各配置位置对应的位置,是以将晶片W交接到形成于第二输送空间T2的处理空间S3、S4的2个载置台22的方式设定的位置。
例如第一基片保持部161和第二基片保持部162形成为各自的宽度小于晶片W的直径,第一基片保持部161和第二基片保持部162各自中,前端侧和根端侧彼此隔开间隔地支承晶片W的背面。关于由第一基片保持部161和第二基片保持部162的前端侧支承的晶片W,例如其中央部由第一基片保持部161和第二基片保持部162的前端支承。
如此,利用基片输送机构15、交接销25和载置台22的协动作用,能够在基片输送机构15与各载置台22之间一并同时地进行例如4个晶片W的交接。图4中的27是轴承部,其将处理容器20内保持为气密的,并且以能够上下移动并旋转的方式保持驱动轴231。
另外,在处理容器20的顶部部件201中的、载置台22的上方侧,经由由绝缘部件形成的引导部件34设置构成上部电极的气体供给部4。气体供给部4包括:盖体42;喷淋板(shower plate)43,其构成与载置台22的载置面相对设置的相对面;和形成在盖体42与喷淋板43之间的气体的流通室44。盖体42与气体分配通路51连接,并且,在喷淋板43,在厚度方向贯通的气体排出孔45例如纵横地配置,将气体以喷淋状向载置台22排出。
各气体供给部4如后文所述经由气体供给管51与气体供给***50连接。气体供给***50例如具有:作为处理气体的反应气体(成膜气体)、吹扫气体、清洁气体的供给源;配管;阀V;流量调整部M等。
喷淋板43经由匹配器40与高频电源41连接。当对喷淋板(上部电极)43与载置台(下部电极)22之间施加高频电力时,利用电容耦合,能够将从喷淋板43供给到处理空间S1的气体(本例中反应气体)等离子体化。
接着,说明在中间壁部3形成的排气通路和合流排气通路。如图3和图4所示,在中间壁部3形成对4个处理空间S1~S4分别设置的排气通路31和上述排气通路31在其中合流的合流排气通路32。合流排气通路32在中间壁部3内在上下方向延伸设置。
在该例中,如图4所示,中间壁部3包括设置于容器主体202侧的壁部主体311和设置于顶部部件201侧的排气通路形成部件312。而且,在排气通路形成部件312的内部设置排气通路31。
另外,在位于处理空间S1~S4的外方侧的中间壁部3的壁面,在每一个处理空间S1~S4中形成排气口33。各排气通路31以将排气口33与合流排气通路32连接的方式形成于中间壁部3。因此,如图4所示,各排气通路31例如在中间壁部3内在水平方向延伸后,向下方侧弯曲而在上下方向延伸设置,与合流排气通路32连接。
例如排气通路31如图3所示截面形成圆形,合流排气通路32的上游端与各排气通路31的下游端连接,各排气通路31的上游侧作为排气口33,在各处理空间S1~S4的外方侧开口。
在各处理空间S1~S4的周围以分别包围各处理空间S1~S4的方式设置排气用的引导部件34。该引导部件34例如是以与该载置台22隔开间隔地包围处于处理位置的载置台22的周围区域的方式设置的环状体。引导部件34在其内部例如纵截面为矩形状,形成俯视时为环状的流通通路35。在图3中,概略地表示处理空间S1~S4、引导部件34、排气通路31和合流排气通路32。
如图4所示,例如关于引导部件34,例如纵截面形状形成为U字状,朝向下方侧配置U字的开口部分。引导部件34嵌入在容器主体202的中间壁部3、形成于侧壁部203侧的凹部204内,在构成上述壁部3、203的部件之间形成已述的流通通路35。
并且,嵌入各壁部3、203的凹部204内的引导部件34形成向处理空间S1~S4开口的缝隙状的缝隙排气口36。如此,在各个处理空间S1~S4的侧周部,沿周向形成缝隙排气口36。并且,流通通路35与己述的排气口33连接,使从缝隙排气口36排出的处理气体向排气口33流通。
另外,着眼于沿第一输送空间T1的延伸设置方向配置的2个处理空间S1、S2的组和沿第二输送空间T2的延伸设置方向配置的2个处理空间S3、S4的组。上述的处理空间S1-S2、S3-S4的组如图3所示,从上方侧观察时,以包围合流排气通路32的方式180°旋转对称地配置。
其结果,从各处理空间S1~S4经由缝隙排气口36、引导部件34的流通通路35、排气口33、排气通路31至合流排气通路32的处理气体的流通通路,以包围合流排气通路32的方式180°旋转对称地形成。此外,舍弃第一输送空间T1、第二输送空间T2、中间壁部3的位置关系,着眼于处理气体的流通通路时,从上方侧观察时,可以说上述的流通通路以包围合流排气通路32呈90°旋转对称的方式形成。
合流排气通路32经由形成于处理容器20的底面的合流排气口205与排气管61连接,该排气管61经阀机构7与构成真空排气机构的真空泵62连接。真空泵62在例如一个处理容器20设置一个,例如如图1所示,各真空泵62的下游侧的排气管61合流,与例如工厂排气***连接。
阀机构7是开闭形成于排气管61内的处理气体的流通通路的机构,包括例如壳体71和开闭部72。在该例中,在壳体71的上表面形成与上游侧的排气管61连接的第一开口部73,在壳体71的侧面形成与下游侧的排气管61连接的第二开口部74。
开闭部72例如包括:形成为封闭第一开口部73的大小的开闭阀721;升降机构722,其设置在壳体71的外部,并使开闭阀721在壳体71内升降。如此,开闭阀71构成为能够图4及图5中点划线所示的封闭第一开口部73的关停位置与退避到图4及图5中实线所示的比第一开口部73及第二开口部74靠下方侧的开放位置之间升降。当开闭阀721处于上述关停位置时,合流排气口205的下游端被封闭,处理容器20内的排气停止。另外,当开闭阀721处于上述开放位置时,合流排气口205的下游端打开,将处理容器20内排气。
接着,参照图2和图5,以使用2种反应气体的情况为例对处理气体的供给***进行说明。此外,为方便图示,在图4中将反应气体的供给***总示为一个***(气体分配通路510、共用的气体供给通路52)。各气体供给部4的上表面的大致中央与各气体供给管51连接。该气体供给管51通过第一气体分配通路511经由第一共用的气体供给通路521与第一反应气体的供给源541及吹扫气体的供给源55连接。此外,气体供给管51通过第二气体分配通路512经由第二共用的气体供给通路522与第二反应气体的供给源542及吹扫气体的供给源55连接。阀V21、流量调节部M21用于供给第一反应气体,阀V22、流量调节部M22用于供给第二反应气体,阀V3、流量调节部M3用于供给吹扫气体。
另外,气体供给管51通过清洁气体供给通路532经由等离子体装置(RPU:RemotePlasma Unit)531与清洁气体的供给源53连接。清洁气体供给通路532在等离子体装置531的下游侧分支为4个子分支,分别与气体供给管51连接。在清洁气体供给通路532中的等离子体装置531的上游侧设置有阀V1和流量调节部M1。此外,在等离子体装置531的下游侧对每个分支出的分支管设置有阀V11~V14,在清洁时打开对应的阀V11~V14。以利用CVD形成绝缘氧化膜(SiO2)的情况为例,作为反应气体例如能够使用四乙氧基硅烷(TEOS)、氧气(O2),作为吹扫气体能够使用例如氮气(N2)等的非活性气体。作为反应气体使用TEOS和O2气体的情况下,例如从第一反应气体的供给源541供给TEOS,从第二反应气体的供给源542供给O2气体。此外,作为清洁气体能够使用例如三氟化氮(NF3)气体。
在该例中,从各气体分配通路51至气体供给部4为止的各处理气体路径形成为对从共用的气体供给通路52分配的处理气体的流导(conductance)彼此相同。例如如图2和图5所示,第一共用的气体供给通路521的下游侧分支为2个***,并且,分支的气体供给通路还进一步分支为2个***以树形状形成第一气体分配通路511。该第一气体分配通路511在清洁气体用的阀V11~V14的下游侧各自与气体供给管51连接。另外,第二共用的气体供给通路522的下游侧分支为2个子分支,并且分支出的气体供给通路进一步分支为2个子分支,以联赛(tournament)形状形成第二气体分配通路512。第二气体分配通路512在清洁气体用的阀V11~V14的下游侧分别与气体供给管51连接。
而且,例如各第一气体分配通路511从上游端(与第一共用的气体供给通路521连接的端部)至下游端(与气体供给部4或者气体供给管51连接的端部)的长度和内径形成为在第一气体分配通路511彼此之间相同。此外,例如各第二气体分配通路512从上游端(与第二共用的气体供给通路522连接的端部)至下游端的长度和内径形成为在第二气体分配通路512彼此之间相同。如此,经由第一气体分配通路511、气体供给部4、处理空间S1~S4和排气通路31至合流排气通路32为止的各处理气体路径形成为对从第一共用的气体供给通路521分配的处理气体的流导彼此相同。另外,经第二气体分配通路512、气体供给部4、处理空间S1~S4和排气通路31至合流排气通路32的各处理气体路径形成为对从第二共用的气体供给通路522分配的处理气体的流导彼此相同。
另外,在使用多个的反应气体的情况下,替代使用图5说明的例子,可以在气体供给***50内预先使反应气体合流后将其供给到各处理空间S1~S4。在这样的情况下,当使用一种反应气体时,可以以图4中总示为1个***的例子作为实际的配管构成,各气体供给管51分别与气体分配通路510连接。上述气体分配通路510与共用的气体供给通路52合流而与气体供给***50连接。在图4中,将反应气体供给用的阀记为V2,将流量调节部记为M2。在该情况下,经气体分配通路510、气体供给部4、处理空间S1~S4和排气通路31至合流排气通路32的各处理气体路径也形成为对从共用的气体供给通路52分配的处理气体的流导彼此相同。此外,如图5所示,可以将底部吹扫用的吹扫气体从气体供给源56经由具有阀V4、流量调节部M4的气体供给通路561供给到各处理空间S1~S4。
在真空处理***1设置有由计算机构成的控制部8。控制部8具有例如由程序、存储器、CPU构成的数据处理部等。程序中编入命令,以使得能够从控制部8对真空处理***1的各部发送控制信号,执行后述的成膜处理。程序例如存储在光盘、硬盘、MO(光磁盘)等存储介质而被安装到控制部8。
接着,对上述的真空处理***1中的晶片W的输送和处理简单地进行说明。由送入送出单元12中的输送机构120在常压气氛下接收载置于送入送出端口11的载体C内的晶片W,将该晶片W输送到负载锁定室122内。接着,在将负载锁定室122内从常压气氛切换至真空气氛后,真空输送单元13的基片输送机构15接收负载锁定室122内的晶片W,该晶片W经由真空输送室14被输送到规定的真空处理装置2。基片输送机构15如上所述在第一基片保持部161和第二基片保持部162分别保持2个共计4个晶片W。
打开对被输送的晶片W进行处理的真空处理装置2的闸阀G,使第一基片保持部161和第二基片保持部162同时进入第一输送空间T1和第二输送空间T2,对各交接销25同时交接晶片W。接着,使第一基片保持部161和第二基片保持部162从真空处理装置2后退,关闭闸阀G。
此后,例如控制阀机构7的开闭阀721的位置,将处理容器20内设定为规定的压力的真空气氛,并且使各载置台22上升至处理位置,利用各加热器24加热晶片W。接着,在处理容器20内的4个处理空间S1~S4中从各气体供给部4供给成膜用的反应气体。此外,将各高频电源41打开,对各气体供给部4与载置台22之间分别供给高频,将从各气体供给部4供给的气体等离子体化以执行成膜处理。如此利用等离子体化的反应气体,在晶片W表面成膜。
此处,参照图4和图6,说明处理气体流入、流出各处理空间S1~S4的流程。来自各供给源541、542的处理气体(反应气体)经由共用的气体供给通路521、522、各气体分配通路511、512被分配供给到气体供给部4的流通室44。流入流通室44的处理气体在流通室44内彼此混合,混合后的处理气体经由喷淋板43以喷淋状向各载置台2上的晶片W排出。
另一方面,将处理容器20内经由共用的合流排气通路32排气,因此供给到各处理空间S1~S4的处理气体经由在其侧周部开口的环状的缝隙排气口36,被引入流通通路35的内部。流入流通通路35的处理气体向设置于处理容器20的中央侧的排气口33流通。然后,从各排气口33经由各排气通路31至合流排气通路32,向处理容器20的外部流通而被排气。
如此,在处理空间S1~S4内,处理气体流向外方侧,因此在载置于载置台22的晶片W的表面以周向一致的状态进行成膜处理。
另外,对于从气体供给通路521、522分配的处理气体,从各气体分配通路511、512经由各处理空间S1~S4、各排气通路31至合流排气通路32的各处理气体路径的流导形成为彼此相同。因此,通过实验和模拟确认了在各处理空间S1~S4之间,来自气体供给部4的气体的供给状态、排气状态相同。如此对于各载置台22上的晶片W,能够使处理气体流量、处理气体的供给时机、处理气体的流动方向在4个处理空间S1~S4之间相同。其结果,在4个处理空间S1~S4中,能够在彼此相同的条件下进行成膜处理。由此,在各处理空间S1~S4中,即使不进行单独的排气控制,处理空间S1~S4彼此之间排气状态也相同,作为结果,处理的程度相同。如上所述,在各处理空间S1~S4中,不需要单独的排气量控制,控制是容易的。
如此在进行了规定时间的成膜处理后,打开处理容器20的闸阀G,使第一基片保持部161和第二基片保持部162进入,将4个晶片W同时交接到第一基片保持部161和第二基片保持部162。接着,利用输送机构120使保持4个晶片W的基片输送机构15经由送入送出单元12的负载锁定室122返回常压气氛的载体C。
也可以在该真空处理装置2中,例如在执行了预先设定的次数的上述成膜处理后,实施清洁处理。在该清洁处理中,一边对处理容器20内进行排气,一边对各处理空间S1~S4内供给清洁气体并且使等离子体装置531打开以供给经等离子体化的清洁气体。清洁气体例如NF3气体,在等离子体装置531中被高频电力等离子体化,利用由此生成的氟自由基进行清洁。打开将等离子体装置531的2次侧等分支为4个并在其上分别安装的阀V11~V14,将清洁气体经由各气体供给部4供给到各处理空间S1~S4。
该清洁气体从各处理空间S1~S4经由各缝隙排气口36、各流通通路35、各排气口33、各排气通路31通过合流排气通路32,向处理容器20的外部流通。如此,通过供给清洁气体,将附着于处理容器20内的异物除去,与清洁气体一起排出到处理容器20的外部。
依照该实施方式,在各自配置2个处理空间的第一输送空间T1和第二输送空间T2之间形成的中间壁部3,形成对4个处理空间S1~S4分别设置的排气通路31和上述排气通路31在其中合流的合流排气通路32。如上所述,通过在处理容器20内设置对4个处理空间S1~S4进行排气的合流排气通路32,能够使真空处理装置2简单化。此外,设置合流排气通路32,利用排气管61将该合流排气通路32与真空泵62连接,因此1个排气管61即可。因此,能够在处理容器20的下部较大地确保维护空间,能够提高维护性。而且,能够在处理容器20内形成合流排气通路32,因此与将合流排气通路32设置在处理容器20的外部的情况相比,能够抑制配管的布局复杂化,能够缩短总体的排气通路,排气效率提高。
与之相对,如专利文献1(日本特开2017-199735号公报)、US2017/0029948A1(以下也称为“对比文献”)所示,在处理多个晶片的处理容器内设置有晶片的输送机构的结构中,无法在处理容器的中央部设置排气口。因此,不得不从处理容器的周缘侧进行处理容器内的排气。例如,在比较文献所记载的技术中,在处理容器的周缘侧的4个部位形成与处理容器内的4个处理空间分别对应的排气通路。因此,上述4个的排气通路在其中合流的排气通路设置在处理容器的下方侧,装置大型化。另外,在处理容器的下方侧,除了排气用配管的布局变得复杂,有时还需要多个阀,处理容器的下方侧的维护空间被压迫,存在给维护作业带来障碍的可能性。
另外,从上方侧观察时,配置在第一输送空间T1和第二输送空间T2的4个处理空间S1~S4以包围合流排气通路32的方式180°旋转对称地配置。因此,以合流排气通路32为中心配置处理空间S1~S4,因此用于实现处理容器20小型化的设计变得容易。另外,能够使合流排气通路32与各处理空间S1~S4的结构成为共用的,能够使4个处理空间S1~S4的排气状态相同。
而且,将合流排气通路32在中间壁部3内在上下方向延伸设置,因此俯视时合流排气通路32的设置空间已经变小,能够有助于真空处理装置2的小型化。
上述内容中,在处理容器20的第一输送空间T1沿延伸设置方向配置1个以上的处理空间,在上述第二输送空间T2沿延伸设置方向配置2个以上的处理空间即可。图7A是在第一输送空间T1沿延伸设置方向(在图7A中,X’方向)配置1个处理空间S11,在第二输送空间T2沿延伸设置方向配置2个处理空间S12、S13的例子。在中间壁部3内形成对3个处理空间S11~S13分别设置的排气通路31和上述排气通路31在其中合流的合流排气通路32。
此外,图7B是在处理容器20内,在第一输送空间T1沿延伸设置方向配置3个处理空间S21~S23,在第二输送空间T2沿延伸设置方向配置3个处理空间S24~S26的例子。在中间壁部3内形成对上述6个处理空间S21~S26分别设置的排气通路31和上述排气通路31在其中合流的合流排气通路32。
另外,也可以如图7C所示,在处理容器20内,以在中间壁部3内例如在延伸设置方向排列的方式形成多个(例如2个)合流排气通路32。在该例中,在第一输送空间T1沿延伸设置方向配置4个处理空间S31~S34,第二输送空间T2沿延伸设置方向配置4个处理空间S35~S38。而且,在中间壁部3内形成有:对延伸设置方向的跟前的4个处理空间S31、S32、S35、S36分别形成的排气通路31;和合流排气通路32,上述排气通路31在其中合流。并且,在中间壁部3形成有:对延伸设置方向的里侧的4个处理空间S33、S34、S37、S38分别形成的排气通路31;和合流排气通路32,上述排气通路31在其中合流。
在上述图7A~图7C所示的结构中,在中间壁部3设置排气通路31和合流排气通路32,因此能够实现真空处理装置2的小型化及简单化,提高维护性。
另外,在真空处理装置2中实施的真空处理不限于利用CVD法的成膜处理,也可以为利用ALD(Atomic Layer Deposition:原子层沉积)法的成膜处理、蚀刻处理。利用ALD法的成膜处理是反复执行多次下述步骤以层叠反应生成物的成膜处理:使原料气体吸附在晶片W的步骤;和使吸附于晶片W的原料气体与反应气体反应而生成反应生成物的步骤。另外,在真空处理***1中,与真空输送室14连接的真空处理装置2可以为1个。
本发明的实施方式在所有的方面均是例示,不应认为是限制。上述的实施方式在不脱离所附的权利要求的范围及其主旨的情况下,可以以各种方式省略、置换、改变。
Claims (10)
1.一种真空处理装置,其对配置于真空气氛的处理空间的基片供给处理气体以进行真空处理,所述真空处理装置的特征在于,包括:
用于输送所述基片的第一输送空间和第二输送空间,其形成在进行所述真空处理的处理容器内的彼此相邻的位置,并且各自从形成于所述处理容器的侧面的送入送出口在水平方向延伸设置;和
沿所述延伸设置方向形成于所述第一输送空间与第二输送空间之间的中间壁部,
在所述第一输送空间沿所述延伸设置方向配置1个以上的所述处理空间,在所述第二输送空间沿所述延伸设置方向配置2个以上的所述处理空间,
在所述中间壁部内形成有:对隔着该中间壁部配置的3个以上的处理空间分别设置的排气通路;和合流排气通路,所述排气通路在其中合流。
2.如权利要求1所述的真空处理装置,其特征在于:
在所述第一输送空间、第二输送空间分别配置2个处理空间,从上方侧观察时,该4个处理空间以包围所述合流排气通路的方式180°旋转对称地配置。
3.如权利要求1或2所述的真空处理装置,其特征在于:
所述合流排气通路在上下方向延伸设置,所述排气通路各自以将形成于中间壁部的排气口与所述合流排气通路连接的方式设置,其中所述中间壁部位于所述处理空间的外方侧。
4.如权利要求3所述的真空处理装置,其特征在于:
在各所述处理空间与排气口之间设置有:在该处理空间的侧周部沿周向形成的缝隙状的缝隙排气口;和用于使从该缝隙排气口排出的处理气体向所述排气口流通的流通通路。
5.如权利要求1至4中任一项所述的真空处理装置,其特征在于:
所述处理空间形成在载置基片的载置台与向该处理空间供给处理气体的气体供给部之间,其中所述气体供给部具有与该载置台相对配置的相对面。
6.如权利要求5所述的真空处理装置,其特征在于:
包括气体分配通路,其用于将从共用的气体供给通路供给的处理气体分配到各处理空间的气体供给部,
经由气体分配通路、气体供给部、处理空间和排气通路至合流排气通路为止的各处理气体路径形成为对从气体供给通路分配的处理气体的流导彼此相同。
7.一种真空处理***,其特征在于,包括:
真空输送单元,其包括:真空输送室;和基片输送机构,其配置在该真空输送室内,设置有用于输送基片的基片保持部;
权利要求1至6中任一项所述的真空处理装置,其与所述真空输送室连接,经由所述送入送出口使所述基片保持部进入第一输送空间、第二输送空间,由此能够在所述真空输送室与处理空间之间输送基片;
送入送出端口,其能够载置收纳作为处理对象的基片的输送容器;和
在所述输送容器与所述真空输送单元之间送入、送出基片的送入送出单元。
8.如权利要求7所述的真空处理***,其特征在于:
所述基片输送机构包括:
第一基片保持部,其在进入所述第一输送空间后,将基片保持在与该第一输送空间内的处理空间的各配置位置对应的位置;和
第二基片保持部,其在进入所述第二输送空间后,将基片保持在与该第二输送空间内的处理空间的各配置位置对应的位置。
9.如权利要求8所述的真空处理***,其特征在于:
所述基片输送机构使所述第一基片保持部、第二基片保持部同时分别进入所述第一输送空间、第二输送空间来输送基片。
10.一种真空处理方法,其对配置于真空气氛的处理空间的基片供给处理气体以进行真空处理,所述真空处理方法的特征在于,包括:
对进行所述真空处理的处理容器内送入基片,将基片收纳在所述各处理空间的步骤,其中,所述处理容器包括:用于输送所述基片的第一输送空间和第二输送空间,其形成在处理容器内的彼此相邻的位置,并且各自从形成于所述处理容器的侧面的送入送出口在水平方向延伸设置;和沿所述延伸设置方向形成于所述第一输送空间与第二输送空间之间的中间壁部,在所述第一输送空间沿所述延伸设置方向配置1个以上的所述处理空间,在所述第二输送空间沿所述延伸设置方向配置2个以上的所述处理空间,
对收纳有所述基片的各处理空间供给处理气体的步骤;和
使用对在所述中间壁部内形成并隔着该中间壁部配置的3个以上的处理空间分别设置的排气通路和所述排气通路在其中合流的合流排气通路,排出供给到所述各处理空间的处理气体的步骤。
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