JP7308778B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims description 9
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- 239000002784 hot electron Substances 0.000 claims description 31
- 230000007246 mechanism Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
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- 230000007723 transport mechanism Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Description
一実施形態に係るプラズマ処理装置100について、図1を用いて説明する。図1は、一実施形態に係るプラズマ処理装置100の一例を示す断面模式図である。プラズマ処理装置100は、チャンバ1を有する。チャンバ1は、容器12及び蓋体11を有する。容器12及び蓋体11は、例えばアルミニウムから形成される。蓋体11は、有底の容器12の上部開口に設けられている。容器12と蓋体11との間にはOリング13が設けられ、これにより、チャンバ1内の処理室は気密に保持される。容器12と蓋体11との内壁には、プラズマに対する耐腐食性を有する膜が形成されてもよい。当該膜は、酸化アルミニウム、酸化イットリウム等のセラミックスでもよい。
次に、分岐排気管42について説明する。4つの分岐排気管42のそれぞれの流路には、流路を流れるホットエレクトロンのエネルギーを失活させる機構42aを有する。
次に、図5を参照しながら、プラズマ処理装置100を使用して実行する、一実施形態に係るプラズマ処理方法について説明する。図5は、一実施形態に係るプラズマ処理方法(以下、「方法MT」ともいう。)を示すフローチャートである。本処理は、制御部50により制御される。
11 蓋体
12 容器
13 Oリング
14 上部電極
15 ガス供給部
16 ガス供給孔
17 ガス導入管
20 ヒータ
21 電極板
22 支持部
35 昇降機構
36 高周波電源
40 排気マニホールド
41 排気流路
42 分岐排気管
42a 機構
45 合流排気管
47 排気装置
50 制御部
100 プラズマ処理装置
RC,RC1~RC4 リアクタ
S ステージ
Claims (8)
- 複数の処理室と、
複数の前記処理室内を真空排気する複数の排気流路が合流する合流排気管と、
複数の前記排気流路と前記合流排気管との間に配置され、複数の前記排気流路と前記合流排気管とを接続する複数の分岐排気管と、を有し、
複数の前記分岐排気管のそれぞれは、
前記分岐排気管の流路に、前記流路を流れるホットエレクトロンのエネルギーを失活させる機構を有し、
前記機構は、前記分岐排気管の流路をらせん状に形成するように構成され、
前記分岐排気管の流路の出口に、らせん状の前記流路の排気方向に対して90°以下の角度で対面し、ホットエレクトロンが衝突する接地された邪魔板を有する、
プラズマ処理装置。 - 複数の処理室と、
複数の前記処理室内を真空排気する複数の排気流路が合流する合流排気管と、
複数の前記排気流路と前記合流排気管との間に配置され、複数の前記排気流路と前記合流排気管とを接続する複数の分岐排気管と、
前記合流排気管の流路と連通し、プラズマの発生を抑制するためのガスを導入する導入管と、を有し、
複数の前記分岐排気管のそれぞれは、
前記分岐排気管の流路に、前記流路を流れるホットエレクトロンのエネルギーを失活させる機構を有する、
プラズマ処理装置。 - 前記機構は、前記分岐排気管の流路を、前記分岐排気管の長手方向の長さの2倍以上にするように構成される、
請求項1又は2に記載のプラズマ処理装置。 - 前記機構は、前記分岐排気管の流路をらせん状に形成するように構成される、
請求項2~3のいずれか一項に記載のプラズマ処理装置。 - 前記分岐排気管の流路の出口に、らせん状の前記流路の排気方向に対して90°以下の角度で対面し、ホットエレクトロンが衝突する接地された邪魔板を有する、
請求項4に記載のプラズマ処理装置。 - 前記流路を画定する外壁は、グランド電位である、
請求項1~5のいずれか一項に記載のプラズマ処理装置。 - 前記合流排気管の流路と連通し、プラズマの発生を抑制するためのガスを導入する導入管を有する、
請求項1に記載のプラズマ処理装置。 - 複数の処理室内を真空排気する複数の排気流路が合流する合流排気管と、複数の前記排気流路と前記合流排気管との間に配置され、複数の前記排気流路と前記合流排気管とを接続する複数の分岐排気管と、複数の前記分岐排気管の流路を流れるホットエレクトロンのエネルギーを失活させる機構と、前記合流排気管の流路と連通し、プラズマの発生を抑制するためのガスを導入するガス導入管と、制御部と、を有するプラズマ処理装置により実行するプラズマ処理方法であって、
前記制御部は、
複数の前記処理室の少なくともいずれかに基板を準備する工程と、
準備した前記基板の数が複数の前記処理室の数よりも少ない場合、前記ガス導入管からプラズマの生成を抑制するためのガスを導入する工程と、
準備した前記基板を処理ガスのプラズマにより処理する工程と、
複数の前記排気流路、複数の前記分岐排気管及び前記合流排気管を介して複数の前記処理室を排気する工程と、
を有するプラズマ処理方法。
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JP2020030328A JP7308778B2 (ja) | 2020-02-26 | 2020-02-26 | プラズマ処理装置及びプラズマ処理方法 |
US17/904,321 US20230056750A1 (en) | 2020-02-26 | 2021-02-15 | Plasma processing device and plasma processing method |
KR1020227031485A KR20220141835A (ko) | 2020-02-26 | 2021-02-15 | 플라스마 처리 장치 및 플라스마 처리 방법 |
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JP2003208999A (ja) | 2002-01-10 | 2003-07-25 | Sekisui Chem Co Ltd | 放電プラズマ処理方法及びその装置 |
JP2005163062A (ja) | 2003-11-28 | 2005-06-23 | Mitsubishi Shoji Plast Kk | プラズマcvd成膜装置 |
JP2018141177A (ja) | 2017-02-24 | 2018-09-13 | 三菱重工機械システム株式会社 | プラズマ成膜装置およびプラズマ成膜方法 |
JP2019220509A (ja) | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | 真空処理装置、真空処理システム、及び真空処理方法 |
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JPH04302143A (ja) * | 1991-03-29 | 1992-10-26 | Toshiba Corp | 表面処理装置 |
JP2003249487A (ja) | 2002-02-25 | 2003-09-05 | Tokyo Electron Ltd | プラズマ処理装置のプラズマ漏洩防止板 |
KR101083448B1 (ko) * | 2009-10-29 | 2011-11-14 | 주식회사 뉴파워 프라즈마 | 다중 기판처리챔버 |
JP2019087576A (ja) | 2017-11-02 | 2019-06-06 | 東京エレクトロン株式会社 | 成膜装置、及び成膜方法 |
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JP2003208999A (ja) | 2002-01-10 | 2003-07-25 | Sekisui Chem Co Ltd | 放電プラズマ処理方法及びその装置 |
JP2005163062A (ja) | 2003-11-28 | 2005-06-23 | Mitsubishi Shoji Plast Kk | プラズマcvd成膜装置 |
JP2018141177A (ja) | 2017-02-24 | 2018-09-13 | 三菱重工機械システム株式会社 | プラズマ成膜装置およびプラズマ成膜方法 |
JP2019220509A (ja) | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | 真空処理装置、真空処理システム、及び真空処理方法 |
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