CN110600366A - (100)晶向金刚石n沟道结型场效应晶体管及其制备方法 - Google Patents
(100)晶向金刚石n沟道结型场效应晶体管及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种(100)晶向金刚石n沟道结型场效应晶体管及其制备方法,解决了p沟道结型场效应晶体管空穴迁移率低的问题。(100)晶向金刚石n沟道结型场效应晶体管,包括设有两个沟道的n型金刚石层,n型金刚石层的表面沿水平方向依次设置有源极、n‑p结和漏极,在n‑p结的上方设置有栅极,源极、漏极与n型金刚石层之间均设置有欧姆电极,欧姆电极即为高导电表面。
Description
【技术领域】
本发明属于半导体器件技术领域,具体涉及一种(100)晶向金刚石n沟道结型场效应晶体管及其制备方法。
【背景技术】
场效应晶体管是利用输入回路的电场效应来控制输出回路电流的一种半导体器件,是集成电路中一种重要的器件单元。传统的场效应晶体管以硅材料为基础,但是随着器件尺寸的减小,硅基场效应晶体管的性能已经难以满足要求。因此,人们尝试开发宽禁带半导体材料GaN和SiC等。但是GaN和SiC材料热导率较低,因此其场效应晶体管在高温、高频、大功率应用领域的受到了一定的限制。这个时候,在热、电、声、光、机械等方面具有优良性能的金刚石进入了科学家的视野。金刚石具有高导热率、高机械强度、高电子和空穴迁移率以及优异的介电击穿强度等性能,是研发高温、高频、大功率场效应晶体管器件的理想候选材料。
金刚石场效应晶体管有金属-氧化物-半导体场效应和结型场效应晶体管两种。由于金刚石n型掺杂并不成熟,因此金刚石场效应晶体管主要以p沟道为主。由于金刚石电子的迁移率高于空穴的迁移率,因此人们更希望得到n沟道金刚石场效应晶体管。
【发明内容】
本发明的目的是提供一种(100)晶向金刚石n沟道结型场效应晶体管及其制备方法,以解决p沟道结型场效应晶体管空穴迁移率低的问题。
本发明采用以下技术方案:(100)晶向金刚石n沟道结型场效应晶体管的制备方法,包括以下步骤:
步骤一、采用微波等离子体化学气相沉积方法在(100)晶向本征单晶金刚石衬底1上生长一层n型金刚石层;
步骤二、在n型金刚石层的表面制备金属掩膜,利用刻蚀技术在n型金刚石层中刻蚀出两个凹槽;
步骤三、采用微波等离子体化学气相沉积方法在两个凹槽的内表面均生长一层n型金刚石薄层,得到样品A;
步骤四、采用硫酸和硝酸体积比1:1混合液超过200℃条件下加热样品A,去除金属掩膜,同时使得n型金刚石薄层的表面氢终端氧化成氧终端,然后在900℃以上退火5min以上得到使n型金刚石薄层表面转变成高导电表面;
步骤五、在一个高导电表面上制备源极,在另一个高导电表面上制备漏极,在n型金刚石层的上表面淀积一层电介质掩膜,待淀积电介质掩膜的上表面不包含源极的顶面、漏极的顶面、以及n型金刚石层上待生长栅极的顶面;
步骤六、采用微波等离子体化学气相沉积方法,在n型金刚石层上待生长栅极的顶面上生长一层p型金刚石层,然后采用紫外臭氧处理将表面氢终端氧化成氧终端;
步骤七、在p型金刚石层上制备栅极,并通过退火形成欧姆接触。
进一步的,n型金刚石层,为磷掺杂层,掺杂浓度大于等于1016cm-3,研磨抛光处理后的厚度为1-10μm,表面粗糙度小于2nm。
进一步的,步骤三中,n型金刚石薄层由微波等离子体化学气相沉积技术外延而得,生长气氛中磷/碳体积比大于0.01%,厚度为10-100nm。
进一步的,本征单晶金刚石衬底为高温高压合成衬底、CVD合成衬底或自支撑金刚石薄膜。
进一步的,步骤二中,金属掩膜为能溶于硫酸和硝酸混合液的材料。
进一步的,步骤二中,刻蚀方法为反应离子刻蚀或者感应耦合等离子体刻蚀,凹槽的深度为0.5-9.8μm,凹槽深度小于n型金刚石层的厚度。
进一步的,步骤五中,源极和漏极为高熔点金属。
进一步的,步骤六中,p型金刚石层为硼掺杂层,掺杂浓度≥1018cm-3,厚度为100-500nm。
进一步的,步骤七中,栅极为能与金刚石形成碳化物的金属,退火在保护气氛中进行,退火温度为500-700℃,退火时间在30min以上。
本发明采用了第二种技术方案,(100)晶向金刚石n沟道结型场效应晶体管,采用上述制备方法制得,包括设有两个沟道的n型金刚石层,n型金刚石层的表面沿水平方向依次设置有源极、n-p结和漏极,在n-p结的上方设置有栅极,源极、漏极与n型金刚石层之间均设置有欧姆电极,欧姆电极即为高导电表面。
本发明的有益效果是:采用n型金刚石作为晶体管的沟道,其电子迁移率比p沟道晶体管的空穴迁移率快,能够有效提高金刚石场效应晶体管的频率特性。此外,引入了n型金刚石薄层高导电表面层,从而降低了金属和n型金刚石接触的比接触电阻率,极大地提高了电极欧姆接触特性,解决了现有技术中n型金刚石欧姆接触特性差的问题。
【附图说明】
图1是本发明中(100)晶向金刚石n沟道结型场效应晶体管的结构示意图;
图2是本发明中步骤二金属掩摸刻蚀凹槽后的侧面示意图;
图3是本发明中步骤三n型金刚石薄层外延后的侧面示意图;
图4是本发明中步骤四去除掩膜和退火完的侧面示意图;
图5是本发明中步骤五制备完栅极、源极和电介质掩膜的侧面示意图;
图6是本发明中步骤六p型层外延和处理后的侧面示意图。
其中,1.本征单晶金刚石衬底;2.n型金刚石层;3.金属掩膜;4.n型金刚石薄层;5.高导电表面;6.源极;7.漏极;8.电介质掩膜;9.p型金刚石层;10.栅极。
【具体实施方式】
下面结合附图和具体实施方式对本发明进行详细说明。
本发明提供了一种(100)晶向金刚石n沟道结型场效应晶体管的制备方法,包含以下步骤:
步骤一、采用微波等离子体化学气相沉积方法在(100)晶向本征单晶金刚石衬底1上生长一层n型金刚石层2,经过研磨抛光处理,使其表面粗糙度小于2nm;
步骤二、在n型金刚石层2表面制备金属掩膜3,利用刻蚀技术在n型金刚石层2中刻蚀出两个凹槽;
步骤三、采用微波等离子体化学气相沉积方法在凹槽表面生长一层n型金刚石薄层4;
步骤四、采用硫酸和硝酸1:1混合液在超过200℃条件下加热样品,去除金属掩膜3,并将n型金刚石薄层4表面氢终端氧化成氧终端,然后在900℃以上退火5min以上得到使n型金刚石薄层4表面转变成高导电表面5;
步骤五、在凹槽内高导电表面5上制备源极6和漏极7,并在表面淀积一层电介质掩膜8,只暴露出源极6、漏极7以及栅极区域的n型金刚石层2部分;
步骤六、采用微波等离子体化学气相沉积方法,在暴露出来的栅极区域的n型金刚石层2上生长一层p型金刚石层9,然后采用紫外臭氧出理将表面氢终端氧化成氧终端;
步骤七、在p型金刚石层9上制备栅极10,并通过退火形成欧姆接触。
本征单晶金刚石衬底1可以是高温高压合成衬底,也可以是CVD合成衬底,还可以是自支撑金刚石薄膜,取向均为(100)方向。本征单晶金刚石衬底1的形状为矩形、圆形、椭圆形或者其他形状。
n型金刚石层2为磷掺杂,通过微波等离子体化学气相沉积技术外延获得,掺杂浓度大于等于1016cm-3。n型金刚石层2的初始生长厚度要求大于20μm,经过研磨抛光处理后,厚度减为1-10μm,表面粗糙度小于2nm。
为了改善器件沟道的电场分布,将源极6和漏极7设置到n型金刚石层2的内部,因此需要在n型金刚石层2中刻蚀出凹槽。凹槽的深度为0.5-9.8μm,并且一般小于n型金刚石层2的厚度。
n型金刚石薄层4为磷掺杂,通过微波等离子体化学气相沉积外延技术获得,生长厚度为10-100nm。为了实现低的欧姆接触电阻率,要求其生长气氛中磷/碳比例大于0.01%,从而使表面在高温下能够重构成高导电表面5。n型金刚石薄层4生长结束后,采用硫酸/硝酸1:1比例混合250℃下加热1h以上,既能将表面氢终端氧化成氧终端,又能去除金属掩膜3。高导电表面5是在高温下磷原子诱导表面重构形成的,包含sp2碳碳键和sp3碳碳键成分,其退火温度要求在900℃以上,退火时间在5min以上。退火可以在真空中进行,也可以在保护气氛或者空气中进行。
源极6和漏极7通过标准的光刻、薄膜电极和剥离工艺获得,为了在后续p型金刚石层9生长过程中保持稳定,要求其所用金属材料熔点高,并且不具备催化其他碳产物的能力。
在p型金刚石层9生长之前,需要对器件进行隔离,因此在表面淀积一层电介质掩膜8,只需要暴露出源极6、漏极8和栅极区域的n型金刚石层2。
p型金刚石层9为硼掺杂,通过微波等离子体化学气相沉积技术外延生长实现。掺杂浓度要求大于等于1018cm-3,以实现良好的沟道控制能力,其厚度为100-500nm。生长结束后,采用紫外臭氧处理将其表面氢终端氧化成氧终端。
为了使栅极10与p型金刚石层9形成良好的欧姆接触,其所用材料为钛、钨等能够与金刚石形成碳化物的金属,并且通过退火实现界面的变化来降低比接触电阻率。退火在保护气氛或者真空环境下进行,退火温度为500-700℃,退火时间为30min以上。
本发明还提供了一种(100)晶向金刚石n沟道结型场效应晶体管,采用上述制备方法制得,包括设有两个沟道的n型金刚石层2,所述n型金刚石层2的表面沿水平方向依次设置有源极6、n-p结和漏极7,在所述n-p结的上方设置有栅极10,所述源极6、漏极7与所述n型金刚石层2之间均设置有欧姆电极,所述欧姆电极即为高导电表面5。
实施例1
如图1,(100)晶向n型金刚石结型场效应晶体管,本征单晶金刚石衬底1为高温高压合成单晶金刚石,尺寸为3×3×0.3mm3。采用微波等离子体化学气相沉积方法在该衬底表面外延生长20μm厚的n型金刚石层2,生长条件为:气压100Torr,气体流量为500sccm,CH4/H2=0.05%,PH3/CH4=2000ppm,衬底温度为950℃,掺杂浓度为1017cm-3。生长结束后,利用研磨抛光机将n型金刚石层2减薄至2μm,表面粗糙度为1nm。
通过光刻、磁控溅射和剥离工艺,在n型金刚石层2上制备200nm的钛金属掩膜3,然后采用感应耦合等离子体刻蚀技术刻蚀出1.5μm深的凹槽,如图2所示。
刻蚀结束后,采用微波等离子体化学气相沉积技术在凹槽内生长一层n型金刚石薄层4,如图3所示。其生长条件为:气压100Torr,气体流量为500sccm,CH4/H2=0.05%,PH3/CH4=50000ppm,衬底温度为900℃,生长厚度为10nm。生长结束后,将样品放入硫酸和硝酸1:1混合液中,250℃下加热1h,将表面氢终端转变成氧终端和去除钛金属掩膜3,然后在真空条件下1000℃退火10min,将n型金刚石薄层4表面转变成高导电表面5,如图4所示。
再次利用光刻、磁控溅射和剥离工艺,在样品表面制备源极6、漏极7和氮化硅电介质掩膜8,如图5所示。源极6和漏极7所用金属为钨,厚度为100nm,氮化硅厚度为50nm。
采用微波等离子体化学气相沉积方法,在未被氮化硅覆盖的栅极区域生长一层100nm的p型金刚石层9,并对样品进行紫外臭氧处理,将表面氢终端转变成氧终端,如图6所示。p型金刚石层9的生长条件为:气压80Torr,气体流量为500sccm,CH4/H2=0.01%,TMB/CH4=10000ppm,衬底温度为900℃,最终得到的掺杂浓度为1019cm-3。
最后,通过光刻、磁控溅射和剥离工艺,在p型金刚石层9表面制备Ti电极作为栅极10,在氩气环境中500℃下退火30min得到良好的欧姆接触。
实施例2
如图1,(100)晶向n型金刚石结型场效应晶体管,本征单晶金刚石衬底1为高温高压合成单晶金刚石,尺寸为3×3×0.3mm3。采用微波等离子体化学气相沉积方法在该衬底表面外延生长20μm厚的n型金刚石层2,生长条件为:气压100Torr,气体流量为500sccm,CH4/H2=0.005%,PH3/CH4=2000ppm,衬底温度为950℃,掺杂浓度为1016cm-3。生长结束后,利用研磨抛光机将n型金刚石层2减薄至5μm,表面粗糙度为1nm。
通过光刻、磁控溅射和剥离工艺,在n型金刚石层2上制备500nm的钛金属掩膜3,然后采用感应耦合等离子体刻蚀技术刻蚀出4μm深的凹槽,如图2所示。
刻蚀结束后,采用微波等离子体化学气相沉积技术在凹槽内生长一层n型金刚石薄层4,如图3所示。其生长条件为:气压100Torr,气体流量为500sccm,CH4/H2=0.05%,PH3/CH4=100000ppm,衬底温度为900℃,生长厚度为50nm。生长结束后,将样品放入硫酸和硝酸1:1混合液中,250℃下加热1h,将表面氢终端转变成氧终端和去除钛金属掩膜3,然后在真空条件下900℃退火20min,将n型金刚石薄层4表面转变成高导电表面5,如图4所示。
再次利用光刻、磁控溅射和剥离工艺,在样品表面制备源极6、漏极7和氮化硅电介质掩膜8,如图5所示。源极6和漏极7所用金属为钨,厚度为100nm,氮化硅厚度为50nm。
采用微波等离子体化学气相沉积方法,在未被氮化硅覆盖的栅极区域生长一层200nm的p型金刚石层9,并对样品进行紫外臭氧处理,将表面氢终端转变成氧终端,如图6所示。p型金刚石层9的生长条件为:气压80Torr,气体流量为500sccm,CH4/H2=0.01%,TMB/CH4=10000ppm,衬底温度为900℃,最终得到的掺杂浓度为1019cm-3。
最后,通过光刻、磁控溅射和剥离工艺,在p型金刚石层9表面制备Ti电极作为栅极10,在氩气环境中600℃下退火30min得到良好的欧姆接触。
实施例3
如图1,(100)晶向n型金刚石结型场效应晶体管,本征单晶金刚石衬底1为高温高压合成单晶金刚石,尺寸为3×3×0.3mm3。采用微波等离子体化学气相沉积方法在该衬底表面外延生长20μm厚的n型金刚石层2,生长条件为:气压100Torr,气体流量为500sccm,CH4/H2=0.005%,PH3/CH4=50000ppm,衬底温度为950℃,掺杂浓度为1018cm-3。生长结束后,利用研磨抛光机将n型金刚石层2减薄至10μm,表面粗糙度为2nm。
通过光刻、磁控溅射和剥离工艺,在n型金刚石层2上制备500nm的钛金属掩膜3,然后采用感应耦合等离子体刻蚀技术刻蚀出9.8μm深的凹槽,如图2所示。
刻蚀结束后,采用微波等离子体化学气相沉积技术在凹槽内生长一层n型金刚石薄层4,如图3所示。其生长条件为:气压100Torr,气体流量为500sccm,CH4/H2=0.05%,PH3/CH4=200000ppm,衬底温度为900℃,生长厚度为100nm。生长结束后,将样品放入硫酸和硝酸1:1混合液中,250℃下加热1h,将表面氢终端转变成氧终端和去除钛金属掩膜3,然后在真空条件下1100℃退火5min,将n型金刚石薄层4表面转变成高导电表面5,如图4所示。
再次利用光刻、磁控溅射和剥离工艺,在样品表面制备源极6、漏极7和氮化硅电介质掩膜8,如图5所示。源极6和漏极7所用金属为钨,厚度为100nm,氮化硅厚度为50nm。
采用微波等离子体化学气相沉积方法,在未被氮化硅覆盖的栅极区域生长一层200nm的p型金刚石层9,并对样品进行紫外臭氧处理,将表面氢终端转变成氧终端,如图6所示。p型金刚石层9的生长条件为:气压80Torr,气体流量为500sccm,CH4/H2=0.01%,TMB/CH4=100000ppm,衬底温度为900℃,最终得到的掺杂浓度为1020cm-3。
最后,通过光刻、磁控溅射和剥离工艺,在p型金刚石层9表面制备Ti电极作为栅极10,在氩气环境中700℃下退火30min得到良好的欧姆接触。
金刚石场效应晶体管有金属-氧化物-半导体场效应和结型场效应晶体管两种。由于金刚石n型掺杂并不成熟,因此金刚石场效应晶体管主要以p沟道为主。对金刚石材料而言,电子迁移率为4200cm2/Vs,空穴迁移率为3800cm2/Vs,因此采用n沟道制备金刚石场效应晶体管可以提高器件的输出电流和频率特性。本发明引入了n型金刚石层高导电表面层,高导电表面与金属电极接触自然就形成了欧姆接触,从而降低了金属和n型金刚石接触的比接触电阻率,极大地提高了电极欧姆接触特性,解决了现有技术中n型金刚石欧姆接触特性差的问题。解决了n型金刚石欧姆接触特性差的问题之后,本发明即可采用n型金刚石作为晶体管的沟道,其电子迁移率比p沟道晶体管的空穴迁移率快,能够有效提高金刚石场效应晶体管的频率特性。
Claims (10)
1.(100)晶向金刚石n沟道结型场效应晶体管的制备方法,其特征在于,包括以下步骤:
步骤一、采用微波等离子体化学气相沉积方法在(100)晶向本征单晶金刚石衬底1上生长一层n型金刚石层(2);
步骤二、在n型金刚石层(2)的表面制备金属掩膜(3),利用刻蚀技术在n型金刚石层(2)中刻蚀出两个凹槽;
步骤三、采用微波等离子体化学气相沉积方法在两个所述凹槽的内表面均生长一层n型金刚石薄层(4),得到样品A;
步骤四、采用硫酸和硝酸体积比1:1混合液超过200℃条件下加热所述样品A,去除金属掩膜(3),同时使得n型金刚石薄层(4)的表面氢终端氧化成氧终端,然后在900℃以上退火5min以上得到使n型金刚石薄层(4)表面转变成高导电表面(5);
步骤五、在一个所述高导电表面(5)上制备源极(6),在另一个所述高导电表面(5)上制备漏极(7),在n型金刚石层(2)的上表面淀积一层电介质掩膜(8),所述待淀积电介质掩膜(8)的上表面不包含源极(6)的顶面、漏极(7)的顶面、以及n型金刚石层(2)上待生长栅极(10)的顶面;
步骤六、采用微波等离子体化学气相沉积方法,在n型金刚石层(2)上待生长栅极的顶面上生长一层p型金刚石层(9),然后采用紫外臭氧处理将表面氢终端氧化成氧终端;
步骤七、在p型金刚石层(9)上制备栅极(10),并通过退火形成欧姆接触。
2.如权利要求1所述的制备方法,其特征在于,所述n型金刚石层(2),为磷掺杂层,掺杂浓度大于等于1016cm-3,研磨抛光处理后的厚度为1-10μm,表面粗糙度小于2nm。
3.如权利要求1或2所述的制备方法,其特征在于,所述步骤三中,所述n型金刚石薄层(4)由微波等离子体化学气相沉积技术外延而得,生长气氛中磷/碳体积比大于0.01%,厚度为10-100nm。
4.如权利要求3所述的制备方法,其特征在于,本征单晶金刚石衬底(1)为高温高压合成衬底、CVD合成衬底或自支撑金刚石薄膜。
5.如权利要求3所述的制备方法,其特征在于,所述步骤二中,金属掩膜(3)为能溶于硫酸和硝酸混合液的材料。
6.如权利要求3所述的制备方法,其特征在于,所述步骤二中,刻蚀方法为反应离子刻蚀或者感应耦合等离子体刻蚀,所述凹槽的深度为0.5-9.8μm,凹槽深度小于n型金刚石层(2)的厚度。
7.如权利要求3所述的制备方法,其特征在于,所述步骤五中,所述源极(6)和漏极(7)为高熔点金属。
8.如权利要求3所述的制备方法,其特征在于,所述步骤六中,所述p型金刚石层(9)为硼掺杂层,掺杂浓度≥1018cm-3,厚度为100-500nm。
9.如权利要求3所述的制备方法,其特征在于,所述步骤七中,栅极(10)为能与金刚石形成碳化物的金属,退火在保护气氛中进行,退火温度为500-700℃,退火时间在30min以上。
10.(100)晶向金刚石n沟道结型场效应晶体管,其特征在于,采用所述权利要求1-9中任意一种制备方法制得,包括设有两个沟道的n型金刚石层(2),所述n型金刚石层(2)的表面沿水平方向依次设置有源极(6)、n-p结和漏极(7),在所述n-p结的上方设置有栅极(10),所述源极(6)、漏极(7)与所述n型金刚石层(2)之间均设置有欧姆电极,所述欧姆电极即为高导电表面(5)。
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