CN110460330A - A kind of packaging technology and frequency source of frequency source - Google Patents
A kind of packaging technology and frequency source of frequency source Download PDFInfo
- Publication number
- CN110460330A CN110460330A CN201910770103.9A CN201910770103A CN110460330A CN 110460330 A CN110460330 A CN 110460330A CN 201910770103 A CN201910770103 A CN 201910770103A CN 110460330 A CN110460330 A CN 110460330A
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- soldered
- frequency source
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- 238000012536 packaging technology Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 112
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 230000005496 eutectics Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000003466 welding Methods 0.000 claims description 16
- 229910007116 SnPb Inorganic materials 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 238000010992 reflux Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 42
- 239000000919 ceramic Substances 0.000 description 17
- 239000000306 component Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000003475 lamination Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The packaging technology and frequency source of a kind of frequency source are provided in the embodiment of the present application, the encapsulation of frequency source is realized using three-dimensional stacked mode, so that the volume and weight of frequency source has obtained very big reduction, can reduce 80% on the basis of original assembly volume.
Description
Technical field
This application involves frequency source manufacturing technology field more particularly to the packaging technologies and frequency source of a kind of frequency source.
Background technique
Enemy and we's identification is one of the important means of Modern Information battlefield military confrontation, and secondary radar is identified as enemy and we is
The hardcore equipment of system, its superiority and inferiority directly influence the performance of identifying system.As the core component of radar, frequency source master
It is used to provide rf excitation signal to radar transmitter, provides a variety of local oscillators with echo-signal down coversion to radar receiver
Signal provides base reference signal for signal processing system.Heart of the frequency source as radar system, phase noise, frequency hopping
The indexs such as time, spurious reduction have an important influence radar system.
During realizing the application, inventors have found that existing miniaturization frequency source component be mostly simple function and
Narrow frequency range uses, and in multi-functional, wide-band technology, the volume of frequency source component is larger, especially in high frequencies such as millimeter waves
In product, it is essentially still at module level, is unfavorable for miniaturization.
Summary of the invention
The packaging technology and frequency source of a kind of frequency source are provided in the embodiment of the present application, for solving above-mentioned at least one
Problem.
According to the first aspect of the embodiment of the present application, a kind of packaging technology of frequency source is provided, comprising: by amplifier
On chip, power splitter chip, the welding of frequency divider chip eutectic and three-dimensional gold wire bonding to underlying substrate；By the underlying substrate bottom
It is sintered with cavity, and loop filter is sintered on the underlying substrate；It is at least two ball heights are identical and disperse each other
Ground is soldered on the underlying substrate；Input power and isolated input are sintered with the gold-plated hole in cavity side, and welded
To the underlying substrate；The reflux of phase-locked loop chip, voltage controlled oscillator, temperature compensating crystal oscillator and resistance capacitor device is soldered to top substrate layer,
Filter chip is bonded again and gold wire bonding is to the top substrate layer；Top substrate layer alignment is placed in the weldering of the underlying substrate
On ball, and the soldered ball and the top substrate layer are weldingly connected；The input of three line traffic controls and RF output are sintered with gold-plated hole, and welded
To the top substrate layer；Carrying out contraposition stacking to the underlying substrate and the top substrate layer keeps the top substrate layer and the underlying substrate electrical
Interconnection.
According to the second aspect of the embodiment of the present application, a kind of frequency source is provided, comprising: cavity；Underlying substrate, sintering
In the cavity bottom, amplifier chip, power splitter chip, frequency divider chip eutectic and gold wire bonding to the underlying substrate；Loop
Filter is soldered to the underlying substrate；At least two soldered balls, at least two ball height is identical and is dispersedly soldered to each other
On the underlying substrate；Top substrate layer is aligned with the underlying substrate edge and is placed in the cavity, and by be soldered to this at least two
A soldered ball and the underlying substrate are electrically connected；Phase-locked loop chip, voltage controlled oscillator, temperature compensating crystal oscillator and resistance capacitor device welding
To the top substrate layer；Filter chip by being bonded to the top substrate layer, and with the top substrate layer gold wire bonding；The cavity side
Offer gold-plated hole；Input power is respectively sintered with corresponding gold-plated hole with isolated input and is soldered to the underlying substrate；Three lines
Control input and RF output are respectively sintered with corresponding gold-plated hole, and are soldered to the top substrate layer.
Using the packaging technology and frequency source of the frequency source provided in the embodiment of the present application, can greatly reduce small product size and
Weight meets miniaturization, the lightweight demand of component and module, it is easy to accomplish sip encapsulation.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows a kind of circuit connection schematic diagram of frequency source according to the embodiment of the present application；
Fig. 2 shows the diagrammatic cross-sections of the frequency source encapsulated using the packaging technology in the embodiment of the present application.
Specific embodiment
During realizing the application, inventors have found that existing miniaturization frequency source component be mostly simple function and
Narrow frequency range uses, and done in multi-functional, component in wide-band technology volume it is not small, especially in the high frequencies product such as millimeter wave
In, substantially module level is unfavorable for miniaturization, although what is had realizes miniaturization, function and frequency range use have office
It is sex-limited.For example, mainly elaborating a kind of conventional number in patent " a kind of miniaturization high-air-tightness frequency source and its packaging method "
Word frequency source is usually made of phaselocked loop (PLL) chip, loop low pass wave circuit, voltage controlled oscillator (VCO), using
Plane assembling mode it is clear to realize that function is not set out, and its functional requirement is lower although close on volume size.This
Scheme uses 3-D stacks assembling mode, greatly reduces volume, and perfect in shape and function, is suitable for multiband, multi-field.
To solve the above problems, providing the packaging technology and frequency source of a kind of frequency source in the embodiment of the present application, pass through
The three-dimensional stacked technology of frequency source internal circuit is to realize the design of miniaturization, in early period packaging technology, by realize cavity with
Ceramic thin film substrates, the multiple eutectic of GaN chip, bonding interconnection process, in conjunction with contraposition Stack Technology, by internal phase discriminator
A variety of polymorphic type devices such as chip, VCO chip, amplifier chip, switch filtering chip realize frequency source by High Density Integration
High RST quality, broadband output；80% is reduced on original volume basis, black box size can reach 8mm*8mm*
3mm。
It is three-dimensional stacked to refer to chip in Z-direction perpendicular interconnection, mainly there are three-dimensional stacked encapsulation, chip-stack 3D between lamination IC
Encapsulation, wafer lamination 3D encapsulation.Using three-dimensional stacked and chip stack package between lamination IC in the embodiment of the present application, including
The periphery interconnection (stacked tape carrier technique, welding edge conduction band technique, cube face interconnection line substrate process) of lamination IC is folded
Layer MCM regional interconnection (welding laminated process including flip-chip welding laminated chips technique, flip-chip) is folded with being bonded
Layer chip technology is (including melting bonding, adhesive bonding, metal-metal thermocompression bonding, gold/copper bonding, solder bump
Or au bump etc.).
Its volume weight of the frequency source realized using three-dimensional stacked mode has obtained very big reduction, in original assembly volume base
80% can be reduced on plinth.
It is flat to can be applied to the Digital Phased Array platform, comprehensive integrated platform, unmanned plane for scheme in the embodiment of the present application
The fields such as platform and satellite communication.
In order to which technical solution in the embodiment of the present application and advantage is more clearly understood, below in conjunction with attached drawing to the application
Exemplary embodiment be described in more detail, it is clear that described embodiment be only the application a part implement
Example, rather than the exhaustion of all embodiments.It should be noted that in the absence of conflict, embodiment and reality in the application
The feature applied in example can be combined with each other.
Fig. 1 shows a kind of circuit connection schematic diagram of frequency source according to the embodiment of the present application.
As shown in Figure 1, frequency source is by temperature compensating crystal oscillator, phase-locked loop chip, linear voltage-stabilizing circuit, loop filter, voltage-controlled vibration
Swing the composition such as device chip, power splitter chip, frequency divider chip, amplifier chip and filter chip.Temperature compensating crystal oscillator is for providing
The reference clock of high stability, phase noise；+ 3.3V needed for+5V input power is converted to phaselocked loop by linear voltage-stabilizing circuit；
Reference clock and voltage controlled oscillator output signal are carried out frequency dividing phase demodulation by phase-locked loop chip, and the DC voltage of generation is through loop filtering
Device controls VCO output frequency；VCO output signal is divided simultaneously, amplifies and exports after filtering.
It should be appreciated that the merely illustrative purpose of frequency source shown in figure 1 and show, the frequency source in the embodiment of the present application
Packaging technology can also be applied to other modes connection frequency source, the application to this with no restriction.
Fig. 2 shows the diagrammatic cross-sections of the frequency source encapsulated using the packaging technology in the embodiment of the present application.Such as Fig. 2 institute
Show, the frequency source using the packaging technology encapsulation in the embodiment of the present application includes:
Cavity；Underlying substrate, is sintered in the cavity bottom, amplifier chip, power splitter chip, frequency divider chip eutectic and
Gold wire bonding is to the underlying substrate；Loop filter is soldered to the underlying substrate；At least two soldered balls, at least two soldered ball are high
It spends identical and is dispersedly soldered on the underlying substrate each other；Top substrate layer is aligned with the underlying substrate edge and is placed on the chamber
In body, and it is electrically connected by being soldered at least two soldered ball and the underlying substrate；Phase-locked loop chip, voltage controlled oscillator, temperature
It mends crystal oscillator and resistance capacitor device is soldered to the top substrate layer；Filter chip by being bonded to the top substrate layer, and on this
Laminar substrate gold wire bonding；The cavity side offers gold-plated hole；Input power is respectively burnt with corresponding gold-plated hole with isolated input
It ties and is soldered to the underlying substrate；Three line traffic controls input and RF (Radio Frequency, radio frequency) output respectively with it is corresponding gold-plated
Hole sintering, and it is soldered to the top substrate layer.
In the specific implementation, which can be lower layer's single-layer ceramic substrate.It is more that the top substrate layer can be upper layer
Layer ceramic substrate.
According to the packaging technology of the frequency source of the embodiment of the present application, comprising:
Step 1, by amplifier chip, power splitter chip, the welding of frequency divider chip eutectic and three-dimensional gold wire bonding to lower layer
On substrate.
In the specific implementation, the substrate of the frequency source in the embodiment of the present application can use ceramic substrate.
In the specific implementation, in the assembling process of frequency source, to amplifier chip, power splitter chip, frequency divider chip
The common solder of eutectic has golden tin (AuSn), gold germanium (AuGe), three kinds of gold silicon (AuSi), and eutectic temperature and mechanical performance are shown in Table
1。
1 conventional chip eutectic solder characteristic of table
| Solder | Eutectic temperature/DEG C | Thermal conductivity/W (m.k) -1 | Resistivity/× 10-6 Ω | Shear strength/MPa |
| AuSn | 280 | 251 | 35.9 | 185 |
| AuGe | 356 | 232 | 28.7 | 220 |
| AuSi | 370 | 293 | 77.5 | 142 |
Firstly the need of considering the problems of when the resistance to extreme temperature of chip and the melting temperature of eutectic solder are chip eutectics.Welding
When welding temperature be generally higher than 20 DEG C of solder melt point temperature or so, just can guarantee that solder sufficiently melts or present liquid phase.
Gallium nitride GnN material bare chip can be used in the embodiment of the present application, by tri- kinds of AuGe, AuSi and AuSn
The comparison of the liquidus point, thermal conductivity, resistivity and shear strength of solder selects AuSn solder to carry out eutectic to GaN chip,
As shown in Fig. 2, in the miniaturization frequency source, directly by amplifier chip, power splitter chip, frequency dividing on lower layer's ceramic substrate
Device chip is completed using AuSn solder sheet eutectic, carries out three-dimensional gold wire bonding to chip after the completion, and spun gold specification is 25 μm.
Step 2, the underlying substrate bottom and cavity are sintered, and loop filter is sintered on the underlying substrate.
In the specific implementation, the SnAgCu solder of low level-one gradient can be used between lower layer's ceramic substrate and cavity
Piece (217 DEG C of melting temperature), by the analysis of ceramic substrate and cavity eutectic temperature curve process parameter, using suitable temperature
It carries out substrate and cavity is sintered；Loop filter is sintered on lower layer's ceramic substrate using SnPb solder sheet.
Step 3, at least two ball heights are identical and be dispersedly soldered on the underlying substrate each other.
In the specific implementation, the BGA soldered ball that specification is 0.5mm can be welded using SnPb soldering paste and lower layer's ceramic substrate
It connects.
Step 4, input power and isolated input are sintered with the gold-plated hole in cavity side, and are soldered to the lower layer
Substrate.
In the specific implementation ,+5V and LD isolated input and the gold-plated hole in cavity side can be carried out using SnPb soldering paste
Sintering, and be welded on lower layer's ceramic substrate, make insulator and ceramic substrate keep being electrically connected.
Step 5, the reflux of phase-locked loop chip, voltage controlled oscillator, temperature compensating crystal oscillator and resistance capacitor device is soldered to upper layer base
Plate, then by filter chip bonding and gold wire bonding is to the top substrate layer.
It in the specific implementation, can be first by packaging phase-locked loop chip, voltage controlled oscillator, temperature compensating crystal oscillator, other resistance
Capacitor element carries out reflux using SnPb soldering paste and is soldered on substrate；Again on substrate by filter chip using H20E conducting resinl into
120 DEG C of row solidifications, form good temperature gradient, will carry out carrying out gold wire bonding, gold with side circuit after the completion of die bonding
Silk uses 25 μm of specifications.
Step 6, top substrate layer alignment is placed on the soldered ball of the underlying substrate, and by the soldered ball and the top substrate layer
It is weldingly connected.
In the specific implementation, upper layer ceramic substrate can be placed in the lower circuit structure prepared, is used
BGA soldered ball and upper layer ceramic substrate are weldingly connected by 138 DEG C of low temperature SnBi solders, form the circuit connection of middle layer.
Step 7, the input of three line traffic controls and RF output are sintered with gold-plated hole, and are soldered to the top substrate layer.
It in the specific implementation, can be exhausted using different model by the input of three line traffic controls of upper layer ceramic substrate, RF output etc.
Edge is used using the sintering of SnPb soldering paste in the gold-plated hole of cavity upper side with upper layer ceramic substrate imput output circuit
The welding of SnPb solder, forms electrical connection.
Step 8, carrying out contraposition stacking to the underlying substrate and the top substrate layer makes the top substrate layer and underlying substrate electricity
Gas interconnection.
In the specific implementation, ball technique can be planted using BGA to carry out the bottom and upper layer ceramic substrate circuit completed
Contraposition stacks, and two-layer substrate is carried out electric interconnection using ball equipment is planted, BGA soldered ball can use tin ball, and effect includes electricity
Gas connection, grounding connection, support connection, Fig. 2 are shown as BGA effect picture, and actually BGA soldered ball quantity can increase with circuit layout
Add.
In the specific implementation, the right hair of frequency source component external I/O connection uses the sub- vacuum welding mode of side insulation, guarantees
Air-tightness, and insulator is connect with upper and lower level ceramic substrate circuit board, is realized the transfer function of direct current supply and signal, is also facilitated
The realization that entire frequency source component welds on other circuits.
In the specific implementation, it can further include according to the packaging technology of the embodiment of the present application to assembled multilayer
Circuit test/debug, and is covered using Laser seal welding technique to the three-dimensional stacked frequency source, realizes good sealing
Property.
Using the packaging technology and frequency source of the frequency source provided in the embodiment of the present application, which makes frequency source group
The use scope of part is wider, and volume is smaller；So that frequency source can be used as the synthesis radio frequency of the multiple frequency ranges of general purpose module, module application
In product；The use of the technique can greatly reduce small product size and weight, meet miniaturization, the lightweight of component and module
Demand, it is easy to accomplish sip encapsulation；More previous multi-functional, the broadband frequency source of the frequency source theory structure is more simple, spuious
It is lower, power consumption is lower, cost is lower, is easy to reprocess and safeguard；Green welding mode is used in three-dimensional stacked encapsulation process,
Flux-free pollutant ensure that component global reliability；It can be realized miniaturization volume, and can be easy to according to product demand
Realize the overlapping development of the stacking technique.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the application range.
Obviously, those skilled in the art can carry out various modification and variations without departing from the essence of the application to the application
Mind and range.In this way, if these modifications and variations of the application belong to the range of the claim of this application and its equivalent technologies
Within, then the application is also intended to include these modifications and variations.
Claims (10)
1. a kind of packaging technology of frequency source characterized by comprising
It will be on amplifier chip, power splitter chip, the welding of frequency divider chip eutectic and three-dimensional gold wire bonding to underlying substrate；
The underlying substrate bottom and cavity are sintered, and loop filter is sintered on the underlying substrate；
It is at least two ball heights are identical and be dispersedly soldered on the underlying substrate each other；
Input power and isolated input are sintered with the gold-plated hole in cavity side, and are soldered to the underlying substrate；
The reflux of phase-locked loop chip, voltage controlled oscillator, temperature compensating crystal oscillator and resistance capacitor device is soldered to top substrate layer, then will filtering
Device die bonding and gold wire bonding are to the top substrate layer；
Top substrate layer alignment is placed on the soldered ball of the underlying substrate, and the soldered ball and the top substrate layer are welded
It connects connected；
The input of three line traffic controls and RF output are sintered with gold-plated hole, and are soldered to the top substrate layer；
Carrying out contraposition stacking to the underlying substrate and the top substrate layer keeps the top substrate layer and the underlying substrate electrical
Interconnection.
2. the packaging technology of frequency source according to claim 1, which is characterized in that the amplifier chip, power splitter core
Piece, frequency divider chip are using golden tin AuSn solder eutectic.
3. the packaging technology of frequency source according to claim 1, which is characterized in that adopted with cavity the underlying substrate bottom
It is sintered with SnAgCu solder piece.
4. the packaging technology of frequency source according to claim 1, which is characterized in that the soldered ball is BGA soldered ball, the weldering
Gauge ball lattice are 0.5 millimeter of diameter；The spun gold specification that the solid gold wire bonding uses is 25 μm.
5. the packaging technology of frequency source according to claim 1, which is characterized in that the filter chip passes through conducting resinl
It is bonded to the top substrate layer.
6. the packaging technology of frequency source according to claim 1, which is characterized in that the soldered ball passes through SnPb soldering paste and institute
Underlying substrate welding is stated, the loop filter is sintered on the underlying substrate using SnPb solder sheet；The input power
It is sintered with isolated input and the gold-plated hole in cavity side using SnPb soldering paste；The phase-locked loop chip, voltage controlled oscillator, temperature
It mends crystal oscillator and resistance capacitor device is soldered in top substrate layer by SnPb solder paste reflow；The three line traffic controls input and RF output
It is sintered with gold-plated hole using SnPb soldering paste.
7. the packaging technology of frequency source according to claim 1, which is characterized in that the soldered ball is adopted with the top substrate layer
It is weldingly connected with 138 DEG C of low temperature SnBi solders.
8. the packaging technology of frequency source according to claim 1, which is characterized in that plant ball technique under described using BGA
Laminar substrate and the top substrate layer carry out contraposition stacking.
9. the packaging technology of frequency source according to claim 1, which is characterized in that further include:
The cavity is covered using Laser seal welding technique.
10. a kind of frequency source characterized by comprising
Cavity；
Underlying substrate is sintered in the cavity bottom, amplifier chip, power splitter chip, frequency divider chip eutectic and spun gold key
It is bonded to the underlying substrate；Loop filter is soldered to the underlying substrate；
At least two soldered balls, at least two ball height is identical and is dispersedly soldered on the underlying substrate each other；
Top substrate layer is aligned placement with the underlying substrate edge in the cavity, and by being soldered to described at least two
Soldered ball and the underlying substrate are electrically connected；Phase-locked loop chip, voltage controlled oscillator, temperature compensating crystal oscillator and resistance capacitor device welding
To the top substrate layer；Filter chip by being bonded to the top substrate layer, and with the top substrate layer gold wire bonding；
The cavity side offers gold-plated hole；Input power is respectively sintered and is soldered to corresponding gold-plated hole with isolated input
The underlying substrate；The input of three line traffic controls and RF output are respectively sintered with corresponding gold-plated hole, and are soldered to the top substrate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910770103.9A CN110460330B (en) | 2019-08-20 | 2019-08-20 | Frequency source packaging method and frequency source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910770103.9A CN110460330B (en) | 2019-08-20 | 2019-08-20 | Frequency source packaging method and frequency source |
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| CN110460330A true CN110460330A (en) | 2019-11-15 |
| CN110460330B CN110460330B (en) | 2021-03-16 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6005443A (en) * | 1998-03-19 | 1999-12-21 | Conexant Systems, Inc. | Phase locked loop frequency synthesizer for multi-band application |
| CN103795410A (en) * | 2014-01-24 | 2014-05-14 | 南京熊猫电子股份有限公司 | Broadband frequency agility frequency source based on double phase-locked loops |
| WO2017065934A1 (en) * | 2015-10-14 | 2017-04-20 | Microsoft Technology Licensing, Llc | Superconducting logic compatible phase shifter |
| CN206302392U (en) * | 2017-01-05 | 2017-07-04 | 中星联华科技（北京）有限公司 | Frequency divider and frequency generator |
-
2019
- 2019-08-20 CN CN201910770103.9A patent/CN110460330B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6005443A (en) * | 1998-03-19 | 1999-12-21 | Conexant Systems, Inc. | Phase locked loop frequency synthesizer for multi-band application |
| CN103795410A (en) * | 2014-01-24 | 2014-05-14 | 南京熊猫电子股份有限公司 | Broadband frequency agility frequency source based on double phase-locked loops |
| WO2017065934A1 (en) * | 2015-10-14 | 2017-04-20 | Microsoft Technology Licensing, Llc | Superconducting logic compatible phase shifter |
| CN206302392U (en) * | 2017-01-05 | 2017-07-04 | 中星联华科技（北京）有限公司 | Frequency divider and frequency generator |
Non-Patent Citations (2)
| Title |
|---|
| BIN WANG等: "Design of an L-band miniaturized frequency source", 《2012 INTERNATIONAL CONFERENCE ON COMPUTATIONAL PROBLEM-SOLVING》 * |
| 魏巍: "宽带频率源小型化及一体化封装研究", 《中国优秀硕士学位论文全文数据库-信息科技辑》 * |
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