CN210536612U - Three-dimensional stacking frequency source - Google Patents
Three-dimensional stacking frequency source Download PDFInfo
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- CN210536612U CN210536612U CN201921354147.5U CN201921354147U CN210536612U CN 210536612 U CN210536612 U CN 210536612U CN 201921354147 U CN201921354147 U CN 201921354147U CN 210536612 U CN210536612 U CN 210536612U
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Abstract
The embodiment of the application provides a three-dimensional stacked frequency source, wherein an upper ceramic substrate and a lower ceramic substrate in the frequency source are aligned at the edges and placed in the cavity, and are electrically connected with the lower ceramic substrate through at least two solder balls so as to realize three-stacked packaging. According to the scheme in the application embodiment, the frequency source is packaged in a three-dimensional stacking mode, so that the volume and the weight of the frequency source are greatly reduced, and the volume of the frequency source can be reduced by 80% on the basis of the volume of the original assembly.
Description
Technical Field
The application relates to the technical field of frequency sources, in particular to a three-dimensional stacked frequency source.
Background
The identification of friend or foe is one of the important means of modern informatization battlefield military countermeasures, the secondary radar is used as the core hardware equipment of the identification system of friend or foe, and the quality of the secondary radar directly influences the performance of the identification system. As a core component of the radar, the frequency source is mainly used for providing radio frequency excitation signals for a radar transmitter, providing a plurality of local oscillation signals for down-conversion of echo signals for a radar receiver and providing reference signals for a signal processing system. The frequency source is used as the heart of the radar system, and indexes such as phase noise, frequency hopping time, spurious suppression and the like of the frequency source have important influence on the radar system.
In the process of implementing the present application, the inventor finds that most of the existing miniaturized frequency source components are used in a single function and a narrow frequency band, and in the multifunctional and wide frequency band technology, the volume of the frequency source component is large, and especially in high frequency products such as millimeter waves and the like, the frequency source component is still at a module level basically, which is not beneficial to miniaturization development.
Disclosure of Invention
The embodiment of the application provides a three-dimensional stacked frequency source, which is used for solving at least one problem.
According to a first aspect of embodiments of the present application, there is provided a frequency source, comprising: a cavity; the lower ceramic substrate is sintered at the bottom of the cavity, and the amplifier chip, the power divider chip and the frequency divider chip are eutectic and are bonded to the lower ceramic substrate through gold wires; a loop filter soldered to the lower ceramic substrate; at least two solder balls which have the same height and are welded on the lower ceramic substrate in a mutually dispersed way; the upper ceramic substrate is aligned with the edge of the lower ceramic substrate and placed in the cavity, and is electrically connected with the lower ceramic substrate through being welded to the at least two welding balls; the phase-locked loop chip, the voltage-controlled oscillator, the temperature compensation crystal oscillator and the resistance-capacitance device are welded to the upper layer ceramic substrate; the filter chip is adhered to the upper layer ceramic substrate and is in gold wire bonding with the upper layer ceramic substrate; the side surface of the cavity is provided with a gold-plated hole; an input power supply and a gold-plated hole are sintered and welded to the lower ceramic substrate; the three-wire control input and the RF output are respectively sintered with two gold-plated holes and welded to the upper ceramic substrate.
Optionally, the amplifier chip, the power divider chip and the frequency divider chip adopt gold-tin-AuSn alloy solder eutectic.
Optionally, the solder ball is a BGA solder ball, and the solder ball is 0.5mm in diameter.
Optionally, the gold wire bonding uses a gold wire gauge of 25 μm.
Optionally, the filter chip is bonded to the upper ceramic substrate by a conductive adhesive.
Optionally, the plurality of gold-plating holes are respectively opened at the side of the cavity near the upper ceramic substrate and the lower ceramic substrate.
Optionally, an input power is sintered to the gold plated holes at a location proximate the underlying ceramic substrate.
Alternatively, three-wire control inputs and RF outputs are sintered with two gold plated holes near the upper ceramic substrate, respectively.
Optionally, the three-dimensional stacked frequency source further comprises: and the sealing cover is covered on the top of the cavity.
By adopting the three-dimensional stacking frequency source provided by the embodiment of the application, the volume and the weight of a product can be greatly reduced, the requirements of miniaturization and light weight of components and modules are met, and sip packaging is easy to realize.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 illustrates a schematic circuit diagram of a frequency source according to an embodiment of the present application;
fig. 2 shows a schematic cross-sectional view of a three-dimensional stacked frequency source used in an embodiment of the present application.
Detailed Description
In the process of implementing the present application, the inventor finds that most of the existing miniaturized frequency source components are used in a single function and a narrow frequency band, while the size of the components in the multifunctional and wide frequency band technology is not small, especially in high frequency products such as millimeter waves and the like, the components are basically in a module level, which is not beneficial to miniaturization development, and although miniaturization is achieved, the functions and the frequency band use are limited. For example, in the patent "a miniaturized high-airtightness frequency source and its packaging method", it is mainly stated that a conventional digital frequency source generally consists of a phase-locked loop (PLL) chip, a loop low-pass filter circuit, and a voltage-controlled oscillator (VCO), and it adopts a planar assembly method, although the two are similar in volume size, the implementation function is not clearly described, and the functional requirement is low. The scheme adopts a three-dimensional laminated assembly mode, greatly reduces the volume, has complete functions and is suitable for multiple frequency bands and multiple fields.
In order to solve the above problems, the embodiment of the present application provides a three-dimensional stacked frequency source, which implements a miniaturized design by a three-dimensional stacking technology of an internal circuit of the frequency source, and implements high signal quality and broadband output of the frequency source by integrating multiple types of devices such as a phase discriminator chip, a voltage-controlled oscillation VCO chip, an amplifier chip, a switch filter chip, and the like inside the frequency source at high density by implementing multiple eutectic and bonding interconnection processes between a cavity and a ceramic film substrate and a GaN chip and combining a para-position stacking technology; the size of the whole assembly can be reduced by 80% on the basis of the original volume, and the size of the whole assembly can reach 8mm by 3 mm.
Three-dimensional stacking refers to vertical interconnection of chips in the Z direction, and stacked IC three-dimensional stacking and chip stacking packaging are adopted in the embodiment of the application. The volume and weight of the frequency source realized by adopting the three-dimensional stacking mode are greatly reduced, and the volume can be reduced by 80% on the basis of the original assembly.
The scheme in the embodiment of the application can be applied to the fields of digital phased array platforms, comprehensive integrated platforms, unmanned aerial vehicle platforms, satellite communication and the like.
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following further detailed description of the exemplary embodiments of the present application with reference to the accompanying drawings makes it clear that the described embodiments are only a part of the embodiments of the present application, and are not exhaustive of all embodiments. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
Fig. 1 shows a schematic circuit diagram of a frequency source according to an embodiment of the present application.
As shown in fig. 1, the frequency source is composed of a temperature compensation crystal oscillator, a phase-locked loop chip, a linear voltage stabilizing circuit, a loop filter, a voltage controlled oscillator chip, a power divider chip, a frequency divider chip, an amplifier chip, a filter chip, and the like. The temperature compensation crystal oscillator is used for providing a reference clock with high stability and phase noise; the linear voltage stabilizing circuit converts a +5V input power supply into +3.3V required by a phase-locked loop; the phase-locked loop chip carries out frequency division and phase discrimination on the reference clock and the output signal of the voltage-controlled oscillator, and the generated direct-current voltage controls the output frequency of the VCO through a loop filter; meanwhile, the VCO output signal is output after frequency division, amplification and filtering.
It should be understood that the frequency source shown in fig. 1 is shown for exemplary purposes only, and the packaging process of the frequency source in the embodiment of the present application may also be applied to frequency sources connected in other ways, which is not limited in the present application.
Fig. 2 shows a schematic cross-sectional view of a three-dimensional stacked frequency source in an embodiment of the present application. As shown in fig. 2, the three-dimensional stacked frequency source used in the embodiment of the present application includes:
a cavity; the lower ceramic substrate 1 is sintered at the bottom of the cavity, and the amplifier chip 2, the power divider chip 3 and the frequency divider chip 4 are eutectic and bonded to the lower ceramic substrate 1 through gold wires; the loop filter 5 is soldered to the lower ceramic substrate; at least two solder balls 6 which are identical in height and are bonded to the lower ceramic substrate in a mutually dispersed manner; the upper ceramic substrate 7 is arranged in the cavity in alignment with the edge of the lower ceramic substrate and is electrically connected with the lower ceramic substrate through being welded to the at least two welding balls; the phase-locked loop chip 8, the voltage-controlled oscillator 9, the temperature compensation crystal oscillator 10 and the resistance-capacitance device 11 are welded to the upper layer ceramic substrate; the filter chip 12 is bonded to the upper ceramic substrate by bonding, and gold wire bonded to the upper ceramic substrate; the side surface of the cavity is provided with a gold-plated hole; an input power supply 15 and a gold-plated hole are sintered and welded to the lower ceramic substrate 1; three-wire control inputs 13 and RF outputs 14 are sintered with two gold plated holes, respectively, and soldered to the upper ceramic substrate 7.
In particular implementations, the underlying ceramic substrate may be a single layer ceramic substrate. The upper ceramic substrate may be a multilayer ceramic substrate.
Specifically, the amplifier chip 2, the power divider chip 3 and the frequency divider chip 4 adopt gold-tin AuSn alloy solder eutectic.
Specifically, the solder ball 6 is a BGA solder ball, and the solder ball has a diameter of 0.5 mm.
Specifically, the specification of the gold wire adopted by the gold wire bonding is 25 μm.
Specifically, the filter chip 12 is bonded to the upper ceramic substrate by conductive adhesive.
Specifically, the plurality of gold-plating holes are respectively formed in the side surface of the cavity and are respectively close to the upper-layer ceramic substrate and the lower-layer ceramic substrate.
Specifically, an input power source 15 is sintered with the gold plated holes at a position near the lower ceramic substrate.
Specifically, the three-wire control input 13 and the RF output 14 are sintered with two gold-plated holes near the upper ceramic substrate, respectively.
Specifically, the three-dimensional stacked frequency source further includes: and the sealing cover is covered on the top of the cavity.
In specific implementation, the three-dimensional stacked frequency source of the embodiment of the present application can be packaged by the following processes:
step 1, eutectic welding and three-dimensional gold wire bonding are carried out on the amplifier chip, the power divider chip and the frequency divider chip to the lower layer ceramic substrate.
In the specific implementation, in the assembly process of the frequency source, three types of commonly used solders for eutectic of the amplifier chip, the power divider chip and the frequency divider chip are gold tin (AuSn), gold germanium (AuGe) and gold silicon (AuSi), and the eutectic temperature and the mechanical property of the three types of solders are shown in table 1.
TABLE 1 eutectic solder characteristics of commonly used chips
| Solder | Eutectic temperature/. degree.C | Thermal conductivity/W (m.k) -1 | Resistivity/. times.10-6 omega | Shear strength/MPa |
| AuSn | 280 | 251 | 35.9 | 185 |
| AuGe | 356 | 232 | 28.7 | 220 |
| AuSi | 370 | 293 | 77.5 | 142 |
The temperature resistance limit of the chip and the melting point temperature of the eutectic solder are the first problems to be considered when the chip is eutectic. When in welding, the welding temperature is generally about 20 ℃ higher than the melting point temperature of the solder, so that the solder can be ensured to be fully melted or to be in a liquid phase.
In the embodiment of the application, a gallium nitride GnN bare chip can be adopted, and the AuSn alloy solder is selected to perform eutectic crystallization on the GaN chip by comparing the liquidus point, the thermal conductivity, the resistivity and the shear strength of three solders of AuGe, AuSi and AuSn, as shown in figure 2, in the miniaturized frequency source, the amplifier chip, the power divider chip and the frequency divider chip are directly completed by adopting AuSn solder sheet eutectic crystallization on the lower layer ceramic substrate, and after the completion, the chip is subjected to three-dimensional gold wire bonding, wherein the specification of a gold wire is 25 mu m.
And 2, sintering the bottom of the lower-layer ceramic substrate and the cavity, and sintering the loop filter on the lower-layer ceramic substrate.
In specific implementation, a SnAgCu alloy solder sheet with low first-order gradient (melting point temperature 217 ℃) can be adopted between the lower ceramic substrate and the cavity, and the substrate and the cavity are sintered at proper temperature through analysis of technological parameters of eutectic temperature curves of the ceramic substrate and the cavity; and sintering the loop filter onto the lower ceramic substrate by using a SnPb solder sheet.
And 3, welding at least two solder balls which have the same height and are mutually dispersed on the lower-layer ceramic substrate.
In specific implementation, 0.5mm BGA solder balls can be soldered to the lower ceramic substrate by SnPb solder paste.
And 4, sintering the input power supply, the input insulator and the gold-plated hole on the side surface of the cavity, and welding the input power supply, the input insulator and the gold-plated hole on the side surface of the cavity to the lower-layer ceramic substrate.
In specific implementation, the +5V and LD input insulators and the gold-plated holes on the side surface of the cavity may be sintered by SnPb solder paste and soldered on the lower ceramic substrate, so that the insulators and the ceramic substrate are electrically connected.
And 5, reflowing the phase-locked loop chip, the voltage-controlled oscillator, the temperature compensation crystal oscillator and the resistance-capacitance device to the upper ceramic substrate, and then bonding the filter chip and the gold wire to the upper ceramic substrate.
During specific implementation, the phase-locked loop chip, the voltage-controlled oscillator, the temperature compensation crystal oscillator and other resistance-capacitance devices of the packaging device can be firstly reflow-welded on the substrate by adopting SnPb soldering paste; and curing the filter chip on the substrate at 120 ℃ by adopting H20E conductive adhesive to form a good temperature gradient, and carrying out gold wire bonding with a side circuit after the chip is bonded, wherein the gold wire is in a specification of 25 mu m.
And 6, aligning the upper-layer ceramic substrate on the solder balls of the lower-layer ceramic substrate, and connecting the solder balls with the upper-layer ceramic substrate in a welding manner.
In specific implementation, the upper ceramic substrate can be placed in a prepared lower circuit structure, and the BGA solder balls are connected with the upper ceramic substrate by soldering with 138 ℃ low-temperature SnBi solder to form circuit connection of the middle layer.
And 7, sintering the three-line control input and the RF output with the gold-plated hole, and welding the three-line control input and the RF output to the upper-layer ceramic substrate.
In specific implementation, three-wire control input, RF output and the like of the upper ceramic substrate can be sintered in gold-plated holes on the upper side surface of the cavity by SnPb solder paste by using insulators of different types, and are welded with an input/output circuit of the upper ceramic substrate by using SnPb solder to form electrical connection.
And 8, aligning and stacking the lower ceramic substrate and the upper ceramic substrate to electrically interconnect the upper ceramic substrate and the lower ceramic substrate.
When concrete implementation, can adopt BGA to plant the ball technology and counterpoint the bottom and upper ceramic substrate circuit that accomplish and pile up, utilize and plant the ball equipment and carry out electrical interconnection with two-layer base plate, the BGA solder ball can adopt the solder ball, and its effect includes electrical connection, ground connection, support connection, and figure 2 shows for BGA effect picture, and BGA solder ball quantity can increase along with circuit layout in fact.
In specific implementation, the right side of the external I/O connection of the frequency source component adopts a side insulator vacuum welding mode to ensure air tightness, and the insulator is connected with the upper and lower ceramic substrate circuit boards to realize the direct current power supply and signal transmission function and facilitate the realization of welding the whole frequency source component on other circuits.
In specific implementation, the packaging process according to the embodiment of the application may further include testing/debugging the assembled multilayer circuit, and capping the three-dimensional stacked frequency source by using a laser sealing and welding process to achieve good sealing performance.
By adopting the three-pile stacking frequency source provided by the embodiment of the application, the application range is wider, and the volume is smaller; the frequency source can be used as a universal component and a module in a comprehensive radio frequency product with a plurality of frequency bands; compared with the traditional multifunctional broadband frequency source, the frequency source has the advantages of simpler principle structure, lower stray, lower power consumption, lower cost and easy repair and maintenance; a green welding mode is adopted in the three-dimensional stacking and packaging process, no fluxing agent pollutants exist, and the overall reliability of the assembly is ensured; the miniaturized volume of 8mm 3mm is realized, and the repeated development of the stacking process can be easily realized according to the product requirements.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (9)
1. A three-dimensional stacked frequency source, comprising:
a cavity;
the lower ceramic substrate is sintered at the bottom of the cavity, and the amplifier chip, the power divider chip and the frequency divider chip are eutectic and are bonded to the lower ceramic substrate through gold wires; a loop filter soldered to the lower ceramic substrate;
at least two solder balls which are same in height and are welded to the lower ceramic substrate in a mutually dispersed manner;
the upper ceramic substrate is aligned with the edge of the lower ceramic substrate, placed in the cavity and electrically connected with the lower ceramic substrate through being welded to the at least two welding balls; the phase-locked loop chip, the voltage-controlled oscillator, the temperature compensation crystal oscillator and the resistance-capacitance device are welded to the upper-layer ceramic substrate; the filter chip is bonded to the upper ceramic substrate through bonding and is in gold wire bonding with the upper ceramic substrate;
a gold-plated hole is formed in the side face of the cavity; an input power supply and a gold-plated hole are sintered and welded to the lower ceramic substrate; the three-wire control input and the RF output are respectively sintered with the two gold-plated holes and are welded to the upper ceramic substrate.
2. The three-dimensional stacked frequency source of claim 1, wherein the amplifier chip, the power divider chip, and the frequency divider chip are eutectic with gold-tin-AuSn alloy solder.
3. The three-dimensional stacked frequency source of claim 1, wherein said solder balls are BGA solder balls, and said solder balls are 0.5mm in diameter.
4. The three-dimensional stacked frequency source of claim 1, wherein said gold wire bonding uses a gold wire gauge of 25 μm.
5. The three-dimensional stacked frequency source of claim 1, wherein the filter chip is bonded to the upper ceramic substrate by a conductive glue.
6. The three-dimensional stacked frequency source according to claim 1, wherein said plurality of gold-plated holes are respectively opened at the side of said cavity at positions close to said upper ceramic substrate and said lower ceramic substrate, respectively.
7. The three-dimensional stacked frequency source of claim 6, wherein an input power source is sintered with gold plated holes located near said underlying ceramic substrate.
8. The three-dimensional stacked frequency source according to claim 7, wherein three-wire control inputs and RF outputs are sintered with two gold-plated holes near said upper ceramic substrate, respectively.
9. The three-dimensional stacked frequency source of claim 1, further comprising:
and the sealing cover is covered on the top of the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921354147.5U CN210536612U (en) | 2019-08-20 | 2019-08-20 | Three-dimensional stacking frequency source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921354147.5U CN210536612U (en) | 2019-08-20 | 2019-08-20 | Three-dimensional stacking frequency source |
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| CN210536612U true CN210536612U (en) | 2020-05-15 |
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| CN201921354147.5U Active CN210536612U (en) | 2019-08-20 | 2019-08-20 | Three-dimensional stacking frequency source |
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