CN116721981A - Three-dimensional high-density integrated high-power microwave assembly - Google Patents
Three-dimensional high-density integrated high-power microwave assembly Download PDFInfo
- Publication number
- CN116721981A CN116721981A CN202310783386.7A CN202310783386A CN116721981A CN 116721981 A CN116721981 A CN 116721981A CN 202310783386 A CN202310783386 A CN 202310783386A CN 116721981 A CN116721981 A CN 116721981A
- Authority
- CN
- China
- Prior art keywords
- multilayer wiring
- ceramic substrate
- power
- layer multilayer
- metal heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 230000017525 heat dissipation Effects 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005219 brazing Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- BLNMQJJBQZSYTO-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu][Mo][Cu] BLNMQJJBQZSYTO-UHFFFAOYSA-N 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 230000008093 supporting effect Effects 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 72
- 230000010354 integration Effects 0.000 description 12
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- RVIFKFNYKBNOEO-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu][Cu][Mo][Cu] RVIFKFNYKBNOEO-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a three-dimensional high-density integrated high-power microwave component, which comprises a ceramic tube shell, a high-power amplifier slide, a special-shaped metal heat dissipation platform, a middle-layer ceramic substrate, a microwave chip, an upper-layer ceramic substrate, a power chip, a passive device and a metal cap, wherein the ceramic tube shell is arranged on the middle-layer ceramic substrate; the bottom ceramic tube shell, the middle ceramic substrate and the upper ceramic substrate are vertically interconnected through BGA solder balls; the bottom high-power amplifier slide is directly sintered with a metal heat sink of the bottom ceramic tube shell; the large heat dissipation components of the stacked layers are connected with the bottom metal heat sink through the special-shaped metal heat sink platform; the chip and the passive device are connected with a wiring pad on the ceramic substrate through a lead structure; the upper and lower layers of ceramic substrates, the metallized through holes in the ceramic substrates and the BGA solder balls form shielding cavities of all functional chips; according to the invention, the heat flow of the high-power device is led out through the three-dimensional heat dissipation structure, so that the heat dissipation problem of the high-power component of the three-dimensional assembly is solved; the high output power, the high burning-out resistance and the high reliability are realized.
Description
Technical Field
The invention relates to the field of integration and encapsulation of radio frequency microwave components, in particular to a three-dimensional high-density integrated high-power microwave component.
Background
With the continuous development of GaN technology, the output power of high-power devices is increasing. The requirements of the microwave components on miniaturization and integration under the premise of high power are increasing. The main research hot spot of the current three-dimensional high-density integrated component research is miniaturization, multifunction and high frequency, but the output power is generally not high, and the miniaturization requirement of the system under high power cannot be met.
Along with the increase of output power, the miniaturization of the three-dimensional integrated high-power component needs to solve the problem of heat dissipation of local instantaneous high-density heat flow of the bottom layer of the stacked structure, and the problem of heat dissipation of local instantaneous high-density heat flow of the stacked layer device of the three-dimensional integrated component also needs to be solved.
Therefore, a novel three-dimensional high-density integrated high-power microwave assembly is needed, and the problems of stacking interconnection integration, heat dissipation, electromagnetic compatibility, reliability and the like in the field of three-dimensional integration and packaging of the high-power radio-frequency microwave assembly are solved.
Disclosure of Invention
The invention aims to: the invention aims to provide a three-dimensional high-density integrated high-power microwave component which solves the problem of heat dissipation of local high-density heat flow of a stacked layer and improves electromagnetic compatibility.
The technical scheme is as follows: the three-dimensional high-density integrated high-power microwave assembly comprises a bottom layer assembly, a middle layer assembly and an upper layer assembly, wherein the three-dimensional vertical electric interconnection and stacking of the assemblies are realized through metallized through holes in BGA solder balls, the middle layer assembly and the upper layer assembly from bottom to top;
the bottom layer component is provided with a tube shell metal frame and a metal cap, the middle layer component and the upper layer component are arranged in the tube shell metal frame, and the tube shell metal frame and the metal cap form a sealing structure;
the bottom layer assembly comprises a metal heat sink, a ceramic base and a high-power amplifier slide, wherein the ceramic base is arranged on the metal heat sink, and signals in the ceramic base are led out through a wire through a brazing lead; the high-power amplifier slide is arranged on the metal heat sink and connected with the ceramic base;
the middle layer assembly comprises a special-shaped metal heat dissipation platform, a middle layer multilayer wiring ceramic substrate, a microwave chip, a passive device, a large heat dissipation component, a second metallized through hole and a middle layer multilayer wiring, wherein the special-shaped metal heat dissipation platform, the microwave chip and the passive device are arranged on the middle layer multilayer wiring ceramic substrate, and the microwave chip and the passive device are respectively connected with the middle layer multilayer wiring ceramic substrate through gold wire bonding leads; the large heat dissipation component is connected with the metal heat sink through the special-shaped metal heat dissipation platform;
the upper layer assembly comprises an upper layer multilayer wiring ceramic substrate, a first metallized through hole, a multilayer wiring and a power chip, wherein the upper layer multilayer wiring is arranged in the upper layer multilayer wiring ceramic substrate, and the power chip is arranged on the upper layer multilayer wiring ceramic substrate and is connected with the upper layer multilayer wiring through a gold wire bonding lead;
each metallized through hole in the middle layer assembly is connected with the middle layer multilayer wiring, and each metallized through hole in the upper layer assembly is connected with the upper layer multilayer wiring.
Further, the high-power amplifier slide is arranged on the metal heat sink, and input and output signals of the high-power amplifier slide are connected with a bonding pad on the ceramic base through gold wire bonding wires.
Further, the large heat dissipation component is connected to the pads on the middle-layer multilayer wiring ceramic substrate through gold wire bonding wires.
Further, the middle-layer multilayer wiring ceramic substrate, the upper-layer multilayer wiring ceramic substrate, the second metallized through holes and the BGA solder balls form a plurality of chip shielding cavities.
Further, the metal heat sink is made of the following materials: tungsten copper, or molybdenum copper, or copper-molybdenum-copper, or diamond copper;
the special-shaped metal heat dissipation platform is made of the following materials: tungsten copper, or molybdenum copper, or copper-molybdenum-copper, or diamond copper.
Further, the BGA solder balls adopt non-slumping type BGA solder balls with supporting function.
Further, the high-power amplifier chip is sintered on the metal heat sink by adopting gold-tin solder.
Further, the passive device is formed by adhering the discrete device between the middle-layer multilayer wiring ceramic substrate and the upper-layer multilayer wiring ceramic substrate by conductive adhesion or directly integrating the discrete device between the middle-layer multilayer wiring ceramic substrate and the upper-layer multilayer wiring ceramic substrate.
Compared with the prior art, the invention has the following remarkable effects:
1. the microwave chip, the power chip and the passive device are integrated in the miniaturized assembly through the three-dimensional heterogeneous integration technology, so that the integration density is high;
2. the three-dimensional heat dissipation structure is formed by three-dimensional high-density heterogeneous integration and stacking of a plurality of materials, so that the heat dissipation problem of local high-density heat flow of a stacking layer in the high-power three-dimensional integrated assembly can be solved, and the three-dimensional high-density heat dissipation structure can be used for three-dimensional high-density integration and miniaturization of a hundred-watt or even kilowatt-level radio-frequency microwave assembly;
3. the high-power resistant component selected by the invention has high burning resistance; through the design of the shielding cavities of the chips, the electromagnetic compatibility is improved, the process is simple, the packaging cost is low, the reliability is high, and the like.
Drawings
FIG. 1 is a cross-sectional view of a package of the present invention;
fig. 2 is a general outline view of the package of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and the detailed description.
As shown in fig. 1, the three-dimensional high-density integrated high-power microwave component integrates a ceramic substrate, an active component and a passive component in a small size, has high integration density, and comprises a metal heat sink 1 at the bottom of a tube shell, a ceramic base 2, a brazing lead 3, a special-shaped metal heat dissipation platform 4, a middle-layer multilayer wiring ceramic substrate 5, an upper-layer multilayer wiring ceramic substrate 6, a metal frame 7, a metal cap 8, a high-power amplifier chip 9, gold wire bonding leads 10, BGA solder balls 11, a microwave chip 12, a passive component 13, a first metallized through hole 14 in the upper-layer ceramic substrate, a multilayer wiring 15 in the ceramic substrate, a power chip 16, a large heat dissipation component 17 and a second metallized through hole 18 in the middle-layer ceramic substrate;
wherein, ceramic base 2, middle-layer multilayer wiring ceramic substrate 5 and upper-layer multilayer wiring ceramic substrate 6 are three-dimensionally stacked from bottom to top through BGA solder balls 11 and first metallized through holes 14, realizing vertical interconnection of microwave signals, power signals and control signals, greatly reducing the size of high-power microwave components, and realizing high integration and miniaturization.
The ceramic base 2 is provided with the tube shell metal frame 7 and the metal cap 8 to form a sealing airtight structure, so that the reliability of the three-dimensional integrated high-power assembly is improved.
The signals in the ceramic base 2 are led out through the brazing lead 3 through the wiring in the bottom ceramic base, so as to realize the leading-out of microwaves, power and control signals.
The high-power amplifier slide 9 is sintered on the metal heat sink 1 of the ceramic base 2 by adopting gold-tin eutectic, input and output signals of the high-power amplifier slide 9 are connected with a bonding pad on the ceramic base 2 through gold wire bonding leads 10, and through the design of the heat dissipation structure, bottom high-density heat flow can be timely conducted out through the metal heat sink 1.
The large heat dissipation component 17 of the middle stacked layer is connected with the metal heat sink 1 through the special-shaped metal heat dissipation platform 4, signals are connected with the bonding pads on the middle-layer multilayer wiring ceramic substrate 5 through the gold wire bonding lead 10, through the design of the three-dimensional heat dissipation structure, the local high-density heat flow of the middle layer can be timely led out through the special-shaped metal heat dissipation platform 4 and the metal heat sink 1, and the special-shaped structure ensures heat dissipation and simultaneously avoids the upper space of the high-power amplifier slide 9, so that the integration level is further improved.
The power chip 16 is connected with a wiring pad on the upper layer multilayer wiring ceramic substrate 6 through a gold wire bonding wire 10, and then the upper and lower layer interconnection and fan-out are realized through a first metallization through hole 14 and a first multilayer wiring 15 which are vertically interconnected; the microwave chip 12 and the passive device 13 are respectively connected with the wiring pads on the upper-middle layer multilayer wiring ceramic substrate 5 through the gold bonding wires 10, and then the upper-lower layer interconnection and fan-out are realized through the second metallized through holes 18 and the second multilayer wiring 19 which are vertically interconnected, so that the invention realizes high integration and miniaturization through three-dimensional vertical gas interconnection and stacking.
The middle-layer multilayer wiring ceramic substrate 5, the upper-layer multilayer wiring ceramic substrate 6, the second metallized through holes 18 and the BGA solder balls 11 form a plurality of chip shielding cavities, so that the electromagnetic isolation and electromagnetic compatibility of the three-dimensional integrated high-power component are improved.
The ceramic base 2, the middle-layer multilayer wiring ceramic substrate 5 and the upper-layer multilayer wiring ceramic substrate 6 are realized by adopting a multilayer wiring ceramic process, and specifically, high-temperature co-fired ceramic (HTCC) or low-temperature co-fired ceramic (LTCC) can be adopted. Further, the organic dielectric substrate processing method can be used to replace the middle-layer multilayer wiring ceramic substrate 5 and the upper-layer multilayer wiring ceramic substrate 6, thereby realizing low-cost manufacture.
The metal heat sink 1 at the bottom of the tube shell and the special-shaped metal heat dissipation platform 4 are made of high-heat-conductivity materials including tungsten copper, molybdenum copper, copper-molybdenum-copper (CMC), copper-molybdenum copper-copper (CPC), diamond copper and the like, so that the heat dissipation performance of the three-dimensional integrated high-power assembly is greatly improved.
The BGA balls 11 for three-dimensional vertical interconnection employ non-slumping type BGA balls having a supporting function.
The bottom high-power amplifier slide 9 consists of a GaN tube core, a ceramic pre-matching circuit, a bias circuit and a single-layer capacitor, wherein all components are sintered on the bottom metal heat sink 1 by gold-tin solder respectively, and interconnection is realized in a gold wire bonding mode in sequence.
The passive device 13 comprises a bridge, a filter, a power divider and the like, and can be connected to the middle-layer multilayer wiring ceramic substrate 5 and the upper-layer multilayer wiring ceramic substrate 6 by adopting discrete devices through conductive adhesive, and the components are interconnected in sequence through gold wire bonding; the wiring of the ceramic substrate can be directly integrated into the middle-layer multilayer wiring ceramic substrate 5 and the upper-layer multilayer wiring ceramic substrate 6, and the wiring of the ceramic substrate is directly interconnected in the ceramic substrate, and the selected high-power-resistant component can ensure that the three-dimensional integrated high-power component can resist radio frequency power above hundred watts; wherein a certain gap is provided between the passive device 13 and the upper layer multilayer wiring ceramic substrate 6.
As shown in fig. 2, the three-dimensional high-density integrated high-power microwave module of the present invention includes a bottom layer module 20, a middle layer module 21 and an upper layer module 22, and three-dimensional vertical electrical interconnection and stacking are realized through the BGA solder balls 11, the first metallized through holes 14 and the second metallized through holes 18 from bottom to top.
The assembly process is as follows:
the bottom high power amplifier chip 9 is sintered on the metal heat sink 1 of the ceramic base 2 by using solder, and the high power amplifier chip 9 is connected with a bonding pad on the ceramic base 2 by using a gold wire bonding lead 10.
The large heat dissipation component 17 is sintered over the shaped metal heat sink deck 4 using solder, and the large heat dissipation component 17 is connected to pads on the middle-layer multilayer wiring ceramic substrate 5 using gold wire bonding wires 10.
The shaped metal heat sink platform 4 carrying the large heat dissipating components 17 is sintered over the bottom metal heat sink 1 of the ceramic base 2 using solder.
The microwave chip 12, the passive device 13, the power chip 16, and the like are bonded to the middle-layer multilayer wiring ceramic substrate 5 and the upper-layer multilayer wiring ceramic substrate 6 using a conductive paste, and the bonding pads of the microwave chip 12, the passive device 13, the power chip 16 and the bonding pads on the middle-layer multilayer wiring ceramic substrate 5 are connected using gold wire bonding wires 10.
BGA solder balls 11 are planted at the BGA bonding pads on the bottom surfaces of the middle-layer multilayer wiring ceramic substrate 5 and the upper-layer multilayer wiring ceramic substrate 6; the BGA solder balls 11 on the bottom surface of the middle-layer multilayer wiring ceramic substrate 5 are soldered to BGA pads on the upper surface of the ceramic base 2 by reflow soldering, and the stacking of the bottom and middle-layer ceramic substrates is completed.
The BGA solder balls 11 on the bottom surface of the upper multilayer wiring ceramic substrate 6 are soldered to BGA pads on the upper surface of the ceramic base 5 by reflow, and the stack of the middle layer multilayer wiring ceramic substrate 5 and the upper layer multilayer wiring ceramic substrate 6 is completed.
The metal cap 8 is welded to the metal frame 7 of the tube shell by adopting parallel seal welding or laser seal welding to form a sealed airtight structure.
And the shell metal frame 7, the brazing lead 3 and the ceramic base 2 are welded by adopting silver-copper solder.
Claims (8)
1. The three-dimensional high-density integrated high-power microwave assembly is characterized by comprising a bottom layer assembly (20), a middle layer assembly (21) and an upper layer assembly (22), wherein the three-dimensional vertical electric interconnection and stacking of the assemblies are realized through metallized through holes in the BGA solder balls (11), the middle layer assembly and the upper layer assembly from bottom to top;
the bottom layer assembly (20) is provided with a tube shell metal frame (7) and a metal cap (8), the middle layer assembly (21) and the upper layer assembly (22) are arranged in the tube shell metal frame (7), and the tube shell metal frame (7) and the metal cap (8) form a sealing structure;
the bottom layer assembly (20) comprises a metal heat sink (1), a ceramic base (2) and a high-power amplifier slide (9), wherein the ceramic base (2) is arranged on the metal heat sink (1), and signals in the ceramic base (2) are led out through a brazing lead (3) through wiring; the high-power amplifier slide (9) is arranged on the metal heat sink (1) and is connected with the ceramic base (2);
the middle layer assembly (21) comprises a special-shaped metal heat dissipation platform (4), a middle layer multilayer wiring ceramic substrate (5), a microwave chip (12), a passive device (13), a large heat dissipation component (17), a second metalized through hole (18) and a middle layer multilayer wiring (19), wherein the special-shaped metal heat dissipation platform (4), the microwave chip (12) and the passive device (13) are arranged on the middle layer multilayer wiring ceramic substrate (5), and the microwave chip (12) and the passive device (13) are connected with the middle layer multilayer wiring ceramic substrate (5) through gold wire bonding wires (10) respectively; the large heat dissipation component (17) is connected with the metal heat sink (1) through the special-shaped metal heat dissipation platform (4);
the upper layer assembly (22) comprises an upper layer multilayer wiring ceramic substrate (6), a first metallized through hole (14), a multilayer wiring (15) and a power chip (16), wherein the upper layer multilayer wiring (15) is arranged in the upper layer multilayer wiring ceramic substrate (6), and the power chip (16) is arranged on the upper layer multilayer wiring ceramic substrate (6) and is connected with the upper layer multilayer wiring (15) through a gold wire bonding lead (10);
each of the metallized through holes in the middle layer assembly (21) is connected to the middle layer multilayer wiring (19), and each of the metallized through holes in the upper layer assembly (22) is connected to the upper layer multilayer wiring (15).
2. The three-dimensional high-density integrated high-power microwave assembly according to claim 1, wherein the high-power amplifier slide (9) is arranged on the metal heat sink (1), and input and output signals of the high-power amplifier slide (9) are connected with bonding pads on the ceramic base (2) through gold wire bonding wires (10).
3. The three-dimensional high-density integrated high-power microwave assembly according to claim 1, characterized in that the large heat dissipation component (17) is connected to the bonding pads on the middle layer multilayer wiring ceramic substrate (5) by gold wire bonding wires (10).
4. The three-dimensional high-density integrated high-power microwave assembly according to claim 1, wherein the middle-layer multilayer wiring ceramic substrate (5), the upper-layer multilayer wiring ceramic substrate (6), the second metallized through holes (18) and the BGA solder balls (11) form a plurality of chip shielding cavities.
5. The three-dimensional high-density integrated high-power microwave assembly according to any one of claims 1-4, wherein the metal heat sink (1) is made of the following materials: tungsten copper, or molybdenum copper, or copper-molybdenum-copper, or diamond copper;
the special-shaped metal heat dissipation platform (4) is made of the following materials: tungsten copper, or molybdenum copper, or copper-molybdenum-copper, or diamond copper.
6. The three-dimensional high-density integrated high-power microwave assembly according to any of claims 1-4, characterized in that the BGA solder balls (11) are non-slumping BGA solder balls with a supporting effect.
7. The three-dimensional high-density integrated high-power microwave assembly according to any one of claims 1-4, characterized in that the high-power amplifier chip (9) is sintered onto the metal heat sink (1) by gold-tin solder.
8. The three-dimensional high-density integrated high-power microwave assembly according to any one of claims 1-4, characterized in that the passive device (13) is glued between the middle-layer multilayer wiring ceramic substrate (5), the upper-layer multilayer wiring ceramic substrate (6) or directly integrated between the middle-layer multilayer wiring ceramic substrate (5), the upper-layer multilayer wiring ceramic substrate (6) by means of a conductive glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310783386.7A CN116721981A (en) | 2023-06-29 | 2023-06-29 | Three-dimensional high-density integrated high-power microwave assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310783386.7A CN116721981A (en) | 2023-06-29 | 2023-06-29 | Three-dimensional high-density integrated high-power microwave assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116721981A true CN116721981A (en) | 2023-09-08 |
Family
ID=87869658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310783386.7A Pending CN116721981A (en) | 2023-06-29 | 2023-06-29 | Three-dimensional high-density integrated high-power microwave assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116721981A (en) |
-
2023
- 2023-06-29 CN CN202310783386.7A patent/CN116721981A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7268426B2 (en) | High-frequency chip packages | |
| KR100839067B1 (en) | Electronic circuit module and manufacturing method thereof | |
| US7176506B2 (en) | High frequency chip packages with connecting elements | |
| US5381039A (en) | Hermetic semiconductor device having jumper leads | |
| US7358604B2 (en) | Multichip circuit module and method for the production thereof | |
| CN113838845B (en) | TR assembly based on three-dimensional stacked airtight package and assembling method | |
| JP2000114413A (en) | Semiconductor device, its manufacture, and method for mounting parts | |
| CN111698824B (en) | Integrated interconnection structure of self-airtight packaging functional module and implementation method | |
| CN114759015A (en) | Three-dimensional stacking integrated structure of high-power radio frequency chip and preparation method thereof | |
| JP7080322B2 (en) | Semiconductor device | |
| CN112259507B (en) | Heterogeneous integrated system-in-package structure and packaging method | |
| CN111199957A (en) | Three-dimensional packaging structure integrating chip and antenna and preparation method thereof | |
| CN112420679A (en) | Radio frequency module three-dimensional stacking structure and manufacturing method thereof | |
| CN112349691A (en) | Airtight high-heat-conductivity LCP packaging substrate, manufacturing method and multi-chip system-in-package structure | |
| CN114050130A (en) | CSOP type ceramic shell, amplifying filter and manufacturing method | |
| CN109904128B (en) | Three-dimensional integrated T/R assembly packaging structure and packaging method based on silicon-based carrier plate | |
| CN111599789B (en) | Ceramic leadless chip type packaging structure | |
| CN116721981A (en) | Three-dimensional high-density integrated high-power microwave assembly | |
| CN112820694B (en) | Chip shielding and airtight packaging method and packaging structure | |
| CN115274568A (en) | Radio frequency front end three-dimensional integrated structure | |
| CN213583746U (en) | Millimeter wave chip flip BGA packaging structure based on high-temperature co-fired ceramic | |
| JPH0752759B2 (en) | Package | |
| CN114725068A (en) | Low-profile three-dimensional integrated radio frequency module capable of keeping high Q value of element | |
| CN113937066A (en) | High-heat-dissipation-density airtight double-sided double-cavity 14-laminated ceramic packaging structure | |
| JP3093278B2 (en) | Electronic package with improved pad design |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |