CN110392924B - 半导体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 229920005989 resin Polymers 0.000 claims abstract description 100
- 239000011347 resin Substances 0.000 claims abstract description 100
- 238000000465 moulding Methods 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 42
- 238000010521 absorption reaction Methods 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 230000003746 surface roughness Effects 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 230000009477 glass transition Effects 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910001080 W alloy Inorganic materials 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 4
- 230000000977 initiatory effect Effects 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
半导体装置(1)具备:散热器(23);半导体芯片(3)以及电路基板(4),它们通过固定材料(5)而被固定至散热器(23);多个引线(22),它们经由导线(6)而与半导体芯片(3)以及电路基板(4)连接;以及模塑树脂(7),其设置于散热器(23)之上。模塑树脂(7)覆盖引线(22)的一部分、导线(6)以及半导体芯片(3),使引线(22)的剩余部分露出。在引线(22)以及散热器(23)的表面设置有表面粗糙度为RMS=150nm以上的粗糙化镀层(21)。固定材料(5)是焊料或者烧结银。模塑树脂(7)的吸水率小于或等于0.24%。
Description
技术领域
本发明涉及半导体装置。
背景技术
当前,例如已知如日本特开2015-164165号公报所公开的那样,将由GaN等宽带隙半导体材料构成的半导体芯片通过模塑树脂而进行封装的半导体装置。通过使用与硅相比带隙大的宽带隙半导体,从而提供能够高温动作的半导体芯片。为了实现与高温动作相对应的模塑封装构造,需要选定能够耐受该高温动作的模塑树脂。关于该点,在上述专利文献1的第0023段中,作为模塑树脂的玻璃化转变温度Tg的优选的值而记载有大于或等于195℃这一数值。另外,在上述专利文献1的第0014段中记载有如下内容,即,使用烧结银接合体而将半导体芯片与散热块接合,以使得能够耐受半导体芯片的高温动作。
专利文献1:日本特开2015-164165号公报
发明内容
但是,在本申请发明人反复深入研究之后,发现就上述专利文献1所记载的构造而言,在吸湿回流焊试验中产生树脂从散热器剥离的问题。如果不解决该树脂剥离的问题,则存在无法对半导体装置进行回流焊安装,不能发挥树脂封装构造的优点这一问题。
本发明就是为了解决上述课题而提出的,其目的在于提供一种半导体装置,该半导体装置具有能够高温动作的树脂封装型的封装构造,以抑制回流焊工序中的树脂剥离的方式得到了改善。
本发明涉及的半导体装置具备:
散热器;
半导体芯片,其通过固定材料而被固定至所述散热器;
引线,其经由导线而与所述半导体芯片连接;以及
模塑树脂,其以覆盖所述引线的一部分、所述导线以及所述半导体芯片的方式设置于所述散热器之上,该模塑树脂的玻璃化转变温度大于或等于195℃,
在所述散热器的与所述模塑树脂重叠的表面以及所述引线的与所述模塑树脂重叠的表面设置有表面粗糙度为RMS=150nm以上的粗糙化镀层,
所述固定材料是焊料或者烧结银,
所述模塑树脂的吸水率小于或等于0.24%。
发明的效果
本申请发明人新发现了,如果是本发明的构造,则即使使用高玻璃化转变温度的模塑树脂也能够抑制回流焊安装时的树脂剥离。由此,提供抑制了回流焊工序中的树脂剥离、能够高温动作的树脂封装型的半导体装置。
附图说明
图1是表示本发明的实施方式涉及的半导体装置的外观斜视图。
图2是表示本发明的实施方式涉及的半导体装置的内部构造的斜视图。
图3是表示本发明的实施方式涉及的半导体装置的剖面图。
图4是表示本发明的实施方式涉及的半导体装置的局部放大图。
图5是表示本发明的实施方式涉及的半导体装置的变形例的内部构造的图。
图6是表示本发明的实施方式涉及的半导体装置的变形例所具备的散热器的俯视图。
图7是表示本发明的实施方式涉及的半导体装置的变形例的剖面图。
具体实施方式
图1是表示本实施方式的实施方式涉及的半导体装置1的外观斜视图。如图1所示,半导体装置1具备:模塑树脂7,其设置于散热器23之上;以及引线22,其从模塑树脂7凸出。图2是表示本实施方式的实施方式涉及的半导体装置1的内部构造的斜视图。如图2所示,半导体装置1具备:散热器23;半导体芯片3以及电路基板4,它们通过固定材料5而被固定至散热器23;以及多个引线22,它们经由导线6而与半导体芯片3以及电路基板4连接。根据图1以及图2可知,模塑树脂7覆盖引线22的一部分、导线6以及半导体芯片3,使引线22的剩余部分露出。
半导体装置1是树脂封装件,能够回流焊安装。对于回流焊安装时的热应力而言,作为一个例子,峰值温度是260℃,时间为30秒以内。半导体装置1是以即使施加这样的热应力也不产生模塑树脂7相对于散热器23以及引线22的剥离的方式得到改善后的半导体装置。
图3是表示本实施方式的实施方式涉及的半导体装置1的剖面图。图3示出沿着图1以及图2的A-A′线而将半导体装置1切断时的剖面图。图4是表示本实施方式的实施方式涉及的半导体装置1的局部放大图。图4是将图3的X部分放大的图。
在散热器23的表面整体设置有表面粗糙度为RMS=150nm以上的粗糙化镀层21。在引线22的表面整体也设置有粗糙化镀层21。此外,粗糙化镀层21只要设置在散热器23以及引线22的至少与模塑树脂7重叠的表面即可。因此,也可以在散热器23以及引线22的从模塑树脂7露出的部位不设置粗糙化镀层21。散热器23以及引线22由铜形成。铜具有398W/mK这样的高的热传导率。对于散热器23以及引线22的材料,如后面所说明的那样能够进行各种各样的变形,但从得到高的散热性的观点出发,优选由具有大于或等于200W/mK的热传导率的材料形成。
半导体装置1是以大于或等于1GHz的频率工作且输出大于或等于1W的电力的高频高输出半导体装置。内置于半导体装置1的半导体芯片3由氮化镓(GaN)形成。GaN半导体装置与以往高频半导体装置所使用的硅(Si)半导体装置、砷化镓(GaAs)半导体装置相比,能够在高温下动作。具体地说,半导体装置1的工作时的半导体芯片3的结温大于或等于250℃。在实施方式中,作为一个例子,将半导体装置1设为无线通信半导体装置。半导体装置1也可以是作为无线通信半导体装置之一的移动电话用基站。在无线通信半导体装置涉及的技术领域中的谋求高输出化的领域中,存在由通信容量增大带来的宽带化以及半导体装置的小型化这样的要求,变得主要使用GaN半导体装置。半导体装置1能够满足上述宽带化以及小型化。另外,与应用着螺丝固定方式的金属基座封装构造以及陶瓷封装构造的以往的GaN半导体装置相比,实施方式涉及的半导体装置1是树脂封装构造,因而能够低成本化。
半导体芯片3以及电路基板4通过固定材料5而固定在散热器23的表面。固定材料5是焊料或者烧结银。焊料以及烧结银与银膏树脂相比,不容易吸收水分且热传导率良好。
模塑树脂7将半导体芯片3以及电路基板4进行封装,以保护半导体芯片3以及电路基板4不受异物以及外力等损害。模塑树脂7的玻璃化转变温度大于或等于195℃。模塑树脂7的吸水率小于或等于0.24%。更具体而言,在实施方式中,将模塑树脂7设为玻璃化转变温度为200℃、热分解开始温度为300℃、吸水率为0.24%、且线膨胀系数为9~19ppm的模塑树脂。
半导体芯片3由GaN形成,因而如果达到300℃附近而成为高温,则有可能发生故障。但是,只要是不发生故障的温度范围,有时也在接近300℃的高温的状态下工作。通过将模塑树脂7的热分解开始温度设为大于或等于300℃,从而即使在半导体芯片3的高温动作上限附近,也能够可靠地使模塑树脂7不进行热分解。
本申请发明人发现了,就使用了高玻璃化转变温度的模塑树脂的半导体装置而言,为了抑制回流焊安装时的树脂剥离,下述的第一对策~第三对策是有效的。
第一对策是降低模塑树脂7的材料自身的吸水率。模塑树脂7的材料能够使用含有环氧树脂和无机填料的热固性树脂。通过使该热固性树脂热硬化来提供模塑树脂7。作为模塑树脂7的物性值之一,存在玻璃化转变温度(Tg)。以模塑树脂7具有高的玻璃化转变温度以及高的热分解开始温度的方式选定模塑树脂7所包含的环氧树脂,以使得能够耐受半导体装置1的高温动作。但是,通常,由于环氧树脂的分子构造的原因,如果玻璃化转变温度高,则以往的模塑树脂材料存在吸水率也变高的倾向。模塑树脂剥离的原因之一是封装件内部的水分在回流焊安装时水蒸气化。仅单纯地选定高玻璃化转变温度的树脂的话,吸水率也会变高,会由于回流焊安装时的热应力而发生树脂剥离。
然而,根据近年来开发的技术,开始通过控制环氧树脂的分子构造,提供在具有高的玻璃化转变温度的同时将吸水率抑制得低的模塑树脂材料。因此,本申请发明人着眼于这样的技术动向,使用具有高玻璃化转变温度且降低了吸水率的模塑树脂材料而进行了实验。根据在后述的表1~3中示出的实验结果,发现了如果将吸水率抑制在小于或等于0.24%,则通过与后述的第二对策以及第三对策进行组合,能够抑制回流焊安装时的树脂剥离。此外,根据实验结果,如果吸水率超过0.24%则在回流焊安装时有可能发生部分剥离,在吸水率大于或等于0.30%时发生整面剥离。
第二对策是不向模塑树脂7的内部置入容易吸水的物质。在模塑树脂7内部,半导体芯片3以及电路基板4通过固定材料5而芯片键合至散热器23。就半导体装置1而言,该固定材料5为焊料或者烧结银。假设在使用了银膏树脂等芯片键合材料的情况下,由于银膏树脂所包含的环氧树脂吸湿而来的水分,在半导体装置1的回流焊安装时模塑树脂7会剥离。在该点上,就实施方式涉及的半导体装置1而言,通过焊料或者烧结银而将半导体芯片3等固定,因而能够抑制模塑树脂7内的水分。
第三对策是充分提高模塑树脂与散热器之间的密合强度。就半导体装置1而言,通过设置粗糙化镀层21,从而使模塑树脂7与散热器23、引线22之间的密合强度由于锚固效应而提高。根据本申请发明人的实验而发现了,粗糙化镀层21的表面粗糙度需要RMS值(Root-mean-square)为大于或等于150nm。实施方式中的表面粗糙度是通过原子力显微镜(AFM)而测定的RMS值。RMS值为相对于平均值的误差的平方值的平均的平方根。
根据本申请发明人的实验而明确了,通过组合上述的第一对策~第三对策这三者,从而能够在回流焊安装时抑制模塑树脂7与散热器23等之间的树脂剥离。
此外,作为与模塑树脂7的材料选定相关的更优选的附带的对策,也可以实施使模塑树脂7与散热器23、引线22之间的线膨胀系数差充分小的改良。铜的线膨胀系数约为17ppm,因而也可以以使得小于或等于玻璃化转变温度时的模塑树脂7的α1区域的线膨胀系数为9~19ppm的方式对模塑树脂7的材料成分进行调整。由此,能够使在模塑树脂7产生的应力减小,能够抑制树脂剥离。
使用下述的表1~3对本申请发明人进行的实验的结果进行说明。表1~3示出使表面粗糙度、接合材料以及模塑树脂的吸水率不同的样本的吸湿回流焊试验的结果。试验条件为Jedec的Lv.3。
表1是使用具有玻璃化转变温度Tg=208以及线膨胀系数=12ppm的第一模塑树脂而进行了试验的结果。如表1所示,在第一模塑树脂的吸水率为0.3%的情况下,无论粗糙化镀层的表面粗糙度以及接合材料的组合如何,在吸湿回流焊试验之后都发生了剥离。
[表1]
表2是使用具有玻璃化转变温度Tg=195以及线膨胀系数=10ppm的第二模塑树脂而进行了试验的结果。如表2所示,在第二模塑树脂的吸水率为0.27%的情况下,在吸湿回流焊试验之后发生了剥离。但是,表面粗糙度为150nm~250nm且接合材料使用了焊料或者烧结银的样本为部分剥离。
[表2]
表3是使用具有玻璃化转变温度Tg=195以及线膨胀系数=12ppm的第三模塑树脂而进行了试验的结果。如表3所示,在第三模塑树脂的吸水率为0.24%的情况下,在表面粗糙度为150nm~250nm且接合材料使用了焊料或者烧结银的样本中,没有发生剥离。
[表3]
实施方式涉及的半导体装置1能够如下所述各种各样地变形。
优选粗糙化镀层21的表面粗糙度为RMS=150nm~250nm。在RMS=150nm以下时,密合强度不足,在回流焊安装时会发生树脂剥离。另外,在RMS=250nm以上时,由于粗糙化的影响,难以通过清洗而去除镀敷液残渣。如果由于镀敷液残渣的影响在镀层表面产生斑点以及变色,则发生导线不附着。从这几点来看,优选表面粗糙度在通过原子力显微镜(AFM)进行测定时为RMS=150nm~250nm。由此,能够抑制不容易将镀敷液残渣从散热器23以及引线22清洗去除这一情况。但是,如果仅考虑树脂剥离的抑制效果,则表面粗糙度也可以比250nm大。
模塑树脂7的热分解开始温度也可以小于300℃。在半导体装置1的规格方面,只要确定半导体芯片3的动作温度不会达到300℃附近的高温,则模塑树脂7的热分解开始温度也可以是小于300℃的低温。
高频半导体装置即半导体芯片3具体地说也可以是例如高输出放大器、HEMT或者MOSFET等。另外,半导体装置1不限于频率大于或等于1GHz且输出大于或等于1W的电力的半导体装置。半导体装置1也可以是频率小于1GHz的高频半导体装置,还可以是输出电力小于1W。
半导体芯片3的材料不限定于氮化镓(GaN)。也可以使用碳化硅(SiC)或者金刚石等宽带隙半导体材料。并且,根据半导体装置1,具有在使用高玻璃化转变温度的模塑树脂7的同时能够抑制回流焊安装时的模塑树脂7的剥离这一效果,该效果是无论半导体芯片3的半导体材料如何都会得到的。因此,也可以不使用宽带隙半导体材料,半导体芯片3的材料也可以是硅(Si)或者砷化镓(GaAs)。
散热器23以及引线22的材料不限于铜。作为散热器23以及引线22的材料还能够使用铜合金以及铝。用作散热器23以及引线22的材料的铜合金也可以使用铜与钼的合金。铜合金的组成也可以是Cu/PCM/Cu。“Cu/PCM(Cu-Mo)/Cu”是指将Cu-Mo作为芯材而在两面贴合了Cu的三层构造的包材。用作散热器23以及引线22的材料的铜合金也可以是铜与钨的合金。此外,散热器23以及引线22的材料可以相同,也可以不同。
优选散热器23以及引线22由具有大于或等于200W/mK的热传导率的材料形成。由此,能够在半导体芯片3进行高温动作时发挥良好的散热性。铜的热传导率约为400W/mK。铜钼合金(铜35%、钼70%)的热传导率为200W/mK,通过使铜的比例高于35%且使钼小于70%,从而能够使热传导率高于200W/mK。铜钨合金(铜20%、钨80%)的热传导率为200W/mK,铜钨合金(铜11%、钨89%)的热传导率大于或等于200W/mK。铝的热传导率大于或等于200W/mK。但是,如果所要求的散热性能不严格,则也可以由具有小于或等于200W/mK的热传导率的材料形成。
优选模塑树脂7的线膨胀系数为9~19ppm。如果对该点进行说明,则首先,铜的线膨胀系数约为17ppm。实施方式涉及的铜制的散热器23与模塑树脂7之间的线膨胀系数差被抑制为小于或等于8ppm。另外,散热器用途的铜钼合金的线膨胀系数为7~11.5ppm。变形为铜钼合金制的散热器23与模塑树脂7之间的线膨胀系数差被抑制为小于或等于12ppm。散热器用途的铜钨合金的线膨胀系数为6~8.3ppm。变形为铜钨合金制的散热器23与模塑树脂7之间的线膨胀系数差被抑制为小于或等于13ppm。铝的线膨胀系数约为24ppm。变形为铝制的散热器23与模塑树脂7之间的线膨胀系数差被抑制为小于或等于15ppm。其结果,能够使散热器23具有高的散热性,并且抑制模塑树脂7的剥离。
图5是表示本实施方式的实施方式涉及的半导体装置1的变形例的内部构造的图。在图5中,未图示模塑树脂7,但在该变形例中也与图1同样地,模塑树脂7覆盖散热器23等。图6是表示本实施方式的实施方式涉及的半导体装置1的变形例具备的散热器23的俯视图。图7是表示本实施方式的实施方式涉及的半导体装置1的变形例的剖面图。图7示出沿着图5的B-B′线而将半导体装置1切断后的剖面,在图7中还图示有模塑树脂7。在图5~图7所示的变形例中,在散热器23的表面的四角设置有以包围半导体芯片3的方式延伸的槽24。存在于四角的槽24各自可以是多个槽或者也可以是一条槽。优选槽24的深度大于或等于50μm,优选槽24的长度大于或等于1mm。槽24的剖面形状可以如图7所示是V字形状,或者也可以是U字形状或者倒梯形形状等。根据本变形例,即使在由于回流焊等而在模塑树脂7与散热器23等之间发生了树脂剥离的情况下,也能够利用槽24而改变模塑的剥离发展方向。其结果,能够防止模塑树脂7的剥离发展至安装有半导体芯片3以及电路基板4的区域。
标号的说明
1 半导体装置
3 半导体芯片
4 电路基板
5 固定材料
6 导线
7 模塑树脂
22 引线
23 散热器
24 槽
Claims (4)
1.一种半导体装置,其具备:
散热器;
半导体芯片,其通过固定材料而被固定至所述散热器,由GaN形成;
引线,其经由导线而与所述半导体芯片连接;以及
模塑树脂,其以覆盖所述引线的一部分、所述导线以及所述半导体芯片的方式设置于所述散热器之上,该模塑树脂的玻璃化转变温度大于或等于195℃,
在所述散热器的与所述模塑树脂重叠的表面以及所述引线的与所述模塑树脂重叠的表面设置有表面粗糙度为RMS=150nm以上且RMS=250nm以下的粗糙化镀层,
所述固定材料是焊料或者烧结银,
所述模塑树脂的吸水率小于或等于0.24%,
所述散热器以及所述引线的材料为铜、铜钼合金、铜钨合金或者铝,
所述模塑树脂的线膨胀系数为9~19ppm。
2.根据权利要求1所述的半导体装置,其中,
所述半导体芯片由宽带隙半导体材料形成,
所述模塑树脂的热分解开始温度大于或等于300℃。
3.根据权利要求1或2所述的半导体装置,其中,
所述散热器由具有大于或等于200W/mK的热传导率的材料形成。
4.根据权利要求1至3中任一项所述的半导体装置,其中,
在所述散热器的所述表面的四角设置有以包围所述半导体芯片的方式延伸的槽。
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DE112017007098T5 (de) | 2019-11-21 |
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WO2018154635A1 (ja) | 2018-08-30 |
US11309231B2 (en) | 2022-04-19 |
US20210175150A1 (en) | 2021-06-10 |
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CN110392924A (zh) | 2019-10-29 |
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