CN110380178A - Millimeter wave radial direction multipath power distributor based on micromachining processing - Google Patents
Millimeter wave radial direction multipath power distributor based on micromachining processing Download PDFInfo
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- CN110380178A CN110380178A CN201910690193.0A CN201910690193A CN110380178A CN 110380178 A CN110380178 A CN 110380178A CN 201910690193 A CN201910690193 A CN 201910690193A CN 110380178 A CN110380178 A CN 110380178A
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- waveguide
- silicon wafer
- radial direction
- millimeter wave
- upper piece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract
The invention discloses a kind of millimeter wave radial direction multipath power distributor based on micromachining processing, distributor is made of upper layer silicon wafer and lower layer's silicon wafer, and wherein upper layer silicon wafer includes input transmission line, radial waveguide upper piece, output transmission waveguide upper piece and several output rectangular waveguide mouth for being based on circular waveguide higher mode；Lower layer's silicon wafer includes cylinder boss, radial waveguide bottom sheet and output waveguide bottom sheet；Upper silicon wafer and lower silicon slice pass through the complete radial power splitter of micromechanics bonding technology realization.The present invention is based on the millimeter wave radial direction power dividers of micromachining processing to have higher machining accuracy, more compact structure, subsequent installation is suitble to using Micro-package technique, more high integration can be obtained, power distribution and synthesis that millimeter involves the above frequency range are mainly used for.
Description
Technical field
The present invention relates to a kind of power dividers, and in particular to a kind of millimeter wave radial direction multichannel based on micromachining processing
Power divider.
Background technique
In various millimeter-wave systems, high power solid state power amplifier is important component part.Single millimeter wave power device
Output power is limited, and bigger power is obtained often by the mode of power combing.
Power divider/synthesizer is a kind of most basic synthesis unit, involves higher frequency section in millimeter, traditional plane is closed
It is significantly increased at the loss with conventional metals waveguide composite structure itself, influences combined coefficient.
Summary of the invention
The purpose of the present invention is to provide a kind of machining accuracy height, loss is small, integrated level is high, convenient for the micro- based on silicon of assembly
The millimeter wave radial direction multipath power distributor of machining.
The technical solution for realizing the aim of the invention is as follows: a kind of millimeter wave radial direction multichannel function based on micromachining processing
Rate distributor, entire distributor are made of upper layer silicon wafer and lower layer's silicon wafer, and the upper layer silicon wafer and lower layer's silicon wafer pass through micromechanics
The mode of bonding connects；
Upper layer silicon wafer includes a higher mode circular waveguide input transmission line, the concentric radial waveguide upper piece with circular waveguide, number
A output transmission waveguide upper piece and several output rectangular waveguide mouths；The input higher mode circular waveguide input transmission line and radial direction
The center of waveguide upper piece is directly connected to；Radial distribution is presented in the output transmission waveguide upper piece centered on circular waveguide；
Lower layer's silicon wafer includes a cylinder boss, the radial waveguide bottom sheet concentric with circular waveguide, several output transmission waveguides
Bottom sheet；The cylinder boss is in the center of radial waveguide bottom sheet, just positioned at higher mode circular waveguide input transmission line
Lower section；The output transmission waveguide bottom sheet is radially distributed with cylinder boss center.
Compared with prior art, remarkable advantage of the invention are as follows: (1) present invention is passed using higher mode circular waveguide as input
Defeated line, rectangular waveguide realize any road multipath power distributor as output transmission line；(2) silicon wafer at the middle and upper levels of the invention is under
Layer silicon wafer is all made of silicon wet etching or dry plasma corrosion technology carries out deep silicon etching, forms the wave-guide cavity wave of silicon face
Structure；(3) upper layer silicon wafer and lower layer's silicon wafer are combined into one using micromechanics bonding techniques；Since the precision of micromachining processing can
To reach micron order, therefore existing similar scheme is compared, the machining accuracy of power splitter can be significantly improved, reduce power splitter
Insertion loss；Meanwhile using the technique of micromachining processing, manufacturing cost is lower；It is subsequent to use the side that filled by micro-group
Formula assembly, realizes high integrated level.
Detailed description of the invention
Fig. 1 is the schematic diagram of internal structure of the present invention.
Fig. 2 (a), Fig. 2 (b), Fig. 2 (c) are top view of the invention, side view and tomograph.
Fig. 3 is the standing-wave ratio curve graph of the embodiment of the present invention.
Fig. 4 is the insertion loss curve graph of the embodiment of the present invention.
Specific embodiment
(a), Fig. 2 (b), Fig. 2 (c) are shown as shown in Figure 1, Figure 2, a kind of millimeter wave radial direction multichannel function based on micromachining processing
Rate distributor involves the above frequency range suitable for millimeter, and entire distributor is made of upper layer silicon wafer 1 and lower layer's silicon wafer 2, the upper layer
Silicon wafer 1 and lower layer's silicon wafer 2 form complete distributor in such a way that micromechanics is bonded；
Upper layer silicon wafer 1 include a higher mode circular waveguide input transmission line 3, the radial waveguide upper piece 4 concentric with circular waveguide,
Several output transmission waveguides upper piece 5, several output rectangular waveguide mouths 6；The input higher mode circular waveguide input transmission line 3 is along column
The Z-direction of coordinate system is arranged, and is directly connected to the center of radial waveguide upper piece 4；Several output transmission waveguides upper piece 5 are along r
Radial distribution is presented in direction centered on circular waveguide；
Lower layer's silicon wafer 2 includes a cylinder boss 7, the radial waveguide bottom sheet 8 concentric with circular waveguide, radial waveguide bottom sheet 8
Around be evenly arranged with several output waveguide transmission line bottom sheet 9 along the direction r.The cylinder boss 7 is in radial waveguide
The center of bottom sheet, positioned at the underface of higher mode circular waveguide input transmission line 3.
It inputs circular waveguide mouth 3 and all exports rectangular waveguide mouth 6 on the same surface of distributor.
The operating mode of the circular waveguide of higher mode circular waveguide input transmission line 3 is TM01 mould.
The operating mode of the circular waveguide of higher mode circular waveguide input transmission line 3 is TE01 mould.
Upper layer silicon wafer and lower layer's silicon wafer are all made of silicon wet etching or dry plasma corrosion technology carries out deep silicon etching,
Form the wave-guide cavity wave structure of silicon face.
It is identical as the output quantity of rectangular waveguide mouth 6 to export transmission waveguide upper piece 5, output rectangular waveguide mouth 6 is arranged right
5 end of transmission waveguide upper piece should be exported.
It is identical as output 9 quantity of transmission waveguide bottom sheet to export transmission waveguide upper piece 5, position is corresponding.
Output transmission waveguide upper piece 5 is evenly distributed on 4 periphery of radial waveguide upper piece.
Output transmission waveguide bottom sheet 9 is evenly distributed on 8 periphery of radial waveguide bottom sheet.
Upper layer silicon wafer and lower layer's silicon wafer are combined into one using micromechanics bonding techniques, can form complete radial waveguide structure
With N root output waveguide transmission line, and in N number of output waveguide mouth of the above chip architecture in waveguide transmission line outer end as the defeated of power splitter
Out.
In finally formed power splitter, N number of output waveguide transmission line is all connected with the extension of radial waveguide, adjacent output
Angle between waveguide transmission line is θ=360/N, and wherein N can be equal to 2, or any integer greater than 2.
The present invention is furture elucidated with reference to the accompanying drawings and examples.
Embodiment
A kind of radial No. 8 power dividers of the W-waveband based on micromachining processing, internal structure are as shown in Figure 1.Wherein
Input port is circular waveguide transmission line of the work under TM01 mode, and cylindrical convex realizes impedance matching, most through radial waveguide
The output of 8 road rectangular waveguide mouths is realized eventually.Distributor by upper and lower two panels structure composition, upper and lower two chip architecture be all made of with a thickness of
The high resistant silicon wafer of 0.8mm is substrate material, forms upper piece waveguide cavity configuration and bottom sheet waveguide cavity by plasma etching technology
Structure is sputtered, plating metal layer process in upper layer of silicon waveguide cavity configuration and lower layer's silicon waveguide cavity configuration, finally by micro-
Upper layer silicon wafer and lower layer's silicon wafer are combined into one by mechanically link technique, realize complete No. 8 power divider.It should be based on silicon microcomputer
The radial No. 8 power divider sizes of the W-waveband of tool processing are only 20mm × 20mm × 0.8mm, and subsequent assembly use passes through micro-group
High integrated level may be implemented in the mode of dress.
Result such as Fig. 3 of the radial No. 8 power divider Electromagnetic Simulations of the W-waveband based on micromachining processing of the present embodiment
With shown in Fig. 4, wherein Fig. 3 is the simulation result diagram for exporting standing wave, and standing wave simulation result is exported in the frequency band of 90~100GHz
Less than 1.2.Fig. 4 is the simulation result diagram of interport isolation, is less than in the frequency in-band insertion loss simulation result of 90~100GHz
0.2dB。
Claims (9)
1. a kind of millimeter wave radial direction multipath power distributor based on micromachining processing, which is characterized in that entire distributor by
Upper layer silicon wafer (1) and lower layer's silicon wafer (2) composition, the upper layer silicon wafer (1) and lower layer's silicon wafer (2) are in such a way that micromechanics is bonded
Connection；
Upper layer silicon wafer (1) includes a higher mode circular waveguide input transmission line (3), the concentric radial waveguide upper piece with circular waveguide
(4), several output transmission waveguides upper piece (5) and several output rectangular waveguide mouths (6)；The input higher mode circular waveguide input
Transmission line (3) and the center of radial waveguide upper piece (4) are directly connected to；During the output transmission waveguide upper piece (5) with circular waveguide is
The heart is radially distributed；
Lower layer's silicon wafer (2) includes a cylinder boss (7), the radial waveguide bottom sheet (8) concentric with circular waveguide, several output transmission
Waveguide bottom sheet (9)；The cylinder boss (7) is in the center of radial waveguide bottom sheet, is located at higher mode circular waveguide and inputs
The underface of transmission line (3)；The output transmission waveguide bottom sheet (9) is radially distributed with cylinder boss center (7).
2. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In input circular waveguide mouth (3) and all output rectangular waveguide mouth (6) are on the same surface of distributor.
3. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In the operating mode of the circular waveguide of higher mode circular waveguide input transmission line (3) is TM01 mould.
4. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In the operating mode of the circular waveguide of higher mode circular waveguide input transmission line (3) is TE01 mould.
5. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In upper layer silicon wafer (1) and lower layer's silicon wafer (2) are all made of silicon wet etching or dry plasma corrosion technology progress deep silicon quarter
Erosion, forms the wave-guide cavity wave structure of silicon face.
6. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In output transmission waveguide upper piece (5) is identical as the output quantity of rectangular waveguide mouth (6), and output rectangular waveguide mouth (6) is arranged right
Transmission waveguide upper piece (5) end should be exported.
7. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In output transmission waveguide upper piece (5) is identical as output transmission waveguide bottom sheet (9) quantity.
8. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In output transmission waveguide upper piece (5) is evenly distributed on radial waveguide upper piece (4) periphery.
9. the millimeter wave radial direction multipath power distributor according to claim 1 based on micromachining processing, feature exist
In output transmission waveguide bottom sheet (9) is evenly distributed on radial waveguide bottom sheet (8) periphery.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910690193.0A CN110380178B (en) | 2019-07-29 | 2019-07-29 | Millimeter wave radial multi-path power divider based on silicon micromachining |
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| CN201910690193.0A CN110380178B (en) | 2019-07-29 | 2019-07-29 | Millimeter wave radial multi-path power divider based on silicon micromachining |
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| CN110380178A true CN110380178A (en) | 2019-10-25 |
| CN110380178B CN110380178B (en) | 2021-07-13 |
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| JP2003163509A (en) * | 2001-11-28 | 2003-06-06 | Murata Mfg Co Ltd | Dielectric line non-reciprocal circuit element and radio device |
| CN1669177A (en) * | 2002-06-27 | 2005-09-14 | 微制造公司 | Miniature RF and microwave components and methods for fabricating such components |
| US7385462B1 (en) * | 2005-03-18 | 2008-06-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Wideband radial power combiner/divider fed by a mode transducer |
| CN102509840A (en) * | 2011-10-31 | 2012-06-20 | 华南理工大学 | High-isolation radial power synthesis amplifier with broadband air micro-strips |
| CN104051835A (en) * | 2014-07-04 | 2014-09-17 | 中国电子科技集团公司第五十四研究所 | Millimeter wave radial waveguide space power allocation/synthesizer |
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-
2019
- 2019-07-29 CN CN201910690193.0A patent/CN110380178B/en active Active
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| US7385462B1 (en) * | 2005-03-18 | 2008-06-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Wideband radial power combiner/divider fed by a mode transducer |
| CN102509840A (en) * | 2011-10-31 | 2012-06-20 | 华南理工大学 | High-isolation radial power synthesis amplifier with broadband air micro-strips |
| CN104051835A (en) * | 2014-07-04 | 2014-09-17 | 中国电子科技集团公司第五十四研究所 | Millimeter wave radial waveguide space power allocation/synthesizer |
| JP2016040858A (en) * | 2014-08-12 | 2016-03-24 | 日本高周波株式会社 | Waveguide type electric power synthesizing/distributing unit |
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