CN109301422A - Model filters power splitter based on half module substrate integrated wave guide - Google Patents
Model filters power splitter based on half module substrate integrated wave guide Download PDFInfo
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- CN109301422A CN109301422A CN201811005023.6A CN201811005023A CN109301422A CN 109301422 A CN109301422 A CN 109301422A CN 201811005023 A CN201811005023 A CN 201811005023A CN 109301422 A CN109301422 A CN 109301422A
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- module substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract
The invention proposes a kind of model filters power splitters based on half module substrate integrated wave guide; using substrate integration wave-guide rectangular cavity and half module substrate integrated wave guide rectangular cavity as fundamental resonance unit; magnetic coupling is realized by windowing between adjacent rectangle chamber; the realization of S type groove is opened to be electrically coupled; there is bridging isolation resistance between IIth rank half module substrate integrated wave guide rectangular cavity opening; lower surface metal conductive layer and opening corresponding position are provided with the line of rabbet joint, and input/output terminal uses microstrip line-coplanar waveguide structure.Substrate integration wave-guide rectangular cavity includes the dielectric substrate that upper and lower surface is covered with metal conducting layer, and is evenly distributed with the metal throuth hole through upper and lower metal conducting layer along cavity edge on dielectric substrate；Half module substrate integrated wave guide rectangular cavity is divided to obtain by substrate integration wave-guide rectangular cavity along magnetic wall.Structure of the invention is compact, improves the isolation characteristic and Out-of-band rejection performance of model filters power splitter.
Description
Technical field
The present invention relates to microwave passive component technology, especially a kind of filtering function based on half module substrate integrated wave guide point
Device.
Background technique
With the development of microwave and millimeter-wave technology, Modern Communication System proposes higher want to integrated circuit dimensions
It asks, integrated, the miniaturization of microwave component become research hotspot and trend in recent years.Filter and power splitter are all that microwave is logical
Important component part in letter system.In pursuing miniaturization process, filter and power splitter are fused together, and both can reduce
Circuit size reduces processing cost, and can reduce insertion loss, has catered to the trend of modern integrated circuits development.
Substrate integration wave-guide is a kind of novel microwave millimeter wave transmission structure proposed in recent years, it have high-quality because
Number, low-loss, small in size, light-weight and microstrip line the advantages that being easily integrated, can realize high-performance integrated micro milli using it
Metric wave device, therefore also there are more and more articles in relation to chip integrated waveguide power distributor to be published.Such as document 1 (Wang,
X.,and Zhu,X.W.:‘Quarter-mode circular cavity substrate integrated waveguide
filtering power divider with via-holes perturbation’,Electron.Lett.,2017,53,
(6), pp.434-436) a kind of model filters power splitter based on substrate integration wave-guide circular cavity is proposed, but the power splitter does not have
Consider the isolation characteristic of filter, therefore limits the practical application of the model filters power splitter.
Summary of the invention
It is an object of the invention to propose a kind of model filters power splitter based on half module substrate integrated wave guide.
Realize technical solution of the invention are as follows: a kind of model filters power splitter based on half module substrate integrated wave guide, including
The fundamental resonance unit and input/output structure that substrate integration wave-guide rectangular cavity and half module substrate integrated wave guide rectangular cavity are constituted,
The fundamental resonance unit that the substrate integration wave-guide rectangular cavity and half module substrate integrated wave guide rectangular cavity are constituted specifically includes: I
Rank substrate integration wave-guide rectangular cavity, the IIth rank half module substrate integrated wave guide rectangular cavity, the IIIth rank half module substrate integrated wave guide rectangle
Chamber and the IVth rank half module substrate integrated wave guide rectangular cavity, the fundamental resonance unit is about I rank substrate integration wave-guide rectangle
The long side middle line of chamber is symmetrical, and the IIth rank half module substrate integrated wave guide rectangular cavity is located at I rank substrate integration wave-guide rectangular cavity
Lower section, the IVth rank half module substrate integrated wave guide rectangular cavity is located at left and right sides of I rank substrate integration wave-guide rectangular cavity, the IIIth rank
Half module substrate integrated wave guide rectangle is located at the lower section of the IVth rank half module substrate integrated wave guide rectangular cavity, I rank substrate integration wave-guide
Rectangular cavity is connect by opening coupling window c1 with the IIth rank half module substrate integrated wave guide rectangular cavity, the IIth rank half module substrate integrated wave guide
Rectangular cavity is connect by opening coupling window c2 with the IIIth rank half module substrate integrated wave guide rectangular cavity, the IIIth rank half module substrate integrated wave guide
Rectangular cavity is connect by opening coupling window c3 with the IVth rank half module substrate integrated wave guide rectangular cavity, the IVth rank half module substrate integrated wave guide
Rectangular cavity is connect by opening S type groove with I rank substrate integration wave-guide rectangular cavity；The input/output structure is that microstrip line-is coplanar
Waveguiding structure, including signal input microstrip line and signal export microstrip line, and the signal input microstrip line is integrated in I rank substrate
Waveguide Rectangular chamber long side center is coupled by the line of rabbet joint with I rank substrate integration wave-guide rectangular cavity, the IVth rank half-module chip collection
It is coupled by the line of rabbet joint with one end that signal exports microstrip line at Waveguide Rectangular chamber.
Preferably, the substrate integration wave-guide rectangular cavity includes the dielectric substrate that upper and lower surface is covered with metal conducting layer,
And the metal throuth hole through upper and lower metal conducting layer is evenly distributed with along cavity edge on dielectric substrate；The half-module chip is integrated
Waveguide Rectangular chamber is divided to obtain by substrate integration wave-guide rectangular cavity along magnetic wall.
Preferably, isolation resistance is bridged between two the IIth rank half module substrate integrated wave guide rectangular cavity openings, and in following table
Face metal conducting layer and opening corresponding position are provided with the line of rabbet joint.
Preferably, the signal input microstrip line and signal output microstrip line are all made of 50 ohm microstrips.
Preferably, the position of output port and input port coupling the line of rabbet joint, output port coupling the line of rabbet joint length according to
The external sort factor of model filters power splitter determines that the positions and dimensions of coupling window c1, c2, c3 and S type groove can be respectively by I
Rank substrate integration wave-guide rectangular cavity and the IIth rank half module substrate integrated wave guide rectangular cavity, the IIth rank half module substrate integrated wave guide rectangle
Chamber and the IIIth rank half module substrate integrated wave guide rectangular cavity, the IIIth rank half module substrate integrated wave guide rectangular cavity and the IVth rank half-module chip
Between integrated waveguide rectangular cavity and I rank substrate integration wave-guide rectangular cavity and the IVth rank half module substrate integrated wave guide rectangular cavity
The coefficient of coup determines.
Compared with prior art, the present invention its remarkable advantage are as follows: 1) present invention is using half module substrate integrated wave guide design filter
Wave power splitter has the characteristics that small in size, loss is low, quality factor are high and are easily integrated；2) present invention is using in half-module chip
Integrated waveguide opening bridging resistance and the mode for being provided with the line of rabbet joint with opening corresponding position in lower surface metal conductive layer,
Improve the isolation characteristic of the model filters power splitter；3) present invention introduces two transmission zeros using cross-linked mode, improves
The selection characteristic of the model filters power splitter.
Further detailed description is done to the present invention with reference to the accompanying drawing.
Detailed description of the invention
Fig. 1 is top layer domain of the invention.
Fig. 2 is bottom domain of the invention.
Fig. 3 is schematic diagram of the top layer domain with size indication of the invention.
Fig. 4 is schematic diagram of the bottom domain with size indication of the invention.
Fig. 5 is schematic three dimensional views of the invention.
Fig. 6 is the frequency response simulation curve schematic diagram of model filters power splitter in embodiment.
Specific embodiment
The present invention will be further explained with reference to the accompanying drawings and examples.
A kind of model filters power splitter based on half module substrate integrated wave guide, including substrate integration wave-guide rectangular cavity and half-module chip
The fundamental resonance unit and input/output structure that integrated waveguide rectangular cavity is constituted, the substrate integration wave-guide rectangular cavity and half module
The fundamental resonance unit that substrate integration wave-guide rectangular cavity is constituted specifically includes: I rank substrate integration wave-guide rectangular cavity I, the IIth rank
Half module substrate integrated wave guide rectangular cavity II, the IIIth rank half module substrate integrated wave guide rectangular cavity III and the IVth rank half-module chip are integrated
Waveguide Rectangular chamber IV, the fundamental resonance unit is symmetrical about the long side middle line of I rank substrate integration wave-guide rectangular cavity I,
IIth rank half module substrate integrated wave guide rectangular cavity II is located at the lower section of I rank substrate integration wave-guide rectangular cavity I, the IVth rank half module base
Piece integrated waveguide rectangular cavity IV is located at left and right sides of I rank substrate integration wave-guide rectangular cavity I, the IIIth rank half module substrate integrated wave guide
Rectangle is located at the lower section of the IVth rank half module substrate integrated wave guide rectangular cavity IV, and I is by opening coupling for I rank substrate integration wave-guide rectangular cavity
It closes window c1 to connect with the IIth rank half module substrate integrated wave guide rectangular cavity II, the IIth rank half module substrate integrated wave guide rectangular cavity is by opening
Coupling window c2 is connect with the IIIth rank half module substrate integrated wave guide rectangular cavity III, and the IIIth rank half module substrate integrated wave guide rectangular cavity passes through
It opens coupling window c3 to connect with the IVth rank half module substrate integrated wave guide rectangular cavity IV, the IVth rank half module substrate integrated wave guide rectangular cavity IV
It is connect by opening S type groove 2 with I rank substrate integration wave-guide rectangular cavity I；The input/output structure is microstrip line-co-planar waveguide
Structure, including signal input microstrip line 6 and signal export microstrip line 7, and the signal input microstrip line 6 is integrated in I rank substrate
Waveguide Rectangular chamber I long side center is coupled by line of rabbet joint s1 with I rank substrate integration wave-guide rectangular cavity I, the IVth rank half module base
Piece integrated waveguide rectangular cavity IV is coupled by line of rabbet joint s2 with one end that signal exports microstrip line 7.
In further embodiment, the substrate integration wave-guide rectangular cavity includes that upper and lower surface is covered with metal conducting layer 9
Dielectric substrate 8, and be evenly distributed with the metal throuth hole 1 through upper and lower metal conducting layer along cavity edge on dielectric substrate；Institute
It states half module substrate integrated wave guide rectangular cavity and divides to obtain along magnetic wall by substrate integration wave-guide rectangular cavity.
In further embodiment, bridging isolation electricity between two the IIth rank half module substrate integrated wave guide rectangular cavity II openings
Resistance 3, and lower surface metal conductive layer 9 and opening corresponding position are provided with the line of rabbet joint 5.
In further embodiment, the signal input microstrip line 6 and signal output microstrip line 7 are all made of 50 ohm microstrips
Line.
In further embodiment, the position of output port and input port couple line of rabbet joint s1, output port coupling slot
The length of line s2 according to the external sort factor of model filters power splitter determine, couple window c1, c2, c3 and S type groove 2 position and
Size can be respectively by I rank substrate integration wave-guide rectangular cavity I and the IIth rank half module substrate integrated wave guide rectangular cavity II, the IIth rank half
Mould substrate integration wave-guide rectangular cavity II and the IIIth rank half module substrate integrated wave guide rectangular cavity III, the IIIth rank half module substrate integrated wave guide
Rectangular cavity III and the IVth rank half module substrate integrated wave guide rectangular cavity IV and I rank substrate integration wave-guide rectangular cavity I and the IVth rank
Half module substrate integrated wave guide rectangular cavity IV) between the coefficient of coup determine.
Embodiment 1
As shown in Figure 1, Figure 2, Figure 5, a kind of model filters power splitter based on half module substrate integrated wave guide, including substrate integrate wave
Lead fundamental resonance unit, input/output structure that rectangular cavity and half module substrate integrated wave guide rectangular cavity are constituted.
Wherein, the substrate integration wave-guide rectangular cavity includes the dielectric substrate 8 that upper and lower surface is covered with metal conducting layer 9,
And it is evenly distributed with the metal throuth hole 1 through upper and lower metal conducting layer along cavity edge on dielectric substrate, metal throuth hole diameter is
0.5mm, spacing is 1mm between hole；The half module substrate integrated wave guide rectangular cavity is by substrate integration wave-guide rectangular cavity along magnetic wall point
It cuts to obtain.The fundamental resonance unit that the substrate integration wave-guide rectangular cavity and half module substrate integrated wave guide rectangular cavity are constituted specifically wraps
Include: I rank substrate integration wave-guide rectangular cavity, the IIth rank half module substrate integrated wave guide rectangular cavity, the IIIth rank half-module chip integrate wave
Lead rectangular cavity and the IVth rank half module substrate integrated wave guide rectangular cavity.The fundamental resonance unit integrates wave about I rank substrate
The middle line for leading rectangular cavity is symmetrical, and the IIth rank half module substrate integrated wave guide rectangular cavity is located at I rank substrate integration wave-guide rectangle
The lower section of chamber, the IVth rank half module substrate integrated wave guide rectangular cavity are located at left and right sides of I rank substrate integration wave-guide rectangular cavity, and the IIIth
Rank half module substrate integrated wave guide rectangle is located at the lower section of the IVth rank half module substrate integrated wave guide rectangular cavity.I rank substrate integrates wave
It leads rectangular cavity to connect by opening coupling window c1 with the IIth rank half module substrate integrated wave guide rectangular cavity, the IIth rank half-module chip integrates wave
It leads rectangular cavity to connect by opening coupling window c2 with the IIIth rank half module substrate integrated wave guide rectangular cavity, the IIIth rank half-module chip integrates wave
It leads rectangular cavity to connect by opening coupling window c3 with the IVth rank half module substrate integrated wave guide rectangular cavity, the IVth rank half-module chip integrates wave
Rectangular cavity is led to connect by opening S type groove 2 with I rank substrate integration wave-guide rectangular cavity.The input/output structure is microstrip line-
Coplanar waveguide structure, the signal input microstrip line 6 and signal output microstrip line 7 are all made of 50 ohm microstrips, micro-strip line width
Spend wmsFor 1.6mm, the signal input microstrip line 6 passes through the line of rabbet joint in I rank substrate integration wave-guide rectangular cavity long side center
S1 is coupled with I rank substrate integration wave-guide rectangular cavity, and the IVth rank half module substrate integrated wave guide rectangular cavity passes through line of rabbet joint s2 and signal
Export one end coupling of microstrip line 7.
Isolation resistance 8 is bridged between the IIth rank half module substrate integrated wave guide rectangular cavity opening, isolation resistance 8 is apart from square
The distance t of shape cavity edgerFor 6mm, resistance is 500 Ω, is arranged in lower surface metal conductive layer 9 and opening corresponding position
There are the line of rabbet joint 5, length lgFor 10mm, width wgFor 0.6mm, the isolation characteristic of model filters power splitter output port is improved.
S type groove 2 is opened in metal surface up and down between the IVth rank half module rectangular cavity and I rank rectangular cavity, S type groove 2
Inner ring diameter D1For 2.1mm, race diameter D2For 2.35mm, and a pair of of realization of plated-through hole 4 is set and is electrically coupled, using intersection
The mode of coupling realizes band, and there are two transmission zeros outside, improve the Out-of-band rejection performance of model filters power splitter.
As shown in Figure 3, Figure 4, the port 2 of the model filters power splitter and the position of port 3 and input port couple the line of rabbet joint
The length that s1, output port couple line of rabbet joint s2 can be determined by external sort factor, in output microstrip line center and input microstrip line
The distance w of the heartoFor 17mm, line of rabbet joint s1 length ls1For 4mm, width ws1For 0.5mm, line of rabbet joint s2 length lsFor 5mm, width wsFor
0.5mm；The positions and dimensions for coupling window c1, c2, c3 and S type groove 2 can be respectively by I rank and the IIth rank, the IIth rank and the
The coefficient of coup between III rank, the IIIth rank and the IVth rank and I rank and the IVth rank resonant cavity determines, couples the width of window c1
wc1For 2.5mm, with I rank rectangle cavity edge distance tc1For 6mm, the width w of window c2 is coupledc2For 4mm, with the IIth rank square
The distance t of shape cavity edgec2For 2.5mm, window c3 and the IIIth rank rectangle cavity edge distance t is coupledc3For 8.15mm.
The dielectric substrate material of the model filters power splitter selects Rogers RT5880, relative dielectric constant εrIt is 2.2, damage
Consuming angle tangent tan θ is 0.0009, thickness h 0.508mm.
In the present embodiment, the specific size of the model filters power splitter are as follows: the long w of I rank rectangular cavity broadside1For 20mm, the IIth
The long w of rank half module rectangular cavity broadside2For 9.7mm, the IIIth long w of rank half module rectangular cavity broadside3For 10mm, the IVth rank half module rectangular cavity is wide
Side length w4For 10mm, the long side length l of quadravalence rectangular cavity is 10mm.General plane size includes the microstrip line 56mm* of input and output
34mm。
As shown in fig. 6, the centre frequency of model filters power splitter is 10.7GHz, bandwidth 0.8GHz, insertion loss S21 are
4.3dB, S31 4.3dB；Isolation reaches 20dB or more in passband, and it is precipitous that passband ends edge, in frequency point 9.85GHz and
There are two transmission zeros by 10.75GHz.
Claims (5)
1. a kind of model filters power splitter based on half module substrate integrated wave guide, which is characterized in that including substrate integration wave-guide rectangular cavity
The fundamental resonance unit and input/output structure constituted with half module substrate integrated wave guide rectangular cavity, the substrate integration wave-guide square
The fundamental resonance unit that shape chamber and half module substrate integrated wave guide rectangular cavity are constituted specifically includes: I rank substrate integration wave-guide rectangle
Chamber (I), the IIth rank half module substrate integrated wave guide rectangular cavity (II), the IIIth rank half module substrate integrated wave guide rectangular cavity (III) and
IV rank half module substrate integrated wave guide rectangular cavity (IV), the fundamental resonance unit is about I rank substrate integration wave-guide rectangular cavity (I)
Long side middle line it is symmetrical, the IIth rank half module substrate integrated wave guide rectangular cavity (II) is located at I rank substrate integration wave-guide rectangle
The lower section of chamber (I), the IVth rank half module substrate integrated wave guide rectangular cavity (IV) are located at I rank substrate integration wave-guide rectangular cavity (I) left side
Right two sides, the IIIth rank half module substrate integrated wave guide rectangle are located at the lower section of the IVth rank half module substrate integrated wave guide rectangular cavity (IV),
I rank substrate integration wave-guide rectangular cavity (I) is by opening coupling window c1 and the IIth rank half module substrate integrated wave guide rectangular cavity (II) even
It connects, the IIth rank half module substrate integrated wave guide rectangular cavity (II) is by opening coupling window c2 and the IIIth rank half module substrate integrated wave guide rectangle
Chamber (III) connection, the IIIth rank half module substrate integrated wave guide rectangular cavity (II) are integrated by opening coupling window c3 and the IVth rank half-module chip
Waveguide Rectangular chamber (IV) connection, the IVth rank half module substrate integrated wave guide rectangular cavity (IV) is by opening S type groove (2) and I rank substrate
Integrated waveguide rectangular cavity (I) connection；The input/output structure is microstrip line-coplanar waveguide structure, including signal inputs micro-strip
Line (6) and signal output microstrip line (7), signal input microstrip line (6) are long in I rank substrate integration wave-guide rectangular cavity (I)
Side center is coupled by the line of rabbet joint (s1) with I rank substrate integration wave-guide rectangular cavity (I), the IVth rank half module substrate integrated wave guide
Rectangular cavity (IV) is coupled by the line of rabbet joint (s2) with one end of signal output microstrip line (7).
2. the model filters power splitter according to claim 1 based on half module substrate integrated wave guide, which is characterized in that the substrate
Integrated waveguide rectangular cavity includes the dielectric substrate (8) that upper and lower surface is covered with metal conducting layer (9), and along cavity on dielectric substrate
Edge is evenly distributed with the metal throuth hole (1) through upper and lower metal conducting layer；The half module substrate integrated wave guide rectangular cavity is by base
Piece integrated waveguide rectangular cavity is divided to obtain along magnetic wall.
3. the model filters power splitter according to claim 1 based on half module substrate integrated wave guide, which is characterized in that two the IIth
Rank half module substrate integrated wave guide rectangular cavity (II) opening between bridge isolation resistance (3), and lower surface metal conductive layer (9) with
Opening corresponding position is provided with the line of rabbet joint (5).
4. the model filters power splitter according to claim 1 based on half module substrate integrated wave guide, which is characterized in that the signal
Input microstrip line (6) and signal output microstrip line (7) are all made of 50 ohm microstrips.
5. the model filters power splitter according to claim 1 based on half module substrate integrated wave guide, which is characterized in that output port
Position and the input port coupling line of rabbet joint (s1), the output port coupling line of rabbet joint (s2) length according to the outside of model filters power splitter
Quality factor determine that the positions and dimensions for coupling window c1, c2, c3 and S type groove (2) can integrate wave by I rank substrate respectively
Lead rectangular cavity (I) and the IIth rank half module substrate integrated wave guide rectangular cavity (II), the IIth rank half module substrate integrated wave guide rectangular cavity
(II) with the IIIth rank half module substrate integrated wave guide rectangular cavity (III), the IIIth rank half module substrate integrated wave guide rectangular cavity (III) and the IVth
Rank half module substrate integrated wave guide rectangular cavity (IV) and I rank substrate integration wave-guide rectangular cavity (I) and the IVth rank half-module chip collection
It is determined at the coefficient of coup between Waveguide Rectangular chamber (IV).
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| CN201811005023.6A CN109301422B (en) | 2018-08-30 | 2018-08-30 | Half-mode substrate integrated waveguide-based filtering power divider |
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| CN201811005023.6A CN109301422B (en) | 2018-08-30 | 2018-08-30 | Half-mode substrate integrated waveguide-based filtering power divider |
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Cited By (6)
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| CN110350278A (en) * | 2019-07-15 | 2019-10-18 | 电子科技大学 | A kind of chip integrated waveguide power distributor with three rank band-pass responses |
| CN113113751A (en) * | 2021-04-13 | 2021-07-13 | 南通大学 | Balanced filtering power divider for self-isolation substrate integrated waveguide |
| CN113193323A (en) * | 2021-05-04 | 2021-07-30 | 南通大学 | Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider |
| CN114171876A (en) * | 2021-11-17 | 2022-03-11 | 西安电子科技大学重庆集成电路创新研究院 | Ka-band wide-stop-band filtering power divider |
| CN114171866A (en) * | 2021-11-17 | 2022-03-11 | 西安电子科技大学重庆集成电路创新研究院 | Glass-based ultra-wide stop band microwave filter and duplexer |
| CN116315553A (en) * | 2023-04-10 | 2023-06-23 | 电子科技大学 | Transition structure suitable for substrate integrated waveguide-microstrip |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350278A (en) * | 2019-07-15 | 2019-10-18 | 电子科技大学 | A kind of chip integrated waveguide power distributor with three rank band-pass responses |
| CN110350278B (en) * | 2019-07-15 | 2022-01-11 | 电子科技大学 | Substrate integrated waveguide power divider with third-order band-pass response |
| CN113113751A (en) * | 2021-04-13 | 2021-07-13 | 南通大学 | Balanced filtering power divider for self-isolation substrate integrated waveguide |
| CN113193323A (en) * | 2021-05-04 | 2021-07-30 | 南通大学 | Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider |
| CN113193323B (en) * | 2021-05-04 | 2021-10-29 | 南通大学 | Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider |
| CN114171876A (en) * | 2021-11-17 | 2022-03-11 | 西安电子科技大学重庆集成电路创新研究院 | Ka-band wide-stop-band filtering power divider |
| CN114171866A (en) * | 2021-11-17 | 2022-03-11 | 西安电子科技大学重庆集成电路创新研究院 | Glass-based ultra-wide stop band microwave filter and duplexer |
| CN114171876B (en) * | 2021-11-17 | 2023-02-28 | 西安电子科技大学重庆集成电路创新研究院 | Ka-band wide-stop-band filtering power divider |
| CN116315553A (en) * | 2023-04-10 | 2023-06-23 | 电子科技大学 | Transition structure suitable for substrate integrated waveguide-microstrip |
| CN116315553B (en) * | 2023-04-10 | 2024-04-12 | 电子科技大学 | Transition structure suitable for substrate integrated waveguide-microstrip |
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