CN105207622A - Low-loss terahertz frequency multiplier based on MEMS technology - Google Patents
Low-loss terahertz frequency multiplier based on MEMS technology Download PDFInfo
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- CN105207622A CN105207622A CN201510568997.5A CN201510568997A CN105207622A CN 105207622 A CN105207622 A CN 105207622A CN 201510568997 A CN201510568997 A CN 201510568997A CN 105207622 A CN105207622 A CN 105207622A
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Abstract
The invention discloses a low-loss terahertz frequency multiplier based on an MEMS technology. The low-loss terahertz frequency multiplier comprises an upper clamp, a lower clamp and a thin-film substrate which is arranged between the upper and lower clamps. The thin-film substrate is provided with an input waveguide structure, a gallium arsenide thin-film circuit structure, a thin-film chip channel and an output waveguide structure which form a terahertz signal transmission channel. The gallium arsenide thin-film circuit structure is arranged on the thin-film chip channel. One end of the thin-film chip channel is connected with the input waveguide structure, and the other end of the thin-film chip channel is connected with the output waveguide structure. The gallium arsenide thin-film circuit structure is compact in structure, high in degree of integration, suitable for the design of a high-frequency frequency multiplier and great in frequency multiplying performance. The low-loss terahertz frequency multiplier has characteristics of being low in cost, convenient for scale manufacturing and suitable for the design of the high-frequency frequency multiplier. Cavity machining adopts the MEMS technology, high-frequency performance and consistency of the frequency multiplier can be guaranteed by machining accuracy, and cost of metal clamp high-precision micromachining can be reduced.
Description
Technical field
The present invention relates to the technology of Terahertz frequency multiplier, particularly a kind of low-loss Terahertz frequency multiplier based on MEMS technology.
Technical background
Along with the continuous rising of Terahertz frequency multiplier operating frequency, the efficiency of frequency multiplier is subject to the restriction of various aspects, such as diode diffusion resistance, substrate loss and circuit fabrication precision etc.In order to solve the problem, Terahertz frequency multiplier based on GaAs technique is greatly developed, but because the cavity of assembling Terahertz circuit adopts the means of traditional ultraprecise machining to be difficult to reach the dimensional accuracy ± 5um of design, after assembling, circuit performance reduces greatly.Therefore Terahertz cavity machining accuracy still affects one of important factor of THz devices performance.
Traditional ultraprecise machining process adopts cutter to cut the means such as milling and realizes cavity plane and surface roughness processing, wherein more than about machining accuracy 10um and roughness 30nm.But when THz devices operating frequency is greater than 500GHz, cavity machining accuracy often requires the machining accuracy of 5um and the roughness of below 20nm.MEMS technology (Micro-Eletro-Mechanical-System and semiconductor packaging) merges microelectronics and precision machined technology, and silicon bulk fabrication precision can be controlled in below 2um.Therefore having more high-precision MEMS technology is the important technology solving current Terahertz cavity machining accuracy.
Summary of the invention
The object of the invention is to the deficiency overcoming existing micro-processing technology, provide a kind of low-loss Terahertz frequency multiplier based on MEMS technology, be applicable to the Terahertz frequency multiplier circuit of high band (being greater than 500GHz), can in the conforming performance improving frequency multiplier ensureing frequency multiplier simultaneously, operating frequency is high, be easy to manufacture, performance is good, has a good application prospect in Terahertz system.
Technical scheme of the present invention is as follows:
A kind of low-loss Terahertz frequency multiplier based on MEMS technology, it is characterized in that: comprise fixture, lower clamp and the film substrate between upper fixture and lower clamp, film substrate is provided with input waveguide structure, gallium arsenide film circuit structure, gallium arsenide film chip channel and output waveguide structure, gallium arsenide film circuit structure is positioned in gallium arsenide film chip channel, one end of gallium arsenide film chip channel connects input waveguide structure, the other end connects output waveguide structure, input waveguide structure, gallium arsenide film circuit structure, the structure that gallium arsenide film chip channel and output waveguide structure are formed and terahertz signal transmission channel.
Gallium arsenide film circuit structure comprises chip body, the first Liang Shi lead-in wire, the second Liang Shi lead-in wire, Terahertz Schottky diode is to, input coupling matching unit and export coupling matching unit, and the first Liang Shi lead-in wire, the second Liang Shi lead-in wire, Terahertz Schottky diode are to, input coupling matching unit and export coupling matching unit and be all placed on chip body, chip body is placed in gallium arsenide film chip channel by the first Liang Shi lead-in wire and the second Liang Shi lead-in wire, input coupling matching unit is set below the first Liang Shi lead-in wire, input coupling matching unit is connected with output coupling matching unit, Terahertz Schottky diode pair is provided with above first Liang Shi lead-in wire, Terahertz Schottky diode is to passing through input coupling matching unit and input waveguide anatomical connectivity, Terahertz Schottky diode is connected with output waveguide structure by exporting coupling matching unit, Terahertz Schottky diode is connected in film substrate by the first Liang Shi lead-in wire to form direct current and the loop of rf, one end that chip body is provided with input coupling matching unit is suspended in input waveguide structure, and chip body is provided with the one end exporting coupling matching unit and is suspended in output waveguide structure.
Described film substrate is gold-plated silica-base film substrate.
Described silica-base film substrate adopts a kind of technique representative in MEMS technology to receive the processing of means bulk silicon technological and produces, and its technological process is as follows: first, silicon-based substrates grows one deck silicon oxide layer as mask layer; Then, on mask layer, form the photoresist with figure by the mode of photoetching, wherein the silicon-based substrates mask layer that needs the position of cavity processed corresponding is exposed; Secondly, exposed mask layer is eroded by the method for dry corrosion, the silicon-based substrates of correspondence position is corroded by gaseous corrosion agent, obtain the degree of depth required by designing and shape, finally remaining mask layer is corroded by corrosive agent, this process does not have etching characteristic to silicon-based substrates, and finally left silicon-based substrates is carried out metallization plating operation by the mode of sputtering, forms the thick Ti/Cu/Au metal level of 3um at silicon substrate surface.
Described chip body is gallium arsenide film chip.
Described whole gallium arsenide film circuit structure does not adopt without external dc offsetfed, the opposing series configuration that Terahertz Schottky diode is right, suppress to realize even-order harmonic, whole circuit structure is simple, size is less, is conducive to circuit structure processing and promotes Terahertz frequency multiplier performance.
The manufacture craft of described gallium arsenide film chip and parts thereof selects the one in electron beam lithography, inductance coupling high reactive ion etching, molecular beam epitaxy, plasma enhanced chemical vapor deposition.
The described lower surface of upper fixture, between the upper surface of lower clamp and film substrate, be fixedly connected with location by shop bolt.
In order to realize being interconnected with other devices outside, after being fixedly connected with location, on all-in-one-piece, the two sides of fixture, lower clamp and film substrate are provided with flange plate structure.
The material of described upper fixture and lower clamp is metallic aluminium, or metallic copper.Wherein go up that fixture, lower clamp and middle silica-base film substrate are closed forms waveguiding structure and input waveguide structure, gallium arsenide film circuit path, output waveguide structure.The gallium arsenide film circuit structure loading Terahertz Schottky diode goes between cemented in place inside gallium arsenide film circuit path by the first Liang Shi; One end of gallium arsenide film circuit structure and input waveguide anatomical connectivity, the other end is connected with output waveguide structure, thus forms whole terahertz signal transmission channel.
The present invention adopts the micro-machined silica-base film substrate of MEMS technology, forms closed input and output waveguiding structure with upper lower clamp.Schottky diode on gallium arsenide film circuit structure adopts the structure of balance reverse parallel connection, is beneficial to and realizes clutter recognition.Gallium arsenide film circuit structure is fixed in thin film circuit passage via Liang Shi lead-in wire, be coupled into frequency multiplier structure Terahertz signal by input probe structure and produce harmonic signal through being loaded in the Schottky diode on thin film circuit, wherein useful harmonic signal result output matching construction unit and output probe structure export through output waveguide.
Beneficial effect of the present invention is as follows:
Gallium arsenide film circuit structure of the present invention has compact conformation, the feature that integrated level is high; Structure is applicable to high-frequency Design of frequency multiplier, and frequency doubling property is good.It is low that the present invention has cost, be convenient to the feature of scale manufacturing and applicable high-frequency Design of frequency multiplier: the cavity processing in the present invention adopts MEMS technology, the machining accuracy of 2um ensure that high frequency performance and the consistency of frequency multiplier well, and decreases the expense of metal fixture High Accuracy Microcomputer tool processing.
Accompanying drawing explanation
Fig. 1 is perspective view of the present invention;
Fig. 2 is the latter half structural representation of the present invention;
Fig. 3 is the latter half close-up schematic view of the present invention;
Fig. 4 is the structural representation of thin film chip of the present invention.
Wherein, Reference numeral is: fixture on 1 metal, 2 metal lower clamps, 3 silica-base film substrates, 4 input waveguide structures, 5 output waveguide structure, 6 gallium arsenide film circuit structures, 61 chip body, 62 first Liang Shi lead-in wires, 63 second Liang Shi lead-in wires, 64 Terahertz Schottky diodes pair, 65 input coupling matching unit, 66 export coupling matching unit, 7 flange plate structures, 8 shop bolts.
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1-2, a kind of low-loss Terahertz frequency multiplier based on MEMS technology, comprise fixture, lower clamp and the film substrate between upper fixture and lower clamp, film substrate is provided with input waveguide structure, gallium arsenide film circuit structure, gallium arsenide film chip channel and output waveguide structure, gallium arsenide film circuit structure is positioned in gallium arsenide film chip channel, one end of gallium arsenide film chip channel connects input waveguide structure, the other end connects output waveguide structure, input waveguide structure, gallium arsenide film circuit structure, the structure that gallium arsenide film chip channel and output waveguide structure are formed and terahertz signal transmission channel.
As shown in Figure 3-4, described gallium arsenide film circuit structure comprises chip body, the first Liang Shi lead-in wire, the second Liang Shi lead-in wire, Terahertz Schottky diode is to, input coupling matching unit and export coupling matching unit, and the first Liang Shi lead-in wire, the second Liang Shi lead-in wire, Terahertz Schottky diode are to, input coupling matching unit and export coupling matching unit and be all placed on chip body; Chip body is placed in gallium arsenide film chip channel by the first Liang Shi lead-in wire and the second Liang Shi lead-in wire, input coupling matching unit is set below the first Liang Shi lead-in wire, input coupling matching unit is connected with output coupling matching unit, Terahertz Schottky diode pair is provided with above first Liang Shi lead-in wire, Terahertz Schottky diode is to passing through input coupling matching unit and input waveguide anatomical connectivity, and Terahertz Schottky diode is connected with output waveguide structure by exporting coupling matching unit; One end that chip body is provided with input coupling matching unit is suspended in input waveguide structure, and chip body is provided with the one end exporting coupling matching unit and is suspended in output waveguide structure.
When said structure is applied to the Terahertz frequency tripler of 670GHz, its structure as shown in Figures 1 to 4.
Input waveguide structure 4 in the present embodiment in upper lower clamp, output waveguide structure 5 are obtained by the micro-processing technology processing of hypercompact close numerical control mill.
Described film substrate is gold-plated silica-base film substrate.
Described silica-base film substrate 3 adopts a kind of technique representative in MEMS technology to receive the processing of means bulk silicon technological and produces, and its technological process is as follows: first, silicon-based substrates grows one deck silicon oxide layer as mask layer; Then, on mask layer, form the photoresist with figure by the mode of photoetching, wherein the silicon-based substrates mask layer that needs the position of cavity processed corresponding is exposed; Secondly, exposed mask layer is eroded by the method for dry corrosion, the silicon-based substrates of correspondence position is corroded by gaseous corrosion agent, obtain the degree of depth required by designing and shape, finally remaining mask layer is corroded by corrosive agent, this process does not have etching characteristic to silicon-based substrates, and finally left silicon-based substrates is carried out metallization plating operation by the mode of sputtering, forms the thick Ti/Cu/Au metal level of 3um at silicon substrate surface.
Described chip body is gallium arsenide film chip.
The thickness of described gallium arsenide film chip is 15um, and length is 800um, and width is 200um; The surface gold-plating of gallium arsenide film chip, plated thickness is 3um, to ensure that terahertz signal transmits on thin film chip.
Described whole gallium arsenide film circuit structure does not adopt without external dc offsetfed, the opposing series configuration that Terahertz Schottky diode is right, suppress to realize even-order harmonic, whole circuit structure is simple, size is less, is conducive to circuit structure processing and promotes Terahertz frequency multiplier performance.
The manufacture craft of described gallium arsenide film chip and parts thereof selects the one in electron beam lithography, inductance coupling high reactive ion etching, molecular beam epitaxy, plasma enhanced chemical vapor deposition.
The described lower surface of upper fixture, between the upper surface of lower clamp and film substrate, be fixedly connected with location by shop bolt.
In order to realize being interconnected with other devices outside, after being fixedly connected with location, on all-in-one-piece, the two sides of fixture, lower clamp and film substrate are provided with flange plate structure.
The material of described upper fixture and lower clamp is aluminum, adopts Gold-plating technique to show to plate the layer gold of 4um after micro Process.
The gallium arsenide film circuit structure loading Schottky diode comprises gallium arsenide film chip and Schottky diode pair, gallium arsenide film chip two ends are respectively by four gauge points and silica-base film substrate alignment, gallium arsenide film circuit comprises Input matching construction unit and output matching construction unit, and Schottky tube to one end be connected to gallium arsenide film circuit constrained input coupling between, in addition one end by first Liang Shi lead-in wire be connected to gold-plated after silica-base film on to form direct current and the loop of rf.
As shown in Figure 4, described thin film chip 6 comprise chip body 61 and be placed in the first Liang Shi lead-in wire 62, second Liang Shi lead-in wire 63 on chip body 61, Terahertz Schottky diode to 64, input coupling matching unit 65 and export coupling matching unit 66.The both sides of described chip body 61 are placed in gallium arsenide film chip channel 7 respectively by the first Liang Shi lead-in wire 62 and the second Liang Shi lead-in wire 63, input coupling matching unit 65 is set below first Liang Shi lead-in wire, input coupling matching unit 65 is connected with output coupling matching unit 66, Terahertz Schottky diode is provided with to 64 above first Liang Shi lead-in wire 62, Terahertz Schottky diode 64 is connected with input waveguide structure 4 by input coupling matching unit 65, Terahertz Schottky diode is connected with output waveguide structure 5 by exporting coupling matching unit 66 64, Terahertz Schottky diode is connected in film substrate 3 to form direct current and the loop of rf by the second Liang Shi lead-in wire 63 64, one end that chip body 61 is provided with input coupling matching unit 65 is suspended in input waveguide structure 4, and chip body 64 is provided with the one end exporting coupling matching unit 66 and is suspended in output waveguide structure 5.
In the present embodiment, the manufacture craft of thin film chip 6 and parts thereof selects electron beam lithography to make.Thin film chip 7 area described in the present embodiment is 200um*800um, and thickness is 10um, and thin film chip 6 material is gallium arsenide film.
Claims (9)
1. the low-loss Terahertz frequency multiplier based on MEMS technology, it is characterized in that: comprise fixture, lower clamp and the film substrate between upper fixture and lower clamp, film substrate is provided with input waveguide structure, gallium arsenide film circuit structure, gallium arsenide film chip channel and output waveguide structure, gallium arsenide film circuit structure is positioned in gallium arsenide film chip channel, one end of gallium arsenide film chip channel connects input waveguide structure, the other end connects output waveguide structure, input waveguide structure, gallium arsenide film circuit structure, the structure that gallium arsenide film chip channel and output waveguide structure are formed and terahertz signal transmission channel.
2. the high-frequency interconnection structure of a kind of low parasitic inductance according to claim 1, it is characterized in that: described gallium arsenide film circuit structure comprises chip body, the first Liang Shi lead-in wire, the second Liang Shi lead-in wire, Terahertz Schottky diode is to, input coupling matching unit and export coupling matching unit, the first Liang Shi lead-in wire, the second Liang Shi lead-in wire, Terahertz Schottky diode are to, input coupling matching unit and export coupling matching unit and be all placed on chip body; Chip body is placed in gallium arsenide film chip channel by the first Liang Shi lead-in wire and the second Liang Shi lead-in wire, input coupling matching unit is set below the first Liang Shi lead-in wire, input coupling matching unit is connected with output coupling matching unit, Terahertz Schottky diode pair is provided with above first Liang Shi lead-in wire, Terahertz Schottky diode is to passing through input coupling matching unit and input waveguide anatomical connectivity, and Terahertz Schottky diode is connected with output waveguide structure by exporting coupling matching unit; One end that chip body is provided with input coupling matching unit is suspended in input waveguide structure, and chip body is provided with the one end exporting coupling matching unit and is suspended in output waveguide structure.
3. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 1, is characterized in that: described film substrate is gold-plated silica-base film substrate.
4. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 3, is characterized in that: the processing process of described silica-base film substrate is as follows:
First, silicon-based substrates grows one deck silicon oxide layer as mask layer;
Then, on mask layer, form the photoresist with figure by the mode of photoetching, wherein the silicon-based substrates mask layer that needs the position of cavity processed corresponding is exposed;
Secondly, exposed mask layer is eroded by the method for dry corrosion, and the silicon-based substrates of correspondence position is corroded by gaseous corrosion agent, obtains the degree of depth required by designing and shape;
Finally remaining mask layer is corroded by corrosive agent, this process does not have etching characteristic to silicon-based substrates, finally left silicon-based substrates is carried out metallization plating operation by the mode of sputtering, forms the thick Ti/Cu/Au metal level of 3um on silicon-based substrates surface.
5. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 2, is characterized in that: described chip body is gallium arsenide film chip.
6. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 5, is characterized in that: the manufacture craft of described gallium arsenide film chip selects electron beam lithography or inductance coupling high reactive ion etching or molecular beam epitaxy or plasma enhanced chemical vapor deposition.
7. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 1, it is characterized in that: the described lower surface of upper fixture, between the upper surface of lower clamp and film substrate, be fixedly connected with location by shop bolt.
8. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 7,, it is characterized in that: after being fixedly connected with location on all-in-one-piece the two sides of fixture, lower clamp and film substrate be provided with for the interconnective flange plate structure of other devices outside.
9. a kind of low-loss Terahertz frequency multiplier based on MEMS technology according to claim 1, it is characterized in that: the material of described upper fixture and lower clamp is aluminium, or is copper.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106100586A (en) * | 2016-06-06 | 2016-11-09 | 东南大学 | Doubler based on MEMS wideband phase detector |
| CN110311628A (en) * | 2019-06-14 | 2019-10-08 | 成都理工大学 | Based on the graphene even-order harmonic frequency multiplier and design method under direct current biasing |
| WO2021098064A1 (en) * | 2019-11-18 | 2021-05-27 | 东南大学 | Full-band terahertz quadruplicated frequency module |
| CN114709579A (en) * | 2022-04-06 | 2022-07-05 | 南京大学 | Waveguide package of on-chip integrated terahertz functional chip |
| CN114850548A (en) * | 2022-04-25 | 2022-08-05 | 成都四威高科技产业园有限公司 | Terahertz waveguide port burr removing process |
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2015
- 2015-09-09 CN CN201510568997.5A patent/CN105207622A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106100586A (en) * | 2016-06-06 | 2016-11-09 | 东南大学 | Doubler based on MEMS wideband phase detector |
| CN106100586B (en) * | 2016-06-06 | 2019-01-29 | 东南大学 | Frequency multiplier based on MEMS wideband phase detector |
| CN110311628A (en) * | 2019-06-14 | 2019-10-08 | 成都理工大学 | Based on the graphene even-order harmonic frequency multiplier and design method under direct current biasing |
| CN110311628B (en) * | 2019-06-14 | 2023-03-24 | 成都理工大学 | Graphene even harmonic frequency multiplier based on direct current bias and design method |
| WO2021098064A1 (en) * | 2019-11-18 | 2021-05-27 | 东南大学 | Full-band terahertz quadruplicated frequency module |
| CN114709579A (en) * | 2022-04-06 | 2022-07-05 | 南京大学 | Waveguide package of on-chip integrated terahertz functional chip |
| CN114709579B (en) * | 2022-04-06 | 2022-12-09 | 南京大学 | Waveguide package of on-chip integrated terahertz function chip |
| CN114850548A (en) * | 2022-04-25 | 2022-08-05 | 成都四威高科技产业园有限公司 | Terahertz waveguide port burr removing process |
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Application publication date: 20151230 |