CN104466316B - A kind of X-band defect ground structure half-modular substrate integral wave guide filter - Google Patents
A kind of X-band defect ground structure half-modular substrate integral wave guide filter Download PDFInfo
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- CN104466316B CN104466316B CN201310547844.3A CN201310547844A CN104466316B CN 104466316 B CN104466316 B CN 104466316B CN 201310547844 A CN201310547844 A CN 201310547844A CN 104466316 B CN104466316 B CN 104466316B
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Abstract
The present invention relates to a kind of X-band defect ground structure half-modular substrate integral wave guide filter, the wave filter includes：Dielectric substrate and the metal patch being arranged on dielectric substrate; wherein; multiple through holes are provided with dielectric substrate; metal patch includes relative input port microstrip line, output port microstrip line and the half module substrate integrated wave guide being connected respectively by micro-strip half module substrate integrated wave guide transition metal line with input port microstrip line and output port microstrip line in position, and half module substrate integrated wave guide has multiple individual defect ground structure units and nested defect ground structure unit and the hole communicated with the through hole of dielectric substrate.Beneficial effects of the present invention are：It is used as elementary cell by forming defect ground structure on half module substrate integrated wave guide, multi-level unit is cascaded into X-band defect ground structure half-modular substrate integral wave guide filter.With compact conformation, it is easy to mass produce, high yield rate, the characteristics of performance is stablized and is easy to the system integration.
Description
Technical field
The present invention relates to wireless communication technique field, more particularly to a kind of X-band defect ground structure-half-module chip are integrated
Waveguide filter.
Background technology
Microwave and millimeter wave bandpass filter is the significant components of communication system and radar system, and its function is in wireless receiving
Be particularly important in machine, in addition, in microwave band-pass filter or microwave and millimeter wave system many design problems key with
Core, such as frequency converter, frequency multiplier and multichannel communication multiple telecommunication.Electromagnetic spectrum is limited, it is necessary to distributed by different application；And
Wave filter both can be for limiting radiation of the high-power transmitter in regulation frequency range, again can be for preventing receiver by work
Make the interference beyond frequency band.Traditional microwave and millimeter wave metal waveguide and coated by dielectric metal waveguide can produce high-quality because
Number, low-loss, high performance bandpass filter, but this wave filter processes more complicated first, especially in microwave millimeter
Wave frequency section is, it is necessary at a relatively high machining accuracy；Secondly production cost costly because the price of metal waveguide and cavity is in itself
It is just very high；3rd is that this wave filter is bulky, it is difficult to obtain substantive application inside RF IC.Therefore, urgently
Need that high-performance, small volume, lightweight, quality factor are high, loss is small, the inexpensive and microwave and millimeter wave band logical filter that is easily integrated
Ripple device, in favor of the design of RF IC.
The content of the invention
It is existing to solve it is an object of the invention to provide a kind of X-band defect ground structure-half-modular substrate integral wave guide filter
There is the above-mentioned deficiency of technology.
The purpose of the present invention is to be achieved through the following technical solutions：
The invention provides a kind of X-band defect ground structure-half-modular substrate integral wave guide filter, the X-band defect
Structure-half-modular substrate integral wave guide filter is divided into three-decker, is from top to bottom metal patch, dielectric substrate and bottom surface
The coat of metal, multiple through holes that the side of the dielectric substrate of the half-modular substrate integral wave guide filter is set constitute half-module chip collection
Into the side wall of waveguide filter, the plurality of through hole is in several rows of row, and through hole is plated-through hole, is provided with the inwall of through hole
Copper plate, and connect metal patch and the coat of metal of bottom surface；The metal patch includes the relative input port micro-strip in position
Line, output port microstrip line and pass through micro-strip-half module substrate integrated wave guide transition metal line and input port microstrip line respectively
The half module substrate integrated wave guide connected with output port microstrip line, sets on the metal patch of half-modular substrate integral wave guide filter
There are multiple defect ground structures, and by the way of three-stage cascade, wherein centrally located primary defect ground structure unit is adopted
With nested mode, the defect ground structure positioned at both sides is individual defect ground structure unit.
It is preferred that, the individual defect ground structure unit includes two symmetrical frame-type with opening and is recessed, and two
The opening direction of frame-type depression is relative；The nested defect ground structure unit includes multiple nested individual defect ground structure lists
Member, and the nested defect ground structure unit is symmetrical structure.
It is preferred that, the number of the individual defect ground structure unit is two, of the nested defect ground structure unit
Number is one, and the nested defect ground structure unit is located at the centre of described two individual defect ground structure units.
It is preferred that, the X-band defect ground structure-half-modular substrate integral wave guide filter also includes being arranged at the medium
The coat of metal of the one side relative with metal patch on substrate.
It is preferred that, the through-hole wall is provided with copper plate.
It is preferred that, the sheet material of the dielectric substrate is Rogers's sheet material, and dielectric constant is 2.2, and sheet metal thickness is
0.254mm。
It is preferred that, the X-band defect ground structure-half-modular substrate integral wave guide filter is also wrapped in the medium base
The Gold plated Layer of piece and the metal patch.
Beneficial effects of the present invention are：By optionally removing surface metal on half module substrate integrated wave guide, formed
Defect ground structure.With defect ground structure as elementary cell, multi-level unit is cascaded into X-band X-band defect ground structure-half module base
Piece integral wave guide filter.Using the structure that two defect ground structures of different sizes are nested.In 7.5~10GHz, insertion is damaged
Consume 1.06dB~1.12dB, reflectance factor reached near -30dB, the suppression of second harmonic (15~20GHz) is reached 35dB with
On.Processed using ordinary printed circuit-board processes, size：29.5×9.00×0.33mm3, compared to the metal waveguide of same frequency range
Class wave filter, compact conformation, it is easy to mass produce, high yield rate, performance are stable.X-band defect ground structure-the half-module chip
Integral wave guide filter belongs to planar structure, it is easy to the system integration.
Brief description of the drawings
The present invention is described in further detail below according to accompanying drawing.
Fig. 1 is that the structure of X-band defect ground structure-half-modular substrate integral wave guide filter provided in an embodiment of the present invention is shown
It is intended to；
Fig. 2 is the structural representation of individual defect ground structure unit provided in an embodiment of the present invention；
Fig. 3 is the structural representation of nested defect ground structure unit provided in an embodiment of the present invention；
Fig. 4 is the emulation mould of X-band defect ground structure-half-modular substrate integral wave guide filter provided in an embodiment of the present invention
Intend design sketch.
In figure：
10th, dielectric substrate；20th, through hole；30th, metal patch；31st, micro-strip-half module substrate integrated wave guide transition metal line；
32nd, half module substrate integrated wave guide；33rd, nested defect ground structure unit；34th, individual defect ground structure unit；341st, frame-type is recessed.
Embodiment
In order to improve performance, the reduction X-band defect of X-band defect ground structure-half-modular substrate integral wave guide filter
The volume of structure-half-modular substrate integral wave guide filter, the invention provides a kind of X-band defect ground structure-half-module chip collection
Into waveguide filter.In the inventive solutions, by using slab construction and multiple hollowly construction units and
Nested dimples ground structure unit, improves the performance of X-band defect ground structure-half-modular substrate integral wave guide filter and reduces
The volume of X-band defect ground structure-half-modular substrate integral wave guide filter.To make the object, technical solutions and advantages of the present invention
It is clearer, the present invention is described in further detail by taking non-limiting embodiment as an example below.
As shown in figure 1, a kind of X-band defect ground structure-half-modular substrate integral wave guide filter of the embodiment of the present invention, should
X-band defect ground structure-half-modular substrate integral wave guide filter is divided into three-decker, is from top to bottom metal patch 30, medium
Substrate 10 and the coat of metal of bottom surface, it is multiple that the side of the dielectric substrate 10 of the half-modular substrate integral wave guide filter is set
Through hole 20 constitutes the side wall of half-modular substrate integral wave guide filter, and the plurality of through hole 10 is in several rows of row, and through hole 10 is metal
Change through hole, the inwall of through hole 10 is provided with copper plate, and connect metal patch 30 and the coat of metal of bottom surface；The metal patch
Piece 30 includes the relative input port microstrip line in position, output port microstrip line and integrated by micro-strip-half-module chip respectively
The half module substrate integrated wave guide 32 that waveguide transition metal wire 31 is connected with input port microstrip line and output port microstrip line, half
The metal patch 30 of mould substrate integral wave guide filter is provided with multiple defect ground structures, and by the way of three-stage cascade, its
In centrally located primary defect ground structure unit employ nested mode, the defect ground structure positioned at both sides lacks to be single
Fall into ground structure unit 34.
X-band defect ground structure-the half-modular substrate integral wave guide filter, the X-band defect ground structure-half-module chip collection
It is divided into three-decker into waveguide filter, is from top to bottom the coat of metal of metal patch 30, dielectric substrate 10 and bottom surface,
The two ends of half-modular substrate integral wave guide filter are respectively equipped with input port microstrip line, output port microstrip line, in half-module chip
Multiple through holes 20 that the side of the dielectric substrate 10 of integral wave guide filter is set constitute the side of half-modular substrate integral wave guide filter
Wall, the plurality of through hole 20 is in several rows of row, and through hole 20 is plated-through hole 20, and the inwall of through hole 20 is provided with copper plate,
And connect metal patch 30 and the coat of metal of bottom surface；The selectivity on the metal patch 30 of half-modular substrate integral wave guide filter
Be provided with multiple defect ground structures；And by the way of three-stage cascade；Wherein centrally located primary defect ground structure list
Member employs nested mode, and the defect ground structure positioned at both sides is individual defect ground structure unit 34.
Specifically, when defect ground structure is combined with half module substrate integrated wave guide technology, on conventional microstrip line
Defect ground structure be improved, it is easily applied on substrate integration wave-guide：As shown in Fig. 2 to traditional
Complementary open-loop resonator is improved, and two complementary open-loop resonators are removed into one, a single split ring list is reduced to
Member, and by this split ring center section metal removal, form two symmetrical frame-type depressions 341 with opening, and two
The opening direction of frame-type depression 341 is relative, so as to form a counterpart semi-ring, so as to change electromagnetic wave propagation, not only simplifies
Process, and meet performance requirement；Secondly, by the way of three-stage cascade, enhancing X-band defect ground structure-half module base
The passband and sideband characteristic of piece integral wave guide filter；As shown in figure 3, in order to further reduce the size, using two sizes
The nested mode of different units, i.e., nested defect ground structure unit 33 includes multiple nested individual defect ground structure units
34, and nested defect ground structure unit 33 is symmetrical structure.
X-band defect ground structure-half-modular substrate integral wave guide filter provided in an embodiment of the present invention passes through in half module base
Surface metal is optionally removed on piece integrated waveguide, defect ground structure is formed.It is multistage with defect ground structure as elementary cell
It is unit cascaded into X-band wave filter.Using the structure that two defect ground structures of different sizes are nested.As shown in figure 4,7.5
In~10GHz, insertion loss 1.06dB~1.12dB, reflectance factor is reached near -30dB, to second harmonic (15~20GHz)
Suppression reach more than 35dB.Processed using ordinary printed circuit-board processes, size：29.5×9.00×0.33mm3, compared to
With the metal waveguide class wave filter of frequency range, compact conformation, it is easy to mass produce, high yield rate, performance is stable.The X-band lacks
Fall into ground structure-half-modular substrate integral wave guide filter and belong to planar structure, it is easy to the system integration, for the integrated electricity of microwave and millimeter wave
Design and require that dimensional weight harsh application scenarios are full of attraction in road.In radar system and digital microwave communication system,
In terms of such as LMDS, MMDS, with application prospect widely.Compared to metal rectangular waveguide filter, the present invention is implemented
X-band defect ground structure-half-modular substrate integral wave guide filter that example is provided is in the design of microwave and millimeter wave Circuits and Systems
It is easily integrated.Because this X-band defect ground structure-half-modular substrate integral wave guide filter is planarized structure, it is being situated between completely
Realized on matter substrate 10, can be very by adjusting the dielectric constant of dielectric substrate 10 and the face shaping of defect ground structure and size
The size of this X-band defect ground structure-half-modular substrate integral wave guide filter is easily adjusted, so as to preferably realize
It is integrated with other microwave and millimeter wave circuits；It is simple in construction, it is easy to process.Because this structure is on half module substrate integrated wave guide
The direct etching defect ground structure formation X-band defect ground structure-half-modular substrate integral wave guide filter in surface, without overpunch
Cavity is formed, machining accuracy is high, simple and easy to apply；With higher quality factor, relatively low loss.Because this structure tool
There is the structure and characteristic similar with metal rectangular waveguide, so relative to microstrip circuit, more preferably, loss is more for its quality factor
It is low；Bandwidth is larger, has a wide range of application, and cannot be only used for all kinds of radar systems of X-band, moreover it can be used to 8GHz frequency ranges it is digital micro-
Communi-cation system.
Dielectric substrate 10 therein is using the processing of conventional microwave printed circuit board process, and preferably sheet material is
Rogers5880, dielectric constant is 2.2, and sheet metal thickness is 0.254mm, adds final size after Outside Dimensions and is：29.5×
9.00×0.33mm3.With less volume, in addition, the X-band defect ground structure-half-modular substrate integral wave guide filter is also
Gold plated Layer including being wrapped in dielectric substrate 10 and metal patch 30.So that whole X-band defect ground structure-half-module chip collection
Internal structure into waveguide filter is protected.
The present invention is not limited to above-mentioned preferred forms, and anyone can show that other are various under the enlightenment of the present invention
The product of form, however, make any change in its shape or structure, it is every that there is skill identical or similar to the present application
Art scheme, is within the scope of the present invention.
Claims (5)
1. a kind of X-band defect ground structure-half-modular substrate integral wave guide filter, it is characterised in that X-band defect ground structure-
Half-modular substrate integral wave guide filter is divided into three-decker, is from top to bottom metal patch, the metal of dielectric substrate and bottom surface
Coating, multiple through holes that the side of the dielectric substrate of the half-modular substrate integral wave guide filter is set constitute the integrated ripple of half-module chip
The side wall of waveguide filter, the plurality of through hole is in several rows of row, and through hole is plated-through hole, and the inwall of through hole is provided with copper facing
Layer, and connect metal patch and the coat of metal of bottom surface；The metal patch includes the relative input port microstrip line in position, defeated
Exit port microstrip line and respectively by micro-strip-half module substrate integrated wave guide transition metal line and input port microstrip line and defeated
The half module substrate integrated wave guide of exit port microstrip line connection, provided with many on the metal patch of half-modular substrate integral wave guide filter
Individual defect ground structure, and by the way of three-stage cascade, wherein centrally located primary defect ground structure unit is employed
Nested mode, the defect ground structure positioned at both sides is individual defect ground structure unit.
2. X-band defect ground structure-half-modular substrate integral wave guide filter according to claim 1, it is characterised in that institute
Individual defect ground structure unit is stated including two symmetrical frame-type with opening to be recessed, and the opening direction of two frame-type depressions
Relatively；The nested defect ground structure unit includes multiple nested individual defect ground structure units, and the nested defect
Construction unit is symmetrical structure.
3. X-band defect ground structure-half-modular substrate integral wave guide filter according to claim 2, it is characterised in that institute
The number for stating individual defect ground structure unit is two, and the number of the nested defect ground structure unit is one, and described embedding
Cover the centre that defect ground structure unit is located at described two individual defect ground structure units.
4. X-band defect ground structure-half-modular substrate integral wave guide filter according to claim 1, it is characterised in that institute
The sheet material for stating dielectric substrate is Rogers's sheet material, and dielectric constant is 2.2, and sheet metal thickness is 0.254mm.
5. X-band defect ground structure-half-modular substrate integral wave guide filter according to claim any one of 1-4, it is special
Levy and be, in addition to be wrapped in the Gold plated Layer of the dielectric substrate and the metal patch.
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| CN201310547844.3A CN104466316B (en) | 2013-11-08 | 2013-11-08 | A kind of X-band defect ground structure half-modular substrate integral wave guide filter |
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| CN201310547844.3A CN104466316B (en) | 2013-11-08 | 2013-11-08 | A kind of X-band defect ground structure half-modular substrate integral wave guide filter |
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| CN104466316B true CN104466316B (en) | 2017-07-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105449322B (en) * | 2015-11-30 | 2018-01-23 | 超视距成都科技有限责任公司 | Millimeter wave double-passband filter and its design method |
| CN106898848B (en) * | 2017-03-28 | 2019-01-18 | 南京邮电大学 | A kind of ultra-wide stop-band low-pass filter of H-type open circuit minor matters combination palisading type defect ground structure |
| CN107275728A (en) * | 2017-06-20 | 2017-10-20 | 成都旭思特科技有限公司 | A kind of resonance filter of DGS structures |
| CN112768852B (en) * | 2020-12-28 | 2022-02-01 | 杭州电子科技大学 | Folded substrate integrated waveguide phase shifter with CSRR loaded periodically |
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| CN1925211A (en) * | 2006-09-22 | 2007-03-07 | 东南大学 | Half-modular substrate integral wave guide filter |
| CN201570569U (en) * | 2009-03-27 | 2010-09-01 | 南京理工大学 | Mini-type defected ground structure microstrip lowpass filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4843468B2 (en) * | 2006-11-22 | 2011-12-21 | Ｎｅｃトーキン株式会社 | High surface impedance structure, antenna device, and RFID tag |
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|---|---|---|---|---|
| CN1925211A (en) * | 2006-09-22 | 2007-03-07 | 东南大学 | Half-modular substrate integral wave guide filter |
| CN201570569U (en) * | 2009-03-27 | 2010-09-01 | 南京理工大学 | Mini-type defected ground structure microstrip lowpass filter |
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| "一种新型的HMSIW宽带带通滤波器";宋秋雨 等;《现代电子技术》;20130115;第36卷(第2期);第126-128页 * |
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Inventor after: Song Mingqing Inventor before: Shao Zhenhai Inventor before: Song Mingqing |
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