CN110010494A - 一种侧壁带焊盘的***级封装互联结构制作方法 - Google Patents
一种侧壁带焊盘的***级封装互联结构制作方法 Download PDFInfo
- Publication number
- CN110010494A CN110010494A CN201811596604.1A CN201811596604A CN110010494A CN 110010494 A CN110010494 A CN 110010494A CN 201811596604 A CN201811596604 A CN 201811596604A CN 110010494 A CN110010494 A CN 110010494A
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- Prior art keywords
- metal
- side wall
- pinboard
- pad
- layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000000280 densification Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 6
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811596604.1A CN110010494B (zh) | 2018-12-26 | 2018-12-26 | 一种侧壁带焊盘的***级封装互联结构制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811596604.1A CN110010494B (zh) | 2018-12-26 | 2018-12-26 | 一种侧壁带焊盘的***级封装互联结构制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN110010494A true CN110010494A (zh) | 2019-07-12 |
CN110010494B CN110010494B (zh) | 2021-04-06 |
Family
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Family Applications (1)
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CN201811596604.1A Active CN110010494B (zh) | 2018-12-26 | 2018-12-26 | 一种侧壁带焊盘的***级封装互联结构制作方法 |
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CN (1) | CN110010494B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111952244A (zh) * | 2020-08-24 | 2020-11-17 | 浙江集迈科微电子有限公司 | 一种柔性电路板侧壁互联工艺 |
CN111968942A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 一种转接板侧壁互联射频模组的互联工艺 |
Citations (9)
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---|---|---|---|---|
CN1194460A (zh) * | 1997-03-24 | 1998-09-30 | Lg半导体株式会社 | 堆叠式半导体芯片封装及其制造方法 |
CN101465343A (zh) * | 2007-12-18 | 2009-06-24 | 财团法人工业技术研究院 | 具垂直电性自我连接的三维堆栈芯片结构及其制造方法 |
KR20090096170A (ko) * | 2008-03-07 | 2009-09-10 | 주식회사 하이닉스반도체 | 스택 패키지 |
CN101542726A (zh) * | 2008-11-19 | 2009-09-23 | 香港应用科技研究院有限公司 | 具有硅通孔和侧面焊盘的半导体芯片 |
US20090325346A1 (en) * | 2005-12-09 | 2009-12-31 | Masataka Hoshino | Semiconductor device and method of manufacturing the same |
CN104733398A (zh) * | 2015-03-31 | 2015-06-24 | 武汉新芯集成电路制造有限公司 | 一种晶圆三维集成引线工艺 |
CN106206423A (zh) * | 2016-09-08 | 2016-12-07 | 华进半导体封装先导技术研发中心有限公司 | 芯片封装侧壁植球工艺 |
CN106252241A (zh) * | 2016-09-08 | 2016-12-21 | 华进半导体封装先导技术研发中心有限公司 | 芯片封装侧壁焊盘或凸点的制作工艺 |
CN108010906A (zh) * | 2017-11-29 | 2018-05-08 | 上海先方半导体有限公司 | 一种半导体器件封装结构及封装方法 |
-
2018
- 2018-12-26 CN CN201811596604.1A patent/CN110010494B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1194460A (zh) * | 1997-03-24 | 1998-09-30 | Lg半导体株式会社 | 堆叠式半导体芯片封装及其制造方法 |
US20090325346A1 (en) * | 2005-12-09 | 2009-12-31 | Masataka Hoshino | Semiconductor device and method of manufacturing the same |
CN101465343A (zh) * | 2007-12-18 | 2009-06-24 | 财团法人工业技术研究院 | 具垂直电性自我连接的三维堆栈芯片结构及其制造方法 |
KR20090096170A (ko) * | 2008-03-07 | 2009-09-10 | 주식회사 하이닉스반도체 | 스택 패키지 |
CN101542726A (zh) * | 2008-11-19 | 2009-09-23 | 香港应用科技研究院有限公司 | 具有硅通孔和侧面焊盘的半导体芯片 |
CN104733398A (zh) * | 2015-03-31 | 2015-06-24 | 武汉新芯集成电路制造有限公司 | 一种晶圆三维集成引线工艺 |
CN106206423A (zh) * | 2016-09-08 | 2016-12-07 | 华进半导体封装先导技术研发中心有限公司 | 芯片封装侧壁植球工艺 |
CN106252241A (zh) * | 2016-09-08 | 2016-12-21 | 华进半导体封装先导技术研发中心有限公司 | 芯片封装侧壁焊盘或凸点的制作工艺 |
CN108010906A (zh) * | 2017-11-29 | 2018-05-08 | 上海先方半导体有限公司 | 一种半导体器件封装结构及封装方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111952244A (zh) * | 2020-08-24 | 2020-11-17 | 浙江集迈科微电子有限公司 | 一种柔性电路板侧壁互联工艺 |
CN111968942A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 一种转接板侧壁互联射频模组的互联工艺 |
CN111968942B (zh) * | 2020-08-24 | 2023-08-04 | 浙江集迈科微电子有限公司 | 一种转接板侧壁互联射频模组的互联工艺 |
Also Published As
Publication number | Publication date |
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CN110010494B (zh) | 2021-04-06 |
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CB03 | Change of inventor or designer information |
Inventor after: Feng Guangjian Inventor before: Feng Guangjian Inventor before: Wang Zhiyu Inventor before: Zhang Bing Inventor before: Zhou Qi Inventor before: Zhang Xun Inventor before: Yu Faxin |
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CB03 | Change of inventor or designer information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200805 Address after: 313100 Workshop No. 8, North Park, Second Division of Changxing National University Science and Technology Park, Chenwang Road and Taihu Road Intersection, Changxing County Economic and Technological Development Zone, Huzhou City, Zhejiang Province Applicant after: ZHEJIANG JIMAIKE MICROELECTRONIC Co.,Ltd. Address before: 310030 Building 6, No. 3, Xiyuan Third Road, Sandun Town, Xihu District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHENLEI MICROWAVE TECHNOLOGY Co.,Ltd. |
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