CN110010547B - 一种底部带tsv结构的硅空腔结构的制作方法 - Google Patents
一种底部带tsv结构的硅空腔结构的制作方法 Download PDFInfo
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- CN110010547B CN110010547B CN201811593478.4A CN201811593478A CN110010547B CN 110010547 B CN110010547 B CN 110010547B CN 201811593478 A CN201811593478 A CN 201811593478A CN 110010547 B CN110010547 B CN 110010547B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111099554A (zh) * | 2019-11-29 | 2020-05-05 | 杭州臻镭微波技术有限公司 | 一种微***模组中硅空腔下tsv地互联孔结构的制作方法 |
CN111682108A (zh) * | 2020-02-29 | 2020-09-18 | 浙江集迈科微电子有限公司 | 一种三维的电感制作方法 |
CN111293078B (zh) * | 2020-03-17 | 2022-05-27 | 浙江大学 | 一种转接板正反两面空腔嵌入芯片的方法 |
CN111952243B (zh) * | 2020-08-24 | 2023-04-07 | 浙江集迈科微电子有限公司 | 一种凹槽芯片嵌入工艺 |
CN115225057B (zh) * | 2022-09-19 | 2023-01-10 | 苏州汉天下电子有限公司 | 一种谐振器、制造方法及其应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101364550A (zh) * | 2007-08-08 | 2009-02-11 | 矽品精密工业股份有限公司 | 具硅通道的多芯片堆叠结构及其制法 |
CN102623427A (zh) * | 2012-03-31 | 2012-08-01 | 苏州晶方半导体科技股份有限公司 | 半导体封装结构及其封装方法 |
CN107452689A (zh) * | 2017-09-14 | 2017-12-08 | 厦门大学 | 三维***级封装应用的内嵌扇出型硅转接板及制作方法 |
CN108598062A (zh) * | 2018-05-10 | 2018-09-28 | 中国电子科技集团公司第五十八研究所 | 一种新型三维集成封装结构 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101364550A (zh) * | 2007-08-08 | 2009-02-11 | 矽品精密工业股份有限公司 | 具硅通道的多芯片堆叠结构及其制法 |
CN102623427A (zh) * | 2012-03-31 | 2012-08-01 | 苏州晶方半导体科技股份有限公司 | 半导体封装结构及其封装方法 |
CN107452689A (zh) * | 2017-09-14 | 2017-12-08 | 厦门大学 | 三维***级封装应用的内嵌扇出型硅转接板及制作方法 |
CN108598062A (zh) * | 2018-05-10 | 2018-09-28 | 中国电子科技集团公司第五十八研究所 | 一种新型三维集成封装结构 |
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